KR101321356B1

KR101321356B1 - Nitride semiconductor light emitting device

Info

Publication number: KR101321356B1
Application number: KR1020070007389A
Authority: KR
Inventors: 박진수
Original assignee: 엘지이노텍 주식회사
Priority date: 2007-01-24
Filing date: 2007-01-24
Publication date: 2013-10-22
Also published as: KR20080069766A

Abstract

The present invention relates to a nitride semiconductor light emitting device.

The nitride semiconductor light emitting device according to the embodiment of the present invention includes a substrate and a plurality of Y-shaped patterns formed on the surface of the light emitting device including an n-type nitride layer, an active layer, and a p-type nitride layer on the substrate.

Description

Nitride semiconductor light emitting device

1 is a cross-sectional view showing a conventional nitride semiconductor light emitting device.

2 is a cross-sectional view showing a nitride semiconductor light emitting device according to an embodiment of the present invention.

3 is a perspective view showing a Y-shaped pattern formed on a substrate according to an embodiment of the present invention.

4 is a detailed configuration diagram of the Y-shaped pattern of FIG.

5 is a front view of the Y-shaped pattern of FIG.

6 is a view showing a modification of the Y-shaped pattern according to the present invention.

7 is a view showing another modified example of the Y-shaped pattern according to the present invention.

100 nitride semiconductor light emitting device 110 substrate

120: Y pattern 130: n-type nitride layer

140: active layer 150: p-type nitride layer

151 p-type electrode 152 n-type electrode

The present invention relates to a nitride semiconductor light emitting device.

In general, a semiconductor light emitting device may be a light emitting diode (LED), which is a device that emits an electrical signal in the form of light using characteristics of a compound semiconductor.

Such LEDs are made of a surface mount device type for direct mounting on a printed circuit board (PCB) board, and accordingly, LED lamps, which are used as display devices, are being developed as surface mount device types. The mounting element can replace the existing simple lighting lamp, which is used for display of various colors.

In particular, many researches and investments have been made on semiconductor light emitting devices using Group 3 and Group 5 compounds such as GaN (gallium nitride), AlN (aluminum nitride), and InN (indium nitride). This is because the nitride semiconductor light emitting device has a band gap of a very wide area ranging from 1.9 eV to 6.2 ev, so that the primary color of light can be realized using the nitride semiconductor light emitting device.

1 is a view showing a conventional nitride semiconductor light emitting device.

Referring to FIG. 1, in the nitride semiconductor light emitting device, an n-type GaN layer 15 is formed on a sapphire substrate 11, an active layer 17 is formed on a portion of the n-type GaN layer, and a p-type GaN is formed on the active layer. A layer 19 is formed, and a transparent electrode 20 is formed on the p-type GaN layer. The p-type electrode 21 is formed on the transparent electrode 20, and the n-type electrode 23 is formed on the n-type GaN layer 15.

When current is applied to the p-type electrode 21 and the n-type electrode 23 of the nitride semiconductor light emitting device, light generated in the active layer 17 is radiated in all directions inside the active layer. In this case, since the refractive index of the nitride semiconductors is too large compared to that of the cap material epoxy surrounding the air and the light emitting device chip, only light emitted at an angle smaller than a certain critical angle escapes to the outside when radiated with air or epoxy. Light having an angle greater than the critical angle is reflected at the interface between the semiconductor / air and is absorbed into the semiconductor material.

That is, at least 80% of the light generated in the active layer 15 due to the high refractive index of the GaN layer (n = 2.4, n = medium refractive index) is critical in the GaN layer as shown in FIG. 1 by Snell's Law (Snell's Law). It is constrained within the angle and guided in the GaN layer to absorb and disappear.

As such, the light absorbed into the semiconductor decreases the external light emitting efficiency of the light emitting device and adversely affects the life of the light emitting device. Therefore, it is important to reduce as much as possible the amount of light reflected in the semiconductor material among the light generated in the active layer 15.

The present invention provides a nitride semiconductor light emitting device.

The present invention provides a nitride semiconductor light emitting device capable of improving the light extraction efficiency by forming a Y-shaped pattern on the substrate surface.

Hereinafter, a nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a side cross-sectional view showing a nitride semiconductor light emitting device according to an embodiment of the present invention.

Referring to FIG. 2, the nitride semiconductor light emitting device 100 includes a substrate 110 having a Y-shaped pattern 120, an n-type nitride layer (n-GaN) 130, an active layer 140, and a p-type nitride layer ( p-GaN) 150, n-type electrode 151, and p-type electrode 152.

The substrate 110 may be formed of any one of sapphire substrate, silicon carbide (SiC), ZnO, Si, GaAs, and GaN.

A plurality of Y-shaped patterns 120 are formed on the surface of the substrate 110. That is, the substrate 110 may be formed of a sapphire substrate patterned in a Y shape.

