KR101580495B1 - Apparatus for controlling trace elements in low melting metals - Google Patents

Apparatus for controlling trace elements in low melting metals Download PDF

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Publication number
KR101580495B1
KR101580495B1 KR1020140116888A KR20140116888A KR101580495B1 KR 101580495 B1 KR101580495 B1 KR 101580495B1 KR 1020140116888 A KR1020140116888 A KR 1020140116888A KR 20140116888 A KR20140116888 A KR 20140116888A KR 101580495 B1 KR101580495 B1 KR 101580495B1
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tube
metal
cooling
target metal
heating
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KR1020140116888A
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Korean (ko)
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윤재식
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한국기초과학지원연구원
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Priority to KR1020140116888A priority Critical patent/KR101580495B1/en
Priority to PCT/KR2015/008683 priority patent/WO2016036030A1/en
Priority to CN201580059461.9A priority patent/CN107075716A/en
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Publication of KR101580495B1 publication Critical patent/KR101580495B1/en

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/02—Refining by liquating, filtering, centrifuging, distilling, or supersonic wave action including acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nonlinear Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to an apparatus for controlling trace elements of a low melting point metal, which comprises: a tube forming an internal vacant space to hold a target metal; a boat positioned within the tube and put the target metal thereon; a heating unit locally heating the target metal within the tube to make the heated part into a molten zone, which is in a liquid state; a moving unit moving the heating unit in the longitudinal direction of the tube; and a cooling unit cooling the target metal to make the zone except the molten zone in the target metal into a crystal zone which is in a solid state, wherein the trace elements contained in the target metal are assembled in the molten zone and are concentrated in one end of the target metal and removed as the heating unit moves, thereby making a high purity refinement process possible with respect to the low melting point metal.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low-

The present invention relates to a device for controlling a trace element of a low melting point metal, and more particularly to a device for controlling a trace element contained in a metal to increase the purity of the metal. To a very low-element-content metal element control device capable of controlling a trace element contained in a low-melting-point metal.

The conventional process for removing impurities in a single crystal solid to increase the purity is referred to as zone refining.

FIG. 1 briefly illustrates the principle of such a zone purification method. A narrow ring-shaped heater is used to heat and melt the rod-shaped monocrystalline ingot. The molten zone gradually moves from one end of the ingot to the other as the heater moves . At this time, when the main material, which has been melted and liquid, is recrystallized as the heater moves, the tendency to make crystals among the same materials causes the impurity to move to the molten portion in the liquid state at the liquid and solid interface.

That is, the ingot partly repeats the melting-crystallization process, and the impurities gradually move along the moving direction of the heater and finally gather at one end. This process is repeated several times, and at the end, one end of the ingot with denser impurities is cut off to obtain a high-purity crystal.

A related art is described in Korean Patent Laid-Open Publication No. 2003-0005722 ("Dry metallic germanium manufacturing method and its refining apparatus").

The refining apparatus according to the prior art includes a rotary tube 3 rotatably fixed to one side of the bed 1 and rotated by charging metallic germanium therein and a vacuum pump 5 for turning the inside of the rotary tube into a vacuum state And a heater 4 for heating the outside of the rotary tube to melt the metal germanium therein and move along the axial direction of the rotary tube during melting to move impurities contained in the metal germanium from the high temperature part to the low temperature part. , And is a device for purifying metal germanium by completely melting the metal germanium in a vacuum state and cutting off the impurities one by one (see FIG. 2).

However, the purification apparatus described in the above-mentioned prior art is an apparatus for purifying germanium having a melting point of 958.5 ° C. In the case of low melting metals such as Ga and In (metal materials practically used at a melting point of Pb melting at 327.4 占 폚), even when the heater moves, the melted portion remains in a liquid state without recrystallization There is a problem that the impurities can not be collected on one side. That is, there is a problem that the apparatus according to the prior art can not be applied to purification of a low melting point metal.

Korean Patent Laid-Open Publication No. 2003-0005722 ("Method for producing dry metallic germanium and its refining apparatus")

Disclosure of Invention Technical Problem [8] The present invention has been conceived to solve the problem that it is not easily melted and recrystallized when refining a low melting point metal having a melting point of 327.4 [deg.] C or less. The object of the present invention is to effectively control the trace elements contained in the low melting point metal, Which is capable of performing a high purity purification process of a low-melting-point metal.

