KR101655268B1 - Micromagnet based extreme ultra-violet radiation source - Google Patents

Abstract

Embodiments include: first and second magnets adjacent to each other in a line of at least 50 magnets; A path adjacent to the line, in which the electron beam can travel and is coupled to the particle accelerator; And a plurality of opposing directions, respectively, to the first and second magnets, respectively, for orienting the first and second magnets in opposite non-volatile orientations, Lt; / RTI > includes a magnetic wiggler including vias. Other embodiments are provided herein.

Description

[0001] MICROMAGNET BASED EXTREME ULTRA-VIOLET RADIATION SOURCE [0002]

Field of the Invention The present invention relates generally to semiconductor processing, and more particularly to an improved extreme ultraviolet (EUV) illumination source.

BACKGROUND OF THE INVENTION An integrated circuit (IC) typically includes many semiconductor features, such as transistors, formed on a semiconductor substrate. The pattern used to form the device may be defined using a process known as photolithography. Using photolithography, light is irradiated through a pattern on the mask to transfer the pattern to a layer of photoresist on the semiconductor substrate. The photoresist can then be developed to remove the exposed photoresist and leave a pattern on the substrate. Various other techniques can then be performed on the exposed portions of the substrate, such as implantation, etching, etc., to form individual devices.

To increase the speed of an IC, such as a microprocessor, more and more transistors are added to the IC. Therefore, the size of the individual devices must be reduced. One way to reduce the size of individual features is to use short wavelength light during the photolithographic process. Where R is the process dependent constant,? Is the wavelength of illumination, NA is the numerical aperture, and R is the resolution of the feature), Raleigh's law (R = k *? / NA, , The reduction of the light wavelength decreases the size of the printed features proportionally.

Extreme ultraviolet (EUV) light (e.g., 13.5 nm wavelength light) can be used to print very small semiconductor features. For example, EUV can be used to print separate features with lengths of 15 to 20 nanometers (nm) and nested features and group structures with 50 nm lines and spaces.

The EUV protons can be generated by the excited atoms of the plasma. One way to generate the plasma is to project the laser beam onto a target (droplet, filament jet) that produces a very dense plasma. When the excited atoms of the plasma return to a stable state, a predetermined energy and thus a predetermined wavelength are emitted. For example, the target may be xenon, tin or lithium.

Features and advantages of embodiments of the present invention will become apparent from the appended claims, the following detailed description of one or more exemplary embodiments, and the corresponding figures.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a micro-magneto-EUV source of an embodiment of the present invention;
2 is a diagram illustrating an on-chip wiggler of an embodiment of the present invention.
3 is a diagram showing a current path for orienting a micro-magnet of an embodiment of the present invention;
4A shows an initial state for an electron beam before entering an embodiment of a wiggler, and Fig. 4B shows a state for an electron beam after leaving an embodiment of a wiggler; Fig.
5 is a view showing a current path for orienting micro-magnets in the embodiment of the present invention.
6 illustrates a portion of an on-chip wiggler of an embodiment of the present invention.
7 illustrates a portion of an on-chip wiggler of an embodiment of the present invention.

Hereinafter, reference will be made to the drawings, and the same structures in the drawings may be provided with the same suffix reference numerals. In order to more clearly illustrate the structure of various embodiments, the figures contained herein are schematic representations of integrated circuit structures. Thus, for example, the actual appearance of an integrated circuit structure fabricated in a photomicrograph may appear differently, still including the claimed structure of the illustrated embodiment. In addition, the drawings may represent only structures useful for understanding the illustrated embodiment. Additional structures known in the art may not be included to maintain clarity of the drawings. &Quot; an embodiment, "" various embodiments," or the like, means that the embodiment (s) described comprise a particular feature, structure, or characteristic, but not all embodiments necessarily include a particular feature, structure, or characteristic. Some embodiments may include some or all of the features described with respect to other embodiments, or may not include any features. Quot ;, " first ", "second "," third ", etc. describe common objects and indicate that different examples of the same object are referenced. Such an adjective does not imply that the described objects should be in a given order, rank, or any other way, either temporally or spatially. "Connected" may indicate that the elements are in direct physical or electrical contact with each other, and "coupled" means that the elements cooperate with one another or interact with each other, but may not be in direct physical or electrical contact or contact . Also, similar or identical numbers may be used to designate the same or similar parts in different drawings, but this does not mean that all figures comprising similar or identical numbers constitute a single or the same embodiment.

