KR101603565B1 - Developer Composition For Color Filter Image Sensor - Google Patents
Developer Composition For Color Filter Image Sensor Download PDFInfo
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- KR101603565B1 KR101603565B1 KR1020150128081A KR20150128081A KR101603565B1 KR 101603565 B1 KR101603565 B1 KR 101603565B1 KR 1020150128081 A KR1020150128081 A KR 1020150128081A KR 20150128081 A KR20150128081 A KR 20150128081A KR 101603565 B1 KR101603565 B1 KR 101603565B1
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- color filter
- image sensor
- formula
- developer composition
- nonionic surfactant
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- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- 239000001488 sodium phosphate Substances 0.000 claims description 3
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 5
- 239000003513 alkali Substances 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010907 mechanical stirring Methods 0.000 description 6
- 239000011342 resin composition Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000178 monomer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- QRIMLDXJAPZHJE-UHFFFAOYSA-N 2,3-dihydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(O)CO QRIMLDXJAPZHJE-UHFFFAOYSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- DFGKGUXTPFWHIX-UHFFFAOYSA-N 6-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]acetyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)C1=CC2=C(NC(O2)=O)C=C1 DFGKGUXTPFWHIX-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- UIUJIQZEACWQSV-UHFFFAOYSA-N succinic semialdehyde Chemical group OC(=O)CCC=O UIUJIQZEACWQSV-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Filters (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
본 발명은 잔사 제거성이 우수한 컬러필터 이미지 센서용 현상액 조성물에 관한 것이다.
The present invention relates to a developer composition for a color filter image sensor which is excellent in residue removal property.
이미지센서(Image Sensor)는 광학적 영상(Optical image)을 전기적 신호로 변환하여 디스플레이 장비에 표시하거나 저장할 수 있도록 하는 반도체 소자이다. 이미지센서의 적용 부분은 디지털 카메라, 휴대폰 카메라, 캠코더, 보안기기, 차량용 블랙박스, 의료기기 등 그 활용도가 광범위하여 수요가 기하급수적으로 증가하고 있다. An image sensor is a semiconductor device that converts an optical image into an electrical signal and displays or stores the electrical signal on a display device. Application areas of image sensors are increasing exponentially because of their wide use such as digital camera, mobile phone camera, camcorder, security device, car black box and medical device.
일반적으로 이미지센서는 크게 고체 촬상소자(Charge coupled device, CCD)와 상보성 금속 산화막 반도체 이미지센서(CMOS image sensor, CIS)의 두 가지로 나누어진다. 이미지센서는 복수의 픽셀들을 구비하고, 각각의 픽셀은 입사광에 상응하는 픽셀 신호를 출력한다. 이때, 복수의 픽셀들 각각은 포토다이오드로 대표되는 광전변환소자를 통해 입사광에 상응하는 광전하를 축적하고, 축적된 광전하에 기초하여 픽셀 신호를 출력한다.In general, image sensors are divided into two types: a charge coupled device (CCD) and a complementary metal oxide semiconductor (CMOS) image sensor (CIS). The image sensor has a plurality of pixels, and each pixel outputs a pixel signal corresponding to the incident light. At this time, each of the plurality of pixels accumulates light charges corresponding to the incident light through the photoelectric conversion elements represented by the photodiodes, and outputs the pixel signals based on the accumulated light charges.
고체 촬상소자(CCD) 또는 상보성 금속 산화물 반도체 이미지센서(CIS) 등에 이용되는 컬러 촬상소자는 그 수광 소자상에 적색(Red), 녹색(Green), 청색(Blue)의 덧셈 혼합 원색의 필터 세그먼트(Filter segment)를 구비하는 컬러필터(Color filter)를 각각 설치하고 색을 분해하는 것이 일반적이다. A color image pickup device used for a solid state image pickup device (CCD) or a complementary metal oxide semiconductor image sensor (CIS) has a filter segment of additive mixed primary color of red, green and blue on the light receiving element A color filter having a filter segment is installed and the color is decomposed.
최근 이러한 컬러 촬상소자에 장착되는 컬러필터의 패턴 크기는 2㎛ 이하의 크기로 기존 LCD용 컬러필터 패턴의 1/100 내지 1/200로 감소하였다. 이에 따라, 컬러 촬상소자에 장착되는 컬러필터는 해상도의 증가 및 잔사의 감소가 성능을 좌우하는 더욱 중요한 항목이 되었다. In recent years, the pattern size of a color filter mounted on such a color imaging device has been reduced to 1 / 100th to 1 / 200th of that of a color filter pattern for a conventional LCD. Thus, the color filter mounted on the color imaging device has become a more important item in which the performance is influenced by the increase of the resolution and the reduction of the residue.
