KR101346921B1 - A flat display device and method of manufacturing the same - Google Patents

A flat display device and method of manufacturing the same Download PDF

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Publication number
KR101346921B1
KR101346921B1 KR1020080014899A KR20080014899A KR101346921B1 KR 101346921 B1 KR101346921 B1 KR 101346921B1 KR 1020080014899 A KR1020080014899 A KR 1020080014899A KR 20080014899 A KR20080014899 A KR 20080014899A KR 101346921 B1 KR101346921 B1 KR 101346921B1
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electrode
region
formed
pixel
gate
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KR1020080014899A
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Korean (ko)
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KR20090089630A (en
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박성진
이재구
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엘지디스플레이 주식회사
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    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
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    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306Details
    • G02F1/1309Repairing; Testing
    • GPHYSICS
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    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • GPHYSICS
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    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136204Arrangements to prevent high voltage or static electricity failures
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1675Constructional details
    • G02F1/1679Gaskets; Spacers; Sealing of cells; Filling or closing of cells
    • G02F1/1681Gaskets; Spacers; Sealing of cells; Filling or closing of cells having two or more microcells partitioned by walls, e.g. of microcup type
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F2001/133388Constructional difference between the display region and the peripheral region
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F2001/13606Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F2001/136231Active matrix addressed cells for reducing the number of lithographic steps
    • G02F2001/136236Active matrix addressed cells for reducing the number of lithographic steps using a gray or half tone lithographic process
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50Protective arrangements
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/36Micro- or nanomaterials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Abstract

According to an aspect of the present invention, there is provided a flat panel display including: a substrate in which an active region and a peripheral region are divided; Gate wiring and data wiring intersecting on the active region to define a pixel region; A thin film transistor disposed at a crossing region of the gate wiring and the data wiring; A first common electrode disposed in the pixel area; A storage electrode disposed on the first common electrode to form a storage capacitance; A pixel electrode electrically connected to the storage electrode and disposed to cover the pixel area, the data line, and the gate line; And an ink film formed on the pixel electrode to cover an active region and a peripheral region, and including an ink layer having microcapsules provided with different types of charged particles therein to display a white image and a black image. .
Display device, ink layer, pixel electrode, common electrode, dummy

Description

Flat display device and manufacturing method thereof {A FLAT DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to a flat panel display and a manufacturing method thereof.

In general, a flat panel display converts data having an electrical format processed by an information processing apparatus that processes information into an image.

Typical flat panel display devices include liquid crystal display devices, organic electroluminescence display devices, plasma display panels, and electrophoretic devices.

A liquid crystal display displays an image using liquid crystal, an organic electroluminescent display displays an image using an organic light emitting layer, a plasma display panel displays an image using plasma, and an electrophoretic device reflects light or The image is displayed by using the charged particles to absorb.

Among them, the conventional electrophoretic apparatus includes a substrate, a pixel electrode, an ink layer, and a common electrode. The pixel electrode is disposed in a matrix form on the substrate, and the ink layer is attached to the pixel electrode in the form of a film. The ink layer includes charged particles having nano size. The charged particles include black charged particles or white charged particles. The common electrode is disposed on the ink layer.

However, in recent years, large capacitance and high resolution of the electrophoretic device have been required to secure large capacitance in each pixel region. In addition, the demand for improving the screen quality of the electrophoretic device is increasing.

The present invention extends the pixel electrodes disposed in each pixel region of the flat panel display device to cover both the data wiring and the gate wiring arranged in the pixel region, thereby ensuring capacitance in each pixel region and increasing reflectance to improve image quality. Another object is to provide an improved flat panel display and a method of manufacturing the same.

In addition, an object of the present invention is to provide a flat panel display device and a method of manufacturing the same that can arrange the electrodes in the peripheral region of the flat panel display device to improve the defect of the assembly process of the flat panel display device and the case.

According to an aspect of the present invention, there is provided a flat panel display device comprising: a substrate in which an active region and a peripheral region are divided; Gate wiring and data wiring intersecting on the active region to define a pixel region; A thin film transistor disposed at a crossing region of the gate wiring and the data wiring; A first common electrode disposed in the pixel area; A storage electrode disposed on the first common electrode to form a storage capacitance; A pixel electrode electrically connected to the storage electrode and disposed to cover the pixel area, the data line, and the gate line; And an ink film formed on the pixel electrode to cover an active region and a peripheral region, and including an ink layer having microcapsules provided with different types of charged particles therein to display a white image and a black image. .