A control device according to the present invention includes: a tube 100 having an empty space formed therein to receive an object metal 10; A boat (200) located in the tube (100) and containing the object metal (10); Heating means 300 for locally heating the target metal 10 in the tube 100 to make a molten zone 11 in a liquid state; Moving means (400) for moving the heating means (300) along the longitudinal direction of the tube (100); And cooling means (500) for cooling the target metal (10) so that a region of the target metal (10) excluding the melting portion (11) is a crystal zone (12) in a solid state; The impurities contained in the target metal 10 are gathered in the molten portion 11 and the impurities are moved to one end of the target metal 10 as the heating means 300 moves Can concentrate.

At this time, the target metal 10 may be any one selected from Ga, In, Bi, Pb, Sn, Li, Na and Rb.

The boat 200 may be formed of a metal having thermal conductivity and may be coated with a Teflon material. The cooling unit 500 may be installed on the outer surface of the lower or outer side of the boat 200, And a cooling control unit 520 connected to both ends of the micro tube 510 to control the circulation of the cooling water. The micro tube 510 is a passage through which the cooling water circulates.

In the present invention, the heating means 300 may be provided on the outer surface of the tube 100 at least one surface, apart from the side on which the cooling means 500 is located, .

In addition, the tube 100 may be connected to a vacuum pump 110 for evacuating the interior of the tube 100, and may include a nozzle 120 through which an atmospheric gas flows.

Finally, the present invention may further include a control unit for controlling the cooling temperature of the cooling unit 500, the heating temperature of the heating unit 300, the moving speed of the heating unit 300, and the moving range, The tube 100 may further include a temperature sensor connected to the controller and measuring an internal temperature.

In the conventional refining apparatus, it is impossible to purify a metal having a low melting point due to the problem that the molten portion of the metal is not recrystallized despite the movement of the heater. However, the apparatus for controlling a trace element of a low melting point metal according to the present invention, The present invention is advantageous in that a high purity refining process is also possible for a low melting point metal by further providing a cooling means for cooling the metal so that the melted region can be efficiently recrystallized as the heater moves.

Further, the control device according to the present invention further includes a control unit for controlling the cooling temperature of the cooling means, the heating temperature of the heater, the moving speed of the heater, and the moving range, thereby minimizing the portion to be removed after the process is completed. And the yield is maximized.

1 is a view showing the principle of the zone refining method
2 is a schematic diagram of a conventional metal germanium purification apparatus
3 is a schematic cross-sectional view of a device for controlling a trace element of a low melting point metal according to the present invention
4 is a partial perspective view showing an embodiment of an apparatus for controlling a trace element of a low melting point metal according to the present invention.
5 is a partial perspective view showing another embodiment of the apparatus for controlling a trace element of a low melting point metal according to the present invention.
Figure 6 is a schematic cross-

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The following drawings are provided as examples for allowing a person skilled in the art to sufficiently convey the idea of the present invention. Therefore, the present invention is not limited to the drawings and may be embodied in other forms. In addition, like reference numerals designate like elements throughout the specification.

In this case, unless otherwise defined, technical terms and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. In the following description and the accompanying drawings, A description of known functions and configurations that may unnecessarily obscure the description of the present invention will be omitted.

FIG. 3 is a schematic cross-sectional view of a device for controlling a trace element of a low melting point metal according to the present invention, FIG. 4 is a partial perspective view of an apparatus for controlling a trace element of a low melting point metal according to the present invention, FIG. 6 is a schematic cross-sectional view of FIG. 4. FIG. 6 is a partial cross-sectional view of another embodiment of a control apparatus for a low-melting-point metal.

3, the apparatus for controlling a trace element of a low melting point metal according to the present invention comprises a tube 100, a boat 200, a heating means 300, a moving means 400 and a cooling means 500 .

The tube 100 is connected to a vacuum pump 110 for evacuating the inside of the tube 100 to receive a metal to be refined (hereinafter, referred to as 'target metal') by forming an empty space therein, A nozzle 120 into which an atmospheric gas flows is provided. At this time, the tube 100 may be a generally used quartz tube.

Although the boat 200 is shown as a box in which the object metal 10 is placed in the tube 100 and the upper surface is opened in the figure, the shape of the boat 200 can be changed according to the person skilled in the art The present invention is not limited to the form shown in the drawings.

In the meantime, the object of the present invention is to provide a trace element controlling apparatus capable of purifying a low melting point metal which is put to practical use at 327.4 ° C or less at a high purity. Therefore, the object metal 10 is a typical low melting point metal such as Ga, In, Bi, Pb, Sn, Li, Na, and Rb.

