KR101663638B1 - APD using modulation doped absorber - Google Patents
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Abstract
본 발명은 상기 목적을 달성하기 위한 것으로서, 분리된 흡수층 및 증폭층(separate absorption and multiplication)을 갖는 애벌랜치 포토다이오드에 있어서, 상기 흡수층은 전계가 걸린 흡수층과 도핑된 흡수층의 조합으로 변형형성되고, 상기 도핑된 흡수층은, 상기 전계가 걸린 흡수층과 비흡수층 사이에 형성되며, 상기 전계가 걸린 흡수층의 도핑 농도보다 상대적으로 높은 도핑 농도를 가지는 도핑층으로 이루어진 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드를 기술적 요지로 한다. 이에 의해, 기존의 흡수층에 도핑층을 추가하여 변형된 도핑 흡수층을 형성하여, 주파수 특성을 유지하면서 효율은 증가시키는 이점이 있다.In order to achieve the above object, the present invention provides an avalanche photodiode having separate absorption and multiplication, wherein the absorption layer is deformed by a combination of an electric field absorbing layer and a doped absorption layer, Wherein the doped absorbing layer is formed between the absorbing layer and the non-absorbing layer between the electric field and the doping layer having a doping concentration relatively higher than the doping concentration of the electric field absorbing layer. The diode is a technical point. Thereby, the doping layer is added to the existing absorption layer to form a modified doping absorption layer, thereby increasing the efficiency while maintaining the frequency characteristics.
Description
본 발명은 애벌랜치 포토다이오드에 관한 것으로서, 기존의 흡수층에 도핑층을 추가하여 주파수 특성을 유지하면서 효율은 증가시키는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드에 관한 것이다.The present invention relates to an avalanche photodiode, and more particularly, to an avalanche photodiode using a modified doping absorption layer which increases the efficiency while maintaining a frequency characteristic by adding a doping layer to a conventional absorption layer.
포토다이오드는 광전 변환 소자로서, 흡수된 광을 전기적 신호로 변환시켜서 출력하는 것으로, 그 중 애벌랜치 포토다이오드(Avalanche Photodiode, APD)는 변환된 전기 신호를 그 내부에서 증폭시켜서 출력하는 것이다.A photodiode is a photoelectric conversion element that converts absorbed light into an electrical signal and outputs the electrical signal. Among them, an avalanche photodiode (APD) amplifies the converted electrical signal and outputs it.
일반적으로, 분리된 흡수층 및 증폭층(separate absorption and multiplication)을 갖는 애벌랜치 포토다이오드는, 흡수층으로 입력된 광에 의해 흡수층을 여기시키고, 여기된 흡수층은 전자-정공 쌍을 생성하게 된다. 여기된 전자-정공 쌍은 내부 전기장에 의해 반대방향으로 분리되며, 전자는 하부 전극을 통해서 방출되고, 정공은 증폭층으로 주입되어 증폭층에 인가된 높은 전기장에 의해 가속에너지를 얻어 증폭층으로 사용한 물질의 가전대의 전자와 충돌하여 새로운 전자와 정공 쌍을 생성하는 내부 증폭이 발생하며, 증폭된 정공은 상부 전극을 통해서 출력되는 것이다.Generally, an avalanche photodiode with a separate absorption and multiplication excites the absorber layer by light input to the absorber layer, and the excited absorber layer produces an electron-hole pair. The excited electron-hole pairs are separated in the opposite direction by the internal electric field, electrons are emitted through the lower electrode, holes are injected into the amplification layer, and acceleration energy is obtained by the high electric field applied to the amplification layer. Internal amplification occurs to generate new electrons and hole pairs by colliding with the electrons of the electron source of the material, and the amplified holes are output through the upper electrode.
도 1은 기존의 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 것으로, 정공이 왼쪽으로 움직여서 높은 전계 영역에서 애벌랜치(증폭) 현상이 일어나 전류가 증폭되게 된다.(파란색은 conduction band Ec, 빨간색은 valence band Ev)FIG. 1 shows a band diagram of a conventional avalanche photodiode. As the holes move to the left, avalanche (amplification) occurs in a high electric field region and the current is amplified (blue is conduction band Ec and red is valence band Ev)
여기에서 효율을 향상시키고자 흡수층을 두껍게 하면 응답 속도가 낮아지게 되며, 전계에 의해 캐리어(여기에서는 정공)가 끌려가는 드리프트(drift) 현상만 일어나게 된다.Here, when the absorption layer is made thick to improve the efficiency, the response speed is lowered, and only the drift phenomenon in which carriers (here, holes) are attracted by the electric field occurs.
이와 같이, 애벌랜치 포토다이오드는 광에서 변환된 전기신호를 내부적으로 증폭시킴으로써 다른 형태의 증폭 소자에 비해서 상대적으로 작은 잡음의 큰 출력을 갖는 전기 신호를 출력할 수 있다.As described above, the avalanche photodiode can internally amplify an electric signal converted from light, thereby outputting an electric signal having a relatively small noise and a relatively large output as compared with other types of amplification devices.
