KR101328512B1 - Wafer pattern inspection apparatus and method - Google Patents

Abstract

A wafer pattern inspection apparatus is disclosed. The disclosed wafer pattern inspection apparatus includes a main chamber; A subchamber for guiding the wafer after the pattern and etching process into the main chamber; A pattern inspection unit installed in the main chamber and inspecting a pattern formed on the wafer; And a controller configured to analyze the pattern based on the measured value of the pattern inspector, wherein the pattern inspector comprises: a first inspector configured to measure a plane length or a planar area of the wafer pattern; and a slope length of the wafer pattern; It is characterized by consisting of a second inspection unit.

Description

Wafer Pattern Inspection System and Inspection Method {WAFER PATTERN INSPECTION APPARATUS AND METHOD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer inspection apparatus and an inspection method, and more particularly, to an apparatus for inspecting a pattern of a wafer using a scanning electron microscope (SEM) and an inspection method thereof.

LEDs have recently been used in lighting as well as automotive components, TV backlight units and even agricultural lighting. In the case of this LED substrate, an LED chip is epitaxially grown on a substrate such as a patterned sapphire substrate (PSS).

The sapphire processed substrate undergoes a patterning process and an etching process for processing irregularities on the surface of the wafer during the epitaxial growth process (hereinafter referred to as an epitaxial process), where the precision of patterning determines the light extraction efficiency. .

After the etching process, the wafer is subjected to an epi-process. If a defective wafer is inserted in the epi-process, the quality of the LED substrate is generated. Therefore, the wafer pattern formed in the etching process is inspected before the epi-process. .

In such a conventional wafer pattern inspection, a portion of a plurality of wafers are sampled and each wafer is cut, and a tester performs a fracture inspection in which the inspector visually checks the cross section.

However, as the conventional wafer pattern inspection is performed by the fracture inspection, it takes a lot of inspection time, and since the inspection is performed by the naked eye of the inspector, different inspection results may be produced according to the inspector's skill level, which makes it difficult to increase the reliability of the inspection. . As a result, when the conventional inspection method is used, the process efficiency is lowered and the process cost is increased.

In particular, since the conventional wafer pattern inspection is almost impossible to perform a full inspection, sampling inspection of some wafers is performed, which also acts as a factor to lower the reliability of the inspection.

Korean Unexamined Patent Publication No. 1998-070851 (published date: October 26, 1998)

In order to solve the above problems, the present invention is to provide a wafer pattern inspection apparatus and inspection method that can improve the reliability of the inspection as well as improve the process efficiency by non-destructive inspection of the wafer. have.

In order to achieve the above object, the present invention comprises a main chamber; A subchamber for guiding the wafer after the pattern and etching process into the main chamber; A pattern inspection unit installed in the main chamber and inspecting a pattern formed on the wafer; And a controller configured to analyze the pattern based on the measured value of the pattern inspector, wherein the pattern inspector comprises: a first inspector configured to measure a plane length or a planar area of the wafer pattern; and an inclined surface length of the wafer pattern. It provides a wafer pattern inspection apparatus comprising a second inspection unit to measure.

The first inspection unit may be disposed perpendicular to the main chamber, and the second inspection unit may be disposed to be inclined to the main chamber. In this case, the second inspection unit is preferably inclined to form an inclination angle of 40 ~ 60 ° with the first inspection unit.

In another aspect, the present invention, the main chamber; A subchamber for guiding the wafer after the pattern and etching process into the main chamber; A pattern inspection unit formed in the main chamber and inspecting a pattern of the wafer; And a controller configured to analyze a pattern of the wafer based on the measured value of the pattern inspector, wherein the pattern inspector comprises: a first position disposed perpendicular to the main chamber to measure a plane length or a planar area of the wafer pattern; And, it is of course possible to provide a wafer pattern inspection apparatus, characterized in that the movable to the second position disposed inclined in the main chamber to measure the inclined surface length of the wafer pattern. In this case, the angle between the first position and the second position is preferably set to 40 ~ 60 °.

The pattern inspection unit may be a scanning electron microscope (SEM).

The subchamber may be provided in plurality.

It is also possible to further include a position measuring unit for measuring the position of the wafer introduced into the main chamber.

