KR101365201B1 - Shower head assembly and apparatus for chemical vapor deposition having the same - Google Patents

Abstract

The present invention relates to a showerhead assembly and a chemical vapor deposition apparatus having the same, which improves the pressure control inside the shower head or the supply structure of the process gas injected into the chamber so as to easily control concentration of chemicals. The showerhead assembly according to the present invention includes a first head having a first injection part for injecting a process gas, a second head having a second injection part laminated on the first head for injecting a process gas, a first head and A plurality of gas supply to each of the second head has a concentric circle in the transverse direction with respect to the injection direction of the process gas and spaced apart at regular intervals to supply the process gas to the inner center of any one of the first head and the second head, respectively It is characterized by including a wealth. As a result, the plurality of gas supply units may be spaced apart at regular intervals from one of the first head and the second head so as to uniformly supply the process gas to the internal space in which the gas supply unit is disposed, and thus the temperature of the process gas. The flow rate and doping ratio can be adjusted.

Description

TECHNICAL FIELD The present invention relates to a shower head assembly and a chemical vapor deposition apparatus having the shower head assembly.

The present invention relates to a showerhead assembly and a chemical vapor deposition apparatus having the same, and more particularly, to a showerhead assembly and a chemical vapor deposition apparatus having the same injecting a process gas into the chamber containing the substrate.

The chemical vapor deposition apparatus is a device for depositing a thin film required on a wafer as a substrate. In the chemical vapor deposition apparatus, the metal organic chemical vapor deposition apparatus is a device for depositing a gallium nitride thin film by supplying chemicals of Group III and Group V into the chamber.

The metal organic chemical vapor deposition apparatus includes a gas supply unit such as a shower head or a nozzle for injecting compounds of group III and group V into the process space inside the chamber. Here, the showerhead has a plurality of spray tubes for spraying Group III and Group V compounds into the chamber. And, the showerhead includes heads having a plurality of gas supply layers for supplying different process gases to respective supply pipes. A cooling layer for protecting the showerhead from heat transmitted from the susceptor is provided at the lowermost end of the showerhead.

On the other hand, a conventional chemical vapor deposition apparatus is disclosed in Korean Patent Laid-Open Publication No. 2011-0129685 entitled "Chemical vapor deposition apparatus and shower head for the same ". The above-described prior art document "Chemical vapor deposition apparatus and showerhead for this " refers to a process in which a gas supply pipe is connected to the outside of heads forming a plurality of gas supply layers. The gas is injected into the chamber through the injection port.

However, in the above-mentioned prior art document "Chemical vapor deposition apparatus and shower head for this", since the process gas is supplied from the outside of the gas supply layer, there is a problem that it is difficult to control the internal pressure of the gas supply layer or adjust the concentration of the chemical have.

Korean Patent Publication No. 2011-0129685

SUMMARY OF THE INVENTION An object of the present invention is to provide a showerhead assembly and a chemical vapor deposition apparatus having the shower head unit and a chemical vapor deposition apparatus, which improves the pressure control inside the shower head or the supply structure of the process gas injected into the chamber so as to easily control concentration of chemicals.

According to the present invention, there is provided a solution for solving the above-mentioned problems, including a first head having a first injection part for injecting a process gas, and a second head having a second injection part laminated on the first head and injecting the process gas. And an inner center of any one of the first head and the second head having a concentric circle in a horizontal direction with respect to an injection direction of the process gas and spaced apart at regular intervals in either one of the first head and the second head. The showerhead assembly is characterized in that it comprises a plurality of gas supply unit for supplying the process gas, respectively.

Here, preferably, the process gas supplied to the first head and the second head may be different from each other.

Each of the plurality of gas supply units supplies a supply pipe for supplying the process gas to one of the inner spaces disposed among the first head and the second head, and a gas extending from the supply pipe and supplied from the outside into the supply pipe. It may include an inlet pipe.

Preferably, the inlet pipe extends in parallel with the supply pipe, and the supply pipe may have a hook shape having an opening formed therethrough such that the inlet pipe passes therethrough.

The first head and the second head further comprises a partition wall for partitioning any one of the inner space in which the plurality of gas supply unit is disposed, the partition wall is partitioned between the plurality of supply pipes arranged in a concentric circle It is preferable.

The supply pipe may include a supply port configured to supply the process gas in a radial direction, and the process gas supplied through the supply port may include the first injection unit and the second injection port in a space where the supply pipe is disposed by the partition wall. It is preferable to be guided to any of the injection parts.

