KR101678992B1 - Chemical-mechanical polishing equipment having a multi-head - Google Patents

Chemical-mechanical polishing equipment having a multi-head Download PDF

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Publication number
KR101678992B1
KR101678992B1 KR1020150140057A KR20150140057A KR101678992B1 KR 101678992 B1 KR101678992 B1 KR 101678992B1 KR 1020150140057 A KR1020150140057 A KR 1020150140057A KR 20150140057 A KR20150140057 A KR 20150140057A KR 101678992 B1 KR101678992 B1 KR 101678992B1
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South Korea
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polishing
wafer
head
high pressure
uniform
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KR1020150140057A
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Korean (ko)
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장희철
박선미
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금용전기 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a CMP apparatus having a multi-head, which comprises a multi-head CMP apparatus for directly applying a machining pressure to the backside of a wafer placed on a table, regardless of the size of the processed wafer (for example, SiC) A uniform ultra high pressure polishing apparatus for increasing the surface polishing rate by a uniform pressure direct control system having a head (Multi-Head); A temperature detection sensor for detecting the occurrence of frictional heat generated during polishing by the uniform ultra high pressure polishing apparatus in real time and sending data to the wafer surface roughness control apparatus; A cooling device for supplying coolant to the table to reduce frictional heat applied to the multi-head and the wafer of the uniform ultra-high pressure polishing apparatus by data sensed by the temperature detection sensor; An automatic slurry supply device for supplying an additive mixed with a band-band gap having a high reactivity to a wafer to a polishing slurry for suppressing heat generation during polishing by the uniform ultra-high pressure polishing device; High precision in the rotational speed by constructing the wafer surface roughness control device for the automatic supply control of the heat generation during the cooling water and the slurry according to the control and processing, 78.4 kPa (800g / cm 2 ) or more of ultra-high pressure conditions of the table of the CMP equipment Surface polishing is possible and there is a unique characteristic that the polishing efficiency can be greatly increased.

Description

[0001] The present invention relates to a CMP apparatus having a multi-head,

The present invention is chemical-mechanical polishing (CMP, Chemical Mechanical Polishing) through relates to the equipment, in particular the existing 300 ~ 400g / cm 2 low-load pressure method is uniform pressure directly controlled and not for grinding at a pressure condition of the system 78.4 kPa (CMP) apparatus having a multi-head capable of polishing even under an ultra-high pressure of 800 g / cm < 2 > or more.

In recent years, demand for wafer substrates such as SiC, GaN, and sapphire has been rapidly increasing due to explosive market expansion of optical devices such as LEDs and mobile phone liquid crystal components. Among them, the SiC wafer material has been rapidly increasing in demand as a typical electronic material having a wide band gap.

However, due to the extreme mechanical properties of SiC, which has hardness close to diamond, the cost and time consumed in the machining process are so high that the technical requirements are incomparable to other machining processes, and the machining cost This amounts to 60-70% of the actual product price. For this reason, it is not uncommon for companies worldwide to process SiC to the surface to raise the final epitaxial layer.

For this reason, development of extreme material processing technology is indispensable in Korea. As the requirement of semiconductor devices increases, the use of GaN used in optical devices as well as SiC is increasingly used, but mechanical or chemical processing is very difficult As a preemption for these technologies, urgent technology development is taking place in order to secure national competitiveness and to lay the foundations for the next generation semiconductor industry development.

Most of the CMP equipment currently developed is polishing the surface at a low pressure of 300 to 400 g / cm 2, which causes a considerable process cost such as consumables due to an increase in the entire process time (see FIG. 1).

In the case of CMP equipment with a low pressure under a commercial condition, when the surface is polished under an ultra-high pressure condition of 78.4 kPa (800 g / cm 2) or more, wax which fixes the wafer due to high frictional heat melts to detach the wafer or cause polishing unbalance, Is lowered.

