KR101610789B1 - Superconducting multilayer thin film and method of manufacturing the same - Google Patents

Superconducting multilayer thin film and method of manufacturing the same Download PDF

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KR101610789B1
KR101610789B1 KR1020140162507A KR20140162507A KR101610789B1 KR 101610789 B1 KR101610789 B1 KR 101610789B1 KR 1020140162507 A KR1020140162507 A KR 1020140162507A KR 20140162507 A KR20140162507 A KR 20140162507A KR 101610789 B1 KR101610789 B1 KR 101610789B1
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superconducting
superconducting layer
magnetic flux
drum
forming
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김호섭
하동우
민창훈
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한국전기연구원
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    • H—ELECTRICITY
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    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

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Abstract

The present invention relates to a superconducting multilayer thin film and a method for manufacturing the same. The superconducting multilayer thin film includes a superconducting layer that is deposited on a surface of a metallic substrate-buffer layer which is wound around a rotating drum in a heated state. The superconducting layer includes: a step of forming a first superconducting layer including a first magnetic flux fixing point by deposition of a magnetic flux fixing material and a superconducting material on the drum; and a step of forming a second superconducting layer including a second magnetic flux fixing point by deposition of a magnetic flux fixing material and a superconducting material on the drum based on an increase in temperature and rotation speed of the drum. Accordingly, a superconducting layer including a zero stage magnetic flux pinning center and a superconducting layer including a primary magnetic flux pinning center are laminated so that an impact of an incident angle of a magnetic field is minimized and a decrease in threshold current of the superconducting layer for magnetic field incidence is minimized.

Description

초전도 다층박막 및 그 제조방법 {Superconducting multilayer thin film and method of manufacturing the same}[0001] The present invention relates to a superconducting multilayer thin film and a manufacturing method thereof,

본 발명은 초전도 다층박막 및 그 제조방법에 관한 것으로, 더욱 상세하게는, 0차자속고정점을 포함하는 초전도층과 1차자속고정점을 포함하는 초전도층을 적층시켜 자기장에 의한 초전도층의 임계전류 감소를 최소화한 초전도 다층박막 및 그 제조방법에 관한 것이다.The present invention relates to a superconducting multilayer thin film and a method of manufacturing the same, and more particularly, to a superconducting multilayer thin film which includes a superconducting layer including a zero- Layer superconducting thin film and a method of manufacturing the same.

일반적으로 고온 초전도막은 산화물이나 금속기판 위에 초전도층을 입힌 형태로 개발되고 있다. 금속기판 위에 한 층 이상의 산화물막을 입히고 그 위에 초전도층을 증착하여 만드는 초전도 선재를 제조한다. 초전도선재는 금속기판, 산화물 완충층, 초전도층 및 안정화층으로 이루어져 있다. 이와 같은 초전도선재는 임계 온도 이하에서 저항이 0인 상태로 많은 전류를 통전할 수 있어 저손실로 고밀도의 전류 공급이나 송전을 필요로 하는 산업분야에 많이 이용될 것으로 기대되고 있다. Generally, a high-temperature superconducting film is developed in the form of a superconducting layer on an oxide or a metal substrate. A superconducting wire is fabricated by coating one or more oxide films on a metal substrate and depositing a superconducting layer thereon. The superconducting wire consists of a metal substrate, an oxide buffer layer, a superconducting layer and a stabilizing layer. Such a superconducting wire is expected to be widely used in industrial fields requiring a high-density current supply or transmission with a low loss because a large amount of current can be conducted in a state where the resistance is zero at a critical temperature or less.

초전도선재가 실제 산업분야에 이용되기 위해서는 높은 자기장 하에서도 큰 임계전류(Critical current) 값을 가지고 있어야 한다. 여기서 임계전류는 초전도층에 흘릴 수 있는 최대의 전류를 의미하기 때문에 초전도층의 가장 중요한 조건 중 하나는 높은 임계전류 밀도가 된다. 특히 임의의 방향으로 가해지는 큰 자기장 하에서도 임계전류 밀도는 가능한 커야한다. In order to use superconducting wires in practical industrial fields, it is necessary to have a large critical current value even under a high magnetic field. Here, since the critical current means the maximum current that can flow into the superconducting layer, one of the most important conditions of the superconducting layer is the high critical current density. Especially under a large magnetic field applied in an arbitrary direction, the critical current density should be as large as possible.

초전도층 내부에 침투해 들어온 자기장은 전류의 흐름에 따라 로렌츠의 힘(Lorentz's force)에 의해 움직이게 되고 이를 통해 전기장이 유도되어 자기장의 각도에 따라 임계전류의 감소가 발생하기 때문에, 종래에는 전기적 손실을 줄이기 위해 초전도층의 내부에 자속고정점(Pining center)을 도입하였다. 자속고정점은 초전도층에 나노 크기의 비초전도성 입자를 도핑하는 것으로, 초전도층에 자속고정점을 도입하면 자속고정점이 자기장을 움직이지 못하게 포획함으로써 전기적 손실을 줄일 수 있으며, 자기장 하의 임계전류의 감소를 줄일 수 있다.The magnetic field penetrating into the superconducting layer is moved by the Lorentz's force according to the current flow, and the electric field is induced thereby to cause the decrease of the critical current according to the angle of the magnetic field. A flux center was introduced into the superconducting layer to reduce the magnetic flux density. Magnetic flux anchor points dope the superconducting layer with nano-sized non-superconducting particles. When magnetic flux anchor points are introduced into the superconducting layer, the magnetic flux trap can capture the magnetic field unobstructed to reduce electrical losses. .

