KR101636140B1 - Light emitting device, and method of fabricating the same - Google Patents

Light emitting device, and method of fabricating the same Download PDF

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Publication number
KR101636140B1
KR101636140B1 KR1020140109315A KR20140109315A KR101636140B1 KR 101636140 B1 KR101636140 B1 KR 101636140B1 KR 1020140109315 A KR1020140109315 A KR 1020140109315A KR 20140109315 A KR20140109315 A KR 20140109315A KR 101636140 B1 KR101636140 B1 KR 101636140B1
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South Korea
Prior art keywords
light emitting
emitting structure
semiconductor layer
refractive index
shell
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KR1020140109315A
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Korean (ko)
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KR20160024006A (en
Inventor
신동수
박진섭
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한양대학교 산학협력단
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Priority to KR1020140109315A priority Critical patent/KR101636140B1/en
Priority to PCT/KR2015/008786 priority patent/WO2016028128A1/en
Publication of KR20160024006A publication Critical patent/KR20160024006A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A method of manufacturing a light emitting device is provided. The method of manufacturing the light emitting device includes the steps of preparing a light emitting structure, core shell particles having a core portion and a shell portion surrounding the core portion, And evaporating the core portion and leaving the shell portion to form hollow particles on the light emitting structure.

Description

TECHNICAL FIELD The present invention relates to a light emitting device,

The present invention relates to a light emitting device and a method of manufacturing the same, and more particularly, to a method of manufacturing a light emitting device including the steps of forming core shell particles having a core portion and a shell portion surrounding the core portion on a light emitting structure and evaporating the core portion to form hollow particles The present invention relates to a method of manufacturing a light emitting device and a light emitting device manufactured thereby.

2. Description of the Related Art A light-emitting diode (LED) is a kind of pn junction diode, which is a semiconductor device using electroluminescence, which is a phenomenon in which a monochromatic light is emitted when a voltage is applied in a forward direction. The wavelength of the emitted light is determined by the bandgap energy (Eg) of the material used. Particularly, in recent years, light emitting devices made of a nitride based semiconductor material are being commercialized.

Researches on a light emitting device such as a light emitting diode have been actively conducted and technologies for improving the efficiency and reliability of the light emitting device have been limited by developing the structure of the light emitting device and the material applied to the light emitting device .

Accordingly, various new methods for increasing the light efficiency of the light emitting device have been studied. For example, Korean Patent Laid-Open Publication No. 10-2013-0120107 (Application No. 10-2012-0043115, filed by POSTECH, Industry & Academy Collaboration Group, and others) discloses a method of manufacturing a semiconductor device having a nano- A light emitting diode having improved light extraction efficiency using a light extracting structure having a lower refractive index in a region and a manufacturing method thereof are disclosed.

In another example, Korean Patent Laid-Open Publication No. 10-2007-0075592 (Application No. 10-2006-0004013, Applicant Seoul Biosys) discloses a method for manufacturing a mother board, Discloses a technique of manufacturing a light emitting diode including a first semiconductor layer which is unevenly formed by a reverse surface of an uneven surface to prevent light loss due to internal reflection and improve light extraction efficiency.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a highly reliable light emitting device and a method of manufacturing the same.

It is another object of the present invention to provide a light emitting device having improved luminous efficiency and a method of manufacturing the same.

Another aspect of the present invention is to provide a method of manufacturing a light emitting device that minimizes deterioration of a light emitting structure in which light is emitted and maximizes luminous efficiency.

The technical problem to be solved by the present invention is not limited to the above.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device.

According to one embodiment, a method of manufacturing a light emitting device includes the steps of preparing a light emitting structure, core shell particles having a core portion and a shell portion surrounding the core portion, Forming a hollow particle on the light emitting structure, and forming a hollow particle on the light emitting structure by evaporating the core portion and leaving the shell portion.

According to one embodiment, the shell portion may have a higher evaporation temperature than the core portion.