As described above, the EUV energies can be generated using plasma-based techniques. However, this technique is problematic due to the large size and high energy content of the equipment needed to excite the atoms used in the plasma-based method. In addition, plasma-based sources suffer from unwanted maximum available output power of about 100 W of EUV.

However, embodiments of the present invention achieve a maximum available output power of about 5,000 W (or greater) of the EUV. 1, this embodiment includes a free electron 106 from a linear linear accelerator (LINAC) 105 to a magnetic wiggler (i.e., an undulator) 107, To produce an EUV 108 that is directed to the reticle 109 and performs photolithography. Because the wiggler is made up of micro-magnets, for example on a semiconductor integrated circuit (IC) chip, the wiggler can generate EUV of short wavelengths. As a result, chip-based wigglers are much smaller than some of the equipment required for plasma-based technology and also require less energy to operate.

2 shows an on-chip wiggler 207 of an embodiment of the present invention. The wiggler 207 includes permanent magnets 210, 211, 212, 213, 214, 220, 221, 222, 223, 224 on the substrate 204 and within the oxide 205 (or other non- do. 3 shows the magnet 311 (corresponding to the magnet 211), the magnet 312 (corresponding to the magnet 212), and the magnet 313 (corresponding to the magnet 213) in more detail. Figures 2 and 3 are discussed below interchangeably.

와 같이 빔 내의 전자의 에너지와 관련되고, 여기서,

이고, v는 전자의 속도(velocity of the electrons)이고, c는 광의 속도(speed of light)이다. 각 전자의 질량(m)의 에너지(E)는

이다.

에 대하여, 에너지(E)는 대략 50 MeV이고, 이러한 에너지에 대한 위글러 기간은 λ_W=270μm이다. λ_W는 거리(360)에 의해 결정되고(예를 들어, 실시예에서, 원하는 λ_W이 270μm이면, 거리(360)는 270μm이다), 이는 온칩 위글러에 적합하도록 상당히 작다. 즉, 이러한 작은 기간 내에 맞추어진 작은 자석은 칩 상의 자기 물질의 퇴적(deposition)으로 구현될 수 있다. 따라서, γ=100 및 13.5nm(즉, EUV)의 λ_L에 대하여,

는

를 나타낸다. 13.5nm의 λ_L는

보다 20,000배 작은 것을 고려하면, 이러한 λ_W는 여기에 기재된 실시예에서 다루는 위글러 등의 온칩 위글러에 적합하다.The wiggler (207) generates a spatially periodic magnetic field (255) having a period (? _W ). The duration lambda _W is the distance between the magnet pitch distance 360 (i.e., the distance from the "start" / "end" of the "N" magnet to the "start" / "end" From the "start" / "end" of the "S" magnet to the "start" / "end" of the next "S" magnet). The wiggler 207 has a number of periods (N _W ), only a portion of which is shown in FIG. Therefore, the length of the wiggler is L _W = N _{W W.} The number of periods should be sufficiently large for the wiggler 207 to transmit enough energy to act on the particle beam 250 to form the EUV beam 108. For example, each series of magnets (magnets 220, 221, 222, 223, 224, including magnets 210, 211, 212, 213, 214 including the first series and a second series) (200 magnets) for a long period of time and appropriately imposes short-wave vibrations on the radiated quantum. The wavelength of the light (lambda _L ) emitted by the free electrons in the beam is

≪ / RTI > is related to the energy of the electrons in the beam,

, V is the velocity of the electrons, and c is the speed of light. The energy (E) of the mass m of each electron is

to be.

, The energy (E) is approximately 50 MeV, and the wiggler duration for this energy is [lambda] _W = 270 [mu] m. _W is determined by distance 360 (e.g., in the embodiment, if the desired _W is 270 [mu] m, distance 360 is 270 [mu] m), which is considerably small to fit on-chip wiggler. That is, a small magnet aligned within such a small period can be implemented by deposition of magnetic material on the chip. Thus, for? _L of? = 100 and 13.5 nm (i.e., EUV)

The

. 13.5nm of λ _L is

Considering 20,000 times smaller than this, this? _W is suitable for an on-chip wiggler such as a wiggler discussed in the embodiments described herein.

)을 유지함에 따라, 전자(250)는 방사를 위해 그 에너지의 약 10%를 전송할 수 있다. 따라서, 전류(I=10mA)로, 빔의 에너지

이고(여기서, e는 전자의 전하의 크기이다) 방사된 파워(P_r)는 P_r=5kW가 되도록 P_b의 10%이다.The electrons 250 oscillate in the magnetic field 255 to emit light. For a sufficient magnetic field of a magnet 255 (B _W ) of about 1T, N _W > 100 (a period less than 10 is shown for convenience and clarity of explanation). When the wiggler 207 is in resonance condition (

, The electron 250 can transmit about 10% of its energy for radiation. Thus, with current (I = 10mA), the energy of the beam

(Where e is the magnitude of the charge of electrons) The radiated power (P _r ) is 10% of P _b so that P _r = 5 kW.

