KR101621377B1

KR101621377B1 - Gas supply device and atomic layer deposition apparatus for large substrate having the same

Info

Publication number: KR101621377B1
Application number: KR1020140193421A
Authority: KR
Inventors: 박성현; 신인철; 이근우; 김경준
Original assignee: 주식회사 케이씨텍
Priority date: 2014-12-30
Filing date: 2014-12-30
Publication date: 2016-05-16

Abstract

Disclosed is a gas supply apparatus capable of processing a large area substrate and a large-area atomic layer deposition apparatus having the same. A gas supply apparatus for a large-area atomic layer deposition apparatus includes a first housing in which a first buffer section communicating with a process chamber is formed and which is provided rotatably within the first buffer section, A first opening and closing unit of a cylindrical shape having a first supply passage formed to be selectively in communication with the first buffer unit as it rotates about a rotational axis at the center of the end face, A second buffer for forming a second buffer, a second housing for providing a second deposition gas, and a second buffer which is rotatably provided in the second buffer and selectively communicates with the second buffer, Wherein the first opening and closing part and the second opening and closing part are configured such that the first supply passage is in communication with the first opening and closing part Help in the angle between the second supply passage in communication with the second opening and closing part may be a 90 ° difference in rotation nadorok.

Description

TECHNICAL FIELD [0001] The present invention relates to a gas supply apparatus and a large-area atomic layer deposition apparatus having the same,

The present invention relates to an atomic layer deposition apparatus, and more particularly, to a gas supply apparatus capable of processing a large area substrate and a large-area atomic layer deposition apparatus having the same.

In recent years, as the degree of integration of semiconductor devices increases in semiconductor manufacturing processes, there is an increasing demand for microfabrication. That is, in order to form a fine pattern and highly integrate the cells on one chip, a new material having a thin film thickness reduction and a high dielectric constant should be developed. Particularly, when a step is formed on the surface of the substrate, it is very important to ensure step coverage, step coverage, and uniformity within the wafer, which smoothly cover the surface. An atomic layer deposition (ALD) method, which is a method of forming a thin film having a minute thickness at the atomic layer level, has been proposed to meet such a requirement.

The ALD process is a method of forming a monolayer by using chemisorption and desorption processes by the surface saturated reaction of reactants on the surface of the substrate. Is a possible thin film deposition method.

The ALD process alternately introduces two or more source gases, respectively, and prevents the source gases from mixing in the gaseous state by introducing purge gas, which is an inert gas, between the inlet of each source gas. That is, one source gas is chemically adsorbed on the substrate surface, and then another source gas reacts to generate a further atomic layer on the substrate surface. Then, such a process is repeated at one cycle until a thin film having a desired thickness is formed. Here, the source gas must be chemically adsorbed and chemically reacted only on the substrate surface, so that no other surface reaction occurs until one atomic layer is completely formed.

On the other hand, in the conventional atomic layer deposition apparatus, the process gas flows into the process chamber by the operation of the flow rate controller and the valve. However, since the size of the process chamber is increased as the size of the substrate is increased, it has been difficult to uniformly introduce the process gas into the process chamber in the conventional method. In particular, as the size of the process chamber increases, the number of ports for introducing the process gas must be increased, thereby increasing the number of flow control controllers and valves. Also, considering the flow rate of the process gas, the number of the distribution lines and ports for uniformly sending the position of the first process gas inlet port must also be increased. However, as the number of flow control controllers and valves increases, there is a difference in flow of the process gas due to the flow error of the flow rate controller and the valve. If the complicated distribution lines and ports are not precisely designed, The uniformity of the gas is reduced.

According to embodiments of the present invention, a gas supply apparatus capable of uniformly introducing a process gas into a large process chamber capable of processing a large-area substrate and a large-area atomic layer deposition apparatus having the gas supply apparatus are provided.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to the embodiments of the present invention for achieving the object of the present invention described above, a gas supply device for a large-area atomic layer deposition apparatus includes a first buffer portion in communication with a process chamber, And a first supply passage which is rotatable in the first buffer section and selectively communicates with the first buffer section as it rotates about a rotation axis at the center of the end surface, A second housing provided in parallel with the first housing and having a second buffer portion therein communicating with the process chamber, the second housing providing a second deposition gas, and a second housing rotatably provided in the second buffer portion, And a cylindrical second opening and closing part formed with a second supply passage that selectively communicates with the second buffer part as it rotates around a rotational axis at the center of the end face, The second opening and closing part may be the first supply flow path angle and the second supply passage communicating with the first opening and closing part has a 90 ° difference between nadorok rotation angle at which the communication with the second opening and closing part.

