KR101513947B1 - Nitride semiconductor light emitting device and producing method of the same - Google Patents

Abstract

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same. A reflection structure is formed in the bottom side of an exposure groove to penetrate a part of an n-type semiconductor layer. Thereby, light emitted to the side of an active layer is reflected upwards so that light extraction efficiency can be improved. For this, the nitride semiconductor light emitting device, in a nitride semiconductor light emitting device which includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer which are successively stacked on a substrate, includes: an exposure groove which penetrates part of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer to expose part of the n-type semiconductor layer; and a reflection structure which is formed in the lower side of the exposure groove and has a narrow upper part and a wide lower part to reflect light emitted from the exposure groove in the side of the active layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a nitride semiconductor light emitting device,

More particularly, the present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a nitride semiconductor light emitting device and a method of manufacturing the same, To improve the light extraction efficiency and a method for manufacturing the same.

The nitride semiconductor such as AlGaNInN has a direct transition type energy structure and can control the energy bandgap from 0.66 eV (InN) to 6.2 eV (AlN) through the combination of Al, In, and Ga, And is used for a light-emitting element having a wide wavelength region from the light-emitting region to the region.

Typical applications of nitride-based semiconductors are full-color displays, traffic lights, general lighting, and light sources for optical communication equipment, and are applied in the form of ultraviolet light, white light emitting diodes, or laser diodes.

The nitride based light emitting device includes an active layer having a multiple quantum well structure located between n-type and p-type nitride semiconductor layers, and generates light by recombination of electrons and holes in the quantum well layer in the active layer.

1, a conventional semiconductor light emitting device includes a substrate 10, an n-type semiconductor layer 100, an active layer 200, a spacer layer 310 The hole injection layer 320, the electron blocking layer 330, the p-type semiconductor layer 400, the n-type metal layer 110, the p-type metal layer 410, the n-electrode 120, ).

Such a conventional light emitting device includes an active layer 200 having a multiple quantum well structure between the n-type semiconductor layer 100 and the p-type semiconductor layer 400 to improve the internal quantum efficiency, and the InGaN well The In content of the layer or the Al content of the AlGaN well layer can be controlled to emit light of a desired wavelength.

In addition, the electron blocking layer 330 is positioned between the p-type semiconductor layer 400 and the active layer 200 to block the electron overflow, thereby improving the light emitting recombination ratio.

On the other hand, a spacer layer 310 is formed on the active layer 200 and used as a buffer layer for forming the electron blocking layer 330.

In addition, a P-electrode 420 is formed on the transparent electrode layer 410 on the p-type semiconductor layer 400 so that current is uniformly dispersed in the p-type semiconductor layer 400.

When current is applied to the semiconductor light emitting device having the above-described structure, electrons and holes are provided from the n-type semiconductor layer 100 and the p-type semiconductor layer 400, respectively, and electrons and holes are recombined in the active layer 200 Light is generated.

At this time, the upper end of the p-type semiconductor layer 400 may have a rough surface or form a specific structure through dry etching, wet etching or lithography in order to increase extraction efficiency of generated light.

However, although the rough surface or the structures formed on the top of the p-type semiconductor layer 400 is effective for improving the light extraction for the light emitting in the surface direction, it is not effective for improving the light extraction efficiency of the light emitting element on the side .

For example, in a deep ultraviolet light emitting device grown in the (0001) plane direction, that is, a nitride semiconductor based light emitting device having a large Al composition, anisotropic light having strong side emission is generated, and therefore conventional surface roughening, There has been a problem that the improvement of the light extraction by the method is insignificant. In order to improve the light extraction efficiency and the external quantum efficiency, a new method different from the conventional one is required.

Registration No. 10-0696194 (Mar. 12, 2007)

In order to solve the above problems, it is an object of the present invention to provide a semiconductor light emitting device and a method of manufacturing the same, And to provide a nitride semiconductor light emitting device capable of enhancing extraction efficiency and a manufacturing method thereof.

