KR101466975B1 - a method for manufacturing thin film with high crystallinity and a thin film manufactured thereof - Google Patents
a method for manufacturing thin film with high crystallinity and a thin film manufactured thereof Download PDFInfo
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- KR101466975B1 KR101466975B1 KR1020130076213A KR20130076213A KR101466975B1 KR 101466975 B1 KR101466975 B1 KR 101466975B1 KR 1020130076213 A KR1020130076213 A KR 1020130076213A KR 20130076213 A KR20130076213 A KR 20130076213A KR 101466975 B1 KR101466975 B1 KR 101466975B1
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- thin film
- crystallization
- heat treatment
- metal element
- magnetic field
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- 239000010409 thin film Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 238000002425 crystallisation Methods 0.000 claims abstract description 64
- 230000008025 crystallization Effects 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000003054 catalyst Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 57
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 21
- 239000013078 crystal Substances 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910012990 NiSi2 Inorganic materials 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention relates to a method of producing a thin film having improved crystallinity and a thin film produced thereby. More particularly, the present invention relates to a method of producing a thin film having improved crystallinity by simultaneously applying a metal element and a magnetic field of a crystallization catalyst, and a thin film produced thereby. A method for crystallizing an amorphous thin film using a crystallization catalyst metal is characterized in that a magnetic field is simultaneously applied during heat treatment of the amorphous thin film. According to the present invention, a thin film having a high crystallinity can be manufactured by applying a magnetic field during heat treatment, as compared with a case where a magnetic field is not applied during heat treatment. And the residual amount of the crystallization catalyst metal element can be remarkably reduced. In addition, the crystal size of the thin film can be controlled by adjusting the ion implantation conditions of the crystallization catalyst metal element. In addition, since the heat treatment temperature can be lowered, the present invention can be applied to a case where a flexible substrate is used. In addition, since the heat treatment temperature is low and the heat treatment time can be shortened, the production cost can be reduced.
Description
The present invention relates to a method of producing a thin film having improved crystallinity and a thin film produced thereby. More particularly, the present invention relates to a method of producing a thin film having improved crystallinity by simultaneously applying a metal element and a magnetic field of a crystallization catalyst, and a thin film produced thereby.
The use of polycrystalline semiconductor thin films, which have a Hall mobility of about 100 times higher than that of amorphous semiconductor thin films, is becoming important in thin film transistors, thin film solar cells, and three-dimensional integrated circuits .
There are four main ways to make polycrystalline thin films.
Solid phase crystallization (SPC) is a method of crystallizing by heating at a temperature above the recrystallization temperature (S. Yamaguchi, et al, J. Appl. Phys., 89, 2091, 2001) A polycrystalline thin film of good quality can be obtained, but a substrate which can withstand a temperature higher than the recrystallization temperature (600 ° C or higher on the basis of silicon) must be used, and the annealing time is long as several tens of hours, .
There is a method of crystallizing joule's by applying electric current in a similar way (Korean Patent Laid-Open No. 2010-0121202). It is also necessary to use a substrate that can withstand high temperatures, There is a problem that the crystal size is uneven.
Next, a method of using an excimer laser to crystallize an amorphous thin film by irradiating the amorphous thin film for a few seconds, which is mainly used today, is expensive because the laser equipment and its maintenance cost are high, and when the laser is irradiated, It is difficult to form a thin film having a uniform crystal size because the size is uneven.
Finally, there are metal induced crystallization (MIC) and metal induced lateral crystallization (MILC) methods, which are metal induction crystallization methods, which crystallize the metal by lowering the recrystallization temperature using a metal as a catalyst (Korean Patent Laid Open Publication No. 2011-0312808). This is because the temperature required for crystallization is relatively low and the time for crystallization is relatively short compared to other processes, and thus much research has been conducted. However, there is a disadvantage that the metal remaining in the thin film acts as an impurity after the crystallization.
There is a limit to the method of crystallizing a metal thin film which is a conventional metal induced crystallization method, and a method capable of reducing the amount of metal remaining in the crystallized semiconductor thin film and achieving a short time heat treatment at a low temperature is needed.
The present invention provides a method for producing a thin film having a high degree of crystallinity and a small residual amount of a crystallization catalyst metal element even when the amorphous thin film is heat-treated at a low temperature for a relatively short period of time.
One aspect of the present invention is a method of manufacturing a thin film having improved crystallinity, wherein a magnetic field is simultaneously applied during the heat treatment of the amorphous thin film in a method of crystallizing the amorphous thin film using a crystallization catalyst metal.