따라서, 현상 시 잔사를 감소시킬 수 있는 물질을 함께 사용하여 현상액 조성물을 제공함으로써 잔사가 잔류하지 않도록 하는 개발이 필요한 실정이다.Therefore, there is a need to develop a method for preventing the residue from remaining by providing a developer composition using a material capable of reducing the residue during development.
상기와 같은 잔사 제거 성능 향상을 위한 기술로서, 대한민국등록특허공보 제1174082호 「안료 분산액 조성물, 이를 포함하는 컬러필터용 감광성 수지 조성물 및 이를 이용하여 제조되는 컬러필터」에는 (A) 안료; (B) 하기 화학식 1로 표시되는 단량체; (C) 하기 화학식 2로 표시되는 화합물을 포함하는 분산제; (D) 하기 화학식 3으로 표시되는 카도계 바인더 수지를 포함하는 바인더 수지; 및 (E) 용제를 포함하는 안료 분산액 조성물로서, 패턴의 잔사를 감소시킬 수 있고 해상도를 향상시킬 수 있는 안료 분산액 조성물, 이를 포함하는 컬러필터용 감광성 수지 조성물 및 이를 이용하여 제조되는 컬러필터가 개시되어 있다. 또한, 대한민국등록특허공보 제0904068호 「컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터」에는 (a) 아크릴계 수지, (b) 광중합성 단량체, (c) 광중합 개시제, (d) 안료, 및 (e) 용제를 포함하는 감광성 수지 조성물에 있어서, 상기 (a) 아크릴계 수지는 카르복시기 및 알콕시 4-옥소 부타노익산기를 갖는 에틸렌성 불포화 단량체를 반복단위로 포함하는 공중합체이고, 상기 (b) 광중합성 단량체는 하기 화학식 2의 구조를 갖는 글리세롤메타크릴레이트를 포함하여 이루어진 것인 컬러필터용 감광성 수지 조성물을 제공한다. 상기 컬러필터용 감광성 수지 조성물은 잔사 특성이 우수하고, 미세 픽셀 제조가 가능하여 고해상도용 컬러필터를 제조할 수 있는 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터가 개시되어 있다.
As a technique for improving the residue removal performance as described above, Korean Patent Registration No. 1174082 entitled " Pigment dispersion composition, photosensitive resin composition for color filter comprising the same, and color filter manufactured using the same, " (B) a monomer represented by the following formula (1); (C) a dispersant comprising a compound represented by the following formula (2); (D) a binder resin comprising a cationic binder resin represented by the following formula (3); And (E) a solvent, which can reduce the residue of a pattern and improve the resolution, a photosensitive resin composition for a color filter comprising the same, and a color filter manufactured using the composition. . Korean Patent Registration No. 0904068 " Photosensitive resin composition for color filter and color filter using the same " discloses a photosensitive resin composition for a color filter which comprises (a) an acrylic resin, (b) a photopolymerizable monomer, (c) a photopolymerization initiator, (A) the acrylic resin is a copolymer containing as a repeating unit an ethylenic unsaturated monomer having a carboxyl group and an alkoxy 4-oxobutanoate group, and (b) the photopolymerizable monomer Wherein the photosensitive resin composition comprises a glycerol methacrylate having a structure represented by the following formula (2). A photosensitive resin composition for a color filter and a color filter using the same, which can produce a high-resolution color filter with excellent residue characteristics and capable of producing fine pixels, are disclosed.
본 발명의 목적은 현상 후 기판 상에 포토레지스트 잔사가 남지 않으면서 보다 균일하게 패턴을 형성할 수 있는 현상력이 우수한 컬러필터 이미지 센서용 현상액 조성물을 제공하는데 있다.
It is an object of the present invention to provide a developer composition for a color filter image sensor which is excellent in developing ability to form a pattern more uniformly without leaving a photoresist residue on a substrate after development.
상기 목적을 달성하기 위하여, 본 발명은 하기 화학식 1로 표시되는 수용성 폴리머; 하기 화학식 2 또는 화학식 3으로 표시되는 1종 이상의 비이온성 계면활성제; 및 알카리 화합물을 포함하는 것을 특징으로 하는 컬러필터 이미지 센서용 현상액 조성물을 제공한다.In order to achieve the above object, the present invention provides a water-soluble polymer represented by the following formula (1): At least one nonionic surfactant represented by the following formula (2) or (3); And an alkaline compound. The present invention also provides a developer composition for a color filter image sensor.
