KR101593305B1 - Method, apparatus for detecting reason for leak fault in plasma etching and plasma etching device using the same - Google Patents

Abstract

A method and apparatus for detecting a cause of leakage in a plasma etching process, and a plasma etching apparatus using the same are provided. A method for detecting a cause of a leak in a plasma etching process according to the present invention includes the steps of generating optical analysis data for a first gas injected into a plasma production chamber during the etching process, Determining a source of the second gas present in the chamber based on the result of the quantitative analysis of the second gas, And is a gas species introduced into the plasma production chamber due to the leak when injected.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for detecting a cause of a leak in a plasma etching process, and a plasma etching apparatus using the same.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method and apparatus for detecting a cause of a leak in a plasma etching process and a plasma etching apparatus using the same, and more particularly, to a plasma etching apparatus using an optical emission spectroscopy (OES) To a technique for detecting a cause of leak.

Generally, the manufacturing process of a semiconductor integrated circuit is composed of various unit processes such as a cleaning process, an ion implantation process, a photolithography process, a deposition process, an etching process, and a chemical mechanical polishing process.

BACKGROUND OF THE INVENTION [0002] Plasma processing technology in the process of manufacturing a semiconductor integrated circuit is an essential technique for manufacturing a fine semiconductor integrated circuit. Typical unit processing techniques using plasma include dry etching and dry deposition.

Among them, dry etching is one of the most important processes in semiconductor patterning by using low temperature plasma at low pressure (<50 mTorr), and it is one of the most important processes in high density (10 mTorr) plasma is used for improved etch results and higher yields.

The low pressure in these high-density plasma processes increases the mean free path, ie the distance that particles can move from the moment they collide with other particles to the time of the next collision, Which allows for anisotropic etching of higher aspect ratios.

However, the plasma process using low pressure as described above is very sensitive to a small amount of gas, and a small chamber leak introduces an undesirable gas species into the chamber, thereby adversely affecting the gas purity and the plasma process I can go crazy.

Accordingly, a method of detecting gas species present in the plasma chamber by using optical emission spectroscopy (OES) has been proposed, but it is possible to detect the source of the leak, which is a cause of the gas species, There is a problem that it can not present the source of the improper process and the solution to solve it.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and a method of detecting a cause of a leak in a plasma etching process is proposed.

According to an aspect of the present invention, there is provided a method of detecting a cause of a leak in a plasma etching process, the method comprising the steps of: analyzing optical analysis data for a first gas injected into a plasma production chamber during the etching process; Determining a source of the second gas present in the chamber based on the quantitative analysis of the second gas from the optical analysis data and the result of the quantitative analysis of the second gas, And the second gas is a gas species introduced into the plasma production chamber due to the leak when the first gas is injected.

In order to accomplish the above object, an apparatus for detecting the cause of a leak in a plasma etching process according to an embodiment of the present invention may include an optical analyzing unit for analyzing a first gas injected into the plasma production chamber during the etching process, Based on the result of the quantitative analysis of the second gas, and a second analysis section for analyzing the second gas existing in the plasma production chamber, based on the result of the quantitative analysis of the second gas, Wherein the second gas is a gas species introduced into the plasma production chamber due to the leak when the first gas is injected.

In order to achieve the above object, an apparatus for performing a plasma etching process according to an embodiment of the present invention includes a gas supply unit for injecting gas into a plasma production chamber, a plasma generation unit for generating plasma, And a leakage cause detecting unit for detecting a leakage cause of the etching process by monitoring the gas injected into the production chamber, wherein the leakage cause detecting unit is configured to detect an optical characteristic of the first gas injected into the plasma production chamber during the etching process And performing quantitative analysis of the second gas from the optical analysis data by using the result of quantitative analysis of the second gas and an actinometry using an inert gas species, Determining the cause of the inflow of the second gas, The method comprising: dividing a wavelength of the second gas to a specific wavelength of an active gas species and analyzing fluctuation of a light emission intensity at a specific wavelength of the second gas to determine whether the instability fluctuates; Determining the instability of injection of the first gas by analyzing the light emission intensity of the first gas at a specific wavelength and determining the cause of the inflow of the second gas corresponding to the instability variation of the injection of the first gas .