After the crystallization catalyst metal element is ion-implanted into the substrate, the amorphous thin film may be formed on the ion-implanted substrate.
After forming the amorphous thin film on the substrate, the crystallization catalyst metal element may be ion-implanted into the amorphous thin film.
The ion implantation process can be performed by a plasma ion implantation process of 1 keV to 5 keV.
The substrate may comprise a glass substrate.
The amorphous thin film may include an amorphous silicon thin film.
The crystallization catalyst metal element may include at least one member selected from the group consisting of nickel, cobalt, manganese, magnetic elements including iron, and alloys thereof.
The magnetic field can be applied in a direction perpendicular to the substrate.
According to the present invention, a thin film having a high degree of crystallinity can be manufactured by applying a magnetic field during the heat treatment, as compared with the case where no magnetic field is applied during the heat treatment.
In the case where a thin film transistor substrate made of a metal induced crystallization and a polycrystalline thin film are used, the residual amount of the crystallization catalyst metal element, which is the most not yet commercialized, Can be significantly reduced.
In addition, the crystal size of the thin film can be controlled by adjusting the ion implantation conditions of the crystallization catalyst metal element.
In addition, since the heat treatment temperature can be lowered compared to a case where a magnetic field is not applied, the present invention can be applied to a case of using a flexible substrate.
In addition, since the heat treatment temperature is low and the heat treatment time can be shortened, the production cost can be reduced.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view illustrating a method of manufacturing a thin film having improved crystallinity according to an aspect of the present invention. FIG.
2 is a schematic view of an apparatus used for plasma ion implantation of a crystallization catalyst metal element and deposition of an amorphous thin film.
Fig. 3 is a diagram showing the comparison between the embodiments (MMIC) and the comparative example (MIC) during heat treatment.
4 shows the results of XRD analysis of Example (MMIC), Comparative Example (MIC) and as-deposited.
5 shows the AES analysis results of the example (MMIC) and the comparative example (MIC).
6 shows the Raman analysis results of the example (MMIC) and the comparative example (MIC).
Hereinafter, preferred aspects of the present invention will be described with reference to the accompanying drawings. Aspects of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, aspects of the invention are provided to more fully describe the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view illustrating a method of manufacturing a thin film having improved crystallinity according to an aspect of the present invention. FIG. Referring to FIG. 1, one aspect of the present invention is a method for crystallizing an amorphous thin film using a crystallization catalyst metal, wherein a magnetic field is simultaneously applied during the heat treatment of the amorphous thin film, .
First, the sample to be used for the heat treatment can be prepared as follows. The amorphous thin film may be formed on the substrate by ion implantation of the crystallization catalyst metal element into the substrate and then the amorphous thin film may be formed on the ion implanted substrate. A sample in which a metal element is implanted may be used.
The substrate may comprise a glass substrate. However, the present invention is not limited thereto, and a flexible plastic substrate or the like may be used.
The crystallization catalyst metal element may include at least one member selected from the group consisting of nickel, cobalt, manganese, magnetic elements including iron, and alloys thereof. Since metal elements such as nickel, iron, cobalt, and manganese have ferromagnetism, the diffusion rate may greatly increase under a magnetic field.
When the amorphous thin film is an amorphous silicon thin film, it is preferable to use nickel as the crystallization catalyst metal element. Instead of nickel, cobalt, manganese, iron and the like can be used. However, since the lattice constant of NiSi2 is similar to the lattice constant of silicon and is the same as that of silicon, it is preferable to use nickel because mismatch with silicon is small.
An ion implantation process can be performed using the apparatus shown in FIG. The ion implantation can be performed by a plasma ion implantation process of 1 keV to 5 keV. When a high voltage pulse is applied at a low voltage of -1 kV or less, the depth of ion implantation is too small. If a high voltage pulse of -10 kV or more is applied, not only an arc is generated in the insulator sample but also the depth of the implanted crystallization catalyst element It may be difficult to serve as a crystallization catalyst for promoting the crystallization of the amorphous thin film because the distance between the implanted crystallization catalyst elements and the semiconductor amorphous thin film on which the ion implanted crystallized catalysts are deposited is too great.
