KR101731184B1 - Method for sputtering - Google Patents

Method for sputtering Download PDF

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Publication number
KR101731184B1
KR101731184B1 KR1020150152010A KR20150152010A KR101731184B1 KR 101731184 B1 KR101731184 B1 KR 101731184B1 KR 1020150152010 A KR1020150152010 A KR 1020150152010A KR 20150152010 A KR20150152010 A KR 20150152010A KR 101731184 B1 KR101731184 B1 KR 101731184B1
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South Korea
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oxygen gas
tungsten trioxide
gas
trioxide film
layer
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KR1020150152010A
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Korean (ko)
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김은규
오규진
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한양대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided is a sputtering method capable of utilizing existing equipment with high conductivity. The sputtering method includes the steps of preparing a p-type semiconductor layer and depositing a tungsten trioxide film (WO_3 layer) on the semiconductor layer through sputtering using an argon gas and an oxygen gas (O_2 gas) as a medium. In the sputter deposition step, the volume occupied by the oxygen gas from the supplied argon gas and oxygen gas is more than 0% and less than 52.8%.

Description

[0001] The present invention relates to a sputtering method,

The present invention relates to a sputtering method, and more particularly, to a method of controlling a flow rate ratio of an oxygen gas and an argon gas to be supplied during sputtering to control a gas component ratio, for example, a volume ratio in the chamber, To a sputtering method for providing a tungsten trioxide film.

Generally, sputtering is a type of vacuum deposition used in an integrated circuit production line process. Plasma is accelerated by ionized argon gas at a relatively low degree of vacuum to collide with a target, and atoms are ejected to form a wafer or a glass substrate Which means a method of making a film on the surface.

The sputtering process steps first bring the interior of the chamber close to vacuum and then low pressure Ar (argon) into the chamber. Then, when a negative voltage is applied to the cathode, an electric field is formed between the cathode (the target to be vapor-deposited) and the anode (substrate such as a wafer or a glass substrate), and the Ar gas exposed to this electric field is ionized to Ar + And a plasma is generated between the cathode and the cathode. Since the surface of the target material attached to the cathode is kept at a negative potential with respect to the substrate, Ar + (argon ion) collides with the target surface after acceleration, and the source atoms and molecules are released from the target surface and are deposited on the substrate . A thin film made by growing a substance on the substrate is called a thin film.

On the other hand, although the tungsten trioxide film is deposited through the sputtering process described above, when the tungsten trioxide film is deposited via argon gas, the thin film has poor conduction characteristics.

Publication No. KR 20100051882A (Applied Materials, Inc.)

SUMMARY OF THE INVENTION The present invention provides a sputtering method of high conductivity.

Another technical problem to be solved by the present invention is to provide a sputtering method which can utilize existing equipment as it is.

The technical problem to be solved by the present invention is not limited to the above.

Sputtering method according to one embodiment of the present invention, argon gas on the stage and the semiconductor layer to prepare the p-type semiconductor layer (Ar gas) and oxygen gas (O 2 gas) the parameters as trioxide, tungsten film (WO 3 layer Wherein the volume of the argon gas and the oxygen gas supplied by the oxygen gas may be greater than 0% but less than 52.8% by sputtering.

According to one embodiment, the volume occupied by the oxygen gas in the argon gas and the oxygen gas may be more than 0% and 5% or less.

According to one embodiment, the volume occupied by the oxygen gas in the argon gas and the oxygen gas may be 5%.

According to one embodiment, the sputtering deposition is performed at 7X10 < -3 > torr.

According to one embodiment, the thickness of the tungsten trioxide film may be 10 nm.

According to one embodiment, the method may further include forming an electrode that directly contacts the tungsten trioxide film.

According to an embodiment of the present invention, there is provided a method of manufacturing a semiconductor device comprising the steps of preparing a p-type semiconductor layer and sputtering a tungsten trioxide film (WO 3 layer) on the semiconductor layer, The volume occupied by the oxygen gas in the argon gas (Ar gas) and the oxygen gas (O 2 gas) is set to be more than 0% but less than 52.8%, thereby providing a method of manufacturing high-conductivity sputtering.