According to one embodiment, the step of forming the hollow particles may include heat treating the light emitting structure at a processing temperature higher than the evaporation temperature of the core portion and lower than the evaporation temperature of the shell portion.

According to one embodiment, the shell portion may include a material having a refractive index lower than that of the light emitting structure and higher than that of air.

According to one embodiment, the core portion may be formed of polystyrene, and the shell portion may be formed of silicon oxide.

According to an embodiment, the light extraction efficiency of light emitted from the light emitting structure may be increased as the thickness of the remaining shell part increases, within a range of the thickness of the shell part being 70 nm or less.

According to one embodiment, the light emitting structure may include a gallium nitride based semiconductor layer.

According to one embodiment, the light emitting structure includes a substrate, a first semiconductor layer of a first conductivity type on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer of a second conductivity type, Layer, and the core shell particle and the hollow particle may be in contact with the second semiconductor layer.

In order to solve the above technical problem, the present invention provides a light emitting device.

According to one embodiment, a light emitting device includes a light emitting structure including a semiconductor layer having a first refractive index, and a core region disposed on the light emitting structure and having a second refractive index lower than the first refractive index, And a shell portion having a third refractive index lower than the first refractive index and higher than the second refractive index.

According to one embodiment, the thickness of the shell portion may be less than or equal to 70 nm.

According to one embodiment, a part of the light emitted from the light emitting structure is emitted to the outside along the medium in which the refractive index gradually decreases through the semiconductor layer and the shell in order, and the other part of the light emitted from the light emitting structure May be suppressed into the core region and reflected by the inner wall of the shell portion.

According to one embodiment, the core region may include one having the same refractive index as air.

According to the embodiment of the present invention, on the light emitting structure, core shell particles having a core portion and a shell portion are formed, the core portion is evaporated, and the shell portion is left so that hollow particles can be formed. The core portion is evaporated at a temperature lower than the evaporation temperature of the shell portion and the temperature at which the light emitting structure is deteriorated, so that the hollow particles can be manufactured while minimizing deterioration of the light emitting structure. Accordingly, a highly reliable light emitting device and a manufacturing method thereof can be provided.

In addition, the light extraction efficiency of light emitted from the light emitting structure is improved by the hollow entry, thereby providing a light emitting device with high light emission.

1 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
2 to 4 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
5 is a graph for explaining EL (electroluminescence) of a light emitting device manufactured according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
6 is a graph illustrating the luminous efficiency according to the thickness of the shell part of the hollow particles included in the light emitting device manufactured according to the method of manufacturing the light emitting device according to the embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

FIG. 1 is a flow chart for explaining a method of manufacturing a light emitting device according to an embodiment of the present invention, and FIGS. 2 to 4 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, a light emitting structure is prepared (S110). The light emitting structure includes a substrate 100, an undoped semiconductor layer 105, a first semiconductor layer 110 of a first conductivity type, an active layer 115, and a second semiconductor of a second conductivity type. Layer 120 as shown in FIG.

The substrate 100 may be any one of a semiconductor substrate (for example, a silicon substrate or a compound semiconductor substrate), a glass substrate, or a metal substrate. Alternatively, the substrate 100 may be formed of any one of sapphire (Al 2 O 3 ), GaN, SiC, Si, ZnO, GaAs, InP, Ge, Ga 2 O 3 , ZrB 2 or GaP. According to one embodiment, the substrate 100 may be flexible.

The undoped semiconductor layer 105 may be provided on the substrate 100. The undoped semiconductor layer 105 may be formed of an undoped GaN layer (undoped-GaN, U-GaN). For example, the undoped semiconductor layer 105 may be formed using a liquid phase epitaxy (LPE), a vapor phase epitaxy (VPE), a molecular beam epitaxy (MBE) And may be formed using any one of metal organic chemical vapor deposition (MOCVD).

