KR101474775B1 - Bobbin of Electromagnet for Producing Magnetic Field for Growing Silicon Single Crystal and Electromagnet Having the Same - Google Patents
Bobbin of Electromagnet for Producing Magnetic Field for Growing Silicon Single Crystal and Electromagnet Having the Same Download PDFInfo
- Publication number
- KR101474775B1 KR101474775B1 KR1020140049064A KR20140049064A KR101474775B1 KR 101474775 B1 KR101474775 B1 KR 101474775B1 KR 1020140049064 A KR1020140049064 A KR 1020140049064A KR 20140049064 A KR20140049064 A KR 20140049064A KR 101474775 B1 KR101474775 B1 KR 101474775B1
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- Prior art keywords
- bobbin
- ring
- winding
- bobbin body
- conductive wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
- H01F27/324—Insulation between coil and core, between different winding sections, around the coil; Other insulation structures
- H01F27/325—Coil bobbins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
- H01F7/08—Electromagnets; Actuators including electromagnets with armatures
- H01F7/081—Magnetic constructions
- H01F2007/083—External yoke surrounding the coil bobbin, e.g. made of bent magnetic sheet
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Field of the Invention [0001] The present invention relates to a magnetic field generating electromagnet bobbin for growing a silicon single crystal which can efficiently disperse a magnetic force and efficiently generate a magnetic field and can easily and uniformly wind a conductive wire, will be. The magnetic field generating electromagnet bobbin for growing silicon single crystal according to the present invention has a ring-like band shape in which both ends of a rectangular band are connected and a ring-shaped band is bent so that one side of the ring- The bobbin body is formed in a deformed shape so that the length of the conductive wire wound on the outer periphery of the bobbin body is equal to the length of the rectangular bobbin body so as to maintain the same distance to one side of the bobbin body contacting the reference curved surface. And a winding surface formed so that the conductive wire is adhered and wound around the outer periphery. The outer circumferential length of the bobbin according to the present invention is equal to the shortest winding length of the conductive wire wound around the entire winding surface. Therefore, the work of winding the conductive wire is very easy and the winding time can be greatly shortened.
Description
The present invention relates to a bobbin, and more particularly, to a bobbin for a magnetic field generating electromagnet for growing a silicon single crystal and an electromagnet having the bobbin.
Electromagnets in which conductive wires are wound on the bobbin are applied to various technical fields requiring a magnetic field. Among the technical fields requiring a magnetic field, a representative example is the single crystal growth field. As a single crystal growth technique, a CZ (Czochralski) method for growing a single crystal ingot from a melt of a single crystal material such as silicon contained in a crucible is widely used.
In the CZ method, natural convection occurs in the single crystal material melt because the single crystal material melt is heated using a heater provided on the side of the crucible. In addition, since the rotation speed of a single crystal or a crucible is adjusted to obtain a defect-free high-quality silicon single crystal due to vacancy or self-interstitial, a single-crystal material melt contains a forced convection . It is known that natural convection and forced convection of a melt of a single crystal material can be controlled by using a magnetic field.
A method of growing a single crystal while applying a horizontal magnetic field to a melt of a single crystal material is known as a MCZ (Magnetic CZ) method. The MCZ method can produce a high quality single crystal of large diameter by applying a magnetic field to a molten single crystal material contained in a crucible to suppress the generation of a large amount of heat in the melt.
1 shows an example of a single crystal growing apparatus by the conventional MCZ method.
The single crystal growth apparatus shown in Fig. 1 has a structure in which a
In manufacturing the single crystal, the
That is, the molten
However, the conventional magnetic
To solve this problem, a superconducting magnet device having a curved circular or saddle superconducting coil has been disclosed in Registration Utility Model No. 0327810 (Sep. 22, 2003). As shown in Fig. 2 (a), the superconducting coil E disclosed in the above publication is disposed around the cylindrical storage space.