이러한 애벌랜치 포토다이오드에 있어서, 주된 관심사는 광흡수 효율을 향상시키는 것과 응답속도를 개선시키는 것이다.For such avalanche photodiodes, a major concern is to improve the light absorption efficiency and the response speed.
그러나, 광흡수 효율을 개선시키기 위해서는 흡수층이나 증폭층의 두께를 두껍게 하여 두께가 두꺼울수록 흡수 효율이 1에 가까워지지만, 그 만큼 응답속도가 느려지는 경향을 보이므로, 흡수 효율과 주파수 특성의 트레이드 오프(trade off)가 필요하다.However, in order to improve the light absorption efficiency, the absorbing efficiency becomes closer to 1 as the thickness of the absorption layer or the amplification layer becomes thicker as the thickness becomes thicker. However, since the response speed tends to be slowed by that much, a trade off is required.
응답속도 향상을 위해서 증폭층의 폭을 작게하면, 에지 항복이 일어날 가능성이 커지게 되는 문제가 있어, 증폭층에 확산 영역을 형성하거나, 가드링(Guard ring) 영역을 형성하기도 한다.If the width of the amplification layer is made small to improve the response speed, there is a problem that edge breakage is likely to occur. A diffusion region is formed in the amplification layer or a guard ring region is also formed.
그러나, 흡수층에 대한 흡수 효율과 주파수 특성에 대한 트레이드 오프 관계를 완화하기 위한 구조는 그 연구가 미흡한 실정이다.However, the structure for relaxing the trade-off relation to the absorption efficiency and the frequency characteristic for the absorbing layer has not been sufficiently studied.
본 발명은 애벌랜치 포토다이오드에 있어서, 흡수층에 도핑층을 추가하여 주파수 특성을 유지하면서 효율을 증가시키는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드의 제공을 그 목적으로 한다.The present invention provides an avalanche photodiode using a modified doping absorption layer which increases the efficiency while maintaining the frequency characteristics by adding a doping layer to the absorption layer in the avalanche photodiode.
본 발명은 상기 목적을 달성하기 위한 것으로서, 분리된 흡수층 및 증폭층(separate absorption and multiplication)을 갖는 애벌랜치 포토다이오드에 있어서, 상기 흡수층은 전계가 걸린 흡수층과 도핑된 흡수층의 조합으로 변형형성되고, 상기 도핑된 흡수층은, 상기 전계가 걸린 흡수층과 비흡수층 사이에 형성되며, 상기 전계가 걸린 흡수층의 도핑 농도보다 상대적으로 높은 도핑 농도를 가지는 도핑층으로 이루어진 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드를 기술적 요지로 한다.In order to achieve the above object, the present invention provides an avalanche photodiode having separate absorption and multiplication, wherein the absorption layer is deformed by a combination of an electric field absorbing layer and a doped absorption layer, Wherein the doped absorbing layer is formed between the absorbing layer and the non-absorbing layer between the electric field and the doping layer having a doping concentration relatively higher than the doping concentration of the electric field absorbing layer. The diode is a technical point.
또한, 상기 도핑된 흡수층은, 단계적으로 도핑 농도의 차이를 두는 스텝형 도핑층으로 형성된 것이 바람직하며, 상기 도핑된 흡수층은, 상기 비흡수층으로부터 상기 전계가 걸린 흡수층 방향으로 도핑 농도가 단계적으로 감소하는 것이 바람직하다.It is preferable that the doped absorbing layer is formed of a stepped doping layer having a difference in doping concentration step by step and the doped absorbing layer is formed in such a manner that the doping concentration gradually decreases in the direction of the absorbing layer from the non- .
또한, 상기 도핑된 흡수층은, 연속적으로 도핑 농도의 차이를 두는 연속형 도핑층으로 형성된 것이 바람직하다.In addition, it is preferable that the doped absorbing layer is formed as a continuous doping layer which continuously changes the doping concentration.
또한, 상기 도핑된 흡수층은, 단계적으로 도핑 농도의 차이를 두는 스텝형 도핑층과 연속적으로 도핑 농도의 차이를 두는 연속형 도핑층의 조합으로 이루어진 것이 바람직하다.It is preferable that the doped absorption layer comprises a combination of a stepped doping layer having a difference in doping concentration step by step and a continuous doping layer having a difference in doping concentration continuously.
한편, 상기 도핑된 흡수층에는 필드스탑 도핑(field stop dopping)이 더 이루어지되, 상기 필드스탑 도핑은 상기 전계가 걸린 흡수층에 인접하여 형성된 것이 바람직하며, 또한, 상기 필드스탑 도핑이 이루어진 도핑된 흡수층의 도핑 농도는 1e16cm-3~ 1e19cm-3이고, 필드스탑 도핑의 농도는 1 ~ 1e19cm-3인 것이 바람직하다.The doped absorption layer may further include a field stop doping. The field stop doping may be formed adjacent to the electric field absorbing layer. In addition, the doped absorbing layer The doping concentration is preferably 1e16 cm -3 to 1e19 cm -3 , and the concentration of the field stop doping is preferably 1 to 1 e 19 cm -3 .
