KR101432832B1 - Edge ring assembly with dielectric spacer ring - Google Patents

Edge ring assembly with dielectric spacer ring Download PDF

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Publication number
KR101432832B1
KR101432832B1 KR20087003093A KR20087003093A KR101432832B1 KR 101432832 B1 KR101432832 B1 KR 101432832B1 KR 20087003093 A KR20087003093 A KR 20087003093A KR 20087003093 A KR20087003093 A KR 20087003093A KR 101432832 B1 KR101432832 B1 KR 101432832B1
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South Korea
Prior art keywords
ring
dielectric spacer
substrate
spacer ring
edge
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KR20087003093A
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Korean (ko)
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KR20080032163A (en
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제레미 창
안드레아스 피셔
바바크 카드코다얀
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램 리써치 코포레이션
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Priority to US11/198,296 priority Critical
Priority to US11/198,296 priority patent/US20070032081A1/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Priority to PCT/US2006/028844 priority patent/WO2007019049A2/en
Publication of KR20080032163A publication Critical patent/KR20080032163A/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/467Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49718Repairing
    • Y10T29/49721Repairing with disassembling
    • Y10T29/4973Replacing of defective part

Abstract

The edge ring assembly surrounds the substrate support surface in a plasma etch chamber. The edge ring assembly includes an edge ring and a dielectric spacer ring. A dielectric spacer ring surrounding the substrate support surface and surrounded by the edge ring in a radial direction is configured to insulate the edge ring from the base plate. The integration of the edge ring assembly around the substrate support surface can reduce the build up of polymer along the edge of the substrate and also below it, and can increase the plasma etching uniformity of the substrate.
Figure R1020087003093
Edge ring, plasma, etch chamber, substrate, dielectric spacer ring

Description

[0001] EDGE RING ASSEMBLY WITH DIELECTRIC SPACER RING [0002]

Background technology

In the following description, reference is made to certain constructions and methods, but such references are not necessarily to be construed as an admission that these constructions and methods are qualified as prior art in accordance with applicable law provisions. Applicants have the right to explain that none of the referenced objects constitute prior art.

In the field of semiconductor processing, a plasma processing chamber is widely used to etch one or more layers formed on a substrate. During etching, the substrate is supported on a substrate support surface within the chamber. The substrate support is positioned around the substrate support (i.e., around the substrate), to confine the plasma to a volume above the substrate and / or to protect the substrate support (which typically includes the clamping mechanism) from corrosion by the plasma For example. An edge ring, often referred to as a focus ring, may be a sacrificial (i.e., consumable) component. Conductive and non-conductive edge rings are described in co-owned US Patents 5,805,408, 5,998,932, 6,013,984, 6,039,836 and 6,383,931.

Lithographic techniques can be used to form a geometric pattern on the surface of a semiconductor substrate. During the lithographic process, a pattern, such as an integrated circuit pattern, can be projected from a mask or a reticle and transferred to a photosensitive (e.g., photoresist) coating formed on the substrate surface. Plasma etching can also be used to transfer the pattern formed in the photoresist layer into one or more layers formed on the substrate underlying the photoresist layer.

During plasma etching, the plasma is formed on the substrate surface by adding a large amount of energy to the gas (or gas mixture) at low pressure. The plasma may contain ions, free radicals and neutral species with high kinetic energy. By adjusting the substrate potential, charged species in the plasma can be induced to impinge on the substrate surface to remove material (e.g., atoms) from the substrate surface.

Plasma etching can be made more effective by using a gas that chemically reacts with the material to be etched. The so-called "reactive ion etching" combines the powerful etching effect of the plasma with the chemical etching effect of the reactive gas. However, during plasma etching, in addition to etching one or more layers of semiconductor material, the photoresist layer may be removed by plasma.

Residues from the photoresist and / or polymer, which may be formed as an etch byproduct, may be undesirably deposited again on the bottom or side edge of the substrate (e.g., the bevel edge). Bevel polymers, which may volatilize during subsequent processing, may adversely affect process yield. To maximize yield, it may be desirable for the polymer buildup to decrease at the bevel edge and below the substrate.

summary

According to a first embodiment, an edge ring assembly configured to surround a substrate support surface in a plasma etch chamber is placed below a periphery of a substrate located on a substrate support surface, and a gap between the lower peripheral surface of the substrate and the upper surface of the edge ring and a dielectric spacer ring having a dimension to provide a clearance between the lower surface of the substrate and the upper surface of the dielectric spacer ring between the substrate support surface and the edge ring.

When the edge ring assembly is mounted in the plasma etch chamber, the annular gap between the edge ring and the dielectric spacer ring and / or the annular gap between the dielectric spacer ring and the substrate support surface is preferably less than 0.25 mm and the upper surface of the dielectric spacer ring The innermost upper surface of the edge ring is preferably substantially coplanar.

The edge ring assembly is configured such that the distance between the surface of the substrate support surface and the surface of the uppermost surface of the dielectric spacer ring is less than about 0.25 mm and the distance between the surface of the substrate support surface and the surface of the upper surface of the radially inner portion of the edge ring is about & Preferably less than 0.25 mm. Thus, when the substrate is located on the substrate support surface, the gap between the lower surface of the substrate and the upper surface of the dielectric spacer ring is preferably less than about 0.25 mm, and the lower surface of the substrate and the upper surface of the radially inner portion of the edge ring Is preferably less than about 0.25 mm. In one embodiment, the radially outer portion of the edge ring is thicker than the dielectric spacer ring.

According to another embodiment, the plasma etch chamber comprises an edge ring assembly configured to surround a substrate support surface in a plasma etch chamber. The substrate support preferably includes an electrostatic chuck on the upper surface of the base plate forming the lower electrode. The edge ring assembly may rest on a coupling ring that rests on the periphery of the base plate. The substrate may be mounted on the substrate support surface such that the outer edge of the substrate extends over the radially inner portion of the dielectric spacer ring and the edge ring.

