KR101589272B1 - Touch sensor in-cell type organic electroluminescent device and methode of fabricating the same - Google Patents

Abstract

The present invention relates to a liquid crystal display device comprising a plurality of pixel regions defined in a display region and including gate and data lines crossing each other, a power supply line, a switching thin film transistor connected to the gate and the data line, A touch sensor comprising: a first substrate including an organic electroluminescent diode and a second transparent substrate facing the first substrate; and a first electrode formed in contact with the drain electrode of the driving thin film transistor in each pixel region, An electrode; A buffer pattern surrounding each of the pixel regions and covering an edge of the first electrode; An organic light emitting layer formed on the first electrode in the pixel region; A second electrode formed on the entire surface of the display region on the organic light emitting layer; A first material layer formed on the entire surface of the display region above the second electrode; And a touch electrode formed on the first material layer in correspondence with a plurality of specific pixel regions of the plurality of pixel regions, wherein the second electrode, the first material layer, and the touch electrode form a touch sensor. A touch sensor type organic electroluminescent device is provided.

Organic electroluminescent device, touch sensor, simplification, light weight, thin type

Description

TECHNICAL FIELD [0001] The present invention relates to a touch sensor type organic electroluminescent device and a method of fabricating the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device having a touch sensor as an in-cell type and a method of manufacturing the same.

An organic electroluminescent device, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics. In addition, since it is a self-luminous type that emits light by itself, it has a large contrast ratio, can realize an ultra-thin display, can realize a moving image with a response time of several microseconds (μs), has no viewing angle limit, And it is driven with a low voltage of 5V to 15V of direct current, so that it is easy to manufacture and design a driving circuit.

An organic electroluminescent device having such characteristics is largely divided into a passive matrix type and an active matrix type. In a passive matrix type, a scan line and a signal line cross each other to form a matrix type device. In order to drive the pixels, the scanning lines are sequentially driven with time, and therefore, in order to show the required average luminance, the instantaneous luminance must be given by multiplying the average luminance by the number of lines.

However, in the active matrix method, a thin film transistor, which is a switching element for turning on / off a pixel, is located for each pixel, and the first electrode connected to the thin film transistor is turned on / Off, and the second electrode facing the first electrode is formed on the front surface and becomes a common electrode.

In the active matrix method, the voltage applied to the pixel is charged in the storage capacitor (C _ST ), and power is applied until the next frame signal is applied. Thus, Continue to run for one screen without. Accordingly, since the same luminance is exhibited even when a low current is applied, an active matrix type organic electroluminescent device is mainly used since it has advantages of low power consumption, high definition and large size.

Hereinafter, the basic structure and operating characteristics of such an active matrix organic electroluminescent device will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel of a general active matrix organic electroluminescent device.

As shown, one pixel of the active matrix type organic electroluminescent device includes a switching thin film transistor STr, a driving thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E, .

That is, a gate line GL is formed in a first direction and a data line DL is formed in a second direction intersecting the first direction to define a pixel region P, A power supply line PL for applying a power supply voltage is formed.

A switching thin film transistor STr is formed at the intersection of the data line DL and the gate line GL and a driving thin film transistor DTr electrically connected to the switching thin film transistor STr is formed have.

At this time, the driving thin film transistor DTr is electrically connected to the organic light emitting diode E. That is, the first electrode, which is one terminal of the organic electroluminescent diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power supply line PL. At this time, the power supply line (PL) transfers the power supply voltage to the organic light emitting diode (E). A storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on and the signal of the data line DL is transmitted to the gate electrode of the driving thin film transistor DTr, The thin film transistor DTr is turned on so that light is output through the organic light emitting diode E. At this time, when the driving thin film transistor DTr is turned on, a level of a current flowing from the power supply line PL to the organic light emitting diode E is determined. Accordingly, the organic light emitting diode E The storage capacitor StgC is capable of maintaining a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off The level of the current flowing through the organic light emitting diode E can be kept constant until the next frame even if the switching thin film transistor STr is turned off.

2 is a schematic cross-sectional view of a conventional organic electroluminescent device.