Therefore, in order to solve the above-described problems, the present invention provides a completely new method for polishing a substrate by using an ultra-high pressure condition of 78.4 kPa (800 g / cm 2) or more to increase the polishing rate per unit time, CMP equipment.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a four-head surface grinder and a uniform pressure direct control system, / cm < 2 >) or more under high pressure conditions.

According to an aspect of the present invention, there is provided a chemical mechanical polishing (CMP) apparatus, comprising: a table formed of a dough tile cast material, A uniform pressure direct control system having a multi-head that directly applies the processing pressure to the backside of the wafer placed on the wafer surface by an air device at a rate of 78.4 kPa (800 g / cm 2 ) A uniform ultra high pressure polishing apparatus 100 for increasing a polishing rate; A temperature detection sensor 200 for detecting the occurrence of frictional heat occurring during polishing by the uniform ultra high pressure polishing apparatus in real time and sending data to the wafer surface roughness control apparatus; A cooling device 300 for supplying coolant to the table to reduce frictional heat applied to the multi-head and the wafer of the uniform ultra-high pressure polishing apparatus 100 by data sensed by the temperature detection sensor; And an automatic slurry feeding device (400) for feeding an additive mixed with a band band gap having reactivity with the wafer to a polishing slurry for suppressing heat generation during polishing by the uniform ultra high pressure polishing device; In addition, a control command is executed so that the data of the ROM 520 storing the reference value having the nano-level surface uniformity with respect to the surface roughness of the wafer and the data input by the user through the operation and monitoring monitor 600 can be selected If there is no user input, the detection information of the surface roughness sensor 510 is compared with the stored data of the ROM in advance, and if the user inputs the detection information, the detection information of the surface roughness sensor is inputted to the input And a wafer surface roughness control device 500 that automatically controls the rotation speed of the table 110 of the uniform ultra-high pressure polishing apparatus 100 and automatically supplies cooling water and slurry upon heat generation due to wafer polishing The CMP apparatus having a multi-head.

According to another embodiment of the present invention, the multi-head includes a 4-head part (4-A) which is driven under pressure by a 4-axis press air control for uniform polishing of the back surface of the wafer, A head unit 120 is provided.

According to another embodiment of the present invention, the 4-head unit 120 is formed into a honeycomb structure 121 so as to have a uniform fine pressure distribution.

According to another embodiment of the present invention, in order to maximize the cooling effect, the table 110 has twelve passages each having six cooling water supply passages and six cooling water discharge passages, (320).

The CMP apparatus having the multi-head of the present invention has the following effects.

(1) Unlike the conventional load pressurizing method in which the wafer is polished under a low pressure condition, the surface is polished by the uniform pressure direct control method under the ultra-high pressure condition, so that the wax to fix the wafer by the high frictional heat melts, The conventional problem that the shape precision of the wafer is lowered can be solved.

(2) Since the polishing rate is increased by a high-pressure condition of 78.4 kPa (800 g / cm 2) or more using a 4-head, the polishing rate per unit time is greatly increased, It is effective.

FIG. 1 is a schematic view of a CMP apparatus according to the prior art,
2 is a diagram illustrating the entire structure of a CMP apparatus having a multi-head according to a preferred embodiment of the present invention
3 is a view of a temperature sensor for a CMP apparatus having a multi-head according to a preferred embodiment of the present invention
4 is a view illustrating a honeycomb structure for a 4-head unit of a CMP apparatus having a multi-head according to a preferred embodiment of the present invention.
5 shows a cooling apparatus for a CMP apparatus having a multi-head according to a preferred embodiment of the present invention
6 is a block diagram illustrating a wafer surface roughness control apparatus for a CMP apparatus having a multi-head according to a preferred embodiment of the present invention

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements throughout. Although the same reference numerals are used in the different drawings, the same reference numerals are used throughout the drawings. The prior art should be interpreted by itself. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

2 to 7, the technical construction of a CMP (Chemical Mechanical Polishing) apparatus having a multi-head according to an embodiment of the present invention includes a uniform ultra-high pressure polishing apparatus 100, a temperature detection sensor 200 A cooling device 300, an automatic slurry feeding device 400, and a wafer surface roughness control device 500.

