CN101000940A - Semiconductor luminous element and manufacturing method thereof - Google Patents
Semiconductor luminous element and manufacturing method thereof Download PDFInfo
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- CN101000940A CN101000940A CNA2006100036297A CN200610003629A CN101000940A CN 101000940 A CN101000940 A CN 101000940A CN A2006100036297 A CNA2006100036297 A CN A2006100036297A CN 200610003629 A CN200610003629 A CN 200610003629A CN 101000940 A CN101000940 A CN 101000940A
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Abstract
The invention relates to a luminescent component of semiconductor, which includes an active layer, a first barrier layer and a second barrier layer, and the active layer includes a well layer, and the well layer dopes the impurities. The well layer locates between the first barrier layer and the second barrier layer, and the first barrier layer has a area doped impurities which adjacent to the well layer and a non-impurities area which is away from the well layer, and the second barrier layer has the second non-impurities area which adjacent to the well layer.
Description
Technical field
The present invention relates to a kind of light-emitting component and manufacture method thereof, particularly relate to a kind of semiconductor light-emitting elements and manufacture method thereof.
Background technology
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, data memory device, communication device, lighting device and medical treatment device.One of the important topic that present technical staff is faced brightness for how improving light-emitting diode.
In traditional nitride semiconductor luminescent element, normally with a multiple quantum trap (multiple quantum well who is doped with n type impurity, MQW) structure is as active layer (active layer), the mode of its doping impurity roughly is divided into three kinds: a kind of is even Doped n-type impurity in barrier layer, involuntary impurity in the quantum well layer; Second kind is even Doped n-type impurity in quantum well layer, involuntary impurity in the barrier layer; The third is an all even Doped n-type impurity in barrier layer and quantum well.Yet the light-emitting component so that above-mentioned doping impurity mode obtains all still is apparent not enough on luminosity.Therefore, be to promote the luminosity of laser diode, a prior art is in the quantum well layer zone of contiguous barrier layer, local impurity, and in the also local impurity in this barrier layer zone of contiguous this quantum well layer, to promote the luminosity of laser diode.
Summary of the invention
The invention provides a kind of semiconductor light-emitting elements comprises: an active layer, this active layer comprise a trap layer, the unintentional impurity of this trap layer, one first barrier layer and one second barrier layer.Wherein this trap layer is formed between this first barrier layer and this second barrier layer, this first barrier layer is adjacent to this trap layer place and has one first intentional Doped n-type impurity range, this first barrier layer is away from this trap floor place and has one first intentional impurity district, and this second barrier layer is adjacent to this trap floor place and has one second intentional impurity district.Semiconductor light-emitting elements of the present invention has the advantage of high luminosity, has more low operating voltage, can improve the electrical of conventional luminescent device.
The invention provides a kind of manufacture method of semiconductor light-emitting elements, comprise: formation one is the trap layer of intentional impurity not, this trap layer comprises a first surface and a second surface that lays respectively at its two opposite side, form one first barrier layer, comprise: be adjacent to the intentional Doped n-type impurity of this first surface in this first barrier layer, to form one first intentional Doped n-type impurity range, and in this barrier layer not with the adjacent regional involuntary impurity of this trap floor to form one first intentional impurity district, and form one second barrier layer, comprising: be adjacent to this second surface and form one second unintentional impurity district.
Description of drawings
Fig. 1 is a schematic diagram, shows a kind of semiconductor light-emitting elements according to one embodiment of the present invention;
Fig. 2 a is a schematic diagram, shows the structure of active layer in the preferred embodiment of the present invention;
Fig. 2 b is a schematic diagram, shows the structure of active layer in the preferred embodiment of the present invention;
Fig. 3 is the curve chart of luminous intensity to electric current;
Fig. 4 is the curve chart of electric current to voltage;
Fig. 5 is a schematic diagram, shows the structure of active layer in the preferred embodiment of the present invention.
