KR101607520B1 - Substrate treating apparatus and substrate treating method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to an embodiment of the present invention includes a chamber; A support member positioned below the inner space of the chamber and supporting the substrate, the support member having a lower electrode; A first electrode member positioned above the inner space; A second electrode member positioned above the inner space and positioned below the first electrode; And a gas supply member connected to the chamber and supplying the process gas to the inner space.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus,

The present invention relates to a substrate processing apparatus.

Plasma can be used for the processing of the substrate. For example, a plasma may be used for the etching process or deposition fixation. Plasma is an ionized gas state produced by very high temperature, strong electric field or RF electromagnetic fields, and composed of ions, electrons, radicals, and so on. The etching process is performed by colliding the ion particles contained in the plasma with the substrate. In addition, a gas containing a substance to be deposited on the substrate may be reacted with the plasma in the deposition process, and then the deposition material may be supplied onto the substrate.

In order to improve the efficiency of the substrate processing process using such a plasma, it is necessary to control the electrons, ions, or radicals contained in the plasma.

The present invention provides a substrate processing apparatus and a substrate processing method capable of efficiently processing a substrate by using plasma.

The present invention also provides a substrate processing apparatus and a substrate processing method capable of individually controlling an electric field formed in an upper portion of a chamber and an electric field formed in a lower portion of the chamber.

The present invention also provides a substrate processing apparatus and a substrate processing method capable of adjusting the electrons contained in the process gas supplied from the upper portion of the chamber to the lower portion of the chamber.

According to an aspect of the present invention, there is provided a chamber comprising: a chamber; A support member positioned below the inner space of the chamber and supporting the substrate, the support member having a lower electrode; A first electrode member positioned above the inner space; A second electrode member positioned above the inner space and positioned below the first electrode; And a gas supply member connected to the chamber and supplying the process gas to the inner space.

A first adjusting member connected to the first electrode member and adjusting a voltage applied to the first electrode member; And a second adjusting member connected to the second electrode member and adjusting a voltage applied to the second electrode member.

Also, the voltage applied by the first adjusting member may be higher than the voltage applied by the second adjusting member.

Also, the voltage applied to the lower electrode may be higher than the voltage applied to the second electrode member.

The first electrode member may include a first connection portion connected to the chamber; And a first distribution part provided in a plate shape and formed with first distribution holes, the second electrode part having a second connection part connected to the chamber; And a second distribution portion provided in a plate shape and formed with second distribution holes.

In addition, the first distribution holes and the second distribution holes may be vertically aligned.

In addition, the second distribution holes may have a smaller area than the upper area.

In addition, the inner surfaces of the second distribution holes may be stepped.

In addition, the first distributor may be connected to the first connection part in a movable manner.

The second distribution unit may be connected to the second connection unit so as to be able to move up and down.

A first elevating member positioned outside the chamber; And a first elevating rod which is located in a first elevating hole formed in the chamber and connects the first elevating member and the first connecting portion, wherein an inner wall of the chamber is provided with a groove corresponding to a shape of an upper end of the first connecting portion, Shaped first receiving portion can be formed.

A second elevating member positioned outside the chamber; And a second lifting rod which is located in a second lifting hole formed in the chamber and connects the second lifting member and the second connecting portion, wherein an inner wall of the chamber is provided with a groove corresponding to the shape of the upper end of the second connecting portion, Shaped second receiving portion can be formed.

The gas supply member may be connected to a first distribution space formed between the chamber and the first electrode member.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: supplying a process gas to a first distribution space formed between a chamber and a first electrode member located in an inner space of the chamber; Supplying the process gas to a second distribution space formed between the first electrode member and a second electrode member positioned below the first electrode member, and applying a voltage to the first electrode member and the second electrode member And exciting the process gas with a plasma; Supplying the process gas to the process space located below the second electrode member through the second electrode member, and treating the substrate to be supported by the support member.

In addition, voltages may be applied to the first electrode member and the second electrode member so as to be formed in the electric field in the direction of the first electrode member from the second electrode member.

The voltage applied to the first electrode member or the second electrode member is adjusted so that only electrons greater than a predetermined energy among the electrons included in the process gas supplied to the process space through the second electrode member pass through .

Also, a negative voltage may be applied to the second electrode member.

In addition, a voltage may be applied to the lower electrode included in the support member to form an electric field between the second electrode member and the support member.