In order to form a curved circular or elliptic superconducting coil E as shown in the figure, the bobbin for supporting the superconducting wire must be a circular or saddle-shaped bobbin, and the superconducting wire must be wound around the outer circumferential surface thereof. When the bobbin has a shape in which the cylinder is cut into a bent shape and the one side thereof is cut out and spread on a flat surface, the outer
Therefore, when the wire rod is wound on the bobbin, the
Disclosure of the Invention The present invention has been devised in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method of effectively dispersing magnetic force, efficiently generating a magnetic field, and easily and uniformly winding a conductive wire, And an electromagnet having the bobbin.
In order to accomplish the above object, the present invention provides a magnetic field generating electromagnet bobbin for growing silicon single crystal, comprising a ring-shaped band shape having both ends of a rectangular band connected to each other, The bobbin body being formed in a shape in which the ring-shaped band is bent and deformed so as to be in contact with the bobbin body; And a plurality of bobbin bodies each having a conductive surface on the outer circumference of the bobbin body so that the length of the conductive wire wound around the outer circumference of the bobbin body to be equal to one side of the bobbin body contacting the reference curved surface is equal to the length of the rectangular band, And a winding surface formed so that the wire rod can be closely wound and wound.
According to an aspect of the present invention, there is provided a magnetic field generating electromagnet for growing a silicon single crystal, comprising: a ring-shaped band shape having both ends of a rectangular band connected to each other; A bobbin body having the ring-shaped band formed in a bent shape; The wire rod is brought into close contact with the outer periphery of the bobbin body so that the length of the wire wound around the outer periphery of the bobbin body is the same as the length of the rectangular band so as to be equally spaced from one side of the bobbin body contacting the reference curved surface A winding surface formed so as to be able to be wound; And a conductive wire wound on a winding surface of the bobbin body so as to maintain the same interval with respect to one side of the bobbin body contacting the reference curved surface along the winding surface of the bobbin body.
The magnetic field generating electromagnet for growing silicon single crystal according to the present invention is characterized in that the conductive wire is wound in the shortest distance on the bobbin while the outer circumferential length of the winding surface on which the conductive wire is wound has a constant perimeter geometry And the conductive wire is wound around the entire winding surface of the bobbin with the same winding length very uniformly wound. Accordingly, it is possible to efficiently generate a magnetic field and effectively disperse a magnetic force, and can be applied to a single crystal growth apparatus to inhibit flow of a molten single crystal material in a cylindrical container to a stable and uniform magnetic field, thereby contributing to manufacturing a high quality single crystal.
In addition, the magnetic field generating electromagnets for growing silicon single crystal according to the present invention have the same (+) curvature as the winding surface of the bobbins on which the conductive wires are wound and have the same overall circumferential length, Can be easily carried out, so that the production is easy.
Also, since the magnetic field generating electromagnets for growing silicon single crystal according to the present invention are formed in a ring shape as a whole, they can be installed without increasing the size of the container for accommodating the low temperature container of the single crystal growing apparatus. Therefore, it is possible to reduce the size of the single crystal growth apparatus and reduce the manufacturing cost of the single crystal growth apparatus.
Further, the bobbin for a magnetic field generating electromagnet for growing silicon single crystal according to the present invention has the outer circumferential length of the winding surface over the entire winding surface equal to the shortest winding length of the conductive wire wound thereon. Therefore, when the conductive wire material is wound on the conductive wire material, the conductive wire material does not move on the winding surface even if a tension is applied to the conductive wire material, and there is no need to fix the wire material with an adhesive or the like after winding the wire material once. Since the conductive wire can be wound around the winding surface in the same manner as the general solenoid winding method, the conductive wire can be easily wound, the winding time can be greatly shortened, and the winding work can be easily automated.
The magnetic field generating electromagnet bobbin for growing the silicon single crystal according to the present invention can reduce the partial stress applied to the conductive wire during the winding of the conductive wire while reducing the slip of the conductive wire between the winding turns of the conductive wire. ) Does not occur. Since the bending force applied to the conductive wire is the same throughout the conductive wire, the stress unbalance in the conductive wire does not occur, thereby preventing deterioration of the characteristics of the conductive wire, The durability of the electromagnet can be reduced.