[화학식 1][Chemical Formula 1]
상기 화학식 1에서, n은 1 내지 50의 정수이다.
In Formula 1, n is an integer of 1 to 50.
[화학식 2](2)
상기 화학식 2에서, R은 H 또는 OH이고, x, y, z는 각각 0 내지 100 중에서 선택되는 정수이다.
In Formula 2, R is H or OH, and x, y, and z are each an integer selected from 0 to 100.
[화학식 3](3)
상기 화학식 3에서, w, x, y, z는 각각 0 내지 20 중에서 선택되는 정수이다. In Formula 3, w, x, y, and z are integers selected from 0 to 20, respectively.
본 발명의 바람직한 일 구현예에서, 상기 알카리 화합물은 테트라에틸 암모늄 하이드록사이드, 테트라메틸 암모늄 하이드록사이드, 테트라부틸 암모늄 하이드록사이드, 수산화칼륨, 수산화나트륨, 인산나트륨, 규산나트륨, 탄산나트륨, 탄산수소나트륨으로 이루어진 군으로부터 선택되는 1종 이상인 것을 특징으로 한다.In one preferred embodiment of the present invention, the alkaline compound is selected from the group consisting of tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, potassium hydroxide, sodium hydroxide, sodium phosphate, sodium silicate, Sodium, and the like.
본 발명의 바람직한 일 구현예에서, 상기 조성물은 조성물 총 중량에 대하여, 수용성 폴리머 0.1 내지 5 중량%, 비이온성 계면활성제 0.01 내지 5 중량%, 알카리 화합물 0.1 내지 5 중량% 및 나머지는 탈이온수를 포함하는 것을 특징으로 한다.In one preferred embodiment of the invention, the composition comprises, based on the total weight of the composition, from 0.1 to 5% by weight of a water-soluble polymer, from 0.01 to 5% by weight of a nonionic surfactant, from 0.1 to 5% by weight of an alkaline compound, .
본 발명의 바람직한 일 구현예에서 상기 컬러필터 이미지 센서용 현상액 조성물을 이용하여 제조된 컬러필터를 제공한다.In a preferred embodiment of the present invention, a color filter manufactured using the developer composition for the color filter image sensor is provided.
본 발명의 바람직한 일 구현예에서 상기 컬러필터를 포함하는 이미지센서를 제공한다.
According to a preferred embodiment of the present invention, there is provided an image sensor including the color filter.
본 발명에 따른 컬러필터 이미지 센서용 현상액 조성물은 현상 후 기판 상에 포토레지스트 잔사가 남지 않으면서 보다 균일하게 패턴을 형성할 수 있는 효과가 있다. The developer composition for a color filter image sensor according to the present invention is capable of forming a pattern more uniformly without leaving a photoresist residue on a substrate after development.
다른 식으로 정의되지 않는 한, 본 명세서에서 사용된 모든 기술적 및 과학적 용어들은 본 발명이 속하는 기술분야에서 숙련된 전문가에 의해서 통상적으로 이해되는 것과 동일한 의미를 가진다. 일반적으로, 본 명세서에서 사용된 명명법 은 본 기술분야에서 잘 알려져 있고 통상적으로 사용되는 것이다.Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In general, the nomenclature used herein is well known and commonly used in the art.
본원 명세서 전체에서, 어떤 부분이 어떤 구성 요소를 "포함" 한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성 요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다. Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise.
본 발명에서 '포토레지스트(Photoresist)'라 함은 고분자와 감광제가 섞인 혼합물로 빛에 의해 그 화학적인 성질이 변화하여 어떤 파장의 빛에 노출시키면 특정 용매에 대한 용해도가 바뀌게 되는데, 그 용매에 대한 노광부와 비노광부의 용해 속도에 차이가 나서 일정 시간의 용해 시간이 지나면 미쳐 다 녹지 않은 부분이 남아 패턴 형성이 되는 것을 의미한다.In the present invention, 'photoresist' is a mixture of a polymer and a photosensitizer, and its chemical properties are changed by light. When the polymer is exposed to light of a certain wavelength, the solubility of the polymer in a specific solvent is changed. The dissolution rate of the exposed part and the non-exposed part is different, and when the dissolving time is over a certain time, it means that the part which is insoluble and insoluble remains to form the pattern.