Although not shown in the figure, a buffer layer may be further disposed between the substrate 100 and the undoped semiconductor layer 105. The buffer layer may be for relieving stress due to lattice mismatch between the substrate 100 and the undoped semiconductor layer 105. For example, the buffer layer may include at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

The first semiconductor layer 110 may be provided on the undoped semiconductor layer 105. The first semiconductor layer 110 may be doped with a dopant of a first conductivity type. According to one embodiment, the first semiconductor layer 110 may be an N-type semiconductor layer doped with an N-type dopant. For example, the N-type dopant may include at least one of silicon (Si), germanium (Ge), tin (Sn), tellurium (Te), and selenium (Se) ) May include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN doped with the N-type dopant. According to one embodiment, the first semiconductor layer 110 may be formed by an epitaxial process using the undoped semiconductor layer 105 as a seed layer.

The second semiconductor layer 120 may be provided on the first semiconductor layer 110 and the active layer 115. The second semiconductor layer 120 may be doped with a dopant of a second conductivity type different from the first conductivity type. According to one embodiment, the second semiconductor layer 120 may be a P-type semiconductor layer doped with a P-type dopant. For example, the P-type dopant may include at least one of magnesium (Mg), zinc (Zn), barium (Ba), and calcium (Ca), and the second semiconductor layer 120 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, or AlInN doped with the P-type dopant. The second semiconductor layer 140 may be formed by any one of a liquid crystal growth method, a vapor phase growth method, a molecular beam growth method, and an organic metal chemical vapor deposition method.

The active layer 115 may be provided between the first semiconductor layer 110 and the second semiconductor layer 120. The active layer 115 combines electrons supplied from the first semiconductor layer 110 and holes supplied from the second semiconductor layer 120 to generate excitons, and the energy state of the excitons is changed to emit light can do.

The active layer 115 may have a multi-quantum well (MQW) structure, a quantum dot structure, or the like. For example, the active layer 130115 may be an InGaN film, an InGaN film doped with zinc (Zn), or silicon (Si). For example, the active layer 130115 can be formed by any one of a liquid growth method, a vapor phase growth method, a molecular beam growth method, and an organic metal chemical vapor deposition method.

The light emitting structure may further include a first electrode 132 connected to the first semiconductor layer 110 and a second electrode 134 connected to the second semiconductor layer 120. The first electrode 132 may be provided on the upper surface of the first semiconductor layer 110. The second electrode 134 may be provided on the upper surface 120A of the second semiconductor layer 120. [ For example, the first electrode 132 and the second electrode 134 may be formed of at least one of aluminum (Al), titanium (Ti), nickel (Ni), indium (In) .

Referring to FIGS. 1 and 3, core-shell particles 140 may be formed on the light-emitting structure S120. Specifically, the core shell particles 140 may be formed on the upper surface 120A of the second semiconductor layer 120 of the light emitting structure. According to one embodiment, the core shell particles 140 may be formed on the upper surface 120A of the second semiconductor layer 120 by a spin coating method.

The core shell particle 140 may include a core portion 142 and a shell portion 144 that substantially conformally surrounds the core portion 142. The core shell particles 140 may be in direct contact with the upper surface 120A of the second semiconductor layer 120. Specifically, the shell portion 144 of the core shell particle 140 may be in direct contact with the upper surface 120A of the second semiconductor layer 120. According to one embodiment, the thickness of the shell portion 144 may be substantially uniform.

The core portion 142 and the shell portion 144 may be formed of different materials. According to one embodiment, the core portion 142 may have an evaporation temperature lower than a temperature at which the light emitting structure deteriorates, and the shell portion 144 may have a higher evaporation temperature than the core portion 142 Or the like. For example, the core portion 142 may be formed of polystyrene, and the shell portion 144 may be formed of silicon oxide. In another example, the core portion 142 may be formed of an organic material, and the shell portion 144 may be formed of an aluminum oxide (e.g., Al 2 O 3 ).