On the other hand, the supply pipe includes a supply port configured to supply the process gas upward, the process gas supplied through the supply port is the first injection portion and the first portion of the space in which the supply pipe is arranged by the partition wall It is preferable to be guided to either of the two injection parts.

On the other hand, according to the present invention, there is provided a chamber for supplying a process gas therein, a susceptor disposed inside the chamber and supporting a substrate reacting with the process gas, and disposed outside the chamber. And a gas supply unit supplying the process gas supplied into the chamber, and a showerhead assembly having the above-described configuration, which is disposed inside the chamber and injects the process gas supplied from the gas supply unit to the susceptor. Chemical vapor deposition apparatus comprising a.

Here, preferably, the process gas supplied from the gas supply part may be injected into the chamber through the injection part of any one of the first head and the second head in which the gas supply part is disposed.

The details of other embodiments are included in the detailed description and drawings.

Effects of the showerhead assembly and the chemical vapor deposition apparatus having the same according to the present invention are as follows.

First, a plurality of gas supply units may be spaced apart at regular intervals from one of the first head and the second head so that the process gas may be uniformly supplied to the internal space in which the gas supply unit is disposed, and thus the temperature of the process gas, Flow rate and doping rate can be adjusted.

Second, since the plurality of gas supply units are spaced at regular intervals with concentric circles to make the injection speed and the injection amount of the process gas injected into the chamber constant, the crystal layer deposition on the substrate can be made uniform.

1 is a cross-sectional view of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention,
2 is a cross-sectional view of the showerhead assembly of the chemical vapor deposition apparatus shown in FIG.
3 is a plan view of a gas supply unit region of the chemical vapor deposition apparatus according to the first embodiment of the present invention;
4 is a perspective view of a gas supply unit of the chemical vapor deposition apparatus according to the second embodiment of the present invention.

Hereinafter, a showerhead assembly according to an embodiment of the present invention and a chemical vapor deposition apparatus having the showerhead assembly will be described in detail with reference to the accompanying drawings.

Prior to the description, the gas supply unit of the showerhead assembly and the chemical vapor deposition apparatus having the same according to an embodiment of the present invention will be described below is disposed in the second head, the gas supply unit may be disposed in the first head Reveal in advance.

In addition, the first and second embodiments of the showerhead assembly and the chemical vapor deposition apparatus having the same according to the present invention are also described with the same reference numerals for the same configuration.

1 is a cross-sectional view of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention.

1, a chemical vapor deposition apparatus 10 according to a preferred embodiment of the present invention includes a chamber 100, a gas supply unit 200, a susceptor 300, a rotation shaft 400, (500), a liner (600), and a showerhead assembly (800). The chemical vapor deposition apparatus 10 supplies a process gas that reacts with the surface of a substrate 1 (or a wafer) accommodated therein to form a crystal layer on the substrate 1. Here, the process gas supplied into the chemical vapor deposition apparatus 10 is divided into a first process gas G1 and a second process gas G2.

The chamber 100 is formed at a lower side of the body 120 and a body 120 for forming a process space in which a substrate 1 and a process gas react to form a crystal layer on the substrate 1. Exhaust port 140 for exhausting the reaction gas G3 (hereinafter referred to as "waste gas") reacted with the substrate 1 to the outside of the body 120, and protrudes toward the center from the inner wall surface of the body 120 It includes a support protrusion 160 for supporting the liner 600.

The gas supply unit 200 supplies the process gas to supply the process gas into the chamber 100. In one embodiment of the present invention, the gas supply unit 200 supplies the first process gas G1 and the second process gas G2.

The susceptor 300 includes a substrate receiving groove 340 formed on a surface of a substrate supporting part 320 as an embodiment of the present invention. The susceptor 300 is disposed inside the chamber 100 to face the showerhead assembly 800, which will be described later. The susceptor 300 is connected to the rotating shaft 400 and rotates so that the crystal layer is deposited with a uniform thickness on the plurality of substrates 1 arranged in the substrate receiving grooves 340.

The rotating shaft 400 is connected to the lower portion of the susceptor 300 to provide rotational force to the susceptor 300. The rotary shaft 400 is rotated by a known power transmission device such as a combination of a belt and a motor, not shown, to provide the generated rotational force to the susceptor 300.

The heating unit 500 includes a heating unit 520, a heat dissipation unit 540, and a power source block 560. The heating unit 500 is accommodated in the inner space of the susceptor 300. The heating unit 500 generates heat transferred to the substrate 1 so that the deposition process on the substrate 1 supported in the substrate receiving groove 340 of the susceptor 300 can be performed smoothly.

