KR101634673B1 - Manufacturing Apparatus For Bulk Single Crystal of Compound Semiconductor - Google Patents

Manufacturing Apparatus For Bulk Single Crystal of Compound Semiconductor Download PDF

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Publication number
KR101634673B1
KR101634673B1 KR1020150063634A KR20150063634A KR101634673B1 KR 101634673 B1 KR101634673 B1 KR 101634673B1 KR 1020150063634 A KR1020150063634 A KR 1020150063634A KR 20150063634 A KR20150063634 A KR 20150063634A KR 101634673 B1 KR101634673 B1 KR 101634673B1
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South Korea
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container
wall
temperature
raw material
heater
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KR1020150063634A
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Korean (ko)
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최인석
김종엽
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주식회사 썸백
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

An apparatus for producing a bulk single crystal of a compound semiconductor according to the present invention comprises a container outer wall having a cylindrical shape, a container bottom surface having a first through hole at a central portion thereof, and a container inner wall extending upward from the first through- And a container cover for sealing an upper end of the raw material container; A disk-shaped longitudinal substrate; An elevating mechanism for vertically moving the sown substrate upward and downward; A cylindrical base plate guiding unit for guiding the vertical movement of the longitudinal base plate; a frame outer wall formed to include the container base and the longitudinal base plate guiding unit therein; A guide frame made of a heat insulating material including a ceiling portion; An upper heater and a lower heater installed between the heat blocking wall of the heating furnace and the guide frame; An upper and lower separation wall installed across the side wall of the heating furnace and the guide frame; A first temperature sensor for measuring the temperature of the inner upper center of the raw material container; A second temperature sensor for measuring the temperature of the upper heater; A third temperature sensor for measuring the temperature of the lower heater; And the like.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an apparatus for manufacturing a bulk single crystal of a compound semiconductor,

The present invention relates to a manufacturing apparatus for manufacturing a bulk single crystal of a compound semiconductor such as silicon carbide or aluminum nitride.

In order to produce a bulk single crystal of a compound semiconductor such as silicon carbide or aluminum nitride, a sublimation method is mainly used.

The sublimation method is a method of sublimating a solid raw material (for example, silicon carbide or aluminum nitride) at a high temperature of about 2000 ° C or higher in a growth vessel to grow crystals of a raw material on a seed substrate (seed substrate).

A conventional silicon carbide bulk single crystal manufacturing apparatus will now be described in more detail with reference to FIG.

The carbon growth vessel 10 is divided into an upper growth chamber 14 and a lower sublimation chamber 12. The silicon carbide powder as raw material powder 1 is introduced into the sublimation chamber 12 and the sublimated silicon carbide is deposited and grown on the seed substrate 20 of the ceiling of the growth chamber 14 to produce the bulk single crystal 2 .

Such a growth vessel 10 is disposed in a heat insulating material chamber 60 and heated by the heater 50 so that the temperature of the growth vessel is not released to the outside. Sublimation of silicon carbide and crystal growth occur in a reduced pressure inside the growth vessel 10 and in an inert gas atmosphere. The heater 50 preferably heats the sublimation chamber 12 such that the temperature of the growth chamber 14 is lower than the temperature of the sublimation chamber 12 so that the sublimed silicon carbide is crystal-grown on the seed substrate 20. However, Even if both the chamber 14 and the sublimation chamber 12 are heated, the temperature of the central portion of the growth vessel 10 is lower than the wall of the growth vessel 10 close to the heater 50, It is possible.

However, in the above conventional technology, it is difficult to control the temperature distribution inside the growth chamber because the growth chamber, which requires a lower temperature than the sublimation chamber, is located above the sublimation chamber, and thus polycrystals are generated, And there is a problem that it is lowered.

In addition, since the single crystal grows from the seed substrate toward the bottom, there arises a problem that the single crystal grows larger and becomes separated from the seed substrate. Further, there is a problem that mass production of the bulk single crystal is difficult due to the limited size of the growth chamber and the sublimation chamber.

JP 2012-206875 A, 2012.25.25., Drawing 1

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide a method of manufacturing a bulk single crystal by appropriately controlling sublimation and single crystal growth temperature, do.

According to an aspect of the present invention, there is provided an apparatus for producing a bulk single crystal of a compound semiconductor,

A container inner wall extending upward from the first through hole of the bottom surface of the container at a lower height than the outer wall of the container; A raw material container in the form of a cylinder including a container cover for sealing an upper end of the raw material container;

A disc-shaped seed substrate having a diameter larger than that of the first through-hole on the bottom surface of the container;

An elevating mechanism installed at a lower portion of the longitudinal substrate for moving the longitudinal substrate up and down;

A cylindrical base plate guide unit extending from a lower end of the base plate and guiding up and down movement of the base plate; A guide frame made of a heat insulating material including a frame outer wall and a frame ceiling portion formed to be included in the frame;

An upper heater and a lower heater installed between the heat blocking wall of the heating furnace and the guide frame;

An upper and lower separation wall installed across the guide frame and the heat end wall of the heating furnace so that the upper heater can heat each of the raw material containers and the lower heater respectively;

A first temperature sensor for measuring the temperature of the inner upper center of the raw material container;

A second temperature sensor for measuring the temperature of the upper heater;

A third temperature sensor for measuring the temperature of the lower heater; And the like.