The preferred dielectric spacer ring has a width (e.g., about 0.5 to 2.5 mm) effective to electrically isolate the edge ring from the base plate and a height effective to minimize polymer deposition in the gap between the dielectric spacer ring and the substrate To 3 mm). At least one gas passageway may extend through the coupling ring or base plate, wherein the gas passageway is configured to supply a heat transfer gas to an adjacent surface of the edge ring and / or the dielectric spacer ring.

A preferred plasma etch chamber comprises a parallel plate reactor having an upper showerhead shaped electrode facing a substrate support surface. The base plate may comprise an RF driving electrode and / or the substrate support surface may comprise an electrostatic chuck on the upper surface of the base plate.

The edge ring assembly includes (i) RF coupling between the edge ring and the base plate, (ii) arc generation between the edge ring and the base plate, and (iii) polymer deposition on the edge and / It is desirable to reduce at least one of them.

A method of etching a layer on a semiconductor substrate in a plasma etch chamber having an edge ring assembly includes the steps of supporting the substrate on a substrate support surface located within the chamber, supplying an etch gas to the chamber, Activating into a plasma state adjacent to the semiconductor substrate, and etching the at least one layer on the semiconductor substrate with a plasma. Because of the plasma erosion of the dielectric spacer rings, after etching a given number of semiconductor substrates, the dielectric spacer rings can be removed from the chamber and replaced with other dielectric spacer rings.

According to yet another embodiment, the dielectric spacer ring has a dimension to provide a gap between the lower surface of the substrate located on the substrate support surface in the plasma etch chamber and the upper surface of the dielectric spacer ring, and the dielectric spacer ring also underlies the substrate And has a dimension such that it is surrounded by an edge ring having a dimension to provide a gap between the lower surface of the substrate and the upper surface of the edge ring.

When the dielectric spacer ring and the edge ring are mounted in the plasma etch chamber, the upper surface of the dielectric spacer ring and the innermost upper surface of the edge ring are preferably substantially coplanar.

The dielectric spacer ring may be bonded to the upper surface of the ring for coupling or to the upper surface of the base plate, and either or both of the dielectric spacer ring and the coupling ring may be made of quartz. In another embodiment, the dielectric spacer ring may comprise an axially upwardly extending portion formed on the radially inner surface of the coupling ring.

Brief Description of Drawings

1 is an example of a parallel plate plasma etching reactor.

Figure 2 illustrates a parallel plate plasma etching reactor including an edge ring assembly mounted on a coupling ring according to one embodiment.

3 illustrates a parallel plate plasma etching reactor including an edge ring assembly according to another embodiment.

Figure 4 illustrates a parallel plate plasma etch reactor including an edge ring assembly mounted on a base plate according to yet another embodiment.

desirable Example  details

A plasma processing apparatus comprising: a plasma etching apparatus for plasma etching a plasma of a semiconductor substrate supported on a lower electrode by plasma generated by supplying RF energy to a showerhead and / or a lower electrode, The plasma uniformity may be influenced by RF coupling between the lower electrode and the plasma.

To improve plasma uniformity, the edge ring assembly surrounds the substrate support surface in the plasma etch reactor. The edge ring assembly includes an edge ring and a dielectric spacer ring in which the dielectric spacer ring surrounds the substrate support surface and the edge ring is arranged to surround the dielectric spacer ring. Incorporating the edge ring assembly around the substrate support surface can reduce the build up of polymer along the edge of the substrate and also below and / or increase the plasma etch uniformity of the substrate.

According to a preferred embodiment, the dielectric spacer ring is a discrete portion on one surface of the member surrounding the substrate support surface. The member may be a ring for the coupling situated below the dielectric spacer ring and the edge ring, or a part of the base plate. According to another embodiment, the dielectric spacer ring may be bonded to the member through, for example, a thermally conductive elastomeric bond. According to another preferred embodiment, the dielectric spacer ring and the ring for coupling may comprise a unitary part.

By providing a dielectric spacer ring, the RF coupling can be reduced between the edge ring and the base plate. Also, inserting a dielectric spacer ring between the substrate support surface and the edge ring, as discussed in more detail below, can reduce the arcing tendency between the conductive edge ring and the substrate support / base plate and / Polymer deposition on the underside and / or edge of the substrate supported on the support surface can be reduced. The plasma etch chamber includes an edge ring assembly, and the method of etching the semiconductor substrate includes etching the semiconductor substrate in a plasma etch chamber including an edge ring assembly.

The edge ring assembly is configured to surround the substrate support surface in a plasma etch reactor. During plasma etching of a substrate that is supported or clamped on a substrate support surface, the edge ring assembly can concentrate the plasma on the substrate and / or concentrate the RF power through the substrate. It is believed that the edge ring assembly can improve plasma etch performance and reduce wear of plasma reactor components. In addition, the dielectric spacer rings and edge rings can be disposable parts that can protect the substrate support and / or the base plate from plasma erosion.

Typically, a plasma chamber is used to etch a material layer on a substrate by supplying an etch gas containing one or more gases to the chamber and applying energy to the etch gas to activate the gas in a plasma state. A number of plasma chamber designs are known that can generate and maintain medium density or high density plasma using radio frequency (RF) energy, microwave energy, and / or magnetic fields.

The edge ring assembly may be included in an inductively coupled helicon, electron cyclotron resonance (ECR), parallel plate, or other type of plasma chamber. For example, high density plasma can be generated in the TM TCP (transformer coupled plasma) reactor, or ECR reactors. A TCP reactor in which RF energy is inductively coupled into a reactor is available from Lam Research Corporation, located in Fremont, California. One example of a high-flow plasma reactor capable of providing a high-density plasma is disclosed in co-owned US Pat. No. 5,948,704, the disclosure of which is incorporated herein by reference. Parallel plate reactors, ECR reactors and TCP TM reactors are disclosed in co-owned US Pat. Nos. 4,340,462, 4,948,458, 5,200,232 and 5,820,723, the disclosures of which are incorporated herein by reference.