The target metal 10 is in the form of an ingot in a bulk state and the boat 200 containing the target metal 10 is positioned at the center of the inside of the tube 100. Thereafter, the tube 100 is vacuumed by using the vacuum pump 110, and hydrogen gas is introduced into the tube 100 through the nozzle 120 to form a hydrogen atmosphere. Although hydrogen is used as the atmosphere gas in the present invention, various gases other than hydrogen can be used.

3 is a device for adjusting the amount of the atmospheric gas introduced into the tube 100 and is connected to one side of the tube 100 The burner 600 is provided for burning and discharging explosive hydrogen gas.

The heating means 300 is a device for locally heating the target metal 10 in the tube 100 to make a molten zone 11 in a liquid state and a normal heater or a plasma generator can be used have. 4 and 5, the heating means 300 is disposed on the outer surface of the tube 100 at least on one side except for the side where the cooling means 500, which will be described later, is spaced apart from the target metal 10 by a certain distance Respectively.

The moving means 400 may be constituted by the gear 410 and the belt 420 as shown in FIG. 3 as means for moving the heating means 300 along the longitudinal direction of the tube 100. However, this is shown as an example of the moving means 400 and can be used without limitation as long as it operates to move the heating means 300.

The heating means 300 provided on the outer surface of the tube 100 is moved by the moving means 400 to one side of the target metal 10 in a state of being spaced apart from the target metal 10 accommodated in the tube 100 by a predetermined distance The molten portion 11 also moves from one end to the other end of the target metal 10 as it gradually moves from the end side to the other end side.

However, as described above, the target metal 10 is a low melting point metal having a low melting point. For example, Ga metal, a typical low-melting metal, has a melting point of 29.76 ° C which is lower than the human body temperature. It is very difficult to locally melt the Ga metal because it melts easily in the human hand.

Specifically, in the case of a low melting point metal such as Ga metal, the process of recrystallization of the molten portion 11 into the crystal portion 12 takes a very long time. In this process, the molten portion 11 Can be crystallized as it is without moving along with the movement of the heating means 300. Furthermore, even if the heating means 300 has moved, the molten portion 11 may remain in the liquid state have.

A more serious problem is that as the number of repetition of the process increases, the atmosphere gas inside the tube 100 is heated and the temperature inside the tube 100 is continuously increased as the number of repetition of the process increases.

Accordingly, the control apparatus according to the present invention further includes a cooling means 500 for allowing the region of the metal object 10 excluding the molten portion 11 to be a crystal zone 12 in a solid state. In other words, the cooling means 500 is arranged so that the molten portion 11 which has been melted as the heating means 300 moves from the target metal 10 is effectively recrystallized to become the crystal portion 12, ).

Hereinafter, the process of controlling the trace elements of the target metal 10 using the controller of the present invention having the cooling unit 500 will be described in more detail.

6, as the heating means 300 moves to the right along the longitudinal direction of the tube 100, the molten portion 11 of the target metal 10 in the tube 100 also moves to the right, At the interface where the molten portion after the heating means 300 has passed and the molten portion is recrystallized by the cooling means 500 into the solid portion 12, trace elements such as impurities contained in the target metal 10 are melted The concentration of the trace elements existing in the molten portion 11 gradually increases as the molten portion 11 moves and is finally concentrated on the other end of the target metal 10. [

Thereafter, the target metal 10 is taken out and partially analyzed to confirm a point at which the concentration of the trace element starts to increase sharply. Then, a certain region of the other end of the target metal 10 is cut out, Can be obtained. If the trace metal element has not been removed sufficiently so that the target metal 10 has the desired purity, the process can be repeated several times.

That is, according to the present invention, since the cooling means 300 is further provided, the melted portion can be effectively recrystallized as the heating means 300 moves, so that the trace elements can move smoothly. Therefore, the present invention is advantageous in that it is possible to purify the object metal 10 which is low in melting point and is not easily recrystallized by melting, so that the refining process can be performed at a high purity.

3 to 5, the cooling unit 500 may include a micro tube 510 and a cooling control unit 520. [ The micro-tube 510 is a passage through which coolant circulates by forming a zigzag-like bend in contact with the lower outer side surface or the longitudinal outer side surfaces of the boat 200. The cooling control device 520 includes a micro- So that the cooling water is circulated.

4, the micro-tube 510 is configured to abut the lower outer surface of the boat 200, so that the heating means 300 can be positioned on the lower outer side of the tube 100 And may be formed in a band shape surrounding a certain area of the other side surface.