According to an aspect of the present invention, there is provided a nitride semiconductor light emitting device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially stacked on a substrate, An exposed groove formed by etching a part of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer so as to be partially exposed; And a reflective structure provided on a bottom surface of the exposed groove, the reflective structure being configured to reflect light emitted from the exposed groove to the upper side on the side of the active layer.

Preferably, the reflective structure is adhered and fixed to the bottom surface of the exposure groove via an adhesive layer.

Preferably, at least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be provided on the surface of the reflective structure.

The metal reflective layer may include at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt.

Preferably, the reflective structure may be grown on the bottom surface of the exposure groove by a selective area growth method.

Preferably, the reflective structure may be grown by forming a dielectric layer on the bottom surface of the exposed groove, opening a part of the dielectric layer, and then growing the semiconductor layer.

Preferably, the dielectric layer formed on the bottom surface of the exposed groove may be made of at least one of SiO ₂ , SiO x, SiN, SiN x, Al ₂ O ₃ , and GaO.

Preferably, the opening shape of the dielectric layer may be formed in a shape of at least one of a strip shape, a circular shape, an elliptical shape, a polygonal shape, and a ring shape individually or in a row.

Preferably, at least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be provided on the surface of the reflective structure.

The metal reflective layer may include at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt.

Preferably, the metal reflection layer may be electrically connected to the n-type metal layer provided on the n-type semiconductor layer.

Preferably, the plurality of exposure grooves are formed in a strip shape extending from each other by a predetermined length, and the reflective structure is formed in a linear or island shape along the longitudinal direction of each of the exposure grooves. .

Preferably, the exposure groove includes at least one main exposure groove and a plurality of subexposure grooves extending from the main exposure groove, wherein the plurality of subexposure grooves extend in a predetermined length to form mutually spaced stripe patterns And the reflective structure may be formed along the longitudinal direction of at least one of the main exposure groove and the sub exposure groove.

Preferably, the plurality of exposure grooves are formed in an annular shape and are spaced apart from each other, and the reflective structure may be provided at the center of each of the exposure grooves.

Preferably, the exposure grooves include elongated line-shaped exposed grooves formed in mutually spaced stripes, and annular exposed grooves formed in an annular shape, wherein the reflective structure is formed along the longitudinal direction of the line- And may be provided at the center of the annular exposure groove.

Preferably, the reflective structure may be an n-type doped semiconductor layer.

Preferably, an n-type electrode for a structure is laminated on the surface of the reflective structure, and at least one layer of a metal reflective layer, an omni-directional reflector layer, and a distributed Bragg reflection layer may be deposited on the surface of the n-type electrode for the structure .

The metal reflective layer may include at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt.

Preferably, the n-type electrode for the structure may be electrically connected to the n-type metal layer provided on the n-type semiconductor layer.

Preferably, an electron blocking layer may be provided between the p-type semiconductor layer and the active layer.

According to another aspect of the present invention, there is provided a method of manufacturing a nitride semiconductor light emitting device, including: (a) sequentially laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate; (b) etching the part of the p-type semiconductor layer, the active layer and the n-type semiconductor layer to expose a part of the n-type semiconductor layer to form an exposure groove; And (c) forming a reflecting structure on the bottom surface of the exposed groove so as to reflect light emitted from the exposed groove to the upper side of the active layer.

Preferably, in the step (c), the reflective structure is adhesively fixed to the bottom surface of the exposed groove through an adhesive layer, or may be formed on the bottom surface of the exposed groove by selective growth growing method.

Preferably, at least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be formed on the surface of the reflective structure before adhering and fixing the reflective structure to the bottom of the exposure groove.

Preferably, before step (c), (pc1) forming an n-type metal layer on a part of the upper surface of the exposed n-type semiconductor layer; (pc2) forming a p-type metal layer on an upper surface of the p-type semiconductor layer; (pc3) forming an n-type electrode on an upper surface of the n-type metal layer, and forming a p-type electrode on an upper surface of the p-type metal layer, wherein the (pc1) The reflective structure may be adhesively fixed to the bottom surface of the exposure groove through the adhesive layer.