이와 같이 초전도층에 자속고정점을 도핑하는 방법으로는 종래기술 '대한민국특허청 등록특허 제10-0772014호 보조 클러스트빔 분사에 의한 고온 초전도막 제조방법, 제조장치, 이 방법에 의해 제조되는 고온 초전도막'과 같이 점 형상의 0차원 자속고정점을 도핑하거나, '대한민국특허청 공개특허 제10-2010-0102271호 자속고정점이 형성된 초전도 선재 및 이의 제조방법'과 같이 기둥 형상의 1차원 자속고정점을 도핑하는 기술이 알려져 있다.As a method of doping the magnetic flux fixing point in the superconducting layer as described above, there is a method of manufacturing a high-temperature superconducting film by the assistant-cluster beam injection of the prior art 'Korean Patent Registration No. 10-0772014, ', Or a method of manufacturing a superconducting wire having a magnetic flux fixing point formed therein, and a method of manufacturing the superconducting wire using a method of doping a columnar one-dimensional magnetic flux fixing point Is known.

하지만 이러한 자속고정점을 초전도층에 적용할 경우, 점 형상의 0차원 자속고정점을 사용하면 자속고정점이 없는 초전도층 보다는 자기장에 의한 임계전류의 감소 폭이 줄어들지만 기존의 최대 임계전류 값으로부터 만족할 정도의 임계전류 값을 얻을 수 없을 뿐만 아니라 자기장의 입사각에 따라 임계전류값이 상이하다는 단점이 있다. 또한 기둥형상의 1차원 자속고정점을 사용할 경우 자기장의 입사각도에 따라 임계전류 값이 일정하지 못한다는 문제점이 있다.However, when such a flux-fixing point is applied to a superconducting layer, the use of a point-shaped zero-dimensional flux-fixing point reduces the width of the critical current due to the magnetic field rather than the superconducting layer having no flux-fixing point. The threshold current value is not obtained and the threshold current value is different according to the incident angle of the magnetic field. Also, when a columnar one-dimensional flux fixing point is used, there is a problem that the critical current value is not constant depending on the incident angle of the magnetic field.

대한민국특허청 등록특허 제10-0772014호Korea Patent Office Registration No. 10-0772014 대한민국특허청 공개특허 제10-2010-0102271호Korean Patent Publication No. 10-2010-0102271

따라서 본 발명의 목적은, 0차자속고정점을 포함하는 초전도층과 1차자속고정점을 포함하는 초전도층을 적층시켜 자기장의 입사각에 의한 영향을 최소화하며, 자기장의 입사에 따라 초전도층의 임계전류 감소를 최소화시킨 초전도 다층박막 및 그 제조방법에 관한 것이다.SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a superconducting layer including a superconducting layer including a zero-thrust superconducting point and a superconducting layer including a superconducting primary superconducting point to minimize the influence of the incident angle of the magnetic field, Layer superconducting thin film and a method of manufacturing the same.

상기한 목적은, 가열상태의 회전하는 드럼에 권선된 금속기판-완충층의 표면에 증착되는 초전도층을 포함하는 초전도 다층박막 제조방법에 있어서, 상기 초전도층은, 상기 드럼에 자속고정물질 및 초전도물질을 증착하여 제1자속고정점을 포함하는 제1초전도층을 형성하는 단계와; 상기 드럼의 온도 및 회전속도를 증가시켜 상기 드럼에 자속고정물질 및 초전도물질을 증착하여 제2자속고정점을 포함하는 제2초전도층을 형성하는 단계를 포함하는 것을 특징으로 하는 초전도 다층박막 제조방법에 의해 달성된다.The above object is achieved by a superconducting multilayer thin film manufacturing method comprising a superconducting layer deposited on a surface of a metal substrate-buffer layer wound on a rotating drum in a heated state, wherein the superconducting layer comprises a flux- To form a first superconducting layer including a first magnetic flux anchoring point; And forming a second superconducting layer including a second magnetic flux fixing point by depositing a magnetic flux fixing material and a superconducting material on the drum by increasing a temperature and a rotation speed of the drum Lt; / RTI >

여기서, 상기 제1초전도층을 형성하는 단계 및 상기 제2초전도층을 형성하는 단계는, 듀얼챔버를 이용한 동시증발법(Evaporation using drum in dual chamber, EDDC)을 사용하는 자속고정점 형성장치를 통해 형성되며, 상기 제1자속고정점은 점 형상의 0차원자속고정점(Point pinning center)이고, 상기 제2자속고정점은 기둥 형상의 1차원자속고정점(Columnar pinning center)인 것이 바람직하다.Here, the step of forming the first superconducting layer and the step of forming the second superconducting layer may be performed by using a magnetic flux fixing point forming apparatus using an evaporation using drum in dual chamber (EDDC) The first magnetic flux anchor point is a point-shaped zero-dimensional flux pinning center, and the second magnetic flux anchor point is a columnar one-dimensional flux pinning center.