As the magnetic layer is deposited to form magnets 210, 211, 212, 213, 214, 220, 221, 222, 223, 224, etc., the magnetizations of these magnets will be arbitrary. Thus, the magnetic books ("N") and the male ("S") magnetic poles shown in FIG. 2 are randomly located immediately after manufacture. (In N alternating with S), the wiggler 207 is included in the horizontal wire 339 and the vias 230, 231, 232, 233, and 233 are included in the horizontal wire 339. In order to set the magnetization direction and hence the position of the stimulus, 234, 235, 240, 241, 242, 243, 244, 245). As shown in more detail in Figure 3, "wires" 331, 332, 333 (corresponding to vias 231, 232, 233) and 339 provide a current path around the magnets 311, (The "wire" used herein is widely interpreted as a conductive path). The voltage supplied to nodes V1 and V2 may impose a polarity "N" on the magnet 311 by supplying current in one direction 361. [ The voltage supplied to nodes V2 and V3 may impose a polarity "S" on the magnet 312 by supplying current in the opposite direction 362. [ Although not shown in Fig. 3, nodes V1, V2, V3, V4, etc. are coupled to switches (e.g., transistors, multiplexers, etc.) to control the current path to properly direct current to a particular desired magnet And avoid sending current to other unwanted magnets). For example, current may be transferred between nodes V1 and V2 by turning on one or more transistors and turning off one or more transistors, but the current (V3 or V4) It is not transmitted.

Thus, embodiments can include first, second and third magnets (e.g., magnets 211, 212, 213, etc.) adjacent to one another in the first line and additional magnets in the second line And magnets 221, 222, 223, etc. A path through which the electron beam (i.e., electrons) can travel is located between the first and second lines. A first via, such as via 332, (For example, the "N" orientation) between the first via 311 and the second via 311. The second via 333 adjacent to the magnet 312 ) Conveys a current that provides a second magnetic field to the second magnet with a second orientation (e.g., "S" orientation) opposite to the first orientation. As a result, N "and" S "magnet orientation maintains its orientation even when power is no longer provided to the chip on which the magnet resides " Nonvolatile ".

Compared to conventional EUV sources, embodiments require higher power (~ 50 kW vs. 200 kW) for obtaining higher EUV power (up to 5,000 W or more vs. 100 W) and for CO ₂ lasers. Compared to conventional free electron lasers, embodiments provide light with much shorter wavelengths (e.g., 13.5 nm vs. 1000 nm). Moreover, the embodiment is much more compact than the conventional system. For example, the system 100 may utilize a commercially available compact LINAC instead of a large synchrotron accelerator. In addition, the embodiment uses an on-chip magnetic goggle (size of several centimeters) rather than an individual magnet wiggler (several meters in size).

를 통해 위글러의 자계(B_W)를 통해 표현되고,

는 위글러에 대한 파수(wavenumber)이고,

는 광 파워(P)를 통해 표현되고, 상술한 일 실시예에서, 광 파워는 EUV 파장 방사를 생성하기 위하여 5kW이다. 광 파워는

이고, 여기서, ε는 유전 상수이고, EUV 빔 스폿 사이즈(S)=1μm×1μm이고, (E_L)=광파 내의 전계(

)이다. 위글러 내의 전자의 위상의 진화 속도(rate of evolution)는

이고,

는 EUV 광의 파수이다. 광 파에 대하여 전자의 속도로부터 그 위상으로의 변환 인자는

이다. (이하의 궤적에 대응하는) 전자로부터의 에너지의 충분한 추출을 위한 조건은

이고, 산출에 사용되는 파라미터에 대하여 만족된다. 즉, 실시예는 적절한 파장 및 파워를 갖는 EUV를 생성할 수 있다는 것을 보여준다.With regard to the above-mentioned advanced EUV power, the intensity and light fields of the wiggler are respectively the vector potential (A _W ) of the wiggler and the vector potential (A _L ) and the dimensionless vector potential of the light a _W and a _L ). These are

(B _W ) of the wiggler,

Is the wavenumber for the wiggler,

Is represented by optical power (P), and in one embodiment described above, the optical power is 5 kW to produce EUV wavelength radiation. Optical power

Where E is a dielectric constant, and the EUV beam spot size S = 1 μm × 1 μm, (E _L ) = electric field in the wave

)to be. The rate of evolution of the phase of the electrons in the wiggler is

ego,

Is the wave number of the EUV light. The conversion factor from the velocity of the electrons to the phase with respect to the light wave is

to be. The conditions for the sufficient extraction of energy from the electron (corresponding to the following trajectory)

, And it is satisfied with the parameter used for the calculation. That is, the example shows that EUV with appropriate wavelength and power can be generated.