The shell 144 may be formed of a material that is lower than the refractive index of the light emitting structure and higher than the refractive index of air. Specifically, the shell 144 may be formed of a material having a lower refractive index than the refractive index of the second semiconductor layer 120 of the light emitting structure. For example, when the second semiconductor layer 120 is formed of gallium nitride, the shell portion 144 may be formed of silicon oxide (for example, SiO 2) having a refractive index lower than that of gallium nitride (about 2.5) 2 ).

Referring to FIGS. 1 and 4, hollow portions 140H may be formed on the light emitting structure by evaporating the core portion 142 and leaving the shell portion 144 (S130).

According to one embodiment, the thickness of the shell portion 144 may be 70 nm or less. In the range where the thickness of the shell part 144 is 70 nm or less, the light extraction efficiency emitted from the light emitting structure can be increased as the thickness of the shell part 144 increases. On the other hand, as the thickness of the shell part 144 increases, it may not be easy to evaporate the core part 142. Therefore, the maximum thickness of the shell part 144 may be 70 nm.

According to the embodiment of the present invention, as described above, the core portion 142 may have an evaporation temperature lower than a temperature at which the light emitting structure deteriorates, 142). ≪ / RTI > Accordingly, the light emitting structure is heat-treated at a process temperature higher than the evaporation temperature of the core portion 142, lower than the evaporation temperature of the shell portion 144, and lower than the temperature at which the light emitting structure deteriorates, At the same time as minimizing the deterioration of the structure, the core portion 142 is evaporated and the shell portion 144 can remain. Hollow particles 140H may be formed by evaporating the core portion 142 and forming a hollow portion 142H and hollow portion 142H having the remaining shell portion 144 surrounding the hollow portion 142H.

For example, when the core portion 142 is formed of polystyrene and the shell portion 144 is formed of silicon oxide, the light emitting structure 140 may be formed at a process temperature of about 500 degrees Celsius higher than the evaporation temperature of the polystyrene, So that hollow particles having a silicon oxide shell portion can be formed.

If a plasma etching method or a chemical etching method is performed to form hollow particles on a light emitting structure (for example, a light emitting diode), the light emitting structure is deteriorated in a process of plasma etching or chemical etching . As a result, reliability and / or luminous efficiency of the light emitting element can be lowered.

However, as described above, according to the embodiment of the present invention, the core portion 142 can be evaporated at a temperature lower than the evaporation temperature of the shell portion 144 and the temperature at which the light emitting structure deteriorates. Accordingly, the hollow particles 140H may be formed on the light emitting structure with the deterioration of the light emitting structure being minimized. Thus, a highly reliable light emitting device and a manufacturing method thereof can be provided.

1 to 4, on the light emitting structure including the first semiconductor layer 110, the active layer 115, and the second semiconductor layer 120, After forming the hollow particles by the method described with reference to FIG. 4, a first electrode and a second electrode respectively connected to the first semiconductor layer 110 and the second semiconductor layer 120 may be formed. That is, after the heat treatment for forming the hollow particles is performed, the first electrode and the second electrode may be formed. Therefore, even if the first electrode and / or the second electrode includes a metal that can be deteriorated by the heat treatment, the first electrode and / or the second electrode may not be deteriorated by the heat treatment.

Next, a light emitting device according to an embodiment of the present invention will be described with reference to FIG.

Referring to FIG. 4, the light emitting device according to the embodiment of the present invention may include the light emitting structure described with reference to FIGS. 1 to 4 and the light extracting particles 140H on the light emitting structure.

The light emitting structure may include a substrate 100, an undoped semiconductor layer 105 on the substrate 100, a non-doped semiconductor layer 105 on the undoped semiconductor layer 105, as described with reference to FIGS. A first semiconductor layer 110, an active layer 115 on the first semiconductor layer 110, and a second semiconductor layer 120 on the active layer 115. The light generated in the active layer 115 may be emitted to the outside through the second semiconductor layer 120 having the first refractive index. The first refractive index may be greater than the refractive index of the air.