In addition, the voltage applied to the lower electrode may be higher than the voltage applied to the second electrode member.

In addition, the process gas may be supplied to the chamber such that the flow forms a steady state flow.

Also, the process gas flows from the first distribution space to the second distribution space through first distribution holes formed in the first electrode member, and flows through the second distribution holes formed in the second electrode member to the second distribution hole And may flow from the dispensing space to the process space.

In addition, the second distribution holes may have a smaller area than the upper area, and the process gas may be accelerated in the process of flowing the second distribution holes.

According to another aspect of the present invention, an electric field is formed between a first electrode member located on an upper portion of an inner space of a chamber and a second electrode member positioned below the first electrode member, Exciting the process gas supplied between the second electrode members with a plasma; And an electric field is formed between the second electrode member and a supporting member which is positioned below the inner space and supports the substrate, and supplies the electric field to the process space between the second electrode member and the supporting member through the second electrode member And a step of exciting the process gas with a plasma.

An electric field may be formed between the first electrode member and the second electrode member so that the one electrode member faces the second electrode member.

According to an embodiment of the present invention, a substrate can be efficiently processed using plasma.

In addition, according to an embodiment of the present invention, the electric field formed on the upper part of the chamber and the electric field formed on the lower part of the chamber can be individually adjusted.

In addition, according to an embodiment of the present invention, the energy of electrons contained in the process gas supplied from the upper portion of the chamber to the lower portion of the chamber can be controlled.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a diagram showing an electric field formed around the electrode unit of FIG. 1 according to one embodiment.
Fig. 3 is a diagram showing the energy distribution of electrons included in the excited plasma in the second distribution space.
FIG. 4 is a view showing a state in which some of the electrons are moved to the distribution space.
5 is a diagram showing voltages applied to the first electrode member and the second electrode member according to an example.
6 is a diagram showing voltages applied to the first electrode member and the second electrode member according to another embodiment.
7 is a view showing voltages applied to the first electrode member and the second electrode member according to still another embodiment.
8 is a view showing an electrode unit according to another embodiment of the present invention.
9 is a view showing an electrode unit according to another embodiment.
10 is a view showing the electrode unit according to the fourth embodiment.
11 is a perspective view of the first distribution unit of Fig.
12 is a perspective view of a first distribution part and a second distribution part according to still another embodiment.
13 is a view showing a substrate processing apparatus according to another embodiment.
14 is a view showing a substrate processing apparatus according to another embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus 10 includes a chamber 100, a support member 200, a gas supply member 300, and an electrode unit 400. The substrate processing apparatus 10 performs plasma processing on the substrate W.

The chamber 100 forms an internal space 110 in which a process for the substrate W is performed. An opening (not shown) may be formed in one side wall of the chamber 100. The opening is provided as a passage through which the substrate W can enter and exit the inner space 110. The opening is opened and closed by a door (not shown). In the chamber 100, an exhaust hole 120 is formed. For example, an exhaust hole 120 may be formed in the bottom surface of the chamber 100. The exhaust hole 120 is connected to the exhaust line 121. The reaction by-products generated in the process and the gas staying in the internal space 110 can be discharged to the outside through the exhaust line 121.

The support member 200 is positioned under the inner space 110 to support the substrate W. [ The support member 200 includes a dielectric plate 210, a lower electrode 220, and a heater 230.

The dielectric plate 210 is located on top of the support member 200. The dielectric plate 210 may be provided in a shape corresponding to the substrate W. [ In one example, the dielectric plate 210 may be provided as a dielectric substance. A substrate W is placed on the upper surface of the dielectric plate 210. The upper surface of the dielectric plate 210 may have a smaller radius than the substrate W. [ Thus, the edge region of the substrate W may be located outside the dielectric plate 210. [ The first supply channels 211 may be formed in the dielectric plate 210. The first supply flow paths 211 are formed downward from the upper surface of the dielectric plate 210. The first supply flow paths 211 supply the heat transfer medium to the bottom surface of the substrate W. [

A lower electrode 220 and a heater 230 are buried in the dielectric plate 210. The lower electrode 220 may be positioned above the heater 230. The lower electrode 220 is electrically connected to the lower power source 221. The lower power source 221 may include a DC power source. The lower power source 221 may apply a voltage to the lower electrode 220. When a voltage is applied to the lower electrode 220, the substrate W is attracted to the dielectric plate 210 by the electric force generated between the lower electrode 220 and the substrate W.