5, the micro tube 510 is configured to abut the longitudinally left and right outer surfaces of the boat 200, so that the heating means 300 is disposed on the upper and lower outer sides of the tube 100 Lt; / RTI >

However, the shapes of the heating means 300 and the cooling means 500 shown in FIGS. 4 and 5 are not limited to the above-described embodiments, but may be variously modified by those skilled in the art.

The cooling control device 520 sets the temperature of the cooling water appropriately according to the melting point of the metal 10 to cool the cooling water to a predetermined temperature and supplies the cooling water to the micro tube 510. The cooling water flows through the micro tube 510, So that the region of the target metal 10 heated by the heating means 300 excluding the molten portion 11 is cooled so as to be the crystal portion 12. At this time, water, ethylene glycol, or the like may be used as the cooling water.

It is obvious that the cooling means 500 is not limited to a method of performing cooling through the circulation of the cooling water, but various means may be used as long as the cooling means 500 plays the same role.

In addition, in the present invention, it is preferable that the fine tube 510 is provided so as to be in contact with the outer surface of the boat 200 and the boat 200 is formed of a metal having thermal conductivity as described above. This makes it possible to rapidly conduct heat to the target metal 10, thereby improving the cooling efficiency of the target metal 10. [ In order to achieve more uniform cooling, it is preferable that an area of contact between the micro tube (510) and the lower outer side surface or the right and left outer side surfaces of the boat (200) is as wide as possible.

Therefore, the boat 200 is typically made of gold, silver, copper, aluminum or the like having a high thermal conductivity and a melting point higher than that of the low melting point metal. Among them, the boat 200 is preferably made of copper having excellent thermal conductivity .

As described above, the boat 200 formed of a metal having excellent thermal conductivity is preferably coated thinly with Teflon. This is to prevent the reaction with the target metal 10 contained in the boat 200. If the boat 200 is made only of a metal having a good thermal conductivity, it can react with the molten target metal 10 to be.

On the other hand, as the melting point of the target metal is lower, fine control of the heating temperature of the heating means 300 and the cooling temperature of the cooling means 500 is essential. Therefore, although not shown in the drawing, the control device according to the present invention controls a cooling unit (not shown) for controlling the cooling temperature of the cooling unit 500, the heating temperature of the heating unit 300, the moving speed of the heating unit 300, Is further provided.

Hereinafter, the operation of the control unit will be described in more detail.

The control unit is electrically connected to the heating unit 300, the moving unit 400 and the cooling control unit 520 and controls the temperature of the cooling water flowing through the micro tube 510 and the heating temperature of the heating unit 300 It is preferable to optimize the interface slope T so as to maximize the interface slope T when the tangent at the intermediate point on the interface between the molten and crystalline portions of the target metal 10 is the interface slope T. [ At this time, since the cooling temperature of the cooling means 500 and the heating temperature of the heating means 300 are in inverse proportion to each other, they are mutually adjusted to find a point at which the interface slope T becomes maximum. The closer the interface slope (T) is to the vertical, the more the process yield can be maximized since the portion removed after the process is completed (cut off at the point where the trace element concentration begins to increase sharply) can be minimized.

It is preferable that the tube 100 further includes a temperature sensor (not shown) connected to the control unit and measuring the temperature inside the tube. As described above, since the temperature inside the tube 100 gradually increases as the number of repetition of the process increases, the temperature in the tube is continuously checked through the temperature sensor and transmitted to the control unit. 300 and the cooling means 500 are finely controlled.

In addition, the moving speed of the heating means 300 should be suitably adjusted. If the moving speed is high, it is preferable to adjust the speed as low as possible because a sufficient amount of element can not be removed. However, if the moving speed is too slow, It is inappropriate in terms of bringing the interface slope (T) to the maximum, so it should be appropriately adjusted.

In addition, the range of movement of the heating means 300 should also be set appropriately according to the length of the metal object 10.

Although the present invention has been described with reference to particular embodiments and specific embodiments thereof with reference to the accompanying drawings, it is to be understood that the present invention is not limited to the details thereof, It is to be understood that the invention is not limited to the above-described embodiment, and that various modifications and changes may be made by those skilled in the art to which the present invention pertains.

That is, it is needless to say that the control device according to the present invention may be used not only for refining low-melting metal but also for refining other metals.

Therefore, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the appended claims, fall within the scope of the present invention.

