KR101726042B1 - Thin film comprising Indium Tin Oxide(ITO), method of fabricating the same, and transistor comprising the same - Google Patents

Thin film comprising Indium Tin Oxide(ITO), method of fabricating the same, and transistor comprising the same Download PDF

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KR101726042B1
KR101726042B1 KR1020150058294A KR20150058294A KR101726042B1 KR 101726042 B1 KR101726042 B1 KR 101726042B1 KR 1020150058294 A KR1020150058294 A KR 1020150058294A KR 20150058294 A KR20150058294 A KR 20150058294A KR 101726042 B1 KR101726042 B1 KR 101726042B1
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thin film
indium
tin
oxygen
intensity
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KR1020150058294A
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Korean (ko)
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KR20160127292A (en
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박진성
전혜지
정현준
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한양대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L2251/308—

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  • Power Engineering (AREA)
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  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method for producing a thin film is provided. Comprising the steps of: preparing a substrate; forming a thin film containing an oxide of indium (In) and tin (Sn) on the substrate; and performing heat treatment while performing UV irradiation and ozone (O 3 ) And performing a post-treatment process on the thin film to increase the mobility of the thin film.

Description

A thin film comprising indium and tin oxides, a method of manufacturing the same, and a transistor including the thin film made of indium tin oxide (ITO)

The invention proceeds to be related to the transistor including a thin film, a production method including an oxide of indium and tin, and this, and more particularly, UV irradiation, ozone (O 3) treatment, and the heat treatment on the substrate at the same time A thin film including an oxide of indium and tin with improved semiconductor performance, a method of manufacturing the same, and a transistor including the same.

BACKGROUND ART [0002] As semiconductor device technologies such as semiconductor memory devices, light emitting diodes, system semiconductor devices, power semiconductor devices, and super capacitors have been developed, thin film production methods having excellent characteristics have been researched to improve device reliability and lifetime.

Particularly, as the size of a semiconductor device decreases, studies on a method for manufacturing a very precise and thin film have been progressing. In order to broaden the selection of a semiconductor device substrate, .

For example, in International Publication No. WO2011 / 149118A1 (Applicant: Yonsei Univ., International Application No. PCT / KR2010 / 003263), a compound sol containing indium and / or tin oxide is deposited on a substrate, There is disclosed a thin film manufacturing technique which repeatedly performs a first heat treatment at 450 캜 and a second heat treatment at 600 캜 to 800 캜 to improve the stable bonding force between the substrate and the oxide compound sol and the crystallization of the oxide semiconductor thin film.

Recently, display devices having a high resolution have attracted attention. In the case of a high-resolution display device, the charging time of the storage capacitance capacitor per gate line is short and the channel resistance due to the line width reduction can be increased. Accordingly, in order to realize a high-resolution display device, it is increasingly necessary to develop a thin film transistor having a channel having a high mobility.

Accordingly, various research and development are underway to manufacture oxide thin films having high mobility characteristics in a simple process.

International Publication No. WO2011 / 149118A1

The present invention provides a thin film including indium and tin oxides having improved electrical characteristics, a method for manufacturing the thin film, and a transistor including the same.

It is another object of the present invention to provide a thin film containing indium and tin oxides with improved mobility, a method of manufacturing the same, and a transistor including the same.

 Another aspect of the present invention is to provide a thin film containing indium and tin oxides which can be subjected to a low temperature process, a method of manufacturing the same, and a transistor including the same.

Another aspect of the present invention is to provide a thin film containing indium and tin oxides having a simplified manufacturing process, a method of manufacturing the same, and a transistor including the same.

It is another object of the present invention to provide a thin film containing indium and tin oxides with reduced manufacturing costs, a method of manufacturing the same, and a transistor including the same.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above-described technical problem, the present invention provides a method for manufacturing a thin film.

According to one embodiment, there is provided a method of manufacturing a semiconductor device, comprising: preparing a substrate; forming a thin film containing indium (In) and tin (Sn) oxides on the substrate; And performing a post-treatment process including a UV irradiation and an ozone (O 3 ) treatment and a heat treatment, on the thin film, thereby increasing the mobility of the thin film.

