KR101522239B1 - Liquid crystal display device and repairing method thereof - Google Patents

Abstract

The present invention relates to a liquid crystal display device for illuminating a unit pixel with a redundant conductive pattern formed by overlapping a part of a gate line and a pixel electrode in a case where a defective unit pixel occurs due to a point defect in a liquid crystal display of a storage oncommon structure, A plurality of gate wirings formed on the glass substrate in parallel with each other; A plurality of data lines formed to cross the gate lines; A thin film transistor formed at a crossing region of the gate wiring and the data wiring; A pixel electrode formed in a unit pixel region defined by the gate wiring and the data wiring; A storage electrode formed in the unit pixel region and overlapping the pixel electrode; A repair wiring connected to the storage electrode and formed in an edge region of the unit pixel; And a redundant conductive pattern partially overlapped on the upper side of the gate wiring and the repair wiring.

Storage on common, repair wiring, redundancy pattern

Description

TECHNICAL FIELD [0001] The present invention relates to a liquid crystal display device and a method of repairing the liquid crystal display device,

1 is a schematic plan view showing a TFT array substrate of a conventional liquid crystal display device

2 is a plan view showing a unit pixel in a TFT array substrate having a conventional storage ON common structure

3 is a view showing a structure of a TFT array substrate according to a first embodiment of the present invention

4 is a plan view showing unit pixels in a TFT array substrate having the storage on-common structure of Fig.

5 is a sectional view of the TFT taken along the cutting line I-I '

6 is a cross-sectional view of the repair wiring taken along the cutting line II-II '

7 is a schematic plan view showing a TFT array substrate of a liquid crystal display device according to a second embodiment of the present invention

8 is a plan view showing a unit pixel in the TFT array substrate having the storage on-common structure of Fig. 7

9 is a cross-sectional view of the redundancy conductive pattern taken along the line III-III '

10 is a view showing a liquid crystal display device having the TFT array substrate of Fig. 9

11 is an equivalent circuit diagram between the defective pixel electrode formed on the TFT array substrate of Fig. 10 and the common electrode of the color filter substrate

DESCRIPTION OF REFERENCE NUMERALS

200: substrate 202: gate wiring

204: data wiring 214: pixel electrode

220: storage wiring 220a: repair wiring

230: Common voltage wiring 231: Redundant conductive pattern

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display and a repair method for the liquid crystal display, and more particularly, to a liquid crystal display having a storage on common structure, , A liquid crystal display device for black pointing a unit pixel using a redundancy conductive pattern formed by overlapping a part of a gate line and a pixel electrode, and a repair method for the liquid crystal display device .

In general, a liquid crystal display device includes a plurality of thin film transistors (hereinafter referred to as " thin film transistors ") each having a unit pixel region defined by a plurality of gate lines and data lines crossing each other on a glass substrate and distributed in a matrix form at intersections of the gate lines and the data lines , A TFT array substrate on which TFTs are formed, a color filter substrate on which a plurality of color filters are formed in a one-to-one correspondence with the unit pixels of the TFT array substrate, and a liquid crystal filled between the TFT array substrate and the color filter substrate .

Among these, FIG. 1 is a view showing a structure of a TFT array substrate.

1, the TFT array substrate 10 includes a plurality of gate wirings 4 formed in a lateral direction on a substrate, and a plurality of data wirings 4 arranged orthogonally to the gate wirings 4 A pixel electrode 14 formed in a unit pixel region defined by intersecting the gate wiring and the data wiring, a pixel electrode 14 formed in a unit pixel region defined by intersecting the gate wiring and the data wiring, And a storage capacitor (not shown) for holding a signal applied from the data wiring.

In the above structure, a method of forming a storage capacitor in a liquid crystal display device is classified into a storage on gate method and a storage on-common method. Here, the storage-on-gate structure is such that the storage capacitor is formed in a certain region of the gate wirings, whereas the storage-on-common structure is such that separate storage wirings are formed in the liquid crystal cell and a storage capacitor is formed in a certain region of the storage wirings it means.

