KR101673483B1 - Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method - Google Patents

Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method Download PDF

Info

Publication number
KR101673483B1
KR101673483B1 KR1020150112453A KR20150112453A KR101673483B1 KR 101673483 B1 KR101673483 B1 KR 101673483B1 KR 1020150112453 A KR1020150112453 A KR 1020150112453A KR 20150112453 A KR20150112453 A KR 20150112453A KR 101673483 B1 KR101673483 B1 KR 101673483B1
Authority
KR
South Korea
Prior art keywords
insulating layer
transparent electrode
sapphire substrate
electrode pattern
hollow silica
Prior art date
Application number
KR1020150112453A
Other languages
Korean (ko)
Inventor
이희춘
최이식
문성환
장계원
나복기
Original Assignee
주식회사 사파이어테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 사파이어테크놀로지 filed Critical 주식회사 사파이어테크놀로지
Priority to KR1020150112453A priority Critical patent/KR101673483B1/en
Application granted granted Critical
Publication of KR101673483B1 publication Critical patent/KR101673483B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Position Input By Displaying (AREA)

Abstract

The present invention relates to a touch panel using a sapphire substrate having a hollow silica insulating layer using a sapphire substrate as a window, and a manufacturing method thereof. The touch panel of the present invention includes: a sapphire substrate used as a window; a first transparent electrode pattern formed on the sapphire substrate; an insulating layer including hollow silica on the sapphire substrate having a first transparent electrode pattern formed thereon; and a second transparent electrode pattern formed on the insulating layer. As a result, it is possible to prevent a short circuit at the intersection of the first and second transparent electrode patterns, to reduce defects, to increase the product yield, to ensure visibility, and to obtain a touch panel with improved light transmittance and insulation properties.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a touch panel using a sapphire substrate having a hollow silica insulating layer and a method of manufacturing the touch panel using a sapphire substrate having a hollow silica insulating layer,

The present invention relates to a touch panel using a sapphire substrate as a window and a manufacturing method thereof.

Capacitive type touch panels can be classified into film laminate type, glass laminate type, window integral type, and display integrated type depending on the structure thereof.

However, most of the conventional touch panels have a multi-layer structure in which a transparent electrode (ITO), an optical adhesive (OCA or OCR), a film and the like are superimposed on each other, resulting in deterioration of optical characteristics and high possibility of occurrence of defects in complicated processes.

Corning's gorilla glasses, which have improved light transmittance and strength by exchanging sodium ions and reinforcing heat treatment on the basis of soda lime, are widely used as windows for touch panels used in mobile devices. However, the gorilla glass also has a problem that the surface hardness is low and scratches are generated on the surface thereof and the product is very unstable because of its very low impact. In addition, when the ITO thin film is deposited by sputtering on the existing tempered gorilla glass, the deposition time is long during the low temperature deposition, which lowers the productivity and lowers the strength at the time of high temperature deposition.

On the other hand, the window-integrated touch panel is a one-piece structure in which electrodes are directly formed on one reinforced cover glass without a separate sensor layer. A conventional window touch panel is described in Korean Patent Laid-Open No. 10-2012-0055235 with reference to FIG.

The conventional window touch panel includes a first sensing cell 2 and a first sensing cell 2 formed along a first direction (X-axis direction) on a display region 1 for displaying an image and detecting a touch position, A second sensing cell 4 formed along the second direction (Y-axis direction), and a second sensing cell 4 connected along the second direction 2 connecting lines 5 are provided. The first sensing cell 2 and the second sensing cell 4 are arranged alternately with each other. The first connection line 3 and the second connection line 5 intersect with each other. An insulating film (not shown) Respectively.

In order to manufacture such a touch panel, it has been necessary to perform a bridge type insulating film forming process for insulating the intersections of the connection lines. In order to form the bridge-type insulating film, an insulating layer was deposited on the entire substrate, and a pattern of the bridge-type pattern was formed so that the deposited insulating layer corresponds to the intersection of the connecting lines.

Therefore, not only the production efficiency is lowered due to the complicated process of forming the insulating film, the manufacturing time is long, the cost is increased, and the bridge type insulating film is patterned with a small size. Therefore, short- And this leads to a failure of the touch panel, resulting in a decrease in product yield.

In addition, the bridge type insulating film has a disadvantage in that visibility is deteriorated due to a large refractive index difference depending on the position, because the insulating film of the bridge type is formed on the display region only at the intersection portions of the first and second connection lines.

