KR101642991B1 - Transcripting device in using thermal transfer process - Google Patents

Abstract

The present invention relates to a transfer apparatus used in a thermal transfer process.

The transfer device of the present invention comprises a transfer substrate, a plurality of heat-generating wiring groups patterned and divided into chamfering units including at least one chamfered area on the transfer substrate, a transferring material layer deposited on the chamfering unit on the heat- A plurality of common wiring pairs disposed on both sides of the heating wiring group and a plurality of power supply devices for applying electrical energy to each common wiring pair.

In particular, the plurality of heat generating wirings constituting the plurality of heat generating wiring groups are electrically connected to the common wiring pairs corresponding to the heat generating wiring group.

By supplying electric energy individually in correspondence with the chamfering unit, a low-capacity power supply device can be used irrespective of the area of the transfer substrate, and it is advantageous in ensuring the reproducibility of the transferring process.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a transfer device used in a thermal transfer process,

The present invention relates to a transfer apparatus used in a thermal transfer process.

2. Description of the Related Art Recently, various flat panel display devices capable of reducing weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Such a flat panel display device includes a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP) And a light emitting device (Electroluminescence Device).

PDP has attracted attention as a display device that is most advantageous for large screen size but small size because of its simple structure and manufacturing process, but it has disadvantage of low luminous efficiency, low luminance and high power consumption. Thin Film Transistor LCD (TFT LCD) is the most widely used flat panel display device, but has a narrow viewing angle and low response speed. The electroluminescence device is divided into an inorganic light emitting diode display device and an organic light emitting diode display device according to the material of the light emitting layer. Of these organic light emitting diode display devices, self light emitting devices are self light emitting devices, There is a big advantage.

The organic light emitting diode display device has an organic light emitting diode (OLED) as shown in FIG.

The OLED includes an electroluminescent organic compound layer and a cathode electrode and an anode electrode facing each other with the organic compound layer therebetween. The organic compound layer includes an electron injection layer (EIL), an electron transport layer (ETL), an emission layer (EML), a hole transport layer (HTL), and a hole injection layer HIL). ≪ / RTI > When a driving voltage is applied to the anode electrode and the cathode electrode, holes passing through the HTL and electrons passing through the ETL are transferred to the EML to form excitons, And causes visible light to be emitted.

The organic light emitting diode display device forms a light emitting layer (EML) at a position where an OLED is to be arranged in each of R (red), G (green), and B (blue) pixels for a full color implementation. The light emitting layer (EML) is patterned for each pixel. 1) FMM (Fine Metal Mask) method, 2) laser thermal transfer method, and 3) ink jetting method are known as methods for forming the light emitting layer (EML). These methods are not suitable for large-area substrates requiring high-precision pattern formation in a short time.

In recent years, a heat transfer method (or a "Joule heat transfer method") using Joule heating has emerged in order to form a high-precision pattern in a short time. FIGS. 2A and 2B are a cross-sectional view and a perspective view showing an outline of a transfer apparatus by Joule heat transfer method. The Joule heat transfer method is a method in which a transfer substrate 1 on which an organic light emitting material or a transfer material layer 13 is formed is aligned in a vacuum chamber 10 with a transfer substrate 11 and a spacer 9 interposed therebetween And the transfer material layer 13 is transferred to the transfer target substrate 11 by applying electrical energy to the transfer substrate 1. [

A plurality of heat generating wirings 5 are formed on the transfer substrate 1 so as to correspond to pixel regions of the transfer target substrate 11 to which the transfer material layer 13 is to be transferred. First and second common electrodes 3a and 3b are formed on both sides of the heat-generating wirings 5 to connect the heat-generating wirings 5 in common. A transfer material layer 13 is formed on the entire surface of the transfer substrate 1 so as to face the transfer source substrate 11 on the heat generating wirings 5. [ The first device electrode 7a and the second device electrode 7b are aligned on the first and second common electrodes 3a and 3b, respectively. The common electrodes 3a and 3b and the device electrodes 7a and 7b can be connected and disconnected from each other. The power supply 15 may generate a DC power or an AC power.

