KR101459718B1 - 무기 코팅층 및 고분자 코팅층을 포함하는 색변환 필름 및 이의 제조방법 - Google Patents
무기 코팅층 및 고분자 코팅층을 포함하는 색변환 필름 및 이의 제조방법 Download PDFInfo
- Publication number
- KR101459718B1 KR101459718B1 KR1020130028648A KR20130028648A KR101459718B1 KR 101459718 B1 KR101459718 B1 KR 101459718B1 KR 1020130028648 A KR1020130028648 A KR 1020130028648A KR 20130028648 A KR20130028648 A KR 20130028648A KR 101459718 B1 KR101459718 B1 KR 101459718B1
- Authority
- KR
- South Korea
- Prior art keywords
- color conversion
- coating layer
- conversion film
- light emitting
- oxide
- Prior art date
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- 239000011247 coating layer Substances 0.000 title claims abstract description 112
- 229920000642 polymer Polymers 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000008859 change Effects 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 169
- 239000000463 material Substances 0.000 claims abstract description 65
- 239000010410 layer Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000002096 quantum dot Substances 0.000 claims description 101
- 238000000231 atomic layer deposition Methods 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000002952 polymeric resin Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229920002050 silicone resin Polymers 0.000 claims description 9
- 229920003002 synthetic resin Polymers 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 5
- 239000011707 mineral Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 229920005749 polyurethane resin Polymers 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- 239000011148 porous material Substances 0.000 abstract description 6
- 238000011049 filling Methods 0.000 abstract description 4
- 238000007539 photo-oxidation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 129
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 58
- 238000006862 quantum yield reaction Methods 0.000 description 32
- 238000000151 deposition Methods 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 17
- 230000008021 deposition Effects 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 10
- 238000003917 TEM image Methods 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- -1 tanitanium oxide Chemical compound 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 238000006731 degradation reaction Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004020 luminiscence type Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001194 electroluminescence spectrum Methods 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 3
- 238000013507 mapping Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229920005573 silicon-containing polymer Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130028648A KR101459718B1 (ko) | 2013-03-18 | 2013-03-18 | 무기 코팅층 및 고분자 코팅층을 포함하는 색변환 필름 및 이의 제조방법 |
PCT/KR2014/002264 WO2014148792A1 (fr) | 2013-03-18 | 2014-03-18 | Film de conversion de couleur comprenant une couche de revêtement inorganique et une couche de revêtement polymère, et son procédé de fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130028648A KR101459718B1 (ko) | 2013-03-18 | 2013-03-18 | 무기 코팅층 및 고분자 코팅층을 포함하는 색변환 필름 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20140114163A KR20140114163A (ko) | 2014-09-26 |
KR101459718B1 true KR101459718B1 (ko) | 2014-11-12 |
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KR1020130028648A KR101459718B1 (ko) | 2013-03-18 | 2013-03-18 | 무기 코팅층 및 고분자 코팅층을 포함하는 색변환 필름 및 이의 제조방법 |
Country Status (2)
Country | Link |
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KR (1) | KR101459718B1 (fr) |
WO (1) | WO2014148792A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160069829A (ko) * | 2014-12-09 | 2016-06-17 | 한국기계연구원 | 양자점 트랜지스터의 제조 방법 |
CN111615652A (zh) * | 2018-11-12 | 2020-09-01 | 株式会社Lg化学 | 色彩转换膜、以及包括其的背光单元和显示装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101748991B1 (ko) * | 2015-03-27 | 2017-06-21 | 주식회사 엘지화학 | 발광 필름 |
US11024778B2 (en) | 2015-06-10 | 2021-06-01 | Research & Business Foundation Sungkyunkwan University | Large scale film containing quantum dots or dye, and production method therefor |
KR102031579B1 (ko) * | 2016-06-29 | 2019-10-14 | 사빅 글로벌 테크놀러지스 비.브이. | 방열 필름을 이용한 인광체 필름 제조 |
KR102544328B1 (ko) * | 2017-12-22 | 2023-06-19 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
EP3757630B1 (fr) * | 2018-11-12 | 2022-07-20 | Lg Chem, Ltd. | Dispositif d'affichage comprenant une unité de rétroéclairage comprenant un film de conversion de couleur |
EP3757631B1 (fr) * | 2018-11-12 | 2022-09-14 | Lg Chem, Ltd. | Film de conversion de couleur, et unité de rétroéclairage et dispositif d'affichage le comprenant |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080068526A (ko) * | 2007-01-19 | 2008-07-23 | 키스마트 코포레이션 | 파장 변환 구조 및 그의 제조방법과 용도 |
KR20090091552A (ko) * | 2008-02-25 | 2009-08-28 | 한국과학기술연구원 | 백색 및 컬러 광 여기 발광시트 및 그의 제조방법 |
KR20120067167A (ko) * | 2010-12-15 | 2012-06-25 | 한국과학기술연구원 | 색변환 발광시트 및 이의 제조 방법 |
KR20120074899A (ko) * | 2010-12-28 | 2012-07-06 | 엘지전자 주식회사 | 광소자 및 이를 이용한 발광 다이오드 패키지, 백라이트 장치 |
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2013
- 2013-03-18 KR KR1020130028648A patent/KR101459718B1/ko active IP Right Grant
-
2014
- 2014-03-18 WO PCT/KR2014/002264 patent/WO2014148792A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080068526A (ko) * | 2007-01-19 | 2008-07-23 | 키스마트 코포레이션 | 파장 변환 구조 및 그의 제조방법과 용도 |
KR20090091552A (ko) * | 2008-02-25 | 2009-08-28 | 한국과학기술연구원 | 백색 및 컬러 광 여기 발광시트 및 그의 제조방법 |
KR20120067167A (ko) * | 2010-12-15 | 2012-06-25 | 한국과학기술연구원 | 색변환 발광시트 및 이의 제조 방법 |
KR20120074899A (ko) * | 2010-12-28 | 2012-07-06 | 엘지전자 주식회사 | 광소자 및 이를 이용한 발광 다이오드 패키지, 백라이트 장치 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160069829A (ko) * | 2014-12-09 | 2016-06-17 | 한국기계연구원 | 양자점 트랜지스터의 제조 방법 |
KR101642131B1 (ko) * | 2014-12-09 | 2016-07-22 | 한국기계연구원 | 양자점 트랜지스터의 제조 방법 |
CN111615652A (zh) * | 2018-11-12 | 2020-09-01 | 株式会社Lg化学 | 色彩转换膜、以及包括其的背光单元和显示装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2014148792A1 (fr) | 2014-09-25 |
KR20140114163A (ko) | 2014-09-26 |
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