KR101451926B1 - Electronic device and method for manufacturing the same, and method for manufacturing thin film transistor - Google Patents
Electronic device and method for manufacturing the same, and method for manufacturing thin film transistor Download PDFInfo
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- KR101451926B1 KR101451926B1 KR1020140031724A KR20140031724A KR101451926B1 KR 101451926 B1 KR101451926 B1 KR 101451926B1 KR 1020140031724 A KR1020140031724 A KR 1020140031724A KR 20140031724 A KR20140031724 A KR 20140031724A KR 101451926 B1 KR101451926 B1 KR 101451926B1
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- metal oxide
- substrate
- thin film
- oxide thin
- precursor solution
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- 239000010409 thin film Substances 0.000 title claims abstract description 147
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 94
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 94
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 239000012702 metal oxide precursor Substances 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 229910003437 indium oxide Inorganic materials 0.000 claims description 25
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000002243 precursor Substances 0.000 claims description 19
- 238000010030 laminating Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims 5
- 239000010410 layer Substances 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- KYCHGXYBBUEKJK-UHFFFAOYSA-K indium(3+);trichloride;hydrate Chemical compound O.Cl[In](Cl)Cl KYCHGXYBBUEKJK-UHFFFAOYSA-K 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to an electronic device, a method of manufacturing the same, and a method of manufacturing a thin film transistor. An electronic device according to an embodiment of the present invention includes: a substrate; And a plurality of metal oxide thin films formed on the substrate and having the same composition and composition for each layer.
Description
The present invention relates to an electronic device, a method of manufacturing the same, and a method of manufacturing a thin film transistor.
BACKGROUND ART [0002] Recently, research on an oxide semiconductor device to replace an a-Si based semiconductor device is underway. The oxide semiconductor device is a semiconductor device including a thin film composed of a metal oxide, and has excellent electrical and optical characteristics as compared with an a-Si based semiconductor device, and is attracting attention as a switching device of a display panel.
When an oxide thin film is formed through a solution process instead of using a conventional vacuum deposition technique in the production of an oxide semiconductor device, the manufacturing cost can be reduced and a thin film can be selectively formed in a part of the substrate using an ink jet process or the like .
However, the solution process involves a high-temperature heat treatment process at a temperature of 500 ° C or higher for sintering the thin film and decomposing organic materials, thereby causing a problem that the substrate is deformed or changed in properties when the thin film is formed on a glass substrate or a plastic substrate .
An embodiment of the present invention is to provide an electronic device capable of lowering a heat treatment temperature in forming a thin film by a solution process, a manufacturing method thereof, and a method of manufacturing a thin film transistor.
It is an object of the present invention to provide an electronic device, a method of manufacturing the same, and a method of manufacturing a thin film transistor, which do not deform the substrate or change the properties of the substrate during the formation of the thin film.
An electronic device according to an embodiment of the present invention includes: a substrate; And a plurality of metal oxide thin films formed on the substrate and having the same composition and composition for each layer.
Each metal oxide thin film may contain as much metal as the target metal amount required for the target thickness of the plurality of metal oxide thin films divided by the number of the metal oxide thin films.
The metal oxide thin film may include indium oxide.
The number of the metal oxide thin films may be from 2 to 7.
The number of the metal oxide thin films may be three.
A method of manufacturing an electronic device according to an embodiment of the present invention includes: applying a metal oxide precursor solution to a substrate; Heat treating the substrate to form a metal oxide thin film; And repeating the application of the metal oxide precursor solution on the metal oxide thin film and the heat treatment of the substrate to laminate a plurality of metal oxide thin films having the same composition and composition in each layer.
The metal oxide precursor solution may have a metal mole concentration as large as the target metal mole concentration required for the target thickness of the plurality of metal oxide thin films divided by the number of the metal oxide thin films.
The heat treatment may be performed for a time period corresponding to the heat treatment time required for forming the metal oxide thin film with the metal oxide precursor solution having the target metal mole concentration divided by the number of the metal oxide thin films.
The metal oxide precursor solution may include an indium oxide precursor solution.