4A shows an electron locus in a free electron laser where the horizontal axis is relative to the light wave with respect to the phase relative to its position relative to its position and the vertical axis is the time derivative of the phase relative to the energy of the electron. 4A is a diagram showing initial conditions for an electron beam before entering an embodiment of a wiggler for three selected values of energy. The phase is uniformly distributed between 0 and 2 because the electrons enter the wiggler at arbitrary positions with respect to the light wave. Figure 4b shows the conditions for an electron beam at three identical values of energy after leaving the embodiment of the wiggler (after the irisulator / wiggler imposes resonance at the EUV wavelength on the particle). These graphs generally show that electrons escape with energy smaller than the energy that the electrons enter and the more negative derivatives of the phase. This corresponds to an electron beam that transmits a significant portion of its energy to the light wave.

Thus, the embodiment has several advantages over conventional systems. For example, as described above, an embodiment of a magnetic wiggler has a size that is orders of magnitude smaller than a conventional source, and the wiggler is implemented as a solid state structure including a micro-magnet. The emitted light wavelength is shorter than the conventional Wiggler source. Also, radiated EUV is obtained by mostly spontaneous release compared to a less probable stimulated release. In an embodiment, this results in only partially coherent light which is desirable for improved lithographic resolution. This embodiment enables EUV lithography and is not likely to be limited by the output power (and may therefore be preferable to other lithography methods).

Examples include first, second and third magnets immediately adjacent to each other in a first line, additional magnets in a second line; A path disposed such that the electron beam is movable and located between the first and second lines and coupled to the particle accelerator; A first via between the first and second magnets for delivering a current providing a first magnetic field having a first orientation to the first magnet; And a second via adjacent the second magnet for delivering a current to the second magnet with a second magnetic field having a second orientation opposite to the first orientation.

Such a device may include a magnetic wiggler or an unwuller. The vias may be filled with Cu, Al, Au, or the like. The first via may deliver a first current in a first direction that provides a first magnetic field having a first orientation (e.g., a polarity "S" toward the viewer) that is dominated by a "right-hand rule." The second via may carry a second current traveling in a second direction opposite to the first direction. A second current that follows the right-hand rule imposes a second magnetic field on the second magnet with a second orientation opposite to the first orientation (e.g., pole "N" toward the viewer).

The first, second and third magnets adjacent to each other "immediately adjacent to each other " may comprise three magnets sequentially arranged like magnets 211, 212 and 213. They need not necessarily be in direct contact with each other but can be separated by an oxide or other non-magnetic material or the like. In the embodiment, no other magnets are interposed between any of the first, second and third magnets (in the case of the magnets 211, 212, 213, etc.). For example, in an embodiment, the second magnet is between the first and third magnets, and there is no other magnet between the first and third magnets.

In another embodiment, the content of the example or the example referred to below is such that the first magnet has a first orientation based on the first magnetic field, the second magnet has a second orientation based on the second magnetic field, Optionally, the second orientation is non-volatile.

For example, conveying the current in proximity to the magnet (i.e., such that the generated magnetic field is sufficient to affect the orientation of the magnet) may be achieved by "programming" the magnet to maintain its orientation after initial programming To produce a " oriented "magnetic field (with a directed orientation) on the magnet.

In another example, the content of the example or the example referred to below may optionally include that the first and second lines of magnets are included on a monolithic substrate.

Thus, the first and second series or line of magnets may share the same chip. This same chip may include a system on a chip that includes one or more controllers (e.g., a signal processor) and may be included on the same chip as the various parts of the particle accelerator, such as LINAC.

In another example, the contents of the example or the example referred to below may optionally include a particle accelerator. Thus, the above example describes embodiments that are not necessarily sold or shipped or included with LINAC, but may be sold, shipped, or included with LINAC in other embodiments.

In another embodiment, the content of the example or the example referred to below is such that (a) the second magnet is between the first and third magnets and no other magnet is present between the first and third magnets, (b) (C) the third magnet has an inner edge immediately adjacent to the second magnet, and (d) the first magnet has an inner edge opposite to the inner edge and the inner edge is adjacent to the second magnet, The distance extending from the outer edge of the magnet to the inner edge of the third magnet is configured to produce a light beam having extreme ultraviolet wavelengths.