The transfer source substrate 11 is mounted on the heat generating wirings 5 on which the transfer material layer 13 is formed at regular intervals and then the device electrodes 7a and 7b are connected to the common electrodes 3a, 3b and then the power supply unit 15 connected between the first and second device electrodes 7a and 7b is operated to apply a predetermined power. Joule heat generated in the heat generating wirings 5 by the power application is transferred to the transfer material layer 13 located on the heat generating wirings 5. [ As a result, the transfer material layer 13 is transferred to the transfer source substrate 11 while evaporating, and an organic light-emitting layer is formed in the pixel region of the transfer source substrate 11.

The area of the transfer substrate and the substrate to be transferred are also increasing according to the tendency of the organic light emitting diode display panel to be larger. In order to sufficiently heat the transfer material layer in a short time in a large-area transfer substrate, a high-capacity power supply device capable of generating high electric energy is required. As the capacity of the power supply increases, it is difficult to secure safety and the manufacturing cost of the power supply increases.

In order to ensure convenience and uniformity of the transferring process, the transfer substrate and the transfer source substrate are usually made of a mother glass having a size of N (chamfering number) × S (area of the organic light emitting diode display panel). In FIG. 2B, A-A ', B-B', C-C 'and D-D' show chamfering units. The area of the main substrate and the number of the heat generating wirings formed on the main substrate increase according to the tendency of the organic light emitting diode display panel to be larger. It is difficult to supply a constant electric energy to all the heat generating wirings according to the size of the transfer substrate even if high electric energy is applied to the transfer substrate as the main substrate by using the high capacity power supply device. It is not easy.

Accordingly, an object of the present invention is to provide a transfer device capable of performing Joule heat transfer using a low-capacity power supply device regardless of the area of a transfer substrate in a transfer device for depositing an organic light-emitting material by Joule heat transfer .

In order to achieve the above object, a transfer apparatus according to an embodiment of the present invention includes a transfer substrate, a plurality of heat generating wiring groups patterned in a chamfering unit including at least one chamfered area on the transferring substrate, And a plurality of power supply units for applying electrical energy to each of a plurality of common wiring pairs and a common wiring pair disposed on both sides of the heat generating wiring group.

The transfer device further includes a plurality of pairs of device electrodes, each of which is connected to each of a plurality of substrate electrode pairs and power supply devices extended from each common wiring pair, and contacts each pair of substrate electrodes.

The transfer device further includes an image receiving substrate facing the transfer substrate at a predetermined distance from the transfer material layer, and the substrate electrode pairs are brought into contact with the device electrode pairs at a specific area of the transfer substrate that is not overlapped with the image receiving substrate.

Each of the heating wire groups is divided and patterned into chamfering units including one chamfered region, and the number of power supply units is equal to the number of chamfering units.

Each of the heat generating wiring groups is divided and patterned into chamfering units including a plurality of chamfering regions, and the number of power supply devices is equal to the number of chamfering units.

The chamfered regions included in each chamfering unit are adjacent to each other horizontally or vertically.

On the common wiring pairs and the substrate electrode pairs, a resistance reducing film for suppressing heat generation in the common wiring pair and the substrate electrode pair is formed.

The transfer apparatus according to the present invention can perform the Joule heat transfer method using a low-capacity power supply device irrespective of the area of the transfer substrate by supplying electric energy individually in units of chamfering in response to the increase in the area of the transfer substrate have. As a result, it is possible to supply constant electric energy to all the heat generating wirings under a large area, which is very advantageous in ensuring the reproducibility of the transferring process.

Further, since the transfer device according to the present invention can use the low-capacity power supply device regardless of the area of the transfer substrate, the safety can be easily secured, and the manufacturing cost of the power supply device can be greatly reduced.

Hereinafter, preferred embodiments of the present invention will be described with reference to FIGS. 3 to 10. FIG.

The transfer device according to the first embodiment of the present invention divides and patterns each of the heat generating wiring groups into a chamfer unit including one chamfered area and increases the number of the power supply devices by the number of the heat generating wiring groups, Perform Joule heat transfer with low electrical energy regardless of area.

3 to 7 show a transfer apparatus according to the first embodiment of the present invention.