As an example, the plasma may occur in a parallel plate etching reactor, for example, a dual frequency plasma etching reactor as described in co-owned US Pat. No. 6,090,304, the disclosure of which is incorporated herein by reference. A preferred parallel plate plasma etch chamber is a dual frequency capacitively coupled plasma reactor including an upper showerhead type electrode and a lower electrode and the lower electrode (e.g., base plate) has a substrate support, such as an electrostatic chuck, . For purposes of illustration, embodiments of edge ring assemblies are described herein with reference to a parallel plate type plasma etch chamber.

Figure 1 shows a parallel plate plasma etch reactor. The plasma etch reactor 100 includes a chamber 110, an inlet load lock 112 and an optional exit load lock 114, the details of which are described in co-owned US Pat. No. 6,824,627, Are incorporated herein by reference.

The loadlocks 112 and 114 (if provided) include a transfer device for transferring a wafer-like substrate from the wafer supply 162 through the chamber 110 to the wafer receiving portion 164. The load lock pump 176 may provide the desired vacuum pressure to the load locks 112 and 114.

A vacuum pump 172, such as a turbo pump, is configured to maintain the desired pressure within the chamber. During plasma etching, the chamber pressure is preferably controlled and maintained at a level sufficient to sustain the plasma. If the chamber pressure is too high, it can contribute to the etching stop, but if the chamber pressure is too low, the plasma may be destroyed. In a medium density plasma reactor, such as a parallel plate reactor, it is desirable to maintain the chamber pressure at a pressure below about 200 mTorr (e.g., less than 100 mTorr or less than 50 mTorr).

The vacuum pump can be connected to the outlet on the wall of the reactor and can be controlled by the valve 173 to control the pressure in the chamber. Preferably, while the etching gas is flowing into the chamber, the vacuum pump can maintain the pressure in the chamber below 200 mTorr.

The chamber 110 includes an upper electrode assembly 120 including an upper electrode 125 (e.g., a showerhead electrode), and a base plate 160 (i.e., lower electrode) and a substrate support surface 150 (Not shown). The upper electrode assembly 120 is mounted on the upper housing 130. The upper housing 130 can move vertically by a mechanism 132 that regulates the gap between the upper electrode 125 and the substrate support surface 150.

The etch gas source 170 may be connected to the housing 130 to deliver an etch gas including one or more gases to the upper electrode assembly 120. In a preferred etching reactor, the top electrode assembly includes a gas distribution system that can be used to transfer reactant and / or carrier gas to regions adjacent the substrate surface. A gas distribution system that may include one or more gas rings, injectors, and / or showerheads (e.g., showerhead-type electrodes) is disclosed in commonly owned U.S. Patent Nos. 6,333,272, 6,230,651, 6,013,155, and 5,824,605 , The disclosure of which is incorporated herein by reference.

The upper electrode 125 preferably includes a showerhead-type electrode, and the showerhead-like electrode includes an opening (not shown) for distributing the etching gas. The showerhead-like electrode may comprise one or more vertically spaced baffle plates capable of promoting the desired distribution of the etching gas. The upper and lower electrodes may be formed of any suitable material, such as graphite, silicon, silicon carbide, aluminum (e.g., anodized aluminum), or combinations thereof. A heat transfer liquid source 174 may be connected to the upper electrode assembly 120 and another heat transfer liquid source may be connected to the base plate 160.

U.S. Patent No. 6,019,060, the disclosure of which is incorporated herein by reference, discloses a plasma confinement ring assembly. Because of the plasma confinement on the etched substrate, the pressure at the substrate surface may be higher than the vacuum pressure set for the reactor chamber. To maintain a low chamber pressure, an inert carrier gas is preferably added to the chamber at a flow rate of about 50 to 500 sccm (standard cubic centimeters per minute). Typically, the individual flow rates of the individual reaction components of the etching gas mixture are in the range of about 1 to 200 sccm for a 200 mm substrate, and higher for larger substrates.

Plasma density refers to the density of positive ions in the plasma etched area. Generally, the plasma density is a function of the power provided to the electrodes. Higher power tends to increase the density of the plasma and, depending on other parameters, a higher plasma density may also increase the etch rate of the layer previously formed on the substrate by generating more ion flux on the substrate surface. Medium density plasma is about 10 10 to 10 11 ions / cm can be characterized in that it comprises an ion density of 3, but the barrel phase, high-density plasma may have from about 10 11 to 10 12 ions / cm ion density of 3 .

According to some embodiments, the upper or lower electrode may be a powered electrode, while the other of the lower or upper electrode is an electrically grounded (return path) electrode. According to another embodiment, both the upper electrode and the lower electrode can be powered, the two electrodes being powered in different phases with respect to voltage. In a parallel plate reactor, a power source 178 may provide RF power to the upper electrode 125 and / or the base plate 160 (i.e., the lower electrode).

The reactor may be a single frequency, dual frequency or multi-frequency plasma reactor. In a dual frequency plasma reactor, for example, the plasma may occur by supplying RF power at two different frequencies to the top and / or bottom electrodes through the matching network. As an example, a low frequency such as 2 MHz may be supplied to the bottom electrode, and a high frequency such as 27 MHz may be supplied to the top electrode. Alternatively, the top electrode can be electrically grounded and RF power at two or more different frequencies (e.g., about 10 to 60 MHz, and also less than about 10 MHz) can be supplied to the bottom electrode.