본 발명에서 '컬러필터(Color filter)'라 함은 디지털 카메라, 휴대폰 카메라 등에 적용되는 CMOS 이미지 센서 등에서 색상을 표현하는 핵심부품인 것을 의미한다.In the present invention, 'color filter' refers to a key component for expressing color in a CMOS image sensor or the like applied to a digital camera, a mobile phone camera, or the like.
본 발명에서 '이미지센서((Image Sensor)라 함은 광학적 영상(Optical image)을 전기적 신호로 변환하여 디스플레이 장비에 표시하거나 저장할 수 있도록 하는 반도체 소자를 의미한다.In the present invention, the term 'image sensor' refers to a semiconductor device that converts an optical image into an electrical signal and displays or stores the electrical signal on a display device.
본 발명에서 '웨이퍼(Wafer)'라 함은 반도체 집적회로를 만드는데 사용하는 주요 재료가 되는 얇은 원판, 즉 실리콘이나 갈륨비소 등 단결정(單結晶) 막대기를 얇게 썬 둥근 판을 의미한다.
In the present invention, the term 'wafer' refers to a thin circular plate that is a main material used for making a semiconductor integrated circuit, that is, a thin plate of thin single crystals such as silicon or gallium arsenide.
본 발명의 일 구현예는, 하기 화학식 1로 표시되는 수용성 폴리머; 하기 화학식 2 또는 화학식 3으로 표시되는 1종 이상의 비이온성 계면활성제; 및 알카리 화합물을 포함하는 것을 특징으로 하는 컬러필터 이미지 센서용 현상액 조성물을 제공하는 것이다.An embodiment of the present invention relates to a water-soluble polymer represented by the following formula (1); At least one nonionic surfactant represented by the following formula (2) or (3); And an alkaline compound. The present invention also provides a developer composition for a color filter image sensor.
[화학식 1][Chemical Formula 1]
상기 화학식 1에서, n은 1 내지 50의 정수이다.
In Formula 1, n is an integer of 1 to 50.
[화학식 2](2)
상기 화학식 2에서, R은 H 또는 OH이고, x, y, z는 각각 0 내지 100 중에서 선택되는 정수이다.
In Formula 2, R is H or OH, and x, y, and z are each an integer selected from 0 to 100.
[화학식 3](3)
상기 화학식 3에서, w, x, y, z는 각각 0 내지 20 중에서 선택되는 정수이다. In Formula 3, w, x, y, and z are integers selected from 0 to 20, respectively.
상기 조성물은 조성물 총 중량에 대하여, 수용성 폴리머 0.1 내지 5 중량%, 비이온성 계면활성제 0.01 내지 5 중량%, 알카리 화합물 0.1 내지 5 중량% 및 나머지는 탈이온수를 포함하는 것일 수 있다.The composition may comprise 0.1 to 5 wt% of a water-soluble polymer, 0.01 to 5 wt% of a nonionic surfactant, 0.1 to 5 wt% of an alkaline compound, and the remainder in deionized water, based on the total weight of the composition.
상기 수용성 폴리머는 조성물 총 중량에 대하여, 0.1 내지 5 중량%를 포함하는 것이 바람직하다. 만일, 상기 수용성 폴리머를 0.1 중량% 미만으로 사용할 경우에는 현상 잔류물이 생기고, 5 중량%을 초과하여 사용할 경우에는 현상 속도가 현저히 느려지기 때문에 바람직하지 않다.The water-soluble polymer preferably comprises 0.1 to 5% by weight based on the total weight of the composition. If the water-soluble polymer is used in an amount of less than 0.1% by weight, development residues are produced. When the water-soluble polymer is used in an amount of more than 5% by weight, the development speed is significantly lowered.
상기 비이온성 계면활성제는 조성물 총 중량에 대하여, 0.01 내지 5 중량%를 포함하는 것이 바람직하다. 만일, 상기 비이온성 계면활성제를 0.01 중량% 미만으로 사용할 경우에는 현상 잔류물이 생기고, 5 중량%을 초과하여 사용할 경우에는 현상 속도가 급격히 빨라져서 원하는 모양의 패턴이 형성되지 않을 우려가 있기 때문에 바람직하지 않다.The nonionic surfactant preferably comprises 0.01 to 5% by weight based on the total weight of the composition. If the nonionic surfactant is used in an amount of less than 0.01% by weight, development residue may be formed. If the nonionic surfactant is used in an amount exceeding 5% by weight, the development speed may rapidly increase and a desired pattern may not be formed. not.
