KR101644585B1 - Ceramic packaging heat dissapation structure and method of manufacturing the same and light emitting diode heat dissapation package - Google Patents

Ceramic packaging heat dissapation structure and method of manufacturing the same and light emitting diode heat dissapation package Download PDF

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Publication number
KR101644585B1
KR101644585B1 KR1020140174726A KR20140174726A KR101644585B1 KR 101644585 B1 KR101644585 B1 KR 101644585B1 KR 1020140174726 A KR1020140174726 A KR 1020140174726A KR 20140174726 A KR20140174726 A KR 20140174726A KR 101644585 B1 KR101644585 B1 KR 101644585B1
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ceramic substrate
led chip
heat
chip mounting
ceramic
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KR1020140174726A
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Korean (ko)
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KR20160069157A (en
Inventor
김현학
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주식회사 라인어스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a ceramic packaging heat-dissipating structure which is structurally improved in its ability to discharge conducted heat to the outside and has heat transfer, heat radiation, durability and wear resistance, An LED heat dissipation package is disclosed.
A ceramic packaging and heat-dissipating structure according to the present invention includes: a ceramic substrate having an LED chip mounting area and an inactive area disposed outside the LED chip mounting area; A plurality of nano pores penetrating the LED chip mounting area and the inactive area of the ceramic substrate, respectively, through which air flows; And a metal buried layer selectively buried in a part of the plurality of nanopores and filled in the ceramic substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a ceramic packaging and heat-dissipating structure, a method of manufacturing the same, and an LED heat-dissipating package having the same.

The present invention relates to a ceramic packaging and heat dissipating structure, and more particularly, to a ceramic packaging and heat dissipating structure that structurally improves the function of discharging conducted heat to the outside to thereby have heat transfer, heat radiation, durability and wear resistance, The present invention relates to a heat dissipation structure for a ceramic packaging, a manufacturing method thereof, and an LED heat dissipation package having the same.

In the LED (Light Emitting Device) industry, the heat problem is becoming a difficult problem to solve. Such a heating problem is a serious problem because the semi-permanent lifetime can not be maintained when the LED is manufactured by packaging, and the lifetime of the LED element itself is reduced.

The proper temperature to maintain the semi-permanent lifetime of LED is about 25 ~ 30 ℃, but it is difficult to maintain this temperature because current packaging technology does not prevent heat generation. In order to solve the heat problem due to the limitation of the current packaging structure, various heat dissipation structures have been proposed. However, the demand for the high output chip and the multi chip technology has changed from the LED heat to the LED There is no alternative that can be used semi-permanently. In addition, improvement of heat dissipation structure can not solve heat dissipation due to high power, multi chip technology in the limit of size and volume reduction problems due to miniaturization of high power of front lamp and arrangement of multi chips.

FIG. 1 is a cross-sectional view of a conventional LED package.

1, a conventional LED package 1 includes a substrate 5, an insulating layer 10 laminated on the substrate 5, a lead wire 20 (not shown) disposed on the insulating layer 10, A wire 40 electrically connecting the lead wire 20 and the LED chip 30 and an LED chip 30 attached on the insulating layer 10 and a window for exposing the LED chip 30 And an epoxy resin layer 60 filled in the barrier ribs 50. The barrier ribs 50 are formed on the barrier ribs 50,

At this time, an insulating layer 10 made of a resin material is disposed under the LED chip 30. A lead wire 20 made of metal is formed on the upper surface and the side surface of the insulating layer 10 by sputtering or the like, 20 are brought into contact with the substrate 5 so as to be drawn out to transfer the heat.

Such a structure is advantageous in that the lead wire 20 made of a metal is thermally transferred to the substrate 5, but there is a limitation in radiating heat due to a decrease in thermal radiation characteristics at the surface, and thermal bottleneck occurs due to a difference in thermal conductivity, There has been a problem that the deterioration occurs.

A related prior art is Korean Patent Laid-Open Publication No. 10-2006-0086057 (published on July 31, 2006), which discloses an LED package having a heat dissipation structure and structure of the LED package.

