KR101298173B1 - Color filter substrate and electro-phoretic display device having the same - Google Patents

Abstract

A color filter substrate for improving reflectance and color reproducibility, and an electrophoretic display device having the same are disclosed. The color filter substrate includes a base substrate, a partition, a color filter layer, and an electrophoretic layer. The partition wall portion is formed on the first surface of the base substrate, divides the base substrate into a transmission region and a light shielding region, and forms a pixel space in the transmission region. The color filter layer is formed in the transmission region. The electrophoretic layer is formed in pixel space and includes a capsule having electrophoretic particles. Accordingly, the partition wall portion is formed to form a pixel space corresponding to the pixel portion, and the reflectance and color reproducibility can be improved by filling the electrophoretic layer in the pixel space.

Electrophoretic display, bulkhead, capsule, reflectance, color reproducibility

Description

COLOR FILTER SUBSTRATE AND ELECTRO-PHORETIC DISPLAY DEVICE HAVING THE SAME}

1 is a conceptual diagram of a general electrophoretic display device.

2 is a plan view of an electrophoretic display device according to an exemplary embodiment of the present invention.

3 is a cross-sectional view of an electrophoretic display device according to a first exemplary embodiment of the present invention.

4A, 4B, and 4C are process diagrams for describing a method of manufacturing the color filter substrate illustrated in FIG. 3.

5 is a cross-sectional view of an electrophoretic display device according to a second exemplary embodiment of the present invention.

6 is a cross-sectional view of an electrophoretic display device according to a third exemplary embodiment of the present invention.

7A, 7B, and 7C are process diagrams for describing a method of manufacturing the color filter substrate illustrated in FIG. 6.

8 is a cross-sectional view of an electrophoretic display device according to a fourth exemplary embodiment of the present invention.

9A, 9B, and 9C are process diagrams for describing a method of manufacturing the color filter substrate illustrated in FIG. 8.

<Description of the symbols for the main parts of the drawings>

100: opposing substrate 200, 300, 500: color filter substrate

220, 330, 530: color filter layer 230, 340, 540: microcapsules

240, 350, 550: electrophoretic layer TL: thin film transistor layer

TFT1, TFT2: first and second switching elements CE: common electrode layer

W: bulkhead

The present invention relates to a color filter substrate and an electrophoretic display device having the same, and a color filter substrate for improving reflectance and color reproducibility, and an electrophoretic display device having the same.

1 is a conceptual diagram of a general electrophoretic display device.

Referring to FIG. 1, an electrophoretic display generally has a reflective structure that displays an image by reflecting light incident from the outside. Specifically, the electrophoretic display device includes a white ink particle 1 charged with a negative charge, a black ink particle 2 charged with a positive charge, and a microcapsule 5 surrounding the transparent dielectric fluid 3. ) And the microcapsules 5 are mixed with a binder to have a structure disposed between both electrodes.

The electrophoretic display applies a directional electric field to both electrodes to display white when the white ink particles 1 collect in the VIEW DIRECTION, and conversely, black when the black ink particles 2 collect. Drive on the principle shown. That is, light incident from the outside is reflected by the white ink particles 1 moving in the viewing direction to display an image.

The electrophoretic display device is displayed like a paper because it does not have a viewing angle dependency, and has a memory property, and thus maintains the displayed image even when voltage is not applied continuously.

Accordingly, the technical problem of the present invention was conceived in this respect, and an object of the present invention is to provide a color filter substrate for an electrophoretic display device having excellent reflectance and color reproducibility.

Another object of the present invention is to provide an electrophoretic display device having the color filter substrate.

The color filter substrate according to the embodiment for realizing the object of the present invention includes a base substrate, a partition, a color filter layer and an electrophoretic layer. The barrier rib portion is formed on the first surface of the base substrate, divides the base substrate into a transmission region and a light blocking region, and forms a pixel space in the transmission region. The color filter layer is formed in the transmission region. The electrophoretic layer is formed in the pixel space and includes a capsule having electrophoretic particles.

Further comprising an electrode layer formed of a transparent conductive material between the first surface and the electrophoretic layer.

The semiconductor device may further include a thin film transistor layer formed between the first surface and the electrode layer, wherein the thin film transistor layer may include a gate metal pattern including gate lines and a gate electrode of the thin film transistor, and a source line extending to cross the gate lines. And a source metal pattern including a source and a drain electrode of the thin film transistor.

Preferably, the electrode layer includes pixel electrodes electrically connected to a plurality of thin film transistors. The color filter layer is formed on the thin film transistor layer corresponding to a region where the pixel electrodes are formed. The partition wall portion is formed on the color filter layer between regions where the pixel electrodes are formed.