The first and second substrates 10 and 70 are disposed opposite to each other and the edge portions of the first and second substrates 10 and 70 are sealed by a seal pattern 80 A driving thin film transistor DTr is formed on the first substrate 10 for each pixel region P and a first electrode 47 is formed in connection with each of the driving thin film transistors DTr An organic light emitting layer 55 including a light emitting material corresponding to red, green and blue colors is formed on the first electrode 47. An organic light emitting layer 55 including a light emitting material corresponding to red, And a second electrode 58 is formed on the front surface. At this time, the first and second electrodes 47 and 58 serve to apply an electric field to the organic light emitting layer 55.

The second electrode 47 and the second substrate 58 formed on the first substrate 10 are separated from each other by a predetermined distance by the seal pattern 80 described above.

3 is a cross-sectional view of a pixel region including a conventional thin film transistor of a conventional organic electroluminescent device.

A semiconductor layer 13 composed of a first region 13a of pure polysilicon and a second region 13b doped with an impurity, a gate insulating film 16, and a gate electrode (not shown) are formed on the first substrate 10, An interlayer insulating film 23 having a semiconductor layer contact hole 25 exposing the first region 13 and a second region 13b and source and drain electrodes 33 and 36 are sequentially stacked to form a driving thin film transistor DTr, And the source and drain electrodes 33 and 36 are connected to a power supply line (not shown) and the organic light emitting diode E, respectively.

The organic electroluminescent diode E includes a first electrode 47 and a second electrode 58 opposed to each other with the organic light emitting layer 55 interposed therebetween. The first electrode 47 is formed in contact with one electrode of the driving thin film transistor DTr for each pixel region P and the second electrode 58 is formed over the organic light emitting layer 55 .

Further, the second substrate 70 is configured to encapsulate the first substrate 10 having the above-described structure.

The first electrode 47 may be formed of indium-tin-oxide (ITO) or indium-tin-oxide (ITO), which is a transparent conductive material having a high work function value to serve as an anode electrode when the driving thin film transistor DTr is p- - zinc (IZO), and the second electrode 58 is made of a metal material having a low work function value, for example, aluminum (Al) so as to serve as a cathode electrode.

On the other hand, in recent years, a product in which a touch sensor is incorporated in a mobile phone, a PDA or a notebook which can be carried by a person has been attracting much attention from users, and organic electroluminescent devices are also used as display devices in all of these products. A product with a touch sensor attached to the foot is being released recently.

4 is a schematic cross-sectional view of an organic electroluminescent device to which a conventional touch sensor is attached.

The organic electroluminescent device 2 having the conventional touch sensor includes a first substrate 10 on which a switching and driving thin film transistor (not shown, DTr) and an organic electroluminescent diode E are formed, A first panel PA1 composed of a second substrate 70 for the first panel PA1 and a touch first electrode 82 formed on the lower and upper portions of the first panel PA1 via a first adhesive layer 72, A protection layer formed on the outer surface of the third substrate 80 via the third substrate 80 and the second adhesive layer 92 constituted by the touch second electrode 86 having a plurality of bar- And a second panel PA2 including a sheet 90. [

Therefore, it can be understood that the organic electroluminescent device 2 including the conventional touch sensor is made up of three substrates 10, 70, and 90 although the protective sheet 90 is omitted.

At this time, the substrates 10, 70, and 90 used in the organic electroluminescent device 2 are mainly glass substrates having transparent characteristics, and three organic EL devices having a touch sensor (TS) When the electroluminescent element 2 is constituted, the thickness of the electroluminescent element 2 becomes very large, and the weight of the electroluminescent element 2 becomes relatively heavy, thereby causing a problem that the display device is backed by a thin and light trend.

In addition, since a separate process for forming the touch sensor TS has to be performed, the process becomes complicated.

It is an object of the present invention to provide an organic electroluminescent device having a lightweight thin touch sensor by minimizing the use of a substrate.

Another object of the present invention is to minimize manufacturing cost by simplifying a manufacturing process by minimizing elements for implementing a touch sensor.

According to an aspect of the present invention, there is provided a touch sensor type organic electroluminescent device including a plurality of pixel regions defined in a display region, gate and data lines crossing each other, power supply lines, Type organic electroluminescent device including a switching thin film transistor connected to the first thin film transistor, a driving thin film transistor connected to the switching thin film transistor, and a first substrate including an organic light emitting diode and a second transparent substrate facing the first thin film transistor, A first electrode formed in the pixel region in contact with a drain electrode of the driving thin film transistor; A buffer pattern surrounding each of the pixel regions and covering an edge of the first electrode; An organic light emitting layer formed on the first electrode in the pixel region; A second electrode formed on the entire surface of the display region on the organic light emitting layer; A first material layer formed on the entire surface of the display region above the second electrode; And a touch electrode formed on the first material layer in correspondence to a plurality of specific pixel regions of the plurality of pixel regions, wherein the second electrode, the first material layer, and the touch electrode form a touch sensor .