Continuous or discontinuous RF biasing may be applied to the substrate during etching. The RF bias can determine the energy that the positive ion flux impinges on the substrate surface. The range of the RF power is preferably about 50 to 3000 watts, and the range of the RF bias power applied to the lower electrode may be 0 to 3000 watts for a 200 mm substrate. Preferably, the lower electrode has a constant surface area such that the RF bias power can supply a power of about 0 to 8 watts / cm 2 , preferably at least 2 watts / cm 2 to the substrate.

By supplying RF power to the lower electrode, a DC sheath voltage can be formed with respect to the substrate surface. The sheath voltage is a function of the bias power and is essentially independent of plasma generation. The high bias power produces a large sheath voltage and can cause a strong ion bombardment of the substrate surface during etching.

The gap width between the electrodes in the parallel plate reactor may affect the etching rate of the dielectric layer. The choice of the desired gap width depends in part on the chamber pressure used during the etching. Typically, at high chamber pressures (e.g., from about 75 mTorr to 1 Torr), the preferred gap width is about 1 to 1.5 cm. At low chamber pressures (e.g., below about 75 mTorr), a wide gap width, such as a gap width of about 1.3 to 2.5 cm, may be used. Further, the gap width can be selected as a function of the frequency applied to the electrode. Generally, in the etching of the dielectric layer, a narrow gap width is more preferable in the case of a high frequency, and a wide gap width is more preferable in a case of a low frequency. In a medium density parallel plate reactor, the gap between the upper and lower electrodes supporting the substrate may be about 1-2.5 cm.

FIG. 2 shows details of the lower electrode assembly 240 including the edge ring assembly 270 according to the first embodiment. The lower electrode assembly 240 includes a base plate 260 having a flange 262 and a substrate support 250 such as an electrostatic chuck (ESC) including a substrate support surface 254 formed on the upper surface of the base plate ). The base plate (lower electrode) may comprise a conductive material, and the ESC may comprise a ceramic material with electrodes 252 embedded therein. The ESC can be bonded to the upper surface of the base plate. The bottom electrode may be powered by an RF source and associated circuitry that provide RF matching. The lower electrode is preferably temperature-controlled, and may optionally include a heating device. The substrate support surface 254 is configured to support a single semiconductor substrate, such as a 200 mm or 300 mm wafer.

2, the edge ring 280 and dielectric spacer ring 285 are disposed on the flange 262 of the base plate 260 such that the coupling ring 290, such as the ring for quartz coupling, And is supported on the upper surface. The coupling ring 290 may be supported on the base plate, regardless of whether it has a mechanical or adhesive seam, such as a plurality of bolts 224. The substrate 210 may be supported / clamped on the substrate support surface to overlie at least the radially inner portion 281 of the dielectric spacer ring 285 and the edge ring 280.

The substrate support 250 preferably includes a passageway for supplying helium between the substrate 210 and the support surface 254 so that the substrate 210 is exposed during its plasma etching by an amount sufficient to prevent the photoresist on the substrate from burning, . Preferably, the substrate is maintained at a temperature less than about 140 캜 during plasma etching. In a medium density plasma reactor, it is preferred that the substrate support be cooled to a temperature of about -20 to 80 DEG C to hold the substrate at the desired temperature.

Helium may be supplied to the space between the substrate and the substrate support surface at a pressure of about 1 to 30 Torr to maintain the substrate at the desired temperature. The substrate temperature may also be controlled by adjusting the level of RF bias, ESC temperature, and other parameters, as described herein. A method of controlling the substrate temperature by introducing pressurized gas into the space between the substrate and the substrate support surface is disclosed in co-owned US Pat. No. 6,140,612, the disclosure of which is incorporated herein by reference.

The coupling ring 290 may optionally include an edge ring chuck (not shown) located on its upper surface. If provided, the edge ring chuck can be a monopolar or bipolar chuck, and DC power can be supplied by the DC power supply using a suitable electrical connection. The edge ring chuck can be used to secure an edge ring 280, such as a silicon edge ring, to the ring for coupling. Details of the electrostatic clamping edge ring are disclosed in co-owned U. S. Patent No. 6,475, 336, the disclosure of which is incorporated herein by reference.

The edge ring 280 may be comprised of a semiconductor or electrically conductive material, such as silicon (e.g., monocrystalline silicon or polycrystalline silicon) or silicon carbide (e.g., chemical vapor deposited silicon carbide). Since the edge ring will be directly exposed to the plasma, the preferred edge ring is made of a high purity material. Additional materials for the edge ring include aluminum oxide, aluminum nitride, silicon nitride, quartz, and the like. The edge ring may be in an electrically floating state or may be electrically connected to a DC ground.

To reduce exposure of the substrate support and / or base plate to ions / reactive species in the plasma, the substrate support preferably has a size such that the substrate extends over the substrate support surface. Continuing with FIG. 2, a substrate that can span about 1 to 2 mm above the substrate support surface spans over both the dielectric spacer ring 285 and the radially inner portion 281 of the edge ring 280 (see, for example, Dielectric A portion of the spacer ring and the edge ring extend below the periphery of the substrate). Thus, it is desirable for the dielectric spacer ring to have a radial width less than the amount that the substrate overlies the substrate support surface.

In a preferred edge ring assembly, the radially inner edge of the edge ring 280 is in contact with or near the radially outer edge of the dielectric spacer ring 285, and the radially inner edge of the dielectric spacer ring 285 is located on the substrate support and / Is in contact with or near the outer edge of the base plate (260). By "close" it is meant that the gap between the edge ring and the dielectric spacer ring (eg, annular gap) or gap between the dielectric spacer ring and the substrate support surface is less than about 0.25 mm, more preferably less than about 0.12 mm Means fewer. Thus, the dielectric spacer ring and the edge ring (if provided, an edge ring chuck, or the like) can be removed from the upper surface of the ring 290 for coupling so that the upper surface of the ring for coupling can be less exposed to reactive species and / Actually cover. According to one embodiment, the dielectric spacer ring may be bonded to the coupling ring (i.e., the upper surface of the coupling ring may be bonded to the lower surface of the dielectric spacer ring).