또한, 상기 도핑된 흡수층의 도핑 농도는, 1e16cm-3~ 5e19cm-3의 범위를 갖는 것이 바람직하며, 또한, 상기 도핑된 흡수층과 상기 전계가 걸린 흡수층의 두께의 비는 0.5~2 : 10인 것이 바람직하다.The doping concentration of the doped absorption layer preferably ranges from 1e16 cm -3 to 5e 19 cm -3 and the ratio of the thickness of the doped absorption layer to the thickness of the absorption layer with the electric field is 0.5 to 2:10 desirable.
여기에서, 상기 흡수층은, InGaAs, GaN, InGaN, GaAs, AlGaAs, AlAs, InP, InAlAs, InAlAsP, InSb, AlSb 중 어느 하나의 물질을 이용하는 것이 바람직하다.The absorbing layer may be made of any one of InGaAs, GaN, InGaN, GaAs, AlGaAs, AlAs, InP, InAlAs, InAlAsP, InSb and AlSb.
본 발명은 애벌랜치 포토다이오드에 있어서, 기존의 흡수층에 도핑층을 추가하여 변형된 도핑 흡수층을 형성하여, 주파수 특성을 유지하면서 효율은 증가시키는 효과가 있다.In the avalanche photodiode of the present invention, a doping layer is added to an existing absorption layer to form a modified doping absorption layer, thereby increasing efficiency while maintaining frequency characteristics.
또한, 본 발명에 따른 도핑층은 전계가 걸린 흡수층에 추가적으로, 단일 도핑층을 형성하거나, 스텝형 또는 연속형 도핑층을 형성하는 것에 의해, 내부 전기장을 발생시키는 데에 기여하여, 캐리어가 증폭층으로 도달하는 속도를 가속할 수 있도록 하여, 효율 특성 및 응답 속도를 개선하여, 애벌랜치 포토다이오드의 전체적인 성능을 개선시키는 효과가 있다.The doping layer according to the present invention may further contribute to generating an internal electric field by forming a single doping layer or a stepped or continuous doping layer in addition to the electric field absorbing layer, To improve the efficiency characteristics and the response speed, thereby improving the overall performance of the avalanche photodiode.
도 1 - 기존의 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 도.
도 2 - 본 발명의 일실시예에 따른 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 도.
도 3~도 5 - 각각 본 발명의 다른 실시예에 따른 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 도.1 shows a band diagram of a conventional avalanche photodiode.
Figure 2 is a band diagram of an avalanche photodiode according to one embodiment of the present invention.
Figures 3-5 illustrate band diagrams of an avalanche photodiode according to another embodiment of the present invention, respectively.
본 발명은 애벌랜치 포토다이오드에 있어서, 기존의 흡수층에 도핑층을 추가하여 변형된 도핑 흡수층을 형성하여, 주파수 특성을 유지하면서 효율을 증가시키는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드에 관한 것이다.
The present invention relates to an avalanche photodiode using a modified doping absorption layer which increases the efficiency while maintaining frequency characteristics by forming a doped absorption layer by adding a doping layer to an existing absorption layer in an avalanche photodiode.
이하에서는 첨부된 도면을 참조하여 본 발명에 대해 상세히 설명하고자 한다. 도 1은 기존의 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 것이고, 도 2는 본 발명의 일실시예에 따른 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 것이고, 도 3~도 5는 각각 본 발명의 다른 실시예에 따른 애벌랜치 포토다이오드의 밴드다이어그램을 나타낸 것이다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows a band diagram of a conventional avalanche photodiode, FIG. 2 shows a band diagram of an avalanche photodiode according to an embodiment of the present invention, and FIGS. 3 to 5 show a band diagram of an avalanche photodiode according to another embodiment FIG. 2 shows a band diagram of an avalanche photodiode according to the present invention.
본 발명에 따른 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드는, 분리된 흡수층 및 증폭층(separate absorption and multiplication)을 갖는 애벌랜치 포토다이오드에 있어서, 상기 흡수층은 전계가 걸린 흡수층과 도핑된 흡수층의 조합으로 변형형성되고, 상기 도핑된 흡수층은, 상기 전계가 걸린 흡수층과 비흡수층 사이에 형성되며, 상기 전계가 걸린 흡수층의 도핑 농도보다 상대적으로 높은 도핑 농도를 가지는 도핑층으로 이루어진 것이다.The avalanche photodiode using a modified doping absorption layer according to the present invention is an avalanche photodiode having a separate absorption and multiplication layer, wherein the absorption layer is deformed by a combination of an electric field absorbing layer and a doped absorption layer The doped absorbing layer is formed between the absorbing layer and the non-absorbing layer to which the electric field is applied, and is composed of a doping layer having a doping concentration relatively higher than the doping concentration of the absorbing layer in which the electric field is applied.
