KR101607775B1 - Light emitting display module with side wall reflection function and light emitting device using the same - Google Patents

Abstract

The present invention relates to a light emitting display module with a side surface reflection function and a light emitting device using the same, wherein a reflection part is mounted on the side surface of a LED chip and a beam angle of the light that is emitted from the LED chip is concentrated in a certain direction. The light emitting device includes: a substrate; an n-type semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type semiconductor layer; a p-type semiconductor layer that is formed on the active layer; a p-type electrode that is formed on the p-type semiconductor layer; an n-type electrode that is formed on one side of the n-type semiconductor layer; a reflection part that is mounted on the side surface of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer, to reflect the emitted light. According to the present invention, the reflection part is mounted on the side surface of the LED module and the beam angle of the light that is emitted from the LED module can be concentrated in a certain direction, thereby improving the efficiency of the light concentration and providing a narrow bea, angle of the light.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode (LED)

The present invention relates to an LED module having a side reflection function and a light emitting device using the LED module. More particularly, the present invention relates to a light emitting device using a reflector, To an LED module having a side reflection function and a light emitting device using the LED module.

The light-emitting diode is a light-emitting device that emits light when electrons are transited. Light emission of the light-emitting diode occurs when electrons in a semiconductor conduction band recombine with holes in a valence band .

The light emitting diode is smaller in size than the conventional light source, has a long life, and has low power and high efficiency because electric energy is directly converted into light energy.

It is also used for display devices such as display devices for automotive instruments, light sources for optical communication, display lamps for various electronic devices, card readers for numeric display devices and calculators.

In recent years, light emitting diodes (LEDs) and laser diodes (LDs) using gallium nitride have applications such as large scale full color flat panel displays, traffic lights, indoor lighting, high density light sources, high resolution output systems, and optical communication This is the subject of interest of many researchers, and attempts to commercialize them have been continuing.

The wavelength of the light emitted from such a light emitting diode is a function of the band gap of the semiconductor material used. In the case of a small band gap, it is preferable to emit light of a lower energy and a longer wavelength and to emit light of a shorter wavelength A material having a wide band gap is required.

For example, in the case of gallium phosphide, the light emitted by the zinc and oxygen atoms is red (wavelength: 700 nm), and the emission associated with the nitrogen atom is controlled by the emission wavelength of the light emitting diode Green (wavelength 550 nm).

On the other hand, silicon carbide (SiC) and Group III nitride-based semiconductors, particularly GaN (gallium nitride), are semiconductor materials having a relatively large bandgap in order to generate light having blue or ultraviolet wavelengths in the spectrum.

In addition to the color itself, the short-wavelength light emitting diode has the advantage of increasing the storage space of the optical recording device (about four times that of red light).

1 is a cross-sectional view of a general LED chip 10, in which an n-type semiconductor layer 12, an active layer 13 and a p-type semiconductor layer 14 are sequentially formed on a substrate 11, a p-electrode 15 is formed on the p-type semiconductor layer 14 and a n-type semiconductor layer 12 is formed on the p-type semiconductor layer 14. The mesa-etched n -Type semiconductor layer 12 is formed with an n-electrode 16 thereon.

When the positive light load is applied to the p-electrode 15 and the negative load is applied to the n-electrode 16, the light-emitting diode chip thus completed is separated from the p-type semiconductor layer 14 and the n-type semiconductor layer 12 Holes and electrons are collected and recombined in the active layer 13 to emit light in the active layer 13.

In Korean Patent Registration No. 10-1158126 (titled gallium nitride light emitting diode), by providing a one-dimensional or two-dimensional metal pattern, the current injection of the light emitting diode is made uniform and the current injection area is increased A structure capable of increasing the luminous efficiency has been proposed.

However, such a conventional LED chip or light emitting diode has a problem in that the light efficiency is lowered because a large amount of light is emitted to the outside through the side surface of the generated light.