A heat transfer gas such as helium may be used to enhance the heat transfer between the edge ring assembly and the base plate. The heat transfer gas can be supplied to the interface between the edge ring assembly and the ring 290 through the gas passage 230 from the gas source 230 and / or the interface between the ring 290 and the base plate 260 for coupling. have. The gas passage 232 extends through the coupling ring 290 and the base plate 260 at one or more locations spaced about the base plate 260 and extends through the passage in the bolt 224, .

According to embodiments where there is a gap between the substrate support and the dielectric spacer ring and / or between the dielectric spacer ring and the edge ring, the helium flow in the gap (s) can reduce the ingress of etching gases and / or volatile byproducts, It is possible to reduce the accumulation of the polymer.

Continuing with reference to Figure 2, it is preferred that the inner surface of the edge ring spaced outwardly of the substrate has a shape that allows it to form an angle with a surface substantially perpendicular to the substrate surface. Thus, the preferred edge ring includes a radially inner portion 281 and a radially outer portion, wherein the thickness of the radially inner portion is thinner than the thickness of the radially outer portion and the thickness of the radially outer portion is thicker than the thickness of the dielectric spacer ring . The upper surface of the dielectric spacer ring and the uppermost surface of the radially innermost portion of the edge ring are preferably located as close as possible to the underside of the substrate. According to a preferred embodiment, the upper surface of the dielectric spacer ring and the radially innermost upper surface of the edge ring are substantially coplanar and are configured to be below that portion of the substrate over the substrate support surface. Alternatively, the upper surface of the dielectric spacer ring may be higher or lower than the upper radial inner surface of the edge ring.

The gap between the dielectric spacer ring and the substrate and between the radially inner portion of the edge ring and the substrate takes into account the thermal expansion of the dielectric spacer ring and the edge ring during plasma etching. Preferably, a gap G exists between the upper surface of the dielectric spacer ring and the lower surface of the substrate, and a gap G 'exists between the upper inner surface of the edge ring and the lower surface of the substrate. It is desirable to provide sufficient clearance between the dielectric spacer ring and the substrate and between the edge ring and the substrate such that the thermal expansion of the dielectric spacer ring and / or the edge ring during etching does not separate the substrate from the substrate support surface.

The preferred dielectric spacer ring has a width that is effective to electrically isolate the edge ring from the base plate and a height effective to minimize the gap G between the dielectric spacer ring and the substrate during plasma etching of the substrate. By minimizing the gap G, polymer deposition on the underside of the substrate or on the beveled edge can be minimized.

The dielectric spacer ring may have a square cross section or a rectangular cross section. Exemplary dielectric spacer rings have a width of about 0.5 mm to 2.5 mm, more preferably about 0.8 mm to 1.2 mm, with a height of about 1 mm to 3 mm, more preferably about 2.4 mm To 2.8 mm. According to a preferred embodiment, the dielectric spacer ring is configured to fit directly under the protruding portion of the substrate mounted on the substrate support surface, and the gap G between the dielectric spacer ring and the substrate is less than about 0.25 mm. According to another preferred embodiment, the distance between the surface of the substrate support surface and the surface of the upper surface of the dielectric spacer ring is preferably less than about 0.25 mm, and the distance between the surface of the substrate support surface and the upper surface of the radially inner portion of the edge ring The distance is preferably less than about 0.25 mm.

Suitable materials for use as dielectric spacer rings include ceramic materials such as silicon oxide (e.g., quartz) or aluminum oxide, and polymeric materials such as Dupont ® Vespel ® , Dupont ® Kapton ®, and the like. A preferred dielectric spacer ring is made of quartz.

According to another embodiment, the other geometric structure for the edge ring assembly includes a modified coupling ring. Referring to FIG. 3, the lower electrode assembly 340 includes a modified coupling ring 390 'including a portion 385 extending axially upwardly on its inner radial surface. 3, the ring for coupling and the dielectric spacer ring are configured as a single, integral part that is mounted on the base plate 360, compared to the embodiment of FIG. 2 that includes separate coupling rings and dielectric spacer rings. do. Thus, the axially upwardly extending portion 385 of the modified coupling ring is configured to replace the individual dielectric spacer ring. The modified coupling ring 390 'may be supported on the base plate 360 whether or not it has mechanical or adhesive fasteners.

According to the embodiment of FIG. 3, an edge ring 380, which may be substantially identical to the edge ring described in connection with the embodiment of FIG. 2, is on the outer flange portion of the modified coupling ring 390 '. The modified coupling ring 390'may be made of quartz may be on the flange portion 362 of the base plate 360 or may be on the flange portion 362 (e.g., via the bolt 324) Lt; / RTI >

Heat transfer gas, such as helium, can be used to enhance the heat transfer between the modified coupling ring assembly and the base plate. The heat transfer gas is transferred from the gas source 330 to the interface between the modified coupling ring 390 'and the base plate 360 via the gas passageway 332 and / or the modified coupling ring 390' Lt; RTI ID = 0.0 > 380 < / RTI > The gas passageway 332 extends through the modified coupling ring 390 'and base plate 360 at one or more locations spaced about the base plate 360 and extends through the passage in the bolt 324, for example, Lt; / RTI >

It is preferred that the upper inner surface of the edge ring 380 spaced out of the substrate has a shape that allows it to form an angle with a surface that is substantially perpendicular to the substrate surface. The substrate support 350 may include an ESC embedded with a substrate support surface 354 and an electrode 352. The ESC may be bonded to the upper surface of the base plate 360.