Here, the organic light emitting layer is composed of red, green, and blue organic light emitting materials, and red, green, and blue organic light emitting layers are sequentially formed in each pixel region to emit red, green, and blue light. Is a pixel region that emits any one of the red, green, and blue pixel regions, or a pixel region that is disposed with a spacing of 1 to 10 pixel regions in the display region .

The specific pixel region may be a pixel region in which a white organic light emitting layer is formed to emit white when the organic light emitting layer is formed of an organic light emitting material that sequentially emits red, green, blue, and white in each pixel region Feature.

A polarizer may be formed on the outer surface of the second substrate.

In addition, a reflective plate made of aluminum (Al) or silver (Ag) having excellent reflection efficiency is formed under the first electrode, and the first electrode is made of a transparent conductive material having a relatively large work function value The first electrode is made of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), and the second electrode is made of a metal material having relatively low work function value, (ITO) or indium-tin-oxide (ITO) which is a transparent conductive material, and the touch electrode is made of one of aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au) and aluminum magnesium alloy A hole injection layer and a hole transporting layer are formed between the first electrode and the organic light emitting layer and a hole transporting layer is formed between the organic light emitting layer and the second electrode, Between the electrodes An electron transporting layer and an electron injection layer may be formed.

A method of manufacturing a touch sensor type insulated-cell type organic electroluminescent device according to the present invention includes a step of forming gate and data lines crossing each other on a first substrate in which a plurality of pixel regions are defined in a display region, Forming a switching thin film transistor connected to the switching thin film transistor and a driving thin film transistor connected to the switching thin film transistor; Forming a first passivation layer having a drain contact hole exposing a drain electrode of the driving thin film transistor; Forming a first electrode in each of the pixel regions over the first passivation layer to contact the drain electrode of the driving thin film transistor through the drain contact hole; Forming a buffer pattern surrounding each pixel region and covering a rim of the first electrode; Forming an organic emission layer on the first electrode in each of the pixel regions; Forming a second electrode over the entire display area on the organic light emitting layer; Forming a second passivation layer on the entire surface of the display region above the second electrode; Forming a touch electrode on the second protective layer corresponding to a specific pixel region of the pixel regions; And bonding the first substrate and the second transparent substrate so as to face the touch electrode.

In this case, the organic light emitting layer is made of an organic light emitting material that emits red, green, and blue light, and the pixel region is formed by sequentially and repeatedly forming red, green, and blue organic light emitting layers to emit red, green, , The specific pixel region is a pixel region that emits any one of the red, green, and blue light-emitting pixel regions, or a pixel region that is arranged to have a separation distance of one to ten pixel regions, The organic light emitting layer includes an organic light emitting material that emits white light in addition to red, green, and blue, and the pixel regions are sequentially and repeatedly formed with red, green, blue, and white organic light emitting layers to emit red, green, The specific pixel region is a pixel region that emits white light.

And attaching a polarizer to the outer surface of the second substrate.

A touch sensor type organic electroluminescent device according to the present invention includes a sensor for sensing a touch between a first substrate on which an organic light emitting diode is formed and a second substrate on which encapsulation is performed, It is effective to implement thinning by reducing the use of one substrate compared to that of the other substrate.

Further, by using the second electrode of the organic light emitting diode as the touch first electrode of the touch sensor, components for implementing the touch sensor are minimized, thereby simplifying the process and further reducing the manufacturing cost.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the drawings.

5 is a cross-sectional view of a touch sensor type insensitive-type organic electroluminescent device according to an embodiment of the present invention. Here, for convenience of description, a region where a switching thin film transistor is to be formed is defined as a switching region, and a region where a driving thin film transistor is to be formed is defined as a driving region.

The touch sensor type organic EL device 101 according to the present invention includes a first substrate 110 on which a driving and switching thin film transistor DTr (not shown), an organic light emitting diode E and a touch sensor are formed, And a second substrate 170 for encapsulation.

First, the structure of the first substrate 110 will be described.