Hereinafter, a liquid crystal display having the storage on-common structure will be described with reference to the accompanying drawings.

2 is a diagram showing a planar structure of a TFT array substrate with respect to a unit pixel of a liquid crystal display device having a storage-on-common structure.

As shown in Fig. 2, the gate wirings 4 are uniformly spaced on the substrate and arranged in the lateral direction, and the data wirings 2 are uniformly spaced and arranged in the longitudinal direction. Through this, the gate wiring 4 and the data wiring 2 are arranged in a matrix form. At this time, the liquid crystal cells are located at intersections of the data lines 2 and the gate lines 4, and TFTs and pixel electrodes 14 are provided in each liquid crystal cell. A storage wiring 3 formed between the gate wirings 4 and spaced apart from the gate wirings 4 by a predetermined distance is provided.

The TFT includes a gate electrode 10 connected to the gate wiring 4 and a source electrode 8 extending from the data wiring 2 and overlapping a predetermined region with the gate electrode 10, And a drain electrode 12 formed at a position corresponding to the source electrode 8 with respect to the gate electrode 10.

The pixel electrode 14 is formed in the entire region of the liquid crystal cell where no TFT is formed and electrically connected to the drain electrode 12 through the drain contact hole 16 formed on the drain electrode 12 of the TFT .

In the region where the storage interconnection lines 3 of the liquid crystal cell are formed, the pixel electrode 14 and the storage interconnection lines 3 overlap each other with an insulating film (not shown) interposed therebetween to function as a storage capacitor.

According to the above structure, a gate signal is applied to each gate wiring 4 to turn on the channel of the TFT formed on the gate wiring 4. While the TFT is turned on, a data signal is applied to the TFT, . At this time, the voltage applied to the pixel electrode 14 forms a storage capacitor together with the storage wiring 3 located below. That is, the storage capacitor plays a role of holding a signal while the signal is not applied to the pixel electrode 14.

However, such a liquid crystal display device may fail to function as a storage capacitor due to line defects such as disconnection or short-circuit of the storage interconnection formed in the unit pixel during its manufacture.

In addition, a phenomenon such as a defective spot occurs due to point defects such as particles existing in a unit pixel during the manufacturing process.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a repair wiring for repairing a storage wiring formed in a unit pixel and a repair wiring for repairing a defective spot defect caused by a point defect of a unit pixel. And a redundancy conductive pattern for electrically connecting the unit pixel and the gate wiring to each other so as to make the unit pixel and the gate wiring electrically connected to each other, and a repair method for the liquid crystal display device.

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A liquid crystal display device according to an embodiment of the present invention includes a gate wiring, a data wiring, a thin film transistor, a pixel electrode, a storage wiring, a repair wiring, and a redundancy conductive pattern. The redundant conductive pattern partially overlaps the gate wiring, the pixel electrode, and the repair wiring, and the gate wiring and the redundant conductive pattern are electrically connected to one side and the other side of the redundant conductive pattern, respectively, and the gate voltage is applied to the pixel electrode .

Hereinafter, the configuration will be described in detail with reference to the drawings.

FIG. 3 is a view schematically showing a structure of a TFT array substrate according to a first embodiment of the present invention, and FIG. 4 is a plan view showing a unit pixel in a TFT array substrate having the storage on-common structure of FIG.

3 and 4, the TFT array substrate 100 includes a plurality of gate wirings 102 formed in a lateral direction, and a plurality of data wirings 102 arranged orthogonally to the gate wirings 102 And a pixel electrode 114 formed in a unit pixel region defined by intersecting the gate wiring 102 and the data wiring 104. The pixel electrode 114 is formed in a crossing region of the gate wiring 102 and the data wiring 104, A storage capacitor (unrepresented) for holding a signal applied from the data wiring for a predetermined time, and a repair wiring 120a connected to the storage capacitor and formed as an edge region of the unit pixel.