2 is a cross-sectional view showing the structure of a typical LED package 20 in which an electrode frame 22 is formed on an upper surface of a substrate 21, an LED chip 10 is mounted on the electrode frame 22, The LED chip 10 is connected to the electrode frame 22 via a wire 23. A cavity 24 having a reflection surface 24a is formed on the electrode frame 22, An encapsulant 25 is provided inside the LED chip 10 to protect the LED chip 10 and the wire 23.

The conventional LED package 20 is configured such that the light output to the side of the LED chip 10 is reflected through the reflection surface 24a formed inside the cavity 24 to improve the light condensing efficiency.

Therefore, in the conventional LED package 20, the light generated from the LED chip 10 is reflected upward to be condensed, and the cavity 24 for adjusting the angle of light distribution must be installed, The structure and manufacturing process of the package 20 become complicated.

Korean Registered Patent Publication No. 10-1158126

In order to solve the above problems, the present invention provides an LED module having a side reflection function, which is provided with a reflector on a side surface of the LED chip to improve the directional angle of light emitted from the LED chip to be concentrated in a predetermined direction, and a light emitting device using the same .

According to an aspect of the present invention, An n-type semiconductor layer formed on the substrate; An active layer formed on the n-type semiconductor layer; A p-type semiconductor layer formed on the active layer; A p-type electrode formed on the p-type semiconductor layer; An n-type electrode formed on one side of the n-type semiconductor layer; And an insulating portion for protecting the substrate, the side surfaces of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer from being insulated from the bottom surface of the substrate, and a reflective film provided on the insulating portion, Type semiconductor layer, the active layer, and the p-type semiconductor layer and the bottom surface of the substrate so as to narrow the directivity angle of the emitted light.

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Further, the substrate according to the present invention is a light-transmitting material, preferably sapphire.

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In addition, the insulating portion according to the present invention is characterized in that the insulating portion is any one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, ridium fluoride, calcium fluoride, and magnesium fluoride.

Also, the reflective film according to the present invention is a metal reflective film formed of any one selected from the group consisting of Ag, Al, Au, Pt, Ru, and Ir.

The reflective layer 172 may be at least one of an ODR (Omni Directional Reflective) and a DBR (Distributed Bragg Reflector).

The reflective film according to the present invention is formed of any one selected from the group consisting of TiN, AlN, TiO2, Al2O3, SnO2, WO3, and ZrO2.

The present invention also provides a semiconductor device comprising: an n-type semiconductor layer formed on a substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer; and p Type semiconductor layer, an n-type electrode formed on one side of the n-type semiconductor layer, an insulating portion for protecting the side surface of the substrate, the n-type semiconductor layer, the active layer and the p- Type semiconductor layer, the active layer and the p-type semiconductor layer so that the directivity angle of the emitted light is concentrated in a predetermined direction and the directivity angle of the emitted light is narrowed, An LED module having a reflecting portion for reflecting light transmitted to the bottom surface of the substrate upward; An electrode frame fixing the LED module; A wire connecting the LED module and the electrode frame; And an encapsulant for protecting the LED module, the electrode frame, and the wire.

According to the present invention, a reflective portion is provided on a side surface of the LED module, thereby improving the light collecting efficiency and providing a narrow angle of illumination, by improving the directional angle of light emitted from the LED module to be concentrated in a predetermined direction.

In addition, the present invention can provide a light emitting device that forms a diffraction angle with a narrow directivity angle without a cavity for reflecting light generated from the LED module in an upward direction, and by manufacturing a light emitting device without a cavity, The configuration and manufacturing process can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a sectional view showing the structure of a general LED chip.
2 is a sectional view showing a structure of a general LED package.
3 is a sectional view showing the structure of an LED module having a side reflection function according to the present invention.
4 is a cross-sectional view illustrating a structure of a light emitting device using an LED module having a side reflection function according to the present invention.

Hereinafter, preferred embodiments of an LED module having a side reflection function and a light emitting device using the LED module according to the present invention will be described in detail with reference to the accompanying drawings.