A first region 113a of the first substrate 110 is formed of pure polysilicon in the pixel region P and a central portion of the pixel region P is doped with impurities at a high concentration to both sides of the first region 113a. A semiconductor layer 113 composed of a second region 113b is formed. At this time, a buffer layer (not shown) made of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be further formed on the entire surface between the semiconductor layer 113 and the first substrate 110 have. The buffer layer (not shown) prevents the deterioration of the characteristics of the semiconductor layer 113 due to the release of alkaline ions from the inside of the first substrate 110, which is a glass material, when the semiconductor layer 113 is crystallized .

A gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113 and a gate electrode 116 corresponding to the first region 113a of the semiconductor layer 113 is formed on the gate insulating layer 116. [ 120 are formed. The gate insulating layer 116 is connected to a gate electrode (not shown) for forming a switching thin film transistor (not shown) and extends in one direction to form a gate wiring (not shown).

In addition, an interlayer insulating film 123 is formed on the entire surface of the gate electrode 120 and the gate wiring (not shown). The interlayer insulating layer 123 and the gate insulating layer 116 under the semiconductor layer contact hole 125 expose the second regions 113b located on both sides of the first region 113a .

A data line (not shown) is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 to define a pixel region P intersecting the gate line (not shown) Wiring (not shown) is formed. The source and drain electrodes 113 and 114 are in contact with the second region 113b which are spaced apart from each other in the driving region DA and the switching region (not shown) above the interlayer insulating layer 123 and exposed through the semiconductor layer contact hole 125, Drain electrodes 133 and 136 are formed. A semiconductor layer 113 including the source and drain electrodes 133 and 136 and a second region 113b contacting the electrodes 133 and 136 and a gate electrode The insulating film 116 and the gate electrode 120 constitute a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively. At this time, the switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate wiring (not shown) and the data wiring (not shown). The data line (not shown) is connected to a source electrode (not shown) of the switching thin film transistor (not shown).

At this time, the driving and switching thin film transistor DTr (not shown) forms a p-type or n-type thin film transistor according to impurities doped in the second region 113b. In the case of the p-type thin film transistor, the second region 113b is formed by doping a group III element such as boron (B), and holes are used as carriers.

The first electrode 147 connected to the drain electrode 136 of the driving thin film transistor DTr functions as an anode or a cathode electrode depending on the type of the driving thin film transistor DTr. In the exemplary embodiment of the present invention, the first electrode 147 connected to the driving thin film transistor DTr functions as an anode electrode.

Also, a first passivation layer 140 is formed on the entire surface of the driving and switching thin film transistor DTr (not shown). At this time, a drain contact hole 143 is formed in the first passivation layer 140 to expose the drain electrode 136 of the driving TFT DTr.

A gate electrode (not shown) of the switching thin film transistor (not shown) is connected to the gate wiring (not shown), and a source electrode (not shown) of the switching thin film transistor And is connected to the data line (not shown).

The first passivation layer 140 having the drain contact hole 143 is in contact with the drain electrode 136 of the driving thin film transistor DTr through the drain contact hole 143, A first electrode 147 is formed for each pixel region P. Although not shown in the drawing, it is preferable that the first electrode 147 has a bilayer structure or a reflector (not shown) is provided under the first electrode 147 in view of maximizing the light efficiency. That is, when the first electrode 147 has a double layer structure, the upper layer (not shown) serves as an anode electrode and the lower layer (not shown) serves as a reflective plate Do.

An upper layer (not shown) of the first electrode 147 may have a relatively large work function value to serve as an anode electrode and may include a transparent conductive material such as indium-tin-oxide (ITO) or indium- (IZO), and a lower layer (not shown) of the first electrode 147 is made of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag) The organic light emitting layer 155 formed on the organic light emitting layer 155 reflects light upward to improve the light emitting efficiency. When the first electrode 147 is formed as a single layer structure, a reflective plate (not shown) may be further formed under the first electrode 147 as a metal material having excellent reflection efficiency have.

Next, a buffer pattern 150 is formed on the boundary of each pixel region P so as to overlap the rim of the first electrode 147 in the form of surrounding each pixel region P above the first electrode 147 have.

An organic light emitting layer 155 is formed on the first electrode 147 in each pixel region P surrounded by the buffer pattern 150. On the organic light emitting layer 155, Two electrodes 158 are formed. At this time, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode E.