The subchamber may be temporarily formed while including a partial space of the main chamber. In this case, the present invention provides a through hole formed in the main chamber for drawing and withdrawing the wafer into the main chamber; A stage unit disposed in the main chamber to move the wafer in the X, Y, and Z directions, and to open and close the through hole of the main chamber; And a subchamber door disposed outside the main chamber to open and close the through hole of the main chamber, wherein the stage chamber and the subchamber door simultaneously close the through hole of the main chamber. Can be formed when. Preferably, the stage unit further includes a plurality of clamps for clamping the stage unit to maintain the closed position when the through hole of the main chamber is closed.

In addition, the present invention, to achieve the above object, the step of loading the wafer after the pattern and etching process to the sub chamber; Setting the vacuum pressure of the subchamber to the same vacuum pressure as that of the main chamber; Moving the wafer to a preset inspection position of the main chamber; Measuring a pattern shape of the wafer; Analyzing a pattern of the wafer based on the measured value of the pattern shape of the wafer; Moving the inspected wafer to the subchamber; And releasing the vacuum of the subchamber and unloading the wafer from the subchamber, wherein measuring the pattern shape of the wafer comprises a planar length and a planar area of the wafer pattern and an inclined surface length of the wafer pattern. It is possible to provide a wafer pattern inspection method characterized in that the measurement inspection.

In this case, at each step of loading and unloading a wafer into the subchamber, the subchamber may temporarily form a vacuum while including a portion of the main chamber. It is of course also possible to further include pre-aligning the wafer prior to loading the wafer into the subchamber.

As described above, in the present invention, by measuring the width or length of the pattern formed on the wafer surface through the pattern inspection unit as well as the height of the pattern, the wafer pattern defect inspection with high accuracy can be performed. Accordingly, the inspection time and cost required for the wafer pattern inspection can be reduced, and the inspection reliability can be improved since the whole inspection can be performed while the non-destructive inspection is performed.

1 is a schematic perspective view showing a wafer pattern inspection apparatus according to a first embodiment of the present invention;
2 is a schematic plan view showing a wafer pattern inspection apparatus according to a first embodiment of the present invention,
3 is a schematic side cross-sectional view showing a wafer pattern inspection apparatus according to a first embodiment of the present invention,
4 is a schematic cross-sectional view showing a PSS pattern of a wafer according to the first embodiment of the present invention,
5 is a cross-sectional view of a schematic PSS pattern showing a method for calculating an actual height of a PSS pattern of a wafer according to a first embodiment of the present invention;
6 is a flowchart illustrating a method of inspecting a wafer pattern according to a first embodiment of the present invention.
7 is a schematic side cross-sectional view showing a wafer pattern inspection apparatus according to a second embodiment of the present invention,
8 is a schematic perspective view showing a pattern inspection unit of the wafer pattern inspection apparatus according to the second embodiment of the present invention;
9 is a schematic plan view showing a wafer pattern inspecting apparatus according to a second embodiment of the present invention;
10 is a schematic plan view showing a wafer pattern inspection apparatus and a dual hand robot for loading and unloading a wafer into the inspection apparatus according to the second embodiment of the present invention.
11 to 13 are schematic cross-sectional views sequentially showing operating states of a wafer pattern inspection apparatus according to a second embodiment of the present invention;
14 is a flowchart illustrating a method of inspecting a wafer pattern according to a second exemplary embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. It is to be understood that the embodiments described below are provided for illustrative purposes only, and that the present invention may be embodied with various modifications and alterations. In the following description, well-known functions or constructions are not described in detail to avoid obscuring the subject matter of the present invention. In addition, the attached drawings are not drawn to scale in order to facilitate understanding of the invention, but the dimensions of some of the components may be exaggerated.

First, referring to FIGS. 1 to 6, a wafer pattern inspection apparatus and an inspection method according to a first embodiment of the present invention will be described.

Referring to FIG. 1, the wafer pattern inspection apparatus 10 according to the first exemplary embodiment of the present invention includes a main chamber 20, a plurality of sub chambers 30 mounted on one side of the main chamber 20, and a main body. The controller 60 for analyzing the pattern of the wafer W based on the pattern inspection unit 50 formed on the chamber 20 and the pattern shape measurement value of the wafer W measured through the pattern inspection unit 50 ( 3), a position measuring unit 70, and a stage driver 90 for controlling the stage in the X-axis and Y-axis directions.