According to an embodiment of the present invention, it is possible to shorten the time for analyzing the cause of process defects by finding the source of the leak, thereby contributing to an increase in the process production amount.

In addition, it is possible to detect the source of nitrogen injection, which is the cause of the etching rate reduction in the plasma etching process.

It should be understood that the effects of the present invention are not limited to the above effects and include all effects that can be deduced from the detailed description of the present invention or the composition of the invention described in the claims.

1 is a view illustrating a plasma etching apparatus for a plasma etching process according to an embodiment of the present invention.
2 is a block diagram showing the configuration of a leakage cause detecting apparatus according to an embodiment of the present invention.
3 is a flowchart illustrating a process of detecting a cause of a leak in a plasma etching process according to an embodiment of the present invention.
4 to 8 are graphs showing experimental results (OES data) for detecting the etch rate reduction cause of the etching process according to the embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "indirectly connected" .

Also, when an element is referred to as "comprising ", it means that it can include other elements, not excluding other elements unless specifically stated otherwise.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view illustrating a plasma etching apparatus for a plasma etching process according to an embodiment of the present invention.

For reference, in order to obtain etch rate, selectivity and uniformity in a plasma etching process, it is necessary to control various main parameters such as plasma related variables and surface related variables It can be divided into two kinds.

First, the plasma related parameters include RF power, frequency, gas, pressure, and shape and material of vacuum equipment.

Here, RF power and frequency can directly affect the plasma by determining the strength and direction of the electromagnetic field, and the shape of the gas, pressure, and vacuum equipment can determine the number of molecules exposed to the plasma, The shape and material are related to the formation of the electromagnetic field.

The surface-related variables are temperature, voltage, and chemical reactivity.

Here, the voltage is interlocked with the electromagnetic field, the temperature can affect all the reactivity variables, and the reactivity varies according to the material, so it is necessary to select the correct parameter for each material.

The plasma etching apparatus shown in FIG. 1 is an ICP (Inductively Coupled Plasma) - RIE (Reactive Ion Etch) apparatus, which is an apparatus for detecting the cause of a leak as shown in FIG. 1 (Hereinafter referred to as &quot; device &quot;) 100.

Here, the leak detecting apparatus 100 may include an optical emission spectroscopy (hereinafter, referred to as 'OES') apparatus. In the plasma etching process, a spectrum of a gas generated due to a plasma reaction is analyzed in real time, It is possible to detect the cause of the leak in which the undesirable gaseous material flows.

For example, when nitrogen (N ₂ ) is introduced into a plasma production chamber (hereinafter referred to as a chamber) during an etching process using a chlorine (Cl ₂ ) gas, the etch rate of the etching can be significantly reduced The leak detection apparatus 100 generates optical analysis data on the chlorine (Cl ₂ ) gas injected into the chamber and performs quantitative analysis on the amount of nitrogen (N ₂ ) from the optical analysis data to obtain nitrogen ₂ ) can be determined.

Here, "optical analysis data" may be an OES data including wavelength and piecewise optical intensity of each wavelength of the gas present in the chamber, and the chlorine in order to observe the flows of nitrogen (N ₂₎ gas (Cl ₂ ) In addition to the gas, one or more gases such as nitrogen (N ₂ ) and argon (Ar) can be injected.

At this time, the leak source detection apparatus 100 is an inert gas species (e.g., argon (Ar)), without having to determine the inflow source of nitrogen (N ₂₎ only by a simple numerical comparison of the amount of nitrogen (N ₂₎ using the OES data (Actinometry) can be applied.

That is, nitrogen in a particular wavelength of an inert gas species (N ₂₎ divides the wavelength of the gas, by the result analyzing the nitrogen (N ₂₎ variations in the light emission intensity of a specific wavelength of the gas in the chlorine (Cl ₂₎ when the gas injection Any one of several possibilities that nitrogen (N ₂ ) gas may be introduced can be determined as the cause of the leak.