Preferably, after the step (c), (d) forming an n-type metal layer on a part of the upper surface of the exposed n-type semiconductor layer; (e) forming a p-type metal layer on the p-type semiconductor layer; (f) forming at least one layer of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer on a surface of the reflective structure; (g) forming an n-type electrode on the upper surface of the n-type metal layer and forming a p-type electrode on the upper surface of the p-type metal layer.

Preferably, in the step (d), an n-type electrode for a structure is formed on the surface of the reflective structure with the same material as the n-type metal layer together with the n-type metal layer. In the step (f) At least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be formed on the surface of the electrode.

Preferably, step (f) may be performed after step (g).

The present invention as described above has an advantage in that the light emitted laterally of the active layer is reflected upward to increase the light extraction efficiency as the reflective structure is formed on the bottom surface of the exposed groove formed to penetrate a part of the n- have.

In addition, the reflective structure can be manufactured by various methods such as separately fabricating the reflective structure, adhering it to the exposure groove, or regrowing the bottom of the exposure groove.

Also, at least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be provided on the surface of the reflective structure to further improve light extraction efficiency.

In addition, the metal reflective layer is electrically connected to the n-type metal layer provided on the upper surface of the n-type semiconductor layer, thereby improving luminous efficiency and electrical characteristics.

In addition, it is advantageous that various light emitting patterns can be formed by variously forming the paths of the exposure grooves and forming the reflective structure along the path of the exposure grooves.

In addition, since the reflective structure is formed of the n-type doped semiconductor layer, the electrical characteristics and the light conversion efficiency are improved.

In addition, an electron blocking layer is provided between the p-type semiconductor layer and the active layer, so that the light extraction efficiency can be further increased.

1 is a cross-sectional view of a conventional nitride semiconductor light emitting device.
2 is a cross-sectional view of a nitride semiconductor light emitting device according to an embodiment of the present invention.
3 is a view showing a three-dimensional cross-sectional shape of a nitride semiconductor light emitting device according to an embodiment of the present invention.
4 is a plan view of a nitride semiconductor light emitting device according to an embodiment of the present invention.
5 is a plan view of a nitride semiconductor light emitting device according to another embodiment of the present invention.
6 is a plan view of a nitride semiconductor light emitting device according to another embodiment of the present invention.
7 is a photograph showing a manufacturing process of a nitride semiconductor light emitting device according to an embodiment of the present invention.

The present invention may be embodied in many other forms without departing from its spirit or essential characteristics. Accordingly, the embodiments of the present invention are to be considered in all respects as merely illustrative and not restrictive.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms.

The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, .

On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise.

In the present application, the terms "comprises", "having", "having", and the like are intended to specify the presence of stated features, integers, steps, operations, components, Steps, operations, elements, components, or combinations of elements, numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and a duplicate description thereof will be omitted.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

2, the nitride semiconductor light emitting device according to one embodiment of the present invention includes an n-type semiconductor layer 100, an active layer 200, and a p-type semiconductor layer 400, and a spacer layer 310, a hole injection layer 320, and an electron blocking layer 330 may be further disposed between the active layer 200 and the p-type semiconductor layer 400. The nitride semiconductor light- have.

In the nitride semiconductor light emitting device of the present embodiment, the p-type semiconductor layer 400, the active layer 200, and a part of the n-type semiconductor layer 100 are partially penetrated to expose a part of the n-type semiconductor layer 100 An exposed groove H is formed.

When the spacer layer 310, the hole injection layer 320 and the electron blocking layer 330 are provided in the nitride semiconductor light emitting device, the exposure groove H may be formed in the electron blocking layer 330, The spacer 320, and the spacer 310 are formed to penetrate therethrough.

A reflective structure for reflecting light emitted upward from the side of the active layer 200 toward the exposure groove H is formed on the bottom of the exposed groove H, that is, on the exposed surface of the n- (500).