Although not shown in the drawing, a multilayer structure (not shown) may be formed between the first electrode 147 and the organic emission layer 155, and between the organic emission layer 155 and the second electrode 158, A first light emission compensation layer (not shown) and a second emission compensation layer (not shown) may be further formed. At this time, the first emission compensation layer (not shown) of a plurality of layers is sequentially stacked from the first electrode 147, and is composed of a hole injection layer and a hole transporting layer, 2 emission compensation layer (not shown) is composed of an electron transporting layer and an electron injection layer from the organic light emitting layer 155. The first emission compensation layer (not shown) and the second emission compensation layer (not shown) of the multi-layer structure may be formed on the entire surface of the display region or may be formed separately for each pixel region P have.

The first electrode 147 formed on the organic light emitting layer 155 may be formed of a metal material having a relatively low work function value such as aluminum (Al), aluminum And is formed to have a thickness of about 10 Å to 200 Å so as to transmit light through one of AlNd, Ag, Mg, Au, and AlMg.

Next, the light efficiency of the organic light emitting layer 155 is improved on the second electrode 158 formed on the entire surface of the display region, and the protection of the second electrode 158 and the moisture penetration into the organic light emitting layer 155 are prevented The second passivation layer 160 is formed of an inorganic insulating material or an organic insulating material.

Next, as a most characteristic feature of the present invention, a bar-shaped touch second electrode 165 is formed on the second passivation layer 160 at a predetermined interval. At this time, the touching second electrode 165 is separated from the second protective layer 160 located below the second electrode 165 and the second electrode 158 (touch first electrode) formed on the entire surface of the display area, ).

Therefore, the second electrode 165 is a component of the organic electroluminescent diode E and is a component of the touch sensor TS.

Next, a second substrate 170 for encapsulating a transparent glass material or a transparent plastic material is formed on the touch second electrode 165 via an inert gas, an organic insulating material, or a face seal, Type organic electroluminescent device 101 according to the present invention.

At this time, a polarizing plate 175 may be further provided on the outer surface of the second substrate 170 to increase efficiency of light emitted from the organic light emitting layer 155. Since the polarizing plate 175 is mainly used for cell phones, PDAs, and notebooks, which are typically portable, the luminance characteristics at the front of the image are most important. Therefore, the polarizing plate 175 can be selectively passed through only the light incident at the characteristic angle, Is returned to the lower part and then reflected by a reflector (not shown), and is again incident at a specific angle to transmit. The polarizing plate 175 is not necessarily configured and may be omitted.

In the touch sensor type organic electroluminescent device 101 according to the present invention having the above-described configuration, the touch sensor TS is disposed between the second electrode 158 and the second passivation layer 160, And the second electrode 165. When a finger or the like comes into contact with the capacitor, the capacitor changes its capacitance due to the variation of the fringe field of the capacitor, and acts as a touch sensor TS.

6A and 6B are simplified cross-sectional views illustrating the operation of the touch sensor in the touch sensor type insensitive-type organic electroluminescent device according to the present invention. For convenience of explanation, the driving and switching thin film transistors and the organic light emitting diode are omitted and only the second substrate for the encapsulation and the touch sensor provided on the first substrate are shown.

6A, when the user's finger 195 or the like is not touched to the surface of the second substrate 170 in the touch sensor type organic EL device 101, The fringe field formed between the second electrode 158 and the touch second electrode 165 is kept constant, so that there is no change in the capacitance of the capacitor. Thus, the operation is not performed. As shown in FIG. 6B, When the touch of the user's finger 195 or the like is generated on the surface of the touch electrode 170 or the finger 195 or the like, the second electrode 158, the touch first electrode, the touch second electrode 165, And the touch sensor senses that the touch sensor is touched by the change, thereby performing the operation at the time of touch.

5, the touch sensor type organic EL device 101 according to the present invention having the above-described structure includes a second electrode 158, which is one component of the organic EL device E, The second protective layer 160, which is typically used as a touch first electrode of the touch sensor TS, is formed on top of the first protective layer 160 to prevent the moisture of the organic light emitting layer 155 from being used as a dielectric layer, A touch second electrode 165 having a bar shape spaced apart from the upper surface of the layer 160 is formed and then the second substrate 170 for encapsulation is attached to the second electrode.

