KR101649746B1 - A method for manufacturing artificial joint materials - Google Patents

Abstract

The present invention is designed to efficiently deposit a ceramic thin film on a joint surface layer of a metal material, which is a counter material, for the purpose of reducing the amount of wear of a polymer material for an artificial joint. In order to further reduce the wear amount of the polymer material, A method for depositing a ceramic thin film, and a method and apparatus for performing ion implantation at the same time as deposition of a thin film to improve a bonding force between a ceramic thin film and a metal material.

Description

Technical Field [0001] The present invention relates to a method for manufacturing an artificial joint,

The present invention relates to a method for reducing the amount of wear of a polymer material for artificial joints, which is a relative material of a metal material, which is generated by driving an artificial joint on a contact surface of an artificial joint by depositing a ceramic thin film on a surface of a metal material, And a device therefor.

In addition, before the thin film is deposited, a process of ionizing the activation gas on the surface of the metal material to ionize the surface of the metal material is introduced to form a partial second ceramic phase on the surface of the metal material, In order to increase the bonding force between the metal material and the ceramic thin film, a dynamic ion mixing process is introduced to reduce the amount of wear of the polymer material and simultaneously perform ion implantation and thin film deposition at the initial stage of the thin film deposition, The present invention relates to a method for reducing the wear amount of a polymer material for joints and a device therefor.

Recently, the necessity of research for prolonging the life of artificial joints is becoming serious due to the increase of the elderly population and the tendency of the artificial joint practitioner to be aged. This artificial joint is an artificial substitute that performs joint motion by being inserted into the human body when a joint is damaged due to an accident or a disease. In the case of the artificial joint of the artificial joint, a liner and a head Do. Currently, products made of a combination of ceramics, metals, and polymers are mainly made of a metal (Co-Cr-Mo alloy, Ti-6Al-4V alloy) head and a polymer liner.

The artificial joint composed of the metal head and the polymer liner is advantageous in shock absorption due to the toughness of the metal head, but has a disadvantage in that the wear resistance is lower than that of the ceramic head, and metal ions are eluted from the body during long-term use.

The artificial joint consisting of ceramic head and polymer liner has the advantage that ceramic head has excellent abrasion resistance and chemical stability, but it has a disadvantage that it can be broken due to impact due to low toughness and also difficult to manufacture.

Ultrahigh molecular weight polyethylene, which is mainly used as a liner material in an artificial joint made of a metal head and a polymer liner or a ceramic head and a polymer liner, is excellent in mechanical properties, low coefficient of friction, and excellent biocompatibility. However, as a result of joint movement, debris from abrasion of ultrahigh molecular weight polyethylene material activates osteoclasts and causes osteolysis and tissue necrosis, so re-operation can not be avoided. Since the life span of the artificial joint is about 10 years, many of the transplant recipients are reapplied. In the case of re-surgery, the cost and the pain are accompanied by a lot of pain. Research has been actively carried out to increase the life expectancy of artificial joints by reducing the amount of wear.

US Pat. No. 5,780,119 discloses a method of coating a silicon (Si) or germanium (Ge) on a cobalt chromium (CoCr) alloy which is a relative material of ultrahigh molecular weight polyethylene (UHMWPE) . ≪ / RTI > Here, silicon or germanium is deposited as a buffer layer through an IBA (Ion Beam Assisted Deposition) process so as to have a strong bonding force between the cobalt chromium alloy and the DLC coating.

Also, as disclosed in Korean Patent No. 10-0920275, the amount of wear of crosslinked polyethylene (XLPE) is controlled through a zirconium oxide coating on the surface of an artificial joint formed of zirconium or zirconium alloy, which is a relative material of crosslinked polyethylene (XLPE) or ultra high molecular weight polyethylene (UHMWPE) There is a way to reduce.

The method of reducing the amount of wear of the polyethylene material by depositing the ceramic thin film on the metal material has the advantage that the excellent ductility of the metal material and the excellent abrasion resistance and chemical stability of the ceramic material can be applied at the same time while the artificial joint is used for a long time , There is a problem that the peeling phenomenon occurs due to a low bonding force between the ceramic thin film and the metal material, thereby rapidly increasing the wear amount of the polyethylene material as a counterpart material.

