KR101540046B1 - Apparatus and method for chemical polishing - Google Patents

Abstract

The present invention relates to a chemical polishing apparatus and a chemical polishing method capable of chemically polishing an inner surface of an object to be polished which is provided in the form of a pipe and includes a supply path connected to the inside of the object to be polished in the form of a pipe, An abrasive liquid supply unit for supplying an abrasive liquid to the inside of the abrasive article so that the inner surface of the abrasive article is abraded, and an exhaust passage communicating with the abrasive article to form a discharge path of the abrasive liquid from the abrasive object . Accordingly, the present invention is capable of performing a polishing process on an inner diameter of an object to be polished, particularly an object to be polished having a narrow gap, in a pipe shape, so that it can be applied in a polishing process in various fields.

Description

[0001] APPARATUS AND METHOD FOR CHEMICAL POLISHING [0002]

The present invention relates to a chemical polishing apparatus and a chemical polishing method, and more particularly, to a chemical polishing apparatus and a chemical polishing method for chemically polishing an aluminum pipe.

In general, the chemical polishing technique can improve the surface roughness of the object to be polished without using external electric power. Particularly, the chemical polishing technique is easy to polish the object to be polished having a shape difficult to electrolytic polishing, buffing, sanding and machining.

Such a chemical polishing technique is widely used in a polishing process for an object to be polished of an aluminum steel material (hereinafter, abrading object). Here, in order to treat the object to be polished, an abrasive liquid containing phosphoric acid and nitric acid or an abrasive liquid containing phosphoric acid, nitric acid and sulfuric acid may be used. At this time, phosphoric acid and nitric acid are used for the purpose of smoothing because the surface of the object to be polished can be passivated and the dissolution can be slowed down. Sulfuric acid can be used to change the reaction rate depending on the concentration, and is mainly used to improve the gloss.

Such a chemical polishing technique using a polishing liquid has already been disclosed in " Korean Patent Laid-Open Publication No. 10-2006-0018324 (Chemical polishing of aluminum, Mar. 23, 2006) ". The patent discloses chemical polishing of aluminum based on a polishing liquid composed of phosphoric acid, nitric acid and sulfuric acid.

Here, in the conventional chemical polishing technology including the above-mentioned patent, the polishing process for the object to be polished can be performed by filling the chemical tank with the polishing liquid as described above and inserting the object to be polished into the chemical tank. However, in the conventional chemical polishing technique, the object to be polished must be shaken with the object to be polished arranged in the chemical tank, or the polishing liquid must be agitated to remove the reaction gas from the surface of the object to be polished.

Thus, in the conventional chemical polishing technique, the size and shape of the object to be polished can be limited. Particularly, when a pipe-shaped object to be polished is chemically polished in a state in which it is disposed in a chemical tank, pits are generated by the reaction gas and uniform polishing is difficult, There is a problem.

Korean Patent Registration No. 10-0226884 (bath for chemical polishing of stainless steel surface and polishing method)

An object of the present invention is to provide a chemical polishing apparatus and a chemical polishing method capable of chemically polishing the inner surface of an object to be polished which is provided in a pipe shape.

Another object of the present invention is to provide a chemical polishing apparatus and a chemical polishing method capable of performing a chemical polishing treatment on an object to be polished without a chemical bath.

The chemical polishing apparatus according to the present invention comprises a supply path connected to the inside of a pipe-shaped object to be polished, and a polishing liquid supply unit for supplying the polishing liquid to the inside of the object to be polished through the supply path, And an exhaust passage communicating with the object to be polished to form a discharge path of the polishing liquid from the object to be polished.

The chemical polishing apparatus may further include a polishing liquid recovery path for connecting the discharge passage and the polishing liquid supply section to allow the polishing liquid to be recovered to the polishing liquid supply section.

The chemical polishing apparatus includes a hot water supply unit for supplying hot water for heating the object to be polished and a hot water supply path for connecting the supply path and the hot water supply unit to supply the hot water from the polishing supply unit to the inside of the object to be polished .

Wherein the chemical polishing apparatus comprises an oxide film removing liquid supply section for supplying an oxide film removing liquid for removing an oxide film on the inner surface of the object to be polished and the supply path and the oxide film removing liquid supply section, The oxidizing-liquid-removing-liquid supply path to supply the oxidizing-liquid-removing-liquid supplying path.