Also, a method of manufacturing a flat panel display device according to another exemplary embodiment of the present invention may include providing a substrate partitioned into an active region, a peripheral region, and a pad region; Forming a metal film on the substrate, and then forming a gate electrode, a common electrode, a gate wiring, a common wiring, and a gate pad using a photolithography method including a mask; A gate insulating film, an amorphous silicon layer, a doped amorphous silicon layer, and a metal layer are successively formed on the substrate on which the gate electrode is formed, and then, in the thin film transistor region using a photolithography method including a diffraction mask or a halftone mask. Forming channel layers and source / drain electrodes, storage electrodes, data wires, and data pads; Sequentially forming a first passivation layer, a dielectric layer, and a second passivation layer on the substrate on which the source / drain electrodes are formed, and then removing the dielectric layer on the gate pad and data pad region while forming contact holes in the storage electrode region. ; Forming a transparent conductive material on the substrate on which the contact hole is formed, and then forming a pixel electrode using a photolithography method including a mask; And forming an ink film on the pixel electrode.

As described in detail above, the present invention extends the pixel electrode disposed in each pixel region of the flat panel display device and covers both the data wiring and the gate wiring arranged in the pixel region to reduce capacitance in each pixel region. It has the effect of improving the image quality by securing and increasing the reflectance.

In addition, the present invention has the effect of improving the failure of the assembly process of the flat panel display and the case by placing the electrode in the peripheral area of the flat panel display.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. First, it should be noted that the same components or parts in the drawings represent the same reference numerals as much as possible. In describing the embodiments, specific descriptions of related known functions or configurations are omitted in order to avoid obscuring the gist of the present invention.

Also, in the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on / above / over / upper" (film), region, pad, pattern or structure is directly formed on the substrate, each layer (film), region, pad, or substrate, May be interpreted as being formed in contact with the patterns and may be interpreted as the case where another layer (film), another region, another pad, another pattern or other structure is additionally formed therebetween. Therefore, the meaning should be judged by the technical idea of the invention.

Flat panel display

1A is a plan view of a flat panel display according to an exemplary embodiment of the present invention, and FIG. 1B is an enlarged view of region A of FIG. 1A.

Referring to FIGS. 1A and 1B, a flat display device 100 driven by an electrophoretic method may be classified into an active region (AR), a peripheral region (PR), and a gate pad region (Gate). Pad Region: GPR) and Data Pad Region (DPR). Although not shown, GP is a gate pad, and DP is a data pad.

Referring to FIG. 1B, the active region PR and the peripheral region PR are divided into a plurality of pixel regions in the active region and the peripheral region, and a common electrode, a storage electrode, and a pixel electrode are formed in each pixel region. It is. In addition, the data lines DL1, DL2... DLn and the gate lines GL1, GL2,... Are extended to the outside of the peripheral area PR. The gate lines GL1, GL2, An antistatic circuit ESD is formed in the edge region of the .... GLn) and the data lines DL1, ... DLn, respectively. The antistatic circuits are all commonly connected to an antistatic circuit line (ESD Line). In addition, common wirings Vcom1, Vcom2, .. Vcomn are formed to be expanded between the gate lines GL1, GL2, .. GLn, and all of them are commonly connected by Vcom supply lines.

The active area is an area in which a data signal is supplied to each pixel area through data lines DL1, DL2, .. DLn to display an image, and the peripheral area PR is a data line DL1, DL2,. DLn) provides a data signal continuously for a certain period of time to achieve a specific brightness, for example, a brightness that can be most naturally harmonized with a case (not shown in the figure) that houses and protects a flat panel display. For example, the specific luminance may be any one of black, white, and gray luminance. When the peripheral area PR of the flat panel display device is exposed from the case in the assembling process of the flat panel display device and the case, the peripheral area may enter the user's field of view in addition to the image desired by the user. The area PR is intended to improve the assembly failure of the flat panel display and the case by implementing a specific brightness that is the same as or similar to that of the case. In other words, the peripheral region may continuously perform a specific luminance, and thus may serve as an outer black matrix of a general liquid crystal display device that may improve assembly failure of the case.