For reference, the cause of the leakage may include at least one of leakage of the chamber due to O-ring wear, malfunction of an MFC (Mass Flow Controller) for controlling the amount of gas injected, and leaning of gas.

To summarize, in order to detect a second gas which is an undesirable gas introduced during the plasma etching process, at least one first gas which is a process gas is injected and the second gas is detected from the OES data for the first gas The second gas is quantitatively analyzed and actinometry using an inert gas species is applied to detect a first gas having a possibility of entering the second gas when the gas is injected into the chamber, By analyzing the light emission intensity at a specific wavelength of the detected first gas, it is possible to determine the cause of the leakage of the second gas into the first gas injection.

Hereinafter, the case of detecting the cause of the leak that reduces the etching rate in the plasma etching process, that is, the cause of the introduction of the nitrogen (N ₂ ) gas, using the leak detecting apparatus 100 will be described. Will be described later with reference to Figs. 4 to 8. Fig.

FIG. 2 is a block diagram showing the configuration of a leak detection apparatus 100 according to an embodiment of the present invention.

The leakage detection apparatus 100 according to an embodiment of the present invention may include an OES data generation unit 110, a gas analysis unit 120, and a monitoring unit 130.

Describing each component, the OES data generation unit 110 may generate OES data for the first gas injected into the chamber.

Here, the first gas may include one or more of nitrogen (N ₂ ), chlorine (Cl ₂ ), and argon (Ar), and each gas may be injected into a specific SCCM (Standard Cubic Centimeter per Minute).

For example, the first gas is only one gas injection (single gas injection) may be, nitrogen (N ₂₎ and argon (Ar), chlorine (Cl ₂₎ and argon (Ar) and nitrogen (N ₂₎ , Chlorine (Cl ₂ ), and argon (Ar) may be implanted together.

The OES data generation unit 110 may generate OES data including the wavelength of the first gas and the optical intensity of each wavelength interval.

Meanwhile, the gas analyzer 120 may perform a quantitative analysis on the second gas from the OES data of the first gas.

Here, the second gas may be an undesirable gas species introduced into the chamber due to leak during the first gas injection. In the present embodiment, the second gas may be a gas which causes a decrease in the etching rate during the plasma etching process Nitrogen (N ₂ ) may correspond to the second gas.

The gas analyzer 120 may perform quantitative analysis of nitrogen (N ₂ ) from OES data for at least one of nitrogen (N ₂ ), chlorine (Cl ₂ ) and argon (Ar) Actinometry using species can be used.

That is, the wavelength of nitrogen (N ₂ ) is divided at a specific wavelength of the inert gas species, and as a result, the fluctuation of the light emission intensity at a specific wavelength of nitrogen (N ₂ ) is analyzed to determine whether the instability fluctuates.

For this purpose, the gas analyzer 120 can find specific wavelengths of the inert gas species and the second gas, nitrogen (N ₂ ), in order to use the light intensity measurement method. From the OES data obtained during the plasma etching process, The wavelength of nitrogen (N ₂ ) can be separately detected, and then the representative value of the detected wavelength can be set.

The representative value may be set to standard deviation and the gas analyzer 120 may calculate the representative value using a predetermined representative value, that is, a specific wavelength of the inert gas species and a specific wavelength of nitrogen (N ₂ ) After performing the measurement method, the correlation coefficient is used to verify the relationship with the process conditions.

Here, if the reliability of the value for the relationship between the process conditions (for example, the plasma-related parameter and the surface-related parameter mentioned in FIG. 1) is 0.95 or less, the gas analyzer 120 can calculate the inert gas species and nitrogen (N ₂ ) may be re-executed to select specific wavelengths whose reliability with respect to the relationship with the process conditions exceeds 0.95.