The main chamber 20 is provided with a mounting portion 24 for mounting the pattern inspection unit 50 on the top.

The mounting part 24 is provided with beam holes 24a and 24b so that one side of the pattern inspecting part 50 can pass therethrough. In this case, one side of the pattern inspection unit 50 penetrating the beam holes 24a and 24b may scan the electron beam toward the wafer W moved to the inspection position inside the main chamber 20.

In addition, the main chamber 20 has a wafer W loaded inside the subchamber 30 on one side of the main chamber 20 in which the pair of subchambers 30 are slidably installed. A pair of shutters 22 that can be opened and closed to be provided are provided.

The pair of subchambers 30 may open / close a door 32 for opening and closing the inside of the subchamber portion 30 in which the wafer W is accommodated in the upper portion of the subchamber 30 so as to create a vacuum inside the subchamber 30. ) Is provided. In this case, the boat portion 34 on which the wafer W is seated is provided in the subchamber 30.

When the shutter unit 22 is open, the boat unit 34 moves the wafers W, which have been patterned and etched, into the main chamber 20, or, conversely, the wafers that have been inspected in the main chamber 20 ( It is driven by the transfer unit 80 so as to discharge W) to the outside of the main chamber 20.

As described above, in the first embodiment of the present invention having a pair of subchambers 30, the wafers W accommodated in one subchamber 30 are transferred to the main chamber 20 to inspect the wafer pattern. In the meantime, after receiving the wafer (W) to be examined next in the remaining subchamber (30), the inside of the subchamber (30) forms a vacuum pressure equal to the vacuum pressure of the main chamber (20) and waits for inspection. As such, when the subchamber 30 is operated in dual, the waiting time can be reduced, thereby minimizing the inspection delay.

In the present exemplary embodiment, the subchambers 30 are provided as a pair, but the present invention is not limited thereto, and the subchambers 30 may be provided as a single unit. In addition, when the sub chamber 30 is formed in a single, it is preferable that the number of the shutter unit 22 is also formed in a single corresponding to the number of the sub chamber 30. That is, the shutter unit 22 is set in proportion to the number of subchambers.

The pattern inspection unit 50 is an inspection device that inspects the shape of the pattern formed on the wafer W. The pattern inspection unit 50 includes a first inspection unit 52 that inspects a plane of the wafer W pattern, and a second inspection unit that inspects the height of the pattern. It consists of 54.

The first inspection unit 52 is vertically mounted to the mounting unit 24 of the main chamber 20, and the second inspection unit 4 is inclinedly mounted to the mounting unit 24 of the main chamber 20.

Preferably, the first and second inspection units 52 and 54 each comprise a scanning electron microscope (SEM). A scanning electron microscope (SEM) is a microscope that scans an electron beam onto an object to be observed (in the embodiment of the present invention, which means the pattern of the wafer W), and observes an image obtained from the electrons emitted from the object. When this is excellent and a scanning electron microscope is used, wafer nondestructive inspection is possible.

As described above, the first and second inspection units 52 and 54 are made of a scanning electron microscope, so that the electrons generated in the electron beam can accurately reach the surface pattern of the wafer W. 30 It is important that the interior is maintained in vacuum.

The second inspection unit 54 is arranged to form an angle α (see FIG. 3) of 40 to 60 ° between the first inspection unit 52. If the angle α is less than 40 ° or exceeds 60 °, there is a problem that an error occurrence probability is significantly increased when the height of the wafer W is measured. More preferably, the angle α is maintained at an angle of 50 degrees.

On the other hand, in the present embodiment, the pattern inspection unit 50 is inclined at an angle α of 40 to 60 ° from the first inspection unit 52 and the first inspection unit 52 disposed perpendicular to the main chamber 20. Although the example which consists of the 2nd inspection part 54 is demonstrated as an example, it is not limited to this, The pattern inspection part 50 may employ | adopt a single inspection part.

