KR101370790B1 - Bar type light emitting device - Google Patents

Bar type light emitting device Download PDF

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Publication number
KR101370790B1
KR101370790B1 KR1020070098098A KR20070098098A KR101370790B1 KR 101370790 B1 KR101370790 B1 KR 101370790B1 KR 1020070098098 A KR1020070098098 A KR 1020070098098A KR 20070098098 A KR20070098098 A KR 20070098098A KR 101370790 B1 KR101370790 B1 KR 101370790B1
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South Korea
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light emitting
emitting diode
emitting device
diode chip
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KR1020070098098A
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Korean (ko)
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KR20090032667A (en
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이정상
신옥희
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삼성전자주식회사
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Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, wherein a preferred embodiment of the present invention comprises: first and second wiring structures arranged parallel to each other in the longitudinal direction, at least one window formed between the first and second wiring structures, A substrate having first and second main surfaces opened by the window and facing each other, and having first and second electrodes, wherein the first and second electrodes are connected to the first and second wiring structures, respectively. The light emitting device includes at least one light emitting diode chip disposed in the at least one window, and a resin part filled in the window so that the light emitting diode chip is fixed in the window.

According to the present invention, it is possible to easily manufacture as compared to the lead frame type light emitting device, and a miniaturized light emitting device having a uniform luminance distribution can be obtained through a wide directing angle.

Package, Light Emitting Diode, White, Line Light Source, Light Emitting Device

Description

Light emitting device {Bar type light emitting device}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly, to a light emitting device that can be used in a side view type backlight unit having a semiconductor light emitting diode chip.

In general, as a light emitting device having a light emitting diode chip, a light emitting device structure having a case in which a white resin is injection molded into a lead frame is widely used. Such a light emitting device mounts an LED chip so as to be connected to a lead frame in a groove part of a case, and then fills the groove part with resin. In particular, in order to manufacture a white light emitting device, a method of containing the phosphor powder in the resin filled in the groove portion can be used.

However, the conventional light emitting device structure has some disadvantages in terms of miniaturization and yield.

For example, in the case of a side view type light emitting device that can be surface mounted mainly used as a light source for a backlight of a display portion of a mobile phone, a thinning of the side light emitting device is also required according to the thinning of a mobile phone. have. However, in the conventional light emitting device structure, since the groove portion must be provided for mounting the LED chip, there is a difficulty in manufacturing the case having it sufficiently reduced in size.

In addition, after the injection molding of the case together with the lead frame, a complicated process of mounting the LED chip and providing the resin packaging portion to the groove portion, there is a problem that the yield is lowered and the process cost is increased.

Particularly, in the conventional white light emitting device, chromatic dispersion may be uneven due to the dispersion of the phosphor filling amount by the dispenser during the dispensing of the liquid resin containing the phosphor powder in the groove portion.

The present invention is to solve the above problems, an object of the present invention is easy to manufacture compared to the lead frame type light emitting device, and to provide a miniaturized light emitting device having a uniform luminance distribution through a wide direct angle will be.

In order to achieve the above object, a preferred embodiment of the present invention,

First and second wiring structures disposed parallel to each other in the longitudinal direction, at least one window formed between the first and second wiring structures, and first and second main surfaces opened by the windows and opposed to each other; At least one light emitting diode chip and at least one light emitting diode chip disposed at the at least one window such that the first and second electrodes are connected to the first and second wiring structures, respectively. Provided is a light emitting device including a resin part filled in a window such that a diode chip is fixed in the window.

Preferably, the window and the light emitting diode chip may be a plurality.

In this case, the plurality of windows may be formed spaced apart from each other by a predetermined distance in the longitudinal direction of the substrate.

In addition, the plurality of light emitting diode chips may be disposed on one straight line.

In addition, the plurality of light emitting diode chips are preferably connected in parallel with each other in terms of power efficiency.

Preferably, the substrate is a flexible substrate, and specifically, the substrate may be a liquid crystal polymer (LCP) substrate.