According to one aspect, the first and second housings may be provided with a purge gas supply for supplying purge gas into the process chamber through the interior of the first and second housings. In addition, the purge gas supply part is formed to provide a purge gas into the process chamber through the first and second opening and closing parts, and can continuously provide the purge gas. Here, the purge gas supply unit may be provided on one side of the first housing and the second housing, respectively. The purge gas supply unit may be formed at a portion where the first and second housings are coupled to provide the purge gas to the first and second opening and closing units. For example, the purge gas supply unit may include a first purge supply passage communicated with the first opening and closing part in the first housing, a second purge supply passage communicating with the second opening and closing part in the second housing, And a third purge supply passage communicating with the first opening and closing part and the second opening and closing part through a coupling part of the second housing.

According to one aspect of the present invention, the first opening and closing part is formed with a plurality of first supply passages parallel to the cross-sectional diameter of the cylinder and through the side face of the cylinder, the second opening and closing part is parallel to the cross- A plurality of second supply passages may be formed.

According to one aspect, the first opening and closing part and the second opening and closing part can rotate at the same angular velocity.

According to another aspect of the present invention, there is provided a large-area atomic layer deposition apparatus including a process chamber in which a substrate is accommodated and a deposition process is performed, And a gas supply device for supplying a deposition gas into the chamber. The gas supply device includes a first housing provided with a first buffer portion communicating with a process chamber therein and provided with a first deposition gas, a second housing provided rotatably within the first buffer portion, And a second buffer unit that is provided in parallel with the first housing and communicates with the process chamber, the first buffer unit being connected to the first buffer unit, And a second supply unit for supplying a second deposition gas and a second supply unit for supplying a second deposition gas, the second supply unit being rotatably provided in the second buffer unit and selectively communicating with the second buffer unit, Wherein the first opening and closing part and the second opening and closing part are formed in a cylindrical shape having an angle formed between an angle at which the first supply passage communicates with the first opening and closing part, 2 supply passage may be rotated by an angle of 90 [deg.] Between an angle at which the second supply opening and the second opening and closing portion communicate with each other.

According to one aspect of the present invention, an exhaust unit for exhausting exhaust gas from the process chamber is provided on one side of the process chamber, and the exhaust unit includes an exhaust housing in which an exhaust buffer unit communicating with the process chamber is formed, And a cylindrical exhaust opening / closing part which is rotatably provided inside and has a plurality of exhaust holes selectively communicating with the exhaust buffer part as it rotates. Here, the exhaust opening / closing portion may include a plurality of exhaust holes formed through a side surface of the cylinder so as to be parallel to the cross-sectional diameter of the cylinder, and the plurality of exhaust holes may be formed to cross each other at an angle of 90 °.

According to one aspect of the present invention, there is provided a plurality of exhaust sections, and the plurality of exhaust sections can be controlled so that the exhaust openings are communicated with the exhaust buffer section at the same angle.

According to one aspect, a plurality of gas supply devices are provided, and the rotation angle of the cylinder of each gas supply device can be controlled so as to rotate at a constant angle interval.

Various embodiments of the present invention may have one or more of the following effects.

As described above, according to the embodiments of the present invention, the process gas can be uniformly introduced into the large process chamber capable of processing a large area substrate.

In addition, high-pressure uniform gas can be introduced into the large-area atomic layer deposition apparatus to improve process time and process quality.

1 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of a gas supply apparatus according to an embodiment of the present invention.
3 is a cross-sectional view of a gas supply device according to an alternative embodiment of the present invention.
4 is a cross-sectional view of an exhaust part according to an embodiment of the present invention.
5 is a graph illustrating gas supply in an atomic layer deposition apparatus according to an embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference numerals whenever possible, even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the difference that the embodiments of the present invention are not conclusive.

