KR101724214B1 - Single crystal ingot growing apparatus - Google Patents

Single crystal ingot growing apparatus Download PDF

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Publication number
KR101724214B1
KR101724214B1 KR1020150174986A KR20150174986A KR101724214B1 KR 101724214 B1 KR101724214 B1 KR 101724214B1 KR 1020150174986 A KR1020150174986 A KR 1020150174986A KR 20150174986 A KR20150174986 A KR 20150174986A KR 101724214 B1 KR101724214 B1 KR 101724214B1
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South Korea
Prior art keywords
magnetic field
coils
change
single crystal
field coils
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KR1020150174986A
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Korean (ko)
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왕학의
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주식회사 엘지실트론
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to an apparatus for growing a single crystal ingot, which can detect a change in a magnetic field distribution, before/after performing a process for growing the single crystal ingot, and control removal of the magnetic field distribution. The apparatus for growing the single crystal ingot according to the present invention has each magnetic field coil, which receives an electrical current by each electrical current supplying part to form the magnetic field distribution. Furthermore, the apparatus for growing the single crystal ingot detects the change in the magnetic field distribution through a magnetic field detection part, before/after performing the process for growing the single crystal ingot, further removes the magnetic field distribution change by adjusting a height of magnetic field coils, and changes the electrical current supplied to each magnetic field coil.

Description

[0001] The present invention relates to a single crystal ingot growing apparatus,

The present invention relates to a monocrystalline ingot growing apparatus capable of detecting changes in magnetic field distribution before and after a single crystal ingot growing step and controlling the magnetic field distribution to be eliminated.

In general, a single crystal ingot used as a material for producing electronic parts such as semiconductors is manufactured by Czochralski (hereinafter referred to as CZ) method.

A method of producing a single crystal ingot using the CZ method is a method of manufacturing a single crystal ingot by filling a quartz crucible with a solid raw material such as poly silicon and heating it with a heater to form a silicon melt, The bubbles in the silicon melt are removed, and then a necking process, a shouldering process, a body growth process, and a tailing process are sequentially performed.

Of course, in the CZ method, natural convection occurs in the silicon melt because the silicon melt is heated using a heater provided on the side of the crucible.

In addition, since the rotational speed of the single crystal or the quartz crucible is adjusted to obtain a defect-free high-quality silicon single crystal due to vacancy or self-interstitial, Convection also occurs.

Natural convection and forced convection of the silicon melt are controlled by a method of suppressing the convection of the silicon melt in the vertical direction by applying a horizontal magnetic field.

However, due to the asymmetrical convection distribution of the silicon melt, a relatively temperature difference occurs on the surface of the silicon melt, and the oxygen concentration distribution at the silicon solid-liquid interface can not be maintained constant due to such temperature difference, have.

Therefore, it is important to control the magnetic field distribution before proceeding with the single crystal ingot growing process in order to stabilize the flow of the silicon melt and to control the quality such as oxygen concentration.

FIG. 1 is a plan view showing the structure of magnetic field coils applied to a monocrystalline ingot growing apparatus according to the prior art, and FIG. 2 is a diagram showing an initial magnetic field measuring apparatus applied to a monocrystalline ingot growing apparatus according to the prior art.

 1, a conventional single crystal ingot growing apparatus is provided with a chamber C for providing a space in which a single crystal ingot growing process is performed, and four magnetic field coils 1, 2, 3, 4 are arranged at regular intervals, and the magnetic field coils 1, 2, 3, 4 are connected to a current supply unit 10 for supplying current as well as being connected to each other.

Accordingly, when the current supply unit 10 supplies a current, a magnetic field distribution is formed around the magnetic field coils 1, 2, 3, and 4 in one direction, and in accordance with the magnetic field distribution, The flow of the silicon melt can be controlled.

Of course, when the magnetic field distribution is set in advance to improve the quality of the ingot, the current supplied to the magnetic field coils (1, 2, 3, 4) is also set accordingly, .

When the chamber C is assembled inside the magnetic field coils 1, 2, 3 and 4, the space between the chamber C and the magnetic field coils 1, It is not easy to measure the magnetic field distribution.

Therefore, as shown in FIG. 2, a magnetic field distribution is measured by mounting a jig having a grid shape in a state where only the magnetic field coils (1, 2, 3, 4) are installed.

