KR101438689B1 - Method for forming semiconductor electrode of dye-sensitized solar cells using metal substrate and dye-sensitized solar cells manufactured by the same - Google Patents

Abstract

Disclosed is a method of forming a semiconductor electrode of a dye-sensitized solar cell using a metal substrate having excellent electron recombination prevention effect and a dye-sensitized solar cell produced thereby.
A method of forming a semiconductor electrode of a dye-sensitized solar cell according to the present invention includes the steps of: providing a metal substrate having a corrosion-resistant layer formed on a surface thereof; Coating a solution containing the transition metal oxide precursor on the corrosion inhibiting layer of the metal substrate and drying the coated solution to form an electron recombination barrier layer; Forming a porous metal oxide semiconductor layer on the electron recombination barrier layer; And adsorbing a dye on the surface of the porous metal oxide semiconductor layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a dye-sensitized solar cell, and more particularly, to a method of forming a dye-sensitized solar cell using a metal substrate and a dye-sensitized solar cell produced by the dye-

The present invention relates to a solar cell, and more particularly, to a method of manufacturing a dye-sensitized solar cell using a metal substrate.

Dye-sensitized solar cells (DSSCs), unlike silicon solar cells by conventional pn junctions, are a dye molecule capable of generating electron-hole pairs by absorbing visible light rays And a transition metal oxide that transfers generated electrons as a main constituent material.

In general, a dye-sensitized solar cell includes a porous transition metal oxide layer on which dye molecules that absorb light and generate electrons are adsorbed between two glass substrates facing each other, a catalyst thin film electrode facing the transition metal oxide layer, And the electrolyte is interposed between the electrodes.

Among the components of the above-described dye-sensitized solar cell, the glass substrate is coated with a conductive transparent electrode on its surface. As the conductive transparent electrode, fluorine doped tin oxide (FTO) is mainly used because the FTO has the lowest reactivity with the electrolyte and is stable even for a long time.

However, the FTO-coated glass substrate is relatively expensive, occupying 60% of the total cost of the solar cell, has a relatively large resistance of 10 to 15? / Cm 2, and is fragile. Further, due to the non-warp characteristic, it is difficult to introduce a flexible dye-sensitized solar cell.

A related prior art is Korean Patent No. 10-0786334 (published on Dec. 17, 2007), which discloses a glass substrate on which an FTO thin film is deposited. In recent years, flexible dye-sensitized solar cells have attracted attention, and researches thereof have been actively conducted.

An object of the present invention is to provide a dye-sensitized solar cell capable of introducing flexibility into a substrate and improving the efficiency of a cell and a method of manufacturing the same.

According to another aspect of the present invention, there is provided a method of forming a semiconductor electrode of a dye-sensitized solar cell, comprising: providing a metal substrate having a corrosion-resistant layer formed on a surface thereof; Applying a solution containing a precursor of a transition metal oxide on a corrosion inhibiting layer of the metal substrate and drying the coated solution to form an electron recombination barrier layer; Forming a porous metal oxide semiconductor layer on the electron recombination barrier layer; And adsorbing a dye on the surface of the porous metal oxide semiconductor layer.

According to an aspect of the present invention, there is provided a dye-sensitized solar cell comprising: a semiconductor electrode including a first substrate and a semiconductor oxide electrode; A counter electrode facing the semiconductor electrode; And an electrolyte layer interposed between the semiconductor electrode and the counter electrode, wherein the semiconductor electrode includes a corrosion inhibiting layer formed on the first substrate and an electron recombination blocking layer formed on the corrosion preventing layer, A semiconductor oxide electrode is formed on the electron recombination barrier layer, and the first substrate is formed of a metal material.

The dye-sensitized solar cell according to the present invention can be flexibly replaced with a metal substrate by replacing the conventional FTO in a semiconductor electrode, and the conductivity is increased to provide excellent photoelectric conversion efficiency.

In addition, the barrier layer formed on the metal substrate coated with the anti-corrosion layer prevents the recombination of electrons generated between the metal substrate and the electrolyte, so that the photoelectric conversion efficiency is excellent.

According to the present invention, it is possible to fabricate a dye-sensitized solar cell which is easily flexible and has excellent photoelectric conversion efficiency through a process of forming an electron-recombination barrier layer using a solution containing a precursor of a transition metal oxide on a metal substrate coated with a corrosion- Do.