2 and 3, the reflective structure 500 may be formed in a triangular shape in cross section so as to have a sharp top, for example, And may have various cross-sectional shapes such as a trapezoidal shape and an elliptical shape as long as it can reflect light emitted upward from the side of the active layer 200 toward the exposure groove H. [

Meanwhile, a reflective metal layer 510, a forward reflective layer, and a distributed Bragg reflection layer may be deposited on the surface of the reflective structure 500. In this embodiment, a reflective metal layer 510 is formed as an example .

The layer formed on the surface of the reflective structure 500, such as the reflective metal layer 510, the front reflector layer, the distributed Bragg reflection layer, and the like, is emitted from the side of the active layer 200 toward the exposure groove H And functions to improve the light extraction efficiency by increasing the reflectance of light.

For example, the reflective metal layer 510 may include at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti, no.

On the other hand, the omnidirectional reflector layer may include a low refractive index material and a highly reflective metal layer. Materials with low refractive index can have porous nanostructures. The metal layer having high reflectivity may include at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt.

Meanwhile, the distributed Bragg reflection layer may include a repeated layered structure of two material layers having different refractive indexes, and the thickness of each layer may be about a quarter of the wavelength of the light emitted from the semiconductor light emitting device.

The reflective structure 500 may be formed separately from the semiconductor device and may be adhesively fixed to the exposed surface of the n-type semiconductor layer 100 which is the bottom surface of the exposure groove H through an adhesive layer (not shown) Type semiconductor layer 100 is grown on the exposed surface of the n-type semiconductor layer 100, which is the bottom surface of the exposed groove H, by a selective region growing method.

Specifically, the reflective structure may be grown by a selective area growth method in which a dielectric layer is formed on the bottom surface of the exposed groove, a part of the dielectric layer is opened, and then a semiconductor layer is grown. The dielectric layer may be made of at least one of SiO ₂ , SiO x, SiN, SiN x, Al ₂ O ₃ , and GaO.

The opening shape of the dielectric layer may be formed in a shape of at least one of a strip shape, a circular shape, an elliptical shape, a polygonal shape, and a ring shape individually or in a row, and various shapes other than the above- Do not exclude.

On the other hand, when the reflective structure 500 is bonded and fixed via the adhesive layer, it can be bonded and fixed by various known bonding methods such as adhesion using a metal or adhesion using a resin.

3, the exposure grooves H may have a plurality of exposed grooves H, and the plurality of exposure grooves H may be formed in a striped shape extending from a predetermined length and spaced apart from each other, (500) may be provided along the longitudinal direction of each exposure groove (H).

At this time, the reflective structure 500 may be provided in a linear or island shape along the longitudinal direction of each of the exposure grooves H. Specifically, the reflective structure 500 may have a line shape corresponding to the longitudinal direction of the exposure groove H (For example, a pyramid whose lower surface is rectangular and whose upper part is truncated, lower surface is hexagonal, and upper part is upper surface) A truncated pyramid, and a trapezoid with a narrower width toward the top).

4 and 5, the exposure groove H includes at least one main exposure groove H1 and a plurality of sub exposure grooves H2 extending from the main exposure groove H1 The sub-exposure grooves H2 and the sub-exposure grooves H2 are formed to extend in a predetermined length and are spaced apart from each other. The reflective structure 500 includes the main exposure groove H1 and the sub exposure groove H2, 4 and 5 illustrate the case where the reflective structure 500 is provided only in the sub-exposure groove H2.

3 to 5, the exposed grooves H may be formed in a curved shape. For example, the exposed grooves may be bent in a serpentine shape, And may be formed in various curved shapes such as a curved shape.

Although not shown in the drawings, the exposure grooves H may be formed in a plurality of annular shapes and spaced apart from each other. The reflective structure 500 may be provided at a central portion of each of the exposure grooves H .

