KR20170088120A - Single crystal ingot growth apparatus and the growing method of it - Google Patents

Single crystal ingot growth apparatus and the growing method of it Download PDF

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Publication number
KR20170088120A
KR20170088120A KR1020160008043A KR20160008043A KR20170088120A KR 20170088120 A KR20170088120 A KR 20170088120A KR 1020160008043 A KR1020160008043 A KR 1020160008043A KR 20160008043 A KR20160008043 A KR 20160008043A KR 20170088120 A KR20170088120 A KR 20170088120A
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South Korea
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magnetic field
melt
crucible
single crystal
crystal ingot
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KR1020160008043A
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Korean (ko)
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홍영호
박현우
손수진
김남석
이재형
최석인
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주식회사 엘지실트론
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Priority to KR1020160008043A priority Critical patent/KR20170088120A/en
Publication of KR20170088120A publication Critical patent/KR20170088120A/en

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to a single crystalline ingot growing device and a growing method thereof capable of constantly maintaining a melt flow pattern, and forming diffusion boundary layer thickness (DBLt) to be close to a melt interface. The present invention is provided to rotate a crucible and a seed cable in the same direction to each other while growing a single crystalline ingot for properly controlling a temperature slope of melt, and to limit the maximum magnetic field position and magnetic field strength, thereby constantly maintaining the melt flow pattern and forming the DBLt to be equal to or thicker than 10 mm from the melt interface. When the melt flow pattern is constantly maintained, the present invention improves oxygen dispersion in the longitudinal direction of the ingot. When the DBLt is formed to be equal to or thicker than 10 mm from the melt interface, the present invention improves the oxygen dispersion in the radial direction of the ingot.

Description

[0001] The present invention relates to a single crystal ingot growing apparatus and a growing method thereof,

The present invention relates to a monocrystalline ingot growing apparatus capable of maintaining a melt flow pattern constant and a diffusion boundary layer thickness (DBLt) close to a melt interface, and a growth method thereof.

In general, a single crystal ingot is manufactured by a Czochralski (CZ) method.

In the CZ method, polycrystalline silicon is charged into a quartz crucible, heated by a heater, which is a graphite heating body, and melted. Then, seed crystals are immersed in the silicon melt, and when crystallization occurs at the interface, the seed crystal is pulled while rotating, Of the ingot.

However, when silicon single crystals contain oxygen as crystal defects and undesirable impurities, particularly oxygen, in the growth process of the silicon single crystal, when a single crystal ingot containing oxygen is produced as a semiconductor device, It grows into precipitates (oxygen precipitates). Of course, such an oxygen precipitate not only enhances the strength of the silicon wafer but also serves as an internal gettering site for capturing metal pollution elements. However, It may also show some harmful properties.

Therefore, it is required that the oxygen concentration of the wafer produced from the silicon single crystal ingot is uniformly formed in the longitudinal direction and the radial direction. For this purpose, when the silicon single crystal ingot is grown, the seed rotation speed, the crucible rotation speed A melt gap which is the distance between the melt surface and the heat shield, a pull speed of the ingot, a design change of the hot zone, a change of the third zone such as nitrogen or carbon, The concentration of oxygen can be controlled through the element doping of the element.

However, in the case of a wafer obtained from a silicon single crystal ingot currently produced, a region in which the oxygen concentration is ununiformly annular at the edge is found, and this can be attributed to the above-described irregularity of the internal gettering property.

1A and 1B are graphs showing the melt flow of a single crystal ingot growing apparatus according to the prior art.

The single crystal ingot growing apparatus according to the prior art activates the flow of the melt to rotate the crucible and the seed cable in opposite directions during single crystal ingot growth in order to uniformly form the entire temperature distribution of the melt.

However, according to the prior art, there is a saddle point in the flow pattern of the melt interface as shown in Figs. 1A and 1B, while the flow of the melt is relatively stably maintained at -10 mm from the melt interface, (Diffusion Boundary Layer Thickness: DBLt) is formed thinly within 10 mm from the melt interface.

According to the above conventional technology, oxygen concentration is uneven in the longitudinal direction of the single crystal ingot because the oxygen concentration is uneven at the melt interface due to the saddle point appearing at the melt interface even when oxygen is convected in the melt, and further, The diffusion boundary layer thickness DBLt is formed to be thin, so that oxygen is hardly diffused into the crystal through the melt interface, so that the oxygen concentration is uneven in the radial direction of the single crystal ingot.

Therefore, in order to uniformly form the oxygen concentration in the wafer in the longitudinal direction and the radial direction, it is required to maintain the melt flow pattern and to form the diffusion boundary layer thickness DBLt to be thick.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art described above, and provides a single crystal ingot growing apparatus and a growing method thereof capable of forming a diffusion boundary layer thickness (DBLt) thickly while maintaining a constant melt flow pattern. There is a purpose.