In addition, the first and second wiring structures may be electrode patterns formed on any one of the first and second main surfaces.

The first and second electrodes may be formed on one surface of the light emitting diode chip, and the light emitting diode chip may be disposed on the window such that the electrode forming surface faces the thickness direction of the substrate.

In this case, the first and second wiring structures may be electrode patterns formed on the first main surface, and the light emitting diode chip may be disposed on the window such that the electrode forming surface faces the same direction as the first main surface. .

Further, the light emitting diode chip is preferably disposed in the window so that the surface facing the electrode forming surface is on the same plane as the second main surface in terms of ensuring luminance uniformity.

In addition, the first and second electrodes and the first and second wiring structures may be connected by wire bonding, respectively. In this case, it is preferable that the said resin part was formed so that the said wire might be covered.

The resin part may be formed to cover the electrode forming surface of the light emitting diode chip and the first main surface of the substrate.

In addition, the resin part may be formed to cover the remaining surface of the light emitting diode chip except the surface opposite to the electrode formation surface.

Additionally, the light emitting diode chip may further include a transparent resin layer formed on a surface opposite to the electrode formation surface.

In this case, it is preferable that the transparent resin layer contains phosphor particles.

Furthermore, the thickness of the transparent resin layer is preferably 0.3 mm or less.

On the other hand, in a preferred embodiment of the present invention, the light emitting diode chip may further include a phosphor film formed to cover the remaining surfaces other than the electrode forming surface.

Preferably, the light emitting diode chip emits blue light, and the phosphor particles or the phosphor film may include a yellow phosphor.

The resin portion is preferably made of a white resin, more preferably, the resin portion may include TiO 2 .

On the other hand, the first and the second wiring structure may be provided with a connection portion connected to the first and second electrodes, respectively, to efficiently configure the coupling structure.

Finally, it is preferable to further include one or more zener diodes connected to the first and second wiring structures.

As described above, according to the present invention, it is possible to easily manufacture as compared to the lead frame type light emitting device, and a miniaturized light emitting device having a uniform luminance distribution can be obtained through a wide directing angle.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1A and 1B show a light emitting device according to an embodiment of the present invention, in which FIG. 1A corresponds to a shape viewed from above and FIG. 1B corresponds to a shape viewed from the side.

1A and 1B, the light emitting device 10 according to the present exemplary embodiment includes a liquid crystal polymer (LCP) substrate, a plurality of light emitting diode chips L, a resin part, and phosphor particles. Transparent resin layer and zener diode (Z).

In this case, the LCP substrate has first and second wiring structures arranged in parallel in the length (l) direction, and a plurality of windows W are formed between the first and second wiring structures. Here, the window (W) is provided as a space for the arrangement of the light emitting diode chip, the light emitting diode chip (L) is the window so that the light extraction surface and the electrode forming surface opposite thereto the direction of the thickness of the LCP substrate (W) is disposed. More details on this will be described later.

In the present embodiment, the substrate used for the light emitting device 10 is used as a flexible substrate, particularly an LCP substrate, in order to enhance stability and flexibility in the light emitting device having a long length in one direction. That is, since ceramic substrates and the like generally used for mounting the LED chip have limitations in manufacturing into an elongated shape, it is preferable to use a flexible substrate such as an LCP substrate when used in a light emitting device as in the present embodiment. desirable. By using the flexible LCP substrate as described above, in addition to the shape of FIG. 1 of the light emitting device, there are advantages in that the shape of the light emitting device can be variously modified.

In addition, LCP is suitable as a PCB material in terms of excellent electrical properties, low hygroscopicity and low dimensional change rate. In particular, LCP has a heat resistance of about 280 ° C, which is somewhat inferior in heat resistance to polyimide (PI) having a heat resistance of about 300 ° C, but exhibits high mechanical strength due to the self-reinforcing effect depending on the orientation of rigid molecular rings. Is low.

In addition to these advantages, LCP has excellent electrical insulation properties, is relatively stable to solvents such as acids and alkalis, has a low melt viscosity, and is easy to mold and can be formed to a thin thickness.

