KR101568652B1 - 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템 - Google Patents

기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템 Download PDF

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KR101568652B1
KR101568652B1 KR1020117022031A KR20117022031A KR101568652B1 KR 101568652 B1 KR101568652 B1 KR 101568652B1 KR 1020117022031 A KR1020117022031 A KR 1020117022031A KR 20117022031 A KR20117022031 A KR 20117022031A KR 101568652 B1 KR101568652 B1 KR 101568652B1
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substrate support
support structure
substrate
liquid
clamping
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KR20110120333A (ko
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헨릭 잔 데 종
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00Photographic printing apparatus
    • G03B27/32Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52Details
    • G03B27/58Baseboards, masking frames, or other holders for the sensitive material
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2005Seal mechanisms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007Holding mechanisms
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49998Work holding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249953Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249961With gradual property change within a component

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020117022031A 2009-02-22 2010-02-22 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템 Active KR101568652B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15441109P 2009-02-22 2009-02-22
US61/154,411 2009-02-22
US30619910P 2010-02-19 2010-02-19
US61/306,199 2010-02-19

Publications (2)

Publication Number Publication Date
KR20110120333A KR20110120333A (ko) 2011-11-03
KR101568652B1 true KR101568652B1 (ko) 2015-11-12

Family

ID=42154511

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117022031A Active KR101568652B1 (ko) 2009-02-22 2010-02-22 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템

Country Status (7)

Country Link
US (1) US8991330B2 (https=)
EP (1) EP2399279B1 (https=)
JP (1) JP5596058B2 (https=)
KR (1) KR101568652B1 (https=)
CN (1) CN102414781B (https=)
TW (1) TWI545682B (https=)
WO (1) WO2010094800A1 (https=)

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GB2469112A (en) 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Wafer support using controlled capillary liquid layer to hold and release wafer
NL1038213C2 (en) * 2010-03-04 2012-10-08 Mapper Lithography Ip Bv Substrate support structure, clamp preparation unit, and lithography system.
TWI514089B (zh) * 2011-04-28 2015-12-21 瑪波微影Ip公司 在微影系統中用於轉移基板的設備
WO2013052520A1 (en) * 2011-10-03 2013-04-11 Denton Vacuum, L.L.C. Semiconductor wafer treatment system
JP2013125792A (ja) * 2011-12-13 2013-06-24 Canon Inc 保持装置、描画装置、および、物品の製造方法
JP2013125791A (ja) * 2011-12-13 2013-06-24 Canon Inc 保持装置、描画装置、および、物品の製造方法
EP2940724B1 (en) 2012-12-25 2020-05-06 KYOCERA Corporation Attachment member and attachment device using the same
CN103928369B (zh) * 2014-04-04 2016-07-13 中国电子科技集团公司第十三研究所 磷化铟晶片退火盒
DE102014118830A1 (de) * 2014-12-17 2016-06-23 Mechatronic Systemtechnik Gmbh Vakuumspannvorrichtung zum Aufspannen von Werkstücken
CN115494703A (zh) * 2016-04-20 2022-12-20 Asml荷兰有限公司 衬底支撑件、光刻设备和装载方法
WO2019049588A1 (en) 2017-09-07 2019-03-14 Mapper Lithography Ip B.V. METHODS AND SYSTEMS FOR COATING A SUBSTRATE
CN112136218B (zh) * 2018-04-06 2024-07-09 迈可晟太阳能有限公司 用于太阳能电池电路形成的激光辅助金属化工艺
DE112019006417B4 (de) * 2018-12-27 2024-03-21 Sumco Corporation Quarzglastiegel und herstellungsverfahren für einen silicium-einkristall
NL2024445B1 (en) * 2019-12-12 2021-09-01 Delmic Ip B V Method and manipulation device for handling samples
JP7256773B2 (ja) 2020-04-24 2023-04-12 信越化学工業株式会社 平坦性制御方法、塗膜の形成方法、平坦性制御装置、及び塗膜形成装置
US12610781B2 (en) 2020-09-16 2026-04-21 Asml Netherlands B.V. Base plate and substrate assembly
CN114151881B (zh) * 2021-11-06 2023-10-17 奥佳华智能健康科技集团股份有限公司 一种湿帘分水器

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JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
US20050284372A1 (en) 2004-06-28 2005-12-29 Applied Materials, Inc. Chamber component having grooved surface with depressions
JP2006339615A (ja) 2005-06-06 2006-12-14 Tokyo Electron Ltd 基板保持台、基板温度制御装置及び基板温度制御方法
US20090027649A1 (en) 2007-07-13 2009-01-29 Guido De Boer Lithography system, method of clamping and wafer table

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US6281128B1 (en) 1999-06-14 2001-08-28 Agere Systems Guardian Corp. Wafer carrier modification for reduced extraction force
KR20030032034A (ko) * 2000-09-15 2003-04-23 어플라이드 머티어리얼스, 인코포레이티드 처리 장비용 두 개의 이중 슬롯 로드록
TWI255971B (en) 2002-11-29 2006-06-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7158211B2 (en) * 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005310933A (ja) * 2004-04-20 2005-11-04 Nikon Corp 基板保持部材、露光装置及びデバイス製造方法
KR101486407B1 (ko) * 2006-07-28 2015-01-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 방열 방법 및 프레임
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JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
US20050284372A1 (en) 2004-06-28 2005-12-29 Applied Materials, Inc. Chamber component having grooved surface with depressions
JP2006339615A (ja) 2005-06-06 2006-12-14 Tokyo Electron Ltd 基板保持台、基板温度制御装置及び基板温度制御方法
US20090027649A1 (en) 2007-07-13 2009-01-29 Guido De Boer Lithography system, method of clamping and wafer table

Also Published As

Publication number Publication date
WO2010094800A1 (en) 2010-08-26
CN102414781A (zh) 2012-04-11
TW201106443A (en) 2011-02-16
EP2399279B1 (en) 2018-10-31
TWI545682B (zh) 2016-08-11
EP2399279A1 (en) 2011-12-28
US20100236476A1 (en) 2010-09-23
JP5596058B2 (ja) 2014-09-24
CN102414781B (zh) 2015-07-15
US8991330B2 (en) 2015-03-31
JP2012518900A (ja) 2012-08-16
KR20110120333A (ko) 2011-11-03

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