In addition, the local deformation of the material occurs due to the load applied when the artificial joint is used. At this time, peeling occurs between the metal material and the ceramic thin film, or cracks occur in the ceramic thin film. Therefore, the bonding force between the deposited ceramic thin film and the base material is a very important factor for improving the durability of the artificial joint.

The present invention relates to a method for efficiently depositing a ceramic thin film on a joint surface layer of a metal material, which is a counter material, in order to reduce the amount of wear of a polymer material for an artificial joint. The method includes performing ion implantation before depositing a thin film, And to a method and apparatus for performing ion implantation at the same time as deposition of a thin film to improve a bonding force between a ceramic thin film and a metal material.

Therefore, the present invention utilizes the toughness of the metal material, the abrasion resistance and the chemical stability of the ceramic material by depositing the ceramic thin film on the surface of the metal material, which is a counterpart material, in order to reduce the wear amount of the polymer material for artificial joint, , Oxygen and carbon are injected into the surface of the metal material to form a partial second ceramic phase on the surface of the metal material to further reduce the abrasion resistance of the polymer material for artificial joints, By simultaneously performing the implantation and the thin film deposition, a wide interface having a gradual compositional change between the metal material and the ceramic material is formed, thereby increasing the bonding force between the metal material and the ceramic thin film, thereby reducing the wear amount of the polymer material for the artificial joint, The goal is to increase the life span.

The present invention is designed to efficiently deposit a ceramic thin film on a joint surface layer of a metal material, which is a counter material, for the purpose of reducing the amount of wear of a polymer material for an artificial joint. In order to further reduce the wear amount of the polymer material, A method for depositing a ceramic thin film, and a method and apparatus for performing ion implantation at the same time as deposition of a thin film to improve a bonding force between a ceramic thin film and a metal material.

That is, a magnetron evaporation source, which is commonly used as an evaporation source for thin film deposition, is made of titanium (Ti), which is excellent in biocompatibility and is combined with nitrogen, oxygen, and carbon to form a ceramic thin film having high hardness value, excellent abrasion resistance, Ti), or niobium (Nb) element is deposited to deposit a ceramic thin film and a high voltage pulse is applied to the sample to enable efficient ion implantation before deposition of the thin film or deposition of the thin film do.

Further, by performing ion implantation process before the thin film is deposited, the amount of wear of the polymer material for the artificial joint can be further reduced by forming a partial second ceramic phase on the surface of the metal material. In addition, By performing the ion implantation at the same time, it is possible to increase the adhesion between the ceramic thin film and the metal material by forming a wide interface having a gradual composition, thereby reducing the amount of wear of the polymer material for artificial joints.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and embodiments.

FIG. 1 is a schematic structural view of a device capable of deposition and ion implantation of a ceramic thin film according to the present invention. (1) denotes a vacuum chamber for plasma ion implantation and deposition of a ceramic thin film, and (3) denotes an RF antenna for plasmatizing a gas introduced into a vacuum chamber. (4) shows a sputtering target mounted on a magnetron evaporation source for depositing a ceramic thin film. (2) is a power supply device for applying a direct current, alternating current or pulse direct current (3) to the sputtering target (4) mounted on a magnetron evaporation source. (5) shows the plasma generated by the magnetron evaporation source (4), and (6) shows the sample mounted on the conductive sample mounting table (7). (8) means a gas flow rate regulating device for regulating the flow rate of the used gas (9) used for plasma generation. Reference numeral 12 denotes a high voltage pulse power source for applying a negative high voltage pulse 11 to the conductive sample mounting table 7. (10) is a vacuum pump for maintaining the vacuum of the vacuum chamber, and (13) means that the vacuum chamber is electrically grounded. (14) is a magnet located on the wall surface of the vacuum tank, and (15) is lead shielding for shielding X-rays generated in the vacuum chamber.