1 is a view for explaining a sputtering method according to an embodiment of the present invention.
2 is a cross-sectional view of a device for explaining a sputtering effect according to an embodiment of the present invention.
3 is a graph of conductivity characteristics of a sputtering method according to an embodiment of the present invention.
FIGS. 4 and 5 are views for explaining the principle of improving conductivity characteristics of a sputtering method according to an embodiment of the present invention.
FIG. 6 is a graph of a conductivity characteristic according to a thickness of a tungsten trioxide film according to an embodiment of the present invention.
7 is a view illustrating a light emitting device manufactured through a sputtering method according to an embodiment of the present invention.
8 is a view for explaining a solar cell manufactured through a sputtering method according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a view for explaining a sputtering method according to an embodiment of the present invention.

Referring to FIG. 1, a sputtering method according to an embodiment of the present invention includes: preparing a p-type semiconductor layer (S100); depositing an argon gas and an oxygen gas (O 2 gas) (S 110) of sputtering a WO 3 layer (S 110) and forming an electrode (S 120). Each step will be described in detail below.

A p-type semiconductor layer is prepared (S100).

The p-type semiconductor layer means a semiconductor doped with a p-type dopant. The p-type dopant includes at least one of magnesium (Mg), zinc (Zn), barium (Ba) . The p-type semiconductor layer doped with the p-type dopant may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN doped with the p-type dopant.

The p-type semiconductor layer may be formed by a liquid crystal growth method, a vapor phase growth method, a molecular beam growth method, or an organic metal chemical vapor deposition method.

To the argon gas (Ar gas) and oxygen gas (O 2 gas) on a semiconductor substrate mediated tungsten trioxide film has (WO 3 layer) can be deposited are sputtered (S110).

The tungsten trioxide film can function as an interface layer for facilitating current transfer between the p-type semiconductor layer and an electrode to be described later. At this time, the tungsten trioxide film can be sputter deposited through the argon gas and the oxygen gas.

According to one embodiment. In the tungsten trioxide film, the volume occupied by the oxygen gas in the argon gas and the oxygen gas may be more than 0% and less than 52.8%. In other words, when the volume of the argon gas and the oxygen gas is 100, the volume of the oxygen gas may be more than 0 and less than 52.8. Further, preferably, the volume occupied by the oxygen gas in the argon gas and the oxygen gas may be more than 0% and 5% or less. Further, preferably, the volume occupied by the oxygen gas in the argon gas and the oxygen gas may be 5%.

The conductivity characteristics of the tungsten trioxide film can be improved according to the volume ratio of the argon gas and the oxygen gas occupied by the oxygen gas. The principle of improving conductivity characteristics will be described later with reference to experimental results.

On the other hand, the tungsten trioxide film can be stuffered in a chamber of 7 × 10 -3 torr and room temperature.

Also, according to one embodiment, the thickness of the sputtered tungsten trioxide film may be greater than 0 nm and less than 35 nm. The thickness of the tungsten trioxide film preferably sputtered may be 10 nm. The conductivity characteristics of the tungsten trioxide layer can be improved according to the thickness of the tungsten trioxide layer. The principle of improving conductivity characteristics will be described later with reference to experimental results.

At this time, the tungsten trioxide film can be formed directly on the p-type semiconductor layer.

An electrode may be formed on the tungsten trioxide film (S120).

The electrode may be, for example, a transparent electrode. For example, when the electrode is a transparent electrode, the electrode may be formed of one selected from the group consisting of indium tin oxide (ITO), transparent conducting oxide (TCO), titanium dioxide (TiO 2 ), Ga-doped ZnO, AZO Doped ZnO, Al-doped MgO, Ga-doped MgO, F-doped SnO 2 , Nb-doped TiO 2 , ZnO, ZrO 2 , ZnO, SnO 2 , Mg- Or CuAlO 2 .

In addition, the electrode may have a multi-layer structure. For example, the electrode, CuAlO 2 / Ag / CuAlO 2 , ITO / Ag / ITO, ZnO / Ag / ZnO, ZnS / Ag / ZnS, TiO 2 / Ag / TiO 2, ITO / Au / ITO, WO 3 / Ag / WO 3 , or MoO 3 / Ag / Mo 3 .

At this time, the electrode may be formed directly on the tungsten trioxide film.