In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

Hereinafter, a gas supply apparatus 13 and an atomic layer deposition apparatus 10 having the same according to embodiments of the present invention will be described in detail with reference to FIGS. 1 to 5. FIG. 1 is a schematic diagram of an atomic layer deposition apparatus 10 according to an embodiment of the present invention, Fig. 2 is a cross-sectional view of a gas supply apparatus 13 according to an embodiment of the present invention, Fig. 3 is a cross- Sectional view of a gas supply device 13 according to an alternative embodiment of the present invention. And FIG. 4 is a cross-sectional view of an exhaust unit 15 according to an embodiment of the present invention. 5 is a graph illustrating gas supply in the atomic layer deposition apparatus 10 according to an embodiment of the present invention.

The atomic layer deposition apparatus 10 includes a process chamber 11 capable of processing a large area substrate, a gas supply apparatus 13 for supplying a deposition gas into the process chamber 11, And an exhaust unit 15 for exhausting the exhaust gas from the exhaust pipe 11.

The substrate to be deposited in this embodiment may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP), or may be a large area substrate. However, the present invention is not limited thereto, and may be a silicon wafer for a semiconductor device.

The gas supply device 13 is formed to provide a predetermined deposition gas into the process chamber 11 and the source gas S and the reactive gas R and the purge gas P are introduced into the process chamber 11 in a predetermined cycle As shown in FIG. The gas supply device 13 includes housings 311 and 321 that provide buffer portions 313 and 323 to which a deposition gas is supplied and a gas supply unit 322 that opens and closes the flow of the deposition gas as it rotates inside the housings 311 and 321 Closing portions 315 and 325, respectively. The supply channels 316 and 326 of the opening and closing units 315 and 325 are connected to the buffer units 313 and 323 and the supply channels 316 and 326 of the gas supply unit 13 as the evaporation gas is continuously flowed and the opening and closing units 315 and 325 are rotated. The deposition gas is introduced into the process chamber 11 and supplied. Here, the gas supply device 13 can selectively block and supply the deposition gas by rotation of the cylindrical opening and closing portions 315 and 325 without a valve.

The gas supply device 13 includes a first supply unit 310 and a second supply unit 320 that supply the source gas S and the reactive gas R, respectively. The first and second housings 311 and 321 may be disposed adjacent to and parallel to each other such that the first and second supply units 310 and 320 are parallel to each other in the flow direction of the deposition gas. Here, the first and second supply units 320 are configured to be substantially identical, but formed so as to alternately supply the source gas S and the reactive gas R.

The first supply part 310 includes a first housing 311 in which a first buffer part 313 is formed to communicate with the process chamber 11 and a second housing part 313 which is rotatable within the first buffer part 313 And a cylindrical first opening / closing unit 315 formed with a hole (hereinafter, referred to as a 'first supply passage 316') which is selectively communicated with the first buffer unit 313 as it rotates . The first supply unit 310 includes a first inlet 312 for supplying the source gas S into the first buffer unit 313 and a first supply port 314 communicating with the process chamber 11, .

The first opening and closing part 315 is rotatably formed in the first buffer part 313 and is cylindrical so as to be orthogonal to the direction in which the source gas S flows. That is, as shown in the drawing, the first opening and closing part 315 is provided so that the central axis of the cross section is orthogonal to the flow direction of the source gas S in the first buffer part 313. The first opening and closing part 315 is formed by passing the first supply passage 316 through the end surface, and may have one hole passing through the center of the cross section or a plurality of holes parallel to the diametrical direction. The source gas S is supplied into the process chamber 11 at a position where the first supply passage 316 communicates with the first buffer portion 313 as the first opening and closing portion 315 rotates, The supply of the source gas S is cut off. That is, the source gas S can be alternately supplied / cut off without a valve or a controller.