The present invention relates to a crucible for receiving a melt; A seed cable for pulling up the single crystal ingot from the melt of the crucible; A heater for heating the crucible; And a magnetic field applying unit applying a magnetic field to the melt of the crucible, wherein the crucible and the seed cable are rotated in the same direction when the single crystal ingot is grown.

More preferably, the maximum magnetic field position (MGP) of the magnetic field applying unit is limited to a range of 200 to -300 mm, and the magnetic field intensity (MI) of the magnetic field applying unit is limited to a range of 1500 to 4000 G.

The present invention also provides a method for manufacturing a crucible, comprising: a first step of heating a crucible containing a melt; A second step of applying a magnetic field to the melt of the crucible; And a third step of pulling up the single crystal ingot by the seed cable from the melt of the crucible, wherein during the growing of the single crystal ingot in the third step, the crucible and the seed cable are rotated in the same direction with each other to provide.

More preferably, during the growth of the monocrystalline ingot in the third step, the maximum magnetic field position (MGP) is limited to the range of 200 to -300 mm, and the magnetic field strength (MI) is limited to the range of 1500 to 4000 G.

The single crystal ingot growing apparatus and the method for growing the same according to the present invention are characterized in that in order to appropriately control the temperature gradient of the melt, the crucible and the seed cable are rotated in the same direction during the growth of the single crystal ingot, The flow pattern can be kept constant and the diffusion boundary layer thickness DBLt can be formed thicker than 10 mm from the melt interface.

Therefore, if the melt flow pattern is kept constant, the oxygen scattering can be improved in the longitudinal direction of the ingot, and if the diffusion boundary layer thickness DBLt is formed thicker than 10 mm from the melt interface, oxygen scattering can be improved in the radial direction of the ingot There is an advantage to be able to do.

Figs. 1A and 1B are graphs showing the melt flow of a single crystal ingot growing apparatus according to the prior art. Fig.
2 is a view showing a single crystal ingot growing apparatus of the present invention.
3 is a flowchart showing a single crystal ingot growing method of the present invention.
4A and 4B are graphs showing the melt flow of the single crystal ingot growing apparatus of the present invention.
5 is a graph showing the melt flow according to the maximum magnetic field position (MGP) of the present invention.
6 is a graph showing the melt flow according to the magnetic field strength (MI) of the present invention.

Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.

2 is a diagram showing a single crystal ingot growing apparatus of the present invention.

The single crystal ingot growing apparatus of the present invention includes a chamber 110, a crucible 120 and a crucible driving unit 125, a seed cable W and a pulling drive unit D, a heater 130, A heat insulating member 140, a heat shield member 150, and a magnetic field applying unit 160. [

The chamber 110 is a closed space for forming a hot zone for growing an ingot from the melt. The crucible 120, the heater 130, and the heat insulating material 140 are embedded.

The crucible 120 is a container containing a melt, and melts the polycrystalline silicon to form a melt. In the embodiment, the crucible 120 is composed of an inner peripheral portion made of quartz and an outer peripheral portion made of graphite.

The crucible driving unit 125 is provided below the crucible 120 and may include a drive shaft and a pedestal so that the crucible 120 can be rotated and lifted during a single crystal ingot growing process .

In the embodiment, the crucible driving unit 125 raises the crucible 120 to keep the melt gap G constant as the melt is reduced as the single crystal ingot growing process proceeds.

The crucible driving unit 125 rotates the crucible 120 to form a melt flow in the crucible 120 and rotates in the same direction as the seed cable W described below.

The seed cable W is configured such that a seed which is a seed crystal hangs at the lower end. When the seed cable W is slowly rotated and rotated while the seed suspended on the seed cable W is immersed in the melt, , A single crystal is grown in the radial direction and the longitudinal direction of the seed.

Of course, the seed cable W is formed in such a manner that a plurality of strands of wire are constantly twisted so that the ingot with a heavy load can be pulled up.

The pull-up driving part D may elevate the seed cable W above the crucible 120, and the seed cable W may be wound around a drum that is rotationally driven by a motor.

In addition, the pull-up driving unit D rotates the seed cable W in the same direction as the crucible 120 in order to form a flow of melt contained in the crucible 120.

Therefore, if the seed cable W rotates in the same direction as the crucible 120, the flow of the melt can not be actively formed, but the turbulent flow is suppressed to uniformly form the melt flow pattern, DLBt can be formed thick from the melt interface and the effect of the magnetic field strength MGP and the magnetic field intensity MI to be described below can be controlled to enhance the effect.