(LED module)

3 is a cross-sectional view showing the structure of an LED module having a side reflection function according to the present invention.

3, the LED module 100 having a side reflection function according to the present invention is provided with a reflector 170 on a side surface thereof, so that the direction of light emitted from the LED module 100 is concentrated in the upward direction The n-type semiconductor layer 120, the active layer 130, the p-type semiconductor layer 140, the p-type electrode 150, the n-type electrode 160, (170).

The substrate 110 is a transparent substrate made of a translucent material, and is preferably formed of sapphire.

The n-type semiconductor layer 120 is an n-type III-V group compound semiconductor layer formed on the substrate 110. For example, the n-type semiconductor layer 120 is formed of an n-GaN compound, Or a compound semiconductor layer.

The active layer 130 is formed on the n-type semiconductor layer 120, and light is emitted by recombination of the n-type carrier and the p-type carrier.

The p-type semiconductor layer 140 is preferably a p-type III-V group compound semiconductor layer formed on the active layer 130, but it is not limited thereto. For example, the p- Or a compound semiconductor layer.

The p-type electrode 150 is formed on the p-type semiconductor layer 140.

The n-type electrode 160 is formed on one side of the n-type semiconductor layer 120 exposed through the mesa etching from the p-type semiconductor layer 140 to the n-type semiconductor layer 120.

The reflective portion 170 is formed on the side surfaces of the n-type semiconductor layer 120, the active layer 130 and the p-type semiconductor layer 140 and on the bottom surface of the substrate 110 to form the n-type semiconductor layer 120, The light emitting layer 130 and the p-type semiconductor layer 140 are upwardly reflected. The insulating layer 171 and the reflective layer 172 are formed.

The insulating portion 171 is formed to protect the bottom surface of the substrate 110, the n-type semiconductor layer 120, the active layer 130 and the side surfaces of the p-type semiconductor layer 140 from insulation, And is coated with any one material selected from the group consisting of silicon nitride, silicon oxynitride, aluminum oxide, lidium fluoride, calcium fluoride, and magnesium fluoride.

The reflective layer 172 is formed on the insulating layer 171 and is coated with a metal material selected from the group consisting of Ag, Al, Au, Pt, Ru, and Ir to reflect light upward .

The reflective layer 172 may be formed by coating a dielectric reflective layer made of a highly reflective material such as at least one of ODR (Omni Directional Reflective) and DBR (Distributed Bragg Reflector) 172 is formed of any one selected from the group consisting of TiN, AlN, TiO2, Al2O3, SnO2, WO3, and ZrO2.

Accordingly, the light emitted toward the sides of the n-type semiconductor layer 120, the active layer 130 and the p-type semiconductor layer 140 is reflected upward and the light transmitted to the bottom of the transparent substrate 110 is reflected upward It is possible to provide the LED module 100 that forms a diffractive angle with a narrow directivity angle.

(Light emitting device)

4 is a cross-sectional view illustrating the structure of a light emitting device using an LED module having a side reflection function according to the present invention.

First, repetitive descriptions of the same components are omitted, and the same reference numerals are used for the same components.

The light emitting device 200 according to the present invention includes an LED module 100 for irradiating light upwardly through bottom and side reflections, an electrode frame 210, a wire 220 and a rod support 230 .

3 and 4, the LED module 100 includes an n-type semiconductor layer 120 formed on a substrate 110, an active layer 130 formed on the n-type semiconductor layer 120, A p-type semiconductor layer 140 formed on the active layer 130, a p-type electrode 150 formed on the p-type semiconductor layer 140, The n-type semiconductor layer 120, the active layer 130, and the p-type semiconductor layer 140 are formed on the bottom surface of the substrate 110, The active layer 130 and the p-type semiconductor layer 140 are upwardly reflected by the reflective portion 170 and the bottom surface of the transparent substrate 110 So that a diffractive angle with a narrow directivity angle is formed.

The electrode frame 210 allows power supply for the operation of the LED module 100 and fixes the LED module 100.