An object of the present invention is to provide a ceramic packaging and heat dissipating structure capable of releasing heat to the outside by structurally improving the function of discharging conducted heat to the outside and having thermal transfer, heat radiation, durability and wear resistance, And an LED heat dissipation package having the same.

According to an aspect of the present invention, there is provided a ceramic packaging and heat-dissipating structure including: a ceramic substrate having an LED chip mounting region and an inactive region disposed outside the LED chip mounting region; A plurality of nano pores penetrating the LED chip mounting area and the inactive area of the ceramic substrate, respectively, through which air flows; And a metal buried layer selectively buried in a part of the plurality of nanopores and filled in the ceramic substrate.

According to an aspect of the present invention, there is provided a method of manufacturing a ceramic package heat dissipation structure, comprising: (a) firing a ceramic substrate having an LED chip mounting area and an inactive area disposed outside the LED chip mounting area; (b) forming a plurality of nanopores in the LED chip mounting area and the inactive area of the fired ceramic substrate by electrochemical etching; And (c) forming a metal buried layer by selectively depositing a metal on a part of the plurality of nanopores by electrochemical plating on the ceramic substrate having the plurality of nanopores formed thereon.

According to an aspect of the present invention, there is provided an LED heat dissipation package including a ceramic substrate having an LED chip mounting region and an inactive region disposed outside the LED chip mounting region, an LED chip mounting region of the ceramic substrate, A plurality of nano pores through which air flows into the plurality of nano pores and a metal buried layer selectively embedded in the plurality of nano pores and filled in the ceramic substrate; And an LED package unit mounted on the ceramic packaging and heat-dissipating structure.

The ceramic packaging heat-radiating structure and the method of manufacturing the same according to the present invention can provide a maximum surface area in which a plurality of nano pores can be in contact with air as compared with a ceramic substrate, The metal that is filled in the plurality of nano pores can be freely designed so that the heat at the optimum point of heat generation can be selectively transferred to the metal, ceramic, and air, and at the same time, transfer, conduction, radiation, and external discharge can be enabled.

In addition, the LED heat dissipation package according to the present invention reduces the heat generated by driving the LED chip by mounting the ceramic package heat dissipation structure, thereby reducing the heat dissipation in the package structure such as an LED array structure or a multi- It is possible to remarkably improve the efficiency, the volume reduction and the manufacturing cost of the secondary mechanical heat dissipating device.

1 is a cross-sectional view of a conventional LED package.
2 is a perspective view illustrating a ceramic packaging and heat-dissipating structure according to an embodiment of the present invention.
3 is a cross-sectional view taken along the line III-III 'of FIG.
FIG. 4 is a flow chart showing a manufacturing method of a ceramic packaging and heat-dissipating structure according to an embodiment of the present invention.
5 is a photograph showing a plurality of nano pores formed on a ceramic substrate.
6 is a view for explaining the electrochemical plating method.
7 is a cross-sectional view illustrating an LED heat dissipation package according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a ceramic packaging and heat-dissipating structure according to a preferred embodiment of the present invention, a method of manufacturing the same, and an LED heat-radiating package having the same will be described in detail with reference to the accompanying drawings.

FIG. 2 is a perspective view showing a ceramic packaging and heat-dissipating structure according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view taken along the line III-III 'of FIG.

Referring to FIGS. 2 and 3, a ceramic packaging and heat-dissipating structure 100 according to an embodiment of the present invention includes a ceramic substrate 120, a plurality of nano pores 140, and a metal buried layer 160.

The ceramic substrate 120 has an inactive region NA disposed outside the LED chip mounting region CA and the LED chip mounting region CA. The ceramic substrate 120 may be formed of any one of alumina (Al 2 O 3 ), aluminum nitride (AlN), boron nitride (BN), and silicon nitride (Si 3 N 4 ), which are high thermal conductive ceramic materials A small amount of polymer, silver (Ag), copper (Cu), and aluminum (Al) may be further added to the ceramic material in order to increase the thermal conductivity.

