KR101654274B1 - 광섬유 기판 처리 - Google Patents

광섬유 기판 처리 Download PDF

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Publication number
KR101654274B1
KR101654274B1 KR1020117027743A KR20117027743A KR101654274B1 KR 101654274 B1 KR101654274 B1 KR 101654274B1 KR 1020117027743 A KR1020117027743 A KR 1020117027743A KR 20117027743 A KR20117027743 A KR 20117027743A KR 101654274 B1 KR101654274 B1 KR 101654274B1
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KR
South Korea
Prior art keywords
substrate
semiconductor substrate
optical
processing system
light
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KR1020117027743A
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English (en)
Korean (ko)
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KR20110138415A (ko
Inventor
스티븐 모파트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20110138415A publication Critical patent/KR20110138415A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Radiation Pyrometers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020117027743A 2009-04-20 2010-04-19 광섬유 기판 처리 Active KR101654274B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17101109P 2009-04-20 2009-04-20
US61/171,011 2009-04-20

Publications (2)

Publication Number Publication Date
KR20110138415A KR20110138415A (ko) 2011-12-27
KR101654274B1 true KR101654274B1 (ko) 2016-09-06

Family

ID=42981299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117027743A Active KR101654274B1 (ko) 2009-04-20 2010-04-19 광섬유 기판 처리

Country Status (7)

Country Link
US (1) US8372667B2 (https=)
JP (1) JP5597251B2 (https=)
KR (1) KR101654274B1 (https=)
CN (1) CN102405514B (https=)
SG (1) SG174859A1 (https=)
TW (1) TWI435389B (https=)
WO (1) WO2010123829A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5964626B2 (ja) * 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
WO2013148066A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Laser noise elimination in transmission thermometry
DE102012221080A1 (de) * 2012-11-19 2014-03-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Schicht auf einem Oberflächenbereich eines elektronischen Bauelements
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置
US9343307B2 (en) 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers
US10053777B2 (en) 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
US9698041B2 (en) * 2014-06-09 2017-07-04 Applied Materials, Inc. Substrate temperature control apparatus including optical fiber heating, substrate temperature control systems, electronic device processing systems, and methods
JP6608923B2 (ja) * 2014-07-02 2019-11-20 アプライド マテリアルズ インコーポレイテッド 溝に経路指定された光ファイバーによる加熱を含む温度制御装置、基板温度制御システム、電子デバイス処理システム、及び処理方法
CN106471609B (zh) * 2014-07-02 2019-10-15 应用材料公司 用于使用嵌入光纤光学器件及环氧树脂光学散射器的基板温度控制的装置、系统与方法
JP2017528922A (ja) * 2014-07-03 2017-09-28 アイピージー フォトニクス コーポレーション ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
WO2017165550A1 (en) * 2016-03-22 2017-09-28 Tokyo Electron Limited System and method for temperature control in plasma processing system
US10973088B2 (en) 2016-04-18 2021-04-06 Applied Materials, Inc. Optically heated substrate support assembly with removable optical fibers
KR102312866B1 (ko) * 2019-12-13 2021-10-14 세메스 주식회사 박막 식각 장치
JP7505332B2 (ja) * 2020-08-28 2024-06-25 中国電力株式会社 気中開閉器の浸水判定装置及び浸水判定方法
US12531217B2 (en) * 2021-03-31 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Laser array system for improved local CD uniformity

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070212859A1 (en) 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate

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JPH04142030A (ja) * 1990-09-12 1992-05-15 Ricoh Co Ltd 半導体膜の製造方法
JP4401540B2 (ja) * 2000-06-30 2010-01-20 浜松ホトニクス株式会社 レーザー装置及びこれを用いた光信号増幅装置
JP2002359208A (ja) * 2001-06-01 2002-12-13 Matsushita Electric Ind Co Ltd レーザアニール装置
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
US7498066B2 (en) * 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
KR20030095313A (ko) 2002-06-07 2003-12-18 후지 샤신 필름 가부시기가이샤 레이저 어닐링장치 및 레이저 박막형성장치
JP2004064066A (ja) * 2002-06-07 2004-02-26 Fuji Photo Film Co Ltd レーザアニール装置
FI20045308L (fi) * 2004-08-26 2006-02-27 Corelase Oy Optinen kuituvahvistin, jossa on vahvistuksen muotoerottelu
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4854244B2 (ja) 2005-09-20 2012-01-18 東芝モバイルディスプレイ株式会社 レーザアニール方法およびその装置
JP4698460B2 (ja) * 2006-03-27 2011-06-08 オムロンレーザーフロント株式会社 レーザアニーリング装置
JP5354969B2 (ja) * 2008-06-17 2013-11-27 ミヤチテクノス株式会社 ファイバレーザ加工方法及びファイバレーザ加工装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070212859A1 (en) 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate

Also Published As

Publication number Publication date
WO2010123829A3 (en) 2011-01-13
US20100267173A1 (en) 2010-10-21
JP5597251B2 (ja) 2014-10-01
SG174859A1 (en) 2011-11-28
CN102405514A (zh) 2012-04-04
TW201106428A (en) 2011-02-16
TWI435389B (zh) 2014-04-21
US8372667B2 (en) 2013-02-12
WO2010123829A2 (en) 2010-10-28
KR20110138415A (ko) 2011-12-27
CN102405514B (zh) 2014-07-16
JP2012524422A (ja) 2012-10-11

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