The metal oxide precursor solution may have a metal mole concentration of 0.01 to 0.5 M.
The metal oxide precursor solution may have a metal mole concentration of 0.1 M.
The step of heat-treating the substrate to form a metal oxide thin film may include: heat treating the substrate at 240 to 250 ° C.
The step of heat-treating the substrate at 240 to 250 ° C may include: heat-treating the substrate at 240 to 250 ° C for 40 minutes.
The step of forming the metal oxide thin film by heat-treating the substrate may further include a step of heat-treating the substrate at a temperature lower than 240 캜 before the step of heat-treating the substrate at 240 to 250 캜.
The step of heat-treating the substrate at a temperature lower than 240 ° C may include: heat-treating the substrate at 100 ° C.
The step of heat-treating the substrate at 100 ° C may include: heat treating the substrate at 100 ° C for 5 minutes.
The step of laminating the plurality of metal oxide thin films may include: laminating 2 to 7 metal oxide thin films by repeating the application of the metal oxide precursor solution and the heat treatment of the substrate 1 to 6 times.
The step of laminating the two to seven metal oxide thin films may include a step of laminating the three metal oxide thin films by repeating the application of the metal oxide precursor solution and the heat treatment of the substrate twice.
According to an embodiment of the present invention, there is provided a method of manufacturing a thin film transistor, comprising: applying an indium oxide precursor solution having a metal mole concentration of 0.1 M to a substrate; Heat treating the substrate at 100 ° C for 5 minutes, and then performing heat treatment at 240 to 250 ° C for 40 minutes to form a first channel layer; Applying the indium oxide precursor solution on the first channel layer; Heat treating the substrate at 100 ° C for 5 minutes, and then performing heat treatment at 240 to 250 ° C for 40 minutes to form a second channel layer; Applying the indium oxide precursor solution on the second channel layer; And heat treating the substrate at 100 ° C for 5 minutes and then heat-treating the substrate at 240 to 250 ° C for 40 minutes to form a third channel layer.
According to the embodiment of the present invention, the heat treatment temperature can be lowered when a thin film is formed by a solution process.
According to an embodiment of the present invention, the substrate may not be deformed or changed in properties during the formation of the thin film.
1 is an exemplary cross-sectional view of an electronic device according to an embodiment of the invention.
2 is an exemplary flow chart of an electronic device manufacturing method according to an embodiment of the present invention.
FIGS. 3 and 4 are exemplary views illustrating a process of forming a metal oxide thin film according to an embodiment of the present invention.
5 is an exemplary flow chart of a method of fabricating a thin film transistor in accordance with an embodiment of the present invention.
6 is a graph showing transfer characteristics of a thin film transistor specimen manufactured according to the first embodiment of the present invention and a thin film transistor specimen manufactured according to the first comparative example.
7 is a graph showing transfer characteristics of the thin film transistor specimen manufactured according to the second embodiment of the present invention and the thin film transistor specimen manufactured according to the second comparative example.
8 is a graph showing transfer characteristics of the thin film transistor specimen manufactured according to the third embodiment of the present invention and the thin film transistor specimen manufactured according to the third comparative example.
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings attached hereto.
1 is an exemplary cross-sectional view of an
1, the
Although the
1, the
According to an embodiment of the present invention, the plurality of metal oxide
According to one embodiment, the metal oxide
According to an embodiment of the present invention, the number of the metal oxide thin films included in the
According to one embodiment of the present invention, each metal oxide thin film may include as much metal as the target metal amount required for the target thickness of the plurality of metal oxide thin films divided by the number of the metal oxide thin films.
For example, referring to FIG. 1, the
2 is an exemplary flow diagram of a
As shown in FIG. 2, the electronic
FIGS. 3 and 4 are exemplary views illustrating a process of forming a metal oxide thin film according to an embodiment of the present invention.
Referring to FIG. 3, a metal oxide precursor solution is first applied to the
1, when an
According to one embodiment of the present invention, the metal oxide precursor solution may have a metal mole concentration as large as the target metal mole concentration required for the target thickness t of the plurality of metal oxide thin films divided by the number of the metal oxide thin films .