The heater 230 heats the substrate W. For example, the heater 230 may be provided as a lead wire electrically connected to an external power source (not shown). The heater 230 includes a helical coil. The heaters 230 may be embedded in the dielectric plate 210 at regular intervals. The heater 230 generates heat by electric resistance against electric power applied from an external power source. The generated heat is transferred to the substrate W through the dielectric plate 210. The substrate W is maintained at a predetermined temperature by the heat generated in the heater 230. Further, a cooling channel (not shown) is provided in the support member 200, so that the support member 200 can be cooled.

A focus ring 280 may be provided in the edge region of the support member 200. The focus ring 200 has a ring shape and is disposed along the periphery of the dielectric plate 210. The upper surface of the focus ring 280 may be stepped so that the outer portion 280a is higher than the inner portion 280b. The upper surface inner side portion 280b of the focus ring 280 is located at the same height as the upper surface of the dielectric plate 210. [ The upper side inner side portion 280b of the focus ring 280 supports the edge region of the substrate W positioned outside the dielectric plate 210. [ The outer side portion 280a of the focus ring 280 is provided so as to surround the edge region of the substrate W. [ The focus ring 280 extends the electric field forming region such that the substrate W is positioned at the center of the region where the plasma is formed. Thereby, the plasma is uniformly formed over the entire region of the substrate W, so that each region of the substrate W can be uniformly processed.

The gas supply member 300 is connected to the chamber 100 through the supply line 310 to supply the process gas used for processing the substrate W into the inner space 110. For example, one or more supply holes 130 may be formed in the upper or side wall of the chamber 100. The supply line 310 connects the supply hole 130 and the gas supply member 300. The gas supply member 300 can supply one or more kinds of gas. For example, when the process for the substrate W is an etching process, the gas supply member 300 may be a gas such as one of oxygen, hydrogen, nitrogen, argon, helium, argon, ammonia (NH3), and carbon tetrafluoride Or two or more gases among these gases may be supplied together.

The electrode unit 400 is located at an upper portion of the inner space 110 and excites the plasma of the process gas supplied to the inner space 110 together with the lower electrode 220. The electrode unit 400 includes a first electrode member 410 and a second electrode member 420.

The first electrode member 410 includes a first connection part 411 and a first distribution part 412. A first distribution space 111 is formed between the upper portion of the first electrode member 410 and the inner wall of the chamber 100. The supply line 310 may be connected to the chamber 100 to supply process gas to the first distribution space 111. The first electrode member 410 is connected to the upper portion of the inner wall of the chamber 100. In one example, the first connection portion 411 is provided in a ring shape and may extend downward from the inner upper wall of the chamber 100. The first distributor 412 may be provided in a plate shape and may be positioned at a lower end of the first connection portion 411 or an inner lower portion of the first connection portion 411. A plurality of first distribution holes 415 are formed in the first distribution portion 412. The first electrode member 410 is connected to the first adjusting member 510. One side of the first adjusting member 510 is grounded. The first adjusting member 510 connects the first electrode member 410 to the ground or adjusts a voltage applied to the first electrode member 410.

As another example, the first connection portion 411 may extend inward from the side wall of the chamber 100. The first distributor 412 may be provided to be connected to the first connection portion 411 in a plate shape. In addition, the first connection portion 411 and the first distribution portion 412 may be integrally provided.

The second electrode member 420 includes a second connection portion 421 and a second distribution portion 422. The second electrode member 420 is located outside the first electrode member 410 or below the second electrode member 420 and between the first electrode member 410 and the second electrode member 420, A distribution space 112 is formed. A process space 113 is formed below the second electrode member 420. The second electrode member 420 is connected to the upper portion of the inner wall of the chamber 100. For example, the second connection portion 421 may be provided in a ring shape outside the first connection portion 411 provided in a ring shape. The lower end of the second connection portion 421 may extend downwardly below the first electrode member 410. The second distribution portion 422 may be provided in a plate shape and may be connected to a lower end of the second connection portion 421 or an inner lower portion of the second connection portion 421. A plurality of second distribution holes 425 are formed in the second distribution portion 422. The second electrode member 420 is connected to the second adjusting member 520. One side of the second adjusting member 520 is grounded. The second adjusting member 520 connects the second electrode member 420 with the ground or adjusts the voltage applied to the second electrode member 420.