The principles of the plasma ion implantation and the deposition of the ceramic thin film according to the present invention are as follows. The sample 6 is mounted on the conductive sample mounting table 7 located inside the vacuum chamber 1 and the degree of vacuum inside the vacuum chamber 1 is measured using a vacuum pump 10 using a vacuum pump 10 Exhaust to the high vacuum region. Then, a gas for generating a plasma, not necessarily limited thereto, but not, argon (Ar), nitrogen (N _2), oxygen (O _2), methane (CH ₄₎ gas (9) the gas flow rate control, such as apparatus (8) to regulate the pressure inside the vacuum chamber to a pressure of 0.5 mTorr to 5 mTorr, although not necessarily limited thereto. For this reason, it is difficult to generate plasma at a low pressure of 0.5 mTorr or less. On the other hand, at a pressure higher than 5 mTorr, energy loss of accelerated ions is very high due to frequent collision between accelerated ions and surrounding gas particles Because. When the pressure inside the vacuum chamber is stabilized after the use gas is introduced, RF power is applied to the RF antenna 3 inside the vacuum chamber to form a plasma of the introduced gas. Thereafter, the plasma ion implantation process is performed by applying a negative high voltage pulse 11 to the conductive sample mounting table 7 using the high voltage pulse power source 12. After the ion implantation process, an inert gas for sputtering the sputtering target 4 mounted on the magnetron evaporation source and an element for sputtering in the target are combined with an activation gas for forming the ceramic thin film in the vacuum chamber for deposition of the ceramic thin film Lt; / RTI > When the pressure inside the vacuum chamber is stabilized after the use gas is introduced, DC, AC, or pulsed DC power (2) is applied to the sputtering target (4) mounted on the magnetron deposition source attached to the upper end of the vacuum chamber, The material sputtered from the evaporation source and the gas introduced into the vacuum chamber meet and a ceramic thin film is deposited on the sample 6 placed on the vacuum chamber internal conductive sample mounting base.

Further, when a negative (-) high voltage pulse 11 is applied to the conductive sample mounting table 7 at the initial stage of the deposition to perform the ion implantation process simultaneously with the deposition of the thin film, a gradual compositional change between the ceramic thin film and the metal material A dynamic ion mixing process for increasing the bonding force between the ceramic thin film and the metal material can be performed.

As the deactivating gas used for sputtering the sputtering target 4 mounted on the magnetron evaporation source in the ion implantation process and the thin film deposition process, argon (Ar) gas is mainly used although it is not limited thereto. Is used to form a partial second ceramic phase by implanting on the surface of the metal material in the ion implantation process to form a partial second ceramic phase or to combine with elements sputtered in a ceramic thin film deposition process to form a ceramic element As the activation gas, a gas such as nitrogen (N ₂ ), methane (CH ₄ ), or oxygen (O ₂ ) is used, though not limited thereto. This gas is converted into plasma and ion- It is easy to form a ceramic phase, and it is easy to form a ceramic thin film by meeting an element sputtered from an evaporation source used in a deposition process.

The operating frequency, pulse width and negative pulse high voltage of the high voltage pulse 11 applied to the conductive sample mounting table 7 in the above plasma ion implantation step are not limited to 0.1 Hz to 500 Hz , The pulse width is 1 usec to 200 usec, and the negative (-) pulse high voltage is -1 kV to -100 kV. In the case of the pulse width, the plasma ion implantation is not effectively performed with a short pulse width of 1 usec or less, and when operated with a long pulse of 200 usec or more, a high negative voltage (-) applied to the conductive sample mounting table 7 The plasma sheath is excessively expanded and contacts the wall of the vacuum chamber 1, and plasma is likely to be turned off. As the time for applying a high voltage to the sample mounting table becomes longer, the possibility of generating an arc in the sample mounting table 7 Is high. In addition, with a low voltage of -1 kV or less, there is a disadvantage that the depth of ions to be injected into the surface of the sample is too shallow, and the production of a high-voltage pulse power supply device 12 of -100 kV or more is difficult.

The DC power density used in the thin film deposition process is not limited to this, but it is set to a value of 1 W / cm ² to 50 W / cm ² . This is because the sputtering speed from the sputtering target 4 mounted on the magnetron evaporation source is very slow with a direct current power of 1 W / cm ² or less, It is difficult to use the value of W / cm < ² > or more because of difficulty in manufacturing the magnetron evaporation source.

Features of the plasma ion implantation process for the present invention are as follows.