The light extracting particles 140H may include a core region 142H and a shell portion 144 surrounding the core region 142H. The core region 142H may have a second refractive index lower than the first refractive index. According to one embodiment, the refractive index of the core region 142H may be substantially the same as the refractive index of air. The shell portion 144 may have a third refractive index that is lower than the first refractive index and higher than the second refractive index.

According to one embodiment, the light extracting particles 140H may correspond to the hollow particles 140H described with reference to Figs. 1 to 4 described above, and the core region 142H and the shell portion 144 may correspond to the light- May correspond to the hollow 142H and the shell portion 144 described with reference to Figs. 1 to 4, respectively, described above.

According to the embodiment of the present invention, the shell part 144 included in the light extracting particles 140H is formed of a material lower than the refractive index of the second semiconductor layer 120 of the light emitting structure and higher than the refractive index of air . The light generated in the active layer 115 and transmitted through the second semiconductor layer 120 may be emitted to the outside (air) through the shell part 144 of the light extracting particles 140H. That is, the light generated in the active layer 115 passes through the second semiconductor layer 120 and the shell part 144 in order, and may be emitted to the outside (air) along the medium in which the refractive index gradually decreases . Accordingly, light emitted from the active layer 115 can efficiently be emitted to the outside, thereby improving light extraction efficiency.

In addition, according to the embodiment of the present invention, the light generated in the active layer 115 and entering the inside of the light extracting particle 140H, that is, the core region 142H, And may be reflected within the core region 142H. That is, the light generated in the active layer 115 and transmitted through the second semiconductor layer 120 and emitted to the outside is efficiently and efficiently transmitted through the core region 142H of the light extracting particles 140H on the light- ≪ / RTI > As a result, a light emitting device with improved light emitting efficiency can be provided.

If the light extracting particles 140H are omitted on the light emitting structure and the light emitted from the active layer 115 is transmitted through the second semiconductor layer 120 to be directly supplied to the outside air, The Snell's law (Snell's law) by the refractive index difference between the semiconductor layer 120 and the outside air (for example, about 2.5 when the second semiconductor layer 120 is formed of gallium nitride, a part of the light emitted from the active layer 115 may be totally internally reflected. In addition, a part of the light not totally internally reflected may be Fresnel reflection. Accordingly, the light emitted from the active layer 115 can not efficiently be emitted to the outside.

However, as described above, according to the embodiment of the present invention, the light emitted from the active layer 115 is incident on the second semiconductor layer 120 and the shell portion 144 whose refractive index gradually decreases gradually, The light is efficiently scattered by the core region 142H of the light extracting particle 140H, as well as light reflection is reduced in turn. Accordingly, a light emitting device with high light emission with improved light extraction efficiency and a method of manufacturing the same can be provided.

Hereinafter, characteristics evaluation results of the light emitting device manufactured according to the method of manufacturing the light emitting device according to the embodiment of the present invention will be described.

5 is a graph for explaining EL (electroluminescence) of a light emitting device manufactured according to a method of manufacturing a light emitting device according to an embodiment of the present invention.

Referring to FIG. 5, core shell particles having a gallium nitride-based light emitting diode, a polystyrene core portion, and a SiO 2 shell portion were prepared. After spin-coated on the light emitting diode of the core-shell particles, to prepare a device having a hollow SiO 2 particles according to an embodiment of the present invention the heat treatment for 30 minutes at 500 degrees Celsius.

As a first comparative example of the present invention, a light emitting device in which the hollow particles are omitted on a light emitting diode was prepared, and as a second comparative example of the present invention, a light emitting device having SiO 2 particles on a light emitting diode Prepared.

As can be seen from FIG. 5, in comparison with the light emitting device according to the first comparative example in which the hollow particles are omitted on the light emitting diode, the light emitting device having SiO 2 particles on the light emitting diode according to the second comparative example, It can be seen that the luminous efficiency of the light emitting device having SiO 2 hollow particles on the light emitting diode is higher. Further, it can be seen that the luminous efficiency of the light emitting device according to the embodiment of the present invention is improved as compared with the light emitting device according to the second comparative example.

