KR101584232B1 - A Reaction Bonded Silicon Carbide and A Manufacturing method of the same - Google Patents

Abstract

The present invention provides a method of manufacturing a semiconductor device, comprising: providing a first reaction sintered silicon carbide body; Placing a porous material in a certain region of the first reaction sintered silicon carbide body; And providing a predetermined pressure and a constant temperature to the first reaction-sintered silicon carbide body and the porous material, and a reaction-sintered silicon carbide body according to the present invention, wherein the reaction-sintered silicon carbide It is possible to effectively remove the residual Si present in the sieve and to improve the mechanical properties such as the strength at high temperature compared with the conventional process.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction-sintered silicon carbide body,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction-sintered silicon carbide body and a method of manufacturing the same, and more particularly, to a reaction-sintered silicon carbide body for minimizing the amount of residual Si present in a reaction sintered silicon carbide body, .

Reaction bonded silicon carbide (RBSC) is relatively low at 1500-1700 ° C, and the starting material is relatively inexpensive SiC, C and Si among the raw materials for the ceramic. It is relatively easy to process, Because of the advantage that it is easy to make the product, it is utilized industrially in various fields such as jig for semiconductor process and various kinds of crucibles.

Generally, in the process of producing reactive sintered silicon carbide, an appropriate amount of C is uniformly mixed with SiC powder, and then the resulting mixture is molded into a desired shape to prepare a predetermined shaped body. The formed body is placed around the Si powder, At a temperature of 1410 캜 or higher.

In particular, when high-temperature characteristics superior to ordinary reaction-sintered silicon carbide are required, a mixed powder in which a metal having a higher melting temperature than Si is mixed with Si may be used or may be used as an alloy powder.

At this time, when heated at high temperature, molten Si is impregnated into the porous SiC and C molded body by the capillary force, and SiC is formed by reaction with C.

However, in the case of the reaction-sintered silicon carbide produced by the above-described general process, the Si does not react with the C in the specimen, and residual Si is always present, and its value is generally known to be about 10-20%.

Due to this, the reaction-sintered silicon carbide produced by the general process has a relatively strong strength at room temperature of 200 MPa or more, but has a problem in that the strength is drastically reduced due to softening of residual Si at a temperature of 1350 ° C or more.

Japanese Laid-Open Patent No. 1998-209181

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above and it is an object of the present invention to provide a reaction sintered silicon carbide sintered body which minimizes the amount of residual Si present in the reaction sintered silicon carbide body, A silicon carbide body and a method for producing the same.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

In order to solve the above-mentioned problems, the present invention provides a method of manufacturing a semiconductor device, comprising: providing a first reaction sintered silicon carbide body; Placing a porous material in a certain region of the first reaction sintered silicon carbide body; And providing the first reaction-sintered silicon carbide body and the porous material at a constant pressure and a constant temperature. The present invention also provides a method for producing a reaction-sintered silicon carbide body.

According to the present invention, the step of placing the porous material in a certain region of the first reaction-sintered silicon carbide body may include the step of bringing the porous material into contact with a certain surface of the first reaction- Of the present invention.

In addition, the present invention provides a method of manufacturing a porous silicon carbide porous body, wherein residual Si present inside the first reaction-sintered silicon carbide body is removed from the porous silicon carbide body by the step of providing a predetermined pressure and a constant temperature to the first reaction- And a method for manufacturing a reaction sintered silicon carbide body.

The present invention also provides a method of manufacturing a porous silicon carbide body, comprising the steps of: providing a predetermined pressure and a predetermined temperature to the first reaction-sintered silicon carbide body and the porous body; removing the porous body located in a certain region of the first reaction- The present invention also provides a method for producing a reaction-sintered silicon carbide body.

In addition, the present invention provides a reaction-sintered silicon carbide body produced by the above production method.

In the present invention as described above, the step of providing the first reaction-sintered silicon carbide body and the porous material at a predetermined pressure and a constant temperature may be performed to effectively remove residual Si present in the reaction sintered silicon carbide body The mechanical properties such as strength at high temperature can be remarkably improved as compared with the conventional process.