In another embodiment, the content of the example or the example referred to below may optionally include that the first line of the magnet comprises a magnetic pitch distance of less than 500 microns.

를 고려하면, 많은 실시예가 가능하다. 특히, LINAC/소스로부터의 더 큰 입력 파워(γ)는 더 큰 λ_W를 허용한다. 따라서, 더 큰 입력 파워는 400, 500, 700, 800, 900, 1000 이상의 마이크론 등의 더 큰 자석 피치를 허용할 수 있다. 이것은 LINAC 또는 빔 소스로의 SoC의 "조정(tailoring)"을 허용한다.For example, the first, second, and third magnets may be adjacent to each other, and distances such as distance 360 are generally equal to magnetic pitch or? _W. lambda _W may be 270 microns, but in other embodiments it may be 5, 10, 20, 50, 100, 150, 200, 250, 350, 400, 500, 700 microns or any point therebetween. E.g,

Many embodiments are possible. In particular, the larger input power (?) From the LINAC / source allows a larger? _W. Thus, a larger input power may allow larger magnet pitches such as 400, 500, 700, 800, 900, microns or more. This allows "tailoring" of the SoC to the LINAC or beam source.

In another embodiment, the content of the example or the example referred to below may optionally include a configuration in which the magnetic pitch distance is configured to emit extreme ultraviolet light having a power greater than 2,500 W.

In another embodiment, the magnetic pitch distance is 400; 450; 500; 1,000; 1,500; 2,000; 3,000; 3,500; 4,000; 4,500; 5,500; Ultraviolet light having a power greater than 6,000 W, for example.

In another embodiment, the contents of the example or the example referred to below may optionally include one in which the magnetic pitch distance is configured to emit extreme ultraviolet light having a wavelength of less than 300 nm.

For example, the magnet pitch distances are configured to emit extreme ultraviolet light having wavelengths of 10, 13.5, 35, 50, 80, 110, 150, 200, 250, 270, 299 nm and below and points therebetween.

In another example, the content of the example or the example referred to below is such that each of the first and second lines of magnets comprises more than 50 magnets and the first line of the magnets has an alternating magnetic orientation As shown in FIG.

In another example, the content of the example or the example referred to below is such that the second line comprises a fourth magnet, the first and fourth magnets are arranged as a complementary pair, and the fourth magnet has a self orientation As shown in FIG.

For example, the complementary pair includes magnets 210 and 220 (211 and 221) and the like. These magnets are "opposite" to each other across the path through which the electrons 250 travel.

In another example, the content of the example or the example referred to below may optionally include the first and second vias being joined together to form a current path adjacent to at least three sides of the second magnet.

For example, vias 332 and 333, along with a horizontal element 339 connecting them, provide current adjacent to three sides of the magnet 312.

In another example, the contents of the example or the example referred to below may optionally include that the first via also carries a current providing a second magnetic field.

For example, vias 332 may selectively conduct current based on currents from or away from directions 361 and 362 (e.g., in any embodiment, asynchronously or in other embodiments simultaneously) . However, other embodiments may have two vias between the first and second magnets, with one via for current tracing the three sides of the first magnet (along direction 361) Is for current tracing the three sides of the second magnet (along direction 362).

There is no way that a via should be formed or a current must be delivered. For example, in an embodiment, the one or more magnets may each have an independent current loop. In FIG. 5, a single current path meanders through the magnets to alternate the "right-hand rule" effect and creates alternating N and S oriented magnets.

In another example, the contents of the example or the example referred to below may optionally include a third via adjacent to the first magnet, wherein the first and third vias are coupled together to form at least three sides of the first magnet Thereby forming an adjacent current path.

For example, both vias 331 and vias 332 are adjacent to magnets 311.

In another example, the contents of the example or the example referred to below may optionally include that the first and third vias connect to each other directly below the first magnet.

For example, vias 331 and 332 connect to each other via wiring (i. E., Wire or line) 339 just below magnet 311.

In another example, the content of the example or the example referred to below may optionally include that the second magnet is between the first and third magnets and no other magnet is present between the first and third magnets.

Further examples include: first and second magnets adjacent to each other in a line of at least 50 magnets; A path through which the electron beam can travel and is adjacent to the line and coupled to the particle accelerator; And a plurality of currents having opposite directions to the first and second magnets, respectively, for directing the first and second magnets with opposite non-volatile orientations, Lt; / RTI > includes a magnetic wiggler including vias.