As another example, the second connection portion 421 may extend inward from the side wall of the chamber 100. The second distribution portion 422 may be provided to be connected to the second connection portion 421 in a plate shape. The second connection portion 421 and the second distribution portion 422 may be integrally provided.

2 is a diagram showing an electric field formed around the electrode unit of FIG. 1 according to one embodiment.

1 and 2, when the substrate W to be processed is brought into the inner space 110, the gas supply member 300 supplies the process gas to the first distribution space 111. [ The first adjusting member 510 and the second adjusting member 520 allow the first electrode member 410 and the second electrode member 420 to have set potentials, respectively. At this time, the first adjusting member 510 and the second adjusting member are adjusted such that the potential of the first electrode member 410 is higher than that of the second electrode member 420. An electric field is formed in the first electrode member 410 in the direction of the second electrode member 420 in the second distribution space 112 between the first electrode member 410 and the second electrode member 420.

The process gas supplied to the first distribution space 111 flows into the second distribution space 112 through the first distribution hole 415. The process gas may be excited into the plasma by an electric field formed in the second distribution space 112. The excited plasma includes electrons and cations.

FIG. 3 is a view showing energy distribution of electrons included in the excited plasma in the second distribution space, and FIG. 4 is a diagram showing a state in which a part of electrons is moved to the distribution space.

Referring to FIG. 3, electrons may have different energies from each other. In addition, the direction of motion of the electrons can be randomly formed. The electrons are urged in the direction of the first electrode member 410 from the second electrode member 420 by the electric field of the second distribution space 112.

Some of the electrons can be directed downward from above. As these electrons become closer to the second electrode member 420, the magnitude of the downward-directed component of the velocity component decreases due to the force received from the electric field. Some of the electrons moving downward have a velocity component directed downward even after reaching the second electrode member 420. [ These electrons may flow into the process space 113 through the second distribution holes 425. [ And is not affected in the course of passing through the second electrode member 420 of the component perpendicular to the electric field at the speed of these electrons. Therefore, the energy of these electrons by the velocity component in the direction perpendicular to the electric field is preserved. On the other hand, electrons whose velocity component is zero from above to below before reaching the second electrode member 420 can not pass through the second electrode member 420.

The magnitude of the velocity component in one direction among the electron velocity components is proportional to the magnitude of the total energy of the electrons. Therefore, most of the electrons passing through the second electrode member 420 have a reference energy or higher. In addition, electrons having a small energy can not pass through the second electrode member 420.

5 is a diagram showing voltages applied to the first electrode member and the second electrode member according to an example.

Referring to FIG. 5, the first adjusting member 510 may apply a first voltage V1 whose magnitude varies with time to the first electrode member 410. The waveform of the first voltage V1 may have a sinusoidal wave, a non-sinusoidal wave, a square wave, or a triangular wave. In addition, the frequency of the first voltage V1 can be adjusted. The first voltage V1 may be provided in alternating current and may vary in size up and down with reference to zero. Also, the first voltage V1 may include a direct current component and an alternating current component, and may vary in size up or down based on a voltage value that is greater than or less than zero.

The second adjusting member 520 may apply a second voltage V2 whose magnitude varies with time to the second electrode member 420. [ The waveform of the second voltage V2 may have a sinusoidal wave, a non-sinusoidal wave, a square wave, or a triangular wave. The frequency of the second voltage V2 can be adjusted. The waveform and frequency of the second voltage V2 may be the same as or different from the waveform and frequency of the first voltage V1. The second voltage (V2) is provided as an alternating current so that the magnitude of the second voltage (V2) can be changed up and down with reference to 0. In addition, the second voltage V2 may include a DC component and an AC component, and may vary in magnitude based on a potential value that is greater than or less than zero. The magnitude of the second voltage V2 is less than the magnitude of the first voltage V1.

6 is a diagram showing voltages applied to the first electrode member and the second electrode member according to another embodiment.

Referring to FIG. 6, a first voltage V1b whose magnitude varies with time is applied to the first electrode member 410, and a negative DC voltage is applied to the second electrode member 420. The first voltage V1b may be applied in the same or similar manner as the first voltage V1b of Fig.

In addition, a first voltage of a direct current is applied to the first electrode member 410, and a second voltage whose magnitude varies with time may be applied to the second electrode member 420. The second voltage may be applied in the same or similar manner as the second voltage V2 of FIG.

7 is a view showing voltages applied to the first electrode member and the second electrode member according to still another embodiment.