In addition, in the present invention, the reliability of the material can be remarkably improved by effectively removing residual Si that causes a large residual stress in the material due to the difference in thermal expansion coefficient with SiC as a base material.

Further, the present invention can have an excellent advantage in manufacturing a fiber-reinforced composite material having excellent properties at high temperatures.

FIGS. 1A and 1B are schematic views for explaining a method for producing a general reaction sintered silicon carbide body, wherein FIG. 1A is a diagram showing a state before a reaction, and FIG. 1B is a diagram showing a state after a reaction.
FIG. 2 is a flow chart for explaining a method of producing reaction-sintered silicon carbide according to the present invention.
3A and 3B are schematic views for explaining a method of producing the reaction-sintered silicon carbide according to the present invention, wherein FIG. 3A is a view showing a state before the high-temperature pressing treatment, FIG. Fig.
FIG. 4A is a photograph showing the specimen shape before the high temperature pressurizing process according to the present invention, and FIGS. 4B and 4C are photographs showing the specimen shape after the high temperature pressurizing process according to the present invention. FIG.
FIG. 5A shows the specimen shape before the high temperature pressurizing process according to the present invention, FIG. 5B shows the specimen shape after the high temperature pressurization process according to the present invention at 1600 ° C., FIG. 5C shows the high temperature pressurizing process according to the present invention at 1650 ° C. 5d is a specimen shape subjected to the high temperature pressing process according to the present invention at 1700 ° C, and FIG. 5e is a specimen shape subjected to the high temperature pressing process according to the present invention at 1750 ° C.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. &Quot; and / or "include each and every combination of one or more of the mentioned items. ≪ RTI ID = 0.0 >

Although the first, second, etc. are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may be the second component within the technical scope of the present invention.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. The terms " comprises "and / or" comprising "used in the specification do not exclude the presence or addition of one or more other elements in addition to the stated element.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" And can be used to easily describe a correlation between an element and other elements. Spatially relative terms should be understood in terms of the directions shown in the drawings, including the different directions of components at the time of use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element . Thus, the exemplary term "below" can include both downward and upward directions. The components can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

In general, silicon carbide (SiC) has excellent mechanical strength and chemical resistance, such as high hardness after diamond, and thus industrial application is made in many parts.

However, due to its high hardness, it is classified as a representative embossed material, which limits the application of various shapes of parts.

In order to solve these problems, SiC and C powders were formed and impregnated with molten Si. Reaction Bonded Silicon Carbide (SiC), which forms and bonds β-SiC according to the chemical reaction between Si and C, RBSC) was developed. (Hereinafter, the term reaction-sintered silicon carbide may be used in combination with terms such as reaction-sintered silicon carbide body, reaction-sintered silicon carbide porous body, porous silicon carbide reaction sintered body, and porous reaction sintered silicon carbide material.)

SiC produced by the conventional sintering method requires a high temperature of at least 2000 ° C. In contrast, the reaction-sintered silicon carbide using the infiltration reaction of the molten silicon produces dense sintered bodies having little pores at a relatively low temperature range of 1500 to 1700 ° C. .

Further, since the original dimensions and shape of the formed body are substantially maintained after the sintering, large-sized silicon carbide parts having a complicated shape can be manufactured at a relatively low manufacturing cost with minimal processing.

However, since the local temperature distribution changes in the molten Si due to the SiC reaction formation heat during the reaction, and the heat transfer and the mass transfer rate difference occur in the molten Si-C system, the supersaturated region of C melted in the liquid Si is generated, SiC is reported to react and precipitate.

Therefore, as β-SiC is precipitated on the surface of α-SiC due to Si + C → SiC reaction, β-SiC is filled in the fine aggregate distribution method between α-SiC particles and the remaining part is filled with molten Si It has been reported that sintered silicon carbide has a dense structure without pores, and its high temperature corrosion resistance, room temperature strength, abrasion resistance and the like are improved to almost the same level as silicon carbide.