상기 알카리 화합물은 테트라에틸 암모늄 하이드록사이드, 테트라메틸 암모늄 하이드록사이드, 테트라부틸 암모늄 하이드록사이드, 수산화칼륨, 수산화나트륨, 인산나트륨, 규산나트륨, 탄산나트륨, 탄산수소나트륨으로 이루어진 군으로부터 선택되는 1종 이상인 것일 수 있다.The alkaline compound may be at least one selected from the group consisting of tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, potassium hydroxide, sodium hydroxide, sodium phosphate, sodium silicate, sodium carbonate, sodium hydrogen carbonate Or more.
또한, 알카리 화합물은 조성물 총 중량에 대하여, 0.1 내지 5 중량%를 포함하는 것이 바람직하다. 만일, 상기 알카리 화합물을 0.1 중량% 미만으로 사용할 경우에는 현상이 제대로 이루어지지 않고, 5 중량%을 초과하여 사용할 경우에는 현상속도가 너무 빨라서 패턴이 붕괴될 위험 때문에 바람직하지 않다.Further, it is preferable that the alkaline compound contains 0.1 to 5% by weight based on the total weight of the composition. If the alkaline compound is used in an amount less than 0.1% by weight, the development is not properly performed. If the alkaline compound is used in an amount exceeding 5% by weight, the development speed is too high and the pattern is disadvantageous.
전술된 바와 같이, 본 발명으로부터 제공되는 본 발명의 컬러필터 이미지 센서용 현상액 조성물은 화학식 1로 표시되는 수용성 폴리머, 화학식 2 또는 화학식 3으로 표시되는 1종 이상의 비이온성 계면활성제 및 알카리 화합물을 모두 포함하여 이루어짐으로써, 현상 후 기판 상에 포토레지스트 잔사가 남지 않으면서 현상력이 우수한 현상액 조성물을 제공할 수 있다.As described above, the developer composition for a color filter image sensor of the present invention provided from the present invention includes both the water-soluble polymer represented by the formula (1), the at least one nonionic surfactant represented by the formula (2) It is possible to provide a developer composition which is excellent in developing performance without leaving a photoresist residue on the substrate after development.
본 발명의 또 다른 일 구현예는 상기 컬러필터 이미지 센서용 현상액 조성물을 이용하여 제조된 컬러필터에 적용할 수 있으며, 상기 컬러필터를 포함하는 이미지센서에도 적용되는 것일 수 있다. 상기 컬러필터 이미지 센서용 현상액 조성물을 이용하여 제조된 컬러필터의 수득 공정의 일예는 다음과 같다. 먼저, 이미지센서 컬러필터 용 레지스트를 웨이퍼 위에 스핀 도포, 슬릿 도포 등의 적당한 방법을 이용하여 도포한다. 레지스트 도포 후에는 이미지센서용 컬러필터에 필요한 패턴을 형성하도록 광을 조사하고 적당한 온도로 베이크를 진행한다. 광 조사후 이미지 센서용 현상액 조성물을 이용하여 현상과정을 진행한다. 상기와 같이 광을 조사하면 도포층의 미조사 부분이 용해되고 이미지 컬러필터에 필요한 패턴이 형성된다. 이러한 과정을 필요한 적색(Red), 녹색(Green), 청색(Blue)의 수에 따라 반복 수행함으로써, 원하는 패턴을 갖는 이미지센서 컬러필터를 수득하는 것일 수 있다.
Another embodiment of the present invention may be applied to a color filter manufactured using the developer composition for the color filter image sensor, and may be applied to an image sensor including the color filter. An example of a process for obtaining a color filter manufactured using the developer composition for a color filter image sensor is as follows. First, a resist for an image sensor color filter is applied onto a wafer by a suitable method such as spin coating or slit coating. After the application of the resist, light is irradiated to form a pattern necessary for a color filter for an image sensor, and baking is carried out at an appropriate temperature. After the light irradiation, the development process is performed using the developer composition for an image sensor. When the light is irradiated as described above, the unexposed portions of the coating layer are dissolved and a pattern necessary for the image color filter is formed. By repeating this process according to the required number of red, green and blue colors, it is possible to obtain an image sensor color filter having a desired pattern.
[실시예][Example]
이하, 실시예를 통하여 본 발명을 더욱 상세히 설명하고자 한다. 이들 실시예는 오로지 본 발명을 예시하기 위한 것으로, 본 발명의 범위가 이들 실시예에 의해 제한되는 것으로 해석되지 않는 것은 당업계에서 통상의 지식을 가진 자에게 있어서 자명할 것이다.
Hereinafter, the present invention will be described in more detail with reference to Examples. It is to be understood by those skilled in the art that these embodiments are only for illustrating the present invention and that the scope of the present invention is not construed as being limited by these embodiments.