More preferably, the color filter layer is formed on the second surface of the base substrate facing the first surface in correspondence to the region where the pixel electrode is formed. The barrier rib portion is formed on the thin film transistor layer between regions where the pixel electrodes are formed.

An electrophoretic display device according to an exemplary embodiment for realizing another object of the present invention includes a color filter substrate and an opposing substrate. The color filter substrate may be formed on a first surface of the first base substrate, and divides the first base substrate into a transmission region and a light shielding region, and forms a pixel space in the transmission region, a color filter layer formed in the transmission region; And an electrophoretic layer formed in the pixel space and including a capsule having electrophoretic particles. The opposing substrate is coupled to the color filter substrate.

According to the color filter substrate and the electrophoretic display device including the same, the partition wall portion is formed to form a pixel space corresponding to the pixel portion and the electrophoretic layer is filled in the pixel space to improve reflectance and color reproducibility.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. In the description, when a layer, a film, an area, a plate, or the like is referred to as being "on" another part, it includes not only the case where it is "directly on" another part but also another part in between. On the contrary, where a section such as a layer, a film, an area, a plate, etc. is referred to as being "under" another section, this includes not only the case where the section is "directly underneath" The first electrode layer is formed on the color filter substrate and is called a common electrode layer or a pixel electrode layer according to an embodiment. In addition, the second electrode layer is formed on the counter substrate and is referred to as a common electrode layer or a pixel electrode layer according to an embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in more detail with reference to the accompanying drawings.

2 is a plan view of an electrophoretic display device according to an exemplary embodiment of the present invention. 3 is a cross-sectional view of the electrophoretic display device according to the first exemplary embodiment, taken along the line II ′ of FIG. 2.

2 and 3, the electrophoretic display includes a color filter substrate 200 including an opposing substrate 100 and an electrophoretic layer 240.

The opposing substrate 100 includes a first base substrate 101. The first base substrate 101 is preferably formed of a material that shields and reflects the incident light L1.

The thin film transistor layer TL is formed on the first base substrate 101. The thin film transistor layer TL includes gate lines GLn-1 and GLn extending in a first direction and source lines DLm-1, DLm, and DLm + extending in a second direction crossing the first direction. 1) and first and second thin film transistors TFT1 and TFT2 connected to the gate lines GLn-1 and GLn and the source lines DLm and DLm + 1.

Pixel portions P1 and P2 are defined in the first base substrate 101 by the gate lines GLn-1 and GLn and the source lines DLm-1, DLm, and DLm + 1. In detail, a first thin film transistor TFT1 connected to an n-th gate line GLn and an m-th source line DLm is formed in the first pixel portion P1.

The first thin film transistor TFT1 includes a first gate electrode GE connected to the n-th gate line GLn, a gate insulating layer 110 formed on the first gate electrode GE, and the gate insulating layer. A first channel portion CH formed on the 110, a first source electrode SE connected to the m th source wiring DLm, a first drain electrode DE connected to the first pixel electrode PE1, and And a protective insulating layer 120 formed on the first source and first drain electrodes SE and DE. The organic insulating layer 130 is formed on the protective insulating layer 120. The organic insulating layer 130 may not be formed.

The second pixel portion P2 includes a second thin film transistor TFT2 and the second thin film transistor TFT2 and the second contact portion connected to an n-th gate line GLn and an m + 1 th source line DLm + 1. The second pixel electrode PE2 is electrically connected through the CT2. Since the second thin film transistor TFT2 is formed in the same structure as the first thin film transistor TFT1 as shown in FIGS. 2 and 3, a detailed description thereof will be omitted.

The pixel electrode layer PE is formed on the thin film transistor layer TL. The pixel electrode layer PE may include the first pixel electrode PE1, the second thin film transistor TFT2, and the second contact portion electrically connected to the first thin film transistor TFT1 and the first contact part CT1. The second pixel electrode PE2 is electrically connected through the CT2.

The color filter substrate 200 includes a second base substrate 201, a partition wall portion W, a color filter layer 220, a common electrode layer CE, and an electrophoretic layer 240. The second base substrate 201 may be formed of a material having flexibility. Preferably it is formed of a plastic material (PET) excellent in light transmittance, heat resistance, chemical resistance, mechanical strength and the like.

The partition wall portion W is formed to correspond to a region where the first and second pixel electrodes PE1 and PE2 are not formed to divide the second base substrate 201 into a transmission region and a light blocking region.

The area in which the partition wall portion W is formed is a light shielding area that blocks light, and the area in which the partition wall portion W is not formed is a transmission area through which light passes. Preferably, the partition wall portion W includes a region where the first and second thin film transistors TFT1 and TFT2 are formed, the gate lines GLn-1 and GLn, and the source lines DLm-1, DLm, and DLm + 1. ) Is formed in the formed area.