For this reason, reaction sintered silicon carbide materials have been widely applied to boats such as semiconductor process tubes, liner tubes, wafer carriers, and loading areas such as dummy wafers, edge rings, and forks.

However, due to the residual Si in the reaction sintered silicon carbide sintered body, the reacted sintered silicon carbide material has a low thermal shock due to difference in thermal expansion coefficient between the residual Si and the base SiC, a high temperature strength due to softening and melting of the residual Si at 1350 ° C. And there is a disadvantage of low plasma corrosion resistance and the like, so that the use thereof in high temperature application fields is limited.

Recently, attempts have been made to increase the application temperature by melting a metal having a melting point higher than that of Si with Si and reacting with it. For example, studies have been made to increase the temperature of the reaction-sintered silicon carbide to 1400 ° C or more by increasing the melting temperature to 1800 ° C or more by melting Hf metal together with Si.

However, in this case, it is necessary to use expensive Hf, etc., and when the reaction-sintered silicon carbide manufacturing process temperature is advanced at a high temperature of 1800 ° C. or more, which is the melting temperature of Hf-Si, There is a problem that fiber damage occurs.

FIGS. 1A and 1B are schematic views for explaining a method for producing a general reaction sintered silicon carbide body, wherein FIG. 1A is a diagram showing a state before a reaction, and FIG. 1B is a diagram showing a state after a reaction.

First, referring to FIG. 1A, a typical reaction-sintered silicon carbide body is produced by mixing an appropriate amount of C into SiC powder and then molding the SiC powder into a desired shape to produce a molded body 11 including SiC and C.

Thereafter, the formed body 11 including the SiC and C is placed in the vacuum baking furnace 10 and then the Si powder 12 is placed in a predetermined region of the formed body 11 including the SiC and the C, .

At this time, the formed body 11 including the produced SiC and C can be placed on the jig 13 inside the vacuum baking furnace 10.

The vacuum furnace 10 includes a molded body 11 including the SiC and the C and a heating means 14 for providing a predetermined temperature to the Si powder 12.

Next, referring to FIG. 1B, heat is applied to the formed body 11 and the Si powder 12 including the produced SiC and C by the heating means 14, and the produced SiC and C And the Si powder 12 react with each other.

At this time, the Si powder 12 becomes molten by the given heat provided to the Si powder 12, and the molten Si 15a is impregnated into the porous formed body 11 by the capillary force, The molten Si (15a) reacts with C in the formed body (11) to form SiC, whereby the reaction sintered silicon carbide body (16) can be produced.

However, in the case of the reaction-sintered silicon carbide produced by the general process, the Si (15b) remaining in the specimen does not react with C at all times and is always present. As described above, %.

Therefore, the reaction-sintered silicon carbide produced by the general process has a relatively strong strength at room temperature of 200 MPa or more, but the strength is drastically reduced due to softening of the residual Si (15b) at a temperature of 1350 ° C or more.

FIGS. 3A and 3B are schematic views for explaining a method of manufacturing a reaction-sintered silicon carbide according to the present invention. FIG. 3A is a cross- FIG. 3B is a view showing a state after the high temperature pressurizing treatment. FIG.

2 and 3A, a method of manufacturing a reaction-sintered silicon carbide body according to the present invention provides a first reaction sintered silicon carbide body (S110).

In the first reaction sintered silicon carbide body 16, there is Si (15b) which is not reacted with C in the specimen, and the Si (15b) remains in the specimen. As described above, the value is usually 10 to 20% .

Meanwhile, the first reaction-sintered silicon carbide body 16 may be the reaction-sintered silicon carbide body of FIG. 1B, and thus may be manufactured by the manufacturing method shown in FIGS. 1A and 1B. However, the present invention does not limit the method of producing the first reaction sintered silicon carbide body.

Next, referring to FIGS. 2 and 3A, a method of manufacturing a reaction-sintered silicon carbide body according to the present invention includes a step of placing a porous material in a predetermined region of the first reaction-sintered silicon carbide body (S120).