At this time, the non-active region NA may be disposed in the form of surrounding the outside of the LED chip mounting region CA, but is not limited thereto. At least one or more of such ceramic substrates 120 are stacked vertically. That is, although only one ceramic substrate 120 may be formed, it is more preferable that two or more ceramic substrates 120 are vertically stacked to improve thermal conductivity, durability, and wear resistance.

The plurality of nano pores 140 are formed to penetrate the LED chip mounting area CA and the inactive area NA of the ceramic substrate 120, respectively. At this time, the plurality of nano pores 140 provide the maximum surface area that can be in contact with the air compared to the ceramic substrate 120, and thus it is possible to provide a maximum area for releasing heat in the air. Accordingly, the plurality of nano pores 140 emits heat to the outside in an air cooling manner.

The plurality of nanopores 140 preferably have a regular matrix array structure. At this time, the average diameter of the plurality of nano pores 140 is preferably about 500 nm or less, but it is not necessarily limited thereto.

The metal buried layer 160 is selectively buried in a part of the plurality of nano pores 140 and filled in the ceramic substrate 120. At this time, the metal buried layer 160 may be formed of at least one selected from Cu, Ni, Fe, Co, Ag, Au, Pd, Pt and alloys thereof.

This metal buried layer 160 is formed in the inactive region NA of the ceramic substrate 120. The metal buried layer 160 is selectively buried only in a part of the plurality of nano pores 140, that is, the nano pores 140 disposed in the inactive area NA, so that the metal buried layer 160, The heat generated by the LED chip (not shown) can be effectively discharged to the outside by acting as a heat transfer path in the heat sink 120.

At this time, the metal buried layer 160 transferred with heat generated by the driving of the LED chip is transferred to the ceramic substrate 120, which is a ceramic medium having excellent thermal conductivity, to disperse the heat in all directions through thermal radiation, The heat dispersed in all directions can rapidly release heat from the contact surface with the plurality of nano pores 140 formed in the ceramic substrate 120 by the air cooling method.

The ceramic packaging and heat-dissipating structure according to the embodiment of the present invention provides a maximum surface area at which a plurality of nano pores can be in contact with air as compared with a ceramic substrate, thereby providing a maximum area for releasing heat in the air , A metal that is filled in a plurality of nano pores can be freely designed, so that the heat at the optimum point of heat generation can be selectively made into metal, ceramic, and air, and at the same time, transfer, conduction, radiation, .

Hereinafter, a method of manufacturing a ceramic packaging and heat-dissipating structure according to an embodiment of the present invention will be described with reference to the accompanying drawings.

5 is a photograph showing a plurality of nano pores formed in a ceramic substrate, and FIG. 6 is a view illustrating an electrochemical plating method according to an embodiment of the present invention. to be.

As shown in FIG. 4, the method of manufacturing a ceramic packaging and heat-dissipating structure according to an embodiment of the present invention includes a firing step (S210), a plurality of nanopore forming steps (S220), and a metal buried layer forming step (S230).

Plasticity

In the firing step S210, the ceramic substrate 120 having the LED chip mounting area CA and the inactive area NA disposed outside the LED chip mounting area CA is fired. In this case, firing is preferably performed at 900 to 1100 占 폚. If the firing temperature is lower than 900 ° C, it may be difficult to secure the desired abrasion resistance, durability and thermal conductivity. On the other hand, when the firing temperature exceeds 1100 ° C, the basic firing temperature of the ceramic material is drastically reduced beyond the optimum firing temperature.

Multiple nanopore formation

Referring to FIGS. 4 and 5, in the plurality of nanopore forming steps S220, a plurality of nano pores are formed in the LED chip mounting region and the inactive region of the fired ceramic substrate. At this time, the plurality of nano pores are formed in the LED chip mounting area and the inactive area of the ceramic substrate by the electrochemical etching method, respectively.