For example, in Figure 5, some current paths are directed down between two adjacent magnets and the others are directed up between two adjacent magnets. In some embodiments, a single current path between the two magnets can carry a current in a single direction that gives the opposite magnetic orientation on the two adjacent magnets on which the path is formed. Still referring to FIG. 5, this figure shows that a meander current path current can flow through this path. The current may include a first current moving up between the two magnets, and at the same time a second current contained in the current flows down between the two magnets.

In another example, the content of the "additional" example may optionally include a third magnet adjacent to the second magnet, and the distance from the end of the first magnet to the end of the third magnet is & Beam.

In another example, the content of the "additional" example or the example referred to below is that the distance is less than 500 microns (eg, 5, 10, 20, 50, 100, 150, 200, 250, 270 microns) As shown in FIG.

Examples of methods include (a) first, second and third magnets immediately adjacent to each other in a first line, and additional magnets in a second line; (b) a path located between the first and second lines, the electron beam movable and arranged to be coupled to the particle accelerator; (c) a first via between the first and second magnets; (D) providing a wiggler comprising a second via adjacent to the second magnet; Transferring a first current to the first via and providing a first magnetic field having a first orientation to the first magnet based on the first current; And providing a second magnetic field to the second magnet having a second orientation that is opposite to the first orientation, based on the second current, and transmitting a second current to the second via.

In another example, the content of the method example or the example referred to below optionally includes programming a first magnet to have a first orientation in a first magnetic field and a second magnet to have a second orientation in a second magnetic field can do.

In another example, the apparatus includes first, second and third magnets immediately adjacent to each other in a first line, and additional magnets in a second line; (A) a magnet pitch distance of less than 1,000 microns, and (b) a first magnetron positioned adjacent to the first magnetron, Are arranged in an alternating magnetic orientation so as to have opposite magnetic orientations.

Thus, in some embodiments, vias, wires, etc. are not necessarily included. There may be various ways of setting the magnetization in various embodiments. For example, spin torque switching and magnetoelectric switching may be used.

In another example, the contents of "another example" may optionally include that the first line of the magnet comprises a magnet pitch distance of less than 300 microns.

For spin torque switching, some magnetic memories, such as spin transfer torque memory (STTM), use a magnetic tunnel junction (MTJ) for switching and detecting the magnetic state of the memory. One form of STTM, STTRAM (Spin Transfer Torque Random Access Memory), includes an MTJ consisting of a tunneling barrier between the ferromagnetic (FM) layer and the FM layer. The memory is "read" by evaluating the change in resistance (e.g., tunneling magnetoresistance (TMR)) for different relative magnetization of the FM layer. In particular, the MTJ resistance is determined by the relative magnetization direction of the FM layer. If the magnetization direction between the two FM layers is anti-parallel, the MTJ is in a high resistance state. If the magnetization directions between the two FM layers are parallel, the MTJ is in a low resistance state. One FM layer is a "reference layer" or "fixed layer" because its magnetization direction is fixed. The other FM layer is a "free layer" because its magnetization direction is changed by delivering a polarized drive current by the reference layer (for example, the positive voltage applied to the pinned layer rotates the magnetization direction of the free layer, The negative voltage applied to the free layer rotates in the magnetization direction of the free layer in the same direction as the pinned layer).

6 includes an embodiment in which the magnetizations of magnets 610, 611, 612, 613, 614, 615 (and similar complementary magnets in other rows or lines of magnets) are rotated or more generally set do. For example, a non-magnetic layer 616 (e.g., Cu) may be formed on magnets 610, 611, 612, 613, 614, 615 (on non-magnetic material 605 and on ground layer 604) And the stationary FM layer may be on the non-magnetic base layer. In another embodiment, a series of stationary FM layers / portions of layers 610 ', 611', 612 ', 613', 614 ', 615' (in non-magnetic material 605) 611, 612, 613, 614, and 615, and the like. The polarity or orientation of the free FM layer (i.e., magnets 610, 611, 612, 613, 614, 615, etc.)) is set to generate alternating N and S magnets in a manner similar to changing the state within the MTJ of the STTRAM 611 ', 614', 614 ', 615') through the currents supplied by the current paths 680, 681, 682, 683, 684, Change the voltage and change the orientation of the magnet in the free layer). Accordingly, some embodiments may include one or more magnetic bonding to orient the magnet in the wiggler. As shown above, various embodiments do not include vias or current paths between free magnets or under free magnets.

