KR101674547B1 - Sputtering apparatus which can decrease the damage of substrate and Optical screen for use in the same - Google Patents

Sputtering apparatus which can decrease the damage of substrate and Optical screen for use in the same Download PDF

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Publication number
KR101674547B1
KR101674547B1 KR1020150054399A KR20150054399A KR101674547B1 KR 101674547 B1 KR101674547 B1 KR 101674547B1 KR 1020150054399 A KR1020150054399 A KR 1020150054399A KR 20150054399 A KR20150054399 A KR 20150054399A KR 101674547 B1 KR101674547 B1 KR 101674547B1
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KR
South Korea
Prior art keywords
light shielding
shielding
light
sputtering apparatus
substrate
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KR1020150054399A
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Korean (ko)
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KR20160123785A (en
Inventor
백주열
김부경
최상대
박성기
안경준
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(주)에스엔텍
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    • H01L51/0008—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H01L51/56—

Abstract

The sputtering apparatus of the present invention is provided with the optical shielding means 100 so as to be positioned between the target 11 and the substrate 21 and the optical shielding means 100 includes a plurality of shading pieces 31 obliquely inclined in parallel The clearance between the shielding pieces 31 serves as a passage for the deposition particles P and the shielding piece 31 serves as a shield for the plasma light L. [ According to the present invention, since the plasma light L is obscured by the optical shielding means 100 and the mean free path of the deposition particles P is reduced, the optical component L of the plasma and the deposition of the linear high- It is possible to prevent the substrate 21 from being damaged by the particles P. Such prevention of substrate damage means that the underlying thin film (e.g., an organic light emitting layer) already formed before sputtering deposition is prevented from being damaged, so that the lifetime and reliability of the device are greatly increased.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus capable of reducing damage to a substrate,

The present invention relates to a sputtering apparatus and an optical shielding means used therefor, and more particularly to a sputtering apparatus and an optical shielding means used therein, in particular to prevent optical components of a plasma from reaching a substrate and to reduce an average free path of deposited particles, To a sputtering apparatus capable of preventing a substrate from being damaged by particles of linear high-energy evaporation, and an optical shielding means used therefor.

In the case of the organic light emitting device, an electrode layer is formed on the organic light emitting layer (OLED) by a sputtering method. In this process, the lower organic light emitting layer is damaged due to the optical components of the high energy deposition particles and the plasma. A reduction in the lifetime and reliability of the device and a problem of defects such as a dark spot have been pointed out.

In order to solve this problem, a thermal evaporation method may be employed in which the kinetic energy of the deposited particles is smaller than that of the sputtering method and there is no optical element such as a plasma or UV, thereby reducing the damage of the substrate. Since the thermal evaporation method uses a source in the form of a point source, there is a disadvantage in that the characteristics of the thin film are not uniform at the time of large-area deposition, and the source and the source are provided with a heat source so as not to subject the substrate to thermal damage Since the gap between the substrates must be secured to some extent, the space occupied by the equipment must be large, which is not desirable as an ultimate solution.

As another solution, a method of forming a protective layer for protecting the organic light emitting layer before forming the electrode layer is disclosed in Korean Patent Publication No. 2000-62301 (published on October 25, 2000), Korean Patent Laid-Open Publication No. 2014-48796 (Published Apr. 24, 2014), but this has been achieved only through improvement of the structure and manufacturing method of the device, not through improvement of the sputtering device itself.

As described above, when a thin film is deposited through a sputtering apparatus in various fields such as an organic light emitting display as well as other flat panel displays or solar cells, there is a problem that the substrate is damaged by high energy deposition particles and optical components of the plasma However, interest in improving the structure and manufacturing method of the device was solved in order to solve this problem, but it was not interested in improving the sputtering device itself.

Korean Patent Publication No. 2000-62301 (published on October 25, 2000) Korean Patent Laid-Open Publication No. 2014-48796 (published April 24, 2014)

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a plasma processing apparatus capable of preventing an optical component of a plasma from reaching a substrate and reducing the average free stroke of the deposition particles, whereby the substrate is damaged by the plasma optical component and the linear high- And an optical shielding means used in the sputtering apparatus.

In order to achieve the above object, the sputtering apparatus according to the present invention is characterized in that optical shielding means is provided so as to be positioned between a target and a substrate, and a plurality of light shielding pieces obliquely inclined are provided in parallel, And a gap between the shielding pieces serves as a passage for the deposited particles, and the shielding piece serves as a shield for the plasma light.

Preferably, the optical shielding means is fastened to a target holder for supporting the target. This is more preferable when a magnet is installed in the target holder so that magnetron sputtering is performed.

