KR101714812B1 - 에피택셜 리프트오프를 이용한 플렉시블 광기전 디바이스의 제조 방법 및 에피택셜 성장에 사용되는 성장 기판의 무결성의 보존 방법 - Google Patents

에피택셜 리프트오프를 이용한 플렉시블 광기전 디바이스의 제조 방법 및 에피택셜 성장에 사용되는 성장 기판의 무결성의 보존 방법 Download PDF

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KR101714812B1
KR101714812B1 KR1020127009157A KR20127009157A KR101714812B1 KR 101714812 B1 KR101714812 B1 KR 101714812B1 KR 1020127009157 A KR1020127009157 A KR 1020127009157A KR 20127009157 A KR20127009157 A KR 20127009157A KR 101714812 B1 KR101714812 B1 KR 101714812B1
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protective layer
growth
growth substrate
substrate
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KR20120103762A (ko
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스티븐 알 포레스트
제라미 짐머만
규상 이
?팅 슈
??팅 슈
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더 리젠츠 오브 더 유니버시티 오브 미시간
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
KR1020127009157A 2009-09-10 2010-09-09 에피택셜 리프트오프를 이용한 플렉시블 광기전 디바이스의 제조 방법 및 에피택셜 성장에 사용되는 성장 기판의 무결성의 보존 방법 Active KR101714812B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US24137309P 2009-09-10 2009-09-10
US24137409P 2009-09-10 2009-09-10
US61/241,374 2009-09-10
US61/241,373 2009-09-10
US35829810P 2010-06-24 2010-06-24
US61/358,298 2010-06-24
PCT/US2010/048213 WO2011066029A2 (en) 2009-09-10 2010-09-09 Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

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KR20120103762A KR20120103762A (ko) 2012-09-19
KR101714812B1 true KR101714812B1 (ko) 2017-03-22

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US (2) US8378385B2 (https=)
EP (1) EP2462631B1 (https=)
JP (1) JP5619901B2 (https=)
KR (1) KR101714812B1 (https=)
CN (1) CN102804408B (https=)
AU (1) AU2010325106B2 (https=)
CA (1) CA2789391A1 (https=)
IN (1) IN2012DN03051A (https=)
TW (1) TWI550895B (https=)
WO (1) WO2011066029A2 (https=)

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AU2010325106A1 (en) 2012-04-12
US8378385B2 (en) 2013-02-19
US8927319B2 (en) 2015-01-06
TW201125152A (en) 2011-07-16
KR20120103762A (ko) 2012-09-19
CA2789391A1 (en) 2011-06-03
JP2013504878A (ja) 2013-02-07
JP5619901B2 (ja) 2014-11-05
EP2462631B1 (en) 2021-06-30
US20110186910A1 (en) 2011-08-04
WO2011066029A2 (en) 2011-06-03
EP2462631A2 (en) 2012-06-13
CN102804408B (zh) 2016-01-20
CN102804408A (zh) 2012-11-28
IN2012DN03051A (https=) 2015-07-31
TWI550895B (zh) 2016-09-21
US20130237001A1 (en) 2013-09-12
WO2011066029A3 (en) 2012-05-31

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