In addition, as shown in the figure, pixel electrodes are individually formed in each pixel region in the active region, but dummy pixel electrodes are integrally formed along the periphery of the active region in the peripheral region (see FIG. 2).

In addition, as illustrated in FIG. 1B, in the present invention, an antistatic circuit ESD is disposed in the data lines DL1, DL2, .. DLn and the gate lines GL1, GL2, .. GLn, but in common. The antistatic circuit was not disposed on the wirings Vcom1, Vcom2, ... Vcomn. This is because when the antistatic circuits are disposed and connected to each other in a closed loop form through a common supply line, a problem occurs that the voltage level supplied to the common lines drops or is distorted.

Therefore, in the present invention, an antistatic circuit is disposed on each of the data lines DL1, DL2, .. DLn and the gate lines GL1, GL2, .. GLn, and connected to each other by a closed loop. However, the common wirings Vcom1, Vcom2,... Vcomn are formed without a static electricity protection circuit and have a connection structure in which a common supply line is opened.

FIG. 2 is a plan view illustrating pixel structures of an active region and a peripheral region of the flat panel display according to the present invention, and FIG. 3 is a cross-sectional view taken along line II ′ of FIG. 2.

As shown in FIGS. 2 and 3, a plurality of pixel regions are defined in the active region AR. As illustrated in FIG. 2, the gate wiring 101 and the data wiring 103 cross each other. Arranged to define the unit pixel area. In addition, a thin film transistor (TFT), which is a switching element, is disposed in an intersection region of the gate wiring 101 and the data wiring 103, and the first common electrode 108a and the thin film transistor are disposed in the pixel region. The storage electrode 120a and the pixel electrode 150 formed to extend from the drain electrode 120 of the plurality overlap with each other. The first common electrode 108a is branched from the common wiring 108 parallel to the gate wiring 101 and disposed across the pixel area.

The common wiring 108 has a structure in which the wiring width thereof becomes narrow in an area crossing the data wiring 103, which prevents the data wiring 103 crossing the common wiring 108 from being disconnected. To do this. In addition, a predetermined protrusion is formed in a region of the gate wiring 101 that intersects the data wiring 103 to prevent the data wiring 103 from being disconnected when formed on the gate wiring 101. As shown in FIG. 4A, it can be seen that a predetermined protrusion is formed in a lower direction facing the gate electrode 111.

In particular, a flat panel display driven by an electrophoretic method needs to maintain a single image frame for a long time, so that a storage capacitance value in a pixel area must be large. Therefore, the first common electrode 108a and the storage electrode 120a are extended to secure storage capacitance in the pixel area. That is, the storage electrode 120a and the first common electrode 108a are formed to cover most of the pixel area.

In addition, the flat panel display driven by the electrophoretic method has a higher driving voltage than other flat panel displays, and thus it is necessary to form a thin film transistor TFT. That is, in order to operate at a high driving voltage, the channel width W of the thin film transistor should be wide and the channel length L should be long (dashed line display in the TFT region). Accordingly, in the flat panel display device driven by the electrophoresis method, when the LCD is formed so as not to overlap with the thin film transistor as in the conventional liquid crystal display device, the screen quality may be degraded due to the decrease in reflectance. However, in the conventional liquid crystal display device, when the pixel electrode is formed to overlap the thin film transistor, there is a problem that the abnormal driving of the liquid crystal is caused by the channel of the thin film transistor and the voltage of the pixel electrode, thereby affecting the image quality. . This abnormal driving problem also occurs in a flat panel display driven by an electrophoretic method.

In addition, when the pixel electrode is present only inside the gate line and the data line, as in the pixel area of the conventional liquid crystal display device, the flatness of the flat panel display device driven by the electrophoresis method reduces the screen quality. As a result, when the pixel electrode is formed to cover both the data wiring and the gate wiring, the parasitic capacitances Cgs and Cgd are increased in size so that the data signal is greatly distorted by the parasitic capacitance, which is a kick back voltage. It acts as a factor to increase. As described above, when the kickback voltage is increased, the image quality of the flat panel display is degraded.