The light shield may be made of a metal material so that a bias can be applied to the light shield. In this case, it is preferable that the metal is anti-reflection treated so that the plasma light is reflected by the shielding piece and is prevented from escaping toward the substrate through the gap between the shielding pieces.

 Preferably, the optical shielding means has a multilayer structure in which a plurality of light shielding plates are laminated. In this case, the light shielding pieces are provided on each of the light shielding plates.

The light shielding plates may be disposed to be inclined in opposite directions to adjacent light shielding plates among the plurality of light shielding plates.

According to an aspect of the present invention,

A light-shielding plate having a plurality of diagonally shaded light-shielding pieces arranged in parallel;

A shielding plate housing installed at both ends of the shielding plate so that the shielding plate is held between the both ends; And

A holder fastening means installed on the shield plate housing so that the shield plate housing can be fastened to a target holder of the sputtering apparatus; And at least one shielding plate is installed in the shielding plate housing.

At this time, when a plurality of the light shielding plates are stacked to form a multi-layer structure, it is preferable that the light shielding plates are provided so as to be inclined in opposite directions with respect to an adjacent light shielding plate among the plurality of light shielding plates.

According to the present invention, since the plasma light is obscured by the optical shielding means and the mean free path of the deposited particles is reduced, it is possible to prevent the substrate from being damaged by the deposited particles of the plasma optical component and the linear high- do. Such prevention of substrate damage means that the underlying thin film (e.g., an organic light emitting layer) already formed before sputtering deposition is prevented from being damaged, so that the lifetime and reliability of the device are greatly increased.

1 is a view for explaining a sputtering apparatus according to the present invention;
FIGS. 2 to 4 are views for explaining the optical shielding means 100 according to the first embodiment of the present invention; FIG.
5 is a view for explaining an optical shielding means 100 according to a second embodiment of the present invention;
6 is a view for explaining a specific configuration of the optical shielding means 100 according to the present invention;
7 is a view for explaining a sputtering apparatus provided with the optical shielding means 100 of FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are merely provided to understand the contents of the present invention, and those skilled in the art will be able to make many modifications within the technical scope of the present invention. Therefore, the scope of the present invention should not be construed as being limited to these embodiments.

1 is a view for explaining a sputtering apparatus according to the present invention, and a known component having no significant meaning in the present invention, such as a gas inlet, a gas outlet, an RF source, etc., is omitted.

1, a target holder 10 and a substrate support 20 for installing a target 11 and a substrate 21 are provided in a chamber 1, and a target holder 10, A plasma 2 is formed between the substrate 2 and the substrate support 20.

When the Ar plasma is used, Ar + ions hit the target 11, whereby the target 11 material is released and the deposition is carried out as the deposition particles P toward the substrate 21. At this time, since the deposition particles P have linearity and high kinetic energy, the substrate 21 is damaged in the process of depositing the deposition particles P on the substrate.

In the case of an organic light emitting device, for example, an organic light emitting layer is first formed and then an electrode layer of Al or ITO is formed thereon by a sputtering method. In this process, the organic light emitting layer is damaged, .

The substrate 21 is affected not only by the kinetic energy of the deposition particles P but also by the optical component of the plasma, that is, the plasma light. Particularly, since the organic luminescent layer is susceptible to such plasma light, .

The present invention provides an optical shielding means 100 between the target holder 10 and the substrate support 20 so as to prevent the optical components of the plasma from reaching the substrate 21 and reduce the kinetic energy of the deposited particles P. [ ) Is installed.

2 to 4 are views for explaining the optical shielding means 100 according to the first embodiment of the present invention. 2 to 4, the optical shielding unit 100 according to the present invention is characterized in that a plurality of obliquely inclined shielding pieces 31 are installed in parallel. A gap between the shielding pieces 31 serves as a passage for the deposition particles P and the shielding piece 31 serves as a shield for the plasma light L. [

2 shows a case in which the ends of the shielding pieces 31 are inclined to the same level (dotted line) when viewed from the side of the target 21 on the side of the substrate 21. In FIG. 3, (Θ1> θ2). In FIG. 4, when the light shielding piece 31 is installed so as to be more upright in the longitudinal direction than the case of FIG. 2 (θ1 <θ3) Lt; / RTI &gt;

As shown in FIG. 2, when the shielding piece 31 is inclined by? 1 such that neighboring ends of the shielding pieces 31 are located on the same line when the target 21 is viewed from the substrate 21 , It is possible to obtain both the effect that the average free path is reduced due to the collision of the evaporation particles P with the light shielding piece 31 and the light shielding effect of the plasma light L.

3, when the light shielding pieces 31 are laid too close to each other and the ends of the light shielding pieces 31 are overlapped with each other and are obscured when the target 21 is viewed from the substrate 21, The kinetic energy of the deposition particles P may be reduced too much.