According to an embodiment, the oxide of indium (In) and tin (Sn) may include a thin film including indium-tin-gallium-oxide (ITGO).

According to one embodiment, oxygen (O 2 ) gas is supplied onto the thin film containing the oxide of indium (In) and tin (Sn), and the oxygen (O 2 ) O 3 ), and the thin film may be treated with ozone (O 3 ).

According to one embodiment, the post-treatment process may comprise performing at a temperature of 150 ° C or less.

According to one embodiment, the chemical treatment between indium (In) and oxygen (O) in the thin film containing the oxide of indium (In) and tin (Sn) is reduced by the post- (Sn) and oxygen (O) is increased.

According to one embodiment, when the intensity of light emitted by the thin film containing indium (In) and tin (Sn) is measured by X-ray absorption, the time of the post-treatment of the thin film is increased Accordingly, the emission intensity of a peak corresponding to the bond between indium (In) and oxygen (O) is decreased.

According to one embodiment, when the intensity of light emitted by the thin film containing indium (In) and tin (Sn) is measured by X-ray absorption, the time of the post-treatment of the thin film is increased The intensity of the peak corresponding to the bond between tin (Sn) and oxygen (O) is increased.

According to one embodiment, when the intensity of light emitted by the X-ray absorption of the thin film containing the indium (In) and tin (Sn) oxides is measured, the increase in the post- The width at which the intensity of intensity of the peak corresponding to the bond between indium (In) and oxygen (O) is decreased decreases along with the intensity of the peak corresponding to the bond between tin (Sn) and oxygen (O) ) Is greater than the increasing width.

According to one embodiment, when the intensity of light emitted by the thin film containing indium (In) and tin (Sn) is measured by X-ray absorption, the time of the post-treatment of the thin film is increased (FWHM, Full Width at Half Maximum) corresponding to the bond between indium (In) and oxygen (O).

According to one embodiment, when the intensity of light emitted by the thin film containing indium (In) and tin (Sn) is measured by X-ray absorption, the time of the post-treatment of the thin film is increased (FWHM, Full Width at Half Maximum) corresponding to the bond between tin (Sn) and oxygen (O).

According to one embodiment, the post-treatment of the thin film comprising an oxide of indium (In) and tin (Sn) is performed for at least 10 minutes.

In order to solve the above technical problem, the present invention provides a thin film.

According to one embodiment, the emission intensity of the indium (In) and tin (Sn) is measured and the emission intensity of the peak corresponding to the bond between indium (In) and oxygen And the intensity includes an intensity lower than an intensity of a peak corresponding to a bond between tin (Sn) and oxygen (O).

According to an aspect of the present invention, there is provided a transistor.

According to one embodiment, the thin film according to the present invention; A gate electrode on the thin film; And a transistor including a gate insulating film between the gate electrode and the thin film.

According to an embodiment of the present invention, a post-treatment process including UV irradiation and ozone (O 3 ) treatment and heat treatment is performed on a thin film containing an oxide of indium (In) and tin (Sn) The electrical characteristics of the thin film can be improved in a relatively low temperature process. In other words, the thin film containing an oxide of indium (In) and tin (Sn) can be simultaneously subjected to UV irradiation, ozone (O 3 ) treatment, and heat treatment to treat the thin film at a relatively low temperature, Accordingly, the electronic structure of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) constituting the thin film is changed at a relatively low temperature, and the mobility of the thin film can be improved. Accordingly, it is possible to provide a thin film manufacturing method that can be applied to a flexible substrate, can simplify the process, can manufacture a high mobility device, and can have a large area.