7, a DC first voltage V1c may be applied to the first electrode member 410, and a second voltage V2c may be applied to the second electrode member 420. Referring to FIG. At this time, the first voltage V1c is provided larger than the second voltage V2c.

In addition, one of the first electrode member 410 or the second electrode member 420 may be provided with a voltage of zero.

Referring again to FIGS. 1 and 4, an electric field is formed in the process space 113 by a potential difference between the second electrode member 420 and the lower electrode 220. At this time, the voltage applied to the lower electrode 220 may be higher than the voltage applied to the second electrode member 420 so that the electric field may be directed from the lower electrode 220 toward the second electrode member 420 . The voltage applied to the lower electrode 220 may be applied in the same or similar manner as the first voltages V1, V1b, and V1c of FIGS.

Some of the process gases supplied to the chamber 100 may be excited into the plasma by an electric field formed in the process space 113. In addition, the process gas can dissociate into electrons and cations through collisions with electrons, or can become radicals. Specifically, when an electron having energy above a certain energy impinges on the process gas, electrons in the process gas molecule are separated and the process gas is dissociated into electrons and cations. On the other hand, if electrons with less energy collide with the process gas molecules, the process gas molecules become neutral radicals.

Electrons introduced into the process space 113 in the second distribution space 112 are positioned adjacent to the second electrode member 420. Accordingly, the electrons are increased in the magnitude of the downward-directed velocity from the electric field formed between the second electrode member 420 and the lower electrode 220. Further, among the energies of the electrons, the energy due to the velocity components perpendicular to the up and down directions is conserved. Accordingly, electrons supplied to the process space 113 in the second distribution space 112 may have sufficient energy to dissociate the process gas into electrons and cations after collision with the process gas.

It also has electrons and cations or sufficient energy generated by collision of the process gas with electrons having sufficient energy. Therefore, such electrons can collide with the process gas again, thereby dissociating the process gas. Further, the cations have sufficient energy, and the substrate processing efficiency can be improved. Also, a part of the positive ions may move to the second electrode member 420 and collide with the second electrode member 420 to generate electrons. These electrons are generated by cations having sufficient energy, so that they have a sufficient inhibition. Thus, such electrons can dissociate the process gas into electrons and cations in the process space 113.

8 is a view showing an electrode unit according to another embodiment of the present invention.

Referring to FIG. 8, the second distribution holes 425b may be formed to have different areas of upper and lower portions. That is, the inner surfaces of the second distribution holes 425b may be stepped at least one time so that the area of the second distribution holes 425b gradually decreases from the upper portion to the lower portion. The first distribution holes 415b may be aligned with the first distribution holes 415b.

The gas supply member 300 may supply the process gas at a set pressure so that the process gas flows at a constant flow into the first distribution space 111, the second distribution space 112, and the process space 113 . In one example, the gas supply member 300 may supply the process gas in a steady state flow with a constant flow rate per unit time at the step of introducing the process gas into the chamber 100. Therefore, the flow rate of the process gas passing through the second distribution holes 425b is increased. As a result, the speed of the electrons supplied to the process space 113 without being filtered by the electric field formed in the second distribution space 112 is also increased.

9 is a view showing an electrode unit according to another embodiment.

Referring to FIG. 9, the second distribution holes 425c may have an inclined inner surface so that the area becomes narrower from the upper part to the lower part.

FIG. 10 is a view showing an electrode unit according to a fourth embodiment, and FIG. 11 is a perspective view of the first distribution unit in FIG.

Referring to FIGS. 10 and 11, the first division portion 412d may be divided into two or more regions. For example, a first region 413 may be provided at the center of the first division portion 412d, and a second region 414 may be provided outside the first region 413. At this time, the second region 414 may be in the form of a ring having the same center as the first region 413. An insulating layer 416 is formed between the first region 413 and the second region 414 so that the first region 413 and the second region 414 can be electrically disconnected. The first adjustment members 511 may be provided in a plurality of the same as the divided areas of the first distribution unit 412d. Each of the first adjusting members 511 is connected to each of the regions formed in the first distributing portion 412d, and may apply different voltages to each region.

The second division portion 422d may be divided into two or more regions in a manner similar to the first division portion 412d. The first region 423 of the second distribution portion 422d is vertically aligned with the first region 413 of the first distribution portion 412d and the second region 424 of the second distribution portion 422d is aligned vertically with the first region 413 of the first distribution portion 412d, Are vertically aligned with the second region 414 of the first division portion 412d. The second adjustment members 521 may be provided in a plurality of the same manner as the divided areas of the second distribution portion 422d. Each of the second adjusting members 521 may be connected to respective regions formed in the second distributor 422d to apply different voltages to the regions of the second distributor 422d.