In order to solve the problems of the background art described above, the present invention provides a touch panel using a sapphire substrate having a hollow silica insulating layer capable of preventing a short circuit at an intersection of first and second connection lines have.

Another object of the present invention is to provide a touch panel using a sapphire substrate having a hollow silica insulating layer having improved visibility at the intersections of first and second connection lines.

Another object of the present invention is to provide a method of manufacturing a touch panel using a sapphire substrate having a simple hollow silica insulating layer.

A touch panel using a sapphire substrate having a hollow silica insulating layer according to the present invention for solving the above-mentioned problems includes a sapphire substrate used as a window; A first transparent electrode pattern formed on the sapphire substrate; An insulating layer including a hollow silica on a sapphire substrate on which the first transparent electrode pattern is formed; And a second transparent electrode pattern formed on the insulating layer; .

Preferably, the thickness of the insulating layer is 120 nm to 200 nm.

Preferably, the insulating layer comprises the hollow silica and polyimide. At this time, the thickness of the insulating layer is 1 mu m to 3 mu m.

Preferably, the insulating layer is formed by laminating a first insulating layer made of hollow silica and a second insulating layer made of polyimide. In this case, the thickness of the first insulating layer is 90 nm to 170 nm, and the thickness of the second insulating layer is 1.6 to 2.0 μm.

According to another aspect of the present invention, there is provided a method of manufacturing a touch panel using a sapphire substrate having a hollow silica insulating layer, the method including: forming a first transparent electrode pattern on a sapphire substrate used as a window; Forming a dielectric layer by applying a coating liquid including hollow silica on a sapphire substrate having the first transparent electrode pattern formed thereon; And forming a second transparent electrode pattern on the insulating layer. .

Preferably, the step of forming the insulating layer comprises coating the hollow silica powder with a sol-gel process.

Preferably, the hollow silica powder has an average diameter of 65 nm to 100 nm.

Preferably, the hollow silica for the coating liquid is 1 wt% to 10 wt%.

Preferably, the coating liquid includes a hollow silica powder and a polyimide. At this time, the hollow silica is 1 wt% to 10 wt% and the polyimide is 1 wt% to 3 wt% with respect to the coating solution.

According to the touch panel of the present invention, the insulating layer is entirely coated on the substrate on which the first transparent electrode pattern is formed, and then the second transparent electrode pattern is formed, thereby preventing a short circuit at the intersection of the first and second transparent electrode patterns, It is possible to reduce the defects and increase the product yield and ensure the visibility.

Further, in the present invention, the insulating layer includes hollow silica, thereby obtaining a touch panel having improved light transmittance, electrostatic discharge, and insulation characteristics.

In addition, according to the touch panel manufacturing method of the present invention, the insulating layer is formed over the entire substrate without performing the patterning step in the insulating layer forming step, thereby simplifying the process steps and improving the production efficiency.

1 is a plan view of a conventional touch panel.
2 is a cross-sectional view illustrating a touch panel according to a first embodiment of the present invention;
3 is a sectional view showing a state for measuring a capacitance of a glass.
4 is a cross-sectional view illustrating a touch panel according to a second embodiment of the present invention.
5 is a sectional view of a touch panel according to a third embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Also, the terms "upper", "upper", "lower" and "lower" used as terms describing the positional relationship between components in the present specification exclude that a third component may be interposed therebetween no.

2, the touch panel of the present invention comprises a sapphire substrate 10, a first transparent electrode pattern 20, an insulating layer 30, and a second transparent electrode pattern 40.

The sapphire substrate 10 is used as a window, and has a higher strength than a glass used in the prior art, preventing scratches on the surface and being resistant to impact.

The first transparent electrode pattern 20 is formed on the sapphire substrate 10. Here, the first transparent electrode pattern 20 may be formed of a transparent electrode (ITO) formed along the first direction.

The insulating layer 30 is formed on the entire upper surface of the sapphire substrate 10 on which the first transparent electrode pattern 20 is formed. The insulating layer 30 is formed by applying a coating liquid including hollow silica, and insulates the first and second transparent electrode patterns 20 and 40 from each other. Accordingly, since the insulating layer 30 is entirely coated on the substrate 10 on which the first transparent electrode pattern 20 is formed, a short circuit between the first and second transparent electrode patterns 20 and 40 is prevented, And the insulating layer is uniformly formed over the entire substrate, thereby improving the visibility.

A second transparent electrode pattern (40) is formed on the insulating layer (30). Here, the second transparent electrode pattern 40 may be a transparent electrode (ITO) formed along the second direction.