6, the exposed grooves H include line-shaped exposed grooves H3 formed in mutually spaced stripes, and annular-shaped exposed grooves H4 formed in an annular shape, The reflective structure 500 may be provided along the longitudinal direction of the line-shaped exposure groove H3 and at the center of the annular exposure groove H4.

As described above, the exposure grooves H may be formed to have various arrangements and shapes on the plane of the semiconductor light emitting device, and the reflective structures 500 may be provided corresponding to various arrangements and shapes of the exposure grooves H. . As the reflective structure 500 is formed in various shapes according to various arrangements and shapes of the exposure grooves H, various light emission patterns can be realized.

For example, the exposure grooves are formed in a line shape, and the reflective structure has a hexagonal pyramid having a square at a lower surface, a hexagonal lower surface, a pyramid having a lower surface and a truncated upper portion, A truncated pyramid, and a trapezoid with a narrow width toward the top, and may be arranged along the line-shaped exposure groove.

5, the reflective structure 500 may include an n-type doped semiconductor layer. On the surface of the reflective structure 500 formed of the n-type doped semiconductor layer, an n-type Electrodes 520 are stacked and a layer of at least one of a reflective metal layer 510, an omnidirectional reflector layer, and a distributed Bragg reflection layer is deposited on the surface of the n-type electrode 520 for the structure.

The reflective metal layer 510 deposited on the surface of the n-type electrode 520 for the structure includes at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, But is not limited thereto.

Meanwhile, the n-type electrode 520 for the structure may be a metal layer of the same material as the n-type metal layer 110, and the deposition process can be performed at the same time.

As described above, when the reflective structure 500 is formed of an n-type doped semiconductor layer and the n-type electrode 520 for the structure is formed on the surface of the reflective structure 500, the electrical characteristics are improved , The light conversion efficiency is improved and the light extraction efficiency can be increased.

Specifically, the reflective structure 500 formed of the n-type doped semiconductor layer having a relatively low Al composition is formed on the n-type semiconductor layer 100 having a high Al composition, So that the light extraction efficiency can be improved.

5, in the structure in which the reflective structure 500, the n-type electrode 520 for the structure, and the reflective metal layer 510 are sequentially formed as described above, the n-type electrode 520 for the structure Type semiconductor layer 100 may be electrically connected to the n-type metal layer 110 provided on the top surface of the n-type semiconductor layer 100. As a result, the area of the electrode is increased to increase the luminous efficiency.

In the above description, the reflective structure is provided at a position corresponding to the bottom surface of the exposure groove H, but the reflective structure may also be provided on the mesa-etched portion for forming the n- Of course.

That is, in the nitride semiconductor light emitting device of the type shown in FIG. 2, the reflective structure may be provided on the exposed surface of the n-type semiconductor layer exposed for forming the n-electrode 120, There is an advantage that the nitride semiconductor light emitting device can be applied without changing the shape of the conventional nitride semiconductor light emitting device.

Hereinafter, a method of manufacturing the nitride semiconductor light emitting device constructed as described above will be described.

First, a step of sequentially laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate is performed.

Next, a step of etching the p-type semiconductor layer, the active layer and a part of the n-type semiconductor layer to form an exposure groove is performed to expose a part of the n-type semiconductor layer (FIG. 7A)

Next, a step of forming a vertically downward reflective structure on the bottom surface of the exposure groove to reflect the light emitted from the exposure groove at the side of the active layer upward (FIG. 7 (b))

In the above step, the reflective structure may be formed by adhering or fixing to the bottom surface of the exposure groove through an adhesive layer or by growing the selective exposure area on the bottom surface of the exposure groove.

Next, a step of forming an n-type metal layer on a part of the upper surface of the exposed n-type semiconductor layer is performed (Fig. 7 (c)).

Meanwhile, in the above step, an n-type electrode for a structure may be formed together with the n-type metal layer on the surface of the reflective structure with the same material as the n-type metal layer.

Next, a step of forming a p-type metal layer on the upper surface of the p-type semiconductor layer is performed (Fig. 7 (d)).