10: Target metal
11: melting portion 12: crystal portion
100: tube 110: vacuum pump
120: nozzle 121: gas regulator
200: boat 300: heating means
400: moving means 410: gear
420: Belt 500: Cooling means
510: micro tube 520: cooling control device
600: Burner

Claims (8)

A tube 100 in which an empty space is formed to receive the target metal 10;
A boat (200) located in the tube (100) and containing the object metal (10);
Heating means 300 for locally heating the target metal 10 in the tube 100 to make a molten zone 11 in a liquid state;
Moving means (400) for moving the heating means (300) along the longitudinal direction of the tube (100); And
A cooling means 500 for cooling the target metal 10 such that a region of the target metal 10 excluding the fused portion 11 is a crystal zone 12 in a solid state;
, ≪ / RTI >
The cooling means (500)
A micro tube 510 which is in contact with the lower outer side surface or the left and right outer side surfaces of the boat 200 and has a zigzag curved shape and circulates the cooling water, and both ends of the micro tube 510 are connected And a cooling control device 520 for controlling the circulation of the cooling water,
The impurities contained in the target metal 10 are gathered in the melting portion 11 and the impurities are concentrated to one end portion of the target metal 10 as the heating means 300 moves. Apparatus for controlling impurity elements of metals.
The method according to claim 1,
The target metal (10)
Ga, In, Bi, Pb, Sn, Li, Na, and Rb.
The method according to claim 1,
The boat (200)
Wherein the metal impurity element is formed of a metal having thermal conductivity and is coated with a Teflon material.
delete The method according to claim 1,
The heating means (300)
Wherein at least one surface of the tube (100) is provided on an outer surface of the tube (100) except for a side surface spaced apart from the target metal (10) by a predetermined distance and the side where the cooling means (500) is located.
The method according to claim 1,
The tube (100)
And a nozzle (120) connected to a vacuum pump (110) for evacuating the interior of the vacuum pump (100) and to which atmospheric gas is introduced at one side thereof.
The method according to claim 1,
The control device includes:
A control unit for controlling the cooling temperature of the cooling unit (500), the heating temperature of the heating unit (300), the moving speed of the heating unit (300), and the moving range;
Wherein the metal impurity element control device further comprises:
8. The method of claim 7,
The tube (100)
Further comprising a temperature sensor connected to the control unit and measuring an internal temperature of the metal impurity element.
KR1020140116888A 2014-09-03 2014-09-03 Apparatus for controlling trace elements in low melting metals KR101580495B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020140116888A KR101580495B1 (en) 2014-09-03 2014-09-03 Apparatus for controlling trace elements in low melting metals
PCT/KR2015/008683 WO2016036030A1 (en) 2014-09-03 2015-08-20 Method and apparatus for controlling trace elements of low-melting point metal
CN201580059461.9A CN107075716A (en) 2014-09-03 2015-08-20 The ultramicro-element control device and control method of low-melting-point metal

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Application Number Priority Date Filing Date Title
KR1020140116888A KR101580495B1 (en) 2014-09-03 2014-09-03 Apparatus for controlling trace elements in low melting metals

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101903032B1 (en) * 2017-04-28 2018-10-01 주식회사 익스톨 Zone refining apparatus for producting high purity tin

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001123232A (en) * 1999-10-26 2001-05-08 Furukawa Co Ltd Method for refining gallium
KR20030005722A (en) 2001-07-10 2003-01-23 (주)나인디지트 Manufacturing method of metal Germanium without liquid and refining device thereof
KR20030063009A (en) * 2002-01-22 2003-07-28 이우석 Method for coating jigs with TEFLON
KR20120126268A (en) * 2011-05-11 2012-11-21 주식회사 테라세미콘 In-line type heat treatment apparatus
KR20130096370A (en) * 2012-02-22 2013-08-30 삼성디스플레이 주식회사 Apparatus for refining organic material

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001123232A (en) * 1999-10-26 2001-05-08 Furukawa Co Ltd Method for refining gallium
KR20030005722A (en) 2001-07-10 2003-01-23 (주)나인디지트 Manufacturing method of metal Germanium without liquid and refining device thereof
KR20030063009A (en) * 2002-01-22 2003-07-28 이우석 Method for coating jigs with TEFLON
KR20120126268A (en) * 2011-05-11 2012-11-21 주식회사 테라세미콘 In-line type heat treatment apparatus
KR20130096370A (en) * 2012-02-22 2013-08-30 삼성디스플레이 주식회사 Apparatus for refining organic material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101903032B1 (en) * 2017-04-28 2018-10-01 주식회사 익스톨 Zone refining apparatus for producting high purity tin

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