An
The crystal size of the thin film can be controlled by adjusting the ion implantation conditions of the crystallization catalyst metal element. If the amount of ions implanted is large, the number of sites that serve as nuclei for crystallization increases, so that the crystallization speed is increased, the time can be shortened, and the crystal size of the thin film can be reduced. On the other hand, if the amount of injected ions is small, the crystallization rate is slowed because the number of sites that act as nuclei of crystallization is small, and it may take more time, and the crystal size of the thin film may be large.
By using the apparatus shown in Fig. 2, a thin film of a semiconductor element to be crystallized can be deposited. For the deposition, a general sputtering method or the like can be used. However, the present invention is not limited thereto, and other widely used methods such as CVD, ALD and PVD may be used. The amorphous thin film may include an amorphous silicon thin film.
Next, the amorphous thin film can be subjected to the heat treatment and simultaneously the magnetic field can be applied. The movement of the crystallization catalyst metal element is promoted by the magnetic field to promote the crystallization of the amorphous thin film and the amount of the crystallization catalyst metal element remaining in the thin film can be reduced.
The magnetic field can be applied in a direction perpendicular to the substrate. The magnetic field can be applied using a coil or a magnet. By applying a magnetic field, the movement of the crystallization catalyst metal element can be promoted. As a result, the crystallization of the amorphous thin film is promoted to shorten the time required for crystallization of the amorphous thin film, and the amount of the crystallization catalyst metal element remaining in the amorphous thin film can be remarkably reduced.
The direction of the magnetic field can be determined in consideration of the moving direction of the crystallization promoting metal element. The magnetization and the crystallization catalyst metal element are located on the opposite sides relative to the amorphous thin film, so that the crystallization catalyst metal element is attracted to the magnetic field generated by the magnet during the heat treatment to effectively pass and move the amorphous thin film. That is, when the crystallization catalyst metal element is present at the bottom of the amorphous thin film, the magnet may be positioned at the top of the amorphous thin film, and if the crystallization catalyst metal element is present at the top of the amorphous thin film, the magnet may be positioned at the bottom of the amorphous thin film .
The magnet can be fixed so that it does not shake or move during the heat treatment process, and the metal element constituting the magnet does not come into direct contact with the amorphous thin film.
Since the magnetic field formed through the magnet improves the movement of the crystallization catalyst metal element, crystallization of the amorphous thin film can proceed more easily as the crystallization catalyst metal element passes through the amorphous thin film, Crystallization of the amorphous thin film can be achieved and the amount of the crystallization catalyst metal element remaining in the amorphous metal thin film can be reduced.
Even when a coil is used as a magnetic field source, the coil can be arranged in consideration of the moving direction of the crystallization catalyst metal element, as in the case of using a magnet.
Hereinafter, the present invention will be described in more detail with reference to specific examples and comparative examples.
Nickel ion implantation on glass substrate
Using the apparatus of Fig. 2, a crystallization catalyst metal element (nickel) was plasma-ion-implanted into the glass substrate 10 as follows. Corning eagle 2,000 glass having a size of 15 mm x 15 mm x 0.65 mm was used as the glass substrate 10. Specifically, it is as described below.
Argon gas was drawn into the
Since the average power has a pulse power of about 2.2 W / cm 2 , it is difficult to obtain nickel ionization in the nickel target in terms of average power. However, the peak power of the nickel
As the
The nickel plasma ion implantation process was performed for about 5 minutes by operating the nickel
Amorphous
Silicon thin film deposition
After the ion implantation, in order to remove the nickel plasma atmosphere generated in the first process without breaking the vacuum of the vacuum chamber (1), the argon gas was removed in a few seconds and the initial low vacuum state was created again. After introducing an argon gas of about 0.1 mTorr to 10 mTorr under a low vacuum state, a plasma is generated in the silicon magnetron deposition source 5 using direct current sputtering in the same manner as a general sputtering deposition method, A silicon thin film was deposited.
Amorphous
Crystallization of silicon thin film
Two specimens prepared as described above were prepared. One of them was placed on the upper portion of the sample (MMIC, Magnetic Metal Induced Crystallization) (Example), and the other was a magnet Metal Induced Crystallization (Comparative Example). An AlNiCo permanent magnet was used as the magnet. The magnets and the sample were arranged so as not to come into direct contact with each other.