실시예 1Example 1
200mL 플라스크에 화학식 1에서 n=20인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=9, z=0인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수(DI) 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였다.3 g of a nonionic surfactant with R = H, x = 12, y = 9 and z = 0 in formula (2), 3 g of a water-soluble polymer with n = 20 in formula 0.8 g of a nonionic surfactant with y = 4 and z = 4 and 2 g of tetramethylammonium hydroxide as an alkaline compound were charged with 91.2 g of deionized water (DI) and mechanically stirred for 12 hours, Mu] m, 0.02 [mu] m filter diameter to prepare a developer composition.
다음과 같은 처리 공정을 진행하여 칼라필터 포토레지스트 패턴이 있는 웨이퍼를 스핀 방식으로 처리하여 잔사 제거성을 확인하였다.The wafer having the color filter photoresist pattern was treated by a spin method to confirm the residue removal property.
칼라필터 현상 공정은 실리콘 웨이퍼에 스핀코터를 이용하여 유기막을 코팅하고 200℃로 5분간 베이크를 실시한 후 칼라필터 포토레지스트를 코팅하고 100℃로 3분간 베이크를 실시하였다. 이후에 100mJ/cm2의 노광량으로 노광한 다음 25℃에서 1분간 테스트액으로 현상 후 탈이온수(DI)로 세정한 다음 스핀 방식으로 건조 후에 200℃로 5분간 하드베이크를 실시하였다. 이를 CD-SEM(Hitachi S-8820 series)으로 측정한 결과, 잔사가 모두 제거된 칼라필터 포토레지스트 패턴을 형성하였다.
In the color filter development process, an organic film was coated on a silicon wafer using a spin coater, baked at 200 ° C for 5 minutes, coated with a color filter photoresist, and baked at 100 ° C for 3 minutes. Thereafter, the wafer was exposed to light at an exposure dose of 100 mJ / cm 2 , washed with deionized water (DI) at 25 ° C for 1 minute, washed with deionized water (DI), dried by a spin method and then hard baked at 200 ° C for 5 minutes. As a result of measuring with a CD-SEM (Hitachi S-8820 series), a color filter photoresist pattern was formed in which all the residue was removed.
실시예 2Example 2
200mL 플라스크에 화학식 1에서 n=10인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=9, z=0인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a nonionic surfactant having R = H, x = 12, y = 9 and z = 0 in the formula (2), 3 g of a water- 0.8 g of nonionic surfactant with y = 4 and z = 4, and 91.2 g of deionized water were added to 2 g of tetramethylammonium hydroxide as an alkaline compound. After mechanical stirring for 12 hours, 0.1, 0.05, and 0.02 The solution was filtered in three stages using a filter having a diameter of 쨉 m to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
실시예 3Example 3
200mL 플라스크에 화학식 1에서 n=30인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=7, z=0인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a nonionic surfactant having R = H, x = 12, y = 7 and z = 0 in formula (2), 3 g of a water-soluble polymer having n = 30 in formula 0.8 g of nonionic surfactant with y = 4 and z = 4, and 91.2 g of deionized water were added to 2 g of tetramethylammonium hydroxide as an alkaline compound. After mechanical stirring for 12 hours, 0.1, 0.05, and 0.02 The solution was filtered in three stages using a filter having a diameter of 쨉 m to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
실시예 4Example 4
200mL 플라스크에 화학식 1에서 n=40인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=9, z=0인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a water-soluble polymer having n = 40 in the formula (1), 3 g of a nonionic surfactant having R = H, x = 12, y = 9 and z = 0 in the formula (2), w = 6, x = 0.8 g of nonionic surfactant with y = 4 and z = 4, and 91.2 g of deionized water were added to 2 g of tetramethylammonium hydroxide as an alkaline compound. After mechanical stirring for 12 hours, 0.1, 0.05, and 0.02 The solution was filtered in three stages using a filter having a diameter of 쨉 m to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
실시예 5Example 5
200mL 플라스크에 화학식 1에서 n=50인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=9, z=0인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a nonionic surfactant having R = H, x = 12, y = 9 and z = 0 in formula (2), 3 g of a water-soluble polymer having n = 50 in formula 0.8 g of nonionic surfactant with y = 4 and z = 4, and 91.2 g of deionized water were added to 2 g of tetramethylammonium hydroxide as an alkaline compound. After mechanical stirring for 12 hours, 0.1, 0.05, and 0.02 The solution was filtered in three stages using a filter having a diameter of 쨉 m to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