After the inside of the vacuum chamber is maintained at a high level of vacuum, an activation gas for ion implantation is injected into the vacuum chamber, an RF current is applied to the antenna attached to the top of the vacuum chamber to ionize the activation gas, (-) high-voltage pulse is applied to the conductive sample mounting table on which the ion exchange membrane is mounted, thereby effectively accelerating the activated gas ions, thereby allowing ion implantation on the surface of the sample. Therefore, it is advantageous that uniform ion implantation can be performed on a three-dimensional sample, and a high technology competitiveness can be ensured by a high injection rate as a whole.

The features of the equipment used in the present invention are as follows.

Since the ion implantation process and the deposition process can be continuously performed in one vacuum chamber, it is possible to prevent contamination due to impurities or gases introduced from the outside. In the initial stage of the deposition process, the thin film deposition process and the ion implantation process Can be performed at the same time so that a wide interface in which the composition gradually changes at the interface between the thin film and the metal base material can be formed and the effect of increasing the bonding force between the ceramic thin film and the metal base material can be obtained have.

According to the present invention, a material for an artificial joint including both ductility of a metal material and excellent wear resistance of a ceramic material and stability in a human body is manufactured by depositing a ceramic thin film on a metal material through a magnetron sputtering process, The effect of reducing the amount of wear of the material is obtained and the surface of the metal material is modified by injecting the activating gas ions onto the surface of the metal material before the deposition of the ceramic thin film to obtain the effect of further reducing the wear amount of the polymer material for artificial joints. In addition, by introducing a dynamic ion mixing process that simultaneously performs the ion implantation process and the deposition process at the initial stage of deposition, the bonding force between the ceramic thin film and the metal material is increased, and the joint force It is possible to suppress an abrupt increase in wear of the polymer material.

FIG. 1 is a schematic view of an apparatus capable of performing thin film deposition simultaneously with plasma ion implantation according to the present invention.
FIG. 2 is a graph showing the results of a dynamic ion mixing process in which (a) a niobium nitride thin film produced through a simple deposition process and (b) an ion implantation process and a deposition process are simultaneously performed at the initial stage of deposition, X-ray photoelectron spectroscopy (XPS) results of niobium nitride thin films prepared by introducing Cu (II)
FIG. 3 is a graph showing the results of (A) the Co-Cr-Mo alloying material which is currently used as the material for artificial joints, (B) the Ni-Nb thin film on the Co- (C) Co-Cr-Mo alloy (C) was deposited on the Co-Cr-Mo alloy with the applied voltage of 30 kV. The result of wear test showing the wear amount of ultrahigh molecular weight polyethylene on a sample of niobium nitride thin film deposited after nitrogen ion implantation with an applied voltage of 50 kV on alloy material.

Hereinafter, examples of the present invention will be described. However, the following examples are provided to aid understanding of the present invention, and the scope of the present invention is not limited to these examples.

[Example 1]

The ion implantation and ceramic thin film deposition experiments for improving the wear resistance of artificial joint materials according to the method specified in the present invention were divided into the following three processes.

The first is the step of implanting nitrogen (N ₂₎ ion to a metal material surface before the ceramic thin film (in this embodiment 1, the nitride niobium) deposition, Second, also deposit a ceramic thin film and at the same time, nitrogen (N ₂₎ and A dynamic ion mixing process in which an ion in an argon (Ar) plasma is injected into a surface of a metal material to form an intermixed layer having a gradual compositional change between the metal sample and the ceramic thin film, The third step is to deposit a ceramic thin film.

As the sputtering target mounted on the magnetron evaporation source, a niobium sputtering target having a diameter of 76.2 mm (3 inches), a thickness of 6.35 mm (1/4 inch) and a purity of 99.95% or more was used.

As a substrate material for depositing a ceramic thin film, a cobalt-chromium-molybdenum alloy (Co-Cr-Mo alloy), which is currently used most as artificial joint material, is processed into a disc having a diameter of 30 mm and a thickness of 10 mm After polishing the surface to a level of 1 μm, it was immersed in a solution of acetone and alcohol and ultrasonically cleaned.