1 is a flowchart illustrating a method of manufacturing a thin film using a thin film manufacturing apparatus according to an embodiment of the present invention.
2 is a view for explaining a thin film production apparatus according to an embodiment of the present invention.
3 is a view for explaining a first embodiment of a transistor including a thin film according to an embodiment of the present invention.
4 is a view for explaining a second embodiment of a transistor including a thin film according to an embodiment of the present invention.
5 is a view for explaining a third embodiment of a transistor including a thin film according to an embodiment of the present invention.
FIG. 6 is an XAS graph of a thin film for explaining light emission intensities according to X-ray absorption of a thin film according to an embodiment of the present invention.
FIG. 7 is a graph showing an intensity of light according to X-ray absorption of a thin film according to an embodiment of the present invention. FIG. 7 is a graph showing the relationship between an In-O peak and a tin-O peak, FIG. 6 is a graph enlarging a part of FIG.
8 is a graph showing the intensity of light according to the X-ray absorption of the thin film according to the embodiment of the present invention. In order to explain the change of the edge portion of the indium-oxide (In-O) peak, Of the present invention.
9 is a graph for explaining electrical characteristics of a transistor including a thin film according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

1 is a flow chart for explaining a method of manufacturing a thin film according to an embodiment of the present invention.

Referring to FIG. 1, a substrate is prepared in a chamber (S100). For example, the substrate may be any one of a silicon semiconductor substrate, a compound semiconductor substrate, a metal substrate, a glass substrate, and a plastics substrate.

An inert gas is provided inside the chamber so that the interior of the chamber can be purged. For example, the inert gas may be nitrogen gas, argon gas, and helium gas.

As described above, since the inside of the chamber is purged by the inert gas, it is possible to remove particles existing in the chamber which can cause surface contamination of the thin film. Therefore, the surface roughness characteristics of the thin film to be manufactured can be improved

A thin film containing indium (In) and tin (Sn) oxides may be formed on the substrate in the chamber (S200). For example, the thin film containing the oxide of indium (In) and tin (Sn) may be formed on the substrate by a method such as sputtering, CVD (Chemical Vapor Deposition) have.

The thin film containing the oxide of indium (In) and tin (Sn) may be a thin film including indium-tin-gallium-oxide (ITGO). For example, when a thin film including ITGO (Indium-Tin-Gallium-Oxide) is deposited on the substrate using a sputtering method, the ITGO (Indium-Tin-Gallium-Oxide) Indium (In), tin (Sn), and gallium (Ga) become a sputtering target material and can be prepared in the form of a mixture. For example, the composition ratio of the indium (In), tin (Sn), and gallium (Ga) mixture may be 7: 1: 2.

A post-treatment process including performing UV irradiation and ozone (O3) treatment and heat treatment on the thin film containing the oxide of indium (In) and tin (Sn) is performed to increase the mobility of the thin film (S300).

As described above, when the thin film containing the oxide of indium (In) and tin (Sn) is subjected to the post-treatment process, indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) Can be changed. In other words, the chemical bonding between indium (In) and oxygen (O) in the thin film can be reduced and the chemical bonding between tin (Sn) and oxygen (O) can be increased by the post-treatment process. Accordingly, the mobility of the thin film containing the indium (In) and tin (Sn) oxides can be improved.

Further, as the post-treatment process time for the thin film is increased, the mobility of the thin film can be increased. For example, when the post-treatment process including UV irradiation, ozone treatment, and heat treatment is performed for 60 minutes or more, the mobility of the thin film may be 16.46 cm 2 · s -1 · V -1 . According to one embodiment, the post-treatment process may be performed for at least 10 minutes.

During the post-treatment of the thin film, oxygen (O 2 ) gas may be supplied into the chamber. The oxygen (O 2 ) gas can be converted into ozone (O 3 ) gas by the UV. The generated ozone gas (O 3 gas) can lower the heat treatment temperature of the thin film. As a result, the post-treatment process for simultaneously performing the UV irradiation, the ozone (O 3 ) treatment, and the heat treatment on the thin film can be performed at a relatively low temperature (for example, 150 ° C or less).