상기 제1초전도층을 형성하는 단계에서 상기 드럼은 500 내지 750℃로 가열되며, 상기 제2초전도층을 형성하는 단계에서 상기 드럼은 800 내지 900℃로 승온되는 것이 바람직하며, 상기 제1초전도층을 형성하는 단계에서 상기 드럼은 10 내지 90RPM으로 회전하며, 상기 제2초전도층을 형성하는 단계에서 상기 드럼은 100 내지 200RPM으로 회전하는 것이 바람직하다.In the step of forming the first superconducting layer, the drum is heated to 500 to 750 ° C. In the step of forming the second superconducting layer, the drum is preferably heated to 800 to 900 ° C., The drum rotates at 10 to 90 RPM, and in the step of forming the second superconducting layer, the drum rotates at 100 to 200 RPM.

상기한 목적은 또한, 금속기판-완충층-초전도층을 포함하는 초전도 다층박막에 있어서, 상기 초전도층은, 점 형상의 0차원자속고정점(Point pinning center)을 가지는 제1초전도층과; 기둥 형상의 1차원자속고정점(Columnar pinning center)을 가지는 제1초전도층을 포함하는 것을 특징으로 하는 초전도 다층박막에 의해서도 달성된다.The above object is also achieved by a superconducting multilayer film comprising a metal substrate, a buffer layer and a superconducting layer, wherein the superconducting layer comprises: a first superconducting layer having a point-shaped zero-point pinning center; And a first superconducting layer having a columnar pinning center and a one-dimensional columnar pinning center.

상술한 본 발명의 구성에 따르면 0차자속고정점을 포함하는 초전도층과 1차자속고정점을 포함하는 초전도층을 적층시켜 자기장의 입사각에 의한 영향을 최소화하며, 자기장의 입사에 따라 초전도층의 임계전류 감소를 최소화할 수 있는 효과를 제공한다.According to the above-described structure of the present invention, the superconducting layer including the zero-thrust subhedral and the vertex and the superconducting layer including the primary superconducting point are laminated to minimize the influence of the incident angle of the magnetic field. Reduction effect can be minimized.

도 1은 본 발명의 실시예에 따른 자속고정점 형성장치의 단면도이고,
도 2는 본 발명의 실시예에 따른 초전도 다층박막 제조방법의 순서도이고,
도 3은 제1초전도층 및 제2초전도층이 적층된 초전도층의 단면도이고,
도 4는 자속고정점이 상이한 초전도층에 자기장 입사각에 따른 임계전류를 나타낸 그래프이고,
도 5는 초전도층에 입사되는 자기장의 입사각을 나타낸 단면도이다.1 is a cross-sectional view of a magnetic flux anchor forming apparatus according to an embodiment of the present invention,
2 is a flowchart of a method for manufacturing a superconducting multilayer thin film according to an embodiment of the present invention,
3 is a cross-sectional view of a superconducting layer in which a first superconducting layer and a second superconducting layer are laminated,
4 is a graph showing a critical current according to a magnetic field incident angle in a superconducting layer having different flux fixing points,
5 is a cross-sectional view showing an incident angle of a magnetic field incident on the superconducting layer.

이하 본 발명에 따른 초전도 다층박막 및 그 제조방법를 도면을 참조하여 상세히 설명한다.BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a superconducting multilayer thin film and a manufacturing method thereof according to the present invention will be described in detail with reference to the drawings.

초전도 다층박막은 도 1에 도시된 바와 같이 듀얼챔버를 이용한 동시증발법(Evaporation using drum in dual chamber, EDDC)을 사용하는 자속고정점 형성장치(100)를 통해 제조된다. 자속고정점 형성장치(100)는 증착챔버(110), 초전도물질공급부(120), 반응챔버(130), 자속고정물질공급부(140) 및 셔터(150)로 이루어진다. 여기서 증착챔버(110) 및 반응챔버(130)는 10-4 내지 10-6 Torr의 진공도를 갖는 것이 바람직하며, 경우에 따라서 증착챔버(110)와 반응챔버(130)는 상이한 진공도를 가지도록 조절할 수 있다.As shown in FIG. 1, the superconducting multilayer thin film is manufactured through a magnetic flux fixing point forming apparatus 100 using an evaporation using drum in dual chamber (EDDC) using a dual chamber. The flux fixing point forming apparatus 100 includes a deposition chamber 110, a superconducting material supply unit 120, a reaction chamber 130, a flux fixing material supply unit 140, and a shutter 150. It is preferable that the deposition chamber 110 and the reaction chamber 130 have a degree of vacuum of 10 -4 to 10 -6 Torr and the deposition chamber 110 and the reaction chamber 130 may be adjusted to have different degrees of vacuum .

금속기판-완충층-초전도층을 포함하는 초전도 다층박막은 초전도층을 형성하기 위해 금속기판-완충층으로 이루어진 선재(10)가 드럼(160)에 권선되어 있다. 드럼(160)은 반응챔버(130) 내에 위치하며, 일부가 증착챔버(110)에 노출되어 있다. 초전도층을 균일하게 증착시키기 위해 일정한 속도로 회전한다.In a superconducting multilayer thin film including a metal substrate-buffer layer-superconducting layer, a wire 10 made of a metal substrate-buffer layer is wound on the drum 160 to form a superconducting layer. The drum 160 is located in the reaction chamber 130, and a part of the drum 160 is exposed to the deposition chamber 110. It rotates at a constant speed to uniformly deposit the superconducting layer.