Hereinafter, with reference to FIG. 2 to FIG. 6, the effect of improving the conductivity characteristic and the principle of the sputtering method according to an embodiment of the present invention will be described in detail. 2 is a cross-sectional view of a device for explaining a sputtering effect according to an embodiment of the present invention. An element for illustrating a sputtering method according to an embodiment of the present invention shown in FIG. 2 can be manufactured according to the sputtering method described with reference to FIG.

Referring to FIG. 2, a device for explaining a sputtering method according to an embodiment of the present invention includes a p-type silicon layer 10, a tungsten trioxide layer 20 formed on the p-type silicon layer 10, And an ITO transparent electrode 30 formed on the tungsten trioxide film.

The p-type silicon layer 10 corresponds to the p-type semiconductor layer according to the step S100 described with reference to Fig. 1 and the tungsten trioxide film 20 formed on the p-type silicon layer 10 corresponds to the tri- The ITO transparent electrode 30 formed on the tungsten trioxide film corresponds to the electrode according to step S120.

The ITO transparent electrode 30 may be composed of an ITO transparent electrode 30a and an ITO transparent electrode 30b. For the performance test, the conductivity of both ends of the ITO transparent electrode 30a and the ITO transparent electrode 30b is measured Respectively.

Hereinafter, as shown in FIG. 2, a performance test result of a device manufactured according to an embodiment of the present invention will be described.

3 is a graph of conductivity characteristics of the sputtering method according to an embodiment of the present invention.

The conductivity characteristics of the device fabricated according to the sputtering method according to an embodiment of the present invention can be confirmed as shown in Table 1 and FIG.

The oxygen volume ratio (O 2 / (Ar + O 2 ) Conductivity (uA) 0 0.19 2.5 1.6 3.3 4.8 5 5.1 10 3.9 20 2.7 30 0.38 50 0.24 52.8 0.19 70 0.06

Referring to Table 1 and FIG. 3, when the oxygen gas volume in the argon gas and the oxygen gas was more than 0% and less than 52.8%, the conductivity characteristic of the contrast tungsten trioxide film was superior in the case where oxygen gas was not used in the sputtering process . Particularly, when the oxygen gas volume in the argon gas and the oxygen gas is more than 0% and 5% or less, the conductivity characteristics of the tungsten trioxide film are better than those of the oxygen gas used. Also, when the oxygen gas in the argon gas and the oxygen gas was 5%, the conductivity of the tungsten trioxide film was the most excellent.

Hereinafter, the principle by which the conductivity is improved according to the provision of oxygen at the time of forming the sputtering of the tungsten trioxide film will be described with reference to FIGS. 4 and 5. FIG.

FIGS. 4 and 5 are views for explaining the principle of improving conductivity characteristics of a sputtering method according to an embodiment of the present invention.

Referring to FIG. 4 (a), the defect level of the tungsten trioxide film was analyzed through ultraviolet photoelectron spectroscopy (UPS), and the defect level was found at 0.74 eV based on the Fermi level.

Therefore, it can be seen that the energy level of the tungsten trioxide film is formed as shown in FIG. 4 (b). That is, the defect level of the tungsten trioxide film is found to be 1.86 eV based on the conduction band.

Subsequently, the extinction coefficient according to the specific gravity occupied by oxygen gas in the argon gas and the oxygen gas during the sputtering through the ellipsometry (spectroscopic ellipsometry) was measured, and the defect level of the tungsten trioxide film was measured based on 1.86 eV.

The results of the ellipsometry were confirmed as shown in Table 2 and FIG. 5.

Oxygen volume ratio
(O 2 / (Ar + O 2 ) Imaginary part of dielectric constant
(Related to extinction coefficient) 5 0.13 50 0.19 70 0.75

Referring to Table 2 and FIG. 5, the extinction coefficient decreases until the oxygen gas in the argon gas and oxygen gas increases to 5%, and increases when the oxygen gas in the argon gas and oxygen gas exceeds 5% .

That is, since the extinction coefficient is decreased until the oxygen gas in the argon gas and the oxygen gas increases to 5%, the defect level of the tungsten trioxide film decreases. On the contrary, when the oxygen gas in the argon gas and the oxygen gas exceeds 5%, the defect level increases again.