As such, when the pattern inspecting unit 50 is formed of a single inspecting unit, the inclination movement range of the pattern inspecting unit 50 is 40 to 40 based on the pattern inspecting unit 50 axis at a first position disposed perpendicular to the main chamber 20. It is preferable to be able to turn to the 2nd position arrange | positioned inclined in 60 degree range. In this case, the pattern inspection unit 50 itself performs both the functions of the first and second inspection units 52 and 54.

The position measuring unit 70 is installed above the main chamber 20 to measure the position of the wafer W introduced into the main chamber 20 by the boat 34. The position measuring unit 70 may be formed of a vision camera, and the imaging unit (not shown) is positioned inside the main chamber 20 by penetrating the main chamber 20 to enable imaging of the wafer W. .

Referring to FIG. 2, the stage driver 90 is installed in the main chamber 20 so that the boat 34 is seated when the boat 34 on which the wafer W is seated enters the main chamber 30. In addition, the boat 34 is controlled to be movable in the X and Y-axis directions in order to change the inspection position of the wafer W in the main chamber 20.

The stage driver 90 includes an X-axis driver 92 for controlling the X-axis movement of the stage 96 on which the boat unit 34 is seated, and a Y-axis driver 94 for controlling the Y-axis movement of the stage 96. ) In this case, referring to FIG. 2, the X-axis direction refers to the front-rear direction based on the subchamber 30, and the Y-axis direction refers to the left-right direction based on the subchamber 30. The X- and Y-axis driving units 92 and 94 may be formed of a driving motor or a cylinder device.

Hereinafter, an inspection method for inspecting a wafer pattern using the wafer pattern inspection apparatus 10 according to the first embodiment of the present invention configured as described above will be described.

First, when any one door 32 of the pair of subchambers 30 is opened, the wafer W having completed the pattern process and the etching process is seated on the boat 34 of the subchamber 30. In this case, the wafer W is seated on the boat portion 34 by a conventional hand robot (not shown), but may be seated on the boat portion 34 manually by an operator. At this time, the remaining subchamber 30 loads the wafer W to be subjected to the next inspection while waiting for the inspection of the wafer W loaded first.

As described above, when the wafer W is seated on the boat 34, the vacuum is formed such that the inside of the subchamber 30 maintains the same vacuum pressure as the vacuum pressure of the main chamber 20 after the door 32 is closed. .

As described above, when a vacuum is formed in the subchamber 30, the shutter unit 22 is opened and the boat unit 34 is guided to the stage 96 driven in the main chamber 20 in a vacuum state. At this time, the position measuring unit 70 measures the position of the boat 34 guided to the stage 96.

The stage driver 90 calculates a preset inspection position based on the position measured by the position measuring unit 70, and then appropriately controls the X-axis driving unit 92 and the Y-axis driving unit 94 to control the pattern inspection unit ( The stage 96 is moved to the calculated inspection position so that the pattern shape of the wafer W can be measured through 50).

Whether the pattern formed on the wafer is defective is almost integral with the surface of the wafer (W), but for accuracy of measurement, the stage driver (90) is used to check the pattern formed on the surface of the wafer (W) by the pattern inspection unit (50). The position of the stage 96 is controlled to be measurable at the site. In the present embodiment, the position of the stage 96 is changed so that three-point measurement is possible, so that the measurement of the pattern inspection unit 50 is sequentially performed at at least three portions of the surface of the wafer (W).

Looking at the pattern shape inspection measurement of the wafer made in the pattern inspection unit 50 in detail as follows.

As described above, the pattern inspection unit 50 includes a first inspection unit 52 and a second inspection unit 54, and the vertical plane of the wafer W pattern is formed by the electron beam generated through the first inspection unit 52. The length of, is measured, the inclined plane of the wafer (W) through the electron beam generated through the second inspection unit 54, the inclined image is measured to convert the height.

In this case, the 1st inspection part 52 can measure the planar area of the wafer W pattern at the time of a foreign material or defect inspection, for example. For height conversion, a reference value is previously set using a standard sample, and the measured value is evaluated.

In this embodiment, since the inclined plane of the wafer W can be measured through the second inspection unit 54, the controller 60 is shown in FIG. 4 based on the measured values measured by the two inspection units 52 and 54. As described above, the pattern bottom length A, the space between patterns B, the etching depth C, the bottom vertical depth D, the top length E, and the pattern side length F can be calculated. .