In another embodiment (Fig. 7), the magnetization can be switched by a magnetizing effect. For example, a layer of piezoelectric material portions 710 ', 711', 712 ', 713', 714 ', 715' may be formed in the interior of non-magnetic material 705 and (coupled to ground layer / plane 704) It may be formed adjacent to a ferromagnet such as magnets 710, 711, 712, 713, 714, 715 and the like. In some embodiments, the portion of the piezoelectric material is in direct contact with the ferromagnetic magnet. As the voltage is applied to the piezoelectric layer portion (via the current paths 780, 781, 782, 783, 784, and 785), strain is induced in the piezoelectric layer portion. Because of the strain, the piezoelectric layer portion changes the magnetic anisotropy in the magnet by applying stress to the FM layer magnet. This aligns the magnetization in the direction of the lowest energy.

In another example, the content of "another example" may optionally include that the alternating magnetic orientation is non-volatile.

In another example, the contents of "another example" or the following example may optionally include that the first and second lines of magnets are included on a monolithic substrate.

In another example, the content of "another example" or an example that follows may be applied to the case where a magnetic pitch distance (e.g., a distance 360 less than 300 microns) is less than 300 nm (e. G., 270 nm) And may be configured to radiate radiation.

In another example, the content of "another example" includes first, second and third fixed magnetic layer portions immediately adjacent to each other and on first, second and third magnets respectively; And a non-magnetic layer between the first, second and third fixed magnetic layer portions and between the first, second and third magnets, wherein the alternating magnetic orientation comprises a first, a second and a third fixed magnetic layer Quot; is set based on the corresponding alternating voltage supplied to the " part "

In another example, the content of "another example" may optionally include first, second and third portions of piezoelectric material that are in direct contact with the first, second and third magnets, , And the corresponding alternating voltage induced strains induced in the second and third piezoelectric material portions.

As used herein, a "line" need not necessarily be entirely straight, but may for example be curved or undulating in some manner. For example, a magnet in a line need not necessarily be perfectly linearly aligned. Some magnets may be offset from other magnets in the same "line ".

The foregoing description of the embodiments of the present invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. This description and the following claims are intended to cover such modifications as would be apparent to one of ordinary skill in the art to which the present invention relates not only to the left, the right, the top, the bottom, the over, under, Lower, lower, lower, first, second, and so on. For example, the term relative vertical position designation refers to the situation where the device side (or active side) of the substrate or integrated circuit is the "top" side of the substrate, Lower "side in a standard ground frame and is still within the meaning of the term" phase ". The term " on " hereinbefore (including within the claims) means that the first layer of the second layer "on " does not directly contact the second layer and directly contacts the second layer A third layer or other structure may be present between the first layer and the second layer on the first layer. Embodiments of the devices or articles described herein may be manufactured, used, or shipped in a number of locations and orientations. Those skilled in the art will recognize that many modifications and variations are possible in light of the above teachings. Those skilled in the art will recognize various equivalent combinations and substitutions of various components shown in the figures. Therefore, the scope of the present invention is not limited by these detailed descriptions, but rather by the appended claims.

207: Wiggler
210, 211, 212, 213, 214, 220, 221, 222, 223, 224: permanent magnet
311, 312, 313: magnets

Claims (25)