The plurality of heating units 520 are disposed to correspond to the central region and the peripheral region of the susceptor 300, respectively. As the heating unit 520 is divided into a plurality of units, the temperature transferred to the center region and the edge region of the substrate supporting unit 320 of the susceptor 300 can be individually adjusted. The number and arrangement of the heating units 520 are different from those of the substrate supporting unit 320 and the substrate supporting unit 320. In this case, Or the arrangement position of the substrate receiving groove 340 can be implemented.

A plurality of heat dissipation units 540 are disposed below the heating unit 520 to dissipate heat inside the susceptor 300. A plurality of power supply blocks 560 are disposed below the plurality of heat dissipation units 540. The power supply block 560 includes positive and negative electrodes connected to the positive and negative electrode blocks and the negative and negative electrode blocks, not shown in the present invention. The anode block and the cathode block are alternately arranged. In this way, since the power supply block 560 is disposed below the heating unit 520, the large current supplied to the power supply unit (not shown) is efficiently distributed and supplied to the heating unit 520.

The liner 600 is disposed between the inner side of the chamber 100 and the outer side wall of the susceptor 300. The liner 600 of the present invention has a "J" cross-sectional shape and is disposed between the chamber 100 and the susceptor 300. The liner 600 is provided in a curved shape so as to prevent swirling of the waste gas G3 and the first and second process gases G1 and G2 are formed on the inner wall of the chamber 100 and the outer wall of the susceptor 300, And particles contained in the waste gas G3, for example, particles are prevented from being deposited. The liner 600 is made of a quartz material excellent in chemical resistance and heat resistance in order to minimize the influence of the liner 600 on the deposition process of the chemical vapor deposition apparatus 10.

Next, FIG. 2 is a cross-sectional view of the showerhead assembly of the chemical vapor deposition apparatus shown in FIG. 1, FIG. 3 is a plan view of a gas supply unit region of the chemical vapor deposition apparatus according to the first embodiment of the present invention, and FIG. 4 is a perspective view of a gas supply unit of the chemical vapor deposition apparatus according to the second embodiment of the present invention.

The showerhead assembly 800 includes a first head 820, a second head 840, a heat dissipation head 860, and a gas supply unit 880, as shown in FIGS. 2 to 4. The showerhead assembly 800 is disposed above the chamber 100 facing the susceptor 300 accommodated inside the chamber 100. The shower head assembly 800 injects the first process gas G1 and the second process gas G2 supplied from the gas supply unit 200 to the plurality of substrates 1 disposed on the susceptor 300.

The first head 820 includes a first head body 822, a first supply chamber 824, a first spray unit 826, and a first head supply pipe 828. The first head 820 injects the first process gas G1 supplied from the gas supply unit 200 to the susceptor 300.

The first head 820 is disposed between the second head 840 and the heat dissipation head 860. The first head body 822 is disposed between the second head body 842 and the heat dissipation body 862, which will be described later, and includes a first supply chamber in which the first process gas G1 supplied from the gas supply unit 200 stays. 824). The first injection part 826 is disposed through the interior of the chamber 100 and the first supply chamber 824. The first injection part 826 is disposed in plurality in a horizontal direction with respect to the plate surface at regular intervals along the plate surface of the first head body 822. The first jet part 826 is disposed to correspond to the entire surface of the substrate supporting part 320 of the susceptor 300 and injects the first processing gas G1 onto the entire surface of the substrate supporting part 320 of the susceptor 300 . The first head supply pipe 828 interconnects the gas supply unit 200 and the first supply chamber 824. The first head supply pipe 828 guides the first process gas G1 supplied from the gas supply unit 200 to the first supply chamber 824.

The second head 840 is stacked on the first head 820 and injects the second process gas G2 supplied from the gas supply unit 200 into the chamber 100. The second head 840 includes a second head body 842, a second supply chamber 844, a second spray unit 846, and a partition wall 848.

The second head body 842 is disposed on the top of the first head body 822 to form a second supply chamber 844 in which the second process gas G2 supplied from the gas supply unit 200 is retained. The second jetting portion 846 is disposed between the inside of the chamber 100 and the second supply chamber 844. In detail, the second injection part 846 passes through the first head body 822 and the second head body 842 to communicate with the inside of the chamber 100. At this time, the second injection unit 846 is disposed in plurality in a horizontal direction with respect to the plate surface of the second head body 842 separately from the first supply chamber 824 formed by the first head body 822. . Here, the second injection unit 846 is disposed between the plurality of first injection units 826.