If it is determined that the variation of the light emission intensity of nitrogen (N ₂ ) is unstable at a specific wavelength selected for performing the light amount measurement method as described above, the gas analysis unit 120 may determine that the first gas corresponding to the OES data for example, chlorine (Cl _2)), injection of nitrogen (N ₂₎ are identified as possible will flow, and the first gas (e.g., chlorine (Cl _2), the light emission intensity at a particular wavelength of) the To determine whether the instability of the injection of the first gas (e.g., chlorine (Cl ₂ )) has changed.

At this time, the gas analyzer 120 may consider the amount of adjustment by the MFC of the first gas (for example, chlorine (Cl ₂ )).

For reference, the non-activated gas species may include argon (Ar), which is extremely limited in reactivity with other gases and can be accurately controlled in the amount of gas, which is helpful for measuring the strength of other gas species .

On the other hand, the monitoring unit 130 can determine the cause of the inflow of the second gas, for example, nitrogen (N ₂ ) present in the chamber, based on the above-described analysis result of the gas analyzer 120.

Here, the cause of the inflow of the second gas, for example, nitrogen (N ₂ ) may be a leakage of the chamber due to the O-ring wear, a malfunction of the MFC (Mass Flow Controller) for controlling the injection amount of the first gas, Leak. &Lt; / RTI &gt;

3 is a flowchart illustrating a process of detecting a cause of a leak in a plasma etching process according to an embodiment of the present invention.

The process shown in FIG. 3 can be performed by the leak cause detecting apparatus 100 shown in FIG. 2. Hereinafter, the leak cause detecting apparatus 100 will be mainly described to explain the flow chart of FIG.

First, when the first gas is injected into the chamber during the plasma etching process, a reaction occurs in the chamber, and the leak detecting apparatus 100 receives the light generated by the reaction and generates OES data (S301).

That is, the OES data includes information on the first gas. Here, the first gas is a gas injected into the plasma production chamber for the plasma etching process.

After S301, the leak detecting apparatus 100 performs a quantitative analysis on the second gas from the OES data (S302).

Here, the second gas may be nitrogen (N ₂ ) as a gas species to be introduced into the chamber due to leakage during the first gas injection.

After S302, the leak detecting apparatus 100 divides the wavelength of the second gas to a specific wavelength of the inert gas species, and analyzes the variation of the light emission intensity at a specific wavelength of the second gas as a result (S303).

Here, the inert gas species may include argon (Ar), and argon (Ar) is extremely limited in reactivity with other gases and the amount of gas can be precisely controlled, which may be helpful in measuring the strength of other gas species .

After S303, the leak detecting apparatus 100 selects the first gas related to the inflow of the second gas based on the results of S302 and S303, and analyzes the variation of the light emission intensity at the specific wavelength of the first gas ( S304).

At this time, the amount of adjustment by the MFC of the first gas can be considered.

After S304, the leak detecting apparatus 100 determines the cause of leak occurrence in the plasma etching process based on the analysis result in S304 (S305).

Here, the occurrence of the leak may be a cause of the inflow of the second gas during the etching process, and the cause of the inflow of the second gas may be solved if the cause of the leak is found.

For reference, the cause of the leak may include at least one of leakage of the chamber due to O-ring wear, malfunction of the MFC controlling the injection amount of the first gas, and line leak of the first gas.

Hereinafter, the experimental results for detecting the cause of the occurrence of the leak that reduces the etching rate of the etching process in the plasma etching process according to the embodiment of the present invention will be described.

For reference, the cause of the decrease in the etch rate of the etching process is set as the following three possible defects.

1. Chamber leakage due to O-ring wear

2. MFC (Mass Flow Controller) malfunction

3. Gas line leak

In the present invention, the experiment was divided into two sets in order to focus on the gas chemistry and to confirm the possibility of the defect. Experimental conditions were as follows.

- RF power: top 300W, bottom 70W

- frequency: top and bottom respectively 13.56MHz

- Pressure: 3 mTorr

- Process time: 2 minutes

For reference, the table shows experimental procedures (# 1- # 6) according to the kind and amount of the first gas to be injected.

FIG. 4 is a graph showing an experimental result (OES data) for detecting the cause of the leakage reducing etching rate in the etching process according to an embodiment of the present invention.