As shown in Fig. 4, when the shielding piece 31 is set in the longitudinal direction too far and there is a gap between the shielding pieces 31 when the target 21 is viewed from the substrate 21, The substrate 21 is exposed to the plasma light L and the effect of reducing the kinetic energy of the deposition particles P is also lessened.

The inclination of the shading piece 31 will be appropriately selected according to the target pursued by the process. However, in view of the above-described point, the case of FIG. 2 or 3 is preferable to the case of FIG.

2 and 3, the plasma light L is reflected by the shielding piece 31 and passes through the gap between the shielding pieces 31 to form the substrate 21, It is preferable that the surface of the shading piece 31 is made of a material that does not reflect plasma light.

For example, if a bias needs to be applied to the shield 31 according to the pursuit of the process, the shield 31 must be made of a metal material. In this case, L, it is preferable that the surface is subjected to non-reflecting treatment, for example, blackening treatment so as to have a dark color of the black color system.

5 is a view for explaining the optical shielding means 100 according to the second embodiment of the present invention. When the optical shielding means 100 of the first embodiment has a single-layer structure, the optical shielding means 100 according to the second embodiment is characterized in that it has a multilayer structure in which a plurality of shielding plates 101 are laminated. At this time, a plurality of light shielding pieces 31 obliquely inclined as in the case of the first embodiment are provided in parallel on each of the plurality of light shielding plates 101.

Here, the term &quot; lamination &quot; means not only a plurality of shading plates 101 contacting with each other but also a multi-layered structure.

In the case of such a multi-layer structure, it is preferable that the light shielding pieces 31 are provided so as to be inclined in mutually opposite directions with respect to the adjacent light shielding plates 101. 4, the plasma light L may be blocked by the other shading plate 101 adjacent to the shielding plate 101 and the plasma light L may be blocked by the shielding plate 101 adjacent to the shielding plate 101, In the process of passing through the plurality of shading plates 101, the average free stroke is shortened and the kinetic energy will be sufficiently reduced as desired.

The blocking effect of the plasma light L will be more excellent if the shielding pieces 31 are arranged to be shifted with respect to the adjacent shielding plate 101. 5A shows a case where the light shielding pieces 31 are arranged on the same line with respect to the adjacent light shielding plate 101 and FIG. 5B shows a case where the light shielding pieces 31 are arranged shifted with respect to the adjacent light shielding plate 101 will be.

FIG. 6 is a view for explaining a specific configuration of the optical shielding means 100 according to the present invention, and FIG. 7 is for explaining a sputtering apparatus provided with the optical shielding means 100 of FIG. Although the features of the present invention tend to be exaggerated for clarity, the scope of the present invention should not be construed as limiting the scope of the present invention.

6 and 7, the optical shielding means 100 according to the present invention includes a light shielding plate 101, a light shielding plate housing 102, and a holder securing means 103. As shown in FIG.

The shield plate housing 102 is opened at both ends and is received between the both ends such that the shield plate 101 is laid down. It is preferable that a flange 33 is provided on the side of the shielding plate 101 so that the shielding plate 101 is fixed to the shielding plate housing 102 so that the shielding plate 101 is fixed to the inside of the shielding plate housing 102 Do.

 A plurality of light shielding pieces (31) obliquely inclined are provided in parallel in the light shielding plate (101). A plurality of the light shielding plates 101 may be laminated to form a multi-layered structure. In this case, as described above, the light shielding plates 31 are preferably provided to be inclined in opposite directions with respect to the adjacent light shielding plates 101.

It is preferable that the light shield plate support base 32 is provided so as to cross the light shield plate 31 so that the light shield plate 31 is supported by the light shield plate 101. [ It is preferable that the shielding piece 31 is provided so that the inclination thereof can be changed. For example, if the light shield support 32 is configured to slide laterally, the inclination of the light shield 31 may vary.

 The shielding plate housing 102 will be installed so that one end of the shielding plate 102 faces the target 11 and the other open end of the shielding plate housing 102 faces the substrate 21. The holder securing means 103 prevents the shielding plate housing 102 And is installed in the shield plate housing 102 so as to be fastened to the target holder 10. [

The holder fastening means 103 is installed on one end of the open end of the shield plate housing 102 in a ring shape and is fastened to the target holder 10 so that the target 11 is exposed toward the shield plate 101 through the ring- .

In the case of the so-called magnetron sputtering in which the plasma density is high around the target 11 by providing the magnets 12 in the target holder 10 in order to maximize the efficiency of the plasma, As shown in FIG. With this in mind, it is preferable that the optical shielding means 100 is fastened to the target holder 10.

