KR101717476B1 - Apparatus for growing a graphene - Google Patents

Abstract

An embodiment includes a chamber; A dome disposed within the chamber and having a susceptor disposed therein and forming a closed space; A raw material supply unit disposed inside the dome and supplying the raw material gas toward the susceptor; And a heater for heating the dome, wherein the raw material supply portion includes a head to which raw material gas is supplied from the outside of the dome and an injection hole to discharge the raw material gas from the head toward the susceptor, And the ejected nozzles are arranged asymmetrically with respect to the center of the susceptor.

Description

{APPARATUS FOR GROWING A GRAPHENE}

An embodiment relates to a graphen growth apparatus, and more particularly, to an apparatus for growing graphene by a CVD (chemical vapor deposition) method.

Low-dimensional nanomaterials composed of carbon atoms include fullerene, carbon nanotube, graphene, and graphite. That is, when the carbon atoms form a hexagonal shape and become a ball, fullerene, which is a 0-dimensional structure, carbon nanotubes when dried in a 1-dimensional manner, graphene when made up of one atom in two-dimensional form, can do.

Graphene is not only very stable and excellent in electrical / mechanical / chemical properties, it is also a good conductive material that can move electrons 100 times faster than silicon and can flow about 100 times more current than copper. It has been proved through experiments that a method of separating the particles has been found.

Graphene has the advantage that it is very easy to fabricate 1D or 2D nanopatterns because it is composed of carbon, which is a relatively light element, and it can control the semiconductor-conductor properties as well as the variety of chemical bonds of carbon. It is possible to manufacture a wide variety of functional devices such as sensors and memories.

Despite the excellent electrical / mechanical / chemical properties of graphene, mass-synthesis methods have not been developed in the past, so research on practical applications has been limited.

In the conventional mass synthesis method, graphite was mechanically pulverized and dispersed in a solution, followed by self-assembly to form a thin film. The advantage of being able to synthesize at a relatively low cost, however, is that the electrical and mechanical properties of the graphene pieces are not as expected due to the overlapping structure of the graphene pieces.

Graphene can be used as a substitute for indium tin oxide (ITO), a typical transparent electrode, especially in the display field.

ITO is widely applied to displays, touch screens, solar cells, etc. Recently, due to the depletion of indium, the unit price has risen and urgent development of alternative materials has been required. In addition, due to the property of ITO which is easy to break, application to next generation electronic products that can be folded, bent or stretched has been greatly restricted.

Graphene has the advantage of being able to synthesize and pattern in a relatively simple manner while having excellent stretchability, flexibility and transparency.

Conventional graphene growth apparatuses of chemical vapor deposition (CVD) can grow graphene by spraying a raw material from a nozzle. The graphene growth apparatus has a dome forming a closed space in the chamber, and a susceptor for growing graphene can be disposed inside the dome.

A heater is disposed under the dome to heat the inside of the chamber, and an air supply unit is provided outside the chamber to supply air into the chamber to control the temperature inside the chamber, in particular, to cool the chamber.

1 is a view showing a structure of a nozzle of a conventional graphene growth apparatus.

The reaction gas, which is a raw material for growth of graphene, is supplied onto a susceptor 130 through a jet port 165 such as a shower head. A plurality of nozzles are provided in the injection port 165 of the surface opposite to the susceptor 130 so that the reactive gas supplied through the nozzles can be uniformly sprayed onto the entire surface of the susceptor 130.

However, the conventional graphene growth apparatus has the following problems.

The graphenes grown on the susceptor 130 should be grown to a uniform thickness without cracks, and when the pair of ejection openings 165 are arranged symmetrically, the graphene film thickness may not be uniform have.

The unevenness of the thickness of the graphene may be due to the fact that the injection directions of the reaction gas may not be identical to each other and the centrifugal force is different in the center region and the edge region of the susceptor to change the moving direction of the reaction gas.

The embodiment attempts to provide a graphen growth apparatus in which a uniform thickness of graphene thin film is grown on a susceptor in a graphen growth apparatus.

An embodiment includes a chamber; A dome disposed within the chamber and having a susceptor disposed therein and forming a closed space; A raw material supply unit disposed inside the dome and supplying the raw material gas toward the susceptor; And a heater for heating the dome, wherein the raw material supply portion includes a head to which raw material gas is supplied from the outside of the dome and an injection hole to discharge the raw material gas from the head toward the susceptor, And the ejected nozzles are arranged asymmetrically with respect to the center of the susceptor.

The distance between each of the nozzles may not be constant.

The diameter of each nozzle may not be constant.

A plurality of ejection openings may be provided, and the number of nozzles disposed in each of the ejection openings may be different.

The jetting port may have a predetermined angle with the surface of the susceptor.

The jetting port includes a plurality of nozzles, and the angle at which the raw material gas is jetted from the nozzles may not be constant.