3 and 4, the transfer apparatus according to the first embodiment of the present invention is provided with a vacuum chamber 50, a transfer substrate 100, an image receiving substrate 200, and a plurality of power sources And supply devices Ev1 and Ev2.

The transfer substrate 100 may be aligned and adhered to the transfer target substrate 200 automatically or manually in the vacuum chamber 50 for Joule heat transfer. Further, when the Joule heat transfer method is completed, it can be detached from the image receiving substrate 200. The transfer substrate 100 may include a heat-resistant material such as glass or quartz material having a small thermal expansion coefficient so as not to bend well by heat.

On the transfer substrate 100, a plurality of patterned heating wiring groups 102A and 102B are formed by dividing the chamfering unit including one chamfered region. A first heat generating wiring group 102A including a plurality of heat generating wirings is formed in the first chamfered area A and a second heat generating wiring group 102B including a plurality of heat generating wirings is formed in the second chamfered area B. do. The first and second heating wiring groups 102A and 102B are physically separated. The heat generating wiring groups 102A and 102B convert applied electric energy into heat energy. The heat generating wiring groups 102A and 102B include any one metal or two or more metals or alloys of Ag, Au, Al, Cu, Mo, Pt, Ti, W and Ta. The heat generating wiring groups 102A and 102B are formed by transferring the metal or alloy by any one of a CVD (Chemical Vapor Deposition) process, a sputtering process, an E-beam process, and an electrolytic / electroless plating process Deposited on the substrate 100, and then patterned by photolithography, wet etching, or dry etching. This metal or alloy is deposited on the entire surface of the substrate 100. The heat generating wiring groups 102A and 102B are formed to have a thickness and an area of 0.1 to 1 mu m, preferably 0.2 to 0.3 mu m, in accordance with the target pixel position of the transfer source substrate 200 to which the transfer material layer 108 is transferred .

The first and second heating wiring groups 102A and 102B are connected to the first and second common wiring pairs 104A and 104B on both sides, respectively. The first common wiring pair 104A electrically connects the heating wirings of the first heating wiring group 102A. The second common wiring pair 104B electrically connects the heating wirings of the second heating wiring group 102B. The common wiring pairs 104A and 104B may include substantially the same material as the heating wiring groups 102A and 102B and may be formed in substantially the same process as the heating wiring groups 102A and 102B have. The common wiring pairs 104A and 104B can be formed thicker and wider than the heating wiring groups 102A and 102B to suppress heat generation due to wiring resistance.

A transfer material layer 108 is formed on the common wiring pairs 104A and 104B. The transfer material layer 108 may be any one of red (R), green (G), and blue (B) organic light emitting materials. The transfer material layer 108 may be patterned on the common wiring pairs 104A and 104B in a chamfered unit through a thermal evaporation process or the like.

First and second substrate electrode pairs 106A and 106B are connected to the first and second common wiring pairs 104A and 104B, respectively. The first substrate electrode pair 106A is extended to the upper region or the lower region of the transfer substrate 100 which is not overlapped with the source substrate 200 after being connected to the first common wiring pair 104A. The second substrate electrode pair 106B is extended to the upper region or the lower region of the transfer substrate 100 which is not overlapped with the source substrate 200 after being connected to the second common wiring pair 104B. The substrate electrode pairs 106A and 106B may include substantially the same material as the heating wire groups 102A and 102B and may be formed in substantially the same process as the heating wire groups 102A and 102B have. The substrate electrode pairs 106A and 106B can be formed thicker and wider than the heat generating wiring groups 102A and 102B to suppress heat generation due to wiring resistance.

On the other hand, the resistance reduction film 110 may be further formed on the common wiring pairs 104A and 104B and the substrate electrode pairs 106A and 106B as shown in FIG. The resistance reducing film 110 reduces the wiring resistance of the common wiring pairs 104A and 104B and the substrate electrode pairs 106A and 106B to further suppress heat generation. The resistance reducing film 110 may include substantially the same material as the heat generating wiring groups 102A and 102B and may be formed in substantially the same process as the heat generating wiring groups 102A and 102B.