For reference, nitrogen (N ₂ ) detection was allowed regardless of the first gas injection selection because nitrogen (N ₂ ) is greater than 78% of air.

Figure 4 corresponds to # 1 to # 3 in the above table. Nitrogen (N ₂ ), chlorine (Cl ₂ ) and argon (Ar) are injected as a first gas from # 1 to # 3 .

First, the # 1 OES data is the data obtained when 5 sccm nitrogen (N ₂ ) gas is injected, which is very similar to the nitrogen plasma, but it is difficult to conclude that the result is derived entirely from injected nitrogen.

The data of # 2 OES data were obtained when 20 sccm chlorine (Cl ₂ ) gas was injected and it was found that high intensity chlorine (Cl ₂ ) peak and slight nitrogen (N ₂ ) .

The data of # 3 OES data are obtained when 5 sccm argon (Ar) gas is injected, and no results related to nitrogen can be detected.

It can not be concluded from the experimental results shown in FIG. 4 that a decrease in the etching rate in the etching process due to chamber leakage due to O-ring wear occurs.

Nitrogen should be detected in the OES data of # 3 if it is caused by wear of the O-ring, ie damage to the vacuum seal.

5 is a graph showing experimental results (OES data) for detecting the etch rate reduction cause of the etching process according to another embodiment of the present invention.

For reference, nitrogen (N ₂ ) detection was allowed regardless of the first gas injection selection because nitrogen (N ₂ ) is greater than 78% of air.

FIG. 5 corresponds to # 4 to # 6 of the above table, and at least one of nitrogen (N ₂ ) and chlorine (Cl ₂ ) is injected together with argon (Ar) as a process gas from # 4 to # 6.

The data of # 4 OES data is obtained when 5 sccm nitrogen (N ₂ ) gas and 5 sccm argon (Ar) gas are injected together (that is, 5 sccm argon (Ar) gas is injected in case of # 1) And nitrogen (N ₂ ) intensity of # 1 are similar to each other.

The data of # 5 OES data was obtained when 20 sccm chlorine (Cl ₂ ) gas and 5 sccm argon (Ar) gas were injected together (that is, 5 sccm argon (Ar) gas was injected in case of # 2) N ₂ ) peaks are detected.

This can be a major cause of MFC malfunctions or gas line leaks, but we can not conclude that MFC malfunctions are related.

For reference, in comparison between # 4 and # 5, no nitrogen (N ₂ ) injection was observed in # 5, but a small amount of nitrogen (N ₂ ) peak was observed (also observed in # 2) Because of the total number of photons detected by the CCD photon detector.

Therefore, there is a limitation in simply comparing the intensity of direct OES data in each experiment, and analysis through chemical actinometric analysis using inert gas species can be applied.

For reference, argon (Ar) may be included as the inert gas species.

Figure 6 is a graph of nitrogen (N ₂₎ is enlarged on the detected wavelength range in Fig. 5 and Fig.

FIG. 6 shows the wavelength range (500 nm to 700 nm) in which nitrogen (N ₂ ) in # 2, # 3, # 5 and # 6 was detected before performing the analysis through actinometric analysis using inert gas species As an enlarged graph, it can be seen that the optical emission intensity corresponding to argon (Ar) did not change much with respect to the increased process gas.

This is because the reactivity of argon (Ar) gas with other gases is extremely limited and the amount of argon (Ar) gas can be accurately controlled, and the observed argon (Ar) gas intensity helps to measure the strength of other gas species You can give.

7 is a graph showing experimental results (OES data) for detecting the etch rate reduction cause of the etching process according to another embodiment of the present invention.

The graph of FIG. 7 shows the result of quantitative investigation of the amount of nitrogen (N ₂ ) in the chamber during the experiment (# 4 to # 6) by applying actinometry using argon (Ar) (N ₂ ) peaks at 584.5 nm and 643.5 nm can be seen to be divided by argon (Ar) peaks of argon (Ar) 750 nm wavelength.

For reference, the method of selecting the specific wavelength of argon (Ar) and nitrogen (N ₂ ) in order to use the light amount measuring method has been described above, so it will be omitted.