Furthermore, it is possible to manufacture a dye-sensitized solar cell having a low manufacturing cost by reducing the material cost by replacing the conventional FTO with a relatively inexpensive metal substrate.

1 is a cross-sectional view illustrating a dye-sensitized solar cell according to a preferred embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention. In the present specification, when a film is described as being "on" another film or substrate, it may be directly on top of the other film or substrate, and a third other film in between may be intervening. In the accompanying drawings, the thicknesses and sizes of the films and regions are exaggerated for clarity of the description. Accordingly, the present invention is not limited by the relative size or spacing shown in the accompanying drawings. Like numbers refer to like elements throughout the accompanying drawings.

FIG. 1 is a cross-sectional view illustrating a dye-sensitized solar cell according to a preferred embodiment of the present invention.

Referring to FIG. 1, a dye-sensitized solar cell 100 according to the present invention includes a semiconductor electrode 110 and a counter electrode 120 facing each other. An electrolyte layer 130 is interposed between the semiconductor electrode 110 and the counter electrode 120.

The semiconductor electrode 110 includes a first substrate 111 and an anti-corrosion layer 113, an electron recombination barrier layer 115, and a semiconductor oxide electrode 117, which are sequentially formed on one surface of the first substrate 111.

The first substrate 111 may be a metal substrate having a flexible characteristic. For this purpose, the metal substrate preferably has a thickness of 1 mm or less. When the thickness of the metal substrate exceeds 1 mm, it is difficult to secure flexible characteristics. However, when the thickness of the metal substrate is 0.01 mm or less, the cost of manufacturing the substrate may be greatly increased. Therefore, it is more preferable that the metal substrate has a thickness of 0.01 nm to 1 mm.

For example, the metal substrate may be formed of a material including at least one of stainless steel, iron (Fe), titanium (Ti), aluminum (Al), and nickel (Ni) The metal substrate is preferably formed of stainless steel excellent in corrosion resistance to an electrolyte.

Stainless steel has excellent corrosion resistance, price competitiveness, easy to purchase, and easy bending characteristics. In addition, as shown in Table 1 below, it has an advantage that it has higher conductivity than FTO-coated glass and maintains high conductivity even after heating to high temperature.

[Table 1]

However, since stainless steel has weak corrosion resistance against I (iodine) and I ^- (iodide anion), there is a limit to sufficiently inhibit corrosion caused by electrolytes, so that it is required to be supplemented.

The corrosion preventive layer 113 is formed to improve the corrosion resistance of the first substrate 111 by preventing corrosion of the electrolyte. The corrosion preventive layer 113 is formed of a material having strong resistance to I ^- ions and excellent conductivity, .

For example, the corrosion preventive layer 113 may be formed of a material containing at least one of titanium (Ti), chromium (Cr), zirconium (Zr), and silicon (Si) And may be formed of at least one material of an alloy, an oxide, a carbide, and a nitride including at least one of zirconium (Zr) and silicon (Si). The corrosion inhibiting layer 113 is preferably formed of titanium (Ti) having high conductivity and excellent corrosion resistance against electrolytes.

The anti-corrosion layer 113 may be formed to a thickness ranging from 10 nm to 1000 nm. When the thickness of the corrosion-inhibiting layer 113 is less than 10 nm, the corrosion resistance of the electrolyte can not be sufficiently obtained, and corrosion of the first substrate 111 may be caused. On the other hand, when the thickness of the corrosion prevention layer 113 is more than 1000 nm, the coating cost is high and adhesion to the first substrate 111 may be decreased.

The anti-corrosion layer 113 can be formed, for example, by applying a paste containing a titanium (Ti) material to the first substrate 111 and then drying the paste. Alternatively, the anti-corrosion layer 113 may be formed by coating by a conventional sputtering method.

The electron recombination barrier layer 115 prevents recombination of electrons generated between the first substrate 111 and the electrolyte layer 130. The surface of the first substrate 111 is exposed to the electrolyte layer 130 The first substrate 111 and the oxide semiconductor electrode 117 are formed. The electron recombination blocking layer 115 in the present invention is formed between the corrosion prevention layer 113 and the oxide semiconductor electrode 117.

The electron recombination barrier layer 115 may be formed of a metal oxide semiconductor layer such as titanium (Ti) oxide, zinc (Zn) oxide, chromium (Cr) oxide, tungsten (W) oxide, niobium (Nb) These may be used alone or in combination of two or more.