The heater 130 is a heat source for heating the crucible 120 and is provided around the crucible 120.

The heater 120 includes a side heater 131 for heating the side surface of the crucible 120 and a bottom heater 132 for heating the lower surface of the crucible 120.

In recent years, requirements for crystal quality have been increasing. In order to satisfy this requirement, it is preferable that both the side heater 131 and the bottom heater 132 are operated during the single crystal ingot growing process to heat the melt to a high temperature.

The heat insulating material 140 is provided on the inner circumferential surface of the chamber 110 so as to surround the heater 130 to prevent the heat of the heater 130 from escaping through the side surface of the chamber 110.

The upper part of the heat shielding member 150 is fixed to the upper side of the heat insulating member 140 and the lower end of the heat sinking member 150 is bonded to the melted interface And the melt gap (G).

Accordingly, the single crystal ingot grown from the melt is cooled while passing through the heat shield member 150. [

The magnetic field applying unit 160 is disposed outside the chamber 110 and is configured to apply a magnetic field to the melt contained in the crucible 120. The magnetic field applying unit 160 applies a magnetic field to the melt flow field and the diffusion boundary layer thickness DBLt, Position (Maximum Gauss Plane: MGP) and magnetic field intensity (MI).

In the embodiment, the magnetic field applying unit 160 is configured to apply a strong magnetic field to the melt while the single crystal ingot is being grown. The maximum magnetic field position MGP is controlled in the range of 200 to -300 mm, (MI) can be controlled in the range of 1500 to 4000G.

At this time, the magnetic field intensity (MI) is a position measured at the center of the maximum magnetic field position. If the magnetic field intensity (MI) is 1500 G or less, it is difficult to keep the melt flow pattern constant by generating turbulent flow of the melt, ) Is more than 4000G, it is difficult to form larger current superconductivity.

Further, during the growth of the single crystal ingot, the ratio A set according to the following formula (1) can be controlled in the range of 0.86 to 1.2.

Figure pat00001

At this time, the maximum magnetic field position MGP may be set and the magnetic field strength MI may be applied at the corresponding position.

Therefore, by limiting to the ratio according to the maximum magnetic field position MGP and the magnetic field intensity MI, even if the maximum magnetic field position MGP fluctuates, the range of the magnetic field strength MI is limited. Therefore, The magnetic field intensity applied to the diffusion boundary layer can be maintained constant, and the effect similar to the conditions for maintaining the melt flow pattern and the diffusion boundary layer thickness DBLt can be exhibited.

Of course, the maximum magnetic field position (MGP) and the magnetic field strength (MI) may vary depending on the number and shape of the coils constituting the magnetic field applying unit 160 and the dimension and the magnetic field strength. The same effect can be obtained when the numerical value is applied.

3 is a flowchart showing a single crystal ingot growing method of the present invention.

The single crystal ingot growing method of the present invention heats the melt on the side surface and the bottom surface of the crucible as shown in Fig. 3 (see S1)

Of course, if the polycrystalline silicon is contained in the crucible, the sides and bottom surfaces of the crucible are heated to produce melt.

Compared with conventional heating of the crucible side only, as the melt is heated to a higher temperature, the convection of oxygen inside the melt becomes active.

Next, a magnetic field is applied to the melt within a range in which the maximum magnetic field position (MGP) and the magnetic field intensity (MI) are defined (see S2).

In the embodiment, the maximum magnetic field position (MGP) is controlled in the range of 200 to -300 mm, the magnetic field intensity (MI) is controlled in the range of 1500 to 4000 G, or the ratio A set according to the above- Lt; / RTI >

Therefore, when a strong magnetic field is formed at the melt interface, the diffusion boundary layer thickness DBLt can be formed thick from the melt interface.

Next, rotate the crucible and the seed cable in the same direction (see S3).

Therefore, if the crucible and the seed cable are rotated in the same direction, the turbulent flow of the melt can be suppressed, and the melt flow pattern can be uniformly formed at the melt interface.

As described above, the single crystal ingot is grown from the melt under the condition that the melt flow pattern is uniform in the melt interface and the diffusion boundary layer thickness DBLt is thick (see S4).

Therefore, the oxygen concentration can be uniformly formed in the longitudinal direction and the radial direction of the single crystal ingot to improve the oxygen scattering, thereby improving the quality of the single crystal ingot and the wafer produced thereby.

4A and 4B are graphs showing the melt flow of the single crystal ingot growing apparatus of the present invention.

The single crystal ingot growing apparatus of the present invention rotates the crucible and the seed cable in the same direction during the growth of the single crystal ingot.