The positioning of the porous material 140 in a certain region of the first reaction-sintered silicon carbide body 16 means that the porous material 140 is brought into contact with a certain surface of the first reaction-sintered silicon carbide body 16 .

The porous material 140 is for removing residual Si (15b) existing in the first reaction sintered silicon carbide body 16 by high temperature pressing as described later, and the porous material 140 is a SiC , C, or a mixture thereof.

At this time, when the porous material is composed of a mixture of SiC and C, it may be a molded body containing SiC and C of FIG.

3A, the porous material 140 located in a certain region of the first reaction-sintered silicon carbide body 16 and the first reaction-sintered silicon carbide body 16 is pressed against the pressing jig 110, And the pressing jig 110 may provide a certain pressure to the first reaction sintered silicon carbide body 16 and the porous material 140 by the pressing means 120. [

The first reaction sintered silicon carbide body 16 and the heating means 130 for providing a predetermined temperature to the porous material 140 are disposed outside the pressing jig 110.

3A shows a pressurizing jig 110 and a pressurizing means 120 for providing a predetermined pressure to the first reaction sintered silicon carbide body 16 and the porous material 140. In addition, 1 reaction sintered silicon carbide body 16 and the heating means 130 for providing a certain temperature to the porous material 140. However, the present invention is not limited thereto.

That is, in the present invention, other means capable of providing a predetermined pressure and a predetermined temperature to the first reaction sintered silicon carbide body 16 and the porous material 140 may be used.

Next, referring to FIGS. 2 and 3B, a method of producing a reaction-sintered silicon carbide body according to the present invention includes providing a predetermined pressure and a predetermined temperature to the first reaction-sintered silicon carbide body and the porous material (S130). (Hereinafter, step S130 may be referred to as a high temperature pressurizing step for convenience of explanation.)

In the present invention, the porous material 140 is brought into contact with a certain surface of the first reaction-sintered silicon carbide body 16, and the first reaction-sintered silicon carbide body and the porous material are supplied with a constant pressure and a constant temperature, The residual Si (15b) present inside the first reaction-sintered silicon carbide body (16) can be transferred to the porous material (140).

That is, if the first reaction sintered silicon carbide body 16 is heated to a temperature of 1350 ° C or higher at which softening of Si progresses, and a pressure of 0.2 to 30 MPa is applied to the first reaction sintered silicon carbide body 16, The residual Si (15b) existing inside the porous material (140) is squeezed into the porous material (140).

3B, the porous material 140 is divided into a first porous material layer 140a and a second porous material layer 140b, and only the residual Si material 15b moves to the second porous material layer 140b However, the residual Si (15b) can be moved over the entire area of the porous material 140 only for convenience of explanation.

The predetermined pressure may be 0.2 to 30 MPa. When the constant pressure is less than 0.2 MPa, the effect of removing residual Si in the first reaction-sintered silicon carbide body is not apparent, and when the constant pressure exceeds 30 MPa, The effect of additional pressurization is not clear. Therefore, in the present invention, the predetermined pressure is preferably 0.2 to 30 MPa.

The predetermined temperature is preferably 1350 to 1700 ° C. If the predetermined temperature is lower than 1350 ° C., deformation due to pressurization of residual Si does not actively occur, so that migration of residual Si to the porous material does not actively occur, When the constant temperature exceeds 1700 占 폚, the viscosity of the molten Si at 1700 占 폚 or more is sufficiently low, and since the same result can be obtained even at a temperature lower than 1700 占 폚, the temperature range exceeding 1700 占 폚 is not significant, Therefore, in the present invention, the predetermined temperature is preferably 1350 to 1700 ° C.

On the other hand, the high-temperature pressurizing step may be carried out in a vacuum, nitrogen or argon atmosphere.

Next, referring to FIGS. 2 and 3B, a method of manufacturing a reaction-sintered silicon carbide body according to the present invention includes removing the porous material located in a certain region of the first reaction-sintered silicon carbide body S140).