The above-described first and second directions may be the X-axis direction and the Y-axis direction on the substrate.

Hereinafter, the touch panel insulation layer according to the present invention can be divided into the first to third embodiments according to the structure and characteristics thereof, and the constituent elements of the embodiments are basically the same, but there are differences in some configurations. In addition, among the various embodiments of the present invention, the same reference numerals in the drawings are used for the same functional elements and functions.

1. First Embodiment

The insulating layer of the touch panel according to the first embodiment of the present invention is made of hollow silica.

The insulating layer 30 is formed by mixing a hollow silica powder with a dispersion medium and coating it by a sol-gel process. The coating liquid is prepared by adding a dispersant to a dispersion liquid obtained by mixing a hollow silica powder and a dispersion medium. In this case, ethanol is used as the dispersion medium, and commercially available products of BYK can be used as the dispersion medium, but the types of the dispersion medium and the dispersant are not limited thereto.

At this time, the mixing ratio of the dispersing agent and the dispersion liquid is preferably 1: 100 to 1000. The weight ratio of the hollow silica to the coating liquid is preferably 1 wt% to 3 wt%. If the content of the hollow silica is less than 1 wt%, a short circuit occurs in the insulating layer 30 due to electric current, thereby causing breakdown of the insulation. Conversely, when the amount of the hollow silica exceeds 3 wt%, the thickness of the insulating layer 30 to be coated becomes thick, Is lowered.

On the other hand, the average particle size of the hollow silica powder contained in the coating liquid used is preferably 65 nm to 100 nm. When the average particle diameter of the hollow silica is less than 65 nm, the light transmittance is lowered. On the other hand, the hollow silica having an average particle diameter exceeding 100 nm has a complicated production method and a high manufacturing cost.

Examples of the method of applying the coating liquid to form the insulating layer on the sapphire substrate having the first transparent electrode pattern 20 include spin coating, bar coating and dip coating, .

Hereinafter, the dip coating process among various coating methods will be described in detail. When the dip coating process is carried out, the thickness of the insulating layer to be coated differs depending on the dip velocity. Table 1 below shows the thickness of the insulating layer with respect to the deposition rate. In this case, the dip coating process time was 30 seconds, the drying temperature was 500 占 폚, and the drying time was 5 minutes.

Thickness of insulating layer with deposition rate Dip velocity [mm / sec] Thickness [nm] 30 134.0 40 154.4 50 163.2 60 204.0 70 239.0 80 256.4 90 285.6

The thickness of the insulating layer is preferably 120 nm to 200 nm, and more preferably 130 nm to 160 nm. When the thickness of the insulating layer is less than 120 nm, the insulating characteristics between the first and second transparent electrode patterns are low. When the thickness of the insulating layer exceeds 200 nm, the light transmittance is low for use as a touch panel. When the thickness of the insulating layer is 130 nm, the light transmittance is 91%, which is the highest. Therefore, in order to form the insulating layer with a thickness of 130 nm, it is appropriate to set the deposition rate to 30 mm / sec.

On the other hand, the hollow silica constituting the insulating layer has a refractive index as low as about 1.2 to 1.4, so that the light transmittance of the touch panel can be improved. Table 2 below relates to the light transmittance according to the lamination structure of a hollow silica insulating layer (hereinafter referred to as Sol-gel) and a transparent electrode (ITO) by a sol-gel method on a sapphire substrate, The wavelength of the light is 550 nm.

The light transmittance according to the lamination structure of the substrate division Substrate laminate structure (thickness) Light transmittance [%] Comparative Example 1 Sapphire (5mm) 85.745 Comparative Example 2 Sapphire (5 mm) / Sol-gel (130 nm) 91.529 Comparative Example 3 Sapphire (5 mm) / ITO (90 nm) 84.47 Comparative Example 4 Sapphire (5 mm) / ITO (90 nm) / Sol-gel (130 nm) 91.439 Example 1 Sapphire (5 mm) / ITO (90 nm) / Sol-gel (130 nm) / ITO (90 nm) 87.156

Comparative Example 1 shows the light transmittance of the sapphire substrate. Comparing Comparative Examples 2 and 3, the sapphire substrate having the hollow silica insulating layer formed therein has a higher light transmittance than the sapphire substrate having the ITO electrode pattern formed thereon. In Comparative Example 4, a hollow silica insulating layer was coated on a sapphire substrate having an ITO electrode pattern formed thereon, and the light transmittance was higher than that of Comparative Examples 1 and 3. [

Example 1 of the present invention shows the light transmittance of a device completed by using a hollow silica insulating layer, which is about 2% higher than that of the sapphire substrate of Comparative Example 1. This is because of the change in optical characteristics due to the change in the refractive index between the silica film and the air on the structure (silica film + air + silica film) of the hollow silica insulating layer.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the following, a conventional glass substrate for TSP (Touch Screen Panel), a sapphire substrate for use in the present invention and a hollow silica insulating layer or ITO transparent electrode formed by a sol- Compare the insulation properties.