And the second supply part 320 is substantially the same as the first supply part 310. [ The second supply unit 320 includes a second housing 321 having a second buffer unit 323 connected to the process chamber 11 and a second housing 321 rotatably installed in the second buffer unit 323 And a cylindrical second opening and closing part 325 formed with a hole (hereinafter, referred to as a 'second supply passage 326') that selectively communicates with the second buffer part 323 as it rotates. The second supply part 320 includes a second inlet 322 for supplying the reaction gas R into the second buffer part 323 and a second supply port 324 communicating with the process chamber 11, .

The second opening and closing part 325 is rotatably formed in the second buffer part 323 and is cylindrical so as to be orthogonal to the direction in which the reaction gas R flows. That is, as shown in the figure, the second opening and closing part 325 is provided so that the central axis of the cross section is orthogonal to the flow direction of the reaction gas R in the second buffer part 323. The second opening / closing portion 325 is formed by passing the second supply passage 326 through the end surface, and may have one hole passing through the center of the cross section or a plurality of holes parallel to the diametrical direction. The reaction gas R is supplied into the process chamber 11 at a position where the second supply passage 326 communicates with the second buffer portion 323 as the second opening and closing portion 325 rotates, The supply of the reaction gas R is interrupted. That is, the reaction gas R can be alternately supplied / blocked without a valve or a controller.

Here, the first supply passage 316 and the second supply passage 326 are formed at intervals of 90 degrees so that the source gas S and the reaction gas R can be alternately provided. Refers to a position where the first supply passage 316 communicates with the first buffer section 313 and a position where the second supply passage 326 communicates with the second buffer section 323 Is spaced by 90 degrees with respect to the rotation angle of the first and second opening and closing portions 315 and 325, respectively.

It should be noted that the present invention is not limited to the drawings and the shapes of the first and second opening and closing portions 315 and 325 and the number and position of the first and second supply passages 316 and 326 may be changed substantially . In the drawing, reference numerals 317 and 327 denote rotation axes of the opening and closing portions 315 and 325, respectively.

In the atomic layer deposition process, purge gas P must be provided between the source gas S and the reactive gas R. [ A purge gas supply part 330 for supplying purge gas P into the process chamber 11 through the first and second supply parts 310 and 320 in the gas supply device 13 is provided . The purge gas supply part 330 is formed to provide the purge gas P into the process chamber 11 through the first and second opening and closing parts 315 and 325. For example, the purge gas supply unit 330 may supply the purge gas P to one side of the first housing 311 and the second housing 321, specifically, to communicate with the first and second opening and closing units 315 and 325, The purge supply passages 331 and 332 are formed. For example, the first and second housings 311 and 321 are coupled to each other in parallel and communicate with the first and second opening and closing portions 315 and 325 at both sides of the first and second housings 311 and 321, So that the purge supply passages 331 and 332 can be formed. The purge supply passage 333 may also be formed to communicate with the first and second opening and closing portions 315 and 325 through a portion where the first and second housings 311 and 321 are coupled.

However, the present invention is not limited to the drawings, and the shapes and positions of the purge supply passages 331, 332, and 333 may be substantially varied.

In the embodiment described above, one supply part 310 for supplying the source gas S and a gas supply device 13 composed of one supply part 320 for the reaction gas R have been described as an example. 3, it is also possible to provide the source gas S and the reactive gas R through two or more supply units 310, 320, 410, and 420, respectively, unlike the above embodiments It is possible. In this case, it is possible to provide a plurality of source gases S and a plurality of reaction gases R by providing a plurality of gas supply apparatuses identical to those of the gas supply apparatus 13 described above.

Here, each gas supply device 13 can control supply of each of the source gas S and the reaction gas R by controlling the rotation angle of the cylinder of the opening and closing part. For example, as shown in FIG. 2, when a set of gas supply devices 13 is provided, the cylinder is rotated at intervals of 90 degrees, and two sets of gas supply devices 13 ), The cylinder is rotated at intervals of 45 degrees, and in the case of three sets, the angle is controlled at an angle of 30 degrees.

The same reaction gas R as the opening and closing part of the supply part for supplying the same source gas S can be provided in the case of providing the same source gas S and the reactive gas R, Can be controlled to rotate at the same angle.