본 발명에 따른 애벌랜치 포토다이오드는, PIN 포토다이오드 구조를 기본으로 하는 것으로, PIN 포토다이오드는 PN접합 사이에 I층(intrinsic layer)을 끼운 것이다. 이에 의해 입사광에 의한 전자-정공 쌍의 발생이 고전계가 존재하는 I층(공핍층)에서 발생하기 때문에 응답속도가 빠르고 변환효율도 좋은 특징으로 가지고 있으며, 일반적으로 사용할 때는 역바이어스 전압을 인가한다. 따라서, 전자는 N층으로 이동하고, 정공은 P층으로 이동하여 전류로 출력되는 것이다.The avalanche photodiode according to the present invention is based on a PIN photodiode structure, and the PIN photodiode has an intrinsic layer sandwiched between PN junctions. As a result, the generation of electron-hole pairs due to incident light occurs in the I layer (depletion layer) in which a high electric field exists. Therefore, the response speed is fast and the conversion efficiency is good. In general, reverse bias voltage is applied. Therefore, the electrons move to the N layer, and the holes move to the P layer and are output as a current.
즉, PIN포토다이오드 구조에 있어서, I층은 일종의 공핍층의 역할을 하며, 이는 애벌랜치 포토다이오드에 있어서 흡수층(전계가 걸린 흡수층)의 역할을 하게 된다. 도 1에 도시된 바와 같이, 전계가 걸려 있으므로 전자와 정공은 반대방향으로 드리프트(drift)하게 된다.That is, in the PIN photodiode structure, the I layer serves as a depletion layer, which serves as an absorbing layer (an absorbing layer with an electric field) in the avalanche photodiode. As shown in FIG. 1, electrons and holes drift in opposite directions because an electric field is applied.
이러한 전계가 걸린 흡수층은 두께를 두껍게 할수록 광흡수 효율은 향상되지만, 두께가 두꺼운 만큼 응답속도가 느리게 되므로, 주파수 특성을 유지하면서 효율은 향상시키기 위해, 기존의 도핑된 층을 흡수층으로 이용하는 UTC(Uni-Traveling-Carrier) 포토다이오드에서 매우 얇은 흡수층의 확산 현상이 두꺼운 흡수층에서의 표동(drift) 현상보다 훨씬 빠른 응답 특성을 갖는다는 것을 활용한 소자이다.In order to improve the efficiency while maintaining the frequency characteristics, the UTC (Uni) method using the conventional doped layer as the absorbing layer is used to improve the light absorbing efficiency as the thickness of the absorbing layer with the electric field increases, -Traveling-Carrier) This device utilizes the fact that the diffusion phenomenon of a very thin absorption layer in a photodiode has a much faster response characteristic than a drift phenomenon in a thick absorption layer.
따라서, 본 발명은 도 2에 도시된 바와 같이, 기존의 흡수층에 도핑층을 추가로 형성하는 것으로서, 구체적으로는, 흡수층이 전계가 걸린 흡수층과 도핑된 흡수층의 조합으로 형성되도록 한 것이다.Accordingly, as shown in FIG. 2, the present invention further forms a doping layer in a conventional absorbing layer, specifically, the absorbing layer is formed by a combination of an absorbing layer with an electric field and a doped absorbing layer.
이에 의해 애벌랜치 포토다이오드에 있어서, 캐리어(정공)의 수송이 기존의 흡수층(전계가 걸린 흡수층)에서는 드리프트에 의해 이루어지고, 얇은 도핑된 흡수층(전계가 걸리지 않은 흡수층)에서는 확산에 의해 이루어지도록 한 것이다.As a result, in the avalanche photodiode, the carrier (hole) is transported by drift in a conventional absorption layer (an electric field-bearing absorption layer) and diffused in a thinly-doped absorption layer (an electric field-free absorption layer) .
따라서, 전체적으로 흡수층에서의 캐리어의 수송 속도(응답 속도)가 유지되도록 하여, 주파수 특성 희생을 최소화하면서 흡수층 두께를 두껍게 할 수 있으므로, 효율이 증가하게 되며, 또는 동일한 흡수층 두께를 유지할 경우에는 주파수 특성을 개선시키는 것이다.Therefore, the transport speed (response speed) of the carrier in the absorbing layer as a whole can be maintained so that the thickness of the absorbing layer can be increased while minimizing the frequency characteristic sacrifice, so that the efficiency is increased or when the same absorbing layer thickness is maintained, And to improve it.
이러한 도핑된 흡수층은 도 2에 도시된 바와 같이 상기 전계가 걸린 흡수층과 비흡수층 사이에 형성되며, 상기 전계가 걸린 흡수층의 농도보다 상대적으로 높은 도핑 농도를 가지는 도핑층으로 이루어진 것이다.The doped absorbing layer is formed between the absorbing layer and the non-absorbing layer, as shown in FIG. 2, and is composed of a doping layer having a doping concentration relatively higher than the concentration of the absorbing layer in which the electric field is applied.