However, according to the related art, there are various factors such as a change in the current supplied to the magnetic field coil, a magnetic field interference caused by other magnets, a minute change in magnetic field coil or part, There is a problem that it is difficult to periodically measure the fluctuation.

In addition, according to the related art, even when a change in the magnetic field distribution is detected, since the current flows in only one direction due to the structure in which the magnetic field coils are connected to each other, it is difficult to precisely control the respective directional components of the magnetic field, There is a problem that appears.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide a single crystal ingot growing apparatus capable of detecting changes in magnetic field distribution before and after a single crystal ingot growing step, It has its purpose.

The present invention provides a method of manufacturing a silicon single crystal ingot, comprising: a chamber for providing a space for growing a single crystal ingot from a silicon melt; A plurality of magnetic field coils positioned around the chamber at regular intervals and forming a magnetic field distribution; A plurality of current supply units for applying respective currents to the magnetic field coils; And a magnetic field sensing unit that is insertable between the chamber and the magnetic field coils and senses a change in a magnetic field distribution. The magnetic field sensing unit senses a change in the magnetic field distribution, Or varying the respective currents applied to the magnetic field coils.

delete

In the single crystal ingot growing apparatus according to the present invention, each of the magnetic field coils is supplied with a current by each of the current supplying units to form a magnetic field distribution. The magnetic field distribution sensing unit detects a change in the magnetic field distribution before and after the single crystal ingot growing step Further, the height of the magnetic field coils can be adjusted so as to eliminate the change in the magnetic field distribution, or the current supplied to each magnetic field coil can be varied.

Therefore, the initial magnetic field distribution is maintained as it is during the growth of the single crystal ingot, thereby stabilizing the flow of the silicon melt and controlling the oxygen concentration, thereby reducing the quality fluctuation of the single crystal ingot.

1 is a plan view showing the structure of magnetic field coils applied to a single crystal ingot growing apparatus according to the related art.
2 is a view showing an initial magnetic field measuring apparatus applied to a single crystal ingot growing apparatus according to the prior art.
3 is a side cross-sectional view illustrating a single crystal ingot growing apparatus according to the present invention.
4 is a plan view showing the structure of magnetic field coils applied to the single crystal ingot growing apparatus according to the present invention.
5 is a side view showing a magnetic field sensing unit applied to the single crystal ingot growing apparatus according to the present invention.
6 is a flowchart showing a method of correcting a magnetic field of a single crystal ingot growing apparatus according to the present invention.

Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.

FIG. 3 is a side sectional view showing a single crystal ingot growing apparatus according to the present invention, and FIG. 4 is a plan view showing a structure of magnetic field coils applied to the single crystal ingot growing apparatus according to the present invention.

3, the single crystal ingot growing apparatus includes a chamber 110, four magnetic field coils 121, 122, 123 and 124, four current supplying units 131, 132, 133 and 134, and a magnetic field sensing unit 140 .

The chamber 110 is a cylindrical closed space and provides a space for growing a single crystal ingot IG from a silicon melt. The crucible 111, the heater 112, and a heat insulating material (not shown) do.

Therefore, when the polycrystalline silicon is injected into the crucible 111, the heater 112 heats the crucible 111 to form a silicon melt, and the seed suspended from the crucible 111 is lowered from the crucible 111 , Immersed in a silicon melt, and then gradually raised to grow a single crystal ingot.

The magnetic field coils 121, 122, 123, and 124 are formed of superconducting coils arranged at regular intervals in the circumferential direction around the chamber 110, and are configured to accommodate the superconducting coils in the cylindrical vacuum container through the respective cylindrical coolant vessels.

Further, as the height of the magnetic field coils 121, 122, 123, and 124 is adjusted, the mounting position of the magnetic field coils 121, 122, 123, and 124 may be changed. Alternatively, the magnetic coils may be automatically changed using a separate device, or manually.

The current supply units 131, 132, 133, and 134 may be connected to the magnetic field coils 121, 122, 123, and 124 to supply electric current, or may be connected to each other.

At this time, the magnetic field coils 121, 122, 123, and 124 close to each other supply a current so that current flows in opposite directions, and the magnitude of the current can be controlled.