The first and second substrate electrode pairs 106A and 106B are brought into contact with the first and second device electrode pairs 302A and 302B in the upper region or the lower region of the transfer substrate 100, respectively. The first device electrode pair 302A is connected to the first power supply device Ev1 disposed outside the vacuum chamber 50 and the second device electrode pair 302B is connected to the second power supply device Ev2 disposed outside the vacuum chamber 50. [ And connected to the power supply device Ev2. In the vacuum chamber 50, after the transfer substrate 100 is aligned and adhered to the transfer substrate 200 with the spacers 250 therebetween, the device electrode pairs 302A and 302B are electrically connected to the substrate electrode pairs 106A, and 106B. The device electrode pairs 302A and 302B can be pushed up and down by a pusher (not shown) for more reliable surface contact with the substrate electrode pairs 106A and 106B.

The first power supply device Ev1 is connected only to the wirings of the first heating wiring group 102A through the first device electrode pair 302A, the first substrate electrode pair 106A and the first common wiring pair 104A Electric energy is applied. The transfer material layer 108 of the transfer substrate 100 corresponding to the first chamfered area A is transferred to the corresponding pixel area of the transfer target substrate 200 while evaporating. The second power supply device Ev2 is connected only to the wirings of the second heating wiring group 102B through the second device electrode pair 302B, the second substrate electrode pair 106B and the second common wiring pair 104B Electric energy is applied. The transfer material layer 108 of the transfer substrate 100 corresponding to the second chamfered area B is transferred to the corresponding pixel area of the transfer target substrate 200 while evaporating. The first and second power supply devices Ev1 and Ev2 may apply the same amount of electrical energy to each other at the same timing or at different timings. Since the electric energy can be divided and supplied in units of chamfering in order to transfer the transfer material layer 108 to the entire image receiving substrate 200, the area of the transfer substrate 100 Regardless, low-power power supplies alone enable joule heat transfer.

The transfer device according to the first embodiment of the present invention is not limited to the above-described two chamfers but can be extended any number of times. For example, as shown in FIG. 6, corresponding to the first to fourth chamfered regions A to D, first to fourth power supply devices (Ev1 to Ev4) for applying electric energy in chamfering units are used to supply each power supply The capacity of the device can be reduced. 7, first to fifteenth power supply devices (Ev1 to Ev15) for applying electric energy in chamfering units corresponding to the first to fifteenth chamfered regions (A to O) The capacity of the device may also be reduced.

The transfer device according to the second embodiment of the present invention divides and pattern each of the heat generating wiring groups into a chamfer unit including a plurality of chamfered regions and increases the number of power supply devices by the number of heat generating wiring groups, Perform Joule heat transfer with low electrical energy regardless of area.

8 to 10 show a transfer apparatus according to a second embodiment of the present invention.

The transfer apparatus according to the second embodiment of the present invention includes a vacuum chamber 50, a transfer substrate 100, an image receiving substrate 200, and a plurality of power supply units Ev1, Ev2, Ev2, and Ev3. The process conditions such as the forming material, the process method, the thickness (width), and the like of the constituent elements included in the transfer apparatus according to the second embodiment of the present invention are substantially the same as those of the transfer apparatus according to the first embodiment, It is omitted.

The transfer substrate 100 may be aligned and adhered to the transfer target substrate 200 automatically or manually in the vacuum chamber 50 for Joule heat transfer. Further, when the Joule heat transfer method is completed, it can be detached from the image receiving substrate 200.

On the transfer substrate 100, a plurality of patterned heating wiring groups 102A to 102C are formed by dividing a chamfering unit including two chamfered regions. A first heating wiring group 102A is formed in the first chamfering unit A including two vertically adjacent chamfered regions S1 and S2 and two vertically adjacent chamfered regions S1 and S2 are formed, The second heating wire group 102B is formed in the second chamfering unit B including the second chamfering unit B and the third chamfering unit C including the two vertically adjacent chamfering regions S1 and S2, Group 102C is formed. The first to third heating wiring groups 102A to 102C are physically separated. The heat generating wiring groups 102A to 102C convert applied electric energy into heat energy.

The first to third heating wiring groups 102A to 102C are connected to the first to third common wiring pairs 104A to 104C on both sides, respectively. The first common wiring pair 104A electrically connects the heating wirings of the first heating wiring group 102A. The second common wiring pair 104B electrically connects the heating wirings of the second heating wiring group 102B. The third common wiring pair 104C electrically connects the heating wirings of the third heating wiring group 102C.