Referring to FIG. 2, the uniform ultra-high pressure apparatus 100 is a device for four-axis pressurized driving by air supplied from an external compressor. The uniform ultra-high pressure apparatus 100 includes a processing wafer (for example, SiC, GaN, Sapphire The wafer can be polished by a uniform pressure direct control system having a multi-head which directly applies the working pressure to the back surface of the wafer placed on the table 110 irrespective of the size of the wafer 110, The backside polishing rate of the wafer can be greatly increased as compared with the conventional CMP equipment.

2 and 3, the table 110 according to a preferred embodiment of the present invention includes a duck tile cast material made of a spheroidal graphite cast iron material to minimize the vibration of the table bed And is molded.

Here, the table 110 can be precisely ground by setting the plane runout of the table to 50 microns or less in order to have an ultra precise table structure, and can be formed into a honeycomb structure on the table plane in order to maintain rigidity of the table Scraping can also be used to maintain the flatness of the table.

In addition, the multi-head according to the preferred embodiment of the present invention includes a 4-head portion 4 (see FIG. 4) which is driven under pressure by 4-axis press air control for uniform polishing of the wafer back surface A read unit 120 is provided.

4, the multi-head is formed into a honeycomb structure 121 so that the 4-head unit 120 has a uniform fine pressure distribution .

Here, the 4-head unit 120 according to the embodiment of the present invention implements a multi-head completely different from the conventional method. That is, since the polishing head for polishing at a low pressure of 300-400 g / cm 2 is a load-controlled pressurizing system, the working load is determined when the magnitude of the load is divided by the area of the workpiece. Therefore, it is necessary to precisely control the magnitude of the load in order to control the machining pressure precisely and in a high range. However, it is difficult to precisely control the load on the workpieces having the sizes of 4 inches and 6 inches. Therefore, in order to polish the wafer, the honeycomb structure 121 of the 4-head unit 120, which is driven under pressure by the 4-axis press air control, The uniform pressure is directly applied to the back surface of the wafer so that the pressure can be directly applied to the back surface of the wafer. Thus, uniform pressure is applied irrespective of the size of the wafer, thereby uniformly polishing the back surface of the wafer.

The uniform ultra-high pressure polishing apparatus 100 according to the preferred embodiment of the present invention is polished by applying a pressure of 78.4 kPa (800 g / cm 2) to the back surface of the wafer.

This is because the conventional CMP equipment requires a large amount of processing cost such as consumables due to an increase in the entire process time by polishing the surface of the wafer under a low pressure condition of 300 to 400 g / cm < 2 > If the ultra-high pressure polishing apparatus 100 polishes a wafer by using an ultra-high pressure condition of 78.4 kPa (800 g / cm 2) or more, the polishing rate per unit time is greatly increased and the process cost is remarkably reduced. Further, when the conventional CMP equipment with a low pressure of 300 to 400 g / cm < 2 > is polished under the ultra-high pressure condition as in the embodiment of the present invention, the wax for fixing the wafer by the high frictional heat melts, Or a polishing imbalance may be generated, which may cause a problem in that the precision of the surface shape of the wafer is greatly lowered. However, the uniform ultra-high pressure polishing apparatus 100 according to an embodiment of the present invention may include a honeycomb structure 121 of a 4-head unit 120 driven by a 4-axis press air operation, The wafer is polished by a uniform pressure direct control system so that the processing pressure can be directly applied to the backside of the wafer, thereby preventing the wafer from causing any problems even if the wafer is polished under an ultrahigh pressure of 78.4 kPa (800 g / cm 2) or more .