Of course, the magnitude of the magnetic field generated by the magnetic field coils 121, 122, 123, and 124 increases as the magnitude of the current supplied by the current supply units 131, 132, 133, and 134 increases.

The magnetic field sensing unit 140 is configured to be inserted into a narrow space between the chamber 110 and the magnetic field coils 121, 122, 123 and 124 and has a maximum gauss position : MGP) is configured to measure the magnitude of the magnetic field as a vector component.

In the embodiment, the magnetic field sensing unit 140 detects magnetic field components Bx and By in the X and Y directions perpendicular to each other in a horizontal plane passing through the centers of the magnetic field coils 121, 122, 123, and 124, Axis direction and Bz, which is the magnetic field component in the Z axis direction, located on the axis.

5 is a side view showing a magnetic field sensing unit applied to the single crystal ingot growing apparatus according to the present invention.

The magnetic field sensing unit 140 may include a guide, a sensor, a motor, and a power transmission unit as shown in FIG.

The guide 141 has a cylindrical shape in which a space between the chamber 110 (shown in Fig. 4) and the magnetic field coils 121, 122, 123 and 124 (shown in Fig. 4), that is, the magnetic field coils 121, 122, 123, And has a long shaft shape which can be inserted in the vertical direction on the inside of the container.

Of course, the guide 141 should be formed long enough to reach the maximum magnetic field position MGP.

The sensor 142 is installed to be able to move up and down along the guide 141 and is configured to measure a magnetic field as a vector component so that the magnitude and direction of the magnetic field can be measured at one point.

In the embodiment, the sensor 142 can analyze Bx, By, and Bz, which are magnetic field components in the X, Y, and Z axis directions, and accurately detect the change in magnitude and direction of the magnetic field.

The motor 143 is provided at one side of the upper portion of the guide 141 to provide a driving force for the sensor 142 to move up and down along the guide 141. The magnetic coils 121, 122, 123, Can be supported on the upper side of the cylindrical container.

The power transmission means 144 is provided between the guide 141 and the motor 143 and is configured to convert the rotational force of the motor 143 into a linear reciprocating motion of the sensor 142.

4) and the magnetic field coils 121, 122, 123, and 124 (shown in FIG. 4), the guide 141 detects the change of the magnetic field distribution by the magnetic field sensing unit 140, And when the sensor 142 is moved along the guide 141 to reach the maximum magnetic field position MGP, the magnetic field distribution is measured as a vector component of Bx, By, Bz.

Of course, before or after the monocrystalline ingot growing step proceeds, it is possible to detect the change in the magnetic field distribution.

Therefore, when the change in Bz is indicated, the vertical coils of the magnetic field coils 121, 122, 123, and 124 (shown in FIG. 4) are adjusted to cancel the change.

In the embodiment, when the change of Bz is indicated, the sensor 142 is moved on the guide 141 to a point where there is no change in the Bz, and the Z axis elevation of the magnetic field coils 121, 122, 123, Is moved by the movement distance of the sensor (142).

Further, when the change of Bx and By is shown, the respective currents applied to the magnetic field coils 121, 122, 123, and 124 (shown in FIG. 4) are adjusted to offset the change.

In the embodiment, in order to form a magnetic field distribution in a direction opposite to the change of Bx and By when the change of Bx and By is shown, the current supply units 131, 132, 133, and 134 (shown in FIG. 4) individually adjust current values, 122, 123, and 124 (shown in FIG. 4) according to the positions of the magnetic field coils 121, 122, 123 and 124 (shown in FIG. 4) on the X axis and the Y axis.

6 is a flowchart showing a magnetic field correction method of the single crystal ingot growing apparatus according to the present invention.

The magnetic field correction method of the single crystal ingot growing apparatus of the present invention is characterized in that when the initial magnetic field and the corresponding current value are set before the ingot growth as shown in FIG. 6, the actual magnetic field distribution is measured at various points of the maximum magnetic field position (Refer to S1)

Next, the current magnetic field distribution after ingot growth is measured equally at one point of the maximum magnetic field position (MGP) (see S2).

Of course, the magnetic field distribution before and after the ingot growth is measured as a vector component representing both the magnitude and direction of the magnetic field, and can be expressed as Bx, By, Bz.

However, as the ingot growth process proceeds, the magnetic field distribution can be changed by various factors described above.