5, when the wafer W pattern is assumed to be conical, the actual height calculation formula of the wafer W pattern is represented by Equation 1 below.

Here, H is the actual height, H 'is the inclined surface length, θ means the inclination angle of the second inspection unit 54.

That is, since the actual height H of the wafer W is a value obtained by multiplying the actual height H by the sin (θ) value, the inclined plane length H 'measured from the height inspection unit 54. ) Can be obtained by dividing by sin (θ).

Therefore, the wafer pattern inspection method according to the present embodiment can analyze the pattern shape of the wafer more precisely than the inspection through the data measured in the plane of the wafer, as in the prior art, and thus can detect a defective wafer or the like having a poor pattern. It can be accurately determined.

When the pattern shape measurement of the wafer W and the inspection of the defect of the wafer W are completed as described above, the stage driver 90 controls the X-axis driver 92 and the Y-axis driver 94 to control the stage 96. Move to the initial position.

Thereafter, the boat unit 34 returns to the inside of the subchamber 30 through the shutter unit 22 at the stage 96. When the boat part 34 is seated in the subchamber 30, the shutter part 22 is closed and the vacuum in the subchamber 30 is released.

When the vacuum in the subchamber 30 is released, the door 32 is opened and the wafer W is unloaded from the subchamber 30 (specifically, the inspected wafer W is the boat portion 34. Unloaded from).

On the other hand, the pair of subchambers 30 are independently controlled alternately. That is, both of the sub chambers 30 are simultaneously controlled to be in a vacuum state, so that the wafers W are not introduced into the main chamber 20, and the sub chambers 30 are alternately operated so that the main chamber 20 is operated. Pattern checking is done internally.

Hereinafter, a wafer pattern inspection apparatus and an inspection method according to a second embodiment of the present invention will be described with reference to FIGS. 7 to 14.

Referring to FIG. 7, the pattern inspection apparatus 100 according to the second embodiment of the present invention may include a main chamber 120, a sub chamber 140 selectively formed while including a part of the main chamber 120, and Control unit (not shown) for analyzing the pattern of the wafer (W) based on the pattern inspection unit 150 formed on the main chamber 120 and the pattern shape measurement value of the wafer (W) measured by the pattern inspection unit 150. ), And a position measuring unit (not shown).

The main chamber 120 is supported by the die 138 to be located at a predetermined height from the ground. Like the main chamber 120 of the first embodiment described above, the main chamber 120 has a space in which a vacuum is formed, and a pattern inspection unit 150 and a position measuring unit (not shown) on the upper part of the main chamber 120. Mounting unit 124 is provided is installed.

In this case, the mounting portion 124 has beam holes 124a and 124b on which the first and second inspection portions 152 and 154 of the pattern inspection unit 150 are mounted, respectively, and any one of the plurality of through holes 124c formed in the circumferential direction. The position measuring unit is installed. Here, the unused holes of the plurality of through holes 124c are preferably closed. When a new position measuring unit is additionally installed, the closed hole may be opened to install an additional position measuring unit.

In addition, the main chamber 120 is provided with a stage unit 134 for moving the wafer W to the inspection position. The stage unit 134 is provided with a stage 134a capable of fixing the wafer on the uppermost side, and moves the wafer fixed to the stage 134a in the X, Y, and Z axis directions. The stage unit 134 not only moves the wafer to the inspection position, but also a part of the subchamber 140 along with the through-hole 120a and the subchamber door 141 formed at an upper side of the main chamber 120. Form.

The stage unit 134 includes a first movable plate 135 that moves in the X-axis direction, a second movable plate 136 that moves in the Y-axis direction, and a third movable plate 137 that moves up and down in the Z-axis direction. do.

The first movable plate 135 is provided with a plurality of first LM blocks 135a at the bottom thereof, and the plurality of first LM blocks 135a are slidable along the pair of first LM guide rails 135b. The first LM of the pair is coupled to the guide rail 135b. In this case, the first movable plate 135 receives the driving force from the first drive motor 135c.