A transfer material layer is formed on the common wiring pairs 104A to 104C. The transfer material layer may be any one of red (R), green (G) and blue (B) organic light emitting materials. The transfer material layer may be patterned on the common wiring pairs 104A-104C in chamfering units.

The first to third common wiring pairs 104A to 104C are connected to the first to third substrate electrode pairs 106A to 106C, respectively. The first substrate electrode pair 106A is extended to the upper region or the lower region of the transfer substrate 100 which is not overlapped with the source substrate 200 after being connected to the first common wiring pair 104A. The second substrate electrode pair 106B is extended to the upper region or the lower region of the transfer substrate 100 which is not overlapped with the source substrate 200 after being connected to the second common wiring pair 104B. The third substrate electrode pair 106C is extended to the upper region or the lower region of the transfer substrate 100 which is not overlapped with the source substrate 200 after being connected to the third common wiring pair 104C.

On the other hand, a resistance reducing film may be further formed on the common wiring pairs 104A to 104C and the substrate electrode pairs 106A to 106C as in the first embodiment. The resistance reducing film further reduces the wiring resistance of the common wiring pairs 104A to 104C and the substrate electrode pairs 106A to 106C to further suppress heat generation.

The first to third substrate electrode pairs 106A to 106C are in contact with the first to third device electrode pairs 302A to 302C in the upper region or the lower region of the transfer substrate 100, respectively. The first device electrode pair 302A is connected to the first power supply device Ev1 disposed outside the vacuum chamber 50 and the second device electrode pair 302B is connected to the second power supply device Ev2 disposed outside the vacuum chamber 50. [ And the third device electrode pair 302C is connected to the third power supply unit Ev3 disposed outside the vacuum chamber 50. The third power supply unit Ev2 is connected to the power supply unit Ev2. In the vacuum chamber 50, when the transfer substrate 100 is aligned and adhered to the transfer target substrate 200 with the spacers therebetween, the device electrode pairs 302A to 302C are electrically connected to the substrate electrode pairs 106A to 106C . The device electrode pairs 302A-302C can be pressed from top to bottom by a presser (not shown) for more reliable surface contact with the substrate electrode pairs 106A-106C.

The first power supply device Ev1 is connected only to the wirings of the first heating wiring group 102A through the first device electrode pair 302A, the first substrate electrode pair 106A and the first common wiring pair 104A Electric energy is applied. The transfer material layer of the transfer substrate 100 corresponding to the first chamfered unit A is transferred to the corresponding pixel region of the transfer target substrate 200 while evaporating. The second power supply device Ev2 is connected only to the wirings of the second heating wiring group 102B through the second device electrode pair 302B, the second substrate electrode pair 106B and the second common wiring pair 104B Electric energy is applied. The transfer material layer of the transfer substrate 100 corresponding to the second chamfered unit B is transferred to the corresponding pixel region of the transfer target substrate 200 while evaporating. The third power supply device Ev3 is connected only to the wirings of the third heating wiring group 102C through the third device electrode pair 302C, the third substrate electrode pair 106C and the third common wiring pair 104C Electric energy is applied. The transfer material layer of the transfer substrate 100 corresponding to the third chamfer unit C is transferred to the corresponding pixel region of the transfer target substrate 200 while evaporating. The first to third power supply devices Ev1 to Ev3 may apply the same amount of electrical energy to each other at the same timing or at different timings. As can be seen from the example of six chamfering with two vertically adjacent chamfering regions as chamfering units, the electric energy is divided and supplied in units of chamfering units to transfer the layer of transferring material to the entire substrate 200 to be transferred The Joule heat transfer method can be performed using only a low-capacity power supply device regardless of the area of the transfer substrate 100. [

The transfer device according to the second embodiment of the present invention is not limited to the above-described one, but can be extended to any number of chamfered regions included in the chamfering unit and a method of setting the chamfering unit (horizontal or vertical). For example, as shown in Fig. 9, in the case of fifteen chamfered chambers having three chamfered chambers vertically adjacent to each other as chamfer chambers, corresponding to the first to fifth chamfer chambers A to E, 1 to the fifth power supply devices Ev1 to Ev5, the capacity of each power supply device can be reduced. In addition, as shown in Fig. 10, in the case of 24 chamfered chambers having two chamfered chambers horizontally adjacent to each other as chamfer chambers, corresponding to the first to twelfth chamfer chambers A to L, 1 to 12 power supply units Ev1 to Ev12 may be used to reduce the capacity of each power supply unit.