The TFT is formed in a corner area near the intersection of the gate wiring 102 and the data wiring 104. The detailed structure of the TFT is a gate electrode 102a connected to the gate wiring 102, A source electrode 104a extending over the gate electrode 102a and overlapping a predetermined region with the gate electrode 102a and a drain electrode 104a formed at a position corresponding to the source electrode 104a with respect to the gate electrode 102a 104b.

The pixel electrode 114 is formed in the entire region of the liquid crystal cell where no TFT is formed and electrically connected to the drain electrode 104b through the drain contact hole 116 formed on the drain electrode 104b of the TFT .

The storage capacitor includes a storage wiring 120 formed between the gate wirings 102 in the liquid crystal cell and spaced apart from the gate wirings 102 by a predetermined distance, And a pixel electrode 114 formed on the upper side of the pixel electrode 114. At this time, the storage capacitor 120 overlaps the pixel electrode 114 with a dielectric layer (not shown) interposed therebetween and functions as a storage capacitor 118.

The repair wiring 120a is connected to the storage wiring 120 and is formed in an edge region of the unit pixel. More specifically, in order to prevent the parasitic capacitance from overlapping with the gate wiring 102 and the data wiring 104 which define the unit pixel region, the gate wiring 102 and the data wiring 104, It is preferable that a repair wiring 120a is formed on the edge of the four sides.

Accordingly, the shape of the repair wiring 120a is similar to the shape of the unit pixel defined by the gate wiring 102 and the data wiring 104. For example, when the unit pixel has a rectangular shape, the repair wiring 120a has a rectangular frame shape. Or the shape of the unit pixel is circular, the repair wiring 120a has a round shape. Alternatively, the repair wiring 120a may be formed in a "C" shape so that the opening portion is located on the upper side of the unit pixel.

4, a plurality of storage electrodes are formed in a unit pixel, so that the repair wiring 120a also functions as a redundant storage capacitor for replacing the storage wiring 120. FIG.

A voltage is applied to the storage wiring 120 and the repair wiring 120a through the common voltage wiring 130 formed on the outermost edge regions of both sides of the TFT array substrate 100. [

For example, as shown in FIG. 4, when the storage capacitor (unrepresented) located at the lower end of the unit pixel becomes unable to operate normally due to factors such as line defect, the storage capacitor The signal from the data line 104 can be maintained for a certain period of time.

In addition, the repair wiring 120a of the present invention can be used as a means for igniting a defective unit pixel to solve the deficiency problem caused by a point defect in the unit pixel.

In the case of a normally white mode of a TN (Twisted Nematic) liquid crystal panel in order to ignite a defective unit pixel, the TFT array substrate (hereinafter, referred to as a lower panel) and the color filter The common voltage wiring 130 formed on the substrate (hereinafter referred to as the upper plate) is electrically isolated.

The common voltage wiring 130 on the lower plate, that is, the repair wiring 120a and the pixel electrode 114 located on the upper side of the repair wiring 120a are electrically connected by laser welding or the like.

Then, when the ground voltage is applied to the common voltage wiring 130, the liquid crystal is twisted due to the potential difference between the ground voltage applied to the pixel electrode 114 through the repair wiring 120a and the common voltage of the upper plate, .

The contrast ratio of such a liquid crystal display device is defined as a ratio of light transmittance in black and white. Specifically, the contrast ratio and voltage of light when the voltage is zero in the liquid crystal layer are sufficiently applied to the liquid crystal layer Quot; means the ratio of the light transmittance in the " as-is " state.

Therefore, the normally white mode is a liquid crystal panel which is black when the voltage is zero and the screen is white when the voltage is zero. In the normally black mode, the relation of the black and white display is opposite to the normally white mode Panel.

5 is a cross-sectional view of the TFT taken along the cutting line I-I 'in Fig.

As shown in FIG. 5, a gate electrode 102a is formed on a substrate 100, and a gate insulating film 113 is formed on a front surface of the substrate 100 including the gate electrode 102a. At this time, the gate electrode 102a is formed and connected to the gate wiring when the gate wiring is formed.

A semiconductor layer 134 made of amorphous silicon and an ohmic contact layer 136 made of n + amorphous silicon doped with phosphorus (P) at high concentration are stacked on the gate insulating film 113 on the gate electrode 102a An active layer is formed.