The second movable plate 136 is provided with a pair of first LM guide rails 135b on an upper surface thereof, and a plurality of second LM blocks 136a are coupled to the bottom surface thereof. In this case, the plurality of second LM blocks 136a is coupled to the pair of second LM guide rails 136b to be slidable along the pair of second LM guide rails 136b. The second movable plate 135 receives a driving force from the second driving motor 135c.

The third movable plate 137 is provided with a pair of second LM guide rails 136b on an upper surface thereof, and a plurality of supports 137a disposed vertically on the bottom surface thereof. Lower ends of the plurality of supports 137a are fixed to the upper surface of the elevating frame 137b, and the elevating frame 137b is installed to be interlocked with the third driving motor 137c. Accordingly, the third movable plate 137 moves up and down together with the lifting frame 137b as the third driving motor 137c operates.

On the other hand, the vacuum opening and closing member 139 is provided on the upper portion of the first movable plate 135 described above. The vacuum opening and closing part 139 opens and closes the through hole 120a formed at an upper side of the main chamber 120 from the inside of the main chamber 120. In this case, the through hole 120a of the main chamber 120 has a diameter larger than the size of the stage 134a so that the stage 134a can pass therethrough.

The subchamber 140 is not always formed like the main chamber 120 but is selectively formed. That is, the subchamber 140 is formed while temporarily including a part of the main chamber 120 before transferring the wafer supplied by the robot arm RA to the main chamber 120. 12, the setting range of the subchamber 140 is a vacuum opening / closing member for closing the through-hole 120a of the main chamber 120 and the through-hole 120a inside / outside the main chamber 120, respectively. 139 and the vacuum opening / closing door 141 are set.

The vacuum opening / closing door 141 is installed to vertically move up and down to open and close the through hole 120a outside the main chamber 120.

The pattern inspecting unit 150 includes a first inspecting unit 152 and a second inspecting unit 154 installed in the mounting unit 124 formed on the main chamber 120. In this case, since the pattern inspection unit 150 of the second embodiment is the same as the pattern inspection unit 50 of the first embodiment, detailed description thereof will be omitted.

The control unit according to the second embodiment of the present invention controls the stage unit 134, the vacuum opening and closing door 141, the pattern inspection unit 150 and the position measuring unit (not shown), the wafer W as in the first embodiment ) Check the pattern shape.

In this case, the controller controls the pattern inspection apparatus in the same manner as in FIG. 14. That is, as shown in FIG. 11, in order to load the wafer W into the stage 134a, the stage 134a is moved to the wafer loading position through the through hole 120a of the main chamber 120.

In this state, as shown in FIG. 10, the robot arm RA of the dual hand robot R grasps the wafer W to be inspected from the work table WP and transfers the wafer W to a pre aligner P beforehand. After the alignment, the aligned wafer is loaded into the stage 134a.

At this time, since the through hole 120a of the main chamber 120 is closed by the vacuum opening / closing member 139 of the stage unit 134, the main chamber 120 forms a vacuum at a predetermined vacuum pressure.

Referring to FIG. 12, after the wafer is loaded in the stage 134a, the vacuum opening / closing door 141 is lowered to close the through hole 120a and the inside of the sub chamber 140 is filled with the inside of the main chamber 120. The vacuum is formed at the same vacuum pressure as the pneumatic pressure.

Thereafter, as shown in FIG. 13, the stage 134a is moved to the inspection position below the pattern inspection unit 150. At this time, the stage 134a is precisely moved to an appropriate inspection position by a positioning unit (not shown) as in the first embodiment, and then the pattern inspection unit 150 performs a pattern inspection of the wafer.

When the wafer pattern inspection is completed, as shown in FIG. 12, the stage 134a passes through the through hole 120a and moves to the unloading position of the wafer. At this time, the unloading position of the wafer is the same as the wafer loading position.

Subsequently, the vacuum of the subchamber 140 is released, the vacuum opening / closing door 141 is raised to open the subchamber 140, and the wafer is released from the stage 134a by the robot arm RA waiting. Loaded.

As described above, in the present invention, by measuring the width or length of the pattern formed on the wafer surface through the pattern inspection unit as well as the height of the pattern, the wafer pattern defect inspection with high accuracy can be performed.

As a result, inspection time and cost required for wafer pattern inspection can be reduced, and a full inspection can be performed while the non-destructive inspection is performed, thereby improving the reliability of the inspection.