For example, when a metal oxide precursor solution of 0.3 M is required to obtain a metal oxide thin film having a predetermined thickness, and a total of three metal oxide thin film layers are formed, the metal oxide precursor solution is a metal of 0.3 / 3 = 0.1 M And may have a molar concentration.
That is, according to the embodiment of the present invention, as the number of metal oxide thin films increases, the concentration of the metal oxide precursor solution decreases, and even if the number of metal oxide thin films increases, the thickness of the metal oxide thin films included in the
According to one embodiment, the metal oxide precursor solution includes, but is not limited to, an indium oxide precursor solution. That is, the precursor solution may be changed depending on the kind of the metal constituting the metal oxide thin film.
According to one embodiment, the metal oxide precursor solution may have a metal mole concentration of 0.01 to 0.5 M, and may have a metal mole concentration of 0.1 M, but is not limited thereto.
Referring to FIG. 4, a metal oxide thin film may be formed by applying a solution and then heat-treating the
Through the heat treatment, the solvent in the metal oxide precursor solution applied to the
According to an embodiment of the present invention, the heat treatment is performed for a period of time as long as the heat treatment time required for forming the metal oxide thin film with the metal oxide precursor solution having the target metal mole concentration is divided by the number of the metal oxide thin films .
For example, when a metal oxide thin film is formed by the above-described 0.3 M metal oxide precursor solution, a heat treatment for 3 hours is required, and when a total of three metal oxide thin films are formed, / 3 = 40 minutes heat treatment can be performed.
That is, according to the embodiment of the present invention, as the number of the metal oxide thin films increases, the time of the heat treatment performed to form each metal oxide thin film is reduced, and even if the number of the metal oxide thin films increases, The total time of the heat treatment performed to form the oxide thin film is constant.
According to an embodiment of the present invention, the step S220 of forming the metal oxide thin film by heat-treating the
According to one embodiment, the step of heat-treating the
According to an embodiment of the present invention, the step S220 of forming the metal oxide thin film by heat-treating the
For example, the step of heat-treating the
According to one embodiment, the step of heat-treating the
As described above, the number of the metal oxide thin films may be 2 or more, for example, 2 to 7, and the step of laminating the plurality of metal oxide thin films may include coating the metal oxide precursor solution, Of the metal oxide thin film may be repeated one to six times to laminate two to seven metal oxide thin films.
When the number of the metal oxide thin films is 3, the step of laminating the plurality of metal oxide thin films may include repeating the application of the metal oxide precursor solution and the heat treatment of the
5 is an exemplary flow diagram of a
As shown in FIG. 5, the thin film
The thin film
Indium chloride hydrate (InCl 3 .XH 2 O) was used as a metal oxide precursor to produce the thin film transistor. 2-methoxyethanol (C 3 H 8 O 2 ) was used as a solvent Respectively.
In this example, a total of three indium oxide thin films were formed using a 0.1 M indium oxide precursor solution, and a single indium oxide thin film was formed using a 0.3 M indium oxide precursor solution as a comparative example.
Specifically, the indium oxide precursor solution was stirred at 70 DEG C at 300 rpm using a magnetic bar, and the stirred solution was filtered using a syringe filter and then applied to a substrate.
The substrate was prepared by thermally growing SiO 2 on a P + doped Si substrate. Ultrasonic cleaning was performed for 10 minutes each in the order of acetone, methanol, and DI-water in order to remove organic substances and impurities that might be on the substrate surface, and then blurring was performed using nitrogen gas.
Thereafter, to remove the organic matter adsorbed on the substrate and to form a hydrophilic surface by forming a large amount of OH - groups on the surface and to increase the wettability of the solution, a deep UV ozone generator with wavelengths of 185 nm and 254 nm was used for 15 minutes Surface treatment was carried out.
The solution was applied by a spin coating technique. Specifically, the indium oxide precursor solution was coated on the substrate and then spun at 500 rpm for 10 seconds, 1500 rpm for 15 seconds, 3000 rpm for 30 seconds, 1500 rpm for 15 seconds, and 500 rpm for 10 seconds Spin coating was performed.