The two samples were placed in a vacuum chamber equipped with a ceramic heater, and a nitrogen atmosphere was made. The heater was turned on to raise the temperature of the sample mounting table to 470 DEG C over 1 hour at room temperature, followed by heat treatment for 4 hours, Thereafter, it was cooled to room temperature at 470 캜.
evaluation
XRD (X-ray diffraction) analysis was performed to confirm crystallinity of the silicon thin film, and the results are shown in FIG. Referring to FIG. 4, no crystalline peak was observed when silicon was deposited (reference example, as-deposited). In the case where there is no magnet (Comparative Example, MIC), a crystalline peak is observed. However, in the case of a magnet (Example, MMIC), a crystalline peak is observed to be larger. From this point, And the crystallinity is further improved when a magnet is used.
In order to confirm the amount of nickel remaining in the silicon thin film, AES analysis was performed, and the results are shown in FIG. Referring to FIG. 5, the remaining nickel content was 6.40 at.% In the case of no magnet (MIC, comparative example), but the remaining nickel content was 1.80 at.% In the case of a magnet (MMIC, Example). It was confirmed from this that the amount of the crystallization catalyst metal element remaining in the thin film when the magnet was used was small.
The degree of crystallization of silicon was confirmed through RAMAN analysis, and the results are shown in FIG. FIG. 6A shows a case where a magnet is not used (comparative example, MIC), and FIG. 6B shows a case where a magnet is used (an example, MMIC). Referring to FIG. 6, when there is no magnet, a peak corresponding to NiSi was observed. When the magnet was used, the peak was not observed but flat. Instead, a peak corresponding to poly silicon was clearly observed. From this point of view, it can be confirmed that the crystallization of silicon is progressed more when the magnet is used.
1: Vacuum tank
2: Crystallization catalyst element Magnetron deposition source
3: DC and pulse DC power supply
4: Deposition source high voltage pulse
5: Semiconductor element magnetron evaporation source
6: DC and pulse DC power supply
7: RF power section
8: RF power section
9: RF matching section
10: Sample
11: Sample mounting base
12: Vacuum pump
13: Vacuum measuring device
14: Gas flow rate regulator
15: Plasma generating gas introducing device
16: High-voltage pulse power supply
17: Sample mounting band high voltage pulse
18: Vacuum tank
19: Magnets
20: Lead shielding
Claims (8)
Ion-implanting a crystallization catalyst metal element onto a glass substrate;
Forming an amorphous thin film on the ion implanted glass substrate;
Wherein the amorphous thin film is annealed and a magnetic field is applied to the amorphous thin film.
Wherein the ion implantation process is performed by a plasma ion implantation process of 1 keV to 5 keV.
Wherein the amorphous thin film comprises an amorphous silicon thin film.
Wherein the crystallization catalyst metal element includes at least one selected from the group consisting of a magnetic element including nickel, cobalt, manganese, iron, and an alloy thereof.
Wherein the magnetic field is applied in a direction perpendicular to the glass substrate.
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| KR1020130076213A KR101466975B1 (en) | 2013-07-01 | 2013-07-01 | a method for manufacturing thin film with high crystallinity and a thin film manufactured thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020130076213A KR101466975B1 (en) | 2013-07-01 | 2013-07-01 | a method for manufacturing thin film with high crystallinity and a thin film manufactured thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308008A (en) * | 2000-04-24 | 2001-11-02 | Sharp Corp | Method of forming crystalline semiconductor thin film |
| KR20030008752A (en) * | 2001-07-20 | 2003-01-29 | 학교법인 경희대학교 | The method of crystallization of amorphous silicon for liquid-crystal display |
| KR20080055367A (en) * | 2006-12-15 | 2008-06-19 | 엘지디스플레이 주식회사 | Method of si crystallizing using an alternating magnetic field |
| KR20080065460A (en) * | 2007-01-09 | 2008-07-14 | 엘지전자 주식회사 | Manufacturing method of poly-crystal silicon photovoltaic device having low-temperature using horizontally metal induced crystallization method |
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- 2013-07-01 KR KR1020130076213A patent/KR101466975B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308008A (en) * | 2000-04-24 | 2001-11-02 | Sharp Corp | Method of forming crystalline semiconductor thin film |
| KR20030008752A (en) * | 2001-07-20 | 2003-01-29 | 학교법인 경희대학교 | The method of crystallization of amorphous silicon for liquid-crystal display |
| KR20080055367A (en) * | 2006-12-15 | 2008-06-19 | 엘지디스플레이 주식회사 | Method of si crystallizing using an alternating magnetic field |
| KR20080065460A (en) * | 2007-01-09 | 2008-07-14 | 엘지전자 주식회사 | Manufacturing method of poly-crystal silicon photovoltaic device having low-temperature using horizontally metal induced crystallization method |
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