여기서 드럼(160)은 초전도층 증착이 가능하도록 가열상태를 유지하게 되는 데, 가열상태 유지는 드럼(160)의 외주면을 따라 형성된 복수의 히터(170)에 의해 가능하다. 또한 초전도층 증착을 위해서는 산소가 필요하기 때문에 반응챔버(130) 내로 산소를 공급하며, 이때 반응챔버(130)의 진공도가 1×10-3 내지 3×10-2 Torr가 되도록 산소(O2)를 공급한다.Here, the drum 160 is maintained in a heated state to enable superconducting layer deposition. The heating state can be maintained by a plurality of heaters 170 formed along the outer circumferential surface of the drum 160. Oxygen is supplied to the reaction chamber 130 because oxygen is required for deposition of the superconducting layer, and oxygen (O 2 ) is supplied to the reaction chamber 130 so that the degree of vacuum of the reaction chamber 130 is 1 × 10 -3 to 3 × 10 -2 Torr. .

반응챔버(130)와 달리 증착챔버(110)의 진공도는 10-4 내지 10-6 Torr를 유지하도록 한다. 증착챔버(110)는 자속고정물질공급부(140)로부터 지속적으로 공급되는 아르곤(Ar)이 증착챔버(110) 내로 흘러들어가 진공도를 유지할 수 있다. 증착챔버(110) 내의 진공도 유지는 초전도물질공급부(120)에서 증발하는 초전도물질의 비율을 일정하게 유지하여 초전도층의 조성비를 변화시키지 않는 데 필수적이다. 이와 같은 반응챔버(110) 및 증착챔버(130)는 셔터(150)에 의해 공간이 분리될 수 있다.Unlike the reaction chamber 130, the vacuum degree of the deposition chamber 110 is maintained at 10 -4 to 10 -6 Torr. The deposition chamber 110 can maintain the degree of vacuum by flowing argon Ar continuously supplied from the flux fixing material supply unit 140 into the deposition chamber 110. Maintaining the degree of vacuum in the deposition chamber 110 is essential to keep the ratio of the superconducting material evaporated in the superconducting material supply part 120 constant to keep the composition ratio of the superconducting layer unchanged. The reaction chamber 110 and the deposition chamber 130 can be separated from each other by the shutter 150.

이러한 자속고정점 형성장치(100)를 이용하여 초전도층을 형성하는 방법은 다음과 같은 단계로 이루어진다.
A method of forming a superconducting layer using the magnetic flux anchor forming apparatus 100 is as follows.

도 2에 도시된 바와 같이 먼저, 드럼에 자속고정물질 및 초전도물질을 증착하여 제1초전도층을 형성한다(S1).As shown in FIG. 2, first, a magnetic flux fixing material and a superconducting material are deposited on a drum to form a first superconducting layer (S1).

드럼(160)에는 금속기판-완충층으로 이루어진 선재(10)가 권선되어 있으며, 이러한 드럼(160)은 500 내지 750℃로 가열된 상태에서 회전한다. 이때 드럼(160)의 회전속도는 10 내지 90RPM으로 회전하여 도 3과 같이 제1자속고정점(211)이 점 형상으로 증착되는 제1초전도층(210)을 형성한다. 드럼(160)의 회전속도는 초전도층(200) 증착 두께가 일정하기 위해 일정한 속도로 회전하는 것이 바람직하다.The drum 160 is wound with a wire 10 made of a metal substrate-buffer layer. The drum 160 rotates while heated to 500 to 750 ° C. At this time, the rotation speed of the drum 160 is rotated at 10 to 90 RPM to form the first superconducting layer 210 in which the first magnetic flux fixing points 211 are deposited in a point shape as shown in FIG. It is preferable that the rotation speed of the drum 160 is rotated at a constant speed so that the deposition thickness of the superconducting layer 200 is constant.

회전하는 드럼(160) 방향으로 초전도물질공급부(120)로부터 초전도물질(212)이, 자속고정물질공급부(140)로부터 자속고정물질이 각각 배출되어 증착된다. 이때 초전도물질(212)은 증착챔버(110)로부터 증발(Evaporation)에 의해 증착되며, 자속고정물질은 스퍼터링(Sputtering)에 의해 증착된다. 드럼(160) 회전에 의해 초전도물질(212)이 선재(10)에 증착되면 여기에 자속고정물질이 초전도물질(212)에 박히는 방식으로 형성된다. 자속고정물질은 아르곤과 함께 분사되면서 플라즈마(Plazma)를 형성하게 되며, 이를 통해 선재(10)에 증착된다. 스퍼터링은 DC 스퍼터링(Direct current sputtering), 펄스드 DC 스퍼터링(Pulsed direct current sputtering), RF 스퍼터링(Radio frequency sputtering) 중 어느 하나로 스퍼터링하는 것이 바람직하다.The superconducting material 212 from the superconducting material supply unit 120 and the flux fixing material from the flux fixing material supply unit 140 are discharged and deposited in the direction of the rotating drum 160 respectively. At this time, the superconducting material 212 is evaporated from the deposition chamber 110 by evaporation, and the magnetic flux fixing material is deposited by sputtering. When the superconducting material 212 is deposited on the wire 10 by the rotation of the drum 160, a magnetic flux fixing material is formed on the superconducting material 212. The magnetic flux fixing material is sprayed together with argon to form a plasma, through which it is deposited on the wire rod 10. The sputtering is preferably performed by any one of direct current sputtering, pulsed direct current sputtering, and RF sputtering.