Unlike the embodiments of the present invention described above, in the case of a transistor including a conventional oxide thin film, the mobility of the oxide thin film is improved by performing a subsequent heat treatment at a relatively high temperature to improve switching characteristics of the device . However, when a transistor is implemented on a flexible substrate including a plastic substrate or the like which can not be subjected to a high-temperature heat treatment process, it is not easy to perform a subsequent heat treatment process. To solve this problem, a low-temperature polycrystalline silicon (LTPS) process technology capable of a low-temperature process has been developed and used. However, low-temperature polycrystalline silicon (LTPS) process technology has difficulties in low mass production, high cost, and large size.

However, according to the embodiment of the present invention described above, the electrical characteristics of the thin film can be improved in a relatively low temperature process by simultaneously performing the UV irradiation, the ozone (O 3 ) treatment, and the heat treatment. In other words, the thin film containing an oxide of indium (In) and tin (Sn) can be simultaneously subjected to UV irradiation, ozone (O 3 ) treatment, and heat treatment to treat the thin film at a relatively low temperature, Accordingly, the electronic structure of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) constituting the thin film is changed at a relatively low temperature, and the mobility of the thin film can be improved. Accordingly, it is possible to provide a thin film manufacturing method that can be applied to a flexible substrate, can simplify the process, can manufacture a high mobility device, and can have a large area.

Hereinafter, a manufacturing apparatus for manufacturing the thin film according to the method for manufacturing a thin film according to the embodiment of the present invention described above will be described.

2 is a view for explaining an apparatus for manufacturing a thin film according to an embodiment of the present invention.

Referring to FIG. 2, an apparatus for manufacturing a thin film according to an embodiment of the present invention may include a heating unit 200, a chamber 300, and a UV / O 3 generating unit 400.

A substrate 310 may be disposed in the chamber 300 and a thin film 350 containing indium and tin oxide may be formed on the substrate 310. [ A purge device for purging the inside of the chamber 300 before the thin film 350 is formed may be disposed outside the chamber 300 and the chamber 300 and the purge device may be connected to each other . The inside of the chamber 300 may be maintained in a vacuum state.

An oxygen tank for supplying oxygen (O 2 ) gas into the chamber 300 may be disposed outside the chamber 300 during the post-treatment process of the thin film, Can be connected to each other.

The UV / O 3 generating unit 400 may be positioned on the chamber 300. UV generated in the UV / O 3 generating part 400 is irradiated to the thin film 350 on the substrate 310 and oxygen (O 2 ) gas can be supplied into the chamber 300. Oxygen (O 2 ) gas inside the chamber 300 can be converted into ozone gas by the UV. The UV may be irradiated to the substrate 310 and heat may be supplied to the chamber 300 by the heating unit 200. Accordingly, a post-treatment process including performing UV irradiation, ozone treatment, and heat treatment may be performed on the thin film 350. [

2, the heating unit 200 is disposed below the substrate 310, but the position of the heating unit 200 is not limited to a specific position inside or outside the chamber 300 . The type of the heating portion used is not particularly limited. For example, the heating unit may be any one of a heater, a hot plate, and a heating coil.

Hereinafter, a transistor having the thin film including the oxide of indium (In) and tin (Sn) according to the above-described embodiment of the present invention will be described with reference to FIGS.

The thin film containing the indium (In) and tin (Sn) oxides prepared according to the embodiment of the present invention described above can be easily used as an active layer of a thin film transistor.

3 is a view for explaining a first embodiment of a transistor including a thin film according to an embodiment of the present invention.

3, the transistor according to the first embodiment of the present invention includes a gate electrode 320, a gate insulating film 330, an active film 350, a drain electrode 370d, and a source electrode 370s).

The substrate 310 may be a glass substrate. Alternatively, the substrate 310 may be a plastic substrate, a silicon substrate, or a compound semiconductor substrate. The substrate 310 may be flexible.