In addition, the source electrode 104a and the drain electrode 104b are patterned so as to face each other with a constant spacing therebetween on the active layer.

The ohmic contact layer 136 formed on the semiconductor layer 134 in the region where the source electrode 104a and the drain electrode 104b are spaced apart is removed in the process of patterning the source electrode 104a and the drain electrode 104b. At this time, the exposed semiconductor layer 134 with the ohmic contact layer 136 removed is defined as the channel region of the TFT.

A protective layer 138 is formed on the entire surface of the exposed substrate 100 including the source electrode 104a and the drain electrode 104b. The protective layer 138 may be formed of an inorganic insulating layer such as silicon nitride (SiNx) or silicon oxide (SiOx). In order to improve the aperture ratio of the liquid crystal display device, benzocyclobutene (BCB) An organic insulating film such as spin on glass or acrylic can be applied.

A contact hole 116 is formed in the passivation layer 138 to expose a portion of the drain electrode 104b.

A pixel electrode 114 is formed on the passivation layer 138 and the pixel electrode 114 and the drain electrode 104b are electrically connected through the contact hole 116.

6 is a sectional view of the repair wiring taken along the cutting line II-II 'of FIG.

The repair wiring 120a is patterned on the substrate 100 and the gate insulating film 130 is formed on the front surface of the substrate 100 including the repair wiring 120a. Here, the repair wiring 120a is simultaneously patterned with the same material as the gate wiring and the storage wiring, and is formed perpendicular to the gate wiring and the storage wiring in the unit pixel region.

A protective film 138 is formed on the gate insulating film 113. At this time, since the protective film 138 is formed simultaneously with the formation of the protective film 138 shown in FIG. 5, the protective film 138 is located on the same layer.

A pixel electrode 114 is formed on the inner protective layer 138 of the repair wiring 120a.

In the TN liquid crystal panel shown in FIG. 3, a ground voltage is continuously (or always) applied to the lower panel in order to ignite defective pixels. As a result, the liquid crystal is operated by the potential difference between the common voltage of the upper plate and the ground voltage of the lower plate even in the normal pixels except the defective pixel, and as a result, normal black can not be implemented in the liquid crystal panel as a whole due to deterioration of the liquid crystal It may be unstable in terms of reliability.

FIG. 7 is a schematic plan view showing a TFT array substrate of a liquid crystal display device according to a second embodiment of the present invention for solving the above problems, FIG. 8 is a cross-sectional view of a unit in a TFT array substrate having a storage on- Fig.

7 and 8, the TFT array substrate 200 includes a plurality of gate wirings 202 formed in a lateral direction on a substrate, a plurality of gate wirings 202 arranged in a longitudinal direction orthogonal to the gate wirings 202 A data line 204 and a TFT formed in a crossing region of the gate line 202 and the data line 204 and a pixel formed in a unit pixel region defined by crossing the gate line 202 and the data line 204 A storage capacitor (unrepresented) for holding a signal applied from the data line for a predetermined period of time, a repair wiring 220a connected to the storage capacitor and formed as an edge region of the unit pixel, And a redundant conductive pattern 231 formed by partially overlapping the repair wiring 220a facing the wiring and the gate wiring.

The TFT is formed in an edge region near the intersection of the gate wiring 202 and the data wiring 204. The detailed structure of the TFT is a gate electrode 202a connected to the gate wiring 202, A source electrode 204a extending over the gate electrode 202a and overlapping a predetermined region with the gate electrode 202a and a drain electrode 204a formed at a position corresponding to the source electrode 204a with respect to the gate electrode 202a 204b.

The pixel electrode 214 is formed in the entire region of the liquid crystal cell where no TFT is formed and electrically connected to the drain electrode 204b through the drain contact hole 216 formed on the drain electrode 204b of the TFT .