As shown in FIGS. 4A and 4B, there is no saddle point in the flow pattern at the melt interface, while unstable spirals appear in the flow of the melt at -10 mm from the melt interface, thereby maintaining the limited cycle shape (Diffusion Boundary Layer Thickness: DBLt) is formed thicker than 10 mm from the melt interface.

Therefore, since the oxygen concentration is uniform in the melt interface due to the uniform melt flow pattern formed on the melt interface, the oxygen concentration can be uniformly formed in the longitudinal direction of the single crystal ingot, and furthermore, the diffusion boundary layer thickness DBLt is formed thick Oxygen is easily diffused into the crystal through the melt interface, so that the oxygen concentration can be formed nonuniformly in the radial direction of the single crystal ingot.

FIG. 5 is a graph showing the melt flow according to the maximum magnetic field position (MGP) of the present invention. When the maximum magnetic field position MGP is 200 mm or more or -300 mm or less, a change in the melt flow pattern occurs as the turbulent flow is generated .

Therefore, if the maximum magnetic field position MGP is controlled in the range of 200 mm to -300 mm, the melt flow pattern can be formed uniformly.

FIG. 6 is a graph showing the melt flow according to the magnetic field strength (MI) of the present invention. When the magnetic field strength (MI) is 1500 G or less, a change in the melt flow pattern is generated as turbulent flow is generated, It is difficult to form the phase magnetic field strength (MI) as large as 4000 G or more.

Therefore, if the magnetic field intensity (MI) is controlled in the range of 1500G to 4000G, the melt flow pattern can be formed uniformly.

110: chamber 120: crucible
130: heater 140: insulation
150: heat shield member 160: magnetic field applying unit

Claims (10)

A crucible for receiving a melt;
A seed cable for pulling up the single crystal ingot from the melt of the crucible;
A heater for heating the crucible; And
And a magnetic field applying unit applying a magnetic field to the melt of the crucible,
Wherein the crucible and the seed cable are rotated in the same direction when the single crystal ingot is grown. The method according to claim 1,
Wherein the heater comprises a side heater and a bottom heater for separately heating a side surface and a bottom surface of the crucible,
Wherein the side heater and the bottom heater are operated to heat the crucible upon growing a single crystal ingot. 3. The method of claim 2,
Wherein a maximum magnetic field position (MGP) of the magnetic field applying unit is limited to a range of 200 to -300 mm. The method of claim 3,
Wherein the magnetic field intensity (MI) of the magnetic field applying unit is limited to a range of 1500 to 4000G. 3. The method of claim 2,
(MI-MGP) / MI defined as a value obtained by dividing a value obtained by subtracting the maximum magnetic field position (MGP) from the magnetic field intensity (MI) by the magnetic field strength (MI) is limited to a range of 0.86 to 1.2. Device. A first step of heating a crucible containing a melt;
A second step of applying a magnetic field to the melt of the crucible; And
And a third step of pulling up the single crystal ingot by means of the melted metal cable of the crucible,
Wherein the crucible and the seed cable are rotated in the same direction during the growth of the single crystal ingot in the third step. The method according to claim 6,
And simultaneously heating the side surface and the bottom surface of the crucible during the single crystal ingot growth in the third step. 8. The method of claim 7,
Wherein a maximum magnetic field position (MGP) is limited to a range of 200 to -300 mm during the monocrystalline ingot growth in the third step. 9. The method of claim 8,
Wherein the magnetic field intensity (MI) is limited to a range of 1500 to 4000 G during the monocrystalline ingot growth in the third step. 8. The method of claim 7,
(MI-MGP) / MI defined as a value obtained by dividing a value obtained by subtracting a maximum magnetic field position (MGP) from a magnetic field intensity (MI) by a magnetic field strength (MI) during a single- 1.2 < / RTI > range.
KR1020160008043A 2016-01-22 2016-01-22 Single crystal ingot growth apparatus and the growing method of it KR20170088120A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110685011A (en) * 2019-10-21 2020-01-14 大同新成新材料股份有限公司 Intelligent processing equipment for producing single-product silicon thermal field crucible and processing method thereof
WO2020122438A1 (en) * 2018-12-10 2020-06-18 웅진에너지 주식회사 Ingot growing apparatus
KR102137336B1 (en) * 2019-02-08 2020-07-23 에스케이실트론 주식회사 Apparatus of growing a single crystal ingot and method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020122438A1 (en) * 2018-12-10 2020-06-18 웅진에너지 주식회사 Ingot growing apparatus
KR102137336B1 (en) * 2019-02-08 2020-07-23 에스케이실트론 주식회사 Apparatus of growing a single crystal ingot and method thereof
CN110685011A (en) * 2019-10-21 2020-01-14 大同新成新材料股份有限公司 Intelligent processing equipment for producing single-product silicon thermal field crucible and processing method thereof

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