The electron recombination blocking layer 115 may be formed to a thickness of about 10 nm to 300 nm. If the thickness of the electron recombination blocking layer 115 is less than 10 nm, the effect of preventing the recombination of electrons may be insufficient. On the other hand, if the thickness of the electron recombination blocking layer 115 is more than 300 nm, the electrons generated as a function of resistance may not be transmitted smoothly.

The electron recombination barrier layer 115 may be formed by applying a barrier layer solution containing a transition metal oxide precursor on the corrosion prevention layer 113 and drying the coating. At this time, the barrier layer solution may be a solution containing a transition metal oxide precursor such as titanium (Ti) oxide, zinc (Zn) oxide, chromium (Cr) oxide, tungsten (W) oxide, niobium (Nb) oxide and the like.

For example, the electron recombination barrier layer 115 may be formed of TiO ₂ by applying a solution of titanium diisopropoxide bis (acetylacetonate) (0.1 to 0.3 M) and drying it . When the molar concentration of titanium diisopropoxide bis (acetylacetonato) is less than 0.1 M, the electron recombination is not prevented. On the other hand, when the molar concentration exceeds 0.2 M, the coating thickness becomes thick and hinders electron transfer.

A semiconductor oxide electrode 117 is formed on the electron recombination blocking layer 115. The semiconductor oxide electrode 117 A working electrode may include a porous metal oxide semiconductor layer 118 and a dye layer 119 that is adsorbed on the surface of the porous metal oxide semiconductor layer 118. [

The porous metal oxide semiconductor layer 118 may be formed of at least one oxide semiconductor particles of metal oxides including a transition metal oxide. For example, a transition metal oxide is titanium dioxide (TiO _2), dioxide, tin (SnO _2), zirconium dioxide (ZrO _2), silicon dioxide (SiO _2), magnesium oxide (MgO), phosphorus pentoxide and niobium (Nb ₂ O ₅ ), Zinc oxide (ZnO), or the like can be used. These may be used alone or in combination of two or more. The porous metal oxide semiconductor layer 118 is preferably formed of anatase-type titanium dioxide (TiO ₂ ) in order to improve the light efficiency. The material forming the porous metal oxide semiconductor layer 118 is not particularly limited to the above-described materials. The porous metal oxide semiconductor layer 118 may be formed of oxide semiconductor particles having a particle size of, for example, nano-sized particles having an average particle diameter of 5 nm to 30 nm.

The dye layer 119 may include at least one of dye molecules adsorbed on the surface of the porous metal oxide semiconductor layer 118 and capable of generating excited electrons by sunlight. For example, the dye layer 119 may be formed of a metal complex, in this case, a dye molecule such as a ruthenium complex such as Ruthenium 535-bisTBA (N719) or Ruthenium 620-1H3TBA (Black dye). Alternatively, the dye layer 119 may be comprised of at least one dye molecule, such as an organic dye, a quantum-dot, or a natural dye. The dye layer 119 is not particularly limited as long as it is dye molecules capable of generating excited electrons by sunlight.

For example, the semiconductor oxide electrode 117 may be formed by applying a paste in which porous metal oxide particles and a polymeric binder are dispersed in an organic solution to an electron recombination barrier layer 115 and then performing heat treatment to form a porous metal oxide semiconductor layer 118 Then, a paste containing dye molecules capable of generating excited electrons by sunlight is applied to the surface of a plurality of metal oxide particles constituting the porous metal oxide semiconductor layer 118 to form a porous metal oxide semiconductor And then forming a dye layer 117 on the surface of the layer 118 on which a dye is adsorbed.

The counter electrode 120 includes a second substrate 121 and a catalyst layer 123 formed on the second substrate 121. The catalyst layer 123 is disposed opposite to the semiconductor oxide electrode 117. The catalyst layer 123 is in contact with the electrolyte layer 130 so as to participate in the reduction process of the electrolyte. When the electrolyte layer 130 includes an iodine redox iodide electrolyte, the catalyst layer 123 may be formed of platinum (Pt) or carbon black. The catalyst layer 123 may be formed by applying a solution containing platinum (Pt) or carbon black on the second substrate 121, followed by heat treatment.