However, according to the embodiment, other materials having flexibility besides LCP, for example, FR-4, BT resin, or the like, may be used as the substrate. In addition, although it is preferable to use a flexible substrate as described above, in other embodiments, a general PCB substrate may be used instead of the flexible substrate.

On the other hand, as described above, the light emitting device 10 is a structure in which a plurality of light emitting diode chips are arranged in the longitudinal direction on one substrate, it can be easily used for a side view type backlight. That is, as will be described later, compared to the case of mounting each light emitting package in a conventional side view type backlight, it can be manufactured more easily, and furthermore, the height of the light emitting surface of the light emitting diode chip can be made uniform, so that the luminance distribution The uniformity of can be improved.

The zener diode Z may be provided to prevent electrostatic discharge, and may be connected in parallel with other light emitting diode chips as described below. However, in some embodiments, the zener diode Z may not be included in the light emitting device 10.

In the present embodiment, the light emitting device 10 includes five light emitting diode chips L and one zener diode Z, the size of which is 30 mm x 0.4 mm x 1.0 mm. Here, the numerical values correspond to the length l, the height h, and the thickness d, respectively.

As such, when the light emitting device 10 is used for a side view type backlight, the height of the light emitting device 10 is about 0.4 mm, which may contribute to thinning of the backlight as compared with a conventional lead frame type light emitting device.

In addition, the light emitting device 10 may be manufactured by forming a window W of the LCP substrate, arranging a light emitting diode chip in the window W, and then filling a white resin, thereby providing a plurality of light emitting diodes. The heights of the light extraction surfaces of the chips can be uniform to each other. Accordingly, in the case of the backlight unit employing the light emitting device 10, it is expected to improve the uniformity of the luminance distribution.

In the present embodiment, the light emitting device 10 consisting of five light emitting diode chips has been described as an example. However, the number of light emitting diode chips may be appropriately adjusted as necessary, and although not separately illustrated, only one light emitting diode chip is included. The light emitting device may also be implemented.

Furthermore, as described above, the shape of the light emitting device may also be modified as necessary, such as a rectangle or a circle, rather than a bar type, as shown in FIGS. 1A and 1B.

Hereinafter, elements constituting the light emitting device will be described in detail with reference to FIGS. 2 and 3.

FIG. 2 is an enlarged view of the area A1 around the LED chip in FIG. 1A, and the right side shows the shape viewed from the side. 3 is an enlarged view of the area A2 around the light emitting diode chip L in FIG. 1B.

2 and 3, in the light emitting device according to the present embodiment, the light emitting diode chip 11 includes first and second electrodes 11a and 11b and the first and second electrodes. The surface on which the 11a, 11b is formed is arrange | positioned at the window W of the LCP board | substrate 12 so that it may face the resin part 14. As shown in FIG.

In this case, the light emitting diode chip 11 corresponds to the light extraction surface mainly on the surface opposite to the electrode formation surface. In the present specification, the term “light extraction surface” may be understood as a surface facing the surface on which the first and second electrodes 11a and 11b are formed as a direction in which light is mainly emitted from the LED chip 12. Can be. That is, in the light emitting diode chip 11 employed in the present embodiment, the first and second electrodes 11a and 11b are formed on the same surface, and the light emitted from the active layer is mainly emitted to the opposite surface. .

In the present embodiment, the transparent resin layer 15 is formed on the light extraction surface, and in particular, the transparent resin layer 15 may include phosphor particles for white light emission.

For example, if the LED chip 11 emits blue light and the phosphor particles include a yellow fluorescent material, the light emitting device may emit white light. In this case, it may be understood by those skilled in the art that white light emission is possible by appropriately adjusting the emission wavelength of the light emitting diode chip 11 and the fluorescent material.

Meanwhile, the thickness t of the transparent resin layer 15 including phosphor particles may also be appropriately adjusted to improve the white light emission function and the light emission efficiency. In the present embodiment, the thickness t is greater than 0.3 mm. If it becomes large, the degree of decrease in luminous efficiency may be severed by light absorption by the transparent resin layer 15.