As a first embodiment of the present invention, a substrate coated with a 0.1 M indium oxide precursor solution was subjected to a linear heat treatment at a hot plate temperature of 100 DEG C for 5 minutes, followed by a post-heat treatment at 40 DEG C for 40 minutes at a hot plate temperature of 240 DEG C Respectively. Then, the application of the solution and the heat treatment of the substrate were further performed twice to form a total of three layers of indium oxide thin films.
In the second and third embodiments of the present invention, specimens were prepared by changing the post-annealing temperatures of the first embodiment of the present invention to 230 ° C and 250 ° C, respectively.
As a first comparative example, a substrate coated with a 0.3 M indium oxide precursor solution was subjected to a linear heat treatment at a hot plate temperature of 100 占 폚 for 5 minutes, followed by a post-heat treatment at 240 占 폚 for 2 hours in an atmosphere atmosphere , A single layer of indium oxide thin film was formed.
As Comparative Examples 2 and 3, specimens were prepared by changing the post-heat treatment temperature to 230 deg. C and 250 deg. C in the first comparative example described above.
Then, aluminum was deposited on the indium oxide thin film to 2000 Å to form source and drain electrodes.
FIG. 6 is a graph showing transfer characteristics of a thin film transistor specimen manufactured according to the first exemplary embodiment of the present invention and a thin film transistor specimen manufactured according to the first comparative example, and FIG. 7 is a cross- FIG. 8 is a graph showing the transfer characteristics of the manufactured thin film transistor specimen and the thin film transistor specimen manufactured according to the second comparative example. FIG. 8 is a graph showing the transmittance characteristics of the thin film transistor specimen produced according to the third embodiment of the present invention, FIG. 3 is a graph showing the transfer characteristics of a thin film transistor specimen manufactured in accordance with the present invention. FIG.
Referring to FIG. 6, the thin film transistor specimens annealed at 230.degree. C. failed to operate as switching elements in both the first embodiment and the first comparative example of the present invention.
However, referring to FIG. 7, the specimen manufactured according to the second embodiment of the present invention operates as a switching element among the thin film transistor specimens heat-treated at 240 ° C., while the specimen manufactured according to the second comparative example has the switching element As shown in FIG.
8, the thin film transistor specimens annealed at 250 ° C. exhibit switching characteristics in both the third and the third comparative examples of the present invention. However, the specimen according to the third embodiment of the present invention is similar to the third comparative example Which is higher than that of the specimen according to the present invention.
The on / off ratio, electron mobility, subthreshold swing and threshold voltage of the thin film transistor measured from the above six specimens are shown in the following table.
(cm 2 / V · s)
(V / decade)
(V)
When a thin film is formed into a multilayer structure using a metal oxide precursor solution having a concentration lower than a target metal mole concentration required for a target thickness t of a metal oxide thin film included in the device, as in the embodiment of the present invention, It is possible to lower the temperature of the heat treatment performed.
This is because the embodiment of the present invention forms a thin film having a thickness thinner than that of a single layer a plurality of times, so that the volatilization of the solvent and the organic material progresses more actively during the heat treatment for each layer.
Furthermore, by forming a thin film in a multi-layer structure other than a single layer, it is possible to obtain the effect of improving the electrical characteristics of the device by filling defects of a thin film such as oxygen vacancy defects with another thin film layer.
While the present invention has been described with reference to the exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Those skilled in the art will appreciate that various modifications may be made to the embodiments described above. The scope of the present invention is defined only by the interpretation of the appended claims.
100: electronic device
110: substrate
120: insulating layer
131: First metal oxide thin film
132: second metal oxide thin film
133: Third metal oxide thin film
140: electrode
Claims (19)
Heat treating the substrate to form a metal oxide thin film; And
Depositing the metal oxide precursor solution on the metal oxide thin film and repeating the heat treatment of the substrate to laminate a plurality of metal oxide thin films having the same composition and composition for each layer;
/ RTI >
Wherein the metal oxide precursor solution has a metal mole concentration that is as large as a target metal mole concentration required for a target thickness of the plurality of metal oxide thin films divided by the number of the metal oxide thin films.