The Y-shaped pattern 120 is formed integrally with the substrate 110 in a Y-shape each having three sides. In order to form the pattern 120, a mask pattern is formed on the surface of the substrate 110, and a Y-shaped pattern is formed by etching by a dry etching method such as reactive ion etching (RIE) or inductive coupled plasma (ICP etching). can do.

As shown in FIGS. 3 to 5, the Y-shaped pattern 120 formed on the surface of the substrate 110 is formed in a Y shape, arranged in parallel, and arranged in a zigzag with adjacent columns (or rows). do. The angles (θ1 = 120 degrees) between the sides 121, 122, and 123 of the Y-shaped pattern 120 may be formed to be the same, and the distance G2 between adjacent Y-shaped patterns may be formed to be the same. In addition, the end portions 123 of the sides 121, 122, and 123 of the Y-shaped pattern 120 are formed in a triangular structure to maintain a constant distance from adjacent sides.

The lengths of the three sides 121, 122, and 123 constituting the Y-shaped pattern 120 may be the same as each other, or at least one side may be formed longer or shorter than the other side. Also, the angle between two sides of the three sides may not be 120 degrees.

Here, one side (121, 122, 123) of the Y-shaped pattern 120 is formed in the groove (P) portion of the other adjacent Y-shaped pattern, the light is due to the structural characteristics of the Y-shaped pattern 120 formed on the substrate surface The probability of refraction or scattering increases, leading to an increase in external quantum efficiency.

And the interval or width between the Y-shaped pattern 120 is determined by λ / (4n), the interval or width between the adjacent sides of the Y-shaped pattern is formed about 0.1um ~ 10um. The wavelength? Is, for example, 460 nm as the emission wavelength, and n = refractive index of the medium. The gap is the distance between each adjacent side, and the width is the distance between adjacent patterns in the horizontal or vertical direction.

6 is a modified example of the Y-shaped pattern according to the present invention, the first Y-shaped pattern 125 is configured by connecting a plurality, the second Y-shaped pattern 126 is a plurality of grooves between the plurality of individually connected first Y-shaped pattern ( 127) is arranged in the reverse direction.

7 is another modified example of the Y-shaped pattern according to the present invention, the Y-shaped pattern 128 forms each side of the Y-shaped at a 120 degree angle (θ1), and alternately arranged with adjacent Y-shaped patterns .

Meanwhile, as shown in FIG. 2, a light emitting diode structure is stacked on the substrate 110. The light emitting diode structure has an n-type nitride layer (n-GaN) 130 formed on the substrate 110, and the n-type nitride. An active layer 140 is formed on a portion of the layer 130, and a p-type nitride layer (p-GaN) 150 is formed on the active layer. An n-type electrode 152 is formed on the n-type nitride layer 130, and a p-type electrode 151 is formed on the p-type nitride layer.

The nitride semiconductor light emitting device 100 of the present invention may be applied to a pn junction or npn junction structure using a compound semiconductor material such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP, and a buffer layer (not shown) between the substrate and the nitride layer. This may be further formed. In addition, the Y-shaped pattern may be formed in the buffer layer instead of the substrate.

When the current is applied to the nitride semiconductor light emitting device 100 through the n-type electrode 152 and the p-type electrode 151, light is generated in the active layer 130. The generated light is emitted in all directions, wherein the Y-shaped pattern 120 on the substrate is generated in the active layer 140 to change the critical angle of the light incident on the substrate 110 to guide the light inside the semiconductor light emitting device. By minimizing the amount of light, it is possible to increase the external light extraction effect.

Although the present invention has been described above with reference to the embodiments, these are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may have abnormalities within the scope not departing from the essential characteristics of the present invention. It will be appreciated that various modifications and applications are not illustrated. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

According to the nitride semiconductor light emitting device according to the embodiment of the present invention, by forming the Y-shaped pattern formed on the substrate, it is possible to increase the external light extraction effect.

Claims

A light emitting device comprising a substrate and an n-type nitride layer, an active layer, and a p-type nitride layer on the substrate,

It includes a plurality of Y-shaped pattern formed on the surface of the substrate,

The plurality of Y-shaped patterns are formed in the form of convex portions on the surface of the substrate, the nitride semiconductor light emitting device of the plurality of Y-shaped patterns are disposed spaced apart from each other adjacent to each other.

The method of claim 1,

The Y-shaped pattern is formed of a zig zag nitride semiconductor light emitting device.

The method of claim 1,

The nitride semiconductor light emitting device of the three sides of the Y-shaped pattern is formed to be the same.

The method of claim 1,

The nitride semiconductor light emitting device of claim 9, wherein the Y-shaped pattern and the adjacent Y-shaped pattern have the same spacing.

The method of claim 1,

The Y-shaped pattern is formed of the nitride semiconductor light emitting device having the same angle between each side.

The method of claim 1,

The nitride semiconductor light emitting device having a spacing between the Y-shaped pattern is 0.1 ~ 10um.

delete

The method of claim 1,

And the Y-shaped patterns are alternately arranged.