상기 전계가 걸린 흡수층은 기본 흡수층으로 I층(intrinsic layer)에 의한 일종의 공핍층으로, 도핑 농도는 undoped ~ 1e15cm-3(unintentional doped) 정도이며, 상기 도핑된 흡수층의 도핑 농도는 1e16cm-3~ 5e19cm-3의 범위를 갖는다.The doped concentration of the doped absorption layer is in the range of 1e16 cm-3 to 5e19 cm-1, and the doping concentration of the doped absorption layer is in the range of 1e16 cm- 3 to 5e19 cm-1 -3 . ≪ / RTI >
여기에서 상기 전계가 걸린 흡수층은 I층(intrinsic layer)으로 일종의 공핍층의 역할을 하므로, 공핍된 흡수층과 비흡수층 사이에 도핑층이 형성되어 흡수층을 변형형성하며, 도핑층은 1개 층을 변형하여 여러 층을 둘 수도 있다. 상기 비흡수층은 PIN 구조에 있어서, 공핍층 즉 전계가 걸린 흡수층을 제외한 영역으로, 도 2 내지 도 5의 밴드다이어그램에서 제일 오른쪽의 영역을 말하며, 소자 상에서는 N층이 될 것이다.Since the electric field absorbing layer serves as a depletion layer as an intrinsic layer, a doping layer is formed between the depleted absorbing layer and the non-absorbing layer to deform the absorbing layer. The doping layer deforms one layer You can have multiple layers. In the PIN structure, the non-absorbing layer is a region excluding a depletion layer, that is, an absorbing layer in which an electric field is applied, which is the rightmost region in the band diagrams of FIGS.
상술한 바와 같이, 상기 전계가 걸린 흡수층에서는 캐리어가 전계에 의해 수송되는 드리프트(drift)에 의하고, 도핑층에서는 캐리어 확산(fiffusio)에 의해 캐리어 수송 시간(carrier transit time)이 결정되므로 응답특성을 높이기 위해 신중히 선택하여야 하며, 효율을 높이기 위해서는 그 두께를 적절히 늘여도 된다.As described above, in the absorption layer in which the electric field is applied, the carrier transit time is determined by the drift carried by the carrier by the electric field and the carrier diffusion by the carrier diffusion (fiffusio) in the doped layer, It should be selected carefully, and the thickness may be appropriately increased to improve efficiency.
특히, 공핍층(의도적이지 않은 도핑된 흡수층, 전계가 걸린 흡수층)의 두께를 유지하면서 밴드갭이 낮은 도핑층을 얇게하면 밴드갭이 큰 물질이 차지하는 비율이 높아지게 되어 암전류를 감소시키게 된다.Particularly, when the doping layer having a low band gap is thinned while maintaining the thickness of the depletion layer (the unintentional doped absorbing layer or the electric field absorbing layer), the proportion of the material having a large band gap increases, thereby reducing the dark current.
여기에서, 상기 도핑된 흡수층과 전계가 걸린 흡수층의 두께의 비는 0.5~2:10을 만족하는 것이 바람직하다. 도핑된 흡수층의 두께가 너무 얇으면 흡수층의 두께 증가의 효과가 미미하며, 도핑된 흡수층의 두께가 너무 두꺼우면 확산 속도가 떨어져, 흡수층 내에서의 응답 속도가 저하될 수 있으므로, 상기의 범위의 두께가 바람직하다. Here, the ratio of the thickness of the doped absorbing layer to the thickness of the absorbing layer in an electric field is preferably 0.5 to 2:10. If the thickness of the doped absorbent layer is too thin, the effect of increasing the thickness of the absorbent layer is insignificant. If the thickness of the doped absorbent layer is too thick, the diffusion rate may fall and the response speed in the absorbent layer may deteriorate. .
한편, 상기 흡수층은, InP 기판에 격자가 일치되거나 10% 오차범위 격자부정합 또는 정합된 조성의 물질이면 무방하며, 예컨대 InGaAs, InGaAsP.InGaAs, GaN, InGaN, GaAs, AlGaAs, AlAs, InP, InAlAs, InAlAsP, InSb, AlSb 중 어느 하나의 물질을 이용하며, 전계가 걸린 흡수층과 도핑된 흡수층을 동일한 물질로 사용하여도 되며, 도핑된 흡수층은 이온 주입 등 종래의 도핑 방법에 의해 도핑 타입 및 도핑 농도를 조절하여 형성한다.
The absorption layer may be a material having a lattice matching with the InP substrate or a material with a 10% error lattice mismatched or matched composition. For example, the absorption layer may be formed of InGaAs, InGaAsP.InGaAs, GaN, InGaN, GaAs, AlGaAs, AlAs, InP, InAlAs, InAlAsP, InSb, and AlSb may be used. The absorption layer and the doped absorption layer may be used as the same material. The doped absorption layer may be doped by the conventional doping method such as ion implantation, Respectively.
또한, 본 발명의 다른 실시예로 도 3에 도시한 바와 같이, 상기 도핑된 흡수층은 단계적으로 도핑 농도의 차이를 두는 스텝형 도핑층으로 형성될 수 있다.In another embodiment of the present invention, as shown in FIG. 3, the doped absorption layer may be formed as a step-type doping layer having a difference in doping concentration stepwise.