The simple symbol explanation
10 substrates
11 resilient coatings
12 n type semiconductor layer
13 active layers
131 trap layers
132 barrier layers
132a has intentional Doped n-type impurity range
The unintentional impurity district of 132b
14 p type semiconductor layer
16 first electrodes
17 second electrodes
Embodiment
See also Fig. 1 and Fig. 2, a kind of semiconductor light-emitting elements 1 according to one embodiment of the present invention, comprise a substrate 10, be formed at a resilient coating 11 on the substrate 10, be formed at the n type semiconductor layer 12 on the resilient coating 11, wherein n type semiconductor layer 12 comprises a first surface and a second surface, is formed at a active layer 13 on this first surface, is formed at a p type semiconductor layer 14 on this active layer 13, is formed at one first electrode 16 on this p type semiconductor layer 14 and is formed at one second electrode 17 on this second surface.Wherein this active layer 13 is a multiple quantum trap structure, comprise a plurality of trap layers 131, and be interspersed in a plurality of barrier layers 132 between the trap layer 131, this trap layer 131 by one not deliberately internal (intrinsic) semiconductor of impurity constituted, its impurity concentration is less than or equal to 1 * 10 approximately
17Cm
-3This trap layer 131 has an a lower surface and a upper surface, the barrier layer 132 that joins with trap layer 131 lower surface comprises two zones, being one to have intentional Doped n-type impurity range 132a near the zone of trap layer 131 lower surface, is an intentional impurity district 132b away from the zone of trap floor 131 lower surface.Shown in Fig. 2 a, the barrier layer 132 that joins with trap layer 131 upper surface is intentional impurity.Yet for making light-emitting component 1 obtain preferred brightness, shown in Fig. 2 b, the barrier layer 132 that joins with trap floor 131 upper surface also can comprise two zones: being an intentional impurity district 132b near the zone of trap floor 131 upper surface, is one to have intentional Doped n-type impurity range 132a away from the zone of trap layer 131 upper surface.
Semiconductor light-emitting elements 1 manufacture method of the preferred embodiment of the present invention, comprise select a substrate 10, in form a resilient coating 11 on the substrate 10, in forming a n type semiconductor layer 12 on the resilient coating 11, on this n type semiconductor layer 12, forming an active layer 13, this active layer 13 is a multiple quantum trap structure, by a plurality of trap layers 131 and be interspersed in staggered forming of a plurality of barrier layers 132 between the trap layer 131.Its manufacturing step is included on this n type semiconductor layer 12 and forms an active layer, and the manufacturing step of this active layer is included in and forms the intentional barrier layer of impurity district 132b not on this n type semiconductor layer 12, go up the barrier layer that formation one has intentional Doped n-type impurity range 132a in this intentional impurity district 132b, go up the not trap layer 131 of intentional impurity of formation one in this intentional Doped n-type impurity range 132a, on this trap floor 131, form the intentional barrier layer of impurity district 132b not, go up the barrier layer that formation one has intentional Doped n-type impurity range 132a in this intentional impurity district 132b.On active layer 13, form a p type semiconductor layer 14, utilize engraving method the p type semiconductor layer 14 and the active layer 13 of etching part in regular turn, expose the part surface of n type semiconductor layer 12, in forming one first electrode 16 on the p type semiconductor layer 14 and on the exposed surface of n type semiconductor layer 12, forming one second electrode 17.
Please refer to Fig. 3, element A that discloses for semiconductor light-emitting elements of the present invention 1 and aforementioned prior art and the luminous intensity of element B change the electrical comparison diagram of (L-I curve) with electric current, the trap layer of element A intentional impurity wherein, barrier layer be whole Doped n-type impurity then; The trap layer of element B and barrier layer are all distinguished local Doped n-type impurity in the zone of contiguous its handing-over interface.As shown in Figure 3, under the identical condition of input current, the luminous intensity of semiconductor light-emitting elements 1 is higher than light-emitting component A and light-emitting component B.Fig. 4 is presented under the identical condition of input current, and the operating voltage of semiconductor light-emitting elements 1 is lower than light-emitting component A and light-emitting component B, and provable have preferably electrically according to semiconductor light-emitting elements of the present invention.
(metal organic chemicalvapor deposition, MOCVD) grow up on this substrate by method with metal organic chemical vapor deposition for the generation type of aforementioned each layer.