As described above, according to the transfer device of the present invention, electric energy is supplied individually in units of chamfering in response to an increase in the area of the transfer substrate, whereby a low power supply can be used regardless of the area of the transfer substrate, You can do justice. As a result, it is possible to supply constant electric energy to all the heat generating wirings under a large area, which is very advantageous in ensuring the reproducibility of the transferring process.

Further, since the transfer device according to the present invention can use the low-capacity power supply device regardless of the area of the transfer substrate, the safety can be easily secured, and the manufacturing cost of the power supply device can be greatly reduced.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

1 is a view showing the structure of an OLED;

FIG. 2A is a cross-sectional view showing a transfer device by Joule heat transfer. FIG.

FIG. 2B is a perspective view showing a transfer apparatus by Joule heat transfer method. FIG.

3 is a plan view showing an example of a transfer device according to the first embodiment of the present invention.

Fig. 4 is a sectional view of Fig. 3; Fig.

5 is a cross-sectional view of FIG. 3 further including a resistance reducing film;

6 is a plan view showing another example of the transfer device according to the first embodiment of the present invention.

7 is a plan view showing still another example of the transfer device according to the first embodiment of the present invention.

8 is a plan view showing an example of a transfer apparatus according to a second embodiment of the present invention.

9 is a plan view showing another example of the transfer device according to the second embodiment of the present invention.

10 is a plan view showing still another example of the transfer apparatus according to the second embodiment of the present invention.

Description of the Related Art

50: vacuum chamber 100: transfer substrate

102A, 102B, 102C: heat generating wiring group 104A, 104B, 104C: common wiring pair

106A, 106B, 106C: substrate electrode pair 108: transfer material layer

110: resistance reducing film 200:

250: Spacer 302A, 302B, 302C: Device electrode pair

Claims (8)

A transfer substrate; A plurality of heat generating wiring groups divided and patterned in chamfering units including at least one chamfered region on the transfer substrate; A transfer material layer deposited on the heating wiring groups in the chamfering unit; A plurality of common wiring pairs disposed on both sides of the heat generating wiring group; And And a plurality of power supply units for individually applying electrical energy to each of the common wiring pairs, Wherein the plurality of heat generating wiring groups are each composed of a plurality of heat generating wirings, Wherein the plurality of common wiring pairs are electrically connected to a plurality of heat generating wirings of the corresponding heating wiring group. The method according to claim 1, A plurality of substrate electrode pairs extending from each common wiring pair; And Further comprising a plurality of device electrode pairs each of which is connected to the power supply devices and is in contact with each of the substrate electrode pairs. 3. The method of claim 2, Further comprising an image receiving substrate which is opposed to the transfer substrate at a predetermined interval on the transfer material layer; Wherein the pair of substrate electrodes are in contact with the device electrode pairs in a specific region of the transfer substrate that is not overlapped with the transfer source substrate. The method according to claim 1, Each of the heat generating wiring groups is divided and patterned into chamfering units including one chamfering region; Wherein the number of the power supply units is equal to the number of the chamfering units. The method according to claim 1, Wherein each of the heat generating wiring groups is divided and patterned into chamfering units including a plurality of chamfering regions; Wherein the number of the power supply units is equal to the number of the chamfering units. 6. The method of claim 5, Wherein the chamfered regions included in each chamfering unit are adjacent to each other horizontally or vertically. 3. The method of claim 2, And a resistance reduction film for suppressing heat generation in the common wiring pair and the substrate electrode pair is formed on the common wiring pairs and the substrate electrode pairs. 3. The method of claim 2, Wherein the thickness of at least one of the common wiring and the substrate electrode is thicker than the thickness of the heat generating wiring.

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