Therefore, in consideration of this point, the thickness t of the transparent resin layer 15 is preferably 0.3 mm or less, and the lower limit thereof may be suitably employed within the above range.

The resin part 14 fills the inside of the window W to fix the light emitting diode chip 11 to the window W, and further, protects the light emitting diode chip 11.

As shown in FIG. 3, in the present embodiment, the resin part 14 is formed to cover the remaining surfaces except for the surface facing the electrode forming surface of the light emitting diode chip 11. As described above, the transparent resin layer 15 is formed on the surface opposite to the electrode forming surface.

In general, although the window may be filled with a transparent resin that may be employed, the resin part 14 may be made of a white resin. This is because it is important to reduce the amount of light emitted in the direction of the electrode formation surface of the light emitting diode chip 11 in order to improve the luminous efficiency.

Therefore, when the resin portion 14 is made of white resin, most of the light emitted from the light emitting diode chip 11 and directed toward the resin portion 14 may be reflected and guided toward the light extraction surface. An improvement in efficiency can be expected.

In this case, the thickness of the resin part 14 may be appropriately adjusted in consideration of a reflection function and a space disposed in the backlight. In the present embodiment, as described above, the resin part 14 and the LCP substrate ( 12) was added so that the total thickness would be 1.0 mm.

On the other hand, the present invention is not limited thereto, but in the present embodiment, a silicone resin including TiO 2 is employed as the white resin forming the resin portion 14, and other materials having high light reflectance may be employed.

First and second wiring structures 13a and 13b disposed on the LCP substrate 12 are electrically connected to the electrodes 11a and 11b of the light emitting diode chip 11, respectively. Power on

The first and second wiring structures 13a and 13b correspond to electrode patterns formed on both sides of the LCP substrate 12 in parallel with each other along the length direction of the LCP substrate 12. It can be obtained by plating.

In this case, in order to obtain an efficient connection structure with the first and second electrodes 11a and 11b, the first and second wiring structures 13a and 13b are connected to the first and second electrodes 11a and 11b. It is preferable to be formed in the same direction. Furthermore, as shown in FIG. 2, the first and second wiring structures 13a and 13b may have connection portions C, respectively.

In addition, the connection part C and the first and second electrodes 11a and 11b may be electrically connected by a wire made of Au or the like. In this case, the resin part 14 may have such a wire bonding structure and the It is preferable that the LCP substrate 12 is formed so as to cover the surface (first main surface) on which the first and second wiring structures 13a and 13b are formed.

4 is an equivalent circuit diagram illustrating a connection state of a light emitting diode chip and a zener diode in the light emitting device according to the above-described embodiment.

As shown in FIG. 4, in the light emitting device, it is seen that each LED chip L is connected in parallel with each other, and the zener diode Z is also connected in parallel with the LED chips. As such, connecting the diodes L and Z in parallel may provide power more efficiently than in the case of connecting in series.

5, 6, and 7 are views of a region around a light emitting diode chip in a lateral direction in a light emitting device according to another embodiment of the present invention, and may be understood as corresponding to FIG. 3 in the previous embodiment.

First, in the case of the light emitting device according to the embodiment of FIG. 5, like the previous embodiment, the light emitting diode chip 11, the LCP substrate 12, the resin part 14, and the like are included. It can be understood as the same as in the embodiment.

In the case of this embodiment, the difference with the previous embodiment is that the area | region in which the said resin part 14 was formed is discontinuous. That is, as shown in FIG. 5, the resin part 14 protecting the light emitting diode chip 11 is formed only in an area necessary for performing its function, that is, reflection and molding functions, thereby improving process efficiency. .

Next, the light emitting device according to the embodiment of FIG. 6 includes the light emitting diode chip 21, the LCP substrate 22, the resin part 24, and the like as in the previous embodiment.