The second substrate 121 is a substrate for receiving light, and has transparency. Preferably, the second substrate 121 may have a flexible characteristic. For this, the second substrate 121 may be a glass substrate or a polymer substrate coated with a transparent electrode having excellent transparency.

The second substrate 121 may be formed of, for example, a transparent polymer film coated with a transparent electrode. For example, the transparent polymer film may be formed of at least one selected from the group consisting of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polyethersulphone (PES), and polyimide ; ≪ / RTI > PI). The transparent electrode is disposed on a surface in contact with the catalyst layer 123, and may be formed of, for example, indium tin oxide (ITO).

When the first substrate 111 and the second substrate 121 are flexible substrates, the dye-sensitized solar cell 100 may have a flexible property as a whole. That is, the dye-sensitized solar cell 100 can operate normally without any substantial loss of function or damage even under an external force capable of deforming the external shape of the product.

At least one electrolyte injection hole may be formed in at least one region of the second substrate 121, the second substrate 121 and the catalyst layer 123 to form an electrolyte layer 130 have. At this time, a fine drill or a laser is used to etch a part of the second substrate 121 or a part of the second substrate 121 and the catalyst layer 123 to penetrate the counter electrode 120 Thereby forming at least one or more electrolyte injection ports (not shown).

The first substrate 111 and the second substrate 121 are joined together along the edge of the sealing member 140 and sealed. One side of the sealing member 140 may be in contact with the upper surface of the electron recombination blocking layer 115 and the other side may be in contact with the upper surface of the second substrate 121. The sealing member 140 may be in a closed loop shape surrounding the semiconductor oxide electrode 117 and the catalyst layer 123. A space is defined between the first substrate 111 and the second substrate 121 by the sealing member 140.

The first substrate 111 and the second substrate 121 are bonded together by forming a closed loop sealing member 140 along the outer circumference of the semiconductor electrode 110 or the counter electrode 120, The first substrate 111 and the second substrate 121 are aligned so that the counter electrodes 110 and the counter electrodes 120 face each other with a predetermined space therebetween and then the first substrate 111 and the second substrate 121 are connected to each other through the sealing member 140. 2 substrate 121 are bonded together. As the sealing member 140, for example, Surlyn may be used.

The electrolyte layer 130 may be interposed in a space between the first substrate 111 and the second substrate 121 partitioned by the sealing member 140. The electrolyte layer 130 may be formed of an iodine based oxidation-reduction liquid electrolyte, for example, 1-vinyl-3-hexyl-immidazolium iodide, 0.1 M LiI, may be made of an electrolytic solution of ^-, I ₃ was dissolved in acetonitrile to I ₂ (iodine) in 40 mM in acetonitrile / ballet (acetonitril / valeronitril) mixed solution ^- / I. It is needless to say that the electrolyte layer 130 can use various electrolyte solutions within a range capable of supplying electrons to the dye layer 119 by oxidation-reduction reaction.

For example, the electrolyte layer 130 may be formed by injecting an iodine-based redox electrolyte into a predetermined space of the semiconductor electrode 110 and the counter electrode 120 bonded through the electrolyte injection port (not shown) formed in the counter electrode 120 can do.

Thereafter, the electrolyte injection hole is sealed to complete the dye-sensitized solar cell 100. Although not shown, the dye-sensitized solar cell 100 may further include an external circuit connected to the first substrate 111 and the second substrate 121, respectively.

An electron recombination blocking layer 115 is formed between the first substrate 111 and the semiconductor oxide electrode 117 to isolate the first substrate 111 from the semiconductor oxide electrode 117 in the semiconductor electrode 110 The electrolyte solution of the electrolyte layer 130 flowing into the region adjacent to the first substrate 111 through the pores of the porous metal oxide semiconductor layer 118 contacts the first substrate 111, 115).

The driving mechanism of the dye-sensitized solar cell 100 is as follows.

The solar light transmitted through the transparent second substrate 121 of the counter electrode 120 from the outside is absorbed by the dye of the dye layer 119 absorbed on the surface of the porous metal oxide semiconductor layer 118 of the semiconductor electrode 110 Absorbed. At this time, light can be absorbed also in the dye layer 119 absorbed on the upper surface of the electron recombination blocking layer 115. Each dye molecule of the dye-absorbing dye layer 119 is excited to inject electrons into the conduction band of the porous metal oxide semiconductor layer 118.