The jetting port includes a plurality of nozzles and an angle formed between a traveling direction of the raw material gas ejected from the nozzles and a normal line of the surface of the susceptor may be smallest in a region corresponding to the center of the susceptor.

The jetting port includes a plurality of nozzles and the angle between the traveling direction of the raw material gas ejected from the nozzles and the normal line of the surface of the susceptor can be greatest in a region corresponding to the edge of the susceptor.

The graphene growth apparatus according to the embodiment can grow graphene uniformly by spraying the raw material gas of the entire region of the susceptor uniformly when the graphene is grown by the CVD process, Or if it is thinly grown, the growth direction of graphene to a certain thickness can be achieved by adjusting the injection direction and injection amount of the raw material gas or the like.

The graphenes grown in the above-described graphene growth apparatus are excellent in quality because they do not crack uniformly in thickness, and can be used for display materials such as organic light emitting devices (OLEDs), in particular, indium tin oxide ; ITO). ≪ / RTI >

FIG. 1 is a view showing a structure of a nozzle of a conventional graphene growth apparatus,
2 is a view showing an embodiment of a graphene growth apparatus,
FIG. 3 is a view showing a first embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2,
FIG. 4 is a view showing a second embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2,
FIG. 5 is a view showing a third embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2,
FIG. 6 is a view showing the arrangement of nozzles in the vertical direction in the graphene growth apparatus of FIG. 2,
FIG. 7 is a view showing a fourth embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2. FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The same components as those in the prior art are denoted by the same names and the same reference numerals for convenience of description, and a detailed description thereof will be omitted.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The same components as those in the prior art are denoted by the same names and the same reference numerals for convenience of description, and a detailed description thereof will be omitted.

The graphene growth apparatus according to the embodiment can grow graphene by CVD (Chemical Vapor Deposition) method. In particular, the nozzle of the injection hole for supplying the reaction gas, which is a raw material for graphene growth, is provided asymmetrically, Can be uniformly sprayed in the entire region of the susceptor.

2 is a view showing an embodiment of a graphene growth apparatus.

The graphene growth apparatus 200 according to the embodiment is an apparatus for growing graphene by a CVD (chemical vapor deposition) method.

The graphene growth apparatus 200 includes a chamber 210 having a closed space and a dome 220 made of quartz disposed therein and a susceptor 230 disposed inside the dome 220, A thin film of graphene (g) may be grown on the susceptor (230).

Although not shown in the upper portion of the susceptor 230, a raw material supplying portion is disposed, and the raw material supplying portion includes a head and a jetting port, and a detailed structure of the jetting port will be described later.

A heater 240 is disposed under the dome 220 to heat the inside of the chamber 210 and an air blower 250 is disposed outside the chamber 210 to supply air And the temperature inside the chamber 210 can be adjusted.

The space inside the dome 220 can be divided into an upper region a and a lower region b based on a partition 270. The partition 270 does not physically divide the inside of the dome 220 It may be a virtual separation membrane.

The raw material supply unit for supplying the reactive gas into the dome 220 supplies the reactive gas injected through the head onto the susceptor 230 through the injection port provided with a plurality of nozzles.

A plurality of jetting ports are provided in the upper direction of the susceptor 230. The reactive gas supplied through the jetting nozzles is sprayed onto the upper portion of the susceptor 230 through the nozzles of the jetting port and then is lowered by the gravity, ) Direction.

The air supply unit 250 is disposed at a position corresponding to the lower portion of the chamber 210 and an inlet may be formed in the chamber 201 in an area where air is supplied from the air supply unit 250. An outlet is formed at an upper portion of the chamber 210 to discharge the air injected from the air supply unit 250 through the inlet. The outlet may be disposed at a lower portion of the chamber 210.

The operation of the graphene growth apparatus according to the embodiment will be described as follows.

The heater 240 is heated to raise the temperature of the chamber 210 to 800 ° C or more so that hydrogen (H ₂ ), argon (Ar), or a mixed gas thereof can be injected into the chamber 210 as a process gas. After the chamber 210 and the dome 220 are heated, the raw material gas may be injected onto the susceptor 230 in the raw material supply unit 260.

The annealing process may be performed using hydrogen gas. The temperature inside the chamber 210 may be gradually lowered through the annealing process to lower the hardness and strength of the material.

The carbon component may be diffused into a metal catalyst by supplying methane CH4 into the chamber 210. At this time, copper (Cu) or nickel (Ni) may be used as the metal catalyst .

The carbon contained in the metal can be removed by a method such as outdiffusion while lowering the temperature in the chamber 210.