The partition wall 848 is disposed in the transverse direction with respect to the plate surface of the second head body 842 to partition the second supply chamber 844 into a plurality of spaces. That is, the partition wall 848 is disposed to mutually partition the supply pipes 882 of the plurality of gas supply units 880 arranged in concentric circles to be described later. The partition wall 848 partitions between the supply pipes 882 and restricts the flow of the second process gas G2 supplied from the supply pipe 882 to the second injection part 846 to the second process gas G2. Guide).

The process gases injected from the first head 820 and the second head 840 are different from each other. For example, the first head 820 injects the first process gas G1 and the second head 840 injects a second process gas G2 different from the first process gas G1.

The heat dissipation head 860 is disposed under the first head 820. The heat dissipation head 860 includes a heat dissipation body 862 and a heat dissipation chamber 864. The heat dissipation head 860 is disposed under the first head 820, that is, the lowest end of the shower head assembly 800 to form the heat dissipation chamber 864. The heat dissipation chamber 864 is supplied with a cooling gas to prevent heat from the susceptor 300 to be transferred to the showerhead assembly 800.

Finally, the gas supply unit 880 has a concentric circle in the horizontal direction with respect to the injection direction of the process gas in any one of the first head 820 and the second head 840 is arranged a plurality of spaced apart at regular intervals. The plurality of gas supply units 880 respectively supply process gases to the inner center of any one of the first head 820 and the second head 840. In the first and second embodiments of the present invention, the gas supply unit 880 is disposed in the second head 840. That is, the gas supply unit 880 has a plurality of concentric circles in the second supply chamber 844 of the second head 840. On the other hand, as an embodiment of the present invention, the gas supply unit 880 is disposed in the second supply chamber 844 of the second head 840 is injected into the second injection unit 846 inside the second supply chamber 844 The second process gas G2 is supplied, but the gas supply unit 880 is disposed in the first supply chamber 824 of the first head 820 and sprayed into the first injection unit 826 inside the first supply chamber 824. It is also possible to supply the first process gas G1.

In a first embodiment of the present invention, the gas supply unit 880 includes a supply pipe 882 and an inlet pipe 884. In one embodiment of the present invention, the supply pipe 882 is disposed in the second supply chamber 844 of the second head 840 to supply the second process gas G2 to the internal space of the second supply chamber 844. Since the supply pipe 882 has a concentric circle and is spaced apart from each other, the second process gas G2 may be supplied to each area of the second supply chamber 844 from each supply pipe 882. There is an advantage in that the temperature, flow rate and doping ratio of the second process gas (G2) supplied to can be adjusted. The supply pipe 882 is formed toward the inner center of the second supply chamber 844 from the supply body 882a through which the second process gas G2 flows and the supply body 882a to supply the second process gas G2. It includes a plurality of supply ports (882b). That is, the supply port 882b supplies the second process gas G2 supplied to the supply pipe 882 in the radial direction. The second process gas G2 supplied in the radial direction through the supply port 882b is restricted to flow by the partition wall 848 partitioning each supply pipe 882 and guided to the second injection unit 846. .

On the other hand, the second embodiment of the present invention, the gas supply unit 880, as in the first embodiment of the present invention includes a supply pipe 882 and the inlet pipe 884. Here, the supply pipe 882 is formed from the supply body 882a through which the second process gas G2 flows and the supply body 882a toward the upper portion of the second supply chamber 844 to supply the second process gas G2. It includes a plurality of supply ports (882b). That is, the supply port 882b is formed to supply the second process gas G2 upward. The second process gas G2 supplied upward through the supply port 882b is guided to the second injection unit 846 by restricting the flow by the upper wall and the partition wall 848 of the second head 840. .

The inlet pipe 884 connects the gas supply unit 200 and the supply pipe 882 to introduce the second process gas G2 supplied from the gas supply unit 200 into the supply pipe 882. The inflow pipe 884 flows the inflow body 884a for introducing the second process gas G2 into the supply pipe 882 and the second process gas G2 from the gas supply unit 200 into the inflow body 884a. Inlet 884b to be included.

In one embodiment of the present invention, the inlet pipe 884 is formed to extend in parallel to the supply pipe (882). To this end, the feed duct 882 is not a complete circular tube but has an opening region through which the inlet 884 passes so that each inlet 884 can extend in parallel. That is, the supply pipe 882 has a hook shape in which a part of the opening is opened.

On the other hand, although not shown in the present invention, the inlet pipe 884 is formed extending in the transverse direction with respect to the supply pipe (882). At this time, the supply pipe 882 is composed of a closed loop of the circular pipe because the inlet pipe 884 extends in the horizontal direction, that is, vertically.

With this configuration, the operation of the chemical vapor deposition apparatus 10 according to the first and second embodiments of the present invention will be described below.