The elevating mechanism may further include a cooling unit for cooling the seed substrate.

It is preferable that a load cell for measuring the amount of the single crystal formed on the seed substrate is attached to the elevating mechanism.

Since the sublimation and monocrystal growth temperature can be appropriately controlled, the present invention is not only capable of obtaining a bulk monocrystal of high quality, but also capable of mass production.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a conventional apparatus for producing a silicon carbide bulk single crystal. FIG.
Fig. 2 is an embodiment of a bulk single crystal manufacturing apparatus according to the present invention. Fig.

Hereinafter, the present invention will be described in more detail with reference to the drawings in accordance with embodiments thereof. In this embodiment, an apparatus for obtaining a silicon carbide (SiC) bulk single crystal will be described.

2 (a), 2 (b), 2 (c) and 2 (d) show the entire structure of the apparatus for manufacturing a bulk single crystal of the present embodiment, Fig.

The raw material container 100 includes a container outer wall 110 having a cylindrical shape, a container bottom surface 120 having a first through hole 125 at a central portion thereof, (140) that seals the top of the container (140). The container inner wall 130 extends upward from the first through hole 125 on the bottom surface of the container and has a height lower than the container outer wall 110 so that interference with the container cover 140 does not occur.

The container lid 140 is opened and the silicon carbide powder is injected into the space formed by the container outer wall 110, the container bottom surface 120, and the container inner wall 130. The raw material container 100 is preferably made of a graphite material having high heat resistance and high surface flatness.

The seed substrate 200, in which the sublimated silicon carbide is adhered to the surface and is crystal-grown, has a substantially disc shape and has a diameter larger than the first through hole 125 of the container bottom surface 120. In addition, the slave substrate 200 can be raised and lowered by an elevating mechanism 300 installed at a lower portion thereof. As the crystal grows in the seed substrate 200, the seed substrate 200 is transported downward. When the distance between the single crystal formed on the seed substrate 200 and the source container 100 is made constant, a monocrystal of uniform quality can be obtained It is because. In this embodiment, the cooling means 900 for lowering the temperature of the slave substrate is provided in the elevating mechanism 300. However, if the temperature can be controlled by the lower heater 700, the cooling means 900 may be omitted. The cooling means 900 in the present embodiment is implemented in such a manner that cooling water flows along a channel formed in the piston constituting the elevating mechanism 300. [

The raw material container 100 and the slave substrate 200 are installed in a guide frame 400. The guide frame 400 has a circular container holder 410 for receiving the raw material container 100 therein and has a second through hole 415 at the center of the container holder 410. And a longitudinal substrate guide part 420 extending downward from the lower end of the container holder 410 and guiding up and down movement of the longitudinal substrate 200 is provided. The frame outer wall 430 and the frame ceiling portion 440 are formed so as to include the container support 410 and the longitudinal substrate guide portion 420 therein.

The heater is divided into an upper heater (600) and a lower heater (700). The upper heater 600 is installed between the railway wall 500 of the heating furnace and the guide frame 400 so as to heat the raw material container 100 and the lower heater 700 respectively.

Such individual heating is enabled by the upper and lower separation walls 550 installed across the space between the heating end wall 500 of the heating furnace and the guide frame 400.

In order to control the temperature, a first temperature sensor 810 for measuring the temperature at the center of the inner upper end of the raw material container 100, a second temperature sensor 820 for measuring the temperature of the upper heater 600, And a third temperature sensor 830 for measuring the temperature of the second temperature sensor 830.

Hereinafter, the operation of the bulk single crystal manufacturing apparatus of the present invention will be described.

First, raw material powder (1) is filled into raw material container (100). In this embodiment, since silicon carbide is adopted as a compound semiconductor, silicon carbide powder is introduced. If aluminum nitride is selected as the compound semiconductor, aluminum nitride powder and, if selenium zinc is selected, selenium zinc powder is supplied.

The inside of the heating furnace is repeatedly injected with vacuum and inert gas to finally form a reduced pressure or atmospheric pressure atmosphere while operating the upper heater 600 and the lower heater 700 to generate sublimation gas in the raw powder 1 . It is already known that sublimation is smooth in a reduced pressure atmosphere at about 2000 ° C. The sublimated raw material diffuses into the space formed by the interior of the raw material container 100 and the longitudinal substrate guide part 420 and the longitudinal substrate 200 and precipitation occurs in the sown substrate 200 having a temperature lower than that of the raw material container 100 The single crystal 2 grows on the seed substrate 200.