제1초전도층(210)은 초전도물질(212) 100원자수에 대하여 제1자속고정점(211)이 1 내지 20원자수가 포함되도록 균일하게 증착되어야 한다. 만약 제1자속고정점(211)이 1원자수 미만일 경우 제1자속고정점(211)의 제 역할을 수행할 수 없으며, 20원자수를 초과할 경우 초전도물질(212)에 비해 제1자속고정점(211)의 양이 많아 초전도 효과를 내는 데 제약이 따르게 된다.The first superconducting layer 210 must be uniformly deposited with respect to the number of atoms of the superconducting material 212 so that the first magnetic flux fixing point 211 includes 1 to 20 atomic numbers. If the first magnetic flux anchor point 211 is less than one atomic radius, it can not perform the role of the first magnetic flux anchor point 211, The amount of the point 211 is large, so that the superconducting effect is restricted.

또한, 제1초전도층(210)은 0.01 내지 1㎛ 내에서 원하는 두께가 증착되면 증착공정을 중단한다. 제1초전도층(210)의 두께가 0.01㎛ 미만일 경우 두께가 너무 얇아 자속고정점 형상이 제대로 이루어지기가 힘들며, 두께가 1㎛를 초과할 경우 초전도 다층박막의 수가 적어서 자속고정점 효과가 떨어질 수 있다.In addition, the first superconducting layer 210 stops the deposition process when a desired thickness is deposited within 0.01 to 1 占 퐉. When the thickness of the first superconducting layer 210 is less than 0.01 탆, the thickness of the first superconducting layer 210 is too thin, which makes it difficult to form the shape of the magnetic flux fixing point. If the thickness exceeds 1 탆, the number of the superconducting multilayer thin films is small, have.

이와 같이 고온에서 고속으로 드럼(160)을 회전시키게 되면 제1자속고정점(211)은 점 형상의 0차원자속고정점(Point pinning center)이 형성된다. 0차원자속고정점은 선이나 면 형상이 아닌 점형상으로 이러한 자속고정점이 초전도층(200)에 포함되면 도 4에 도시된 바와 같은 임계전류 값을 나타내게 된다. 여기서 임계전류는 도 5와 같이 초전도층과 평행한 각도를 0°로 했을 때 이에 따른 입사각(θ)을 나타낸 것이다. 초전도층에 자속고정점이 없을 때(L1)는 자기장 입사각(θ)이 0°에 가까울 때 임계전류가 최대치에 가깝지만 자기장의 입사각(θ)이 증가할수록 임계전류 값이 큰 폭으로 감소하게 된다. 이에 비해 자속고정점이 없는 초전도층보다는 제1자속고정점(211)이 포함될 때(L2) 임계전류의 감소 값이 줄어들게 된다. 제1자속고정점(211)에 의한 임계전류는 자기장의 입사각(θ)이 낮을수록 최대치로부터 적게 감소하고, 입사각(θ)이 증가할수록 점점 감소 값이 큰 것을 확인할 수 있다.
When the drum 160 is rotated at high temperature and high speed in this way, the first magnetic flux fixing point 211 is formed with a point-shaped zero-dimensional flux pinning center. The zero-dimensional flux fixing point has a point shape other than a line or a plane shape. When such a flux fixing point is included in the superconducting layer 200, the zero-dimensional flux fixing point shows a critical current value as shown in FIG. Here, the critical current represents an incident angle (&thetas;) when an angle parallel to the superconducting layer is 0 DEG as shown in FIG. When there is no magnetic flux fixing point in the superconducting layer, the critical current is close to the maximum value when the incident angle of the magnetic field is close to 0, but the critical current value is greatly decreased as the incident angle of the magnetic field increases. On the other hand, when the first magnetic flux fixing point 211 is included in the superconducting layer without the magnetic flux fixing point (L2), the decrease in the threshold current is reduced. It can be seen that the threshold current by the first magnetic flux fixing point 211 decreases from the maximum value as the incidence angle of the magnetic field becomes lower and decreases gradually as the incidence angle increases.

드럼(160)의 온도 및 회전속도를 증가시켜 제2초전도층(220)을 형성한다(S2).The temperature and the rotational speed of the drum 160 are increased to form the second superconducting layer 220 (S2).

S1 단계에서 형성된 제1초전도층(210)에 제1자속고정점(211)및 초전도물질(212)을 증착하여 제2초전도층(220)을 형성한다. 이때 S1 단계보다 드럼(160)의 온도를 높이기 위해 드럼(160)을 승온시키고, 회전속도도 증가시켜 0차원자속고정점이 아닌 기둥 형상의 1차원자속고정점인 제2자속고정점(221)을 형성하도록 한다.A first magnetic flux fixing point 211 and a superconducting material 212 are deposited on the first superconducting layer 210 formed in step S1 to form a second superconducting layer 220. [ At this time, the drum 160 is heated to raise the temperature of the drum 160 and the rotational speed is increased to increase the temperature of the drum 160, so that the second magnetic flux fixing point 221, which is a columnar one- Respectively.