That is, by providing the constant pressure and the constant temperature of S130, residual Si residing in the first reaction sintered silicon carbide body moves into the porous material, and the porous material is unnecessary , And the porous sintered silicon carbide body according to the present invention can be produced by removing the porous material.

Since the porous material has low strength, the porous material can be removed by mechanical processing.

FIG. 4A is a photograph showing the specimen shape before the high temperature pressurizing process according to the present invention, and FIGS. 4B and 4C are photographs showing the specimen shape after the high temperature pressurizing process according to the present invention. FIG.

FIG. 4B shows the specimen No. 1 having a small amount of residual Si, FIG. 4C shows the specimen No. 2 having a large amount of residual Si, and graphite felt was used as the porous material. Respectively.

4A to 4C, a comparison of specimen shapes before and after the high-temperature pressurizing process according to the present invention clearly showed that the residual Si existing in the reaction sintered silicon carbide body was discharged toward the porous material, It was confirmed that the amount of residual Si in the reaction sintered silicon carbide body increases as the amount of residual Si increases.

Table 1 below shows the effect of squeeze forging on the residual Si content of the specimen on the room temperature strength. In the following Table 1, specimens squeezed forging at 1600 ° C are indicated as (-1600). That is, the portion indicated by (-1600) corresponds to the specimen subjected to the high-temperature pressing process according to the present invention.

Condition Strength (MPa) Condition Strength (MPa) No.1 228 ± 146 No.2 90 ± 72 No.1-1600 160 ± 32 No.2-1600 65 ± 52

The strength of the raw material was very high due to the large amount of residual Si, but the No.1 specimen with a relatively small amount of residual Si in the specimen showed a higher strength than the No.2 specimen (228 vs 90 MPa). In addition, the strength value of Si / Si specimens decreased sharply in case of No.2 specimens with a large residual Si, because the residual stress generated by the difference in the thermal expansion coefficient between Si and SiC was lower than that of Si, It is judged that the strength is greatly decreased because it is larger in the No. 2 specimen which exists in large numbers.

 On the other hand, under the No. 1 condition, the high intensity deviation of such a raw material remarkably decreased from 146 MPa to 32 MP after the high temperature pressurization process proposed in the present invention. This is because the residual Si, which greatly influences the strength reduction of the specimen, is greatly reduced by the present process.

At this time, the reason why the specimen (No.1-1600) subjected to the high temperature pressurization process, which is the method proposed in the present invention, has a lower strength value at room temperature than the specimen No. 1, do.

Table 2 shows the influence of the high-temperature pressing step of the present invention on the high-temperature strength of the reaction-sintered silicon carbide body. In the following Table 2, specimens squeezed forging at 1600 ° C are indicated as (-1600). That is, the portion indicated by (-1600) corresponds to the specimen subjected to the high-temperature pressing process according to the present invention. When the high temperature strength was measured at 1350 占 폚 under the conditions for measuring the strength of these specimens, 1350 占 폚 was described as the condition.

Condition Strength (MPa) Condition Strength (MPa) No.1 228 ± 146 No.1, 1350 ℃ 243 ± 44 No.1-1600 160 ± 32 No.1-1600, 1350 DEG C 351 ± 87

Under the condition of No. 1, the specimen of the produced reaction-sintered silicon carbide body showed no decrease in strength up to 1350 ° C, but a slight increase in strength was observed. This is because the decrease in strength due to the softening of Si at high temperature was observed at high temperature, but the decrease in strength caused by the variation of strength value due to high residual stress at room temperature was not caused by stress relaxation at high temperature. In the case of specimens under the No. 1 condition, the value was reduced to 32 MPa at a high temperature, compared with a deviation of the strength value at room temperature of 146 MPa.

In contrast, the No. 1600 specimen treated with the high-temperature pressurization process shown in this patent exhibited a strength of more than 2 times as high as room temperature at 1350 ° C (351 vs 160 MPa). As described above, the specimen treated by the present method exhibited a relatively low strength value due to the high residual stress generated during cooling at room temperature, but it is considered that the original high strength value was exhibited by the residual stress relaxation at high temperature.