이에 의해 캐리어의 확산과 드리프트가 반복적으로 이루어지게 되며, 확산 영역에서는 캐리어의 속도가 드리프트 영역에서 보다 더 빠르므로, 흡수층의 두께를 증가하여도 주파수 특성은 유지하면서 효율 특성은 증가시킬 수 있도록 하는 것이다.As a result, carrier diffusion and drift are repeatedly performed. In the diffusion region, the carrier velocity is faster than in the drift region, so that the efficiency characteristic can be increased while maintaining the frequency characteristic even if the thickness of the absorption layer is increased .
또한, 두께에 비례하는 공핍층에서의 캐리어가 차지하는 시간(Wb/vh, Wb는 공핍층의 두께, vh는 정공이 전계에 의해 끌려가는 포화속도)과, 도핑층에서의 차지하는 시간(Wa^2/Dh, Wa는 도핑층의 두께, Dh는 확산계수)은, Wb/vh > Wa^2/Dh이어야 주파수 특성에 손실이 없게 된다.(Wb / vh, Wb is the thickness of the depletion layer, vh is the saturation rate at which the holes are attracted by the electric field) occupied by carriers in the depletion layer proportional to the thickness, and the time occupied by the doping layer / Dh, Wa is the thickness of the doped layer, and Dh is the diffusion coefficient) is Wb / vh> Wa ^ 2 / Dh.
도 3은 3단계의 도핑 농도의 차이를 둔 것으로, 도핑된 흡수층의 도핑 농도는 undoped ~ 1e15cm-3(unintentional doped) 정도이며, 상기 도핑된 흡수층은 1e16cm-3~ 5e19cm-3의 범위 내에서 도핑 농도를 스텝형으로 둔 것이다.FIG. 3 shows the difference in the doping concentration in the third step. The doping concentration of the doped absorption layer is about undoped to 1e15 cm -3 (unintentional doped), and the doped absorption layer is doped in the range of 1e16 cm -3 to 5e 19 cm -3 . The concentration will be stepped.
구체적으로는, 상기 비흡수층으로부터 상기 전계가 걸린 흡수층 방향으로 도핑 농도가 단계적으로 감소하도록 형성되는 것이 바람직하다. 이는 전계가 걸린 흡수층 쪽으로는 도핑 농도가 감소되도록 하고, 이보다 멀수록 도핑 농도를 증가되도록 한 것으로, 공핍층에 강한 전계가 발생할 수 있도록 하면서, 캐리어가 더 빨리 확산될 수 있도록 하여 두께가 증가하였음에도 주파수 특성은 유지할 수 있도록 하기 위해서다.Specifically, it is preferable that the doping concentration is formed so as to decrease stepwise from the non-absorbing layer toward the absorbing layer in which the electric field is applied. This is because the doping concentration is decreased toward the electric field absorbing layer and the doping concentration is increased when the electric field is applied. The thickness can be increased by allowing the carriers to diffuse more quickly while allowing a strong electric field to be generated in the depletion layer, In order to maintain the characteristics.
일실시예로는 도 3에서 제일 왼쪽의 전계가 걸린 흡수층에 인접하여 형성된 도핑된 흡수층의 도핑 농도는 1e17cm-3이고, 그 다음은 1e18cm-3, 마지막으로 비흡수층에 인접하여 형성된 도핑된 흡수층의 도핑 농도는 5e18cm-3이다.In one embodiment the doping concentration of the doped absorbing layer formed adjacent to the absorbing layer takes the electric field of the far left in Fig. 3 is a 1e17cm -3, followed by 1e18cm -3, the doping of the absorber layer formed adjacent to the last non-absorbent The doping concentration is 5e18 cm -3 .
또한, 도 3에 도시된 바와 같이, 상기 도핑된 흡수층은, 상기 비흡수층으로부터 상기 전계가 걸린 흡수층 방향으로 동일한 도핑 농도를 가지는 도핑층의 두께가 단계적으로 증가하도록 형성하는 것이 바람직하다. 그러나, 흡수층 및 도펀트에 따라 도핑층의 두께를 일정 또는 감소시켜 형성할 수도 있다.As shown in FIG. 3, it is preferable that the doped absorbing layer is formed such that the thickness of the doping layer having the same doping concentration in the direction from the non-absorbing layer toward the absorbing layer in which the electric field is applied is increased stepwise. However, the thickness of the doping layer may be formed to be constant or reduced depending on the absorption layer and the dopant.
즉, 상기 도핑된 흡수층은 상술한 바와 같이, 상기 비흡수층으로부터 상기 전계가 걸린 흡수층 방향으로 도핑 농도가 단계적으로 감소하되, 도핑층의 두께는 단계적으로 증가하도록 형성한 것이다.That is, as described above, the doped absorbing layer is formed such that the doping concentration is gradually decreased in the direction from the non-absorbing layer toward the absorbing layer where the electric field is applied, while the thickness of the doping layer is increased stepwise.