The gate electrode 320 may be formed on the substrate 310. The gate electrode 320 may be formed of a metal. For example, the gate electrode 320 may be formed of at least one selected from the group consisting of Ni, Cr, Mo, Al, Ti, Cu, Alloy. The gate electrode 320 may be formed of a single film or multiple films using the metal. For example, the gate electrode 320 may be a triple layer in which molybdenum (Mo), aluminum (Al), and molybdenum (Mo) are successively laminated, or titanium (Ti) and copper It can be a double membrane. Or a single film of an alloy of titanium (Ti) and copper (Cu). Alternatively, the gate electrode 320 may be formed of a transparent conductive material. The gate insulating layer 330 may be formed on the gate electrode 320. The gate insulating film 330 may be formed of a high dielectric material such as silicon oxide, silicon nitride, silicon oxynitride, or metal oxide (for example, aluminum oxide or hafnium oxide).

The active layer 350 may be a thin film containing an oxide of indium (In) and tin (Sn) according to the embodiment of the present invention described above.

The source electrode 370s may be connected to a portion of the active layer 350 adjacent to one side of the gate electrode 320. The drain electrode 370d may be connected to a portion of the active layer 350 adjacent to the other side of the gate electrode 320. [

The source electrode 370s and the drain electrode 370d may be formed of one selected from the group consisting of Ni, Cr, Mo, Al, Ti, Cu, And alloys thereof. The source electrode 370s and the drain electrode 370d may be formed of a single film or a multi-layer film using the metal. Alternatively, the source electrode 370s and the drain electrode 370d may be formed of a transparent conductive material.

In contrast to the transistor described above, according to the second embodiment of the transistor including the thin film according to the embodiment of the present invention, the passivation film is provided on the protection pattern, and the source / drain electrodes penetrate the passivation film, Lt; / RTI > This will be described with reference to FIG.

4 is a view for explaining a second embodiment of a transistor including a thin film according to an embodiment of the present invention.

Referring to FIG. 4, the transistor includes a substrate 310, a gate electrode 320, a gate insulating layer 330, an active layer 350, a passivation film 340, a drain electrode 372d, and a source electrode 372s.

The substrate 310, the gate electrode 320, the gate insulating film 330 and the active film 350 are formed on the substrate 310, the gate electrode 320, the gate insulating film 330 And the active film 350, respectively.

The passivation film 340 may be formed on the active layer 350. The passivation film 340 may be formed of silicon oxide, silicon nitride, or silicon oxynitride.

The source electrode 372s may pass through the passivation film 340 and may be connected to a portion of the active layer 350 adjacent to one side of the gate electrode 320. The drain electrode 372d may pass through the passivation film 340 and may be connected to a portion of the active layer 350 adjacent to the other side of the gate electrode 320. [

5 is a view for explaining a third embodiment of a transistor including a thin film according to an embodiment of the present invention.

Referring to FIG. 5, according to the third embodiment of the transistor including the thin film according to the embodiment of the present invention, the transistor includes the active layer 510, the gate insulating layer 520, the gate electrode 530, a passivation film 540, a source electrode 550s, and a drain electrode 550d.

The substrate 500 may be the substrate 310 described with reference to FIG. 3, and the active layer 510 may be the active layer 350 described with reference to FIG.

The gate insulating layer 520 may be formed on the active layer 510. The gate insulating layer 520 may be formed of the same material as the gate insulating layer 330 described with reference to FIG.

The gate electrode 530 may be formed on the gate insulating layer 520 to overlap with the active pattern 512. The gate electrode 530 may be formed of the same material as the gate electrode 320 described with reference to FIG.

A passivation film 540 may be formed on the gate electrode 530. The passivation film 540 may be formed of an insulating material (for example, silicon oxide, silicon nitride, or silicon oxynitride).

The source electrode 550s may be connected to a portion of the active layer 510 adjacent to one side of the gate electrode 530 through the passivation film 240 and the gate insulating layer 520. The drain electrode 550d may be connected to a portion of the active layer 510 adjacent to the other side of the gate electrode 530 through the passivation film 540 and the gate insulating layer 520.

In addition to the transistors described with reference to Figs. 3 to 5, thin films containing oxides of indium (In) and tin (Sn) according to embodiments of the present invention may be used in transistors having various structures, It is self-evident.

Hereinafter, the evaluation results of the characteristics of the thin film produced according to the thin film manufacturing method according to the embodiment of the present invention described above will be described.