실시예 6Example 6
200mL 플라스크에 화학식 1에서 n=20인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=7, z=0인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a nonionic surfactant having R = H, x = 12, y = 7 and z = 0 in the formula (2), 3 g of a water- 0.8 g of nonionic surfactant with y = 4 and z = 4, and 91.2 g of deionized water were added to 2 g of tetramethylammonium hydroxide as an alkaline compound. After mechanical stirring for 12 hours, 0.1, 0.05, and 0.02 The solution was filtered in three stages using a filter having a diameter of 쨉 m to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
실시예 7Example 7
200mL 플라스크에 화학식 1에서 n=20인 수용성 폴리머 3g, 화학식 2에서 R=H, x=12, y=9, z=1인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 91.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
In a 200 ml flask, 3 g of a water-soluble polymer having n = 20 in formula (1), 3 g of a nonionic surfactant having R = H, x = 12, y = 9 and z = 1 in formula (2) 0.8 g of nonionic surfactant with y = 4 and z = 4, and 91.2 g of deionized water were added to 2 g of tetramethylammonium hydroxide as an alkaline compound. After mechanical stirring for 12 hours, 0.1, 0.05, and 0.02 The solution was filtered in three stages using a filter having a diameter of 쨉 m to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
비교예 1Comparative Example 1
실시예 1에서 화학식 1의 수용성 폴리머와 화확식 2 및 3의 비이온성 계면활성제를 제외하고, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g을 사용하여 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
The wafers were treated in the same manner as in Example 1 except that 2 g of tetramethylammonium hydroxide was used as an alkaline compound except for the water-soluble polymer of Chemical Formula 1 and the nonionic surfactants of Chemical Formula 2 and 3 in Example 1 And the residue removability was confirmed.
비교예 2Comparative Example 2
실시예 1에서 화학식 1의 수용성 폴리머를 제외하고, 화학식 2에서 R=H, x=12, y=9, z=1인 비이온성 계면활성제 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 94.2g을 투입하고 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a nonionic surfactant having R = H, x = 12, y = 9 and z = 1 in the formula (2) except for the water-soluble polymer of the formula (1) in Example 1, w = 6, x = 6, y = 4, z = 4, and 2 g of tetramethylammonium hydroxide as an alkaline compound were charged with 94.2 g of deionized water, mechanically stirred for 12 hours, and then filtered through 0.1 μm, 0.05 μm and 0.02 μm filtration And filtered through three stages using a filter having a diameter to prepare a developer composition. The wafers were treated in the same manner as in Example 1 to confirm the residue removability.
비교예 3Comparative Example 3
실시예 1에서 화학식 2의 비이온성 계면활성제를 제외하고, 화학식 1에서 n=20인 수용성 폴리머 3g, 화학식 3에서 w=6, x=6, y=4, z=4인 비이온성 계면활성제 0.8g, 알카리 화합물로서 테트라메틸 암모늄 하이드록사이드 2g에 탈이온수 97.2g을 투입하고, 12시간 동안 기계 교반을 실시한 후 각각 0.1㎛, 0.05㎛, 0.02㎛ 여과직경을 가진 여과기를 이용하여 3단으로 여과하여 현상액 조성물을 제조하였고, 실시예 1과 같은 방법과 동일하게 웨이퍼를 처리하여 잔사 제거성을 확인하였다.
3 g of a water-soluble polymer having n = 20 in Chemical Formula 1 and 3 g of nonionic surfactant w = 6, x = 6, y = 4 and z = 4 in Chemical Formula 3, except for the nonionic surfactant of Chemical Formula 2, and 97.2 g of deionized water was added to 2 g of tetramethylammonium hydroxide as an alkaline compound. The mixture was mechanically stirred for 12 hours, and then filtered in three stages using a filter having a filtration diameter of 0.1 탆, 0.05 탆 and 0.02 탆, respectively To prepare a developer composition. The wafer was treated in the same manner as in Example 1 to confirm the residue removability.
특성 측정Characterization
상기 실시예 1 내지 7 및 비교예 1 내지 3에 대한 잔사 제거성을 측정하였다. 잔사 제거성은 CD-SEM(Hitachi S-8820 series)을 이용하여 측정하였다. 결과값에 대한 기준은 다음과 같다.The residue removability of the above Examples 1 to 7 and Comparative Examples 1 to 3 was measured. The residue removability was measured using CD-SEM (Hitachi S-8820 series). The criteria for the result are as follows.