In order to solve this problem, the electrophoretic flat panel display of the present invention extends the pixel electrode to at least one of the thin film transistor, the gate wiring and the data wiring, and the pixel electrode, the thin film transistor, the gate wiring and the data wiring. The quality of the image quality is minimized through the dielectric layer 141 therebetween, and at the same time, the reflectance is improved.

In addition, by extending the pixel electrode 150 as in the present invention, the reflectance in the pixel region is increased and the size of the storage capacitance is increased to maintain one image frame for a long time.

In the dummy pixel area of the peripheral area, the gate line 101 and the dummy data line 123 intersecting with the gate line 101 define a dummy pixel area. Each dummy pixel area is electrically connected to the dummy storage electrode 130 and the dummy storage electrode 130 which are branched from the dummy common electrode 108b and the dummy data line 123 and overlap the dummy common electrode 108b. The dummy pixel electrode 160 is formed to cover the entire dummy pixel area of the peripheral area. The dummy pixel electrode 160 extends along the peripheral area of FIG. 1 to form a single electrode.

The dummy storage electrode 130 has a structure drawn out from the two connection parts from the dummy data line 123, but this is not limited thereto and may be connected to one lead part as shown in FIG. 6.

Referring to FIG. 3, when the image signal is supplied to the pixel region through the data line 103 in the active region AR, the second common electrode 170b of the pixel electrode 150 and the ink film 170 is provided. An electric field is formed between The electric field formed between the pixel electrode 150 and the second common electrode 170b moves the charged particles included in the microcapsule of the ink layer 170a to realize a black or white image.

In addition, an image signal capable of realizing any color of white, black, or gray is selectively supplied to the peripheral region PR through the dummy data line 123 so that the dummy pixel electrode 160 and the ink film may be provided. An electric field applied to the ink layer 170a is formed between the second common electrode 170b of the 170. Then, the single color of any one of white, black, or gray is implemented in the peripheral area, thereby improving the assembly failure of the flat panel display and the case.

The dummy common electrode 108b is branched from the common wiring 108. In addition, 210a, which is not illustrated but illustrated in the drawing, is a first contact hole for electrically connecting the pixel electrode 150 and the storage electrode 120a, and 210b is a portion of the dummy pixel electrode 160 and the dummy storage electrode 130. It is a second contact hole for electrically connecting.

Although the drawings show that the first and second contact holes 210a and 210b are each formed in two, the present invention is not limited thereto and may be formed in one or two or more.

Referring to FIG. 2, the gate electrode 111 branching from the gate wiring 101 to the pixel region and the first common electrode branching from the common wiring 108 are formed on the substrate 200. 108a) is formed. A gate insulating layer 102 is formed on the substrate 200 on which the gate electrode 111 and the first common electrode 108a are formed, and a thin film transistor TFT is formed on the gate insulating layer 102 corresponding to the gate electrode 111. Channel layer 114 is formed. A data line 103, a source electrode 119 branching from the data line 103, and a drain electrode 120 facing the source electrode 119 are formed on the channel layer 114. In the pixel region, the storage electrode 120a that is formed integrally with the drain electrode 120 and is formed on the gate insulating layer 102 corresponding to the first common electrode 108a is formed to form the first common electrode 108a. Overlap. The function of the first common electrode 108a is to ensure storage capacitance between the storage electrode 120a and the storage electrode 120a.

In addition, a first passivation layer 140 is formed on the substrate 200 on which the source / drain electrodes 119 and 120 are formed, and a dielectric layer 141 and a second passivation layer 142 are formed on the first passivation layer 140. have. The dielectric layer 141 may be an organic film such as photoacryl, but in some cases, an inorganic film or a photoresist may be used. The pixel electrode 150 is formed on the second passivation layer 142, and the pixel electrode 150 is electrically connected to the storage electrode 120a formed under the first contact hole 210a. Similarly, the dummy pixel electrode 160 in the peripheral area is also electrically connected to the dummy storage electrode 130 through the second contact hole 210b.