Thereafter, the sample was mounted on a conductive sample mounting table in a vacuum chamber, and then the vacuum chamber was evacuated to a vacuum degree of 5 10 ^-6 Torr, and then nitrogen gas was introduced to maintain the vacuum degree at 0.7 mTorr. Thereafter, RF power of 200 Watt was applied to the aluminum antenna attached to the top of the vacuum chamber to generate inductively coupled plasma, and negative high voltage pulses of 30 kV and 50 kV were applied to the conductive sample mount, The internal nitrogen ions were injected into the surface of the metal sample. In this case, the frequency of the negative high voltage pulse was 100 Hz, the pulse width was 40 usec, the process time was 15 minutes for a negative high voltage pulse of 30 kV, and 8 minutes for a negative high voltage pulse of 50 kV .

After the ion implantation process, the gas flow was stopped and the vacuum degree of the vacuum chamber was again exhausted to 5 ㅧ 10 ^-6 Torr. Then, nitrogen (N ₂ ) and argon (Ar) gas were mixed in the vacuum chamber, Was maintained at 1.8 mTorr. At this time, the argon (Ar) gas is an inert gas that is introduced to sputter the niobium target mounted on the magnetron evaporation source, and the nitrogen (N ₂ ) gas reacts with the sputtered niobium (Nb) Is an activating gas that is introduced to form. Thereafter, in the same manner as in the ion implantation process, an inductively coupled plasma of an introduced gas was generated by applying 200 Watt of RF power to the antenna, and DC power of 600 W (about 13 W / cm ² ) was applied to the magnetron evaporation source (NbN) thin film is formed by forming a niobium (Nb) plasma by a magnetron evaporation source, and a negative high voltage pulse of 30 kV is applied to the conductive sample mounting table to remove argon and nitrogen Ion implantation was carried out for 5 minutes. At this time, the frequency of the applied negative high voltage is 100 Hz, and the pulse width is 40 usec, which is the same as the above nitrogen ion implantation process. X-ray photoelectron spectroscopy (XPS) was performed on the intermixed layer, which is formed through the dynamic ion mixing process and has a gradual composition change between the ceramic thin film and the metal sample. Respectively. As shown in FIG. 2, the interface of the sample generated through the dynamic ion mixing process has a much wider interface than the interface of the sample formed through the simple deposition process without using the dynamic ion mixing process Can be confirmed.

After the dynamic ion mixing process, a ceramic thin film deposition process was performed. The ceramic thin film deposition process was carried out with a dynamic ion mixing process and a continuous process. In the dynamic ion mixing process, without changing the incoming gas, the RF power applied to the RF antenna, and the DC power applied to the magnetron evaporation source, And only the negative high voltage pulse applied to the mounting table was removed.

The abrasion test of ultrahigh molecular weight polyethylene, which is a relative material, was carried out using a metal sample on which a niobium nitride (NbN) thin film manufactured by the above method was deposited as follows.

The ultrahigh molecular weight polyethylene (GUR-4150, molecular weight: 9.2 million, diameter 7.5 mm hemispherical pin shape) used in the abrasion test was used for the test after finishing the diameter of the fin tip to 450 μm. This is to prevent an erroneous wear test result from infinite load due to instantaneous point contact at the beginning of wear test.

Distilled water was used as lubricating oil. The ultra high molecular weight polyethylene was rotated at a speed of 100 rpm around the lower rotating axis while the niobium nitride thin film deposited on the upper side was fixed, and the wear characteristics test was carried out for 1000 minutes. During the wear test, the load was fixed at 250 gf, and the wear amount was calculated by measuring the worn cross section.