As shown in Figure 7, # 4 showed stable and consistent levels of nitrogen (N ₂ ) peaks detected, and no evidence of nitrogen gas MFC malfunction was observed.

However, the chlorine (Cl ₂₎ gas nitrogen of 20sccm a # 5, # 6 implanting (N ₂₎ Looking at the peak, and can see the instability change noticeable, which chlorine (Cl ₂₎ gas injection when the additional nitrogen (N ₂ ) has been introduced.

Here, the fluctuation of the nitrogen (N ₂ ) peak may mean that the injection of nitrogen (N ₂ ) from the gas line or the MFC fitting is not controlled and that the MFC, which can cause plasma disturbance due to inadequate control of the gas injection amount Malfunction can be another possibility.

In order to confirm the malfunction of the chlorine gas MFC, the emission intensity of 912.1 nm wavelength was analyzed in # 4 and # 5.

8 is a graph showing experimental results (OES data) for detecting the etch rate reduction factor of the etching process according to another embodiment of the present invention.

8 is a graph showing the emission intensity of 912.1 nm wavelength in # 4 and # 5 in order to confirm malfunction of chlorine gas MFC.

# 5 shows a slight fluctuation of the intensity of the chlorine (Cl ₂ ) gas peak, which may be caused by the unstable operation of the chlorine (Cl ₂ ) gas MFC (for reference, between the gas cylinder and the MFC The actual amount of chlorine (Cl ₂ ) may differ from the degree of air leakage in the fitting).

Chlorine (Cl _2), the amount injected into the actual chamber is chlorine (Cl ₂₎ were less than the assumed amount hayeotdago adjustment in gas MFC (as a reference, air amount is not controlled dependent on a vacuum state), thereby # 5, # 6 of nitrogen (N ₂₎ variations in the peak was found that mainly chlorine (Cl ₂₎ that the cause could not control the injection of gaseous nitrogen in line fitting (N _2), chlorine (Cl ₂₎ problem through the gas MFC Substitution Respectively.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: Leak detection device
110: OES data generation unit
120: Gas analysis section
130:

Claims (10)