Another desirable reason for the optical shielding means 100 to be located on the side of the target holder 10 is that the deposition particles P falling off the target 11 are scattered on the target 11 The size of the optical shielding means 100 can be minimized by reducing the kinetic energy in the vicinity of the target 11 so that the target 11 can be moved around the target 11 regardless of the shape of the target 11, This is easy to cover.

As described above, according to the present invention, the plasma light L is obscured by the optical shielding means 100 and the average free stroke of the deposited particles P is reduced. Therefore, the optical components of the plasma and the linear high- It is possible to prevent the substrate from being damaged by the deposited particles.

Such prevention of substrate damage means that the underlying thin film (e.g., an organic light emitting layer) already formed before sputtering deposition is prevented from being damaged, so that the lifetime and reliability of the device are greatly increased.

1: chamber 2: plasma
10: target holder 11: target
12: magnet 21: substrate
20: substrate support 31: shielding plate
32: Shade support 33: Flange
100: Optical shielding means 101: Shading plate
102: Shading plate housing 103: Holder fastening means
P: deposited particles L: plasma light

Claims (9)

An optical shielding means is provided so as to be positioned between the target and the substrate,
A shielding plate housing having a width larger than that of a target holder on which the target is installed and having an upper end and a lower end opened to form a tubular shape;
A light shielding plate having a plurality of light shielding pieces obliquely inclined in the light shielding plate housing in parallel; And
A holder fastening means for fastening the upper end of the shield plate housing and the target holder to each other and forming a ring shape so as to cover a space between the target holder and the upper end of the shield plate housing; Wherein the sputtering apparatus comprises a sputtering apparatus. delete The sputtering apparatus according to claim 1, wherein a magnet is installed in the target holder so that magnetron sputtering is performed. The sputtering apparatus according to claim 1, wherein the light shielding element is made of a metal so that a bias can be applied to the light shielding element. The sputtering apparatus according to claim 4, wherein the metal is non-reflection-treated so that plasma light is reflected by the light-shielding piece and is prevented from escaping toward the substrate through a gap between the light-shielding pieces. The sputtering apparatus according to claim 1, wherein the optical shielding means has a multilayer structure in which a plurality of light shielding plates are stacked, and the light shielding pieces are provided on each of the light shielding plates. 7. The sputtering apparatus according to claim 6, wherein the light shielding plates are provided so as to be inclined in mutually opposite directions with respect to an adjacent light shielding plate among the plurality of light shielding plates. A shielding plate housing having a width larger than that of the target holder of the sputtering apparatus and having a top end and a bottom end opened to form a tubular shape;
A light shielding plate having a plurality of light shielding pieces obliquely inclined in the light shielding plate housing in parallel;
A holder fastening means for fastening the upper end of the shield plate housing and the target holder to each other and forming a ring shape so as to cover a space between the target holder and the upper end of the shield plate housing; Wherein the optical shielding means comprises: The optical shielding unit according to claim 8, wherein a plurality of the light shielding plates are stacked to form a multi-layer structure, and the light shielding plates are provided so as to be inclined in mutually opposite directions with respect to an adjacent light shielding plate among the plurality of light shielding plates.
KR1020150054399A 2015-04-17 2015-04-17 Sputtering apparatus which can decrease the damage of substrate and Optical screen for use in the same KR101674547B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777606B2 (en) 2017-08-08 2020-09-15 Samsung Electronics Co., Ltd. Semiconductor memory device and semiconductor memory manufacturing apparatus

Citations (1)

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Publication number Priority date Publication date Assignee Title
KR100716258B1 (en) 2006-06-29 2007-05-08 한국기초과학지원연구원 Apparatus and method for generating solid element neutral particle beam

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Publication number Priority date Publication date Assignee Title
KR20000062301A (en) 1996-12-23 2000-10-25 엘렌 제이. 시니스갈리 An organic light emitting device containing a protection layer
KR20120111193A (en) * 2011-03-31 2012-10-10 주성엔지니어링(주) Sputtering apparatus and method for forming thin film using the same
KR101775388B1 (en) * 2011-04-06 2017-09-08 주성엔지니어링(주) Sputtering apparatus and method for forming thin film using the same
JP2014082024A (en) 2012-10-12 2014-05-08 Samsung Electronics Co Ltd Organic light emitting element and method for manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100716258B1 (en) 2006-06-29 2007-05-08 한국기초과학지원연구원 Apparatus and method for generating solid element neutral particle beam

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10777606B2 (en) 2017-08-08 2020-09-15 Samsung Electronics Co., Ltd. Semiconductor memory device and semiconductor memory manufacturing apparatus
US11444122B2 (en) 2017-08-08 2022-09-13 Samsung Electronics Co., Ltd. Semiconductor memory device and semiconductor memory manufacturing apparatus

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