1 shows an example of a single crystal growing apparatus by the conventional MCZ method.
Fig. 2 (a) shows a superconducting coil of a conventional superconducting magnet apparatus, Fig. 2 (b) shows a bobbin for implementing a superconducting coil shown in Fig. 2 Lt; / RTI >
3 is a plan view showing an example of an apparatus to which a magnetic field generating electromagnet for growing silicon single crystal is applied according to an embodiment of the present invention.
4 is a side cross-sectional view showing a magnetic field generating electromagnet for cutting silicon single crystal growth according to an embodiment of the present invention.
5 is a perspective view showing a state in which a magnetic field generating electromagnet bobbin for growing silicon single crystal according to an embodiment of the present invention is disposed on the outer surface of a cylindrical vessel of the apparatus shown in FIG.
FIG. 6 illustrates a bobbin body of a bobbin for generating a magnetic field for growing silicon single crystal according to an embodiment of the present invention, and a flange coupled to one side of the bobbin body are disposed on an outer surface of a cylindrical vessel of the apparatus shown in FIG.
7 illustrates a method of winding a conductive wire on a bobbin for generating a magnetic field for the growth of silicon single crystal according to an embodiment of the present invention.
8 is a plan view showing a bobbin for a magnetic field generating electromagnet for growing silicon single crystal according to an embodiment of the present invention.
9 is a front view showing a bobbin body provided in a bobbin for a magnetic field generating electromagnet for growing silicon single crystal according to an embodiment of the present invention.
10 is a view for explaining that the outer circumferential length of the bobbin body provided in the magnetic field generating electromagnet bobbin for growing silicon single crystal according to the embodiment of the present invention is the same throughout the entire winding surface.
11 (a) is a plan view showing a bobbin body of a bobbin for a magnetic field generating electromagnet for growing silicon single crystal according to an embodiment of the present invention, and FIG. 11 (b) The bobbin body is unfolded on a flat surface.
12 shows a state in which a magnetic field generating electromagnet bobbin for growing a silicon single crystal according to another embodiment of the present invention is disposed on the outer surface of a cylindrical vessel of the apparatus shown in FIG.
Hereinafter, a magnetic field generating electromagnet bobbin for growing silicon single crystal according to the present invention and an electromagnet having the electromagnet will be described in detail with reference to the accompanying drawings.
FIG. 3 is a plan view showing an example of an apparatus to which a magnetic field generating electromagnet for growing a silicon single crystal according to an embodiment of the present invention is applied. FIG. 4 is a cross-sectional view illustrating a magnetic field generating electromagnet for growing a silicon single crystal according to an embodiment of the present invention. FIG. 5 is a perspective view illustrating a state in which a magnetic field generating electromagnet bobbin for growing a silicon single crystal according to an embodiment of the present invention is disposed on the outer surface of a cylindrical vessel of the apparatus shown in FIG. 3. FIG.
3 to 5, a magnetic
3 and 4, the
An insulating
As shown in FIGS. 3 to 6, the
The
6 to 9, the
That is, the ring-shaped
9, when the front view of the
The width of the winding
When the
More specifically, as shown in Fig. 10, the outer peripheral length of the ring-shaped inner
11 (a), the
As described above, the
After the
As described above, the
The
The magnetic field generating
In addition, since the
12 shows a state in which a magnetic field generating electromagnet bobbin for growing a silicon single crystal according to another embodiment of the present invention is disposed on the outer surface of a cylindrical vessel of the apparatus shown in FIG.
A magnetic field generating electromagnet for growing silicon single crystal according to another embodiment of the present invention includes a
12, the
The plurality of ring-shaped winding
The
The
Although the preferred embodiments of the present invention have been described above, the scope of the present invention is not limited to the embodiments described above.