First, in order to deposit a crystal layer on the substrate 1, the substrate 1, which is a plurality of deposition objects, is disposed in the susceptor 300 inside the chamber 100. Then, the gas supply unit 200 is operated to supply the process gas into the chamber 100.

At this time, the process gas supplied from the gas supply unit 200 is injected into the chamber 100 via the showerhead assembly 800. The first process gas G1 supplied from the gas supply unit 200 is supplied to the first supply chamber 824 of the first head 820 through the first head supply pipe 828. Then, the first process gas G1 supplied to the first supply chamber 824 is injected into the chamber 100 through the first injection unit 826.

On the other hand, the second process gas (G2) supplied from the gas supply unit 200 is introduced into each supply pipe 882 through the inlet pipe 884 of the plurality of gas supply unit 880. The gas supply units 880 have concentric circles and are spaced apart from the second supply chamber 844 of the second head 840 at a predetermined interval. The second process gas G2 supplied from the plurality of gas supply units 880 is supplied at a constant flow rate to the entire inner space of the second supply chamber 844. The second process gas G2 supplied to the second supply chamber 844 is injected into the chamber 100 through the second injection unit 846.

The waste gas G3 generated after the reaction of the process gas and the substrate 1 in the chamber 100 is exhausted to the outside through the exhaust port 140 of the chamber 100.

Accordingly, the plurality of gas supply units may be spaced apart at regular intervals from one of the first head and the second head so that the process gas may be uniformly supplied to the internal space in which the gas supply unit is disposed. Flow rate and doping rate can be adjusted.

In addition, since the plurality of gas supply units may be spaced apart at regular intervals with concentric circles to make the injection speed and the injection amount of the process gas injected into the chamber constant, the crystal layer deposition on the substrate may be uniform.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

10: chemical vapor deposition apparatus 100: chamber
200: gas supply unit 300: susceptor
400: rotating shaft 500: heating unit
600: liner 800: showerhead assembly
820: first head 824: first supply chamber
826: first injection unit 828: first head supply pipe
840: second head 844: second supply chamber
846: second injection unit 880: gas supply unit
882: supply pipe 84: inlet pipe

Claims (9)

A first head having a first jetting portion for jetting a first process gas;
A second head stacked on the first head and having a second injection part for injecting a second process gas different from the first process gas;
One of the first head and the second head has a concentric circle in the transverse direction with respect to the injection direction of the first process gas and the second process gas and is spaced apart at regular intervals, the first head and the second head Shower head assembly comprising a plurality of gas supply for supplying a corresponding process gas of the first process gas and the second process gas to any one of the head. delete The method of claim 1,
Each of the plurality of gas supply units,
A supply pipe for supplying a corresponding process gas of the first process gas and the second process gas to any one of the first head and the second head;
And an inlet pipe extending from the supply pipe and introducing a corresponding process gas from the first process gas and the second process gas into the supply pipe. The method of claim 3,
The inlet pipe is formed to extend in parallel to the supply pipe,
The supply pipe is a showerhead assembly, characterized in that the hook-shaped opening formed so that the inlet pipe passes. The method of claim 3,
The first head and the second head further comprises a partition wall for partitioning any one of the inner space in which the plurality of gas supply unit is disposed,
And the partition wall partitions between the supply pipes of each of the plurality of gas supply parts arranged concentrically. The method of claim 5,
The supply pipe includes a supply port formed to supply the process gas in the radial direction,
The process gas supplied through the supply port is restricted in flow by the partition wall, and the process gas in which flow is restricted by the partition wall is any one of the first injection part and the second injection part of the space in which the supply pipe is disposed. And guided to a showerhead assembly. The method of claim 5,
The supply pipe may include a supply port upwardly configured to inject a process gas into an upper wall of any one of the first head and the second head in which the supply pipe is accommodated.
The process gas supplied through the supply port is restricted in flow by the partition wall and the upper side wall, and the process gas in which the flow is restricted by the partition wall and the upper wall is connected to the first injection part of the space in which the supply pipe is disposed. Shower head assembly, characterized in that guided to any one of the second injection. A chamber;
A susceptor disposed in the chamber and supporting the substrate;
A showerhead assembly according to any one of claims 1 and 3 arranged in the chamber;
And a gas supply unit connected to the shower head assembly and supplying the first process gas and the second process gas to the shower head assembly. 9. The method of claim 8,
The corresponding process gas of the first process gas and the second process gas into the chamber through the injection unit corresponding to the position of the gas supply unit disposed in any one of the first head and the second head. Chemical vapor deposition apparatus, characterized in that for spraying.

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