On the other hand, on one side of the process chamber 11, an exhaust unit 15 for exhausting the exhaust gas is provided inside the process chamber 11. The exhaust unit 15 can also selectively exhaust and shut off the exhaust gas in the process chamber 11 as the cylindrical exhaust opening / closing unit 155 rotates, like the gas supply unit 13.

The exhaust unit 15 includes an exhaust housing 151 in which an exhaust buffer 154 communicating with the process chamber 11 is formed, And a cylindrical exhaust opening / closing portion 155 formed with a plurality of exhaust flow paths 156 selectively communicating with the exhaust buffer portion 155 as it rotates. An exhaust inlet 152 for communicating the exhaust buffer 154 and the process chamber 11 is formed at one side of the exhaust housing 151.

The exhaust opening / closing portion 155 is formed with a plurality of exhaust flow paths 156 so as to pass through the side surface of the cylinder parallel to the diameter of the circular section. In addition, the exhaust opening / closing portion 155 may be formed so that the plurality of exhaust flow paths 156 cross each other at an angle of 90 degrees.

Although one exhaust unit 15 is illustrated in the drawing, the present invention is not limited to the drawings, and a plurality of exhaust units 15 may be provided. When a plurality of exhaust portions 15 are provided, the exhaust flow path 156 of each exhaust portion 15 is formed to rotate at the same angle so as to communicate with the process chamber 11 and the exhaust buffer portion 154 at the same angle .

According to these embodiments, referring to FIG. 5, by using the gas supply device 13, it is possible to uniformly supply the deposition gas at the high pressure in the atomic layer deposition apparatus 10.

Also, according to the embodiments, the deposition gas can be uniformly provided to the large-area atomic layer deposition apparatus 10, and the deposition gas can be constantly supplied at a high pressure. In addition, even if the size of the process chamber 11 is increased, the deposition gas can be uniformly provided. In addition, by keeping the pressure of the deposition gas constant during the process, the processing time and quality can be improved. In addition, since the deposition gas is provided through the rotating cylindrical opening and closing part, the valve and the controller for controlling the flow rate can be omitted, so that the structure of the atomic layer deposition apparatus 10 can be simplified, Can be simplified.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

10: atomic layer deposition apparatus
11: Process chamber
13: Gas supply device
310:
320:
311, 321: housing
312, 322: inlet
312, and 323:
314, 324:
315, 325:
316, 326:
330: purge gas supply unit
331, 332: purge inlet
15:
151: Exhaust housing
152: exhaust inlet
154:
155: Exhaust opening /
156:

Claims

A first housing in which a first buffer portion communicating with the process chamber is formed, the first housing providing a first deposition gas;
A first opening / closing unit of a cylindrical shape rotatably provided in the first buffer unit and having a first supply passage for selectively communicating with the first buffer unit as it rotates around a rotational axis at a center of the end face;
A second housing which is provided in parallel with the first housing and in which a second buffer portion communicating with the process chamber is formed, the second housing providing a second deposition gas; And
A cylindrical second opening and closing part rotatably provided in the second buffer part and having a second supply path communicating selectively with the second buffer part as it rotates around a rotation axis at the center of the end surface;
Lt; / RTI >
Wherein the first opening and closing part and the second opening and closing part are configured such that the angle of the first supply passage communicating with the first opening and closing part and the angle of the second supply passage communicating with the second opening and closing part are different by 90 [ Device.

The method according to claim 1,
Wherein the first and second housings are provided with a purge gas supply for supplying purge gas into the process chamber through the interior of the first and second housings.

3. The method of claim 2,
Wherein the purge gas supply unit is formed to provide a purge gas into the process chamber through the first and second openings, and continuously provides the purge gas.

The method of claim 3,
Wherein the purge gas supply unit is provided at one side of the first housing and the second housing, respectively.

The method of claim 3,
Wherein the purge gas supply portion is formed at a portion where the first and second housings are coupled to provide the purge gas to the first and second opening and closing portions.

6. The method of claim 5,
The purge gas supply unit includes:
A first purge supply passage communicating with the first opening / closing portion in the first housing;
A second purge supply passage communicating with the second opening / closing portion in the second housing; And
A third purge supply passage communicating with the first opening and closing part and the second opening and closing part through an engagement part of the first housing and the second housing;
.