As shown in FIG. 3, the silver electrode 200 formed on the upper and lower portions of the substrate 100 to be measured, and the silver electrode 200 formed on the lower and upper portions of the substrate 100, respectively, And the ITO transparent electrode 300 were connected with an LCR meter to measure the capacitance of the substrate 100 located between the two electrodes 200 and 300. Table 3 below shows the capacitance values according to the type of the substrate and the lamination structure. The higher the capacitance value, the better the recognition rate of the touch panel.

Capacitance according to substrate type and lamination structure Glass and substrate laminated structure Capacitance [pF] Tempered glass for TSP 13.52 Tempered Glass for TSP / ITO (70nm) 14.27 Sapphire substrate 36.41 Sapphire substrate / ITO (70 nm) 18.62 Sapphire substrate / Sol-gel (120 nm) 35.79

Table 3 shows that the sapphire substrate has a capacitance value larger than that of the TSP tempered glass, and even if the transparent electrodes having the same thickness are formed, the sapphire substrate has a higher capacitance value than that laminated on the tempered glass for TSP. It can also be seen that the sapphire substrate coated with the hollow silica insulating layer to a thickness of 120 nm is very close to the capacitance value of the sapphire substrate itself and is almost twice as high as the capacitance value of the sapphire substrate having the ITO transparent electrode formed thereon.

As described above, the hollow silica insulating layer having a low refractive index and a high capacitance value can be formed to improve the light transmittance and electrostatic and insulation properties of the touch panel.

2. Second Embodiment

The insulating layer of the touch panel according to the second embodiment of the present invention includes hollow silica and polyimide.

The insulating layer 31 is formed by coating a coating liquid formed by mixing hollow silica and polyimide on a sapphire substrate 10 on which the first transparent electrode pattern 20 is formed. The coating liquid may be formed by adding a dispersing agent to a solution obtained by mixing a hollow silica powder and a dispersion medium and a polyimide solution. In this case, ethanol may be used as the dispersion medium, and a commercially available dispersant of BYK may be used as the dispersion medium, but the types of the dispersion medium and the dispersant are not limited thereto.

The mixing ratio of the dispersing agent and the solution is suitably from 1: 100 to 1000. The weight ratio of the hollow silica to the coating liquid is preferably 1 wt% to 10 wt%, and the weight ratio of the polyimide is preferably 1 wt% to 3 wt%. If the amount of the hollow silica is less than 1 wt%, a short circuit occurs in the insulating layer 31 through current, thereby causing dielectric breakdown. On the contrary, if the content exceeds 10 wt%, the thickness of the insulating layer 31 to be coated becomes thick, and the transmittance decreases. If the amount of polyimide is less than 1 wt%, short-circuiting occurs in the insulating layer 31 due to electric current, thereby causing breakdown of the insulation. Conversely, if the amount exceeds 3 wt%, the thickness of the insulating layer 31 to be coated becomes thick, do.

On the other hand, a coating solution can be prepared by mixing the dispersion and the polyimide solution at a ratio of 1: 1.

The thickness of the insulating layer 31 is preferably 1 mu m to 3 mu m. When a current of 5 V is applied to the insulating layer 31, when the thickness of the insulating layer is less than 1 m, current is short-circuited between the first and second transparent electrode patterns 20 and 40 and insulation breakdown occurs. high. On the other hand, when the thickness of the insulating layer exceeds 3 탆, the film thickness to be coated is thick and the light transmittance is lowered.

At this time, the capacitance value of the insulating layer 31 is 2 nF. Since the capacitance value of the polyimide is lower than that of the hollow silica, the insulating layer 31 of the second embodiment has a lower capacitance value as compared with the insulating layer 30 of the first embodiment.

3. Third Embodiment

The insulating layer of the touch panel according to the third embodiment of the present invention is formed by laminating hollow silica and polyimide.

The insulating layer is composed of first and second insulating layers 32 and 33 as shown in Fig.