The radially inner surface 382 of the edge ring 380 contacts or is located proximate to the radially outer surface 386 of the axially upwardly extending portion 385 and extends axially upwardly The radially inner surface 387 of the base plate 385 is in contact with or is located close to the radially outer surface of the substrate support 350 and /

Both the radially inner portion 381 of the edge ring 380 and the axially upwardly extending portion 385 above the modified coupling ring 390 'extend below the protruding portion of the substrate 310. According to a preferred embodiment, the upper surface of the axially upwardly extending portion 385 and the innermost upper surface of the edge ring are substantially coplanar and are configured to be below that portion of the substrate over the substrate support surface. Alternatively, the upper surface of the axially upwardly extending portion 385 of the modified coupling ring 390 'may be higher or lower than the upper inner surface of the edge ring. Preferably there is a gap G between the upper surface of the axially upwardly extending portion 385 and the lower surface of the substrate and the gap G 'between the upper inner surface of the edge ring 380 and the lower surface of the substrate, ).

According to a preferred embodiment, the axially upwardly extending portion 385 of the modified coupling ring 390 'is configured to fit directly below the projecting portion of the substrate mounted on the substrate support surface, Is less than about 0.25 mm.

Exemplary operating conditions for a plasma etch reactor to etch a dielectric material such as SiO 2 are as follows: a wafer diameter of about 200 mm or 300 mm; A dielectric material thickness on the substrate of at least about 200 nm; A dielectric material density having a theoretical density of at least about 90%; A bottom electrode temperature of from about 0 DEG C to about 90 DEG C; A chamber pressure of from about 0 Torr to 2 Torr, preferably up to about 200 mTorr; A substrate temperature of from about 20 캜 to 200 캜, preferably from 20 캜 to 50 캜; An etching gas flow rate of about 10 sccm to about 1,000 sccm; The total dual frequency power delivered between the top electrode and the bottom electrode at least about 2,500 watts; And an etching time of the dielectric material of at least about 1 minute.

The various etch gases may be used to etch different dielectric materials. The etching gas may comprise one or more halogen containing gas, one or more oxygen containing gas and / or one or more nitrogen containing gas. Conventional etching gas mixtures include, for example, chlorine-containing gases such as Cl 2 , HCl and BCl 3 ; A fluorine-containing gas such as CF 4 , C 2 F 6 , C 3 F 8 , C 4 F 8 , CHF 3 , CH 2 F 2 , CH 3 F, NF 3 and SF 6 ; Oxygen-containing gases such as O 2 , CO, H 2 O and SO 2 ; Nitrogen-containing gases such as N 2 and NH 3 , and inert gases such as He, Ne, Kr, Xe, and Ar, and other gases.

The etching gas mixture preferably comprises an inert carrier gas. During plasma etching of dielectric materials such as oxides, nitrides, or combinations thereof, the carrier gas can sputter the dielectric material, which can be advantageous in increasing the overall etch rate. Heavy noble gases have low ionization potentials and form ions that can improve the sputtering rate at a given RF power. In addition, the low ionization potential of the rare gas can help to produce a uniform plasma on the surface of the substrate. Exemplary carrier gases include helium, neon, argon, krypton, and / or xenon. Argon is the preferred inert carrier gas. These and other gases may be used together in an etching gas mixture.

An example of a dielectric etch process performed in a 2300 Exelan ® or Exelan ® HPT dual frequency medium density parallel plate plasma chamber available from Lam Research Corporation, Fremont, Calif., Is described below, in which the etch gas chemistry The property is a mixture of octafluorocyclobutane (C 4 F 8 ), difluoromethane (CH 2 F 2 ), nitrogen (N 2 ) and argon (Ar). Additional etching steps that may include additional etch gases may be used. In the case of etching the silicon oxide layer on a 300 mm silicon wafer, the individual components of the etching gas may be in the range of 2 to 20 sccm hexafluoro l, 3-butadiene (C 4 F 6); 2 to 20 sccm C 4 F 8 ; 1 to 10 sccm CH 2 F 2 ; 50 to 200 sccm tetrafluoromethane (CF 4 ); 50 to 200 sccm N 2 ; 200 to 800 sccm Ar; 100 to 400 sccm carbon monoxide (CO); And a flow rate of 100 to 400 sccm oxygen (O 2 ). During the etching, the chamber pressure can be set to 1 to 500 mTorr, and preferably to 5 to 200 mTorr. To achieve the desired selectivity for other layers of the etched structure, the ratio of the flow rate of C 4 F 8 to the flow rate of CH 2 F 2 during the main etching step may be from 0.5 to 4, 3 < / RTI >

During dielectric etching, preferably, the top electrode is electrically grounded and RF power at one or more power levels (and frequency) is applied to the bottom electrode. Also preferably, the upper electrode comprises a showerhead-shaped electrode which may comprise a dual gas feed configuration, the showerhead-like electrode having a radial (edge) zone surrounding the center zone and a center zone, It includes two or more gas supplies that pass through the same zone. In the dual gas supply configuration, the flow rate of the etching gas passing through the center zone and also through the edge zone extending into the surrounding area can be controlled (i.e., the flow rate ratio can be controlled). One example of a plasma etch reactor including a showerhead-type electrode having a dual gas supply configuration is disclosed in co-owned US Pat. No. 6,245,192, the disclosure of which is incorporated herein by reference.

The dielectric layer may be formed of a material selected from the group consisting of silicon nitride, undoped or doped silicon oxide (e.g., fluorinated silicon oxide), spin-on glass, boron phosphate silicate glass (BPSG) Silicate glass, undoped or doped thermal growth oxide, undoped or doped TEOS (tetraethoxyorthosilicate) deposited silicon oxide, and an inorganic or organic low dielectric constant (i.e., low-k) layer. Such a layer may form part of a damascene structure. The dopant for the dielectric material may include, but is not limited to, boron, fluorine, phosphorus, and / or arsenic.