The chemical polishing apparatus may further include an oxide film removing liquid recovery path for connecting the discharge path and the oxide film removing liquid supplying unit to recover the oxide film removing liquid to the oxide film removing liquid supplying unit.

The chemical polishing apparatus includes a cleaning liquid supply unit for supplying a cleaning liquid for cleaning the supply path and the object to be polished, and a cleaning liquid supply unit for supplying the cleaning liquid supplied from the cleaning liquid supply unit to the inside of the supply object and the object to be polished And a cleaning liquid supply path for supplying the cleaning liquid to the cleaning liquid supply path.

Wherein the chemical polishing apparatus comprises a detection unit for detecting a cleaning state of the object to be polished and the supply path based on at least one of a conductivity and a hydrogen ion concentration of the cleaning liquid discharged to the discharge path, And may further include a detection path.

Wherein the chemical polishing apparatus comprises: a gas supply unit for supplying a gas supplied to the inside of the object to be polished; and a gas supply path for connecting the supply path and the gas supply unit, so that the gas from the gas supply unit is supplied to the inside of the object to be polished. As shown in FIG.

On the other hand, the chemical polishing method includes a polishing liquid supply step in which a polishing liquid is supplied to the inside of the object to be polished through a supply path connected to the inside of the object to be polished in the form of a pipe and a polishing step of polishing the inner surface of the object to be polished And an abrasive liquid discharging step of discharging the abrasive liquid from the object to be polished through an discharge path communicated with the object to be polished.

The chemical polishing method may further include a step of supplying hot water to the inside of the object to be polished through the supply path and heating the object to be polished before the supply of the polishing liquid.

The chemical polishing method may further include a first cleaning step in which, after the polishing liquid discharging step, the cleaning liquid is supplied to the inside of the object to be polished through the supply unit, and the polishing liquid remaining inside the object to be polished is cleaned .

The chemical polishing method may further include an oxide film removing step in which an oxide film removing liquid is supplied to the inside of the object to be polished through the supply unit after the first cleaning step to remove an oxide film on the inner surface of the object to be polished.

The chemical polishing method may further include a second cleaning step in which, after the oxide film removing step, the cleaning liquid is supplied to the inside of the object to be polished through the supply unit, and the oxide film removing liquid remaining inside the object to be polished is cleaned.

The chemical polishing method is characterized in that, after the second cleaning step, the cleaning liquid is supplied to the inside of the object to be polished through the supply part, and based on at least one of the conductivity and the hydrogen ion concentration of the cleaning liquid discharged from the object, And a washing step of detecting the washing state of the washing water.

The chemical polishing method may further include a drying step in which, after the detecting step, gas is supplied to the inside of the object to be polished through the supply part and the object to be polished is dried.

The chemical polishing apparatus and the chemical polishing method according to the present invention can perform a polishing process on an inner diameter of an object to be polished, particularly an object having a narrow gap, provided in a pipe shape, .

Further, the chemical polishing apparatus and the chemical polishing method according to the present invention do not require a chemical tank, so that the manufacturing cost for the polishing apparatus can be reduced, and a minimal amount of polishing liquid can be used to reduce the waste of the polishing liquid have.

The technical effects of the present invention are not limited to the effects mentioned above, and other technical effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a cross-sectional perspective view showing an object to be polished that can be applied to the polishing apparatus according to the present embodiment,
2 is a configuration diagram showing an algorithm for the polishing apparatus according to the present embodiment,
3 is a flowchart showing a polishing processing method according to the present embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it should be understood that the present invention is not limited to the disclosed embodiments, but may be implemented in various forms, and the present embodiments are not intended to be exhaustive or to limit the scope of the invention to those skilled in the art. It is provided to let you know completely. The shape and the like of the elements in the drawings may be exaggerated for clarity, and the same reference numerals denote the same elements in the drawings.

FIG. 1 is a cross-sectional perspective view showing an object to be polished which can be applied to the polishing apparatus according to the present embodiment, and FIG. 2 is a configuration diagram showing an algorithm for the polishing apparatus according to the present embodiment.