The voltages applied to the regions of the first distributing portion 412d and the second distributing portion 422d aligned vertically can be individually adjusted. Therefore, the electric field formed in the second distribution space can be individually adjusted depending on the region.

12 is a perspective view of a first distribution part and a second distribution part according to still another embodiment.

Referring to FIG. 12, the first dividing section 412e may be divided into two or more regions on the outer side of the center. For example, two or more regions 413e may be formed along the circumference of the center of the first division portion 412e. Each of the regions 413e may be provided in a circular shape, an elliptical shape, a polygonal shape, or the like. Further, each of the regions 413e may have the same shape or different areas. An insulating layer 417 is provided between the respective regions 413e so that the respective regions 413e can be electrically separated.

The second distribution portion 422e may be provided in a shape corresponding to the first distribution portion 412e in the same or similar manner as the electrode units of Figs. 10 and 11. Therefore, the respective regions of the second division portion 422e can be aligned up and down with the respective regions 413e of the first division portion 412e.

The electrode unit may be connected to the first adjusting member 511 and the second adjusting member 521 in the same or similar manner as the electrode members of Figs. Thus, the electrode unit can individually adjust the electric field by region.

13 is a view showing a substrate processing apparatus according to another embodiment.

Referring to Fig. 13, the substrate processing apparatus 11 includes a chamber 101, a support member 201, a gas supply member 301, and an electrode unit 401.

The chamber 101 and the gas supply member 301 may be provided in the same or similar manner as the chamber 100 and the gas supply member 300 of the substrate processing apparatus 10 of Fig.

A lower power source 221 is connected to the lower electrode 225 provided on the support member 201. The lower power source 221 may include two or more power sources 226a and 226b. Each of the power sources 226a and 226b may be connected to the lower electrode 225 in parallel. Each of the power sources 226a and 226b can apply a DC voltage or an AC voltage to the lower electrode 225. [ In addition, each of the power sources 226a and 226b can apply a DC voltage and an AC voltage to the lower electrode 225 together. Each of the power supplies 226a and 226b may apply the same or different voltage to the lower electrode 225. [

The electrode unit 401 includes a first electrode member 430 and a second electrode member 440.

The first electrode member 430 includes a first connection portion 431 and a first distribution portion 432. A first distribution space 111a is formed between the upper portion of the first electrode member 430 and the inner wall of the chamber 101. [ The first connection portion 431 may be provided in the same or similar manner as the first connection portion 411 of the electrode unit 400 of FIG.

The first distribution portion 432 is provided in a plate shape and is vertically movably connected to the lower portion of the first connection portion 431.

A plurality of first distribution holes 435 are formed in the first distribution portion 432. The first electrode member 430 is connected to the first adjusting member 530.

The second electrode member 440 includes a second connection portion 441 and a second distribution portion 442. The second electrode member 440 is positioned below the first electrode member 430 and a second distribution space 112a is formed between the first electrode member 430 and the second electrode member 440. A process space 113 a is formed below the second electrode member 440. The second connection portion 441 may be provided in the same or similar manner as the second connection portion 421 of the second electrode member 420 of FIG.

The second distribution portion 442 is provided in a plate shape and is vertically movably connected to a lower portion of the second connection portion 441. A plurality of second distribution holes 445 are formed in the second distribution portion 442. The second electrode member 440 is connected to the second adjusting member 540.

The electric field formed between the first electrode member 430 and the second electrode member 440 can be controlled by adjusting the positions of the first and second distributors 432 and 442. Therefore, the energy of electrons supplied to the process space 113a through the plasma and the second distribution space 112a excited in the second distribution space 112a can be controlled.

Further, when the position of the second distributor 442 is adjusted, the electric field formed in the process space 113a can be adjusted. Therefore, the plasma excited in the process space 113a and the energy of electrons supplied in the second distribution space 112a can be controlled.

The first distribution portion 432 may be connected to the first connection portion 431 in a vertically movable manner and the second distribution portion 442 may be fixedly connected to the second connection portion 441.

The first distribution portion 432 may be fixedly connected to the first connection portion 431 and the second distribution portion 442 may be connected to the second connection portion 441 to be movable up and down.