When a tungsten trioxide film is formed between the p-type semiconductor layer and the electrode according to an embodiment of the present invention, the formation of the Schottky barrier between the p-type semiconductor layer and the electrode is suppressed to improve the conductivity, The conductivity characteristics of the tungsten trioxide film can not be improved.

However, as described above, by controlling the specific gravity occupied by the oxygen gas in the argon gas and the oxygen gas during the formation of the tungsten trioxide film sputtering, the defect level in the tungsten trioxide film can be removed, thereby improving the conductivity characteristics.

More specifically, when forming the tungsten trioxide film sputtering, the volume occupied by the oxygen gas in the argon gas and the oxygen gas is more than 0% and less than 52.8%, thereby improving the conductivity characteristics. If the volume occupied by the oxygen gas is 0%, since many defect levels are formed between the p-type semiconductor layer and the electrode, the degree of improvement in the conductivity characteristic may be insignificant. Conversely, when the volume occupied by the oxygen gas in the argon gas and the oxygen gas exceeds 52.8%, the conductivity level may deteriorate as the defect level in the tungsten trioxide film increases. Therefore, when the volume occupied by the oxygen gas in the argon gas and the oxygen gas is more than 0% but less than 52.8%, the defect level of the tungsten trioxide film is reduced, so that it can have a critical meaning within the upper and lower limits of the numerical limitation .

Further, the volume occupied by the oxygen gas in the argon gas and the oxygen gas when forming the tungsten trioxide film sputtering may be more than 0% and 5% or less. In this case, the defect level of the tungsten trioxide film is reduced according to the amount of the oxygen gas to be supplied, thereby improving the conductivity characteristic and minimizing the oxygen supply.

Further, the volume occupied by the oxygen gas in the argon gas and the oxygen gas when the tungsten trioxide film sputtering is formed may be provided at 5%. That is, when the volume occupied by the oxygen gas in the argon gas and the oxygen gas is 5%, the generation of the Schottky barrier between the p-type semiconductor layer and the electrode is suppressed and the defect level of the tungsten trioxide film is minimized to maximize the conductivity .

Hereinafter, with reference to FIG. 6, the conductivity characteristics according to the thickness of the tungsten trioxide film according to one embodiment of the present invention will be described. More specifically, FIG. 6 shows conductivity characteristics depending on the thickness of the tungsten trioxide film according to an embodiment of the present invention when the specific gravity of oxygen gas in the argon gas and the oxygen gas is 5%.

Referring to FIG. 6, the conductivity characteristics of the tungsten trioxide layer according to an embodiment of the present invention are improved from 0 nm to 10 nm, and the conductivity characteristics of the tungsten trioxide layer are degraded from 10 nm to 35 nm.

This is because if the thickness of the tungsten trioxide film is smaller than 10 nm, generation of a Schottky barrier between the p-type semiconductor layer and the electrode can not be sufficiently suppressed, and if the thickness of the tungsten trioxide film is larger than 10 nm, tunneling of the tungsten trioxide film becomes difficult do.

The method of manufacturing a tungsten trioxide film sputtering according to an embodiment of the present invention described above provides a numerical value of an oxygen gas volume ratio in an argon gas and an oxygen gas at the time of forming a sputtering to thereby produce a Schottky barrier between the p- And the defect level of the tungsten trioxide film can be minimized. Further, by providing the thickness value of the tungsten trioxide film, the conductivity characteristics can be improved.

Hereinafter, an element to which a sputtering method according to an embodiment of the present invention is applied will be described.

7 is a view illustrating a light emitting device manufactured through a sputtering method according to an embodiment of the present invention.

7, an n-type semiconductor layer 110, an active layer 115, a p-type semiconductor layer 120, a tungsten trioxide layer 130, and a first electrode 140 are formed on a substrate 100 Can be formed

The substrate 100 may be any one of a semiconductor substrate (for example, a silicon substrate, a compound semiconductor substrate), a glass substrate, or a metal substrate. Alternatively, the substrate 100 may be formed of any one of GaN, SiC, Si, ZnO, GaAs, InP, Ge, Ga2O3, ZrB2 or GaP. According to one embodiment, the substrate 100 may be flexible.