If with molecular beam epitaxy (molecular beam epitaxy, MBE) method forms semiconductor light-emitting elements 1, see also Fig. 5, in the multiple quantum trap structure of active layer 13, the barrier layer 132 that joins with trap floor 131 lower surface can be unintentional impurity district, yet for making light-emitting component 1 obtain preferred brightness, the barrier layer 132 that joins with trap floor 131 lower surface can comprise two zones: being an intentional impurity district 132b near the zone of trap floor 131 lower surface, is one to have intentional Doped n-type impurity range 132a away from the zone of trap layer 131 lower surface.The barrier layer 132 that joins with trap layer 131 upper surface comprises two zones, is one to have intentional Doped n-type impurity range 132a near the zone of trap layer 131 upper surface, is an intentional impurity district 132b away from the zone of trap floor 131 upper surface.
Deliberately the thickness B 1 of the barrier layer 132a of Doped n-type impurity and not deliberately the ratio regular meeting that accounts for barrier layer 132 gross thickness B respectively of the thickness B 2 of the barrier layer 132b of impurity influence the brightness of light-emitting component.When the ratio (0＜B1/B＜1) between 0 and 1 of B 1 and B, the ratio of B2 and B is (0＜B2/B＜1) between 0 and 1, and the brightness of light-emitting component can thereby promote.In the present embodiment, B1/B is not more than 3/4, and the ratio of B2/B is greater than 1/4, and the brightness of light-emitting component has significant lifting.The intentional impurity district 132a of each barrier layer accounts for the ratio of barrier layer 132 thickness can identical or inequality, and the intentional impurity district 132a of each barrier layer accounts for the ratio of barrier layer 132 thickness also can identical or inequality.
Between the aforesaid p type semiconductor layer 14 and first electrode 16, one first transparency conducting layer can be formed, between the second surface of n type semiconductor layer 12 and second electrode 17, one second transparency conducting layer can be formed.The material of this first transparency conducting layer and second transparency conducting layer can be metal, tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum or zinc-tin oxide.With the tin indium oxide is example, and its thickness is for example between 50nm to 1um, and has the penetrance more than 50% between wave-length coverage 300～700nm.Transparency conducting layer can be made by electron beam evaporation plating method (E-beam evaporation), ion sputtering method (Ion-sputtering), hot vapour deposition method (Thermal evaporation) or in conjunction with two or more modes.
In the above-described embodiments, substrate 10 also can comprise be selected from ZnO, MgO, and glass institute constituent material cohort at least a material or other alternative material.Substrate 10 can also be replaced it by electrically-conductive backing plate, and this moment, second electrode can be formed at the lower surface of electrically-conductive backing plate, and etching step can omit.Electrically-conductive backing plate comprises that at least a material or other alternative material that are selected from SiC, GaN, AlN and the Si institute constituent material cohort replace it.
N type semiconductor layer 12 in the foregoing description can comprise and is selected from AlGaAs, AlGaInP, a kind of material or its alternative material in AlInP and the constituent material group of InGaP institute, barrier layer 132 can comprise and is selected from AlGaAs, AlInGaP, a kind of material or its alternative material in InGaP and the constituent material group of AlInP institute, trap layer 131 can comprise and is selected from AlGaAs, AlInGaP, a kind of material or its alternative material in InGaP and the constituent material group of AlInP institute, p type semiconductor layer 14 can comprise and is selected from AlGaAs, AlGaInP, a kind of material or its alternative material in AlInP and the constituent material group of InGaP institute, electrically-conductive backing plate comprise that then at least a material or other alternative material that are selected from GaAs and the GaP institute constituent material cohort replace it.
Though the present invention each embodiment of mat is illustrated in, so these embodiment are not in order to limit the scope of the invention.For various modifications and the change that the present invention did, neither spirit of the present invention and the scope of taking off.
Claims (30)
1. semiconductor light-emitting elements comprises:
Substrate; And
Active layer is formed on this substrate, comprising:
The trap layer, unintentional impurity;
First barrier layer; And
Second barrier layer, wherein this trap layer is formed between this first barrier layer and this second barrier layer, this first barrier layer has the intentional Doped n-type impurity range of contiguous this trap layer, and have the intentional impurity district away from this trap floor, this second barrier layer has the intentional impurity district of contiguous this trap floor.
2. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein this second barrier layer has the intentional Doped n-type impurity range away from this trap layer.
3. a kind of semiconductor light-emitting elements as claimed in claim 1, has the 3rd barrier layer, be positioned at the same side of this trap layer with this barrier layer, and than this first barrier layer away from this trap layer, the 3rd barrier layer has the intentional Doped n-type impurity range of contiguous this first barrier layer, and has the unintentional impurity district away from this first barrier layer.
