KR101716367B1 - Cu2ZnSnS4 나노 입자들 - Google Patents

Cu2ZnSnS4 나노 입자들 Download PDF

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Publication number
KR101716367B1
KR101716367B1 KR1020157029348A KR20157029348A KR101716367B1 KR 101716367 B1 KR101716367 B1 KR 101716367B1 KR 1020157029348 A KR1020157029348 A KR 1020157029348A KR 20157029348 A KR20157029348 A KR 20157029348A KR 101716367 B1 KR101716367 B1 KR 101716367B1
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znsns
nanoparticles
temperature
precursor
tin
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KR20150126966A (ko
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나탈리 그레스티
옴베르타 마살라
제임스 해리스
나이젤 피켓
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나노코 테크놀로지스 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • H01L31/1828—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Luminescent Compositions (AREA)
  • Powder Metallurgy (AREA)
KR1020157029348A 2013-03-15 2014-03-14 Cu2ZnSnS4 나노 입자들 Active KR101716367B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361798084P 2013-03-15 2013-03-15
US61/798,084 2013-03-15
PCT/IB2014/001118 WO2014140889A2 (en) 2013-03-15 2014-03-14 Cu2znsns4 nanoparticles

Publications (2)

Publication Number Publication Date
KR20150126966A KR20150126966A (ko) 2015-11-13
KR101716367B1 true KR101716367B1 (ko) 2017-03-14

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KR1020157029348A Active KR101716367B1 (ko) 2013-03-15 2014-03-14 Cu2ZnSnS4 나노 입자들

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US (2) US9206054B2 (https=)
EP (1) EP2994418B1 (https=)
JP (2) JP6138288B2 (https=)
KR (1) KR101716367B1 (https=)
CN (1) CN105164047B (https=)
HK (1) HK1215239A1 (https=)
WO (1) WO2014140889A2 (https=)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
US10453978B2 (en) 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
CN105226131B (zh) * 2015-08-24 2017-09-29 中国工程物理研究院材料研究所 一种铜锌锡硫吸收层薄膜的化学合成方法
US9935214B2 (en) 2015-10-12 2018-04-03 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
CN106629820B (zh) * 2016-09-09 2019-05-24 武汉理工大学 Cu2ZnSnS4纳米晶材料的可控制备方法
EP3837048A4 (en) * 2018-08-16 2022-01-26 Northwestern University POLYELEMENTARY NANOPARTICLES WITH HETEROSSTRUCTURE AND PROCESS FOR THEIR PRODUCTION
CN113044813B (zh) * 2019-12-26 2022-06-10 温州大学 一种铜锌锡硒纳米晶及其合成方法

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WO2009137637A2 (en) * 2008-05-09 2009-11-12 Board Of Regents, The University Of Texas System Nanoparticles and methods of making and using
WO2010098369A1 (ja) * 2009-02-27 2010-09-02 国立大学法人名古屋大学 半導体ナノ粒子及びその製法
US20120055554A1 (en) * 2009-05-21 2012-03-08 E.I. Du Pont De Nemours And Company Copper zinc tin chalcogenide nanoparticles
AU2010254120A1 (en) * 2009-05-26 2012-01-12 Purdue Research Foundation Synthesis of multinary chalcogenide nanoparticles comprising Cu, Zn, Sn, S, and Se
JP2013512311A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板
JP2013512306A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ＣＺＴＳ／Ｓｅ前駆体インクとＣＺＴＳ／Ｓｅ薄フィルムおよびＣＺＴＳ／Ｓｅ系光電池の製造方法
CN101830445B (zh) * 2009-12-15 2014-12-10 河南大学 一种以乙酰丙酮盐为原料合成无机纳米晶的方法
KR101144738B1 (ko) * 2009-12-28 2012-05-24 재단법인대구경북과학기술원 박막형 태양전지의 제조방법
US20120067408A1 (en) * 2010-09-16 2012-03-22 Solexant Corp. Sintered CZTS Nanoparticle Solar Cells
US20140144500A1 (en) * 2010-11-22 2014-05-29 E I Du Pont De Nemours And Company Semiconductor inks films, coated substrates and methods of preparation
WO2012075267A1 (en) * 2010-12-03 2012-06-07 E. I. Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102108540B (zh) * 2010-12-27 2012-07-25 中国科学院长春光学精密机械与物理研究所 合成单分散多元化合物纳米晶的方法
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
WO2014136562A1 (ja) * 2013-03-07 2014-09-12 株式会社村田製作所 化合物半導体超微粒子、超微粒子薄膜及び光電変換デバイス

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Title
- J. Am. Chem. Soc. 2012, 134, 2910-2913 (2012.1.30. 공개)

Also Published As

Publication number Publication date
CN105164047B (zh) 2019-03-15
US9359222B2 (en) 2016-06-07
WO2014140889A2 (en) 2014-09-18
KR20150126966A (ko) 2015-11-13
EP2994418A2 (en) 2016-03-16
US20150376026A1 (en) 2015-12-31
US20140273337A1 (en) 2014-09-18
HK1215239A1 (zh) 2016-08-19
EP2994418B1 (en) 2021-02-17
JP6138288B2 (ja) 2017-05-31
WO2014140889A3 (en) 2015-01-08
JP2017206431A (ja) 2017-11-24
JP6623192B2 (ja) 2019-12-18
JP2016515990A (ja) 2016-06-02
CN105164047A (zh) 2015-12-16
US9206054B2 (en) 2015-12-08

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