일반적으로 도핑층에서의 차지하는 시간(Wa^2/Dh, Wa는 도핑층의 두께, Dh는 확산계수)은 도핑층의 두께의 2제곱에 비례하므로, 두께가 두꺼울수록 캐리어가 머무는 시간이 길어진다, 즉, 확산속도가 떨어진다는 것이다. 그러나, 두께가 두껍더라도 이미 비흡수층에서의 첫번째 확산영역에서 가속된 캐리어는 드리프트 영역을 통과한 후, 두번째 확산영역에서는 더욱 가속되어, 확산속도가 떨어지는 효과가 거의 없게 되는 것이다.Generally, the time (Wa ^ 2 / Dh, Wa is the thickness of the doping layer and Dh is the diffusion coefficient) in the doping layer is proportional to the square of the thickness of the doping layer. That is, the diffusion rate is lowered. However, even if the thickness is thick, the carrier accelerated in the first diffusion region in the non-absorbing layer is accelerated further in the second diffusion region after passing through the drift region, and the diffusion rate is hardly reduced.
따라서, 비흡수층으로부터 도핑층의 두께를 점진적으로 증가하여, 흡수층의 두께 증가에 의한 효율 특성을 개선시키면서, 캐리어가 더 빨리 확산될 수 있도록 하여 주파수 특성은 유지되도록 한 것이다.
Therefore, the thickness of the doping layer is gradually increased from the non-absorbing layer to improve the efficiency characteristic by increasing the thickness of the absorbing layer, while allowing the carrier to diffuse more quickly, so that the frequency characteristic is maintained.
또한, 본 발명의 다른 실시예로 상기 도핑된 흡수층은 도 4에 도시된 바와 같이 연속적으로 도핑 농도의 차이를 두는 연속형 도핑층으로 형성할 수도 있다. 이에 의해 흡수층의 두께를 증가시키면서, 확산은 가속시켜 효율 특성은 향상시키고, 주파수 특성은 유지할 수 있도록 하였다. 여기에서, 상기 연속적인 도핑 농도의 프로파일은 e^a(a는 임의의 실수)의 함수로 표현될 수 있다.
In another embodiment of the present invention, the doped absorption layer may be formed as a continuous doping layer having a difference in doping concentration continuously as shown in FIG. As a result, while increasing the thickness of the absorbing layer, diffusion is accelerated to improve the efficiency characteristics and maintain the frequency characteristics. Here, the profile of the continuous doping concentration can be expressed as a function of e ^ a (a is any real number).
또한, 본 발명의 또 다른 실시예로, 상기 도핑된 흡수층은, 단계적으로 도핑 농도의 차이를 두는 스텝형 도핑층과 연속적으로 도핑 농도의 차이를 두는 연속형 도핑층의 조합으로 이루지도록 한다. 이에 의해 흡수층의 두께를 증가시키면서, 확산은 가속시켜 효율 특성은 향상시키고, 주파수 특성은 유지할 수 있도록 하였다.
In still another embodiment of the present invention, the doped absorbing layer is formed of a combination of a stepped doping layer having a difference in doping concentration step by step and a continuous doping layer having a difference in doping concentration continuously. As a result, while increasing the thickness of the absorbing layer, diffusion is accelerated to improve the efficiency characteristics and maintain the frequency characteristics.
또한, 상기 도핑된 흡수층에는 도 3 내지 도 5에 도시한 바와 같이, 필드스탑 도핑(field stop dopping)이 더 이루어지되, 상기 필드스탑 도핑은 상기 전계가 걸린 흡수층에 인접하여 형성되는 것이 바람직하다.Also, as shown in FIGS. 3 to 5, the doped absorption layer is further subjected to field stop doping, and the field stop doping is preferably formed adjacent to the electric field absorbing layer.
상기 필드스탑 도핑층의 왼쪽은 공핍층은 undoped ~ 1e15cm-3(unintentional doped)의 낮은 불순물 농도를 가지기 때문에 약간의 전계만 인가되어도 공핍이 되게 된다. 그런데, 더 높은 전압이 가해지면 도핑층도 부분적으로 공핍이 되기 시작하는데 이를 최소화하기 위한 것이다.Since the depletion layer on the left side of the field stop doping layer has a low impurity concentration of undoped ~ 1e15 cm -3 (unintentional doped), depletion occurs even if only a slight electric field is applied. However, if a higher voltage is applied, the doping layer also begins to partially deplete to minimize this.
즉, 필드스탑 도핑층을 중심으로 왼쪽은 공핍층을 오른쪽은 도핑층(전계~0)인 영역을 만들기 위한 것이다. 이에 의해 공핍층이 넓어짐으로 인한 상대적으로 주파수 특성이 감소하는 것을 막을 수 있도록 하는 것이다.That is, a depletion layer is formed on the left side of the field stop doping layer and a doping layer (electric field ~ 0) is formed on the right side of the field stop doping layer. Thereby preventing the frequency characteristic from being reduced relatively due to the depletion layer being widened.