The first insulating layer 32 is formed by coating a hollow silica on the sapphire substrate 10 on which the first transparent electrode pattern 20 is formed by a sol-gel method. It is appropriate that the thickness of the first insulating layer 32 is 90 nm to 170 nm.

The second insulating layer 33 is formed by coating polyimide on the first insulating layer 32. It is appropriate that the thickness of the second insulating layer 33 is 1.6 탆 to 2.0 탆.

If the thickness of the first and second insulating layers 32 and 33 is too thin, short-circuiting occurs in the insulating layer due to electric current and insulation breakdown occurs. If the thickness is too thick, the light transmittance is deteriorated.

Though not shown in the drawings, the order of the first and second insulating layers may be changed.

A method of manufacturing a touch panel according to another aspect of the present invention includes the steps of forming a first transparent electrode pattern, forming an insulating layer, and forming a second transparent electrode pattern In the following, the process steps will be described in order.

The forming of the first transparent electrode pattern may include forming a first transparent electrode pattern on a sapphire substrate used as a window.

In forming the insulating layer, a coating liquid including hollow silica is applied on a sapphire substrate having a first transparent electrode pattern formed thereon to form an insulating layer. Specifically, the coating solution is entirely coated on the sapphire substrate having the first transparent electrode pattern formed thereon, and the deposited film is deposited. At this time, the coating liquids of Examples 1 to 3 described above can be used as a coating liquid. Therefore, it is not necessary to perform a separate patterning step to form the insulating layer, so that the manufacturing steps can be simplified and the production efficiency can be enhanced.

The forming of the second transparent electrode pattern may include forming a second transparent electrode pattern on the insulating layer formed in the step of forming the insulating layer.

While the invention has been shown and described with reference to certain embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

10: sapphire substrate
20: First transparent electrode pattern
30, 31: insulating layer
32: first insulating layer
33: second insulating layer
40: second transparent electrode pattern

Claims (12)

A sapphire substrate used as a window;
A first transparent electrode pattern formed on the sapphire substrate;
An insulating layer including a hollow silica on a sapphire substrate on which the first transparent electrode pattern is formed; And
A second transparent electrode pattern formed on the insulating layer; / RTI >
Wherein the insulating layer has a thickness of 120 nm to 200 nm. A sapphire substrate used as a window;
A first transparent electrode pattern formed on the sapphire substrate;
An insulating layer including a hollow silica on a sapphire substrate on which the first transparent electrode pattern is formed; And
A second transparent electrode pattern formed on the insulating layer; / RTI >
Wherein the insulating layer comprises the hollow silica and the polyimide,
Wherein the insulating layer has a thickness of 1 mu m to 3 mu m. A sapphire substrate used as a window;
A first transparent electrode pattern formed on the sapphire substrate;
An insulating layer including a hollow silica on a sapphire substrate on which the first transparent electrode pattern is formed; And
A second transparent electrode pattern formed on the insulating layer; / RTI >
Wherein the insulating layer is formed by laminating a first insulating layer made of hollow silica and a second insulating layer made of polyimide,
Wherein the thickness of the first insulating layer is 90 nm to 170 nm, and the thickness of the second insulating layer is 1.6 to 2.0 μm. Forming a first transparent electrode pattern on a sapphire substrate used as a window;
Forming a dielectric layer by applying a coating liquid including hollow silica on a sapphire substrate having the first transparent electrode pattern formed thereon; And
Forming a second transparent electrode pattern on the insulating layer; Lt; / RTI >
Wherein the insulating layer has a thickness of 120 nm to 200 nm. Forming a first transparent electrode pattern on a sapphire substrate used as a window;
Forming a dielectric layer by applying a coating liquid including hollow silica on a sapphire substrate having the first transparent electrode pattern formed thereon; And
Forming a second transparent electrode pattern on the insulating layer; Lt; / RTI >
Wherein the insulating layer comprises the hollow silica and the polyimide,
Wherein the thickness of the insulating layer is 1 占 퐉 to 3 占 퐉. Forming a first transparent electrode pattern on a sapphire substrate used as a window;
Forming a dielectric layer by applying a coating liquid including hollow silica on a sapphire substrate having the first transparent electrode pattern formed thereon; And
Forming a second transparent electrode pattern on the insulating layer; Lt; / RTI >
Wherein the insulating layer is formed by laminating a first insulating layer made of hollow silica and a second insulating layer made of polyimide,
Wherein the first insulating layer has a thickness of 90 nm to 170 nm and the second insulating layer has a thickness of 1.6 to 2.0 μm. The method according to any one of claims 4 to 6,
Wherein the forming of the insulating layer comprises coating the coating solution by a sol-gel process. The method of claim 7,
Wherein the hollow silica powder contained in the coating liquid has an average diameter of 65 nm to 100 nm. The method of claim 7,
Wherein the amount of the hollow silica in the coating liquid is 1 wt% to 10 wt%. The method of claim 5,
The step of forming the insulating layer may include coating the coating solution by a sol-gel process,
Wherein the hollow silica is 1 wt% to 10 wt% and the polyimide is 1 wt% to 3 wt% with respect to the coating liquid. delete delete
KR1020150112453A 2015-08-10 2015-08-10 Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method KR101673483B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150112453A KR101673483B1 (en) 2015-08-10 2015-08-10 Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150112453A KR101673483B1 (en) 2015-08-10 2015-08-10 Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method