As shown in FIG. 3, when the abrasion test was carried out using a sample in which a niobium nitride (NbN) thin film was deposited, the most widely used cobalt-chromium-molybdenum alloy (Co-Cr-Mo alloy) It is confirmed that the abrasion amount of ultrahigh molecular weight polyethylene, which is a relative material, is remarkably lower than that when the abrasion test is conducted. In addition, it can be seen that the sample subjected to the nitrogen ion implantation before the deposition of the niobium nitride film has a relatively lower amount of ultra-high molecular weight polyethylene wear.
In one embodiment of the present invention, there is provided a method of reducing the amount of wear of a polymer material for artificial joints by depositing a ceramic thin film (or a thin film formed by mixing ceramic and metal) on a metal material used as an artificial joint material do.
According to an embodiment of the present invention, there is provided a method of reducing the wear amount of a polymer material for an artificial joint by injecting ions of an activation gas onto a surface of a metal material.
In one embodiment of the present invention, a dynamic ion mixing process, which simultaneously performs an ion implantation process and a thin film deposition process, is introduced at the initial stage of deposition of a ceramic thin film (or a thin film formed by mixing a ceramic and a metal) Thereby reducing the amount of wear of the polymer material for artificial joints.
In one embodiment of the present invention, there is provided a method of manufacturing a material that reduces the wear amount of a polymer material for an artificial joint, which is a relative material, by mixing the processes specified in the three items.
In an embodiment of the present invention, a magnetron evaporation source equipped with a sputtering target in a vacuum chamber and a conductive sample mounting base on which a sample can be mounted are installed, An ion implantation process and a thin film deposition process can be performed simultaneously or sequentially.
According to an embodiment of the present invention, there is provided a method of fabricating a semiconductor device, comprising: placing a sample on a conductive sample mounting table in a vacuum chamber using a device capable of simultaneously performing plasma ion implantation and thin film deposition; Evacuating the vacuum chamber at a high vacuum using a pump; In order to remove the oxide on the surface of the mounted sample before the whole process, argon gas is injected into the vacuum chamber, and then an argon plasma is generated, and then a negative high voltage pulse, Applying AC power to sputter the surface of the sample; Supplying a gas to be used for thin film deposition or ion implantation into a vacuum chamber to maintain the pressure; Applying RF power to an RF antenna attached to the top of the vacuum chamber to plasmaize the introduced gas; Applying negative (-) high voltage pulses to the conductive sample mounting table in the vacuum chamber to accelerate the ions in the plasma and inject them into the mounted sample; A sputtering target is sputtered by applying DC, AC, or pulsed DC power to a magnetron deposition source equipped with a sputtering target to deposit a ceramic thin film (or a thin film mixed with ceramic and metal) on a sample mounted on a conductive sample mounting table step; (-) high voltage pulse is applied to the conductive sample mounting table to accelerate the ions of the plasma formed in the vacuum chamber, and the ion implantation is performed simultaneously with the deposition of the ceramic thin film (or the thin film in which the ceramic and the metal are mixed) And < / RTI >
In one embodiment of the present invention, a sputtering target to be mounted on a magnetron deposition source for depositing a ceramic thin film is a ceramic thin film (or ceramic and metal) having a high hardness value and excellent biocompatibility by bonding with nitrogen, oxygen, (Nb), titanium (Ti), or the like, which can form a mixed thin film) can be used.
In one embodiment of the present invention, a gas introduced into the vacuum chamber may be a single gas such as argon, nitrogen, methane, or oxygen, or a mixed gas thereof.
In an embodiment of the present invention, the content of the activated gas introduced to produce a thin film in which ceramic and metal are mixed is controlled so that the ceramic formed by reacting the sputtering target element metal with the activating gas of the sputtering target element metal A mixed thin film can be formed.
In one embodiment of the present invention, the power density of DC, AC, or pulsed DC applied to the magnetron evaporation source equipped with the sputtering target may be 1 W / cm ² to 50 W / cm ² .
In an embodiment of the present invention, the pressure of the gas used in the vacuum chamber may be maintained at a pressure of 0.5 mTorr to 5 mTorr.
In one embodiment of the present invention, the thickness of the ceramic thin film (or the thin film in which ceramic and metal are mixed) may be 100 nm to 20 μm.
In one embodiment of the present invention, the metal base material to be deposited is selected from the group consisting of 316L stainless steel, a cobalt-chromium-molybdenum alloy (Co-Cr-Mo alloy), a cobalt-chromium-molybdenum- (Ti-Al-V alloy) or a zirconium alloy (Zirconium alloy) can be used as the material of the metal layer .
In one embodiment of the present invention, the frequency of the negative high voltage pulse applied to the conductive sample mount for ion implantation is 0.1 Hz to 500 Hz, the pulse width is 1 μsec to 200 μsec, the negative (- -) can use values from -1 kV to -100 kV.
In an embodiment of the present invention, a ceramic thin film on the joint surface (or a thin film in which ceramic and metal are mixed) may be formed as a multi-layer composite material in order to reduce the wear amount of the polymer material for an artificial joint .
In one embodiment of the present invention, thin film deposition and ion implantation can be performed simultaneously at the initial stage of multilayer thin film deposition in order to enhance the bonding force between thin films formed in multiple layers or between a multilayer thin film and a metal matrix.