6 is a graph illustrating the luminous efficiency according to the thickness of the shell part of the hollow particles included in the light emitting device manufactured according to the method of manufacturing the light emitting device according to the embodiment of the present invention.

Referring to FIG. 6, a light emitting device having hollow particles having SiO 2 shell portions of various thicknesses according to an embodiment of the present invention was manufactured by the method described with reference to FIG. As can be seen from FIG. 6, it can be confirmed that the light extraction efficiency is improved as the thickness of the shell part of the hollow particle increases. Further, even if the thickness of the shell portion is thicker than 70 nm, it can be confirmed that the light extraction efficiency is not improved. That is, in the case of manufacturing the hollow particles by evaporating the core portion according to the embodiment of the present invention described with reference to FIGS. 1 to 4, it is preferable that the thickness of the shell portion is 70 nm or less to facilitate evaporation of the core portion It can be confirmed that this method maximizes the light extraction efficiency.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

100: substrate
105: undoped semiconductor layer
110: first semiconductor layer
115:
120: second semiconductor layer
132: first electrode
134: second electrode
140: core shell particle
140H: hollow particles, light extracting particles
142: core part
142H: hollow, core region
144:

Claims (13)

Preparing a light emitting structure;
Forming a core shell particle on the light emitting structure, the core shell particle having a core portion and a shell portion surrounding the core portion; And
Evaporating the core portion and leaving the shell portion to form hollow particles on the light emitting structure,
Within the range where the thickness of the shell portion is 70 nm or less,
Wherein the light extracting efficiency of light emitted from the light emitting structure is increased as the thickness of the remaining shell part is increased.
The method according to claim 1,
Wherein the shell portion has a higher evaporation temperature than the core portion.
3. The method of claim 2,
Wherein the forming of the hollow particles includes heat treating the light emitting structure at a processing temperature higher than the evaporation temperature of the core portion and lower than the evaporation temperature of the shell portion.
The method according to claim 1,
Wherein the shell portion has a refractive index lower than a refractive index of the light emitting structure and a value higher than a refractive index of air.
The method according to claim 1,
Wherein the core portion is formed of polystyrene, and the shell portion is formed of silicon oxide.
delete The method according to claim 1,
Wherein the light emitting structure includes a gallium nitride based semiconductor layer.
The method according to claim 1,
The light-
Board;
A first semiconductor layer of a first conductivity type on the substrate;
An active layer on the first semiconductor layer; And
A second semiconductor layer of a second conductivity type disposed on the active layer,
Wherein the core shell particle and the hollow particle contact the second semiconductor layer.
A light emitting structure including a semiconductor layer having a first refractive index; And
A core region disposed on the light emitting structure and having a second refractive index lower than the first refractive index and a shell portion surrounding the core region and having a shell portion having a third refractive index lower than the first refractive index and higher than the second refractive index, Comprising extracting particles,
Within the range where the thickness of the shell portion is 70 nm or less,
Wherein light extraction efficiency of light emitted from the light emitting structure is increased as the thickness of the shell portion increases.
10. The method of claim 9,
And the thickness of the shell portion is 70 nm or less.
10. The method of claim 9,
A part of the light emitted from the light emitting structure passes through the semiconductor layer and the shell part in order and is emitted to the outside along a medium in which the refractive index is gradually decreased,
Wherein another portion of the light emitted from the light emitting structure is suppressed into the core region and reflected by the inner wall of the shell portion.
10. The method of claim 9,
Wherein the core region has the same refractive index as air. delete
KR1020140109315A 2014-08-22 2014-08-22 Light emitting device, and method of fabricating the same KR101636140B1 (en)

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KR102017161B1 (en) * 2017-12-11 2019-09-02 서울과학기술대학교 산학협력단 Method for Manufacturing p-type oxide thin film
KR102144987B1 (en) * 2018-08-13 2020-08-14 고려대학교 산학협력단 Refractive index adjustable nano particle, Light scattering layer comprising the same, and Method for producing the same

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