The storage capacitor includes a storage wiring line 220 formed between the gate wiring lines 202 in the liquid crystal cell and spaced apart from the gate wiring line 202 by a predetermined distance, And a pixel electrode 214 formed on the upper side of the pixel electrode 214. At this time, the storage capacitor 218 overlaps the pixel electrode 214 with an insulating film (not shown) interposed therebetween in a certain region of the storage wiring 220.

The repair wiring 220a is connected to the storage wiring 220 and is formed in an edge region of the unit pixel. More specifically, in order to prevent the parasitic capacitance from overlapping with the gate wiring 202 and the data wiring 204 defining the unit pixel region, the gate wiring 202 and the data wiring 204, It is preferable that a repair wiring 220a is formed on the edge of the four sides.

A common voltage is applied to the storage wiring 220 and the repair wiring 220a through the common voltage wiring 230 formed on the outermost edge regions of both sides of the TFT array substrate 200. [

The redundancy conductive pattern 231 is a redundancy conductive pattern for disabling the storage wiring 220 and the repair wiring 220a provided in the region of the defective pixel when the defective pixel of the liquid crystal panel is generated, a part of the gate wiring 202 and the defective pixel overlap each other.

The redundancy conductive pattern 231 is formed so that the gate wiring 202 for controlling the unit pixel, that is, the gate voltage is applied and the TFT is turned on so that the data signal can be applied to the pixel electrode 214 And the repair wirings 220a formed in the edge regions of the pixel electrodes 214 facing the gate wirings 202. The gate wirings 202 are formed to overlap with the gate wirings 202, At this time, the redundancy conductive pattern 231 is formed simultaneously with the pattern of the data line 204 or the source electrode 204a and the drain electrode 204b.

In the above structure, the redundancy conductive pattern 231 is used as the dark ignition means of the defective unit pixel to improve the defocus problem caused by the point defect of the unit pixel.

A brief description of the method of igniting the cancer is as follows.

In the normally white mode of the TN liquid crystal panel of the present invention, in order to ignite the defective unit pixel, the common voltage is not applied to the storage wiring 220 on the lower plate and the repair wiring 220a provided in the defective unit pixel The storage wiring 220 and the repair wiring 220a are cut with a laser at a position where the gate wiring 202 and the data wiring 204 intersect with each other, The connection of the channel part is cut off using a laser to break the electrical connection. This corresponds to the first to fifth cuts in Fig.

One side of the redundant conductive pattern 231 is connected to the redundant conductive pattern 231 by performing laser welding on the redundant conductive pattern 231 overlapped with the gate wiring 202 and the repair wiring 220a The wiring 202 and the other side thereof are electrically connected to the pixel electrode 214, respectively.

As a result, the gate voltage applied through the gate wiring 202 of the lower plate is applied to the pixel electrode 214 through the redundancy conductive pattern 231, and by the gate voltage, that is, the divided potential difference between the pixel voltage and the common voltage of the top plate The liquid crystal is twisted to maintain the black state. I will deal with the principle of partial pressure later.

9 is a cross-sectional view of the redundancy conductive pattern taken along the line III-III 'in FIG.

The gate wiring 202 and the repair wiring 220a are simultaneously patterned on the substrate 200 and the front surface of the substrate 200 including the gate wiring 202 and the repair wiring 220a A gate insulating film 230 is formed.

A redundant conductive pattern 231 is formed on the gate insulating film 230 simultaneously with formation of a source line and a drain electrode (not shown) of a data line (not shown) and a TFT (not shown). At this time, the redundant conductive pattern 231 overlaps with the gate wiring 202 at one side and partly overlaps with the repair wiring 220a or the storage wiring 220 at the other side.

A protective layer 238 is formed on the redundant conductive pattern 231 and the gate insulating layer 230. At this time, since the protective film 238 shown in FIG. 9 is formed simultaneously with the formation of the protective film 138 shown in FIG. 5, the protective film 238 is also located in the same layer.

A pixel electrode 214 is formed on the protective layer 238.

10 is a liquid crystal display device having the TFT array substrate of Fig.