4. a kind of semiconductor light-emitting elements as claimed in claim 1, has the 4th barrier layer, be positioned at the same side of this trap layer with this second barrier layer, and than this second barrier layer away from this trap layer, the 4th barrier layer has the unintentional impurity district of contiguous this second barrier layer, and has the intentional Doped n-type impurity range away from this second barrier layer.
5. a kind of semiconductor light-emitting elements as claimed in claim 1 also comprises:
The n type semiconductor layer, this n type semiconductor layer is formed between this substrate and this active layer, and has first surface and second surface;
The p type semiconductor layer, this p type semiconductor layer is formed on this active layer;
First electrode, this first electrode are formed on this p type semiconductor layer; And
Second electrode, this second electrode is formed on this n type semiconductor layer.
6. a kind of semiconductor light-emitting elements as claimed in claim 5 wherein also comprises the resilient coating that is formed at this substrate and n N-type semiconductor N interlayer.
7. a kind of semiconductor light-emitting elements as claimed in claim 5 wherein also comprises being formed at this p type semiconductor layer and first interelectrode first transparency conducting layer.
8. a kind of semiconductor light-emitting elements as claimed in claim 7 wherein also comprises being formed at this n type semiconductor layer and second interelectrode second transparency conducting layer.
9. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein the thickness of the intentional Doped n-type impurity range of this first barrier layer is B1, and the thickness of first barrier layer is B, and the ratio of B1/B is not more than 3/4.
10. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, the not thickness in intentional impurity district of this second barrier layer is B2, and the thickness of second barrier layer is B, and the ratio of B2/B is greater than 1/4.
11. a kind of semiconductor light-emitting elements as claimed in claim 2, wherein, the thickness of the intentional Doped n-type impurity range of this second barrier layer is B1, and the thickness of second barrier layer is B, and the ratio of B1/B is not more than 3/4.
12. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, this substrate comprise be selected from SiC, GaAs, GaN, AlN, GaP, Si, ZnO, MgO, and glass institute constituent material cohort at least a material or other alternative material.
13. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, this trap layer comprises and is selected from Al
aIn
bGa
(1-a-b)N, wherein a kind of material or its alternative material in 0≤a≤1,0≤b≤1,0≤a+b≤1, AlGaAs, AlInGaP, InGaP and the constituent material group of AlInP institute.
14. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, this first barrier layer comprises and is selected from Al
xIn
yGa
(1-x-y)N, wherein a kind of material or its alternative material in 0≤x≤1,0≤y≤1,0≤x+y≤1, AlGaAs, AlInGaP, InGaP and the constituent material group of AlInP institute.
15. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, this second barrier layer comprises and is selected from Al
xIn
yGa
(1-x-y)N, wherein a kind of material or its alternative material in 0≤x≤1,0≤y≤1,0≤x+y≤1, AlGaAs, AlInGaP, InGaP and the constituent material group of AlInP institute.
16. a kind of semiconductor light-emitting elements as claimed in claim 5, wherein, this n type semiconductor layer comprises and is selected from Al
cIn
dGa
(1-c-d)N, wherein a kind of material or its alternative material in 0≤c≤1,0≤d≤1,0≤c+d≤1, AlGaAs, AlGaInP, AlInP and the constituent material group of InGaP institute.
17. a kind of semiconductor light-emitting elements as claimed in claim 5, wherein, this p type semiconductor layer can comprise and is selected from Al
eIn
fGa
(1-e-f)N, wherein a kind of material or its alternative material in 0≤e≤1,0≤f≤1,0≤e+f≤1, AlGaAs, AlGaInP, AlInP and the constituent material group of InGaP institute.
18. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, this n type impurity comprises a kind of material that is selected from Si, Ge, Sn, Te, O, S and the constituent material group of C institute.
19. a kind of semiconductor light-emitting elements as claimed in claim 1, wherein, the doping content of this n type impurity is between 1 * 10
17Cm
-3～1 * 10
20Cm
-3Between.
20. a kind of semiconductor light-emitting elements as claimed in claim 7, wherein, this first transparency conducting layer comprises at least a material or other alternative material that is selected from metal, tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum and the zinc-tin oxide institute constituent material cohort.