1. Vacuum tank
2. DC power supply
3. RF Antenna
4. A sputtering target mounted on a magnetron deposition source
5. Magnetron plasma
6. Sample
7. Conductive sample mount
8. Gas flow regulator
9. Working gas
10. Vacuum pump
11. High voltage pulse
12. High Voltage Pulse Power Supply
13. Vacuum coils ground
14. Magnets
15. Lead Shielding

Claims (16)

Positioning the sample in a vacuum chamber;
A first step of injecting ions into the sample through an ion implantation step;
A second step of performing a dynamic ion mixing process in which a thin film is formed on the sample through a sputtering process and an ion implantation process in which ions in the plasma are injected into the sample; And
A third step of finishing the ion implantation process in the dynamic ion mixing process and continuing the sputtering process to grow the thin film;
Lt; / RTI >
Wherein an interface having a gradual compositional change is formed between the sample and the thin film through the second step to increase the adhesive force between the sample and the thin film. The method according to claim 1,
The sample may be a cobalt-chromium-molybdenum (Co-Cr-Mo) alloy, a cobalt-chromium-molybdenum-carbon alloy, a titanium (Ti) N alloy, a titanium-aluminum-vanadium alloy, a zirconium alloy, or stainless steel. The method according to claim 1,
Wherein the ion implantation process of the first step and the second step is performed by ionizing the introduced gas through plasmaization and applying a negative voltage to the conductive sample mounting table on which the sample is mounted, Gt; The method according to claim 1,
A method for manufacturing a material for an artificial joint, which is ion-implanted into the sample by ionizing nitrogen (N ₂ ), methane (CH ₄ ), oxygen (O ₂ ), or a mixed gas thereof in the ion implantation step of the first step . The method according to claim 1,
Wherein argon is used as an inert gas and nitrogen (N ₂ ), methane (CH ₄ ), oxygen (O ₂ ), or a mixed gas thereof is used as an activation gas in the sputtering process of the second step and the third step, A method for manufacturing a material for an artificial joint. The method according to claim 1,
Wherein the elemental metal discharged from the sputtering target in the sputtering step of the second step and the third step reacts with the drawn activation gas to form the thin film. The method according to claim 6,
And adjusting a content of the introduced activated gas to form a mixed thin film in which ceramic and metal are mixed. The method according to claim 1,
Wherein the thin film comprises a ceramic thin film or a mixed thin film in which ceramic and metal are mixed. The method according to claim 1,
Wherein the thin film is configured to include niobium (Nb), titanium (Ti), or a mixture thereof. The method according to claim 1,
Wherein the thin film has a thickness ranging from 100 nm to 20 占 퐉. The method according to claim 1,
Further comprising the step of removing impurities on the surface of the sample using argon plasma before performing the first step. The method according to claim 1,
Wherein the thin film is composed of multiple layers. The method according to claim 1,
Wherein the first step to the third step are repeatedly performed to form the thin film in multiple layers. The method according to claim 1,
Wherein the interior of the vacuum chamber is maintained at a pressure in the range of 0.5 mTorr to 5 mTorr. The method according to claim 1,
The ion implantation process of the first and second steps may be performed by applying a voltage in the range of -1 kV to -100 kV, a frequency in the range of 0.1 Hz to 500 Hz, and a voltage in the range of 1 μsec to 200 μsec (-) high voltage pulse having a pulse width of? The method according to claim 1,
The sputtering process in the second and third steps may be performed by applying a direct current, alternating current, or pulsed direct current having a power density in the range of 1 W / cm ² to 50 W / cm ² to a magnetron evaporation source equipped with a sputtering target Wherein the method comprises the steps of:

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