드럼(160)의 온도를 높이게 되면 드럼(160)에 증착되는 자속고정물질이 온도가 낮을 때보다 움직임이 활발해지기 때문에 자속고정점이 모여있는 곳으로 쉽게 이동하여 기둥형상으로 뭉치게 된다. 자속고정점은 서로 뭉치려는 성질이 있기 때문에 움직임이 활발해지면 서로 뭉쳐 기둥형상으로 형성된다. 또한 여기에 드럼(160)의 회전속도를 증가시키게 되면 초전도층의 두께가 얇아지므로 확산에 의하여 자속고정물질이 기둥형상으로 이어지게 된다. 이를 통해 1차원자속고정점(Columnar pinning center)인 제2자속고정점(221)을 포함하는 제2초전도층(220)이 형성된다.When the temperature of the drum 160 is increased, the magnetic flux fixing material deposited on the drum 160 moves more easily than when the temperature is lower. Therefore, the magnetic flux fixing material easily moves to the place where the magnetic flux fixing points are gathered and is piled up into a columnar shape. Since the magnetic flux fixing points have a property of aggregating with each other, when the motion becomes active, they are formed into a columnar shape. Further, when the rotational speed of the drum 160 is increased, the thickness of the superconducting layer becomes thinner, so that the magnetic flux fixing material is connected to the columnar shape by diffusion. A second superconducting layer 220 including a second magnetic flux fixing point 221, which is a one-dimensional pinning center, is formed.

여기서 드럼(160)의 온도는 S1 단계보다 높은 온도인 800 내지 900℃가 바람직하며, 이와 같은 온도 내에서는 제2자속고정점(221)이 1차원자속고정점으로 형성된다. 또한 드럼(160)의 회전속도를 100 내지 200RPM으로 S1 단계보다 줄여 보다 제1자속고정점(221)이 용이하게 형성되도록 한다.Here, the temperature of the drum 160 is preferably 800 to 900 DEG C higher than the step S1, and the second magnetic flux anchor point 221 is formed as a one-dimensional flux anchor point within the temperature range. Also, the rotation speed of the drum 160 is reduced to 100 to 200 RPM from the step S1 so that the first magnetic flux fixing point 221 can be easily formed.

제2초전도층(220)은 제1초전도층(210)과 마찬가지로 초전도물질(222) 100원자수에 대하여 제2자속고정점(221)이 1 내지 20원자수가 포함되도록 균일하게 증착되어야 한다. 만약 제2자속고정점(221)이 1원자수 미만일 경우 제2자속고정점(221)의 제 역할을 수행할 수 없으며, 20원자수를 초과할 경우 초전도물질(222)에 비해 제2자속고정점(221)의 양이 많아 초전도 효과를 내는 데 제약이 따르게 된다.The second superconducting layer 220 must be uniformly deposited such that the second magnetic flux fixing point 221 includes 1 to 20 atomic atoms per 100 atomic masses of the superconducting material 222 as in the case of the first superconducting layer 210. If the second magnetic flux anchor point 221 is less than one atomic number, it can not perform the role of the second magnetic flux anchor point 221. If the number of atoms exceeds 20 atomic anchor points, The amount of the point 221 is large, so that the superconducting effect is restricted.

또한, 제2초전도층(220)은 0.01 내지 1㎛ 내에서 원하는 두께가 증착되면 증착공정을 중단한다. 제2초전도층(220)의 두께가 0.01㎛ 미만일 경우 두께가 너무 얇아 자속고정점 형상이 제대로 이루어지기가 힘들며, 두께가 1㎛를 초과할 경우 초전도 다층박막의 수가 적어서 자속고정점 효과가 떨어질 수 있다.In addition, the second superconducting layer 220 stops the deposition process when a desired thickness is deposited within 0.01 to 1 占 퐉. When the thickness of the second superconducting layer 220 is less than 0.01 탆, the thickness of the second superconducting layer 220 is too thin, which makes it difficult for the shape of the magnetic flux fixing point to be achieved properly. If the thickness exceeds 1 탆, have.

경우에 따라서, 제1초전도층(210) 및 제2초전도층(220)이 적층된 초전도층(200)은 각 초전도층(210, 220)이 복수 개로 이루어져, 제1초전도층(210) 및 제2초전도층(220)이 교대로 적층되는 것이 바람직하다.The superconducting layer 200 in which the first superconducting layer 210 and the second superconducting layer 220 are laminated is formed by a plurality of superconducting layers 210 and 220, 2 superconducting layers 220 are alternately stacked.