6 is an XAS graph for explaining the luminescence intensity due to X-ray absorption of a thin film containing an oxide of indium (In) and tin (Sn) according to an embodiment of the present invention, 6 is a graph enlarging a part of FIG. 6 to explain the change of In-O peak and Sn-O peak. FIG. 8 is an enlarged view of a part of FIG. 6 to explain the change of the edge portion of the indium-oxygen (In-O) peak.

6 and 7, the thin film including the indium (In) and tin (Sn) oxides prepared according to the embodiment of the present invention is irradiated with UV irradiation, ozone (O 3 ) And a post-treatment process was performed. The conditions of the post-treatment process are shown in Table 1 below. The thin film prepared with different post-treatment conditions was measured for X-ray absorption intensity by using XAS (X-ray Absorption Spectroscopy) apparatus. Particularly, the change of the indium-oxygen (In-O) peak and the tin-oxygen (Sn-O) peak is observed at the intensity peak according to the X- Respectively.

division Post-treatment process conditions Comparative Example 1 As-ITGO Comparative Example 2 Hot plate 150 ℃ Comparative Example 3 Tube furnace 150 ℃ Comparative Example 4 UV + O 3 60 min First Embodiment UV + O 3 + Thermal 10 min Second Embodiment UV + O 3 + Thermal 60 min

6 and 7, the indium-oxygen (In-O) peak indicating the chemical bond between indium (In) and oxygen (O) in the thin film is a peak Comparative Example 1, Comparative Example 2 in which heat treatment was performed at 150 ° C. using a hot plate, Comparative Example 4 in which UV irradiation was conducted for 60 minutes, Heat treatment at 150 ° C. using a tube furnace, 3 Comparative Example, a first embodiment in which the UV irradiation and ozone (O 3 ) treatment of the present invention and the heat treatment at 150 ° C are simultaneously performed for 10 minutes, and finally, the UV irradiation and ozone (O 3 ) The heat treatment of the second embodiment is performed for 60 minutes simultaneously.

The tin-oxygen (Sn-O) peak indicating the chemical bond between tin (Sn) and oxygen (O) in the thin film can be measured by the UV irradiation and ozone (O 3 ) A first embodiment in which the heat treatment is performed simultaneously for 60 minutes, a first embodiment in which the UV irradiation and the ozone (O 3 ) treatment of the present invention and the heat treatment at 150 ° C are simultaneously performed for 10 minutes, 4 Comparative Example, Comparative Example 2 in which a hot plate was subjected to heat treatment at 150 ° C, Comparative Example 1 in which no post-treatment was performed, and finally, heat treatment at 150 ° C was performed using a tube furnace And the third comparative example performed.

[Table 2] shows changes in contents of indium (In), tin (Sn), gallium (Ga), oxygen (O), and carbon (C) in the prepared thin film according to post- .

division Post-treatment process conditions In Sn Ga O C Comparative Example 1 As-ITGO 34.39 3.5 13.41 48.34 0.36 Comparative Example 2 Hot plate 150 ℃ 32.21 3.44 13.86 48.99 1.5 Comparative Example 3 Tube furnace 150 ℃ 34.06 3.62 13.56 48.01 0.75 Comparative Example 4 UV + O 3 60 min 34.37 3.67 12.61 48.83 0.51 Second Embodiment UV + O 3 + Thermal 60 min 28.93 3.12 12.04 55.73 0.17

Referring to Table 2, it can be confirmed that the indium (IN) content in the thin film is reduced only in the case of the second embodiment in which the thin film is simultaneously subjected to UV irradiation, ozone (O 3 ) treatment, and heat treatment .

Referring to FIG. 8, when the post-treatment is performed on the thin film according to the embodiment of the present invention, the amount of indium (In (In-O) peak indicating the chemical bond between oxygen (O) and oxygen (O).