Unlike the embodiment of FIG. 3, the light emitting diode chip 21 includes a phosphor film 25. Here, the phosphor film 25 is formed to cover the remaining surfaces except for the surfaces on which the first and second electrodes 21a and 21b of the light emitting diode chip 21 are formed. The phosphor film 25 is provided for converting blue light emitted from the light emitting diode chip 21 to emit white light like the phosphor layer of the previous embodiment.

In the case of the embodiment of Fig. 6, compared with the case of forming the phosphor layers on the light extraction surface of the light emitting diode chip, the height of the light extraction surface can be obtained by using the light emitting diode chip 21 in which the phosphor film of the same shape is collectively formed. Uniformity can be improved.

FIG. 7 is a somewhat modified embodiment of the embodiment of FIG. 6. In the case of the light emitting device shown in FIG. 7, the light emitting diode chip 31 includes the light emitting diode chip 31 having the phosphor film 35, the LCP substrate 32, and the resin part 34, like the light emitting diode chip 31. Has first and second electrodes 31a and 31b formed on a surface on which the phosphor film 35 is not formed.

However, in the embodiment of FIG. 7, the light emitting diode chip 31 further includes a transparent resin layer 36 formed on the side surface of the phosphor film 35 and the resin part 34. Can direct the angle of light emitted from

As described above, the light emitting device can reduce the size and manufacturing cost of the light emitting device such as a conventional lead frame package, and can mount the light emitting diode chip at a uniform height to improve the uniformity of the luminance distribution. It is possible to minimize the occurrence of the dark portion due to the space between the diode chips.

8 and 9 illustrate an electrode structure that can be employed in the light emitting device according to the present invention. 8 and 9 may replace the electrode structure 11a on the left side in FIGS. 1A and 1B. However, it will be apparent to those skilled in the art that the electrode structure may be modified in various forms as necessary in addition to the electrode structure to be described below.

First, referring to FIGS. 8A and 8B, the electrode pattern 81a formed on one surface of the ceramic substrate may be electrically connected to the electrode pattern formed on the opposite surface by the conductive through hole.

As shown in FIG. 8A, the conductive through hole has a shape close to a quadrant. This is for the convenience of the process by manufacturing a plurality of light emitting devices at a time, by using four circular light emitting devices which are adjacent to each other by sharing one circular conductive through hole in four equal parts. However, depending on the precision of the process, the shape of the conductive through hole may not be exactly a quadrant, for example, an elliptical conductive through hole may be divided into four quarters. Alternatively, conductive vias filled with a material such as Ag may be used instead of the conductive through holes.

Next, the electrode structures shown in FIGS. 9A and 9B are slightly modified electrode structures in FIG. 8, and the first and second electrode patterns 91a and 91b are formed on the same side in the longitudinal direction of the ceramic substrate. For example, as illustrated in FIG. 9A, the first electrode pattern 91a may be a positive terminal, and the second electrode pattern 91b may be a negative terminal.

As in the embodiment of FIG. 8, the first and second electrode patterns 91a and 91b may be electrically connected to an electrode pattern connected to the light emitting diode chip by conductive through holes.

10 is a plan view schematically illustrating a backlight unit employing a light emitting device according to the present invention.

The light emitting device employed in the backlight unit corresponds to the light emitting device described in FIG. 1 in the above-described embodiment. In this case, the backlight unit may be used as a backlight such as an LCD panel, and may also be used as a white lighting device.

Referring to FIG. 10, the light emitting device is mounted to the backlight unit to be in a side view type.

In addition, the backlight unit includes a light guide plate 101 disposed on a path of light emitted from the light emitting device, and first and second wiring structures 102a and 102b electrically connected to the wiring structure of the light emitting device.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

1A and 1B show a light emitting device according to an embodiment of the present invention, in which FIG. 1A corresponds to a shape viewed from above and FIG. 1B corresponds to a shape viewed from the side.

FIG. 2 is an enlarged view of the area A1 around the LED chip in FIG. 1A, and the right side shows the shape viewed from the side.

3 is an enlarged view of the area A2 around the LED chip in FIG. 1B.