Therefore, the ultra-high pressure polishing apparatus 100 according to the embodiment of the present invention is characterized in that the surface polishing rate of the wafer can be greatly increased by a uniform pressure direct control system for increasing the polishing rate of the wafer back surface .

Referring again to FIG. 3, the temperature detecting sensor 200 is a means for detecting the temperature generated by the frictional heat at the time of polishing the back surface of the wafer, and generates the frictional heat generated during polishing by the uniform ultra high pressure polishing apparatus 100 And sends data to the wafer surface roughness control device 500, which will be described later.

Referring to FIGS. 2 and 5, the cooling apparatus 300 may be configured to detect the temperature of the 4-head unit of the uniform ultra-high pressure polishing apparatus 100 based on data detected from the temperature detection sensor 200, (Or cooling water) to the table 110 in response to a command from the wafer surface roughness control device 500 to be described later to reduce the frictional heat applied to the wafer.

Referring to FIG. 5, the cooling device 300 is described in detail. In the conventional CMP equipment, the coolant supply passage at the center of the table is narrow, whereas the present invention is not limited to the coolant supply passage at the center of the table 110 So that the flow of the cooling water is smooth and the cooling efficiency is increased. Also, in the conventional CMP equipment, the cooling water of the cooling device is supplied and recovered at the center of the table, while the cooling water of the cooling device 300 of the present invention is designed to be supplied at the center of the table top and recovered to the bottom center of the table Therefore, the structural cooling water supply passage is wide enough and circulation is smooth. In the conventional CMP equipment, since the cooling water passage in the table is a simple shape, the cooling of the table is relatively uneven due to the irregularity of the flow due to the circulation of the cooling water. On the other hand, Is formed in the shape of a scroll (310) so that the coolant flow is uniform and the cross-sectional area of the coolant is less than that of the conventional 300 to 400 g / cm < 2 > So that the cooling on the table 110 is performed relatively uniformly. In the conventional CMP equipment, the cooling water is relatively uneven due to the irregular flow on the table divided into four quadrants from the center of the table. On the other hand, the present invention is characterized in that the cooling water flow is divided into six And the cooling water is supplied to the table, and the supplied cooling water is further uniformly maximized in cooling effect by forming the radiation grooves 320 that are recovered in six rows.

5, the cooling device 300 according to a preferred embodiment of the present invention is configured to form the table 110 into a scroll structure 310 in order to maximize the cooling effect, Twelve passages having six cooling water supply passages and six cooling water discharge passages are formed in the radial grooves 320 from the center of the table to the circumferential outer periphery. The scroll structure 310 refers to a structure in which the cooling method of the table 110 is formed into a spiral rotating flow structure. The cooling water uniformly distributes the sectional area distribution of the cooling water on the table by the spiral rotation flow, .

Therefore, the temperature detecting sensor 200 and the cooling device 300 according to the embodiment of the present invention are for improving the polishing rate, and the polishing conditions between the polishing slurry and the SiC as the material of the wafer are set to 0.2um / hr A band-gap additive having reactivity with SiC is used in the polishing slurry to improve the amount of polishing and to detect frictional heat in real time through the temperature detection sensor 200 and to control the temperature of the CMP equipment The application of the scroll structure of the cooling device has a unique characteristic.

Referring to FIG. 2 again, the slurry automatic feeder 400 is a means for suppressing heat generated during polishing. The uniform high-pressure polishing apparatus 100 is equipped with a polishing slurry (polishing slurry) ) Is supplied with a polishing slurry to the 4-head unit 120 and the wafer in response to a command from the wafer surface roughness control apparatus 500 to be described later .