Next, a step of forming at least one layer of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer is performed on the surface of the reflective structure (Fig. 7 (e)).

On the other hand, when an n-type electrode for a structure is formed on the surface of the reflective structure with the same material as the n-type metal layer together with the n-type metal layer, the metal reflective layer, A directional reflector layer, and a distributed Bragg reflection layer may be formed.

Next, an n-type electrode is formed on the top surface of the n-type metal layer and a p-type electrode is formed on the top surface of the p-type metal layer (FIG. 7 (f)).

As described above, an example of the method of manufacturing the nitride semiconductor light emitting device has been described. However, it goes without saying that the process after the step of forming the reflective structure may be appropriately changed as needed.

For example, the process of forming the reflective metal layer on the upper surface of the reflective structure formed through regrowth may proceed after the formation of the n-type and p-type electrodes.

For example, when the reflective structure is adhered and fixed using an adhesive layer, the reflective structure may be adhesively fixed to the semiconductor light emitting device regardless of the process after some n-type semiconductor is exposed by etching.

For example, when a reflective structure is adhered and fixed using an adhesive layer, a layer such as a reflective metal layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be formed before the reflective structure is adhered and fixed to the semiconductor light- A reflective structure including a layer such as a metal layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer may be adhesively fixed to the semiconductor light emitting device regardless of the process after some n-type semiconductor is exposed by etching.

Although the present invention has been described with reference to the preferred embodiments thereof with reference to the accompanying drawings, it will be apparent to those skilled in the art that many other obvious modifications can be made therein without departing from the scope of the invention. Accordingly, the scope of the present invention should be interpreted by the appended claims to cover many such variations.

10: substrate
100: n-type semiconductor layer
110: n-type metal layer
120: n-type electrode
200: active layer
310: electron blocking layer
320: Hole injection layer
330: Spacer
400: a p-type semiconductor layer
410: p-type metal layer
420: P-type electrode
500: reflective structure
510: reflective metal layer
520: n-type electrode for structure
H: Exposed groove

Claims (28)