An ink film 170 is attached to the pixel electrode 150, and the ink film 170 may include a protective film protecting the ink layer 170a and the ink layer 170a in contact with the pixel electrode 150. 170c) and the second common electrode 170b disposed between the protective film 170c and the ink layer 170a. The ink layer 170a includes microcapsules including different types of charged particles, and drives charged particles by an electric field to reflect external light to absorb white light or external light to realize a black state.

In the present invention, a dielectric layer 141 and a second passivation layer 142 are formed between the pixel electrode 150 and the first passivation layer 140 to form at least one of the pixel electrode 150, the gate line 101, and the data line 103. The parasitic capacitance that can occur between any one is minimized. That is, the dielectric layer 141 serves to reduce parasitic capacitance by controlling the distance and dielectric constant between the pixel electrode 150 and the storage electrode 120a.

In addition, the first passivation layer 140 may prevent the electrodes and the data line 103 of the thin film transistor from directly contacting and damaging the dielectric layer 141. The second passivation layer 142 may prevent the pixel electrode 150 from forming a dielectric layer. This is to prevent direct contact with 141 and damage. In particular, in the case where the dielectric layer 141 is an organic film, a protective film is formed on the upper and lower layers of the dielectric layer 141 to prevent the metal electrode which is in direct contact with the dielectric layer 141 due to the outgas generated from the organic film. It was.

Accordingly, in the present invention, the pixel electrode 150 in the active region is extended to improve reflectance, thereby improving image quality, and further securing storage capacitance in the unit pixel region.

Manufacturing method of flat panel display

4A to 4D illustrate a method of manufacturing a flat panel display according to another exemplary embodiment of the present invention.

The manufacturing method of FIGS. 4A to 4D will be described with reference to FIG. 3.

As shown in FIG. 4A, the gate wiring 101, the gate electrode 111, the common wiring 108, and the first common electrode are disposed on the substrate 200 in which the active region AR and the peripheral region PR are partitioned. 108a and the dummy common electrode 108b are formed. The gate wiring 101 and the common wiring 108 may include copper, chromium, chromium alloys, molybdenum, alloys thereof, and the like. The wiring and electrode formation method is formed using a photolithography method including a mask and an etching process. In the present embodiment, the common wiring 108 and the gate wiring 101 extend to not only an active region but also a peripheral region.

In addition, the common wiring 108 is formed so that the wiring width becomes narrow in a region crossing the data wiring when the common wiring 108 is crossed from the pixel region to the adjacent pixel region. This is to prevent the data wiring from being disconnected due to the step when the data wiring is formed with the gate insulating film interposed therebetween.

In addition, a predetermined protrusion is formed in the gate wiring 101 in a direction opposite to the gate electrode 111 to prevent the data wiring from being disconnected due to a step when the data wiring is subsequently formed. In addition, the gate electrode 111 has predetermined grooves formed in an area where the drain electrode and the source electrode cross each other, thereby preventing the electrode from being disconnected by the step when forming the source electrode and the drain electrode.

When the gate wiring 101 or the like is formed on the substrate 200 as described above, the gate insulating layer 102 is formed on the entire region of the substrate 200. The gate insulating layer 102 may use a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.

When the gate wiring 101, the common wiring 108, and the like are formed on the substrate 200 as described above, as shown in FIG. 4B, in the active region, the channel layer 114 and the source are formed on the gate electrode 111. Drain electrodes 119 and 120, storage electrode 120a and data line 103 are formed. In this case, the channel layer 114, the source / drain electrodes 119 and 120, and the data line 103 are simultaneously formed using a diffraction mask or a halftone mask.

In this case, the dummy data line 123 and the dummy storage electrode 130 branching from the dummy data line 123 are also formed in the peripheral area.

In addition, the channel layer 114 may include an amorphous silicon film and an n + amorphous silicon film heavily doped with a conductive impurity such as phosphorus (P). In the present invention, in order to secure the width and length of the channel layer 114 (dotted line), the source electrode 119 is formed of three electrode structures, and the corresponding drain electrode 120 is formed of two electrode structures. It is. Therefore, as shown in FIG. 4B, the source electrode 119 and the drain electrode 120 are formed in a double structure in which the electrodes are engaged with each other. A dotted line channel layer 114 is formed between the electrodes. The length and width of the channel layer 114 are much larger than the channel layer of the conventional thin film transistor.