A method for detecting a cause of a leak in a plasma etching process,
Generating optical analysis data for a first gas injected into the plasma production chamber during the etching process;
Performing a quantitative analysis on the second gas from the optical analysis data; And
Determining a source of the second gas present in the chamber based on the result of the quantitative analysis of the second gas
, &Lt; / RTI &
Wherein the second gas is a gas species introduced into the plasma production chamber due to the leak when the first gas is injected,
Wherein determining the cause of the second gas inflow comprises:
The method of claim 1, wherein the at least one of the at least one of the instability of the first gas and the at least one instability of the second gas is determined by using the 'measurement method using the inert gas species' during the quantitative analysis of the second gas, And the matching result is determined as the influx of the second gas. The method according to claim 1,
The measurement method using the inert gas species used in the quantitative analysis of the second gas
Dividing the wavelength of the second gas to a specific wavelength of the inert gas species and analyzing the variation of the light emission intensity of the second gas to determine whether the instability varies,
Wherein the instability fluctuation is determined as a fluctuation of instability when the variation of the light emission intensity exceeds a specific threshold range. 3. The method of claim 2,
Wherein performing the quantitative analysis of the second gas comprises:
Separating and detecting wavelengths of the inert gas species and the second gas from the optical analysis data, and setting representative values using the standard deviation from the detected wavelengths, respectively; And
The wavelength of which the correlation coefficient between the result and the process condition for the plasma etching process exceeds a specific value is used as the specific gas species of the inert gas species, Selecting a wavelength and a specific wavelength of the second gas, respectively
And a second step of detecting a leakage cause of the etching process. 3. The method of claim 2,
Wherein the inert gas species comprises argon (Ar). 3. The method of claim 2,
Wherein performing the quantitative analysis of the second gas comprises:
Wherein the light emission intensity of the first gas is analyzed at a specific wavelength to judge whether the instability of the first gas is varied or not when the variation of the light emission intensity of the second gas is judged to be an instability variation,
The method of claim 1 or 2, wherein the variation of the instability with respect to the injection of the first gas is determined as an instability variation when the variation of the light emission intensity of the first gas exceeds a specific threshold range,
The first gas related to the inflow of the second gas based on at least one of the result of quantitative analysis of the second gas and the fluctuation of the light emission intensity at a specific wavelength of the second gas when the first gas is plural, Is selected as the etch depth. The method according to claim 1,
The first gas injected into the plasma production chamber includes gas injected into the plasma production chamber for the etching process and the second gas includes nitrogen in the air component introduced into the chamber from the outside of the plasma production chamber A leakage cause of the etching process. 6. The method of claim 5,
The cause of the inflow of the second gas is,
A leakage of the plasma generation chamber due to O-ring wear, a malfunction of an MFC (Mass Flow Controller) controlling an injection amount of the first gas, and a leaking of the first gas,
Wherein determining the cause of the second gas inflow comprises:
And selecting an influent cause that is matched with the variation of the light emission intensity of the first gas among the plurality of influent causes when the second gas causes the influx of the second gas to match with the variation of the light emission intensity of the second gas A method for detecting a cause of leakage in an etching process. An apparatus for detecting the cause of a leak in a plasma etching process,
An optical analysis data generation unit for generating optical analysis data on the first gas injected into the plasma production chamber during the etching process;
A gas analysis unit for performing a quantitative analysis on the second gas from the optical analysis data; And
A monitoring unit for determining the cause of the second gas existing in the plasma production chamber based on a result of the quantitative analysis of the second gas,
, &Lt; / RTI &
Wherein the second gas is a gas species introduced into the plasma production chamber due to the leak when the first gas is injected,
The monitoring unit,
The method of claim 1, wherein the at least one of the at least one of the instability of the first gas and the instability of the second gas, which is determined using the 'measurement method using the inert gas species' Is determined as the influx of the second gas to the etch process. 9. The method of claim 8,
Wherein the gas analyzer comprises:
Wherein a measurement method using the inert gas species is used for the quantitative analysis of the second gas,
The wavelength of the second gas is divided by the specific wavelength of the inert gas species and the variation of the light emission intensity of the specific wavelength of the second gas is analyzed to determine whether the instability varies,
Determining whether the instability of the first gas is fluctuated by analyzing the light emission intensity of the first gas at a specific wavelength,
The monitoring unit,
And selecting an influent cause that is matched with the variation of the light emission intensity of the first gas among the plurality of influent causes when the second gas causes the influx of the second gas to match with the variation of the light emission intensity of the second gas And a leakage detecting device for detecting the leakage cause of the etching process. An apparatus for performing a plasma etching process,
A gas supply part for injecting a gas into the plasma production chamber;
A plasma generator for generating a plasma; And
A leakage cause detection unit for monitoring a gas injected into the plasma production chamber during an etching process to detect a leakage cause of the etching process;
, &Lt; / RTI &
The leakage cause detection unit detects,
Generating optical analysis data for a first gas injected into the plasma production chamber during the etching process and performing a quantitative analysis of a second gas present in the plasma production chamber from the optical analysis data, Of the first gas and the fluctuation of instability of the first gas and the second gas determined by using the 'measurement method using the inert gas species' in the quantitative analysis of the first gas and the second gas, Determine the cause,
Determining the fluctuation of the instability of the second gas by analyzing the variation of the light emission intensity at a specific wavelength of the second gas by dividing the wavelength of the second gas to a specific wavelength of the inert gas species,
Determining whether the first gas has instability fluctuation by analyzing a light emission intensity at a specific wavelength of the first gas when it is determined that the second gas is an instability fluctuation, 2 Determine the cause of the influx of gas,
And selecting an influent cause that is matched with the variation of the light emission intensity of the first gas among the plurality of influent causes when the second gas causes the influx of the second gas to match with the variation of the light emission intensity of the second gas Wherein the plasma etch apparatus comprises:

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