The method according to claim 1,
Wherein the first opening and closing part is formed with a plurality of first supply passages parallel to the cross-sectional diameter of the cylinder and through the side face of the cylinder,
Wherein the second opening and closing portion is parallel to the cross-sectional diameter of the cylinder and has a plurality of second supply passages formed to penetrate the side face of the cylinder.

The method according to claim 1,
Wherein the first opening and closing part and the second opening and closing part are rotated at the same angular velocity.

A process chamber in which a substrate is received and a deposition process is performed; And
A gas supply device provided at one side of the process chamber to supply a deposition gas into the process chamber;
Lt; / RTI >
The gas supply device includes:
A first housing in which a first buffer portion communicating with the process chamber is formed, the first housing providing a first deposition gas;
A first opening / closing unit of a cylindrical shape rotatably provided in the first buffer unit and having a first supply passage for selectively communicating with the first buffer unit as it rotates around a rotational axis at a center of the end face;
A second housing which is provided in parallel with the first housing and in which a second buffer portion communicating with the process chamber is formed, the second housing providing a second deposition gas; And
A cylindrical second opening and closing part rotatably provided in the second buffer part and having a second supply path communicating selectively with the second buffer part as it rotates around a rotation axis at the center of the end surface;
Lt; / RTI >
Wherein the first opening and closing part and the second opening and closing part have a large area rotated by 90 ° difference between an angle at which the first supply passage is in communication with the first opening and closing part and an angle at which the second supply passage is in communication with the second opening and closing part Atomic layer deposition apparatus.

10. The method of claim 9,
An exhaust unit for exhausting exhaust gas from the process chamber is provided at one side of the process chamber,
The exhaust unit includes:
An exhaust housing inside which an exhaust buffer portion communicating with the process chamber is formed; And
A cylindrical exhaust opening / closing unit rotatably provided in the exhaust housing and having a plurality of exhaust holes selectively communicating with the exhaust buffer unit as it rotates;
And a second electrode.

11. The method of claim 10,
Wherein the exhaust opening / closing portion includes a plurality of exhaust holes formed through the side surface of the cylinder so as to be parallel to the cross-sectional diameter of the cylinder, and the plurality of exhaust holes are formed to cross each other by 90 degrees.

11. The method of claim 10,
A plurality of exhaust units are provided,
Wherein the plurality of exhaust portions are controlled so that the exhaust holes are communicated with the exhaust buffer portion at the same angle of each exhaust opening / closing portion.

10. The method of claim 9,
A plurality of gas supply devices are provided,
Wherein the rotation angle of the cylinder of each gas supply device is controlled so as to rotate at a constant angular interval.

10. The method of claim 9,
Wherein the first and second housings are provided with a purge gas supply for supplying purge gas into the process chamber through the interior of the first and second housings.

15. The method of claim 14,
Wherein the purge gas supply unit is configured to provide a purge gas into the process chamber through the first and second openings, and continuously provides the purge gas.

16. The method of claim 15,
Wherein the purge gas supply unit is provided at one side of the first housing and the second housing, respectively.

15. The method of claim 14,
Wherein the purge gas supply unit is formed at a portion where the first and second housings are coupled to provide the purge gas to the first and second opening and closing units.

18. The method of claim 17,
The purge gas supply unit includes:
A first purge supply passage communicating with the first opening / closing portion in the first housing;
A second purge supply passage communicating with the second opening / closing portion in the second housing; And
A third purge supply passage communicating with the first opening and closing part and the second opening and closing part through an engagement part of the first housing and the second housing;
And a second electrode.

10. The method of claim 9,
Wherein the first opening and closing part is formed with a plurality of first supply passages parallel to the cross-sectional diameter of the cylinder and through the side face of the cylinder,
Wherein the second opening and closing part is parallel to the cross-sectional diameter of the cylinder and a plurality of second supply passages are formed so as to pass through the side face of the cylinder.

10. The method of claim 9,
Wherein the first opening and closing part and the second opening and closing part are rotated at the same angular velocity.