Accordingly, since the protective sheet, the single substrate, the touch first electrode, and the dielectric layer can be omitted, the protective sheet, the single substrate, and the two material layers are omitted in the organic electroluminescent device having the conventional touch sensor, And it is characterized in that simplification of the process can be realized by omitting two material layers.

Although the touch second electrodes 165 are illustrated as being formed in a single pixel region within the display region, the touch second electrodes 165 are shown for convenience of explanation. In practice, the touch second electrodes 165 165) One pixel region P has a single bar shape.

The bar-shaped touch second electrode 165 does not necessarily have to be formed for each pixel region P and is formed mainly in the pixel region P in which the red, (P) in which the light emitting material layer (155) of any one of the colors (P) is formed. Alternatively, when the touch second electrode 165 is formed in one pixel region P, the touch second electrode 165 is not formed for one to ten neighboring pixel regions, Ten pixel regions may be formed at intervals.

The reason why the touch second electrode 165 is formed so as to have a predetermined spacing distance is that the touch second electrode 165 and the lower second electrode 158 (touch first electrode) must form a fringe field, The touch second electrode 165 is divided into a plurality of pixel units (P) in units of a pixel unit (P), since the area of the finger to be touched corresponds to several to several tens of pixel regions. The touch second electrode 165 is not formed in the area where the touch is formed even when the touch electrode is formed.

7A and 7B are views showing a part of a top view of a touch sensor type insensitive-type organic electroluminescent device according to a modified example of the present invention.

As shown in the figure, the touch sensor type organic electroluminescent device according to the modification of the present invention includes a white light emitting layer (not shown) for emitting white light in addition to pixel regions (R, G, B) And a pixel region W provided with a plurality of pixels.

In the case of a touch sensor type in-cell type organic EL device in which red, green, blue and white four pixel regions R, G, B and W are formed of dots representing one color, 165 are formed in the pixel region W in which an organic light emitting layer (not shown) emitting white light is formed.

The reason for forming the touch second electrode 165 in correspondence with the pixel region W in which the white organic light emitting layer (not shown) is formed is that the touch second electrode 165 is formed by forming the touch second electrode 165 configured for driving the touch sensor This is to minimize the problem of luminance degradation.

Even if the touch second electrode 165 is formed of a transparent conductive material, it does not transmit 100% of light emitted from the organic light emitting layer (not shown), and the transmittance decreases inside the touch second electrode 165, Since the pixel region W emitting white light has the best luminance characteristic, the touch second electrode 165 is formed in the pixel region W that emits white light, because the pixel region W that emits white relative to the pixel regions R, G, The problem of luminance degradation can be minimized.

Hereinafter, a method of manufacturing the touch sensor type in-cell type organic electroluminescent device according to the present invention will be described in brief with reference to FIG. At this time, the method of forming the switching and driving thin film transistors is the same as the manufacturing method of the general array substrate, and thus the method of forming the organic light emitting diode and the touch sensor will be mainly described.

First, gate wirings (not shown) and data wirings (not shown) and power supply wirings (not shown) are formed so as to intersect with each other in a display area on an insulating substrate 110 made of a transparent glass material or a plastic material, A switching thin film transistor (not shown) connected to the gate and data wiring (not shown) and a driving thin film transistor DTr connected to the switching thin film transistor (not shown) are formed.

Next, a first passivation layer 140 having a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr is formed on the switching and driving thin film transistor (not shown) (DTr) .

Next, a first metal layer (not shown) is formed entirely by depositing a metal material such as aluminum (Al) or silver (Ag) having excellent reflection efficiency over the first protective layer having the drain contact hole, A transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) having a relatively large work function value is deposited on a metal layer (not shown) to form a transparent conductive material layer (not shown).

Thereafter, the transparent conductive material layer (not shown) and the first metal layer (not shown) are coated with a photoresist, a mask including a series of unit processes such as exposure using an exposure mask, development of exposed photoresist, A reflective plate and a first electrode 147 are formed in each pixel region P through the drain contact hole 143 to be in contact with the drain electrode 136 of the driving TFT DTr.

Next, an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN x) is deposited on the first electrode 147 to form an inorganic insulating layer (not shown) A buffer pattern 150 is formed to cover the end portions of the first electrodes 147 in a manner surrounding each pixel region P.