The plurality of nano pores are formed so as to penetrate the LED chip mounting area and the inactive area of the ceramic substrate, respectively. At this time, the plurality of nano pores provide the maximum surface area that can be in contact with air as compared with the ceramic substrate, so that it is possible to provide a maximum area for releasing heat in the air. Accordingly, the plurality of nanopores emits heat to the outside in an air cooling manner.

It is preferable that the plurality of nano pores have a regular matrix arrangement structure. At this time, the average diameter of the plurality of nano pores 140 is preferably about 500 nm or less, but it is not necessarily limited thereto.

Metal buried layer formation

Referring to FIGS. 4 and 6, in a metal buried layer forming step (S230), a metal buried layer is formed by embedding a metal selectively in a part of a plurality of nano pores into a plurality of nano-pored ceramic substrates by an electrochemical plating method.

At this time, in the metal buried layer forming step S230, the ceramic substrate 400 having a plurality of nanopores is immobilized on the anode 320 and immersed in the reaction vessel 310. On one side separated from the anode 320, ) Are arranged. A reference electrode 340 for measuring a potential difference may be disposed between the anode 320 and the cathode 330 and the anode 320, the cathode 330 and the reference electrode 340 may be disposed between the power supply 350 Power is applied.

A metal buried layer is formed by selectively embedding a metal in a part of a plurality of nano by this electrochemical plating method. At this time, the metal buried layer may be formed of at least one selected from Cu, Ni, Fe, Co, Ag, Au, Pd, Pt and alloys thereof.

Such a metal buried layer is formed in the inactive region of the ceramic substrate. The metal buried layer is selectively buried only in a part of the plurality of nano-pores, that is, in the nano-pores disposed in the inactive region, so that the metal buried layer of metal acts as a heat transfer path in the ceramic substrate, So that it can be effectively discharged to the outside.

At this time, the metal buried layer transferred with heat is transferred to a ceramic substrate, which is a ceramic medium having excellent thermal conductivity, to disperse heat in all directions through thermal radiation, and the heat radiated in all directions is transferred to a plurality of nano pores The heat can be quickly released to the outside by the air cooling method from the contact surface of the heat exchanger.

When a metal buried layer is formed by filling a plurality of nano pores regularly arranged by filling a plurality of nano pores with a metal selectively using an electrochemical plating method, a metal filled in the plurality of nano pores is selectively It can be freely designed, so that the heat at the optimum point of heat can be selectively made into metal, ceramic and air, and at the same time, transfer, conduction, radiation and external emission can be made possible.

The ceramic packaging and heat-dissipating structure manufactured in the above-described processes (S210 to S230) provides a maximum surface area at which a plurality of nano pores can be in contact with air as compared with a ceramic substrate, thereby providing a maximum area for releasing heat in the air And the metal that is filled in a plurality of nano pores can be freely designed so that the heat at the optimum point of heat can be selectively and simultaneously transferred to the metal, ceramic and air, and the structure capable of transferring, .

7 is a cross-sectional view illustrating an LED heat dissipation package according to an embodiment of the present invention.

Referring to FIG. 7, an LED heat dissipation package 500 according to an embodiment of the present invention includes a ceramic packaging structure 100 and an LED package unit 600. At this time, the ceramic packaging structure 100 is substantially the same as the ceramic packaging structure described with reference to FIGS. 2 and 3, and redundant description will be omitted.

The LED package unit 600 is mounted on the ceramic packaging heat-dissipating structure 100. At this time, the LED package unit 600 includes an insulating layer 610 attached on the ceramic packaging and heat-dissipating structure 100, a lead wire 620 disposed on the insulating layer 610, an LED 610 mounted on the insulating layer 610, A wire 640 electrically connecting the lead wire 620 and the LED chip 630 and a partition wall 650 having a window exposing the LED chip 630; A filled epoxy resin layer 660 and a lens 670 attached on the epoxy resin layer 660. [

At this time, an insulating layer 610 made of a resin material is disposed on the lower part of the LED chip, a lead wire 620 made of a metal material is formed on the insulating layer 610 and a lead wire 620 is drawn out to the ceramic packaging structure 100 So that the heat is transferred.