The seed substrate 200 in which the raw material container 100 containing the raw material powder 1 to be sublimated at a high temperature is located at an upper position and the single crystal 2 is grown at a lower temperature than the raw material container 100 due to precipitation, Meanwhile, the upper and lower temperatures can be more easily controlled by the upper and lower separation walls 550 provided to separate and control the temperature of the raw material container 100 and the sown substrate 200. Further, temperature control of the seed substrate 200 can be assisted by the cooling means 900, so that more efficient temperature control is possible.

The single crystals 2 precipitated and grown on the seed substrate 200 are grown above the seed substrate 200 as the growth continues and approach the first through hole 125 side. It is preferable to lower the elevating mechanism 300 to adjust the position where the single crystal 2 is precipitated and grown constantly. It is more preferable to grasp the amount of the single crystals deposited by the load cell (not shown) provided on the side of the elevating mechanism to determine the amount of movement of the elevating mechanism, but it is also possible to control the amount of movement empirically.

According to this embodiment as described above, the sublimation and the growth temperature of the single crystal can be controlled appropriately, so that a high-quality bulk single crystal can be obtained and mass production can be performed.

In the above embodiment, the driving relationship of the elevating mechanism, the circulation relation of the cooling means, the constitution related to the supply of the vacuum and the inert gas, and the measurement and control of the temperature are not described in detail. However, There will be no difficulty in understanding and implementing the invention.

1: raw material powder 2: single crystal 10: growth vessel 12: sublimation chamber
14: growth chamber 20, 200: longitudinal substrate 50: heater 60:
100: raw material container 110: container outer wall 120: container bottom surface 125: first through hole
130: container inner wall 140: container lid 300: elevating mechanism 400: guide frame
410: container holder 415: second through hole 420: longitudinal substrate guide portion
430: frame outer wall 440: frame ceiling part 500: heat blocking wall
550: upper and lower separation wall 600: upper heater 700: lower heater
810,820,830: First, second and third temperature sensors

Claims (3)

A container inner wall extending upward from the first through hole of the bottom surface of the container at a lower height than the outer wall of the container; A raw material container in the form of a cylinder including a container cover for sealing an upper end of the raw material container;

A disc-shaped seed substrate having a diameter larger than that of the first through-hole on the bottom surface of the container;
An elevating mechanism installed at a lower portion of the longitudinal substrate for moving the longitudinal substrate up and down;

A cylindrical base plate guide unit extending from a lower end of the base plate and guiding up and down movement of the base plate; A guide frame made of a heat insulating material including a frame outer wall and a frame ceiling portion formed to be included in the frame;

An upper heater and a lower heater installed between the heat blocking wall of the heating furnace and the guide frame;

An upper and lower separation wall installed across the guide frame and the heat end wall of the heating furnace so that the upper heater can heat each of the raw material containers and the lower heater respectively;

A first temperature sensor for measuring the temperature of the inner upper center of the raw material container;
A second temperature sensor for measuring the temperature of the upper heater;
A third temperature sensor for measuring the temperature of the lower heater; Wherein the compound semiconductor is a compound semiconductor.
The method according to claim 1,
Wherein the elevating mechanism further comprises a cooling means for cooling the seed substrate.
The method according to claim 1,
Wherein the elevating mechanism is equipped with a load cell for measuring the amount of the single crystal formed on the seed substrate.
KR1020150063634A 2015-05-07 2015-05-07 Manufacturing Apparatus For Bulk Single Crystal of Compound Semiconductor KR101634673B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005263553A (en) * 2004-03-18 2005-09-29 Sumitomo Electric Ind Ltd Method and apparatus for producing compound semiconductor single crystal
JP2009209015A (en) * 2008-03-05 2009-09-17 Denso Corp Apparatus for producing silicon carbide single crystal
JP2012206875A (en) 2011-03-29 2012-10-25 Shin Etsu Handotai Co Ltd APPARATUS FOR GROWING SiC
KR101333668B1 (en) * 2013-06-26 2013-11-27 주식회사 에이에스이 Auto seeding system of single crystal growth furnace

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005263553A (en) * 2004-03-18 2005-09-29 Sumitomo Electric Ind Ltd Method and apparatus for producing compound semiconductor single crystal
JP2009209015A (en) * 2008-03-05 2009-09-17 Denso Corp Apparatus for producing silicon carbide single crystal
JP2012206875A (en) 2011-03-29 2012-10-25 Shin Etsu Handotai Co Ltd APPARATUS FOR GROWING SiC
KR101333668B1 (en) * 2013-06-26 2013-11-27 주식회사 에이에스이 Auto seeding system of single crystal growth furnace

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