As shown in Figs. 1 and 2, the chemical polishing apparatus 100 (hereinafter, referred to as a processing chamber) according to the present embodiment is capable of polishing the inner surface of the object 10 to be polished, Do. Here, the object to be polished 10 may be made of aluminum steel or aluminum alloy steel, but this is an embodiment for explaining the present embodiment, and the material of the object to be polished 10 to be polished by the processing apparatus 100 is limited I do not.

Since the processing apparatus 100 can perform the polishing process for the object 10 without the chemical tank in which the polishing liquid is contained, it is possible to reduce the manufacturing cost for the processing apparatus 100, There is an advantage that the waste of the user can be reduced.

To this end, the processing apparatus 100 may include a hot water supply unit 110, a polishing liquid supply unit 120, an oxide film removing liquid supply unit 130, a cleaning liquid supply unit 140, a gas supply unit 150, and a detection unit 160 .

Before describing the components of the processing apparatus 100, the object to be polished 10 may be connected to the supply path P1 and the discharge path P2 at both ends thereof. Here, the supply path P1 may be in a state of communicating with the inside of the object to be polished 10 through one end of the object 10 to be polished. The discharge path P2 may be in communication with the inside of the object to be polished 10 through the other end of the object 10 to be polished. At this time, the supply path P1 forms a supply path for supplying the fluid to the inside of the object to be polished 10, and the discharge path P2 forms a discharge path through which the fluid from the object to be polished 10 is discharged.

On the other hand, the hot water supply part 110 provides hot water for heating the object to be polished. The hot water supply unit 110 is connected to the supply path P1 by the hot water supply path P3 so that hot water can be supplied to the inside of the object to be polished 10 through the supply path P1.

At this time, the temperature of the hot water may be approximately 80 to 120 ° C, and the inner surface of the object to be polished 10 may be heated by hot water to a proper temperature for polishing, and may be cleaned. That is, on the inner surface of the object to be polished 10, extruded oil and particles flowing in the extrusion process and the cutting process for forming the object 10 to be polished may exist, And particles can be removed.

The polishing liquid supply unit 120 supplies the polishing liquid. The polishing liquid supply unit 120 is connected to the supply path P1 by the polishing liquid supply path P4 so that the polishing liquid is supplied to the inside of the object to be polished 10 through the supply path P1. At this time, the abrasive liquid may be a polishing liquid containing phosphoric acid (H 3 PO 4) and nitric acid (HNO 3), or an abrasive liquid containing phosphoric acid, nitric acid and sulfuric acid (H 2 SO 4).

For example, the polishing liquid may be composed of 70 to 90 vol% of phosphoric acid, 1 to 10 vol% of nitric acid, and 1 to 5 vol% of sulfuric acid. In order to prevent generation of pits in the polishing target 10 in the polishing process, 0.01 to 0.1 vol% of [(NH3) 2 CO] and 0.001 to 0.1 vol% of glycerin may be added.

Accordingly, the inner surface of the object to be polished 10 is prevented from being pit-formed by the polishing liquid supplied from the polishing liquid supply unit 120 and can be polished. At this time, the polishing liquid supplied to the object 10 to be polished is discharged to the discharge path P2 to the polishing liquid supply unit 120 by the polishing liquid recovery path P10. Here, the polishing liquid is supplied to the inner surface of the object 10 to be polished by a pump provided in the polishing liquid supply path P4, and circulated for approximately one to five minutes.

The oxide film removing solution supply unit 130 supplies the oxide film removing solution. The oxide removing liquid supply part 130 is connected to the supply path P1 by the oxide film removing liquid supply path P5 so that the oxide film removing liquid is supplied to the inside of the object to be polished 10 through the supply path P1. At this time, a solution containing citric acid in an amount of approximately 1 to 30 vol% may be used for chemical cleaning by removing the oxide film on the inner surface of the polished object 10 to be polished.

The oxide film removing liquid supplied to the object to be polished 10 can be improved and cleaned by the oxide film removing liquid supplied from the oxide film removing liquid supplying part 130. At this time, the oxide film removing liquid supplied to the object to be polished 10 is connected to the discharge path P2 And can be recovered to the oxide film remover supply part 130 by the oxide film remover solution recovery path P11. Here, the oxide film removing liquid can be supplied and recovered by a pump provided in the oxide film removing liquid feed path P5.