여기서 제1자속고정점(211) 및 제2자속고정점(221)을 형성하는 자속고정물질은, 바륨하프늄옥사이드하프늄(BaHfO3), 바륨진크옥사이드(BaSnO3), 지르코늄(Zr), 바륨지르코네이트(BaZrO3), 산화마그네슘(MgO) 및이의 혼합으로 이루어진 군으로부터 선택된다. 또한, 초전도물질(221, 222)은, 희토류원소-바륨-구리-산소(RE-Ba-Cu-O) 계를 사용하며, 희토류원소(RE)는 이트륨(Y), 사마륨(Sm), 가돌리늄(Gd), 카드뮴(Cd), 네오디뮴(Nd), 홀뮴(Ho) 및 이의 혼합으로 이루어진 군으로부터 선택된다.Wherein the first magnetic flux fixing material to form a magnetic flux anchor point 211 and the second magnetic flux anchor points 221, barium hafnium oxide, hafnium (BaHfO 3), barium jinkeu oxide (BaSnO 3), zirconium (Zr), barium zirconate nose carbonate (BaZrO 3), is selected from magnesium oxide (MgO) and a group consisting of a mixture of these. The superconducting materials 221 and 222 use a rare earth element-barium-copper-oxygen (RE-Ba-Cu-O) system and the rare earth element RE includes yttrium (Y), samarium (Gd), cadmium (Cd), neodymium (Nd), holmium (Ho), and mixtures thereof.

제2초전도층(220)에 포함된 1차원자속고정점은 도 4에 도시된 바와 같이 자기장 입사각도에 따라서 임계전류(L3)의 변화폭이 심하다. 즉 자기장이 45° 근처의 각도로 입사하게 되면 임계전류는 큰 폭으로 감소하여 최저값을 나타내며, 반대로 90°로 입사하게 되면 임계전류의 최대값에 가까워진다. 초전도층(200)의 경우 자기장이 어떠한 각도로 입사하더라도 영향을 받지 않고 일정한 임계전류를 가져야 한다.As shown in FIG. 4, the one-dimensional flux fixing point included in the second superconducting layer 220 has a large change width of the critical current L3 according to the incident angle of the magnetic field. That is, when the magnetic field is incident at an angle of about 45 °, the critical current decreases greatly to the lowest value. On the other hand, when the magnetic field is incident at 90 °, the critical current approaches the maximum value of the critical current. In case of the superconducting layer 200, the magnetic field should have a constant critical current without being influenced by any angle.

종래에는 임계전류의 감소 값을 최소화하기 위해 0차원자속고정점을 적용한 초전도층을 이용하여 초전도 다층박막을 제조하였다. 이에 대해 본 발명은 자속고정점이 없는 초전도층보다 임계전류 값이 높은 0차원자속고정점을 포함하는 제1초전도층(210)과, 0차원자속고정점보다 임계전류는 높지만 임계전류 값이 일정하지 못하고 자기장의 입사각에 큰 영향을 받는 1차원자속고정점을 포함하는 제2초전도층(220)을 함께 사용하여 임계전류 감소를 최소화시키며, 자기장의 입사각에 의한 영향이 최소화된 초전도층(200)을 얻을 수 있다.Conventionally, a superconducting multilayer thin film was fabricated using a superconducting layer to which a zero-dimensional flux fixed point was applied in order to minimize a decrease in critical current. In contrast, the present invention is characterized in that a first superconducting layer 210 including a zero-dimensional magnetic flux fixing point having a higher critical current value than a superconducting layer without a magnetic flux fixing point and a second superconducting layer 210 having a threshold current higher than the zero- The second superconducting layer 220 including the one-dimensional magnetic flux fixing point which is influenced greatly by the incident angle of the magnetic field is used together to minimize the decrease in the critical current and the superconducting layer 200 minimizing the influence of the incident angle of the magnetic field Can be obtained.

10: 선재 100: 자속고정점 형성장치
110: 증착챔버 120: 초전도물질공급부
130: 반응챔버 140: 자속고정물질공급부
150: 셔터 160: 드럼
170: 히터 200: 초전도층
210: 제1초전도층 211: 제1자속고정점
212, 222: 초전도물질 220: 제2초전도층
221: 제2자속고정점10: wire rod 100: magnetic flux fixing point forming device
110: deposition chamber 120: superconducting material supply unit
130: reaction chamber 140: magnetic flux fixing material supply unit
150: shutter 160: drum
170: heater 200: superconducting layer
210: first superconducting layer 211: first magnetic flux fixing point
212, 222: superconducting material 220: second superconducting layer
221: second flux fixing point

Claims (12)