When the source / drain electrodes 119 and 120 and the data line 103 are formed on the substrate 200 as described above, as illustrated in FIG. 4C, the first passivation layer 140 may be formed on all regions of the substrate 200. After the dielectric layer 141 and the second passivation layer 142 are sequentially formed, first and second contact holes 210a and 210b are formed on the storage electrode 120a and the dummy storage electrode 130 by applying a mask process. To form. The first passivation layer 140 and the second passivation layer 142 may include an inorganic material, such as an oxide or a nitride, and may use an organic material.

In addition, although the organic layer is preferably used as the dielectric layer 141, an inorganic material or a photoresist may be used.

When the first and second contact holes 210a and 210b are formed as described above, as shown in FIG. 4D, indium tin oxide (ITO), which is transparent and conductive in the entire region of the substrate 200, One of Indium Zinc Oxide (IZO) and Amorphous Indium Tin Oxide (a-ITO) is formed.

Then, the mask process is performed to form the pixel electrode 150 in the pixel region of the active region, and the dummy pixel electrode 160 in the peripheral region.

In this case, the pixel electrode 150 is extended to cover the data line 103, the gate line 101, and the thin film transistor TFT that partition the pixel area.

The dummy pixel electrode 160 in the peripheral area is formed in an integrated electrode structure along the entire circumference of the peripheral area. In addition, although not shown in the drawings, only the black or white data signal is supplied to the peripheral area through the dummy data wire 123 to improve the assembly failure of the flat panel display and the case.

5A to 5D illustrate a method of manufacturing a flat panel display device according to the present invention. The fabrication process region is a thin film transistor region (TFT), a storage capacitance region (Storage Cap), a gate pad (GP in FIG. 1A) and a data pad (DP in FIG. 1A) in the pixel region.

Referring to FIG. 2, the manufacturing method of FIGS. 5A to 5D will be formed of copper, chromium, chromium alloy, molybdenum, and alloys thereof, etc. on the substrate 200, and then a photo including a mask. The photoresist is patterned using the lithography method. A wet etching process is performed using the patterned photoresist as a mask to form a gate electrode 111 on the substrate 200, a first common electrode 108a, a gate wiring 101, a common wiring 108, and a pixel region in the pixel region. The gate pad 190 is formed. The gate pad 190 is formed by extending the gate wiring 101 to the pad region of FIG. 1.

When the gate electrode 111 is formed on the substrate 200 as described above, as shown in FIG. 5B, the gate insulating layer 102 is formed on the entire region of the substrate 200. The gate insulating layer 102 may use a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.

Then, an amorphous silicon layer, a doped (n +, p +) amorphous silicon layer, and a metal layer are subsequently formed on the gate insulating film 102. Then, patterning is performed using a photolithography method including a diffraction mask or a halftone mask, and then the wet and dry etching processes are repeatedly used to form the channel layer 114 on the gate electrode 111 of the thin film transistor. Source / drain electrodes 119 and 120 and data lines 103 are formed. The storage electrode 120a is formed integrally with the drain electrode 120 and extends in the pixel area in the storage capacitance area.

In this case, a semiconductor layer 114a is present between the data pad 191, the data pad 191, and the gate insulating layer 102 in the data pad region.

As described above, when the source / drain electrodes 119 and 120 and the data line 103 are formed on the substrate 200, as shown in FIG. 5C, the first passivation layer 140 may be formed on the substrate 200. The dielectric layer 141 and the second passivation layer 142 are sequentially formed. Then, the first contact hole 210a is formed on the storage electrode 120a by using a photolithography method including a mask. In this case, the dielectric layer 141 is removed from the gate pad and the data pad region so that the first passivation layer 140 and the second passivation layer 142 are stacked on the gate insulating layer 102. In this case, the gate pad 190 and the data pad 191 are exposed by the first contact hole process. That is, in a specific process, the first passivation layer 140 is first formed on the entire area of the substrate 200, and then the dielectric layer 141 is laminated on the entire area of the substrate 200. At this time, a process of forming the first contact hole in the dielectric layer 141 is performed, and at this time, all of the dielectric layer 141 in the pad region is removed. Thereafter, the second passivation layer 142 is formed on the substrate 200, and then a first contact hole process is performed.