An undoped semiconductor layer 105 may be formed on the substrate 100. The undoped semiconductor layer 105 may be formed of a gallium nitride layer (undoped-GaN, U-GaN).

The n-type semiconductor layer 110 is a semiconductor doped with an n-type dopant. The n-type dopant may be one selected from the group consisting of silicon (Si), germanium (Ge), tin (Sn), tellurium (Te) And the n-type semiconductor layer 110 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN doped with the N-type dopant.

The active layer 115 may have a multi-quantum well (MQW) structure, a single quantum well structure (SQW), or a quantum dot structure.

The p-type semiconductor layer 120, the tungsten trioxide layer 130, and the first electrode 140 correspond to the p-type semiconductor layer, the tungsten trioxide layer, and the electrode described above with reference to Figs. 1 and 2, respectively .

That is, the tungsten trioxide layer 130 may be formed by a sputtering method according to an embodiment of the present invention, thereby improving conductivity between the p-type semiconductor layer 120 and the first electrode 140 .

The second electrode 150 may be formed on the n-type semiconductor layer 110 and may form an electric field together with the first electrode 140.

By applying the tungsten trioxide film to the light emitting device, for example, the LED through the sputtering method according to an embodiment of the present invention, the light emitting efficiency can be improved.

8 is a view for explaining a solar cell manufactured through a sputtering method according to an embodiment of the present invention.

Referring to FIG. 8, a tungsten trioxide layer 210, a p-n junction layer 220, and a second electrode 230 may be formed on the first electrode 200.

The first electrode 200 and the tungsten trioxide layer 210 may correspond to the electrode and the tungsten trioxide layer described with reference to FIGS. 1 and 2, respectively.

The p-n junction layer 220 functions as a photoelectric conversion layer and may be formed by implanting an n-type material into a p-type semiconductor substrate.

The tungsten trioxide layer 210 may be in contact with the p-type doped layer of the p-n junction layer.

The tungsten trioxide layer 210 may be formed by a sputtering method according to an embodiment of the present invention to improve the conductivity between the p-n junction layer 220 and the first electrode 200.

Therefore, the photoelectric conversion efficiency can be improved by applying the tungsten trioxide film to the solar cell through the sputtering method according to an embodiment of the present invention.

7 and 8, a sputtering method according to an embodiment of the present invention can be applied to a light emitting device and a solar cell, and a sputtering method according to an embodiment of the present invention includes a p-type semiconductor layer, The present invention is also applicable to other devices in which a tungsten trioxide film is formed between the electrodes.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

10: p-type semiconductor layer 20: tungsten trioxide film
30: Electrode

Claims (6)

preparing a p-type semiconductor layer;
Sputtering a tungsten trioxide film (WO3 layer) through an argon gas and an oxygen gas (O2 gas) to directly contact the semiconductor layer, and
Forming a transparent electrode in direct contact with the sputtered tungsten trioxide film,
The volume occupied by the oxygen gas in the argon gas and the oxygen gas to be supplied has a volume ratio of more than 0% but less than 52.8%
The volume ratio reduces the defect level in the sputtered tungsten trioxide film and improves the conductivity of the argon gas and the oxygen gas compared to when the volume occupied by the oxygen gas is 0%
Wherein the sputter deposited tungsten trioxide film has a thickness of 10 to 20 nm. The method according to claim 1,
Wherein a volume occupied by the oxygen gas in the argon gas and the oxygen gas is more than 0% and 5% or less. The method according to claim 1,
Wherein a volume occupied by the oxygen gas in the argon gas and the oxygen gas is 5%. The method according to claim 1,
Wherein the sputter deposition is performed at 7X10 < -3 > torr. The method according to claim 1,
Wherein the thickness of the tungsten trioxide film is 10 nm. delete
KR1020150152010A 2015-10-30 2015-10-30 Method for sputtering KR101731184B1 (en)

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Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Dong Soo Choi 외 6인, "Electrochromic characterization of amorphous tungsten oxide films deposited on indium tin oxide and CVD-graphene electrodes by RF magnetron sputtering" (2011)
강동수 외 3인, "RF 마그네트론 스퍼터링을 이용한 WO3/Ag/WO3 투명전극의 전기·광학적 특성 연구", 전기학회논문지 63권 11호, pp.1533～1537, (2014.11.)

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