CN104737449B - 复合扩张模式谐振器 - Google Patents

复合扩张模式谐振器 Download PDF

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Publication number
CN104737449B
CN104737449B CN201380054292.0A CN201380054292A CN104737449B CN 104737449 B CN104737449 B CN 104737449B CN 201380054292 A CN201380054292 A CN 201380054292A CN 104737449 B CN104737449 B CN 104737449B
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China
Prior art keywords
piezoelectric
axis
conversion layer
along
layer
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Expired - Fee Related
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CN201380054292.0A
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English (en)
Chinese (zh)
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CN104737449A (zh
Inventor
左诚杰
龙海·金
章汉·霍比·云
朴相俊
菲利普·贾森·斯蒂法诺
智升·罗
罗伯特·保罗·米库尔卡
马里奥·弗朗西斯科·韦莱兹
其他发明人请求不公开姓名
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Nujira Ltd
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Nujira Ltd
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Publication of CN104737449A publication Critical patent/CN104737449A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
    • H03H2009/02503—Breath-like, e.g. Lam? mode, wine-glass mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02527—Combined
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H03H2009/241—Bulk-mode MEMS resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN201380054292.0A 2012-10-22 2013-08-26 复合扩张模式谐振器 Expired - Fee Related CN104737449B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/657,653 2012-10-22
US13/657,653 US9331666B2 (en) 2012-10-22 2012-10-22 Composite dilation mode resonators
PCT/US2013/056614 WO2014065939A1 (en) 2012-10-22 2013-08-26 Composite dilation mode resonators

Publications (2)

Publication Number Publication Date
CN104737449A CN104737449A (zh) 2015-06-24
CN104737449B true CN104737449B (zh) 2017-12-08

Family

ID=49085246

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380054292.0A Expired - Fee Related CN104737449B (zh) 2012-10-22 2013-08-26 复合扩张模式谐振器

Country Status (6)

Country Link
US (1) US9331666B2 (enExample)
EP (1) EP2909933A1 (enExample)
JP (1) JP6129978B2 (enExample)
KR (1) KR101701330B1 (enExample)
CN (1) CN104737449B (enExample)
WO (1) WO2014065939A1 (enExample)

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JP5762528B2 (ja) 2010-05-17 2015-08-12 ベクトン・ディキンソン・アンド・カンパニーＢｅｃｔｏｎ， Ｄｉｃｋｉｎｓｏｎ Ａｎｄ Ｃｏｍｐａｎｙ 針注入深さ調整付き針組立体
WO2016154397A1 (en) 2015-03-24 2016-09-29 Carnegie Mellon University Two-dimensional mode resonators
CN108028638B (zh) * 2015-09-25 2021-01-05 株式会社村田制作所 水晶片以及水晶振子
ITUB20156009A1 (it) * 2015-11-30 2017-05-30 St Microelectronics Srl Riflettore mems biassiale risonante con attuatori piezoelettrici e sistema mems proiettivo includente il medesimo
US10618079B2 (en) * 2016-02-29 2020-04-14 Qualcomm Incorporated Piezoelectric micromechanical ultrasonic transducers and transducer arrays
US10903818B2 (en) * 2016-04-01 2021-01-26 Intel Corporation Piezoelectric package-integrated film bulk acoustic resonator devices
JP6545772B2 (ja) * 2017-01-03 2019-07-17 ウィン セミコンダクターズ コーポレーション 質量調整構造付きバルク音響波共振装置の製造方法
JP2018182615A (ja) * 2017-04-18 2018-11-15 株式会社村田製作所 弾性波装置
EP3547552B1 (en) * 2018-03-28 2024-03-20 Capital One Services, LLC Systems and methods for providing vibration transduction and radio-frequency communication in proximity to an electrically conductive structure
JP7315424B2 (ja) * 2018-09-28 2023-07-26 日東電工株式会社 圧電デバイス、及び圧電デバイスの製造方法
CN109889177B (zh) * 2018-12-26 2023-04-07 天津大学 具有掺杂隔离结构的体声波谐振器
CN109889173B (zh) * 2018-12-26 2022-07-12 天津大学 柔性基底薄膜体声波滤波器的连接结构
CN114830017A (zh) 2019-09-25 2022-07-29 深圳市海谱纳米光学科技有限公司 一种可调光学滤波器件
US11439361B2 (en) * 2020-01-29 2022-09-13 GE Precision Healthcare LLC Methods and systems for medical imaging vibration reduction
CN115989637A (zh) * 2020-09-03 2023-04-18 株式会社村田制作所 弹性波装置