For example, the electromagnet according to the present invention may be used as a superconducting magnet applied to a single crystal growth apparatus as shown to form a horizontal magnetic field in the
Although the
In the figure, when the front view of the
The
12 shows that the
50: low temperature vessel 60: cylindrical vessel
70: imaginary cylinder 100: magnetic field generation electromagnet
110:
121, 141: bobbin body 122: winding surface
123: ring-shaped inner end 124: ring-shaped outer end
125, 126: flange portion 130: insulating plate material
142, 143, 144: Ring-
Claims (9)
A bobbin body in which the ring-shaped band is formed in a bent shape so that one side of the ring-shaped band uniformly contacts an imaginary reference curved surface; And
The conductive wire is wound around the bobbin body so that the length of the conductive wire wound around the outer periphery of the bobbin body is equal to the length of the rectangular band so as to maintain the same distance from one side of the bobbin body contacting the reference curved surface, And a winding surface formed so as to be in close contact with and wound on the bobbin.
Wherein the imaginary reference curved surface is located on a virtual cylindrical outer circumferential surface having a constant radius of curvature (r).
Wherein the bobbin body has a plurality of ring-shaped winding portions, each of which is formed in a curved ring-shaped band shape having both ends of a rectangular band connected to each other so as to mutually abut one side edge.
The wire rod is brought into close contact with the outer periphery of the bobbin body so that the length of the wire wound around the outer periphery of the bobbin body is the same as the length of the rectangular band so as to be equally spaced from one side of the bobbin body contacting the reference curved surface A winding surface formed so as to be able to be wound; And
And a conductive wire wound on a winding surface of the bobbin body so as to maintain the same distance from one side of the bobbin body contacting the reference curved surface along a winding surface of the bobbin body. Magnetic field generating electromagnet.
Wherein the imaginary reference curved surface is located on a virtual cylindrical outer circumferential surface having a constant radius of curvature (r).
And a rectangular strip-shaped insulation plate interposed between a plurality of layers on the winding surface in which the conductive wires are wound in multiple stages and stacked in turn on the winding surface. Electromagnetism.
Wherein the insulating plate material is made of a rectangular prepreg.
Wherein the conductive wire is made of a superconductor.
Wherein the bobbin body has a plurality of ring-shaped winding portions formed in a curved ring-like band shape in which both ends of a rectangular band are connected to each other so that one side of each of the ring-shaped winding portions mutually abuts.
Priority Applications (1)
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KR1020140049064A KR101474775B1 (en) | 2014-04-24 | 2014-04-24 | Bobbin of Electromagnet for Producing Magnetic Field for Growing Silicon Single Crystal and Electromagnet Having the Same |
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KR1020140049064A KR101474775B1 (en) | 2014-04-24 | 2014-04-24 | Bobbin of Electromagnet for Producing Magnetic Field for Growing Silicon Single Crystal and Electromagnet Having the Same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102273671B1 (en) | 2020-06-19 | 2021-07-07 | 제이에이취엔지니어링주식회사 | Manufacturing method of the Bobbin of Electromagnet for Producing Magnetic Field for Growing Semiconductor Single Crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163241A (en) * | 1992-11-17 | 1994-06-10 | Mitsubishi Heavy Ind Ltd | Electromagnet for magnetic field generating device |
JPH06176924A (en) * | 1992-12-09 | 1994-06-24 | Sumitomo Electric Ind Ltd | Superconducting magnet |
-
2014
- 2014-04-24 KR KR1020140049064A patent/KR101474775B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163241A (en) * | 1992-11-17 | 1994-06-10 | Mitsubishi Heavy Ind Ltd | Electromagnet for magnetic field generating device |
JPH06176924A (en) * | 1992-12-09 | 1994-06-24 | Sumitomo Electric Ind Ltd | Superconducting magnet |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102273671B1 (en) | 2020-06-19 | 2021-07-07 | 제이에이취엔지니어링주식회사 | Manufacturing method of the Bobbin of Electromagnet for Producing Magnetic Field for Growing Semiconductor Single Crystal |
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