Publications (1)

Publication Number Publication Date
KR101673483B1 true KR101673483B1 (en) 2016-11-07

Family

ID=57529528

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150112453A KR101673483B1 (en) 2015-08-10 2015-08-10 Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method

Country Status (1)

Country Link
KR (1) KR101673483B1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110108529A (en) * 2010-03-29 2011-10-06 주식회사 토비스 Electrostatic capacitance type touch panel with two layer transparent conductive film on one side of tempered glass and manufacturing the same
KR20130136833A (en) * 2012-06-05 2013-12-13 재단법인 구미전자정보기술원 Touch screen integrated with window and method for manufacturing the same
KR20140021392A (en) * 2012-08-10 2014-02-20 한솔테크닉스(주) Touch screen structure, method of forming the touch screen structure, and touch screen module and touch display device including the touch screen structure
KR101405076B1 (en) * 2013-09-09 2014-07-01 (주)코이즈 Index matching film and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110108529A (en) * 2010-03-29 2011-10-06 주식회사 토비스 Electrostatic capacitance type touch panel with two layer transparent conductive film on one side of tempered glass and manufacturing the same
KR20130136833A (en) * 2012-06-05 2013-12-13 재단법인 구미전자정보기술원 Touch screen integrated with window and method for manufacturing the same
KR20140021392A (en) * 2012-08-10 2014-02-20 한솔테크닉스(주) Touch screen structure, method of forming the touch screen structure, and touch screen module and touch display device including the touch screen structure
KR101405076B1 (en) * 2013-09-09 2014-07-01 (주)코이즈 Index matching film and method of manufacturing the same

Similar Documents

Publication Publication Date Title
CN102622122B (en) Touch-screen
JP2018513483A (en) Transparent conductive coating for capacitive touch panels
CN102402338B (en) Touch screen panel and method for manufacturing same
CN102830851B (en) Touch screen and manufacturing method thereof
CN101556389B (en) Transparent capacitance type touch panel
WO2013099994A1 (en) Surface glass for capacitive touch sensors
CN101853115A (en) Integrated projection-type capacitive touch screen and manufacturing method thereof
JP2012118936A (en) Touch panel sensor with transparent sheet
TWI628563B (en) Touch-sensing electrode and touch screen panel including the same
JP5906562B2 (en) Double-sided transparent conductive film excellent in visibility and method for producing the same
TWI619051B (en) Touch panel and touch panel with display device
CN104298413A (en) Capacitive touch screen
US10198121B2 (en) Projected capacitive touch switch panel
TW200928931A (en) Capacitive overcoat structure of touch panel and touch panel having the same
KR101942294B1 (en) Touch screen panel and image display comprising the same
KR101755351B1 (en) Touch panel with polyimide insulating layer on sapphire substrate and its manufacturing method
KR101673483B1 (en) Touch panel with hollow silica insulating layer on sapphire substrate and its manufacturing method
JP2020510948A (en) Glass to protect capacitive touch systems
CN103488369A (en) Touch screen without chromatic aberration and method for manufacturing touch screen
KR20150060337A (en) Composite powder, pigment paste using the same and touch sensor
CN102967972A (en) Capacitive touch array substrate and manufacturing method thereof and liquid crystal panel
CN102866807A (en) Touch screen and manufacturing method thereof
CN112433639A (en) Capacitive touch screen, manufacturing method and application thereof
CN102870070A (en) Method for manufacturing a pad for a touch panel, and pad for a touch panel manufactured by same
JP2015230510A (en) Touch panel sensor substrate, touch panel sensor and display device

Legal Events

Date Code Title Description
A201 Request for examination
GRNT Written decision to grant