At this time, air can be supplied from the air feeder 250 into the chamber 210, as shown in FIG. 2, in order to remove heat inside the chamber 210 heated to a temperature of 800 ° C or higher. The cooling speed of the inside of the chamber 210 can be maintained at 5 DEG C / sec or more in the above-described graphene growth apparatus, 10 [deg.] C / second.

In the above-described graphene growth apparatus, an injection port or a nozzle through which the raw material gas is injected in the raw material supply unit 260 may be provided in an asymmetrical shape, which will be described below.

FIG. 3 is a view showing a first embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2. FIG.

A pair of ejection openings 265a and 265b disposed on the susceptor 230 are arranged so that the pair of ejection openings 265a and 265b can be disposed symmetrically with respect to the center of the susceptor 230. [ At this time, a plurality of nozzles are arranged in each of the jetting ports 265a and 265b, and a direction in which the jetting material is jetted from the nozzle toward the susceptor 230 is indicated by an arrow. The arrows are shown in the horizontal direction for the sake of convenience, but the actual injection direction can be referred to Figs. 6 to 7.

In FIG. 3, the distances d1 and d2 between the nozzles may not be constant and may be different from each other, that is, the nozzles may be arranged at irregular intervals. The irregular arrangement of these nozzles can control the distribution of the source gas injected into each region of the susceptor 230.

In FIG. 3, the arrangement intervals of the nozzles on the injection ports 265a and 265b are the same in some areas, and may be different in some areas.

Therefore, if the thickness of the graphene thin film is uneven when the nozzles are regularly arranged, the distance d1 between the nozzles is increased in the thicker region of the graphene thin film, and the distance d2 The nozzles in the ejection openings 265a and 265b can be made smaller and the raw material gas is ejected in the direction of the susceptor 230 through the ejection openings 265a and 265b in which the nozzles manufactured in this manner are disposed, 230, the raw material gas is uniformly sprayed, and the graphene thin film can be grown to a uniform thickness.

The non-uniform placement of the nozzles on the injection ports 265a, 265b in Fig. 3 may vary depending on the thickness distribution of the graphene grown on the susceptor 230. [

FIG. 4 is a view showing a second embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2. FIG.

In the embodiment shown in FIG. 3, the jetting ports 265a and 265b are arranged symmetrically with respect to each other. In this embodiment, the jetting ports 265a and 265b are asymmetric, They are arranged differently.

In the present embodiment, the injection port 265b on the right side is longer and more nozzles are provided than the injection port 265a on the left side in FIG. 4, so that more raw material gas can be supplied to the right side region of the susceptor 230. Jet nozzles 265a and 265b having the structure shown in Fig. 4 can be used if the thickness of the graphene in the left region of the susceptor 230 is large when the conventional jetting port 165 shown in Fig. 1 is used.

The uneven arrangement of the ejection openings 265a, 265b shown in Fig. 4 can be changed according to the thickness distribution of the graphene grown on the susceptor 230. Fig.

FIG. 5 is a view showing a third embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2. FIG.

Although only one injection port 265 is shown in this embodiment, a pair of injection ports 265 may be disposed on the susceptor 230 as in other embodiments.

In the embodiments described above, the size and diameter of the nozzles in the injection port are the same, but in this embodiment, the diameter of the nozzle (R1, R2, R3, R4 ) Are not constant but can be different from each other. In addition, some of the diameters (R1, R2, R3, R4) of the nozzles may be different from each other in the nozzle hole 265 disposed on the susceptor 230, and some of them may be the same.

Such an irregular arrangement of diameters or sizes of the nozzles can control the distribution of the source gas injected into each region of the susceptor 230.

Therefore, if the thickness of the graphene thin film is uneven when the nozzles are arranged at the same size, the diameter (R1) of the nozzle is increased in the thinner region of the graphene thin film and the diameter When the raw material gas is injected in the direction of the susceptor 230 through the injection port 265 in which the nozzles manufactured in this manner are disposed, the raw material gas is uniformly sprayed to the entire area of the susceptor 230 The graphene thin film can be grown to a uniform thickness.

In the present embodiment, the diameter R1 of the nozzle in the direction of the center region of the susceptor 230 is the largest and the diameter R4 of the nozzle in the direction of the edge region of the susceptor 230 is the smallest, Can be designed differently.

FIG. 6 is a view showing a vertical arrangement of nozzles in the graphene growth apparatus of FIG. 2. FIG.

The injection ports 265a and 265b on the susceptor 230 are arranged in a vertical direction and each of the injection ports 265a and 265b has a predetermined angle? And the vertical arrangement of the injection ports 265, 265a, 265b shown in Figs. 3 to 5 may be the same as that of Fig.

In FIG. 6, the raw material gas injected through the injection ports 265a and 265b in the upward direction can be lowered toward the susceptor 230.

FIG. 7 is a view showing a fourth embodiment of the nozzle structure in the graphene growth apparatus of FIG. 2. FIG.