Wherein the heat treatment is performed for a period of time required for dividing the heat treatment time required for forming the metal oxide thin film into the metal oxide precursor solution having the target metal mole concentration divided by the number of the metal oxide thin films.
Heat treating the substrate to form a metal oxide thin film; And
Depositing the metal oxide precursor solution on the metal oxide thin film and repeating the heat treatment of the substrate to laminate a plurality of metal oxide thin films having the same composition and composition for each layer;
/ RTI >
Wherein the metal oxide precursor solution comprises an indium oxide precursor solution.
Heat treating the substrate to form a metal oxide thin film; And
Depositing the metal oxide precursor solution on the metal oxide thin film and repeating the heat treatment of the substrate to laminate a plurality of metal oxide thin films having the same composition and composition for each layer;
/ RTI >
Wherein the metal oxide precursor solution has a metal mole concentration of 0.01 to 0.5 M.
Wherein the metal oxide precursor solution has a metal molar concentration of 0.1 M.
Heat treating the substrate to form a metal oxide thin film; And
Depositing the metal oxide precursor solution on the metal oxide thin film and repeating the heat treatment of the substrate to laminate a plurality of metal oxide thin films having the same composition and composition for each layer;
/ RTI >
The step of heat treating the substrate to form a metal oxide thin film comprises:
And thermally treating the substrate at 240 to 250 ° C.
The step of heat-treating the substrate at 240-250 < 0 >
And thermally treating the substrate at 240 to 250 DEG C for 40 minutes.
The step of heat treating the substrate to form a metal oxide thin film comprises:
Further comprising the step of heat treating the substrate at a temperature lower than 240 캜 before the step of heat-treating the substrate at 240 캜 to 250 캜.
The step of heat-treating the substrate at a temperature lower than 240 캜 includes:
And heat treating the substrate at 100 占 폚.
The step of heat treating the substrate at 100 < 0 >
And thermally treating the substrate at 100 DEG C for 5 minutes.
Heat treating the substrate to form a metal oxide thin film; And
Depositing the metal oxide precursor solution on the metal oxide thin film and repeating the heat treatment of the substrate to laminate a plurality of metal oxide thin films having the same composition and composition for each layer;
/ RTI >
Laminating the plurality of metal oxide thin films comprises:
Applying the metal oxide precursor solution and heat treating the substrate one to six times to laminate two to seven metal oxide thin films.
The step of laminating the two to seven metal oxide thin films includes:
Applying the metal oxide precursor solution and heat treating the substrate two times to laminate the three metal oxide thin films.
Heat treating the substrate at 100 ° C for 5 minutes, and then performing heat treatment at 240 to 250 ° C for 40 minutes to form a first channel layer;
Applying the indium oxide precursor solution on the first channel layer;
Heat treating the substrate at 100 ° C for 5 minutes, and then performing heat treatment at 240 to 250 ° C for 40 minutes to form a second channel layer;
Applying the indium oxide precursor solution on the second channel layer; And
Heat treating the substrate at 100 ° C for 5 minutes, and then heat-treating the substrate at 240 to 250 ° C for 40 minutes to form a third channel layer;
Gt; < / RTI >
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Cited By (1)
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| WO2016129943A1 (en) * | 2015-02-12 | 2016-08-18 | 주성엔지니어링(주) | Thin film transistor and method of manufacturing same |
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| JP2009218562A (en) | 2008-03-07 | 2009-09-24 | Samsung Electronics Co Ltd | Transistor and method of manufacturing the same |
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| WO2016129943A1 (en) * | 2015-02-12 | 2016-08-18 | 주성엔지니어링(주) | Thin film transistor and method of manufacturing same |
| KR101878161B1 (en) * | 2015-02-12 | 2018-07-13 | 주성엔지니어링(주) | Thin film transistor and manufacturing method thereof |
| US10283593B2 (en) | 2015-02-12 | 2019-05-07 | Jusung Engineering Co., Ltd. | Thin film transistor and method for manufacturing the same |
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