On the other hand, the cleaning liquid supply unit 140 provides a cleaning liquid. The cleaning liquid supply unit 140 is connected to the supply path P1 by the cleaning liquid supply path P6 so that the cleaning liquid is supplied to the inside of the object to be polished 10 through the supply path P1. At this time, the cleaning liquid can clean the contamination on the inner surface of the object 10 and general water such as ionized water can be used.

And the gas supply unit 150 provides gas. The gas supply unit 150 is connected to the supply path P1 by the gas supply path P7 so that the gas is supplied to the inside of the object to be polished 10 through the supply path P1. At this time, the gas can clean the contamination on the inner surface of the object to be polished 10, and can perform the drying treatment on the object 10 to be polished.

On the other hand, the detection unit 160 senses the abrasive liquid and the oxide film remover that can remain inside the abrading object 10 after the polishing process is completed. The detection unit 160 may be connected to the supply path P1 by the detection path P8 and may be connected to the polishing target 10 based on at least one of the conductivity of the cleaning liquid discharged from the polishing target 10 and hydrogen ions. And the supply path (P1). The detection unit 160 may be provided to include at least one of a conductivity meter and a hydrogen ion meter.

A plurality of valves V1 to V20 are provided on the flow paths P1 to P11 to open and close the flow paths P1 to P11, respectively. However, this embodiment shows that the first to twentieth valves V1 to V20 are provided on the flow paths P1 to P11, but this is an embodiment for explaining the present embodiment, .

The supply units 110 to 150 may be made of a metal container including a Teflon resin or a lead-lined container which can easily control the temperature and have rigidity at a high temperature acid, Can be provided so as to collect the generated gas. In addition, the flow paths P1 to P11 and the plurality of valves V1 to V20 may also be provided with a Teflon resin capable of stiffness to a high-temperature acid.

Hereinafter, the polishing method according to the present embodiment will be described in detail.

3 is a flowchart showing a polishing processing method according to the present embodiment.

As shown in FIG. 3, in the polishing method according to the present embodiment, a heating process for the object to be polished 10 may be performed (S10). In the heating process for the object to be polished 10, the object to be polished 10 is heated by hot water supplied from the hot water supply unit 110.

To this end, the hot water supply unit 110 is connected to the first and second valves V1 and V2 of the hot water supply path P3, the third and fourth valves V3 and V4 of the supply path P1, The hot water is supplied while the fifth and sixth valves V5 and V6 of the second passage P2 are opened. The hot water is supplied to the inner side of the object to be polished 10 to allow the object to be polished 10 to be cleaned and heated and the hot water discharged from the object 10 to be polished later to the outside of the processing apparatus 100 through the discharge path P2 .

Thereafter, a polishing process is performed on the object 10 to be polished (S20). In the heating process for the abrasive article 10, the inner surface of the abrasive article 10 is polished by the abrasive liquid supplied from the abrasive liquid supply part 120.

To this end, first, the polishing liquid supply unit 120 is provided with the seventh and eighth valves V7 and V8 of the polishing liquid supply path P4, the third and fourth valves V3 and V4 of the supply path P1, The ninth and tenth valves V9 and V10 of the main recovery passage P9 connected to the discharge passage P2 and the eleventh and twelfth valves V11 and V12 of the polishing liquid recovery passage P10 are opened The polishing liquid is supplied.

The abrasive liquid is supplied to the inside of the abrasive article 10 to polish the inner surface of the abrasive article 10 and the abrasive liquid discharged from the abrasive article 10 is recovered to the abrasive liquid supply part 120 . At this time, the polishing liquid can be circulated for about 1 to 5 minutes by the pump provided in the polishing liquid supply path P4.

Thereafter, the first cleaning process for the object to be polished 10 is performed (S30). In the first cleaning step for the object to be polished 10, the inner surface of the object to be polished 10 is cleaned by the cleaning liquid supplied from the cleaning liquid supply part 140.