14 is a view showing a substrate processing apparatus according to another embodiment.

14, the substrate processing apparatus 12 includes a chamber 102, a support member 202, a gas supply member 302, and an electrode unit 402.

The support member 202 and the gas supply member 302 may be provided in the same or similar manner as the support member 200 and the gas supply member 300 of the substrate processing apparatus 10 of Fig.

On the inner wall of the chamber 102, a first accommodating portion 121 and a second accommodating portion 122 are formed.

The first accommodating portion 121 and the second accommodating portion 122 may be formed on the upper surface of the chamber 102 by ring-shaped grooves. The second accommodating portion 122 is formed on the outside of the first accommodating portion 121. The configuration of the chamber 102 other than the first accommodating portion 121 and the second accommodating portion 122 may be provided in the same or similar manner as the chamber 100 of the substrate processing apparatus 10 of Fig.

The electrode unit 402 includes a first electrode member 450 and a second electrode member 460.

The first electrode member 450 includes a first connection portion 451 and a first distribution portion 452. A first distribution space 111b is formed between the upper portion of the first electrode member 450 and the inner wall of the chamber 102. [ The shape of the upper end of the first connection portion 451 is provided in the shape of a ring corresponding to the first accommodating portion 121. Therefore, the upper end of the first connection portion 451 can be received in the first accommodating portion 121. The first distributor 452 is provided in a plate shape and may be positioned at the lower end of the first connection portion 451 or the lower inner portion of the first connection portion 451. The first distribution portion 452 has a plurality of first distribution holes 455 formed therein. The first electrode member 450 is connected to the first adjusting member 550.

A part of the upper end of the first connection part 451 is connected to one end of the first lift rod 611 located in the first lift hole 125 formed in the chamber 102. The other end of the first lifting rod 611 is connected to the first lifting member 610 located outside the chamber 102. The first elevating member 610 is configured to elevate and lower the first electrode member 450 such that the upper end of the first connecting portion 451 is accommodated in the first accommodating portion 121, Adjust the height.

The second electrode member 460 includes a second connection portion 461 and a second distribution portion 462. A second distribution space 112b is formed between the second electrode member 460 and the first electrode member 450. The shape of the upper end of the second connecting portion 461 is provided in a ring shape corresponding to the second accommodating portion 122. Therefore, the upper end of the second connecting portion 461 can be received in the second receiving portion 122. [ The second distribution portion 462 may be provided in a plate shape and may be positioned at a lower end of the second connection portion 461 or an inner lower portion of the second connection portion 461. The second distribution portion 462 has a plurality of second distribution holes 465 formed therein. The second electrode member 460 is connected to the second adjusting member 560.

A part of the upper end of the second connection portion 461 is connected to one end of the second lift rod 612 located in the second lift hole 126 formed in the chamber 102. The other end of the second lift rod 612 is connected to the second lift member 620 located outside the chamber 102. The second elevating member 620 is moved up and down to adjust the degree of the upper end of the second connecting portion 461 being received in the second receiving portion 122, Adjust the height.

One of the first elevating member 610 and the second elevating member 620 is omitted so that only one of the first electrode member 450 and the second electrode member 460 can be elevated.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: chamber 120: exhaust hole
200: support member 210: dielectric plate
220: lower electrode 300: gas supply member
400: electrode unit 410: first electrode member
411: first connection part 412: first distribution part
420: second electrode member 421: second connection portion
422: Second division

Claims (24)