The LED heat dissipation package 500 according to the present invention reduces the heat generated by driving the LED chip 630 by mounting the ceramic package heat dissipation structure 100 so that an LED array structure requiring a high output, The heat radiation can be reduced in the package in the structure or the like, so that the efficiency, the volume reduction and the manufacturing cost of the secondary mechanical heat radiation device can be remarkably improved.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. These changes and modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

100: ceramic packaging heat dissipation structure 120: ceramic substrate
140: Nano pores 160: Metal buried layer
500: LED heat dissipation package 610: insulating layer
620: lead wire 630: LED chip
640: wire 650:
660: epoxy resin 670: lens
CA: LED chip mounting area NA: inactive area

Claims (9)

A ceramic substrate having an LED chip mounting region and an inactive region disposed outside the LED chip mounting region;
A plurality of nano pores penetrating the LED chip mounting area and the inactive area of the ceramic substrate, respectively, through which air flows; And
And a metal buried layer selectively embedded in a part of the plurality of nanopores and filled in the ceramic substrate,
Wherein the plurality of nano pores are formed in an LED chip mounting area and an inactive area of the ceramic substrate, respectively, and the metal buried layer is formed in an inactive area of the ceramic substrate.
The method according to claim 1,
The ceramic substrate
And at least one or more sheets are stacked vertically.
The method according to claim 1,
The plurality of nanopores
Wherein the heat dissipation structure has a regular matrix array structure.
The method according to claim 1,
The plurality of nanopores
And the heat is released to the outside by an air cooling method.
delete (a) firing a ceramic substrate having an LED chip mounting area and an inactive area disposed outside the LED chip mounting area;
(b) forming a plurality of nanopores in the LED chip mounting area and the inactive area of the fired ceramic substrate by electrochemical etching; And
(c) forming a metal buried layer by selectively embedding a metal in a part of the plurality of nanopores by electrochemical plating on the ceramic substrate having the plurality of nanopores formed therein;
Wherein the heat dissipation structure is formed of a ceramic material.
The method according to claim 6,
In the step (b)
The plurality of nanopores
Wherein the LED chip mounting area and the non-active area of the ceramic substrate are formed by an electrochemical etching method.
The method according to claim 6,
In the step (c)
Wherein the metal buried layer is formed in an inactive region of the ceramic substrate.
An LED chip mounting area and an inactive area disposed outside of the LED chip mounting area; an LED chip mounting area and an inactive area of the ceramic substrate, the plurality of nano- A ceramic packaging and heat dissipation structure having a pore and a metal buried layer selectively embedded in a part of the plurality of nano pores and filled in the ceramic substrate; And
And an LED package unit mounted on the ceramic packaging heat-dissipating structure,
Wherein the plurality of nano pores are formed in the LED chip mounting area and the inactive area of the ceramic substrate, respectively, and the metal buried layer is formed in the inactive area of the ceramic substrate.
KR1020140174726A 2014-12-08 2014-12-08 Ceramic packaging heat dissapation structure and method of manufacturing the same and light emitting diode heat dissapation package KR101644585B1 (en)

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CN111446353A (en) * 2019-01-16 2020-07-24 株式会社辉元 Ceramic light emitting diode package and method of manufacturing the same
CN116435290B (en) * 2023-06-13 2023-08-22 中诚华隆计算机技术有限公司 Three-dimensional stacking structure and stacking method of chips

Citations (1)

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Publication number Priority date Publication date Assignee Title
KR100634303B1 (en) * 2004-09-22 2006-10-16 서울반도체 주식회사 Light emitting diode

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Publication number Priority date Publication date Assignee Title
KR100671979B1 (en) * 2005-06-29 2007-01-19 윤성만 Heat emission package for light-emitting diode

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100634303B1 (en) * 2004-09-22 2006-10-16 서울반도체 주식회사 Light emitting diode

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