4 is an equivalent circuit diagram illustrating a connection state of a light emitting diode chip and a zener diode in the light emitting device according to the embodiment of FIG. 1A.

5, 6, and 7 show a side view of a region around a light emitting diode chip in a light emitting device according to another embodiment of the present invention.

8 and 9 illustrate electrode patterns that can be employed in the light emitting device according to the present invention.

10 is a plan view schematically illustrating a backlight unit employing a light emitting device according to the present invention.

Description of the Related Art

11: light emitting diode chip 11a, 11b: first and second electrodes

12: LCP substrate 13a, 13b: first and second wiring structure

14: resin portion 15: transparent resin layer

W: Window Z: Zener Diode

Claims (24)

First and second wiring structures disposed parallel to each other in the longitudinal direction, at least one window formed between the first and second wiring structures, and first and second main surfaces opened by the windows and opposed to each other; A substrate; An electrode formation surface on which first and second electrodes are disposed, and a light extraction surface opposite to each other, wherein the first and second electrodes are respectively connected to the one or more windows so as to be connected to the first and second wiring structures, respectively. One or more light emitting diode chips disposed; And A resin part filled in the window so that the light emitting diode chip is fixed in the window, covering the first main surface of the substrate and including a region protruding in a direction toward the first main surface; Including, And the light emitting diode chip is disposed in the window such that the light extraction surface faces in a direction opposite to the first main surface. The method of claim 1, The window and the light emitting diode chip is a plurality, And the plurality of windows are formed to be spaced apart from each other by a predetermined distance in the longitudinal direction of the substrate. The method of claim 1, The substrate is a light emitting device, characterized in that the flexible substrate. The method of claim 1, And the first and second wiring structures are electrode patterns formed on the first main surface. The method of claim 1, And the light emitting diode chip is disposed in the window such that the electrode forming surface faces the thickness direction of the substrate. The method of claim 1, The resin unit is a light emitting device, characterized in that made of a white resin. The method according to claim 6, And the resin part is formed to cover the remaining surface of the light emitting diode chip except for the light extraction surface. The method according to claim 6, Light emitting device further comprises a transparent resin layer formed on the electrode forming surface and the light extraction surface of the light emitting diode chip. The method according to claim 6, The light emitting diode chip further comprises a phosphor film formed to cover the remaining surfaces other than the electrode formation surface. The method of claim 1, And the first and second wiring structures have connection portions connected to the first and second electrodes, respectively. delete delete delete delete delete delete delete delete delete delete delete delete delete delete
KR1020070098098A 2007-09-28 2007-09-28 Bar type light emitting device KR101370790B1 (en)

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KR102568252B1 (en) * 2016-07-21 2023-08-22 삼성디스플레이 주식회사 Light emitting device and fabricating method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124705A (en) * 2000-10-17 2002-04-26 Citizen Electronics Co Ltd Light emitting diode and its manufacturing method
KR200414385Y1 (en) 2005-12-21 2006-04-20 파라 라이트 일렉트로닉스 컴퍼니 리미티드 Structure of light emitting diode
KR20060093069A (en) * 2005-02-18 2006-08-23 니치아 카가쿠 고교 가부시키가이샤 Light emitting device with light distribution characteristic controlling lens
KR20070047680A (en) * 2005-11-02 2007-05-07 가부시끼가이샤 도리온 Light emitting diode mounting substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124705A (en) * 2000-10-17 2002-04-26 Citizen Electronics Co Ltd Light emitting diode and its manufacturing method
KR20060093069A (en) * 2005-02-18 2006-08-23 니치아 카가쿠 고교 가부시키가이샤 Light emitting device with light distribution characteristic controlling lens
KR20070047680A (en) * 2005-11-02 2007-05-07 가부시끼가이샤 도리온 Light emitting diode mounting substrate
KR200414385Y1 (en) 2005-12-21 2006-04-20 파라 라이트 일렉트로닉스 컴퍼니 리미티드 Structure of light emitting diode

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