Therefore, it is determined whether or not the magnetic field distribution changes at one point of the maximum magnetic field position MGP before and after the ingot growth (see S3).

First, if there is no change in the magnetic field distribution, the magnetic field distribution change is determined again by changing the magnetic field measurement position to another point of the maximum magnetic field position MGP (see S4).

However, if there is a change in the magnetic field distribution, control is performed so as to eliminate the change in accordance with the Bx, By, and Bz components.

At this time, if there is a Bz component change, the up / down coils of the magnetic field coils are changed to the point where there is no Bz component change (refer to S5 and S6)

Further, if there is a change in the Bx and By components, the current values applied to the magnetic field coils are varied so that the Bx and By component variations are canceled (see S7 and S8)

As described above, the initial magnetic field distribution is maintained as it is during the growth of the monocrystalline ingot repeatedly grown, so that the flow of the silicon melt can be stabilized and the oxygen concentration can be controlled, thereby reducing fluctuations in the quality of the single crystal ingot.

110: chambers 121, 122, 123, and 124: magnetic field coils
131, 132, 133, 134: current supply units 140:
141: Guide 142: Sensor
143: motor 144: power transmission means

Claims (11)

A chamber for providing a space for growing a single crystal ingot from the silicon melt;
A plurality of magnetic field coils positioned outside the chamber at regular intervals and forming a magnetic field distribution;
A plurality of current supply units for applying respective currents to the magnetic field coils; And
And a magnetic field sensing unit located between the chamber and the magnetic field coils and sensing a change in the magnetic field distribution,
Wherein the magnetic field sensing unit comprises:
A shaft-shaped guide inserted vertically into a space between the chamber and the magnetic field coils and positioned so as to include a maximum magnetic field position of the magnetic field coils,
A sensor installed in the guide for measuring the magnitude and direction of the magnetic field,
And a motor provided at an upper side of the guide and providing a driving force for the sensor to ascend and descend along the guide,
In order to eliminate a change in the magnetic field distribution sensed by the magnetic field sensing unit,
The height of the magnetic field coils may be varied in the vertical direction,
And varying each current applied to the magnetic field coils. delete The method according to claim 1,
Wherein the magnetic field sensing unit comprises:
In the Maximum Gauss Plane (MGP), the change of the current magnetic field distribution is detected as a vector component based on the initial magnetic field distribution,
Wherein Bx and By are magnetic field components in the X and Y axis directions orthogonal to each other in a horizontal plane passing through the centers of the magnetic field coils and Bz which is a magnetic field component in the Z axis direction located on the central axis of the chamber. The method of claim 3,
And the elevation of the magnetic field coils is adjusted so as to eliminate the change of Bz. The method of claim 3,
And each of the currents applied to the magnetic field coils is adjusted so as to eliminate the change of Bx and By. The method according to claim 1,
Wherein the magnetic field coils comprise four superconducting coils arranged at regular intervals around the chamber,
Wherein the current supplying portions comprise four current supplying portions for supplying current to the respective magnetic field coils. delete delete delete delete delete
KR1020150174986A 2015-12-09 2015-12-09 Single crystal ingot growing apparatus KR101724214B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113638037A (en) * 2020-05-11 2021-11-12 西安奕斯伟材料科技有限公司 Single crystal furnace and preparation method of monocrystalline silicon

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001302393A (en) 2000-04-26 2001-10-31 Mitsubishi Electric Corp Device for pulling silicon single crystal
JP2004189559A (en) * 2002-12-12 2004-07-08 Sumitomo Mitsubishi Silicon Corp Single crystal growth method
KR100793950B1 (en) 2005-07-27 2008-01-16 주식회사 실트론 Silicon single crystal ingot and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001302393A (en) 2000-04-26 2001-10-31 Mitsubishi Electric Corp Device for pulling silicon single crystal
JP2004189559A (en) * 2002-12-12 2004-07-08 Sumitomo Mitsubishi Silicon Corp Single crystal growth method
KR100793950B1 (en) 2005-07-27 2008-01-16 주식회사 실트론 Silicon single crystal ingot and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113638037A (en) * 2020-05-11 2021-11-12 西安奕斯伟材料科技有限公司 Single crystal furnace and preparation method of monocrystalline silicon

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