A first magnet, a second magnet and a third magnet adjacent to each other in a first line, and further magnets in a second line;
A path between the first line and the second line in which the electron beam is movable and is arranged to be coupled to a particle accelerator;
A first via between the first magnet and the second magnet for delivering a current to the first magnet with a first magnetic field having a first orientation; And
And a second vias adjacent to said second magnet for delivering a current to said second magnet with a second magnetic field having a second orientation opposite to said first orientation,
/ RTI > 2. The method of claim 1, wherein the first magnet has the first orientation based on the first magnetic field and the second magnet has the second orientation based on the second magnetic field, And the second orientation is non-volatile. 3. The apparatus of claim 2, wherein the first line and the second line of magnets are formed in an integrated circuit chip. 3. The apparatus of claim 2, comprising the particle accelerator. The method of claim 2, wherein: (a) the second magnet is between the first magnet and the third magnet, and there are no other magnets between the first magnet and the third magnet; (b) (C) said third magnet has an inner edge immediately adjacent to said second magnet, said third edge having an outer edge opposite said inner edge, said inner edge being adjacent to said second magnet, (d) the distance from the outer edge of the first magnet to the inner edge of the third magnet is configured to produce a light beam having an extreme ultraviolet wavelength. 3. The apparatus of claim 2, wherein the first line of magnets comprises a magnet pitch distance of less than 500 microns. 7. The apparatus of claim 6, wherein the magnet pitch distance is configured to emit extreme ultraviolet light having a power greater than 400W. 7. The apparatus of claim 6, wherein the magnet pitch distance is configured to emit extreme ultraviolet light having a wavelength less than 300 nm. 3. The method of claim 2, wherein each of the first line and the second line of magnets comprises more than 50 magnets, and wherein the first line of magnets has an alternating magnetic orientation alternating magnetic orientations. 3. The magnetic sensor of claim 2, wherein the second line comprises a fourth magnet, the first magnet and the fourth magnet being arranged in a complementary pair, and the fourth magnet having a magnetic orientation opposite to the first orientation / RTI > 3. The apparatus of claim 2, wherein the first via and the second via are coupled together to form a current path adjacent to at least three sides of the second magnet. 3. The apparatus of claim 2, wherein the first via also provides the second magnetic field. 3. The device of claim 2, further comprising a third via adjacent the first magnet, wherein the first via and the third via are coupled together to form a current path adjacent to at least three sides of the first magnet . 14. The apparatus of claim 13, wherein the first via and the third via connect to each other directly beneath the first magnet. 3. The apparatus of claim 2 wherein the second magnet is between the first magnet and the third magnet and no other magnets are present between the first magnet and the third magnet. As a magnetic wiggler,
A first magnet and a second magnet adjacent to each other in a line of at least 50 magnets;
A path through which the electron beam can move and which is adjacent to the line and which is coupled to the particle accelerator; And
A first magnet and a second magnet for directing the first magnet and the second magnet to opposite non-volatile orientations by providing a plurality of currents having opposite directions to the first magnet and the second magnet, respectively, A plurality of vias on a plurality of sides of each of the magnets
Wherein the self- 17. The apparatus of claim 16, further comprising a third magnet adjacent the second magnet, the distance extending from the end of the first magnet to the end of the third magnet being configured to produce a light beam having an extreme ultraviolet wavelength Self Wiggler. 18. The magnetic wiggler of claim 17, wherein the distance is less than 500 microns. (a) a first magnet, a second magnet and a third magnet adjacent to each other in a first line, and further magnets in a second line; (b) a path disposed between the first line and the second line, the electron beam being movable and coupled to the particle accelerator; (c) a first via between the first magnet and the second magnet; And (d) a second via adjacent the second magnet;
Transferring a first current to the first via and providing a first magnetic field having a first orientation to the first magnet based on the first current; And
Delivering a second current to the second via and providing a second magnetic field to the second magnet based on the second current, the second magnetic field having a second orientation opposite to the first orientation
≪ / RTI > 20. The method of claim 19,
Programming the first magnet to have the first orientation using the first magnetic field; And
Programming the second magnet to have the second orientation using the second magnetic field;
≪ / RTI > A first magnet, a second magnet and a third magnet adjacent to each other in a first line, and further magnets in a second line; And
A path between the first line and the second line, in which the electron beam can move and is arranged to be coupled to the particle accelerator
Lt; / RTI >
Wherein said first line of magnets comprises (a) a magnetic pitch distance of less than 1,000 microns, (b) arranged in alternating magnetic orientations such that adjacent magnets have opposite magnetic orientations,
Wherein the first line and the second line of magnets are contained on a monolithic substrate. 22. The apparatus of claim 21, wherein the magnet pitch distance is less than 300 microns. 22. The apparatus of claim 21, wherein the magnetic pitch distance is configured to emit extreme ultraviolet light having a wavelength less than 300 nm. 22. The method of claim 21,
A first fixed magnetic layer portion, a second fixed magnetic layer portion and a third fixed magnetic layer portion adjoining each other immediately adjacent to and over the first magnet, the second magnet and the third magnet, respectively; And
The nonmagnetic layer between the first fixed magnetic layer portion, the second fixed magnetic layer portion and the third fixed magnetic layer portion and the first magnet, the second magnet and the third magnet,
/ RTI >
Wherein the alternating magnetic orientations are set based on corresponding alternating voltages supplied to the first fixed magnetic layer portion, the second fixed magnetic layer portion and the third fixed magnetic layer portion. 22. The method of claim 21,
A first piezoelectric material portion, a second piezoelectric material portion and a third piezoelectric material portion directly contacting the first magnet, the second magnet and the third magnet,
Wherein the alternating magnetic orientations are set based on corresponding alternating voltage induced strains induced in the first piezoelectric material portion, the second piezoelectric material portion and the third piezoelectric material portion.

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