<잔사 제거성><Residue Removability>
1. 매우 나쁨: 30% 이하 제거됨1. Very poor: less than 30% removed
2. 불량: 50% 제거됨2. Defective: 50% removed
3. 보통: 70% 제거됨3. Medium: 70% removed
4. 좋음: 80% 제거됨4. Good: 80% removed
5. 매우 좋음: 90% 이상 제거됨
5. Very good: Over 90% removed
이와 같이 측정한 결과를 하기 표 1에 나타내었다. The results thus obtained are shown in Table 1 below.
상기와 표 1에서 확인할 수 있듯이, 실시예 1 내지 7은 비교예 1 내지 3 대비 잔사 제거성이 우수하였고, 비교예 1 내지 3은 잔사 제거성이 불량이거나 매우 나쁨을 확인할 수 있었다.As can be seen from the above and Table 1, Examples 1 to 7 were excellent in the removability of residues compared to Comparative Examples 1 to 3, and Comparative Examples 1 to 3 were found to be poor in residue removal or very poor.
결과적으로, 본 발명의 컬러필터 이미지 센서용 현상액 조성물을 최적의 함량으로 모두 포함할 경우, 현상 후 기판 상에 포토레지스트 잔사가 남지 않으면서 현상력이 우수한 현상액 조성물을 제공할 수 있다는 것을 확인하였다.
As a result, it has been confirmed that when the developer composition for a color filter image sensor of the present invention is included in an optimum amount, a developer composition excellent in developing power can be provided without leaving a photoresist residue on the substrate after development.
본 발명의 단순한 변형 또는 변경은 모두 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
하기 화학식 2 또는 화학식 3으로 표시되는 1종 이상의 비이온성 계면활성제; 및
알카리 화합물을 포함하는 것을 특징으로 하는 컬러필터 이미지 센서용 현상액 조성물.
[화학식 1]
상기 화학식 1에서, n은 1 내지 50의 정수이다.
[화학식 2]
상기 화학식 2에서, R은 H 또는 OH이고, x, y, z는 각각 0 내지 100 중에서 선택되는 정수이되, x, y, z 중 선택되는 어느 하나가 0일 경우, 나머지는 1 내지 100중에서 선택되는 정수이다.
[화학식 3]
상기 화학식 3에서, w, x, y, z는 각각 0 내지 20 중에서 선택되는 정수이다.
A water-soluble polymer represented by the following formula (1);
At least one nonionic surfactant represented by the following formula (2) or (3); And
A developer composition for a color filter image sensor, comprising an alkaline compound.
[Chemical Formula 1]
In Formula 1, n is an integer of 1 to 50.
(2)
In Formula 2, R is H or OH, x, y, and z are integers selected from 0 to 100, and when any one of x, y, and z is 0, the remaining is selected from 1 to 100 Lt; / RTI >
(3)
In Formula 3, w, x, y, and z are integers selected from 0 to 20, respectively.
The method of claim 1, wherein the alkaline compound is selected from the group consisting of tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, potassium hydroxide, sodium hydroxide, sodium phosphate, sodium silicate, sodium carbonate, Wherein the color filter image sensor is at least one member selected from the group consisting of the following.
The composition according to claim 1, wherein the composition comprises 0.1 to 5% by weight of a water-soluble polymer, 0.01 to 5% by weight of a nonionic surfactant, 0.1 to 5% by weight of an alkaline compound, ≪ / RTI > for a color filter image sensor.
A color filter produced using the developer composition for a color filter image sensor of any one of claims 1 to 3.
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WO2018190529A1 (en) * | 2017-04-10 | 2018-10-18 | 영창케미칼 주식회사 | Euv developer composition for forming photosensitive photoresist micropattern |
CN110476127A (en) * | 2017-04-10 | 2019-11-19 | 荣昌化学制品株式会社 | EUV photonasty photoresist fine pattern formation developer composition |
US11169442B2 (en) | 2017-04-10 | 2021-11-09 | Young Chang Chemical Co., Ltd | EUV developer composition for forming photosensitive photoresist micropattern |
CN110476127B (en) * | 2017-04-10 | 2022-11-01 | 荣昌化学制品株式会社 | Developer composition for forming photosensitive photoresist fine pattern for EUV |
Also Published As
Publication number | Publication date |
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WO2017043788A1 (en) | 2017-03-16 |
JP2018527618A (en) | 2018-09-20 |
CN108027569B (en) | 2020-12-29 |
JP6567765B2 (en) | 2019-08-28 |
CN108027569A (en) | 2018-05-11 |
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