또한, 상기 필드스탑 도핑이 이루어진 도핑된 흡수층의 도핑 농도는 1e16cm-3~ 1e19cm-3이고, 필드스탑 도핑의 농도는 1 ~ 1e19cm-3로 형성되어, 전계가 걸린 흡수층의 농도보다는 높게 형성되어 공핍층의 공핍 영역의 확산을 막기 위한 것이다.
Also, the doping concentration of the doped absorption layer doped with the field stop is in the range of 1e16 cm -3 to 1e19 cm -3 , the concentration of the field stop doping is in the range of 1 to 1e 19 cm -3 , and is higher than the concentration of the electric field absorbing layer, To prevent diffusion of the depletion region of the p-layer.
이와 같이, 전계가 걸린 흡수층에 추가적으로, 단일 도핑층을 형성하거나, 스텝형 또는 연속형 도핑층을 형성하는 것(각 경우에 필드스탑 도핑층을 형성할 수 있다)은 흡수층에서의 강한 전계를 발생시키고, 광 여기된 전자, 정공이 천이층(grading layer)을 통과하여 증폭층으로 도달하는 속도를 증가시키기 위한 것으로서, 애벌랜치 포토다이오드 전체 성능을 개선시키게 되는 것이다.Thus, in addition to an electric field-bearing absorber layer, forming a single doped layer or forming a stepped or continuous doping layer (which in each case can form a field-stop doped layer) generates a strong electric field in the absorber layer And increases the speed at which the photoexcited electrons and holes reach the amplification layer through the grading layer, thereby improving the overall performance of the avalanche photodiode.
즉, 이러한 도핑층의 형성은 내부 전기장을 발생시키는 데에 기여하여, 캐리어가 증폭층으로 도달하는 속도를 가속할 수 있도록 하여, 효율 특성 및 응답 속도를 개선하여, 애벌랜치 포토다이오드의 성능을 개선시키게 되는 것이다.That is, the formation of such a doping layer contributes to the generation of an internal electric field, which can accelerate the rate at which the carrier reaches the amplification layer, thereby improving the efficiency characteristics and the response speed and improving the performance of the avalanche photodiode .
Claims (10)
상기 흡수층은 전계가 걸린 흡수층과 도핑된 흡수층의 조합으로 변형형성되고,
상기 도핑된 흡수층은,
상기 전계가 걸린 흡수층과 비흡수층 사이에 형성되며, 상기 전계가 걸린 흡수층의 도핑 농도보다 상대적으로 높은 도핑 농도를 가지는 도핑층으로 이루어지며,
상기 도핑된 흡수층에는 필드스탑 도핑(field stop dopping)이 더 이루어지되, 상기 필드스탑 도핑은 상기 전계가 걸린 흡수층에 인접하여 형성된 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.In an avalanche photodiode having separate absorption and multiplication layers,
The absorbing layer is deformed by a combination of an absorbing layer with an electric field and a doped absorbing layer,
The doped absorbing layer may be formed,
And a doping layer formed between the electric field absorbing layer and the non-absorbing layer and having a doping concentration relatively higher than a doping concentration of the electric field absorbing layer,
Wherein the doped absorber layer is further subjected to field stop doping, wherein the field stop doping is formed adjacent to the electric field absorbing layer.
단계적으로 도핑 농도의 차이를 두는 스텝형 도핑층으로 형성된 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.The method of claim 1, wherein the doped absorbing layer
Wherein the stepped doping layer is formed of a stepped doping layer having a stepwise difference in doping concentration.
상기 비흡수층으로부터 상기 전계가 걸린 흡수층 방향으로 도핑 농도가 단계적으로 감소하는 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.3. The method of claim 2, wherein the doped absorbing layer
And the doping concentration is gradually decreased from the non-absorbing layer toward the electric field absorbing layer in which the electric field is applied.
연속적으로 도핑 농도의 차이를 두는 연속형 도핑층으로 형성된 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.The method of claim 1, wherein the doped absorbing layer
Wherein the doping layer is formed of a continuous doping layer continuously changing the doping concentration.
단계적으로 도핑 농도의 차이를 두는 스텝형 도핑층과 연속적으로 도핑 농도의 차이를 두는 연속형 도핑층의 조합으로 이루어진 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.The method of claim 1, wherein the doped absorbing layer
Wherein the doping layer is a combination of a stepped doping layer having a difference in doping concentration stepwise and a continuous doping layer having a difference in doping concentration continuously.
1e16cm-3~ 5e19cm-3의 범위를 갖는 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.The method of claim 1, wherein the doping concentration of the doped absorbing layer
And a range of 1e16 cm- 3 to 5e19 cm- 3 .
InGaAs, GaN, InGaN, GaAs, AlGaAs, AlAs, InP, InAlAs, InAlAsP, InSb, AlSb 중 어느 하나의 물질을 이용하는 것을 특징으로 하는 변형된 도핑 흡수층을 이용한 애벌랜치 포토다이오드.The absorbent article as set forth in claim 1,
Wherein a material selected from the group consisting of InGaAs, GaN, InGaN, GaAs, AlGaAs, AlAs, InP, InAlAs, InAlAsP, InSb and AlSb is used.
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