The seventh and eighth valves V7 and V8 of the opened polishing liquid supply path P4 and the third valve V3 of the supply path P1 are closed in the first cleaning step, The seventeenth valve V17 of one of the cleaning liquid supply paths P6 and the fifth and sixth valves V5 and V6 of the discharge path P2 are opened.

At this time, the fourth valve V4 of the supply path P4, the ninth and tenth valves V9 and V10 of the main recovery part P9, and the eleventh and twelfth valves of the polishing liquid recovery path P10 V11 and V12 are open. The cleaning liquid cleans the polishing liquid remaining in the object 10 through the supply path P1 and discharges it to the outside of the processing apparatus 100 as well as the polishing liquid recovery path P10, 120 to the outside. When the polishing process is completed, the seventeenth valve V17 of the cleaning liquid feed path P6 and the fifth and sixth valves V5 and V6 of the discharge path P2 are closed.

Thereafter, an oxide film removing process for the object to be polished 10 is performed (S40). The oxide film formed on the inner surface of the object to be polished 10 is removed or improved by the oxide film removing liquid supplied from the oxide film removing liquid supplying unit 130 in the oxide film removing process for the object to be polished 10.

The oxide film removing solution supply unit 130 supplies the 13th and 14th valves V13 and V14 of the oxide film remover supply path P5 and the 9th and 10th valves V9 and V10 of the main recovery channel P9, And the fifteenth and sixteenth valves V15 and V16 of the oxide film removal liquid recovery passage P11 are opened. The oxide film removing liquid is supplied to the inner side of the object to be polished 10 to remove or improve the oxide film on the inner surface of the object to be polished 10 and the oxide film removing liquid discharged from the object to be polished 10 is supplied to the oxide film removing liquid supplying unit 130 .

At this time, the oxide film remover can be circulated for about 5 to 30 minutes by the pump provided in the oxide film remover supply path P5. When the oxide film removing process is completed, the thirteenth and fourteenth valves V13 and V14 of the oxide film remover supply path P5 are closed and the fifth and sixth valves V5 and V6 of the discharge path P2 are opened do.

Thereafter, the second cleaning process for the object to be polished 10 is performed (S50). In the second cleaning step for the object to be polished 10, the inner surface of the object to be polished 10 is cleaned by the cleaning liquid supplied from the cleaning liquid supply unit 140.

To this end, the cleaning liquid supply unit 140 supplies the cleaning liquid in a state where the seventeenth valve V17 of the cleaning liquid supply path P6 and the fourth valve V4 of the supply path P1 are opened. At this time, the ninth and tenth valves V9 and V10 of the main recovery passage P9 and the fifteenth and sixteenth valves V15 and V16 of the oxide film remover recovery passage P11 may be in the open state. The cleaning liquid cleans the oxide film remover remaining on the object 10 through the supply path P1 and discharges the oxide film remover to the outside of the processing apparatus 100. The cleaning liquid cleans the oxide film remover P11, 130 to the outside.

Thereafter, a third cleaning process and a detection process for the object 10 to be polished are performed (S60). At this time, the seventeenth valve (V18) of the divided cleaning liquid supply path is opened while the seventeenth valve (V17) is closed, so that the inner surface of the object to be polished (10) can be cleaned.

In addition, the nineteenth valve V19 of the gas supply path P7 is repeatedly opened and closed to supply a gas toward the object to be polished 10 to remove the polishing liquid and the oxide film removing liquid which can remain inside the object to be polished 10 . At this time, the detection unit 160 detects the polishing rate of the polishing target 10 by polishing at least one of the conductivity and the hydrogen ion concentration of the cleaning liquid discharged from the polishing target 10 as the twentieth valve V20 of the detection path P8 connected to the discharge path P2 is opened. The cleaning state of the object 10 can be confirmed. At this time, if the contamination of the object to be polished 10 is detected, the cleaning operation can be performed again.

Thereafter, the drying process for the object to be polished 10 is performed (S70). At this time, the gas supply unit 150 may supply the gas to the inside of the object to be polished 10 in a state where the 19th valve V19 of the gas supply path P7 is open, so that the object 10 to be polished may be dried.

Therefore, the polishing apparatus and the polishing method can perform the polishing process on the inner diameter of the object to be polished, particularly, the object having a narrow gap, which is provided in the form of a pipe, so that the polishing apparatus can be applied in various polishing processes.