The dielectric layer may be formed on the semiconductor substrate, or the dielectric layer may be formed on the conductive or semiconductor layer. For example, the dielectric layer may be formed of a conductive or semiconductor layer such as polycrystalline silicon or a metal layer containing a silicide such as aluminum, copper, titanium, tungsten, molybdenum, nitride such as titanium nitride, titanium silicide, cobalt silicide, tungsten silicide, molybdenum silicide, Can be on.

Figure 4 illustrates a variation of how an edge ring assembly may be mounted on a base plate rather than a coupling ring. The edge ring 480 of the edge ring assembly 470 and the dielectric spacer ring 485 are supported on the surface of the base plate 460 and the substrate 410 is supported on the substrate support 450, The support surface 454 of the substrate support 450 is contained in the center of the base plate 460 and the surface of the substrate support is in contact with the edge of the edge ring assembly Lt; RTI ID = 0.0 > vertically < / RTI > To facilitate heat transfer from the edge ring assembly 470 to the base plate 460, the gas supply source 430 supplies heat transfer gas through one or more passageways 432 to the components of the edge ring assembly and / Can be fed into the interface between the supports. A preferred heat transfer gas is helium.

It is believed that a more uniform plasma etch of the semiconductor substrate can be achieved using the edge ring assembly. In particular, the edge ring assembly can be used to manipulate the RF impedance path near the edge of the substrate. The RF impedance path can be controlled by the choice of material for the dielectric spacer ring and the edge ring.

Generally, the RF impedance path from the powered bottom electrode to the plasma through both the substrate support and the substrate may be different from the RF impedance path from the periphery of the bottom electrode to the plasma. Due to the edge effects from the substrate support and substrate, the plasma density may not be uniform across the substrate, so the etch may not be uniform.

Without being bound by theory, it is believed that the dielectric spacer ring reduces RF coupling to the edge ring and increases RF coupling to the periphery of the substrate. By increasing RF coupling around the substrate, the etch rate at the periphery of the substrate can be increased. Also, the integration of the dielectric spacer rings around the substrate support reduces the build up of polymer along the substrate edge and also below the substrate edge. Typically, such polymers are produced during the etching step (e. G., As a by-product of etching photoresist and / or dielectric materials).

The build up of the bevel polymer (e.g., the polymer at the edge and / or the bottom of the substrate) was measured after the dielectric etch was completed. After completing the etching process for a standard over etch time of 10 seconds (first over etch) and 30 seconds (second over etch) without incorporating a dielectric spacer ring around the substrate support, a bevel polymer build of 55-65 nm Up. It was observed that the bevel polymer buildup was increased by increasing the overetching time.

Due to the use of dielectric spacer rings, the amount of bevel polymer buildup has decreased. By incorporating a dielectric spacer ring (2.62 mm high x 0.965 mm wide) between the edge ring and the substrate support, a 50% increase in standard over etch time as well as a standard over etch (i.e., a 15 second over etch and a 45 second over Etching), there was virtually no bevel polymer on the substrate. However, after the overetching time was further increased, a bevel polymer buildup was observed. Table 1 summarizes the amount of bevel polymer buildup (measured in nm) as a function of overetching time with respect to the preferred dielectric etch process.

Effect of Dielectric Spacer Ring on Bevel Polymer Buildup Over-etching conditions Bevel polymer
(No dielectric spacer ring)
Bevel polymer
(With dielectric spacer ring)
Standard 55 to 65 nm none + 50% > 65 nm none + 75% > 65 nm ~ 16 nm + 100% > 65 nm ~ 30 nm + 200% > 65 nm ~ 75 nm

A preferred method of etching a semiconductor substrate in a plasma etch chamber includes mounting a substrate on a substrate surface of a substrate support in a plasma etch chamber, supplying an etch gas into the chamber, activating the etch gas to adjacent And etching the substrate with a plasma, wherein the edge ring assembly including the edge ring and the dielectric spacer ring surrounds the substrate support. The edge ring surrounds the substrate support, and the dielectric spacer ring is inserted between the edge ring and the substrate support. Because the dielectric spacer ring is a consumable part, after etching a predetermined number of semiconductor substrates, the dielectric spacer ring can be removed from the chamber and replaced with another dielectric spacer ring.

Although the electrode is referred to as the "upper" or "lower" electrode and is shown in the figures, the edge ring assembly is configured to incorporate an integrated plasma etch chamber so that the substrate to be etched is fixed (i.e., clamped) can do. The edge ring assembly can also be used to etch non-circular substrates.

As used herein, the terms "comprises" and "comprising" are chosen to designate the presence of stated features, steps or components, but the use of the terms does not exclude the presence or addition of one or more other features, steps, components or groups thereof Do not.

All references cited herein are incorporated by reference in their entirety to the same extent as if each individual reference was specifically and individually indicated to be incorporated by reference in its entirety.

While the invention has been described with reference to preferred embodiments thereof, it should be understood that modifications and variations may be resorted to, as will be apparent to those skilled in the art. Such variations and modifications are to be considered as being within the scope and spirit of the invention as defined by the appended claims.

Claims (29)