21. a kind of semiconductor light-emitting elements as claimed in claim 8, wherein, this second transparency conducting layer comprises at least a material or other alternative material that is selected from metal, tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum and the zinc-tin oxide institute constituent material cohort.
22. a kind of semiconductor light-emitting elements as claimed in claim 2, wherein, this n type impurity comprises a kind of material that is selected from Si, Ge, Sn, Te, O, S and the constituent material group of C institute.
23. a kind of semiconductor light-emitting elements as claimed in claim 2, wherein, the 3rd barrier layer comprises and is selected from Al
xIn
yGa
(1-x-y)N, wherein a kind of material or its alternative material in 0≤x≤1,0≤y≤1,0≤x+y≤1, AlGaAs, AlInGaP, InGaP and the constituent material group of AlInP institute.
24. a kind of semiconductor light-emitting elements as claimed in claim 23, wherein, this n type impurity comprises a kind of material that is selected from Si, Ge, Sn, Te, O, S and the constituent material group of C institute.
25. the manufacture method of a semiconductor light-emitting elements, step comprises:
Form the not trap layer of intentional impurity, this trap layer comprises first surface and the second surface that lays respectively at its two opposite side;
Form first barrier layer, step comprises: be adjacent to this first surface and form the first intentional Doped n-type impurity range; And away from the intentional impurity district of this first surface formation; And
Form second barrier layer, step comprises: be adjacent to this second surface and form not deliberately impurity district.
26. the manufacture method of a kind of semiconductor light-emitting elements as claimed in claim 25 wherein also is included in away from this second surface and forms intentional Doped n-type impurity range.
27. the manufacture method of a kind of semiconductor light-emitting elements as claimed in claim 25, wherein this manufacture method is a Metalorganic Chemical Vapor Deposition.
28. the manufacture method of a kind of semiconductor light-emitting elements as claimed in claim 25, wherein this manufacture method is a molecular beam epitaxy.
29. a semiconductor light-emitting elements comprises active layer, this active layer comprises the semiconductor multiple quantum trap structure, comprising:
Trap layer, wherein impurity not;
First barrier layer; And
Second barrier layer,
Wherein this trap layer is formed between this first barrier layer and this second barrier layer, and this first barrier layer has the Doped n-type impurity range of contiguous this trap layer, and has the not impurity district away from this trap floor.
30. a kind of semiconductor light-emitting elements as claimed in claim 30, wherein this second barrier layer has the not impurity district of contiguous this trap floor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100036297A CN101000940A (en) | 2006-01-09 | 2006-01-09 | Semiconductor luminous element and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100036297A CN101000940A (en) | 2006-01-09 | 2006-01-09 | Semiconductor luminous element and manufacturing method thereof |
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|---|---|
| CN101000940A true CN101000940A (en) | 2007-07-18 |
Family
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|---|---|---|---|
| CNA2006100036297A Pending CN101000940A (en) | 2006-01-09 | 2006-01-09 | Semiconductor luminous element and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
| CN102598318A (en) * | 2009-09-15 | 2012-07-18 | 昭和电工株式会社 | Light emitting diode, light emitting diode lamp and lighting device |
| CN101771120B (en) * | 2008-12-31 | 2012-07-25 | 晶元光电股份有限公司 | Semiconductor light-emitting device |
| CN110416374A (en) * | 2019-08-08 | 2019-11-05 | 厦门乾照半导体科技有限公司 | LED epitaxial slice and its growing method, light emitting diode, display device |
-
2006
- 2006-01-09 CN CNA2006100036297A patent/CN101000940A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101771120B (en) * | 2008-12-31 | 2012-07-25 | 晶元光电股份有限公司 | Semiconductor light-emitting device |
| CN102598318A (en) * | 2009-09-15 | 2012-07-18 | 昭和电工株式会社 | Light emitting diode, light emitting diode lamp and lighting device |
| US9112084B2 (en) | 2009-09-15 | 2015-08-18 | Showa Denko K.K. | Light emitting diode, light emitting diode lamp, and illuminating apparatus |
| CN102280547A (en) * | 2011-08-31 | 2011-12-14 | 厦门大学 | GaN semiconductor luminotron with P-type active region |
| CN110416374A (en) * | 2019-08-08 | 2019-11-05 | 厦门乾照半导体科技有限公司 | LED epitaxial slice and its growing method, light emitting diode, display device |
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Open date: 20070718 |