Consequently, according to the embodiment of the present invention, the post-treatment process for simultaneously performing the UV irradiation, the ozone (O 3 ) treatment, and the heat treatment on the thin film containing the indium (In) and tin (Sn) The chemical bonding between indium (In) and oxygen (O) in the thin film is remarkably reduced as compared with the case of the post-treatment step in which at least one of the UV irradiation, the ozone treatment and the heat treatment is omitted , Tin (Sn), and oxygen (O) is remarkably increased. Accordingly, it is preferable to perform a post-treatment process including UV irradiation and ozone (O 3 ) treatment and heat treatment to the thin film containing the oxide of indium (In) and tin (Sn) It was found that this is an effective method for improving the mobility of the thin film by changing the electronic structure of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) constituting the thin film.

9 is a graph for explaining electrical characteristics of a transistor including a thin film according to an embodiment of the present invention.

Referring to FIG. 9, UV irradiation, ozone (O 3 ) treatment, and the like were performed on the thin film containing indium (In) and tin (Sn) And the post-treatment process was performed under different heat treatment conditions. Further, a transistor including the thin film manufactured through the above-described post-treatment process was fabricated, and a drain current value according to a gate voltage was measured. The measured values are shown in Table 3 below.

division Post-treatment process conditions Mobility
(cm 2 · s -1 · V -1 ) Vth
(V) SS
(cm) Carrier Concentration
(particle number / cm3) Comparative Example 5 UV + O 3 150 ° C, 10 min 1.73 10.02 0.58 Not measurable Comparative Example 6 UV + O 3 150 ° C, 60 min 10.18 5.89 0.29 Not measurable Comparative Example 7 Thermal (Hot plate) 150 캜, 60 min 1.25 3.02 0.41 Not measurable Comparative Example 8 Thermal (Tube furnace) 150 캜, 60 min 0.28 25.22 0.76 Not measurable First Embodiment UV + O 3 + Thermal 150 ° C, 10 min 13.35 0.86 0.32 Not measurable Second Embodiment UV + O 3 + Thermal 150 ° C, 60 min 16.46 0.77 0.76 -1.25E + 18 + 3.39E + 17

As can be seen from FIG. 9, in the post-treatment process of the thin film, compared to the comparative examples in which the UV irradiation and the ozone (O 3 ) treatment or the heat treatment were performed alone, O 3 ) treatment and the heat treatment are simultaneously performed, it is confirmed that the drain current value according to the gate voltage is large.

Referring to Table 3, the mobility of the thin film in the sixth comparative example in which UV irradiation and ozone (O 3 ) treatment were carried out for 60 minutes at 150 ° C as a post-treatment step for the thin film was 10.18 cm 2 · s -1 · V -1 and the heat treatment is performed at 150 ° C. for 60 minutes using a hot plate, the mobility of the thin film in the seventh comparative example is 1.25 cm 2 · s -1 · V -1 , And the mobility of the thin film in the case of the second embodiment of the present invention in which UV irradiation, ozone (O 3 ) treatment and heat treatment are performed at 150 ° C for 60 minutes is 16.46 cm 2 · s -1 · V -1 .

Thus, the post-treatment process of the film, UV irradiation and ozone (O 3) than in the case of the comparative example to perform processing or heat treatment alone, the post-treatment process of the film, UV irradiation, ozone (O 3) treatment , And the heat treatment were simultaneously carried out, the mobility of the thin film was remarkably high. Particularly, in the embodiments of the present invention in which the UV irradiation, the ozone (O 3 ) treatment, and the heat treatment are performed at the same time in the post-treatment process of the thin film, It was confirmed that the mobility, Vth (Threshold Voltage), SS (Sub-threshold slope), and carrier concentration value, that is, the electrical characteristic values of the thin film transistor, were better in the case of the second embodiment in which the post-treatment process time was 60 min.

As a result, when the UV irradiation, the ozone (O 3 ) treatment, and the heat treatment are simultaneously performed in the post-treatment process for the thin film containing the indium (In) and tin (Sn) oxides, It was confirmed that the electrical characteristics of the thin film were optimized as the post-treatment time for the thin film was increased.