  1. An edge ring assembly configured to surround a substrate support surface in a plasma etch chamber,
    The edge ring having a dimension that is below the substrate located on the substrate support surface in the chamber and has a dimension to provide a clearance gap between the lower surface of the substrate and the upper surface of the edge ring; And
    The dielectric spacer ring having a dimension between the edge ring and the substrate support surface to provide a gap between a lower surface of the substrate positioned on the substrate support surface and an upper surface of the dielectric spacer ring,
    Wherein the dielectric spacer ring is bonded to the upper surface of the ring for coupling or the upper surface of the base plate.
  2. delete
  3. The method according to claim 1,
    Wherein a radial gap between the edge ring and the dielectric spacer ring, a radial gap between the dielectric spacer ring and the substrate support surface, or both radial gaps is less than 0.25 mm.
  4. The method according to claim 1,
    Wherein the dielectric spacer ring has a width of 0.5 to 2.5 mm and a height of 1 to 3 mm.
  5. The method according to claim 1,
    Wherein the dielectric spacer ring comprises an axially upwardly extending portion formed on the radially inner surface of the ring for coupling.
  6. The method according to claim 1,
    Wherein an upper surface of the dielectric spacer ring and an innermost upper surface of the edge ring are substantially coplanar when the dielectric spacer ring and the edge ring are mounted to the chamber.
  7. The method according to claim 1,
    Wherein the dielectric spacer ring, the coupling ring, or both the dielectric spacer ring and the coupling ring are made of quartz.
  8. The method according to claim 1,
    Wherein the edge ring is comprised of silicon, silicon carbide, aluminum oxide, aluminum nitride, silicon nitride, quartz, or a combination thereof.
  9. The method according to claim 1,
    Wherein the radially outer portion of the edge ring is thicker than the dielectric spacer ring.
  10. The method according to claim 1,
    Further comprising at least one gas passageway extending through the coupling ring or the base plate, the gas passageway extending along the edge ring, the dielectric spacer ring, or adjacent surfaces of both the edge ring and the dielectric spacer ring An edge ring assembly configured to supply a heat transfer gas.
  11. The plasma etch chamber comprising an edge ring assembly configured to surround a substrate support surface in a plasma etch chamber,
    A substrate support having the substrate support surface;
    The edge ring having a dimension that is below the substrate located on the substrate support surface in the chamber and has a dimension to provide a clearance gap between the lower surface of the substrate and the upper surface of the edge ring; And
    The dielectric spacer ring having a dimension between the edge ring and the substrate support surface to provide a gap between a lower surface of the substrate positioned on the substrate support surface and an upper surface of the dielectric spacer ring,
    Wherein the dielectric spacer ring is bonded to the upper surface of the ring for coupling or the upper surface of the base plate.
  12. 12. The method of claim 11,
    Wherein the substrate is mounted on the substrate support surface such that an outer edge of the substrate extends over the radially inner portion of the dielectric spacer ring and the edge ring.
  13. 13. The method of claim 12,
    Wherein the dielectric spacer ring has a width of 0.5 to 2.5 mm and a height of 1 to 3 mm.
  14. 12. The method of claim 11,
    Wherein the distance between the surface of the substrate support surface and the surface of the upper surface of the dielectric spacer ring is less than 0.25 mm and the distance between the surface of the substrate support surface and the surface of the upper surface of the radially inner portion of the edge ring is less than 0.25 mm, Etch chamber.
  15. 13. The method of claim 12,
    Wherein the gap between the lower surface of the substrate and the upper surface of the dielectric spacer ring is less than 0.25 mm and the gap between the lower surface of the substrate and the upper surface of the radially inner portion of the edge ring is less than 0.25 mm.
  16. 12. The method of claim 11,
    Wherein the plasma etch chamber comprises a parallel plate reactor having an upper showerhead electrode facing the substrate support.
  17. 12. The method of claim 11,
    Wherein the substrate support comprises an RF driving electrode.
  18. 12. The method of claim 11,
    Wherein the substrate support comprises an electrostatic chuck.
  19. 12. The method of claim 11,
    The edge ring assembly includes: (i) RF coupling between the edge ring and the base plate; (ii) arc generation between the edge ring and the base plate; and (iii) , Or polymer deposition on both the bottom and the edge. ≪ Desc / Clms Page number 13 >
  20. 12. A method of etching a layer formed on a semiconductor substrate in the plasma etch chamber of claim 11,
    Supporting the semiconductor substrate on the substrate support surface located inside the chamber;
    Supplying an etching gas to the chamber;
    Forming a plasma adjacent the exposed surface of the substrate; And
    And etching the at least one layer formed on the semiconductor substrate with the plasma.
  21. A method of replacing the dielectric spacer ring in the plasma etch chamber of claim 11,
    Removing the dielectric spacer ring from the chamber after etching a predetermined number of semiconductor substrates, and replacing the dielectric spacer ring with another dielectric spacer ring.
  22. The dielectric spacer ring having a dimension to provide a clearance gap between the lower surface of the substrate positioned on the substrate support surface in the plasma etch chamber and the upper surface of the dielectric spacer ring,
    The dielectric spacer ring also has a dimension that lies beneath the substrate and is surrounded by the edge ring having a dimension to provide a gap between the lower surface of the substrate and the upper surface of the edge ring,
    Wherein the dielectric spacer ring is bonded to the upper surface of the ring for coupling or the upper surface of the base plate.
  23. 23. The method of claim 22,
    Wherein the dielectric spacer ring has a width of 0.5 to 2.5 mm and a height of 1 to 3 mm.
  24. 23. The method of claim 22,
    Wherein the dielectric spacer ring comprises an axially upwardly extending portion formed on the radially inner surface of the coupling ring.
  25. 23. The method of claim 22,
    Wherein an upper surface of the dielectric spacer ring and an innermost upper surface of the edge ring are substantially coplanar when the dielectric spacer ring and the edge ring are mounted to the plasma etch chamber.
  26. 23. The method of claim 22,
    Wherein the dielectric spacer ring is made of quartz.
  27. 23. The method of claim 22,
    Wherein the dielectric spacer ring has a width of 0.95 to 1.0 mm and a height of 2.5 to 2.7 mm.
  28. 23. The method of claim 22,
    Wherein the dielectric spacer ring is configured to surround an electrostatic chuck (ESC) in the plasma etch chamber, the dielectric spacer ring having a narrower width than the projecting portion of the wafer supported on the ESC.
  29. 25. The method of claim 24,
    Wherein the dielectric spacer ring and the coupling ring are made of a monolithic quartz material.
KR20087003093A 2005-08-08 2006-07-24 Edge ring assembly with dielectric spacer ring KR101432832B1 (en)

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TW200715402A (en) 2007-04-16
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