The electrons injected into the porous metal oxide semiconductor layer 118 are transferred to the electron recombination blocking layer 115, the corrosion prevention layer 113 and the first substrate 111 through the intergranular interface in the porous metal oxide semiconductor layer 118 And is moved to the counter electrode 120 after an electrical operation is performed through an external electric wire (not shown).

The electrons reaching the counter electrode 120 pass through the second substrate 121 and the catalyst layer 123 and the oxidation-reduction action of the iodine electrolyte in the electrolyte layer 130 (3I- > I ₃ ^- + 2e ^- Electrons are injected into the porous metal oxide semiconductor layer 118. [

Each of the dye molecules in the dye layer 119 oxidized as a result of the electron transition in the semiconductor electrode 110 is again reduced by the electrons provided by the redox action in the electrolyte layer 130 and oxidized iodide ions I ₃ ^- ) is reduced again by electrons reaching the counter electrode 120 to complete the operation of the dye-sensitized solar cell 100.

In this process, since the electron recombination blocking layer 115 is formed between the first substrate 111 and the semiconductor oxide electrode 117 in the semiconductor electrode 110, the voids of the porous metal oxide semiconductor layer 118 It is prevented by the electron recombination blocking layer 115 that the electrolyte solution of the electrolyte layer 130 flowing into the region adjacent to the first substrate 111 contacts the first substrate 111, The electron loss at the surface is blocked, so that the energy conversion efficiency can be improved.

As described above, the dye-sensitized solar cell 100 according to the present invention can be fabricated by forming a conventional barrier layer forming process using a transition metal oxide precursor-containing barrier layer solution on a Ti-coated metal substrate as a dye-sensitized solar cell having excellent photoelectric conversion efficiency This is possible. In addition, the conventional FTO can be replaced with a relatively inexpensive metal substrate, thereby making it possible to fabricate a dye-sensitized solar cell having a low manufacturing cost by reducing the material cost.

In addition, according to the present invention, the first substrate 111 is made of a metal material and the second substrate 121 is made of a polymer material, and a flexible dye-sensitized solar cell 100) can be manufactured.

Further, since the first substrate 111 is formed of a metal material having excellent corrosion resistance and conductivity, the photoelectric conversion efficiency of the dye-sensitized solar cell 100 can be improved by improving durability and conductivity of the first substrate 111.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

1. Dye-sensitized solar cell manufacturing

Example  One

Ti was coated on a stainless steel substrate having a thickness of 0.15 mm by a sputtering method to form a corrosion preventing layer having a thickness of 100 nm and a titanium diisopropoxide bis (0.15M) titanium diisopropoxide bis acetylacetonate) solution was applied and dried to obtain TiO ₂ A 20 nm thick electron recombination barrier layer was formed, and a dye-sensitized solar cell was fabricated by a conventional method except for the constitution.

Example  2

The same as Example 1 except that the thickness of the Ti layer of the corrosion preventing layer was 1000 nm.

Comparative Example  One

Except that the electron-recombining blocking layer was not formed.

Comparative Example  2

The same as Example 1 except that the thickness of Ti of the corrosion inhibition layer was 1000 nm and the electron recombination barrier layer was not formed.

2. Evaluation of electrical characteristics

(1) Evaluation of electrical characteristics depending on the presence or absence of the electronic recombination barrier layer

Efficiency, fill factor (FF), short-circuit current (Jsc) and open-circuit voltage (Voc) were measured using solar cell efficiency meter for Examples 1 and 2 and Comparative Examples 1 and 2, The results are shown in Table 2.

[Table 2] (O: present, X: none)

Referring to Table 2, the conversion efficiencies of Examples 1 and 2, in which the electron recombination blocking layer was formed, were remarkably superior to those of Comparative Examples 1 and 2, respectively, by about 1.5 to 2 times. When the electron recombination blocking layer was formed, the conversion efficiency of Example 2 in which the thickness of the corrosion preventing layer was thicker than that of Example 1 in which the thickness of the corrosion preventing layer was relatively small was superior.

It has been found through this that it is preferable to form an electron recombination barrier layer on the semiconductor electrode and to increase the thickness of the corrosion prevention layer in terms of efficiency of the dye-sensitized solar cell.