10, in the liquid crystal display device, a plurality of gate wirings and data wirings cross each other and are arranged in a matrix form. When a defective pixel is generated, the TFT array having the redundant conductive pattern formed to ignite the defective pixel A color filter substrate 400 including a color filter layer corresponding to a unit pixel of the TFT array substrate 300 in a one-to-one correspondence with the color filter substrate 400 and a color filter substrate 400 filling the space between the TFT array substrate 300 and the color filter substrate 400 And a liquid crystal panel composed of a first polarizer 350 positioned on the outer side of the TFT array substrate 300 and a second polarizer 450 located on the outer side of the color filter substrate do.

Of course, the above liquid crystal is a negative liquid crystal in which the dielectric constant of the liquid crystal long axis is smaller than the dielectric constant of the liquid crystal short axis. The negative liquid crystal has such a property that when the electric field is applied to the liquid crystal, the long axis of the liquid crystal is arranged to be parallel to the electric field direction. When an electric field is not applied, the liquid crystal is arranged in parallel to the direction in which the long axis is placed on the polarizing plate.

The first polarizing plate 350 and the second polarizing plate 450 are arranged so that their polarizing directions are perpendicular to each other. Light provided from a backlight (not shown) located below (or one side of) the first polarizing plate 350 of the liquid crystal panel is polarized by the first polarizing plate 350 and passes through the liquid crystal layer 500 to be incident on the second polarizing plate 450). At this time, if the liquid crystal is arranged in parallel with the polarizing plate, the liquid crystal generates a phase difference with the polarized light so that light passing through the first polarizing plate 350 can pass through the second polarizing plate 450, The liquid crystal does not generate a phase difference with respect to light, so that the light having passed through the first polarizing plate 350 is blocked by the second polarizing plate 450 to exhibit a black state.

In the above structure, for example, in order for the defective pixel on the TFT array substrate 300 to be ignited, the redundant conductive pattern overlapping on the gate wiring by laser welding is electrically connected, and at the same time, the redundant conductive pattern And the other side is electrically connected to the pixel electrode by laser welding so that the gate voltage is applied to the pixel electrode.

The liquid crystal is twisted by the potential difference between the gate voltage applied to the pixel electrode through the gate wiring on the TFT array substrate 300 and the common voltage applied to the common electrode on the color filter substrate 400, .

11 is an equivalent circuit diagram between the defective pixel electrode formed on the TFT array substrate of Fig. 10 and the common electrode of the color filter substrate.

11, the redundant conductive pattern on the TFT array substrate overlaps the repair wiring (or the storage wiring) with the gate insulating film therebetween, and is positioned below the pixel electrode. As a result, a parasitic capacitance Cst is generated between the repair wiring (or the storage wiring) and the redundant conductive pattern (or the defective pixel electrode), and between the defective pixel electrode on the TFT array substrate and the common electrode on the color filter substrate, (Clc).

At this time, the divided voltage applied across both ends of the parasitic capacitance Cst and the liquid crystal capacitance Clc can be expressed by the following equation.

Here, Vpxl is a pixel voltage, Vgl is a gate voltage, Vcom is a common voltage, Cst is a parasitic capacitance, and Clc is a liquid crystal capacitance.

The pixel voltage Vpxl, the gate voltage Vgl, the common voltage Vcom, and the liquid crystal capacitance Clc are substantially fixed in Equation (1). For example, the gate low voltage Vgl is fixed at -5V, the gate high voltage Vgh is fixed at 20V, the common voltage Vcom is unchanged at 8V, and the potential difference between the pixel voltage Vpxl and the common voltage Vcom There is a liquid crystal capacitor Clc having a preset liquid crystal which is twisted according to the following equation.

Therefore, the pixel voltage Vpxl here can be adjusted by adjusting the area of the portion where the redundancy conductive pattern overlaps with the repair wiring (or the storage wiring) between the repair wiring (or the storage wiring) on the TFT array substrate and the defective pixel electrode Can be changed.

On the basis of this, as the parasitic capacitance Cst changes, the potential difference between the pixel voltage Vpxl and the common voltage Vcom changes, and the liquid crystal is twisted by the potential difference therebetween and the dark state is ignited in the black state.