200:
300: chamber
310: substrate
320: gate electrode
330: gate insulating film
340: passivation membrane
350: Thin film (active film)
370d: drain electrode
370s: source electrode
400: UV / O 3 generator
500: substrate
510: active membrane
520: gate insulating film
530: gate electrode
540: Feathration membrane
550d: drain electrode
550s: source electrode

Claims (13)

Preparing a substrate;
Forming a thin film formed of an oxide of indium (In), tin (Sn), and gallium (Ga) on the substrate; And
Performing a post-treatment process including UV irradiation and ozone (O3) treatment and simultaneously performing a heat treatment on the thin film to increase the mobility of the thin film,
The chemical bonding between indium (In) and oxygen (O) in the thin film formed of the indium (In), tin (Sn), and gallium (Ga) oxides is reduced by the post- Sn) and oxygen (O) is increased,
The content of indium (In) in the thin film is higher than the content of tin (Sn)
As a result of measuring the light emission intensity by X-ray absorption of the thin film, the intensity of the peak corresponding to the bond between indium (In) and oxygen (O) The intensity of light emitted from the light emitting device is lower than the intensity of light emitted from the light emitting device.
delete The method according to claim 1,
Oxygen (O 2 ) gas is supplied onto the thin film formed of the indium (In), tin (Sn), and gallium (Ga)
Wherein the oxygen (O 2 ) gas is converted into ozone (O 3 ) gas by the UV, and the thin film is treated with ozone (O 3 )
The method according to claim 1,
Wherein the post-treatment step is carried out at a temperature of 150 DEG C or less
delete The method according to claim 1,
When the light emission intensities of the thin films formed by the oxides of indium (In), tin (Sn), and gallium (Ga) are measured according to X-ray absorption, , A light emission intensity of a peak corresponding to a bond between indium (In) and oxygen (O) is decreased,
The method according to claim 1,
When the light emission intensities of the thin films formed by the oxides of indium (In), tin (Sn), and gallium (Ga) are measured according to X-ray absorption, , The emission intensity of a peak corresponding to the bond between tin (Sn) and oxygen (O) increases,
The method according to claim 1,
When the light emission intensities of the thin films formed by the oxides of indium (In), tin (Sn), and gallium (Ga) are measured according to X-ray absorption, , The width at which the intensity of the peak corresponding to the bond between indium (In) and oxygen (O) decreases decreases, the intensity of the peak corresponding to the bond between tin (Sn) and oxygen (O) ) ≪ / RTI > is greater than < RTI ID = 0.0 >
delete delete The method according to claim 1,
A method for manufacturing a thin film comprising the step of performing the post-treatment of the thin film formed of an oxide of indium (In), tin (Sn), and gallium (Ga)
Is formed of an oxide of indium (In), tin (Sn), and gallium (Ga)
The content of indium (In) is higher than the content of tin (Sn)
As a result of measurement of the luminescence intensity by X-ray absorption, the intensity of the peak corresponding to the bond between indium (In) and oxygen (O) was changed to a peak corresponding to the bond between tin (Sn) Of the light-emitting layer is lower than the light-emitting intensity of the thin film
A thin film according to claim 12;
A gate electrode on the thin film; And
And a gate insulating film between the gate electrode and the thin film.

KR1020150058294A 2015-04-24 2015-04-24 Thin film comprising Indium Tin Oxide(ITO), method of fabricating the same, and transistor comprising the same KR101726042B1 (en)

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Citations (1)

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US20110315214A1 (en) 2010-06-28 2011-12-29 Sumitomo Metal Mining Co., Ltd. Transparent electrically conductive substrate carrying thereon a surface electrode, a manufacturing method therefor, a thin-film solar cell and a manufacturing method therefor

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Publication number Priority date Publication date Assignee Title
US20110315214A1 (en) 2010-06-28 2011-12-29 Sumitomo Metal Mining Co., Ltd. Transparent electrically conductive substrate carrying thereon a surface electrode, a manufacturing method therefor, a thin-film solar cell and a manufacturing method therefor

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