In addition, the strength values of the specimens treated with the process of the present invention at 1350 ° C were significantly increased (351 vs 243 MPa) compared to No. 1 specimens, and the increase in strength at high temperature was 44%.

FIG. 5A is a photograph of the specimen before the high temperature pressurizing process according to the present invention. FIG. 5B is a graph showing the relationship between the high temperature pressurizing process according to the present invention at 1600 ° C. FIG. 5 (c) shows the specimen shape, FIG. 5 (c) shows the specimen shape subjected to the high-temperature pressing process according to the present invention at 1650.degree. And is a specimen shape subjected to the high-temperature pressing process according to the invention. At this time, the high-temperature pressurization process of Figs. 5B to 5E was performed under a nitrogen atmosphere at a pressure of 30 MPa for 30 minutes.

Referring to FIGS. 5A to 5E, similar remanent Si removal behavior was observed regardless of the process temperature at a temperature higher than 1410 DEG C, which is higher than the melting temperature of Si, of 1600 DEG C or higher.

On the other hand, in the temperature range of less than 1350 ° C. at which the softening of residual Si did not sufficiently occur, the removal of residual Si did not sufficiently take place, and since the viscosity of the molten Si was sufficiently low at a temperature of 1700 ° C. or higher, The process proposed in the present invention preferably proceeds in the temperature range of 1350 to 1700 캜.

As described above, in the manufacturing process of the conventional reaction-sintered silicon carbide body, a large amount of residual Si can not be prevented from being mixed into the specimen. This residual Si lowers the strength of the specimen at room temperature and high temperature, and causes a high variation in strength.

On the contrary, when the high-temperature pressing step according to the present invention is carried out, the residual Si present in the reaction sintered silicon carbide body can be effectively removed, and mechanical properties such as strength at high temperature can be remarkably improved .

In addition, the residual Si causes a large residual stress in the material due to the difference in thermal expansion coefficient between the SiC and the base material, and thus the strength value of the RBSC material produced by the residual Si varies greatly. In the present invention, The reliability of the material can be remarkably improved.

In addition, since the alloying method in which Hf or the like is tried to improve the high-temperature characteristics in the conventional process of producing a reaction-sintered silicon carbide body increases the process temperature, a fiber-reinforced composite material containing fibers such as C, SiC, In the present invention, since the process temperature and the pressure are low, the damage of the fiber during the process can be minimized. Therefore, through the method of producing the reaction-sintered silicon carbide body according to the present invention, The present invention can provide a fiber reinforced composite material having excellent properties.

Therefore, compared with the conventional art, the present invention can achieve a better effect at room temperature intensity variations and high temperature strength values of the reaction-sintered silicon carbide body.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Claims (8)

Providing a first reaction sintered silicon carbide body;
Positioning a porous material in a certain region of the first reaction sintered silicon carbide body; And
Providing a predetermined pressure and a constant temperature to the first reaction-sintered silicon carbide body and the porous material,
The step of disposing the porous material in a certain region of the first reaction-sintered silicon carbide body may include contacting the porous material to a certain surface of the first reaction-sintered silicon carbide body,
Wherein the first reaction sintered silicon carbide body and the porous sintered silicon carbide body are separated from each other by the step of providing a predetermined pressure and a constant temperature to the first reaction sintered silicon carbide body and the porous sintered body, Wherein the porous sintered silicon carbide body moves to the porous material in contact with the predetermined surface. The method according to claim 1,
Wherein the predetermined pressure is 0.2 to 30 MPa. The method according to claim 1,
Wherein the predetermined temperature is 1350 to 1700 ° C. delete delete The method according to claim 1,
Wherein the porous material is made of SiC, C or a mixture thereof. The method according to claim 1,
After providing the first reaction sintered silicon carbide body and the porous material with a constant pressure and a constant temperature,
Further comprising the step of removing the porous material located in a certain region of the first reaction-sintered silicon carbide body. A reaction-sintered silicon carbide body produced by the method of any one of claims 1, 2, 3, 6, and 7.

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