For example, assume that a gate-low voltage (Vgl) of -5 V is applied to the redundancy conductive pattern. At this time, if a pattern is formed so that a voltage of 5 V is applied to both ends of the parasitic capacitance Cst, the pixel voltage Vpxl will be OV. Accordingly, when the common voltage Vcom is 8V, the liquid crystal is twisted by the potential difference between the pixel voltage Vpxl of 0V and the common voltage Vcom of 8V, that is, 8V, and the black state is maintained.

On the other hand, assume that a 20V gate high voltage (Vgh) is applied to the redundancy conductive pattern. Also in this case, if a voltage of 5V is applied to both ends of the parasitic capacitance Cst as above, the pixel voltage Vpxl will be 15V. At this time, if the common voltage Vcom is 8V as described above, the liquid crystal is twisted by the potential difference between the pixel voltage Vpxl of 15V and the common voltage Vcom of 8V to become a black state.

Of course, such a method is merely an example, so it is not limited to the above numerical values. However, considering the general liquid crystal capacitance Clc, when the potential difference between the pixel voltage Vpxl and the common voltage Vcom is 5V or more, the liquid crystal is twisted to maintain a stable black state.

On the other hand, since the common voltage is applied to the upper and lower substrates except for the defective pixel at the same time, the potential difference does not occur. As a result, the liquid crystal is driven only by the pixel voltage and the common voltage applied through the data line, .

As a result of the above description, the present invention can replace a role as a storage capacitor due to a line defect by forming a repair wiring connected to a storage wiring in a unit pixel region. In addition, the repair wiring and the gate wiring are electrically connected to each other through the redundancy conductive pattern, thereby improving defective spot defects due to point defects.

Claims (12)

delete delete delete A plurality of gate wirings arranged on the substrate in parallel with each other; A plurality of data lines arranged to cross the gate lines; A thin film transistor provided at a crossing region of the gate line and the data line; A pixel electrode provided in a unit pixel region defined by the gate wiring and the data wiring; A storage wiring arranged horizontally with the gate wiring and having a predetermined region overlapping the pixel electrode in the unit pixel region to form a storage electrode; A repair line connected to the storage line and disposed at an edge of the unit pixel region; And And a redundancy conductive pattern partially overlapping the gate wiring, the pixel electrode, and the repair wiring, The gate wiring, the redundant conductive pattern, and the other side of the pixel electrode and the redundant conductive pattern are electrically connected to each other, and a gate voltage is applied to the pixel electrode. The liquid crystal display of claim 4, wherein the repair wiring is made of the same material as the storage wiring. The liquid crystal display of claim 4, wherein the repair wiring has a rectangular frame shape. The liquid crystal display of claim 4, wherein the redundant conductive pattern is made of the same material as the data line. The liquid crystal display of claim 4, wherein the redundant conductive pattern is disposed on the same layer as the data line. A storage line formed to be horizontal with respect to the gate line, a gate line connected to the storage line and formed at the edge of the unit pixel region, Preparing a TFT array substrate including a repair line and a redundancy conductive pattern formed by partially overlapping the gate line, the pixel electrode, and the repair line; Cutting the storage wiring and the repair wiring on the TFT array substrate in the unit pixel region and cutting the channel portion of the TFT; Performing a first welding on one side of the redundancy conductive pattern overlapping with the gate wiring to electrically connect the gate wiring and the redundancy conductive pattern; Performing a second welding on the other side of the redundancy conductive pattern overlapped with the pixel electrode and the pixel electrode to electrically connect the redundancy conductive pattern and the pixel electrode; And And applying a voltage to the gate line to apply a gate voltage to the pixel electrode. 10. The repairing method of a liquid crystal display device according to claim 9, wherein an insulating film is disposed between the gate wiring and the repair wiring and the redundancy conductive pattern. The method according to claim 9, wherein the cutting and welding is performed by a laser. 10. The repairing method of a liquid crystal display device according to claim 9, wherein the repair wiring where the redundancy conductive pattern overlaps is the storage wiring.

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