Further, since the polishing apparatus and the polishing method do not require a chemical tank, the manufacturing cost for the polishing apparatus can be reduced, and the minimum polishing liquid can be used to reduce the waste of the polishing liquid.

Meanwhile, the present embodiment describes that the processes are sequentially performed, but the order of the processes may be changed depending on the process, and it is also possible that some processes in the process are added or excluded.

One embodiment of the invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

10: object to be polished 100: chemical polishing machine
110: Hot Water Supply Unit 120: Polishing Liquid Supply Unit
130: Oxide film removing liquid supply unit 140: Cleaning liquid supply unit
150: gas supply unit 160:

Claims (15)

A supply path connected to the inside of the pipe-shaped object to be polished;
An abrasive liquid supply unit for supplying the abrasive liquid to the inside of the object to be polished through the supply path to polish the inner surface of the object to be polished;
A discharge passage communicating with the object to be polished to form a discharge path of the polishing liquid from the object to be polished;
A cleaning liquid supply unit for supplying a cleaning liquid for cleaning the supply path and the object to be polished;
A cleaning liquid supply path connecting the supply path and the cleaning liquid supply section to supply the cleaning liquid from the cleaning liquid supply section to the supply and the inside of the object to be polished;
A detection unit for detecting a cleaning state of the object to be polished and the supply path based on at least one of conductivity and hydrogen ion concentration of the cleaning liquid discharged to the discharge path; And
And a detection path connecting the discharge passage and the detection section.
The method according to claim 1,
Further comprising a polishing liquid recovery passage for connecting the discharge passage and the polishing liquid supply section so that the polishing liquid is recovered to the polishing liquid supply section.
The method according to claim 1,
A hot water supply unit for supplying hot water for heating the object to be polished; And
Further comprising a hot water supply path connecting the supply path and the hot water supply unit to supply the hot water from the polishing supply unit to the inside of the object to be polished.
The method according to claim 1,
An oxide film removing liquid supply unit for supplying an oxide film removing liquid for removing an oxide film on the inner surface of the object to be polished; And
Further comprising an oxide film removing liquid supply path connecting the supply path and the oxide film removing liquid supply section to supply the oxide film removing liquid from the oxide film removing liquid supply section to the inside of the object to be polished.
5. The method of claim 4,
Further comprising an oxide film removing liquid recovery path for connecting the discharge path and the oxide film removing liquid supply unit so that the oxide film removing liquid is recovered to the oxide film removing liquid supply unit.
delete delete The method according to claim 1,
A gas supply unit for supplying a gas supplied to the inside of the object to be polished; And
Further comprising a gas supply path connecting the supply path and the gas supply section to supply the gas from the gas supply section to the inside of the object to be polished.
A polishing liquid supply step of supplying a polishing liquid to the inside of the object to be polished through a supply path connected to the inside of the pipe-shaped object to be polished;
A polishing step in which the inner surface of the object to be polished is polished by the polishing liquid;
A polishing liquid discharging step of discharging the polishing liquid from the object to be polished through a discharge passage communicated with the object to be polished;
A first cleaning step in which a cleaning liquid is supplied to the inside of the object to be polished through the supply path, and the polishing liquid remaining inside the object to be polished is cleaned;
Removing the oxide film on the inner surface of the object to be polished by supplying the oxide film removing liquid to the inside of the object to be polished through the supply path;
A second cleaning step in which the cleaning liquid is supplied to the inside of the object to be polished through the supply path to clean the oxide film remover remaining inside the object to be polished; And
And a detecting step of detecting the cleaning state of the object to be polished based on at least one of the conductivity and the hydrogen ion concentration of the cleaning liquid supplied from the cleaning liquid to the inside of the object to be polished through the supply path and discharged from the object to be polished Polishing method.
10. The method of claim 9,
Before the polishing liquid supply step,
Further comprising supplying hot water to the inside of the object to be polished through the supply path to heat the object to be polished.
delete delete delete delete 10. The method of claim 9,
After the detecting step,
Further comprising a drying step of supplying the gas to the inside of the object to be polished through the supply path and drying the object to be polished.

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