Citations (4)

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Publication number Priority date Publication date Assignee Title
EP1100196A2 (en) * 1999-11-11 2001-05-16 Murata Manufacturing Co., Ltd. Piezoelectric Resonator
CN1574617A (zh) * 2003-06-18 2005-02-02 松下电器产业株式会社 电子部件及其制造方法
CN101278479A (zh) * 2005-09-30 2008-10-01 Nxp股份有限公司 薄膜体声波（baw）谐振器或相关改进
DE102008051244A1 (de) * 2007-10-12 2009-04-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Vorrichtung mit akustisch gekoppelten BAW-Resonatoren und Verfahren zum Abgleichen von Impedanzen

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JP3514222B2 (ja) * 1999-11-17 2004-03-31 株式会社村田製作所 圧電共振子、電子部品及び電子機器
US6385429B1 (en) 2000-11-21 2002-05-07 Xerox Corporation Resonator having a piezoceramic/polymer composite transducer
US20040027030A1 (en) * 2002-08-08 2004-02-12 Li-Peng Wang Manufacturing film bulk acoustic resonator filters
JP2005277454A (ja) * 2004-03-22 2005-10-06 Tdk Corp 圧電共振器およびそれを備えた電子部品
WO2007000929A1 (ja) 2005-06-29 2007-01-04 Matsushita Electric Industrial Co., Ltd. 圧電共振器、圧電フィルタ、それを用いた共用器及び通信機器
US7868522B2 (en) * 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
JP2007312164A (ja) 2006-05-19 2007-11-29 Hitachi Ltd 圧電薄膜共振器並びにそれを用いた高周波フィルタ及び高周波モジュール
WO2009011022A1 (ja) * 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
WO2010013197A2 (en) 2008-08-01 2010-02-04 Ecole polytechnique fédérale de Lausanne (EPFL) Piezoelectric resonator operating in thickness shear mode
US8513863B2 (en) * 2009-06-11 2013-08-20 Qualcomm Mems Technologies, Inc. Piezoelectric resonator with two layers
US20110001394A1 (en) 2009-07-02 2011-01-06 Eta Sa Piezoelectric thin-film tuning fork resonator
US8673121B2 (en) 2010-01-22 2014-03-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric materials with opposite C-axis orientations
US8659611B2 (en) * 2010-03-17 2014-02-25 Qualcomm Mems Technologies, Inc. System and method for frame buffer storage and retrieval in alternating orientations
FI124453B (fi) 2010-08-13 2014-09-15 Valtion Teknillinen Mikromekaaninen resonaattorijärjestelmä ja menetelmä sen valmistamiseksi
US9406865B2 (en) 2011-08-19 2016-08-02 Qualcomm Incorporated Composite piezoelectric laterally vibrating resonator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1100196A2 (en) * 1999-11-11 2001-05-16 Murata Manufacturing Co., Ltd. Piezoelectric Resonator
CN1574617A (zh) * 2003-06-18 2005-02-02 松下电器产业株式会社 电子部件及其制造方法
CN101278479A (zh) * 2005-09-30 2008-10-01 Nxp股份有限公司 薄膜体声波（baw）谐振器或相关改进
DE102008051244A1 (de) * 2007-10-12 2009-04-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Vorrichtung mit akustisch gekoppelten BAW-Resonatoren und Verfahren zum Abgleichen von Impedanzen

Also Published As

Publication number Publication date
JP6129978B2 (ja) 2017-05-17
KR20150077441A (ko) 2015-07-07
WO2014065939A1 (en) 2014-05-01
US9331666B2 (en) 2016-05-03
EP2909933A1 (en) 2015-08-26
JP2015537439A (ja) 2015-12-24
US20140111064A1 (en) 2014-04-24
KR101701330B1 (ko) 2017-02-01
CN104737449A (zh) 2015-06-24

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Effective date of registration: 20161024

Address after: American California

Applicant after: NUJIRA LTD.

Address before: American California

Applicant before: Qualcomm MEMS Technology Corp.

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171208

Termination date: 20190826