The first passivation layer 140 and the second passivation layer 142 may include an inorganic material, such as an oxide or a nitride, and may use an organic material. In addition, although the organic layer is preferably used as the dielectric layer 141, an inorganic material or a photoresist may be used.

When the first contact hole 210a is formed as described above, as shown in FIG. 5D, indium tin oxide (ITO) and zinc indium oxide (Indium Tin Oxide) that are transparent and conductive in all regions of the substrate 200. Zinc Oxide (IZO) and amorphous Indium Tin Oxide (a-ITO).

Then, a mask process is performed to form the pixel electrode 150 in the pixel region of the active region, and to form the gate pad electrode 250 and the data pad electrode 260 on the data pad 191 on the gate pad 190. do.

In this case, the pixel electrode 150 is extended to cover the data line 103, the gate line 101, and the thin film transistor TFT that partition the pixel region (see FIG. 2).

Referring to FIG. 2, the dummy pixel electrode 160 in the peripheral area is formed as an integrated electrode structure along the entire circumference of the peripheral area. Although not shown in the drawings, only the black or white data signal may be supplied to the peripheral area through the dummy data line 123 to improve assembly failure of the flat display device and the case.

6 is a plan view of a flat panel display device according to still another embodiment of the present invention.

The same reference numerals as the reference numerals of FIG. 2 refer to the same components.

As illustrated in FIG. 6, a thin film transistor TFT having a pixel structure of a flat panel display device according to another exemplary embodiment includes two first and second gate electrodes 211a and 211b.

The thin film transistor may include a source electrode 219 branching from the data line 103, a connection electrode 218 disposed between the first gate electrode 211a and the second gate electrode 211b, and the second electrode. A drain electrode 220 connected to the storage electrode 220a in the pixel area while partially overlapping the two gate electrode 211b is provided.

The storage electrode 220a is integrally formed with the drain electrode 220, a first common electrode 108a is disposed below the pixel electrode 150, and a pixel electrode 150 is disposed above the storage electrode 220a. The pixel electrode 150 is extended to cover both the data line 103 and the gate line 101 which define a pixel area. The functions and effects are the same as the functions and effects described with reference to FIG.

Therefore, when a driving signal is supplied through the gate wiring 101, a driving voltage is supplied to the first and second gate electrodes 211a and 211b of the thin film transistor, thereby turning on the data wiring 103. The data signal supplied through the source electrode 219, the connection electrode 218, the drain electrode 220, and the storage electrode 220a are sequentially supplied to supply the data signal to the pixel electrode 150.

When the data signal is supplied to the pixel electrode 150 as described above, an electric field is formed between the pixel electrode 150 and the second common electrode 170b formed on the ink layer 170a, as shown in FIGS. 2 and 3. The charged particles contained in the microcapsules 170a are operated.

The thin film transistor having the above structure can improve the operating characteristics by distributing the load of the transistor with respect to a high driving voltage.

1A is a plan view of a flat panel display according to an exemplary embodiment of the present invention.

FIG. 1B is an enlarged view of region A of FIG. 1A.

2 is a plan view illustrating a pixel structure of an active area and a peripheral area of a flat panel display device according to an exemplary embodiment of the present invention.

3 is a cross-sectional view taken along the line II ′ of FIG. 2.

4A to 4D illustrate a method of manufacturing a flat panel display according to another exemplary embodiment of the present invention.

5A to 5D illustrate a method of manufacturing a flat panel display device according to the present invention.

6 is a plan view of a flat panel display device according to still another embodiment of the present invention.

