KR101701330B1 - 복합 확장 모드 공진기들 - Google Patents

복합 확장 모드 공진기들 Download PDF

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Publication number
KR101701330B1
KR101701330B1 KR1020157012451A KR20157012451A KR101701330B1 KR 101701330 B1 KR101701330 B1 KR 101701330B1 KR 1020157012451 A KR1020157012451 A KR 1020157012451A KR 20157012451 A KR20157012451 A KR 20157012451A KR 101701330 B1 KR101701330 B1 KR 101701330B1
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South Korea
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piezoelectric
axis
conversion layer
coefficients
layer
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Korean (ko)
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KR20150077441A (ko
Inventor
쳉지에 주오
종해 김
창한 호비 윤
상-준 박
필립 제이슨 스테파노
치 순 로
로버트 파울 미쿨카
마리오 프란시스코 벨레즈
라빈드라 브이. 셰노이
매튜 마이클 노와크
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퀄컴 엠이엠에스 테크놀로지스, 인크.
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02157Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of microelectro-mechanical resonators
    • H03H2009/02488Vibration modes
    • H03H2009/02496Horizontal, i.e. parallel to the substrate plane
    • H03H2009/02503Breath-like, e.g. Lam? mode, wine-glass mode
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02244Details of microelectro-mechanical resonators
    • H03H2009/02488Vibration modes
    • H03H2009/02527Combined
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241Bulk-mode MEMS resonators

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
KR1020157012451A 2012-10-22 2013-08-26 복합 확장 모드 공진기들 Expired - Fee Related KR101701330B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/657,653 2012-10-22
US13/657,653 US9331666B2 (en) 2012-10-22 2012-10-22 Composite dilation mode resonators
PCT/US2013/056614 WO2014065939A1 (en) 2012-10-22 2013-08-26 Composite dilation mode resonators

Publications (2)

Publication Number Publication Date
KR20150077441A KR20150077441A (ko) 2015-07-07
KR101701330B1 true KR101701330B1 (ko) 2017-02-01

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KR1020157012451A Expired - Fee Related KR101701330B1 (ko) 2012-10-22 2013-08-26 복합 확장 모드 공진기들

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Country Link
US (1) US9331666B2 (enExample)
EP (1) EP2909933A1 (enExample)
JP (1) JP6129978B2 (enExample)
KR (1) KR101701330B1 (enExample)
CN (1) CN104737449B (enExample)
WO (1) WO2014065939A1 (enExample)

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JP5762528B2 (ja) 2010-05-17 2015-08-12 ベクトン・ディキンソン・アンド・カンパニーBecton, Dickinson And Company 針注入深さ調整付き針組立体
WO2016154397A1 (en) 2015-03-24 2016-09-29 Carnegie Mellon University Two-dimensional mode resonators
CN108028638B (zh) * 2015-09-25 2021-01-05 株式会社村田制作所 水晶片以及水晶振子
ITUB20156009A1 (it) * 2015-11-30 2017-05-30 St Microelectronics Srl Riflettore mems biassiale risonante con attuatori piezoelettrici e sistema mems proiettivo includente il medesimo
US10618079B2 (en) * 2016-02-29 2020-04-14 Qualcomm Incorporated Piezoelectric micromechanical ultrasonic transducers and transducer arrays
US10903818B2 (en) * 2016-04-01 2021-01-26 Intel Corporation Piezoelectric package-integrated film bulk acoustic resonator devices
JP6545772B2 (ja) * 2017-01-03 2019-07-17 ウィン セミコンダクターズ コーポレーション 質量調整構造付きバルク音響波共振装置の製造方法
JP2018182615A (ja) * 2017-04-18 2018-11-15 株式会社村田製作所 弾性波装置
EP3547552B1 (en) * 2018-03-28 2024-03-20 Capital One Services, LLC Systems and methods for providing vibration transduction and radio-frequency communication in proximity to an electrically conductive structure
JP7315424B2 (ja) * 2018-09-28 2023-07-26 日東電工株式会社 圧電デバイス、及び圧電デバイスの製造方法
CN109889177B (zh) * 2018-12-26 2023-04-07 天津大学 具有掺杂隔离结构的体声波谐振器
CN109889173B (zh) * 2018-12-26 2022-07-12 天津大学 柔性基底薄膜体声波滤波器的连接结构
CN114830017A (zh) 2019-09-25 2022-07-29 深圳市海谱纳米光学科技有限公司 一种可调光学滤波器件
US11439361B2 (en) * 2020-01-29 2022-09-13 GE Precision Healthcare LLC Methods and systems for medical imaging vibration reduction
CN115989637A (zh) * 2020-09-03 2023-04-18 株式会社村田制作所 弹性波装置

Citations (1)

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US20070267942A1 (en) 2006-05-19 2007-11-22 Hisanori Matsumoto Piezoelectric film resonator, radio-frequency filter using them, and radio-frequency module using them

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JP3514222B2 (ja) * 1999-11-17 2004-03-31 株式会社村田製作所 圧電共振子、電子部品及び電子機器
US6441539B1 (en) * 1999-11-11 2002-08-27 Murata Manufacturing Co., Ltd. Piezoelectric resonator
US6385429B1 (en) 2000-11-21 2002-05-07 Xerox Corporation Resonator having a piezoceramic/polymer composite transducer
US20040027030A1 (en) * 2002-08-08 2004-02-12 Li-Peng Wang Manufacturing film bulk acoustic resonator filters
EP1489740A3 (en) * 2003-06-18 2006-06-28 Matsushita Electric Industrial Co., Ltd. Electronic component and method for manufacturing the same
JP2005277454A (ja) * 2004-03-22 2005-10-06 Tdk Corp 圧電共振器およびそれを備えた電子部品
WO2007000929A1 (ja) 2005-06-29 2007-01-04 Matsushita Electric Industrial Co., Ltd. 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器
US7868522B2 (en) * 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US8008993B2 (en) * 2005-09-30 2011-08-30 Nxp B.V. Thin-film bulk-acoustic wave (BAW) resonators
WO2009011022A1 (ja) * 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
US7786826B2 (en) * 2007-10-12 2010-08-31 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Apparatus with acoustically coupled BAW resonators and a method for matching impedances
WO2010013197A2 (en) 2008-08-01 2010-02-04 Ecole polytechnique fédérale de Lausanne (EPFL) Piezoelectric resonator operating in thickness shear mode
US8513863B2 (en) * 2009-06-11 2013-08-20 Qualcomm Mems Technologies, Inc. Piezoelectric resonator with two layers
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US8659611B2 (en) * 2010-03-17 2014-02-25 Qualcomm Mems Technologies, Inc. System and method for frame buffer storage and retrieval in alternating orientations
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Also Published As

Publication number Publication date
JP6129978B2 (ja) 2017-05-17
KR20150077441A (ko) 2015-07-07
WO2014065939A1 (en) 2014-05-01
US9331666B2 (en) 2016-05-03
EP2909933A1 (en) 2015-08-26
JP2015537439A (ja) 2015-12-24
US20140111064A1 (en) 2014-04-24
CN104737449B (zh) 2017-12-08
CN104737449A (zh) 2015-06-24

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