가열상태의 회전하는 드럼에 권선된 금속기판-완충층의 표면에 증착되는 초전도층을 포함하는 초전도 다층박막 제조방법에 있어서,
상기 초전도층은,
상기 드럼에 자속고정물질 및 초전도물질을 증착하여 제1자속고정점을 포함하는 제1초전도층을 형성하는 단계와;
상기 드럼의 온도 및 회전속도를 증가시켜 상기 드럼에 자속고정물질 및 초전도물질을 증착하여 제2자속고정점을 포함하는 제2초전도층을 형성하는 단계를 포함하며,
상기 제1자속고정점은 점 형상의 0차원자속고정점(Point pinning center)이고, 상기 제2자속고정점은 기둥 형상의 1차원자속고정점(Columnar pinning center)인 것을 특징으로 하는 초전도 다층박막 제조방법.A method for fabricating a superconducting multilayer thin film including a superconducting layer deposited on a surface of a metal substrate-buffer layer wound on a rotating drum in a heated state,
Wherein the superconducting layer comprises:
Depositing a magnetic flux fixing material and a superconducting material on the drum to form a first superconducting layer including a first magnetic flux fixing point;
Forming a second superconducting layer including a second magnetic flux fixing point by depositing a magnetic flux fixing material and a superconducting material on the drum by increasing a temperature and a rotation speed of the drum,
Wherein the first magnetic flux anchor point is a point-shaped zero-dimensional flux pinning center and the second magnetic flux anchor point is a columnar one-dimensional flux pinning center. Gt; 제 1항에 있어서,
상기 제1초전도층을 형성하는 단계 및 상기 제2초전도층을 형성하는 단계는,
듀얼챔버를 이용한 동시증발법(Evaporation using drum in dual chamber, EDDC)을 사용하는 자속고정점 형성장치를 통해 형성되는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
Wherein forming the first superconducting layer and forming the second superconducting layer comprise:
Wherein the magnetoresistive film is formed through a flux fixing point forming apparatus using a dual chamber evaporation using drum in dual chamber (EDDC). 삭제delete 제 1항에 있어서,
상기 제1초전도층을 형성하는 단계에서 상기 드럼은 500 내지 750℃로 가열되며,
상기 제2초전도층을 형성하는 단계에서 상기 드럼은 800 내지 900℃로 승온되는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
In the step of forming the first superconducting layer, the drum is heated to 500 to 750 ° C,
Wherein the step of forming the second superconducting layer increases the temperature of the drum to 800 to 900 占 폚. 제 1항에 있어서,
상기 제1초전도층을 형성하는 단계에서 상기 드럼은 10 내지 90RPM으로 회전하며,
상기 제2초전도층을 형성하는 단계에서 상기 드럼은 100 내지 200RPM으로 회전하는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
In the step of forming the first superconducting layer, the drum rotates at 10 to 90 RPM,
Wherein the drum is rotated at 100 to 200 RPM in the step of forming the second superconducting layer. 제 1항에 있어서,
상기 제1초전도층 및 상기 제2초전도층은 각각 복수 개로 이루어지며,
복수의 상기 제1초전도층 및 상기 제2초전도층은 교대로 적층되는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
Wherein each of the first superconducting layer and the second superconducting layer comprises a plurality of layers,
Wherein the plurality of first superconducting layers and the plurality of second superconducting layers are alternately stacked. 제 1항에 있어서,
상기 제1초전도층 및 상기 제2초전도층은 각각 0.01 내지 1㎛의 두께를 갖는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
Wherein the first superconducting layer and the second superconducting layer each have a thickness of 0.01 to 1 占 퐉. 제 1항에 있어서,
상기 자속고정물질은 스퍼터링(Sputtering)에 의해 증착되며,
상기 초전도물질은 증발(Evaporation)에 의해 증착되는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
The magnetic flux fixing material is deposited by sputtering,
Wherein the superconducting material is deposited by evaporation. 제 1항에 있어서,
상기 자속고정물질은,
바륨하프늄옥사이드하프늄(BaHfO3), 바륨진크옥사이드(BaSnO3), 지르코늄(Zr), 바륨지르코네이트(BaZrO3), 산화마그네슘(MgO) 및이의 혼합으로 이루어진 군으로부터 선택된 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
The flux-
Barium hafnium oxide, hafnium (BaHfO 3), barium jinkeu oxide (BaSnO 3), zirconium (Zr), barium zirconate (BaZrO 3), magnesium oxide (MgO) and the superconducting, characterized in that it is selected from the group consisting of a mixture of the (Method for manufacturing multilayer thin film). 제 1항에 있어서,
상기 초전도물질은,
희토류원소-바륨-구리-산소(RE-Ba-Cu-O) 계를 사용하며,
상기 희토류원소(RE)는 이트륨(Y), 사마륨(Sm), 가돌리늄(Gd), 카드뮴(Cd), 네오디뮴(Nd), 홀뮴(Ho) 및 이의 혼합으로 이루어진 군으로부터 선택된 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
Wherein the superconducting material comprises
A rare-earth element-barium-copper-oxygen (RE-Ba-Cu-O)
Wherein the rare earth element RE is selected from the group consisting of yttrium (Y), samarium (Sm), gadolinium (Gd), cadmium (Cd), neodymium (Nd), holmium (Ho) Thin film manufacturing method. 제 1항에 있어서,
상기 제1초전도층은 상기 초전도물질 100원자수에 대하여 상기 제1자속고정점이 1 내지 20원자수로 포함되며,
상기 제2초전도층은 상기 초전도물질 100원자수에 대하여 상기 제2자속고정점이 1 내지 20원자수로 포함되는 것을 특징으로 하는 초전도 다층박막 제조방법.The method according to claim 1,
Wherein the first superconducting layer includes the first magnetic flux fixing point in an atomic number of 1 to 20 with respect to the number of atoms of the superconducting material 100,
Wherein the second superconducting layer comprises 1 to 20 atomic percent of the second magnetic flux fixing point with respect to the number of atoms of the superconducting material. 금속기판-완충층-초전도층을 포함하는 초전도 다층박막에 있어서,
상기 초전도층은,
점 형상의 0차원자속고정점(Point pinning center)을 가지는 제1초전도층과;
기둥 형상의 1차원자속고정점(Columnar pinning center)을 가지는 제2초전도층을 포함하는 것을 특징으로 하는 초전도 다층박막.In a superconducting multilayer thin film including a metal substrate-buffer layer-superconducting layer,
Wherein the superconducting layer comprises:
A first superconducting layer having a point-shaped zero-dimensional flux pinning center;
And a second superconducting layer having a columnar pinning center and a one-dimensional columnar pinning center.
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