Although only one jetting port is shown in this embodiment, a pair of jetting ports may be disposed on the susceptor 230 as in other embodiments.

In the present embodiment, the direction of the raw material gas jetted or discharged from the nozzles in the jetting ports disposed on the susceptor 230 to the susceptor 230 may be different from each other.

That is, the angle of the raw material gas ejected from the nozzle with respect to the direction perpendicular to the susceptor 230 (indicated by a dotted line) may be different from each other. More specifically, the first nozzle, which is closest to the center of the susceptor, The direction of the raw material gas injected from the susceptor 230 is the smallest in the direction perpendicular to the susceptor 230 (indicated by the dotted line), that is, the angle? 1 with the direction normal to the surface of the susceptor 230, The angle? 4 formed by the direction of the raw material gas ejected from the fourth nozzle arranged farthest from the center with the direction perpendicular to the susceptor 230 (shown by the dotted line) can be greatest.

The angles (? 1,? 2,? 3,? 4) between the raw material gas injected from the first to fourth nozzles and the direction perpendicular to the susceptor 230 may vary depending on the pumping direction of the process gas in the dome.

More specifically, since the pumping force may be small at the center of the susceptor disposed far away from the pumping of the process gas, the proceeding direction of the raw material gas ejected from the first nozzle may be in a direction perpendicular to the susceptor 230 1) of the susceptor 230 can be small, and the proceeding direction of the raw material gas injected from the fourth nozzle disposed at the edge region of the susceptor having the largest pumping force is perpendicular to the susceptor 230 The angle? 4 formed with one direction (shown by a dotted line) can be the largest.

In other words, the raw material gas can uniformly reach the entire region of the susceptor 230 by differentiating the injection direction of the raw material gas injected from the first to fourth nozzles in consideration of the external force such as pumping.

The angle? 1 formed by the direction of the raw material gas injected from the first nozzle and the direction perpendicular to the susceptor 230 is the largest in accordance with the traveling direction of the raw material gas injected from the first to fourth nozzles The angle? 4 formed by the direction of the raw material gas injected from the fourth nozzle disposed in the edge region and the direction perpendicular to the susceptor 230 may be the smallest.

In the present embodiment, the angles (? 1,? 2,? 3,? 4) formed by the raw material gas injected from the first to fourth nozzles with the direction perpendicular to the susceptor 230 It can be changed accordingly when another external force is present. In addition, in the above-described embodiments, in addition to the gaseous raw material, liquid or other raw materials may be supplied in the raw material supplying portion.

When the graphene is grown by the CVD process, the graphene can be grown to a uniform thickness by uniformly spraying the raw material gas of the entire region of the susceptor. In a specific region, the thickness of the graphene is thick or thin When grown, it is possible to grow the graphene to a certain thickness by adjusting the injection direction and injection amount of the raw material gas.

The graphenes grown in the above-described graphene growth apparatus are excellent in quality because they do not crack uniformly in thickness, and can be used for display materials such as organic light emitting devices (OLEDs), in particular, indium tin oxide ; ITO). ≪ / RTI >

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

200: graphene growth device 210: chamber
220: Dome 130, 230: Susceptor
240: heater 250: air supply unit
165, 265, 265a, 265b:
270:

Claims (8)

chamber;
A dome disposed within the chamber and having a susceptor disposed therein and forming a closed space;
A raw material supply unit disposed inside the dome and supplying the raw material gas toward the susceptor; And
And a heater for heating the dome,
Wherein the raw material supply portion includes a head to which the raw material gas is supplied from the outside of the dome and an ejection orifice for ejecting the raw material gas from the head toward the susceptor, Are arranged asymmetrically with respect to one another,
The nozzles,
And each of the graphenes is arranged along the longitudinal direction of the injection port and has a larger diameter from the edge region of the susceptor toward the center region of the susceptor. The method according to claim 1,
Wherein the distance between each of the nozzles is not constant. delete The method according to claim 1,
A graphene growing apparatus comprising a plurality of jetting ports, wherein the number of nozzles disposed in each jetting port is different. The method according to claim 1,
Wherein the jetting port has a predetermined angle with the surface of the susceptor. The method according to claim 1,
Wherein the jetting port includes a plurality of nozzles, and the angle at which the raw material gas is jetted from the nozzles is not constant. The method according to claim 6,
Wherein the jetting port includes a plurality of nozzles,
Wherein an angle formed between the proceeding direction of the raw material gas injected from the nozzles and the normal line of the surface of the susceptor is the smallest in a region corresponding to the center of the susceptor. The method according to claim 6,
Wherein the jetting port includes a plurality of nozzles,
Wherein an angle formed between the proceeding direction of the raw material gas injected from the nozzles and the normal line of the surface of the susceptor is largest in a region corresponding to the edge of the susceptor.

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