Next, an organic light emitting material that emits red, green, and blue light or an organic light emitting material that emits red, green, blue, and white is formed on the buffer pattern 150 by using a shadow mask having an open portion (OA) Blue, or red, green, blue, and white on the first electrode 147 exposed to the outside of the buffer pattern 150 in each pixel region P by sequentially depositing the first electrode 147, Emitting layer 155 is formed.

Although not shown in the drawing, the first electrode 147 may be formed on the entire surface of the display region or each pixel region P before forming the red, green, and blue or red, green, blue and white organic emission layers 155, A first emission compensation layer (not shown) of a hole injection layer and a hole transporting layer may be formed. In this case, the organic emission layer 155 is formed on the first emission compensation layer (not shown).

Although not shown in the figure, a second emission compensation layer (not shown) made of an electron transporting layer and an electron injection layer is formed on the entire surface of the display region or each pixel region P above the organic emission layer 155 Not shown) may be further formed.

 Next, a metal material having a relatively low work function value such as aluminum (Al), an aluminum alloy (AlNd), or silver (Ag) is formed on the entire surface of the display region of the organic light emitting layer 155 or the second emission compensation layer (Mg), gold (Au), and aluminum magnesium alloy (AlMg) so that light emitted from the organic light emitting layer 155 can be transmitted through the second electrode 158 ). At this time, the organic light emitting layer 155 and the first electrode 147 located at the lower portion of the second electrode 158 formed on the entire surface of the display region form an organic light emitting diode E. The second electrode 158 is a component of the organic electroluminescent diode E, but functions as a touch first electrode of the touch sensor TS.

Next, the second electrode 158 is vapor-deposited on the organic light emitting layer 155 to control the light path, and then an inorganic insulating material is deposited or an organic insulating material is applied to maximize the light emitting efficiency, The second passivation layer 160 is formed. At this time, the second passivation layer 160 serves as a dielectric layer of the touch sensor TS.

Next, a transparent conductive material such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) is deposited on the second passivation layer 160 and patterned to form red, (P) or a pixel region which emits white light is provided, the white pixel region or the pixel region (P) has a spacing distance of 1 to 10 pixel region distances corresponding to a specific pixel region Thereby forming a touch second electrode 165 in the form of a bar.

At this time, the second electrode 158, the second protection layer 160, and the touch second electrode 165 formed on the entire surface of the display region form a touch sensor TS having a fringe field capacitance.

Next, a seal pattern (not shown) is formed along the outer edge of the display area with respect to the first substrate 110 constituting the organic light emitting diode E and the touch sensor TS, and a transparent glass material or a plastic material The touch sensor type insensitive-type organic EL device 101 according to the present invention can be completed by bonding the second substrate 170 in a vacuum or an inert gas atmosphere.

At this time, a transparent face seal may be applied to the entire surface between the second substrate 170 and the first substrate 110, in addition to the atmosphere of the inert gas or the vacuum, to form an adhesive layer.

Further, the polarizer 175 is further provided on the outer surface of the second substrate 170 to selectively transmit light incident at a specific angle, and the remaining light is directed toward a reflector (not shown) on the first substrate 110 The first substrate 110 and the second substrate 170 may be reflected continuously so as to be incident on the polarizer 175 at a specific angle between the first substrate 110 and the second substrate 170 so as to maximize luminous efficiency .

1 is a circuit diagram of a pixel of a general active matrix organic electroluminescent device.

2 is a schematic cross-sectional view of a conventional organic electroluminescent device.

3 is a cross-sectional view of one pixel region including a driving thin film transistor of a conventional top emission type organic electroluminescent device.

4 is a schematic cross-sectional view of an organic electroluminescent device to which a conventional touch sensor is attached.

5 is a cross-sectional view of a touch sensor type insoluble organic electroluminescent device according to an embodiment of the present invention.

FIGS. 6A and 6B are simplified cross-sectional views illustrating the operation of a touch sensor in a touch sensor type in-cell type organic electroluminescent device according to the present invention.

FIGS. 7A and 7B are views each showing a part of a top view of a touch sensor type in-cell type organic electroluminescent device according to a modification of the present invention; FIG.