The wire 220 connects the p-type electrode 150 and the n-type electrode 160 of the LED module 100 to the electrode frame 210 to supply power to the LED module 100.

The encapsulant 230 is formed of silicon, epoxy or the like to protect the LED module 100, the electrode frame 210 and the wires 220. The encapsulant 230 may be formed on the LED module 100, And further comprises a fluorescent material (not shown) for exciting any color.

Accordingly, it is possible to provide a light emitting device 200 that forms a diffraction angle with a narrow directivity angle without a cavity for reflecting light generated from the LED module 100 in an upward direction, The structure and manufacturing process of the light emitting device 200 can be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that

In the course of the description of the embodiments of the present invention, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, , Which may vary depending on the intentions or customs of the user, the operator, and the interpretation of such terms should be based on the contents throughout this specification.

100: LED module
110: substrate
120: an n-type semiconductor layer
130: active layer
140: a p-type semiconductor layer
150: p-type electrode
160: n-type electrode
170:
171:
172:
200: Light emitting device
210: Electrode frame
220: wire
230: sealing material

Claims (10)

A substrate 110;
An n-type semiconductor layer 120 formed on the substrate 110;
An active layer 130 formed on the n-type semiconductor layer 120;
A p-type semiconductor layer 140 formed on the active layer 130;
A p-type electrode 150 formed on the p-type semiconductor layer 140;
An n-type electrode 160 formed on one side of the n-type semiconductor layer 120; And
An insulating portion 171 for protecting the side surfaces of the substrate 110, the n-type semiconductor layer 120, the active layer 130 and the p-type semiconductor layer 140 and the bottom surface of the substrate 110 from insulation, And a reflective film 172 provided on the insulating portion 171. The reflective film 172 is formed on the insulating layer 171 so that the directivity angle of the emitted light is concentrated in a predetermined direction and the n-type semiconductor layer 120, And a reflector 170 for reflecting the light transmitted through the side surface of the p-type semiconductor layer 130 and the bottom surface of the substrate 110 upward.
delete The method according to claim 1,
Wherein the substrate (110) is a translucent material.
The method of claim 3,
Wherein the substrate (110) is sapphire.
delete The method according to claim 1,
Wherein the insulating portion 171 is one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, ridium fluoride, calcium fluoride, and magnesium fluoride. The LED module has.
The method according to claim 1,
Wherein the reflective layer is a metal reflective layer formed of any one selected from the group consisting of Ag, Al, Au, Pt, Ru, and Ir.
The method according to claim 1,
Wherein the reflective layer 172 is at least one of a non-directional reflective layer (ODR) and a distributed Bragg reflector (DBR).
9. The method of claim 8,
Wherein the reflective layer is formed of one selected from the group consisting of TiN, AlN, TiO2, Al2O3, SnO2, WO3, and ZrO2.
An n-type semiconductor layer 120 formed on the substrate 110, an active layer 130 formed on the n-type semiconductor layer 120, and a p-type semiconductor layer 140 formed on the active layer 130 A p-type electrode 150 formed on the p-type semiconductor layer 140; an n-type electrode 160 formed on one side of the n-type semiconductor layer 120; an insulating portion 171 for protecting the side surfaces of the n-type semiconductor layer 120, the active layer 130 and the p-type semiconductor layer 140 and the bottom surface of the substrate 110 from insulation, Type semiconductor layer 120, the active layer 130, and the p-type semiconductor layer 140 are formed so that the directivity angle of the emitted light is concentrated in a predetermined direction and the directivity angle of the emitted light is narrowed, An LED module 100 having a reflective portion 170 for upwardly reflecting light transmitted through a side surface of the semiconductor layer 140 and a bottom surface of the substrate 110;
An electrode frame (210) for fixing the LED module (100);
A wire 220 connecting the LED module 100 and the electrode frame 210; And
A light emitting device using an LED module having a side reflection function including the LED module (100), the electrode frame (210), and the sealing material (230) for protecting the wire (220).

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