Although one embodiment of the present invention has been illustrated and described above, the present invention is not limited to the above-described specific embodiment, and is normally used in the art to which the present invention pertains without departing from the spirit of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

W: Wafer 10,100: Wafer pattern inspection device
20,120: main chamber 22: shutter unit
24, 124: mounting portion 30, 140: subchamber
32: cover portion 34: boat portion
50,150: pattern inspection unit 52,152: first inspection unit
54, 154: second inspection unit 60: control unit
70: position measuring unit 80: transfer unit
90: stage driving unit 92: X-axis driving unit
94: Y axis drive unit 96: stage
134: stage unit 139: vacuum opening and closing member
141: vacuum opening door

Claims (14)

Main chamber;
A subchamber for guiding the wafer after the pattern and etching process into the main chamber;
A pattern inspection unit installed in the main chamber and inspecting a pattern formed on the wafer; And
And a controller configured to analyze the pattern based on the measured value of the pattern inspector.
The pattern inspection unit,
A first inspection unit measuring a plane length or a plane area of the wafer pattern and disposed perpendicular to the main chamber;
Wafer pattern inspection apparatus for measuring the length of the inclined surface of the wafer pattern and consisting of a second inspection unit disposed inclined in the main chamber. delete The method of claim 1,
The second inspection unit is a wafer pattern inspection apparatus, characterized in that arranged inclined to form an inclination angle of 40 ~ 60 ° with the first inspection unit. Main chamber;
A subchamber for guiding the wafer after the pattern and etching process into the main chamber;
A pattern inspection unit formed in the main chamber and inspecting a pattern of the wafer; And
And a controller configured to analyze a pattern of the wafer based on the measured value of the pattern inspection unit.
The pattern inspection unit,
A first position disposed perpendicular to the main chamber to measure a plane length or plane area of the wafer pattern;
Wafer pattern inspection apparatus characterized in that the movable to the second position disposed inclined in the main chamber to measure the inclined surface length of the wafer pattern. 5. The method of claim 4,
Wafer pattern inspection apparatus, characterized in that the angle between the first position and the second position is set to 40 ~ 60 °. The method according to claim 1 or 4,
The pattern inspection unit is a wafer pattern inspection apparatus, characterized in that consisting of a scanning electron microscope (SEM). The method according to claim 1 or 4,
Wafer pattern inspection apparatus, characterized in that a plurality of the sub chamber is provided. The method according to claim 1 or 4,
Wafer pattern inspection apparatus further comprises a position measuring unit for measuring the position of the wafer entered into the main chamber. The method according to claim 1 or 4,
The subchamber is a wafer pattern inspection apparatus, characterized in that formed temporarily including a part of the space of the main chamber. 10. The method of claim 9,
A through hole formed in the main chamber to draw and withdraw a wafer into the main chamber;
A stage unit disposed in the main chamber to move the wafer in the X, Y, and Z directions, and to open and close the through hole of the main chamber; And
And a subchamber door disposed outside the main chamber to open and close the through hole of the main chamber.
And the subchamber is formed when the stage unit and the subchamber door close the through-holes of the main chamber at the same time. The method of claim 10,
And a plurality of clamps for clamping the stage unit to maintain the closed position when the stage unit closes the through-hole of the main chamber. Loading the wafer after the patterning and etching process into the subchamber;
Setting the vacuum pressure of the subchamber to the same vacuum pressure as that of the main chamber;
Moving the wafer to a preset inspection position of the main chamber;
Measuring a pattern shape of the wafer;
Analyzing a pattern of the wafer based on the measured value of the pattern shape of the wafer;
Moving the inspected wafer to the subchamber; And
Releasing the vacuum in the subchamber and unloading a wafer from the subchamber;
The pattern shape measuring step of the wafer, the wafer pattern inspection method, characterized in that for measuring the plane length and planar area of the wafer pattern, the inclined surface length of the wafer pattern. The method of claim 12,
In each step of loading and unloading a wafer into the subchamber,
And the subchamber includes a partial space of the main chamber and temporarily forms a vacuum. The method of claim 12,
Before loading a wafer into the subchamber,
Wafer pattern inspection method further comprising the step of pre-aligning the wafer.

Images