(2) Evaluation of conductivity according to corrosion prevention layer application

Table 3 below shows the conductivity measurement results of a conventional FTO-coated glass substrate (comparative example) and a stainless steel (SUS) substrate on which a corrosion inhibition layer is formed (examples). Ti is used as the corrosion inhibiting layer, and the thickness of the used Ti is 500 nm. The thickness of the FTO used is 500 nm. The other components were formed in the same manner as a conventional dye-sensitized solar cell, and the device was fabricated with a size of 2.0 × 3.5 cm 2.

[Table 3]

Referring to Table 3, It was confirmed that the resistance of the Ti-coated SUS substrate (Example) was significantly lower than that of the FTO-coated glass substrate (Comparative Example) having a resistance of 1.03 × 10 ⁰ Ω / cm 2 at 5.35 × 10 ^-3 Ω / cm 2. As a result, it was found that the use of a Ti-coated SUS substrate is preferable to the use of an FTO-coated glass substrate in terms of improving conductivity.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. These changes and modifications may be made without departing from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

100: dye-sensitized solar cell 110: semiconductor electrode
111: First substrate 113: Corrosion preventing layer
115: Electron recombination blocking layer 117: Semiconductor oxide electrode
118: porous metal oxide semiconductor layer 119: dye layer
120: counter electrode 121: second substrate
123: catalyst layer 130: electrolyte layer
140: sealing member

Claims (16)

Providing a metal substrate having a corrosion-resistant layer made of a metal on its surface;
Coating a solution containing a precursor of a transition metal oxide on a corrosion inhibiting layer of the metal substrate and drying the solution to form an electron recombination barrier layer of a transition metal oxide;
Forming a porous metal oxide semiconductor layer on the electron recombination barrier layer; And
And adsorbing a dye on the surface of the porous metal oxide semiconductor layer.
The method according to claim 1,
The step of forming the electron recombination barrier layer
Titanium diisopropoxide bis (acetylacetonate) solution of titanium diisopropoxide bis (acetylacetonate). The method for forming a semiconductor electrode of a dye-sensitized solar cell according to claim 1,
The method according to claim 1,
The metal substrate
Wherein the first electrode is formed of a material including at least one of stainless steel, iron (Fe), titanium (Ti), aluminum (Al), and nickel (Ni).
The method according to claim 1,
The corrosion-
Wherein the first electrode is formed of at least one material selected from the group consisting of titanium (Ti), chromium (Cr), zirconium (Zr), and silicon (Si).
delete The method according to claim 1,
The electron recombination barrier layer
Wherein the first electrode is formed of at least one of titanium (Ti) oxide, zinc (Zn) oxide, chromium (Cr) oxide, tungsten (W) oxide and niobium (Nb) oxide.
A semiconductor electrode including a first substrate and a semiconductor oxide electrode;
A counter electrode facing the semiconductor electrode; And
And an electrolyte layer interposed between the semiconductor electrode and the counter electrode,
Wherein the semiconductor electrode comprises a corrosion inhibiting layer of a metal material formed on the first substrate and an electron recombination barrier layer of a transition metal oxide material formed on the corrosion inhibiting layer so that the semiconductor oxide electrode is formed on the electron recombination barrier layer Formed,
Wherein the first substrate is made of a metal material.
8. The method of claim 7,
The first substrate
Wherein the first electrode is formed of a material containing at least one of stainless steel, iron (Fe), titanium (Ti), aluminum (Al), and nickel (Ni).
8. The method of claim 7,
The first substrate
Wherein the dye-sensitized solar cell has a thickness of 1 mm or less.
8. The method of claim 7,
The corrosion-
Wherein the first electrode is formed of at least one material selected from the group consisting of titanium (Ti), chromium (Cr), zirconium (Zr), and silicon (Si).
delete 8. The method of claim 7,
The electron recombination barrier layer
Wherein the first electrode is formed of at least one material selected from the group consisting of titanium oxide, zinc oxide, chromium oxide, tungsten oxide and niobium oxide.
8. The method of claim 7,
The electron recombination barrier layer
Wherein the dye-sensitized solar cell is formed to have a thickness of 10 nm to 300 nm.
8. The method of claim 7,
The semiconductor oxide electrode
A porous metal oxide semiconductor layer, and a dye layer adsorbed on a surface of the porous metal oxide semiconductor layer.
8. The method of claim 7,
The counter electrode
A second substrate, and a catalyst layer formed on the second substrate.
16. The method of claim 15,
The second substrate
Wherein the dye-sensitized solar cell is a glass substrate or a polymer substrate coated with a transparent electrode.

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