1. A nitride semiconductor light emitting device comprising an n-type semiconductor layer, an active layer, and a p-type semiconductor layer which are sequentially stacked on a substrate,
An exposed groove formed by etching a part of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer such that a part of the n-type semiconductor layer is exposed; And
And a reflective structure provided on a bottom surface of the exposed groove and adapted to reflect upward the light emitted from the exposed groove on the side of the active layer,
Wherein the reflective structure is adhered to the bottom surface of the exposed groove through an adhesive layer or grown on a bottom surface of the exposed groove by a selective area growth method. delete The method according to claim 1,
Wherein at least one layer of a metal reflective layer, a front reflector layer, and a distributed Bragg reflection layer is provided on a surface of the reflective structure. The method of claim 3,
Wherein the metal reflective layer comprises at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt. delete The method according to claim 1,
The reflective structure may include:
Forming a dielectric layer on a bottom surface of the exposed groove, and opening a part of the dielectric layer to grow the semiconductor layer. The method according to claim 6,
Wherein the dielectric layer formed on the bottom surface of the exposed groove is made of at least one of SiO ₂ , SiO x, SiN, SiN x, Al ₂ O ₃ , and GaO. The method according to claim 6,
The opening shape of the dielectric layer
Wherein at least one of a strip shape, a circular shape, an elliptical shape, a polygonal shape, and a ring shape is formed individually or in rows. The method according to claim 1,
Wherein at least one layer of a metal reflective layer, a front reflector layer, and a distributed Bragg reflection layer is provided on a surface of the reflective structure. 10. The method of claim 9,
Wherein the metal reflective layer comprises at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt. 11. The method according to claim 4 or 10,
Wherein the metal reflective layer is electrically connected to an n-type metal layer provided on an upper surface of the n-type semiconductor layer. The method according to claim 1,
The plurality of exposure grooves may be formed in a strip shape extending from a predetermined length and spaced apart from each other. The reflective structure may have a linear or island shape along the longitudinal direction of the exposure grooves Wherein the nitride semiconductor light emitting device is a nitride semiconductor light emitting device. The method according to claim 1,
The exposure groove may include at least one main exposure groove and a plurality of subexposure grooves extending from the main exposure groove, wherein the plurality of subexposure grooves are formed to have a predetermined length and are spaced apart from each other Wherein the reflective structure is provided along a longitudinal direction of at least one of the main exposure groove and the sub exposure groove. The method according to claim 1,
Wherein the plurality of exposure grooves are formed in an annular shape and are spaced apart from each other, and the reflective structure is provided at a central portion of each of the exposure grooves. The method according to claim 1,
Wherein the reflective grooves are formed along the longitudinal direction of the line-shaped exposed grooves, and wherein the reflective grooves are formed along the longitudinal direction of the line-shaped exposed grooves, Wherein the light emitting element is provided at a central portion of the annular exposure groove. The method according to claim 1,
Wherein the plurality of exposure grooves are formed in a strip shape extending from a predetermined length and spaced apart from each other, and the reflective structure is provided along a longitudinal direction of each of the exposure grooves. device. The method according to claim 1,
Wherein the reflective structure is an n-type doped semiconductor layer. 18. The method of claim 17,
Wherein at least one of a metal reflective layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer is deposited on the surface of the n-type electrode for the structure, the n-type electrode for the structure being laminated on the surface of the reflective structure, Semiconductor light emitting device. 19. The method of claim 18,
Wherein the metal reflective layer comprises at least one of Au, Ag, Al, Ni, Cu, Rh, Pd, Zn, Ru, La, Ti and Pt. 19. The method of claim 18,
And the n-type electrode for the structure is electrically connected to the n-type metal layer provided on the top surface of the n-type semiconductor layer. The method according to claim 1,
And an electron blocking layer is provided between the p-type semiconductor layer and the active layer. (a) sequentially laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate;
(b) etching the part of the p-type semiconductor layer, the active layer and the n-type semiconductor layer to expose a part of the n-type semiconductor layer to form an exposure groove; And
(c) forming a reflection structure on the bottom surface of the exposure groove so as to reflect upward the light emitted from the exposure groove at the side of the active layer,
In the step (c)
Wherein the reflective structure is formed by adhering or fixing to the bottom surface of the exposure groove through an adhesive layer or by growing a selective area on the bottom surface of the exposure groove. delete 23. The method of claim 22,
Wherein at least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer is formed on the surface of the reflective structure before adhering and fixing the reflective structure to the bottom of the exposed groove. ≪ / RTI > 25. The method of claim 22 or 24,
Prior to step (c)
(pc1) forming an n-type metal layer on a part of the upper surface of the exposed n-type semiconductor layer;
(pc2) forming a p-type metal layer on an upper surface of the p-type semiconductor layer;
(pc3) forming an n-type electrode on an upper surface of the n-type metal layer, and forming a p-type electrode on an upper surface of the p-type metal layer,
Wherein the reflective structure is adhered and fixed to the bottom surface of the exposure groove via an adhesive layer after any one of the steps (pc1), (pc2), and (pc3). . 23. The method of claim 22,
After the step (c)
(d) forming an n-type metal layer on a part of the upper surface of the exposed n-type semiconductor layer;
(e) forming a p-type metal layer on the p-type semiconductor layer;
(f) forming at least one layer of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer on a surface of the reflective structure;
(g) forming an n-type electrode on the n-type metal layer and forming a p-type electrode on the p-type metal layer. 27. The method of claim 26,
In the step (d), an n-type electrode for a structure is formed on the surface of the reflective structure with the same n-type metal layer as the n-type metal layer,
Wherein at least one of a metal reflection layer, an omnidirectional reflector layer, and a distributed Bragg reflection layer is formed on the surface of the n-type electrode for the structure in the step (f). 27. The method of claim 26,
Wherein the step (f) is performed after the step (g).

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