Here, the polishing slurry is generally performed by a combination of the chemical action of the slurry composed of the chemical liquid and the abrasive particles and the mechanical action of the abrasive machine in the case of CMP. Therefore, the polishing slurry has various kinds depending on the kind and characteristics of the object to be removed. (SiO2), alumina (Al2O3), ceria (CeO2), diamond and the like having a particle diameter of 80 to 230 nm is suspended in an alkali solution such as KOH or NH4OH. As factors of the slurry for determining the removal rate (MRR) and surface quality of the insulating film and wiring layer, there are the size and distribution of the abrasive particles, the chemical characteristics, the colloidal stability, and the feed rate of the slurry. There are various kinds according to the manufacturer and the use, but they can be largely divided into slurry for oxide and metal. The slurry for the insulating film CMP equipment has a long development history and has its origin in the abrasive glass industry. In general, a silica-based slurry is used for polishing an insulating film such as TEOS, BPSG, and a thermal oxide film.

Therefore, since the polishing slurry supply method is very important since the wafer generates a lot of heat when polishing by high pressure, the slurry has a cooling effect as well as an abrasive. Therefore, the automatic slurry supply device 400 ) Can control the CMP equipment to be cooled to a certain temperature.

2 and 6, the wafer surface roughness control apparatus 500 is a means for controlling the chemical mechanical polishing (CMP) equipment, and controls the rotation speed of the table 110 with respect to the CMP equipment, The supply of the cooling water and the slurry is automatically controlled during the heating due to polishing.

In addition, the wafer surface roughness control apparatus 500 according to the preferred embodiment of the present invention may be configured such that the data of the ROM 520 storing the reference value having the nanosized surface uniformity with respect to the wafer surface roughness, ) Of the input data. If there is no input from the user through the operation and monitoring monitor 600, the sensing information of the surface roughness sensor 510 is preferentially compared with the stored data of the ROM 520, 100 to control the rotational speed of the table 110 and supply of cooling water and slurry automatically. When there is an input from the user through the operation and monitoring monitor 600, the sensing information of the surface roughness sensor 510 is preferentially compared with the input data of the operation and monitoring monitor 600, The control of the rotational speed of the table 110 of the pressure polishing apparatus 100 and the supply of the cooling water and the slurry are controlled automatically.

Here, the wafer surface roughness control apparatus 500 may include a nano-level surface uniformity that can measure the entire polishing surface stored in the ROM 520, rather than a simple profiler form, The control of the rotation speed of the table 110 of the uniform ultra-high pressure polishing apparatus 100 and the supply of the cooling water and the slurry are automatically controlled. In addition, accurate polishing data acquisition and analysis is possible through real-time comparison with the workpiece through the operation and monitoring monitor 600.

In other words, in the present invention, the degree of surface roughness of the wafer during polishing of the wafer may be determined by measuring the information inputted from the surface roughness sensor 510 so that the wafer surface roughness control apparatus 500 can measure the entire polishing surface stored in the ROM 520 And the surface roughness reference value inputted by the user through the operation and monitoring monitor 600 is compared with a reference value selected from a reference value and a table of the uniform ultra high pressure polishing apparatus 100 110) rotation speed control, supply of cooling water and slurry is automatically performed and transmitted to the operation and monitoring monitor apparatus 600, so that the operator can directly confirm the polishing state of the wafer.

Therefore, in the present invention, the reliability of the wafer polishing using the CMP equipment can be further improved through the wafer surface roughness control device 500.

In addition, by controlling the table rotation speed of the CMP equipment, adjusting the slurry particle environment, and controlling the processing environment according to the heat cooling adjustment according to the processing, the productivity of the wafer is increased to 78.4 kPa (800 g / cm 2 ) And the polishing rate of sapphire wafers is now more than 2um (6in standard) at 1um per hour. The polishing uniformity obtained under ultrahigh pressure can be reduced to 10% or less, and the surface roughness value after polishing can be maintained at 1.0 nm or more.

According to a preferred embodiment of the present invention, the CMP apparatus may be configured to detect a failure of the uniform ultra-high pressure polishing apparatus (100) from an information of a plurality of failure detection sensors (not shown) installed on the polishing apparatus, And a main air shutoff device (not shown) for immediately shutting off the air supplied through the supply device to immediately stop the operation of the CMP equipment.