Description of the Related Art

101: touch sensor Insel type organic electroluminescent device

110: first substrate 113: semiconductor layer

113a: first region 113b: second region

116: gate insulating film 120: gate electrode (of the driving thin film transistor)

123: interlayer insulating film 125: semiconductor layer contact hole

133: source electrode (of the driving thin film transistor)

136: drain electrode (of the driving thin film transistor)

140: first protective layer 143: drain contact hole

147: first electrode 150: buffer pattern

155: organic light emitting layer 158: second electrode (touch first electrode)

160: second protection layer 165: touch second electrode

170: second substrate 175: polarizer

DA: driving region E: organic light emitting diode

P: pixel area TS: touch sensor

Claims (10)

A switching thin film transistor connected to the gate thin film transistor and the data thin line, a driving thin film transistor connected to the switching thin film transistor, and an organic light emitting diode And a second transparent substrate facing the first substrate, wherein the first substrate and the second substrate are opposed to each other, A first electrode formed in each pixel region in contact with a drain electrode of the driving thin film transistor; A buffer pattern surrounding each of the pixel regions and covering an edge of the first electrode; An organic light emitting layer formed on the first electrode in the pixel region; A second electrode formed on the entire surface of the display region on the organic light emitting layer; A first material layer formed on the entire surface of the display region above the second electrode; And a touch electrode formed on the first material layer in correspondence with a plurality of specific pixel regions of the plurality of pixel regions, wherein the second electrode, the first material layer, and the touch electrode form a touch sensor. Touch Sensor Insel Type Organic Electroluminescent Device. The method according to claim 1, The organic light emitting layer is composed of red, green, and blue organic light emitting materials. Red, green, and blue organic light emitting layers are sequentially formed in each pixel region to emit red, green, and blue light. device. 3. The method of claim 2, The specific pixel region may be a pixel region that emits light of any one of the red, green, and blue pixel regions, or a pixel region that is disposed with a spacing of one to ten pixel regions in the display region, Type organic electroluminescent device. The method according to claim 1, The specific pixel region is a pixel region in which a white organic emission layer is formed to emit white when the organic emission layer is formed of an organic emission material that sequentially emits red, green, blue, and white in each pixel region Touch Sensor Insel Type Organic Electroluminescent Device. The method according to claim 1, And a polarizer is formed on the outer surface of the second substrate. The method according to claim 1, A reflective plate made of aluminum (Al) or silver (Ag) having excellent reflection efficiency is formed under the first electrode, The first electrode is made of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), which is a transparent conductive material having a relatively large work function value so as to serve as an anode electrode, The second electrode may be formed of a metal material having a relatively low work function value such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg) Alloy (AlMg) Wherein the touch electrode is made of indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) which is a transparent conductive material. The method according to claim 6, A hole injection layer and a hole transporting layer are formed between the first electrode and the organic light emitting layer, Wherein an electron transporting layer and an electron injection layer are formed between the organic light emitting layer and the second electrode. A gate electrode and a data wiring intersecting each other on a first substrate having a plurality of pixel regions defined in the display region, a power supply wiring, a switching thin film transistor connected to the gate and the data wiring, and a driving thin film transistor connected to the switching thin film transistor ; ≪ / RTI > Forming a first passivation layer having a drain contact hole exposing a drain electrode of the driving thin film transistor; Forming a first electrode in each of the pixel regions over the first passivation layer to contact the drain electrode of the driving thin film transistor through the drain contact hole; Forming a buffer pattern surrounding each pixel region and covering a rim of the first electrode; Forming an organic emission layer on the first electrode in each of the pixel regions; Forming a second electrode over the entire display area on the organic light emitting layer; Forming a second passivation layer on the entire surface of the display region above the second electrode; Forming a touch electrode on the second protective layer corresponding to a specific pixel region of the pixel regions; And bonding the first substrate and the second transparent substrate to face the touch electrode Type organic electroluminescent device. 9. The method of claim 8, The organic light emitting layer is made of an organic light emitting material that emits red, green, and blue light. In the pixel region, red, green, and blue organic light emitting layers are sequentially and repeatedly formed to emit red, The specific pixel region is a pixel region that emits any one of the red, green, and blue light emitting pixel regions, or a pixel region that is disposed to have a separation distance of one to ten pixel regions, Alternatively, the organic light emitting layer may include an organic luminescent material that emits white light in addition to red, green, and blue, and the pixel regions are sequentially and repeatedly formed with red, green, blue, and white organic light emitting layers, Wherein the specific pixel region is a pixel region that emits white light when the organic electroluminescence element is caused to emit light. 9. The method of claim 8, And attaching a polarizer to the outer surface of the second substrate.

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