Description of the Related Art [0002]

100: flat panel display 101: gate wiring

103: data wiring 108: common wiring

108a: first common electrode 108b: dummy common electrode

119 source electrode 120 drain electrode

150: pixel electrode 160: dummy pixel electrode

Claims (15)

  1. A substrate in which an active region and a peripheral region are divided;
    Gate wiring and data wiring intersecting on the active region to define a pixel region;
    A thin film transistor disposed at a crossing region of the gate wiring and the data wiring;
    A first common electrode formed in parallel with the gate wiring and branched from the common wiring disposed across the pixel area;
    A storage electrode disposed on the first common electrode to form a storage capacitance;
    A pixel electrode electrically connected to the storage electrode and disposed to cover the pixel area, the data line, and the gate line; And
    An ink film formed on the pixel electrode to cover an active region and a peripheral region, and including an ink layer having a microcapsule provided with different types of charged particles therein to display a white image and a black image,
    And a source electrode of the thin film transistor is formed of three electrode structures, and the drain electrode is formed of two electrode structures so as to be engaged with the three electrodes of the source electrode.
  2. The method of claim 1, wherein the peripheral region,
    A gate line and a dummy data line intersected to define a dummy pixel area;
    A dummy common electrode disposed in the dummy pixel area;
    A dummy storage electrode overlapping the dummy common electrode and branching from the dummy data line; And
    And a dummy pixel electrode in electrical contact with the dummy storage electrode and integrally formed along the entire circumference of the peripheral area.
  3. The flat panel display of claim 1, wherein a dielectric layer is disposed between the pixel electrode and the storage electrode.
  4. The flat panel display of claim 3, wherein first and second passivation layers are formed on upper and lower layers of the dielectric layer, respectively.
  5. The flat panel display of claim 3, wherein the dielectric layer is an organic layer.
  6. The flat panel display of claim 1, wherein the pixel electrode extends to cover the gate line, the data line, and the entire region of the thin film transistor.
  7. The flat panel display of claim 1, wherein the ink film further comprises a second common electrode.
  8. delete
  9. The flat panel display of claim 1, wherein the channel layer of the thin film transistor is formed between three electrodes of the source electrode and two electrodes of the drain electrode.
  10. The flat panel display of claim 1, further comprising a common line parallel to the gate line and disposed across the pixel area.
  11. The flat panel display of claim 10, wherein the common line is formed to be narrower than a width of the pixel area in an area intersecting the data line disposed between the pixel areas.
  12. Providing a substrate partitioned into an active region, a peripheral region, and a pad region;
    Forming a metal film on the substrate, and then forming a gate electrode, a common electrode, a gate wiring, a common wiring, and a gate pad using a photolithography method including a mask;
    A gate insulating film, an amorphous silicon layer, a doped amorphous silicon layer, and a metal layer are successively formed on the substrate on which the gate electrode is formed, and then, in the thin film transistor region using a photolithography method including a diffraction mask or a halftone mask. Forming channel layers and source / drain electrodes, storage electrodes, data wires, and data pads;
    Sequentially forming a first passivation layer, a dielectric layer, and a second passivation layer on the substrate on which the source / drain electrodes are formed, and then removing the dielectric layer on the gate pad and data pad region while forming contact holes in the storage electrode region. ;
    Forming a transparent conductive material on the substrate on which the contact hole is formed, and then forming a pixel electrode, a gate pad electrode, and a data pad electrode using a photolithography method including a mask; And
    Forming an ink film on the pixel electrode; Including,
    The source electrode of the thin film transistor is formed of a three-electrode structure, the drain electrode is a flat panel display device, characterized in that formed with two electrode structure to be arranged in engagement with the three electrodes of the source electrode.
  13. The method of claim 12, wherein the contact hole forming process,
    Forming a first passivation layer and a dielectric layer on the substrate, and then removing a portion of the dielectric layer from the storage electrode region to form a contact hole, wherein the dielectric layers of the gate pad region and the data pad region are removed; And
    Forming a contact hole in the dielectric layer, forming a second passivation layer on the substrate, and forming a contact hole in the storage electrode, the gate pad, and the data pad area. Way.
  14. The method of claim 12, wherein the pixel electrode is electrically connected to the storage electrode through a contact hole.
  15. The method of claim 12, wherein a first passivation layer, a dielectric layer, and a second passivation layer are stacked between the pixel electrode and the storage electrode.
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TW097131836A TWI413842B (en) 2008-02-19 2008-08-20 Flat display device and method for manufacturing the same
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US12/318,519 US8148181B2 (en) 2008-02-19 2008-12-30 Method for manufacturing flat display device
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US8148181B2 (en) 2012-04-03
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CN101515102A (en) 2009-08-26

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