Therefore, the CMP apparatus having the multi-head according to the embodiment of the present invention is characterized in that the safety of the operator can be ensured even if the wafer is polished by using ultra high pressure condition of 78.4 kPa (800 g / cm 2 ) or more.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: uniform ultra high pressure polishing apparatus 110: table
120: 4-head part 121: honeycomb structure
200: Temperature detection sensor
300: cooling device
310: Scroll structure 320: Radiation groove
400: Slurry automatic feeder
500: Wafer surface roughness control device
510: Surface roughness sensor 520: ROM
600: Operation and Surveillance Monitor

Claims (8)

In chemical-mechanical polishing (CMP) equipment,
The apparatus is capable of directly applying the working pressure to the backside of the wafer placed on the table 110 formed of the dirt tile cast material by the air apparatus at 78.4 kPa (800 g / cm 2 ) regardless of the size of the processed wafer A uniform ultra-high pressure polishing apparatus 100 for increasing the surface polishing rate of a processed wafer by a uniform pressure direct control system having a multi-head;
A temperature detection sensor 200 for detecting the occurrence of frictional heat occurring during polishing by the uniform ultra high pressure polishing apparatus in real time and sending data to the wafer surface roughness control apparatus;
A cooling device 300 for supplying coolant to the table to reduce frictional heat applied to the multi-head and the wafer of the uniform ultra-high pressure polishing apparatus 100 by data sensed by the temperature detection sensor;
And an automatic slurry feeding device (400) for feeding an additive mixed with a band band gap having reactivity with the wafer to a polishing slurry for suppressing heat generation during polishing by the uniform ultra high pressure polishing device;
In addition, a control command is executed so that the data of the ROM 520 storing the reference value having the nano-level surface uniformity with respect to the surface roughness of the wafer and the data input by the user through the operation and monitoring monitor 600 can be selected ,
If there is no user input, the detection information of the surface roughness sensor 510 is preferentially compared with the stored data of the ROM,
And when there is a user input, comparing the detection information of the surface roughness sensor with the input data of the operation and monitoring monitor,
And a wafer surface roughness control device 500 for automatically supplying the cooling water and slurry during the control of the rotation speed of the table 110 of the uniform ultra high pressure polishing apparatus 100 and the heating due to wafer polishing. CMP equipment.
delete The method according to claim 1,
The multi-head is provided with a 4-head unit (120) which is pressurized and driven by a 4-axis press air control for uniform polishing of the back surface of the wafer CMP equipment having multi-heads.
The method of claim 3,
Head unit (120)) is formed into a honeycomb structure (121) so as to have a uniform fine pressure distribution.
delete The method according to claim 1,
In order to maximize the cooling effect, the table 110 is characterized in that all twelve passages having six cooling water supply passages and six cooling water discharge passages are formed in the radial grooves 320 in the circumference circumference at the center of the table CMP equipment with multi-head. delete delete
KR1020150140057A 2015-10-06 2015-10-06 Chemical-mechanical polishing equipment having a multi-head KR101678992B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007015107A (en) * 1995-04-26 2007-01-25 Fujitsu Ltd Polishing apparatus and polishing method
JP2007067166A (en) * 2005-08-31 2007-03-15 Matsushita Electric Ind Co Ltd Chemomechanical polishing method of sic substrate
JP2010194692A (en) * 2009-02-26 2010-09-09 Epson Toyocom Corp Surface plate and polishing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007015107A (en) * 1995-04-26 2007-01-25 Fujitsu Ltd Polishing apparatus and polishing method
JP2007067166A (en) * 2005-08-31 2007-03-15 Matsushita Electric Ind Co Ltd Chemomechanical polishing method of sic substrate
JP2010194692A (en) * 2009-02-26 2010-09-09 Epson Toyocom Corp Surface plate and polishing device

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