chamber;
A support member positioned below the inner space of the chamber and supporting the substrate, the support member having a lower electrode;
A first electrode member positioned above the inner space;
A second electrode member positioned above the inner space and positioned below the first electrode;
A first adjusting member, connected to the first electrode member, for adjusting a voltage applied to the first electrode member;
Wherein the second electrode member has a lower potential than the first electrode member so that an electric field is directed from the first electrode member to the second electrode member, A second adjusting member for adjusting the second adjusting member;
And a gas supply member connected to the chamber and supplying the process gas to the inner space. delete delete The method according to claim 1,
Wherein a voltage applied to the lower electrode is higher than a voltage applied to the second electrode member. The method according to claim 1,
The first electrode member includes a first connection portion connected to the chamber; And
And a first distribution portion provided in a plate shape and formed with first distribution holes,
The second electrode member includes a second connection portion connected to the chamber; And
And a second distribution portion provided in a plate shape and having second distribution holes formed therein. 6. The method of claim 5,
Wherein the first distribution holes and the second distribution holes are vertically aligned. 6. The method of claim 5,
And the second distribution holes are formed so that the area of the lower portion is narrower than the area of the upper portion. 8. The method of claim 7,
Wherein the second distribution holes are stepped on the inner surface. chamber;
A support member positioned below the inner space of the chamber and supporting the substrate, the support member having a lower electrode;
A first electrode member positioned above the inner space;
A second electrode member positioned above the inner space and positioned below the first electrode; And
And a gas supply member connected to the chamber and supplying the process gas to the inner space,
The first electrode member includes a first connection portion connected to the chamber; And
And a first distribution portion provided in a plate shape and formed with first distribution holes,
The second electrode member includes a second connection portion connected to the chamber; And
And a second distribution portion provided in a plate shape and formed with second distribution holes,
Wherein the first distribution portion is vertically connected to the first connection portion. chamber;
A support member positioned below the inner space of the chamber and supporting the substrate, the support member having a lower electrode;
A first electrode member positioned above the inner space;
A second electrode member positioned above the inner space and positioned below the first electrode; And
And a gas supply member connected to the chamber and supplying the process gas to the inner space,
The first electrode member includes a first connection portion connected to the chamber; And
And a first distribution portion provided in a plate shape and formed with first distribution holes,
The second electrode member includes a second connection portion connected to the chamber; And
And a second distribution portion provided in a plate shape and formed with second distribution holes,
And the second distribution portion is vertically connected to the second connection portion. 6. The method of claim 5,
A first elevating member positioned outside the chamber;
Further comprising: a first elevating rod located in a first elevating hole formed in the chamber and connecting the first elevating member and the first connecting portion,
And a groove-shaped first accommodating portion corresponding to a shape of an upper end of the first connecting portion is formed on an inner wall of the chamber. 6. The method of claim 5,
A second elevating member positioned outside the chamber;
And a second lifting rod located in a second lifting hole formed in the chamber and connecting the second lifting member and the second connecting portion,
And a groove-shaped second accommodating portion corresponding to a shape of an upper end of the second connecting portion is formed on an inner wall of the chamber. The method according to claim 1,
Wherein the gas supply member is connected to a first distribution space formed between the chamber and the first electrode member. Supplying a process gas to a first distribution space formed between a chamber and a first electrode member located in an inner space of the chamber;
Wherein the process gas is supplied to a second distribution space formed between the first electrode member and a second electrode member positioned below the first electrode member, Applying a voltage to the first electrode member and the second electrode member to excite the process gas to a plasma so that an electric field is formed in the member direction;
Supplying the process gas to the process space located below the second electrode member through the second electrode member, and processing the substrate to be supported by the support member. delete 15. The method of claim 14,
Wherein the voltage applied to the first electrode member or the second electrode member is adjusted to pass only electrons of a predetermined energy or more among electrons included in the process gas supplied to the process space through the second electrode member Way. 15. The method of claim 14,
And a negative voltage is applied to the second electrode member. 15. The method of claim 14,
Wherein a voltage is applied to a lower electrode included in the support member to form an electric field between the second electrode member and the support member. 19. The method of claim 18,
Wherein the voltage applied to the lower electrode is higher than the voltage applied to the second electrode member. 15. The method of claim 14,
Wherein the process gas is supplied to the chamber such that the flow forms a steady state flow. 21. The method of claim 20,
Wherein the process gas flows from the first distribution space to the second distribution space through first distribution holes formed in the first electrode member and flows through the second distribution holes formed in the second electrode member into the second distribution space To the process space. 22. The method of claim 21,
Wherein the second distribution holes are formed to have a smaller area than the upper area, and the process gas is accelerated in the process of flowing the second distribution holes. An electric field is formed in a direction from the first electrode member toward the second electrode member between a first electrode member positioned on the upper portion of the inner space of the chamber and a second electrode member positioned below the first electrode member, Exciting a process gas supplied between the first electrode member and the second electrode member with a plasma; And
An electric field is formed between the second electrode member and the support member which is positioned below the inner space and supports the substrate, and the electric field is applied to the process space between the second electrode member and the support member through the second electrode member And exposing the process gas to a plasma. 24. The method of claim 23,
Wherein an electric field is formed between the first electrode member and the second electrode member so as to face the second electrode member from the one electrode member.

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