The partition part W defines pixel spaces corresponding to the first and second pixel parts in which the first and second pixel electrodes PE1 and PE2 are formed.

The color filter layer 220 is formed at a predetermined height in the pixel space defined by the partition wall portion W. The color filter layer 220 includes red, green and blue filter patterns 220a and 220b. In addition, the color filter layer 220 may further include a white filter pattern (not shown). The white filter pattern may be formed by overlapping the red, green, and blue filter patterns, or may not form the color filter layer by exposing the second base substrate 201.

The common electrode layer CE is formed on the color filter layer 220. The common electrode layer CE is formed of the transparent conductive material, and a common voltage is applied to the electrodes facing the first and second pixel electrodes PE1 and PE2. The transparent conductive material, for example, may be made of indium tin oxide (ITO), indium zinc oxide (IZO), amorphous indium tin oxide (a-ITO), or the like. .

The electrophoretic layer 240 includes a microcapsule 230 and a binder (not shown) that binds the microcapsules 230. The microcapsules 230 are filled in the pixel space formed by the partition wall portion W. The first and second pixel portions P1 and P2 are partitioned by the partition wall portion W, and the microcapsules 230 are formed at boundary portions of the first and second pixel portions P1 and P2. Accordingly, problems such as a decrease in reflectance and a decrease in color reproducibility that occur when the microcapsules 230 are disposed at the boundary may be prevented.

The microcapsules 230 include electrophoretic particles 231 and 232 charged with positive and negative charges. For example, the microcapsules 230 are white ink particles 231 charged with negative or positive charges, and black ink particles 232 charged with charges opposite to the white ink particles 231. ). For example, the white ink particles 231 are charged with a positive charge (+), and the black ink particles 212 are charged with a negative charge (−).

4A, 4B, and 4C are process diagrams for describing a method of manufacturing the color filter substrate illustrated in FIG. 3. 4A, 4B and 4C are cross-sectional views of the color filter substrate taken along the line II-II ′ of FIG. 3.

3 and 4A, the partition wall portion W corresponds to an area where the gate lines GLn-1 and GLn and the source lines DLm-1 and DLm are formed on the second base substrate 201. To form. The partition wall portion W includes a first partition wall W1 having a first height h1 and a second partition wall W2 having a second height h2 lower than the first height h1.

For example, the partition wall portion W formed in the source wiring region DLA includes a first partition wall W1 having a first height h1 and a second partition wall W2 having a second height h2. The second partition W2 is formed between the first partitions W1. The first height h1 corresponds to the height at which the electrophoretic layer 240 is formed, and the second height h2 corresponds to the height at which the color filter layers 220a and 220b are formed.

Referring to FIG. 4B, the color filter layers 220a and 220b are formed on the second base substrate 201 on which the partition portion W is formed using the ink jet unit IU. The color filter layers 220a and 220b are formed to have a thickness equal to the second height h2 of the second partition wall W2.

The color filter layers 220a and 220b of different colors formed in the pixel spaces adjacent to the color filter layers 220a and 220b by the first and second partitions W1 and W2 are not mixed.

Referring to FIG. 4C, the common electrode layer may be formed of a transparent conductive material on the second base substrate 201 having the color filter layers 220a and 220b formed to have a thickness equal to the second height h2 of the second partition W2. CE).

As the common electrode layer CE is formed on the second base substrate 201 where the color filter layers 220a and 220b filled with the second height h2 are formed, the common electrode layer CE is formed in the entire pixel spaces. Is formed in common. Therefore, a common voltage may be applied to the common electrode layer CE.

The electrophoretic layer 240 is formed by spraying the microcapsules 230 by ink jetting on the second base substrate 201 on which the common electrode layer CE is formed. The microcapsules 230 are filled by a first height h1 of the first partition wall W1. Preferably, the width d of the second partition wall W2 is smaller than the diameter of the microcapsules 230 to prevent the microcapsules 230 filled in adjacent pixel spaces from flowing to each other.

FIG. 5 is a cross-sectional view of the electrophoretic display device according to the second exemplary embodiment, taken along the line II ′ of FIG. 2.

2 and 5, the electrophoretic display includes a color filter substrate 200a including an opposing substrate 100 and an electrophoretic layer 240.

Since the counter substrate 100 is the same as the first embodiment of FIG. 3, a detailed description thereof will be omitted.

The color filter substrate 200a has a common electrode layer CE formed on the second base substrate 201. The partition wall portion W is formed on the second base substrate 201 on which the common electrode layer CE is formed. The partition wall portion W is formed at a uniform height. For example, the partition wall portion W is uniformly formed at the first height h1 shown in FIG. 4A. Color filter layers 220a and 220b are formed in the pixel spaces formed by the partition wall portion W by an ink jet method.

That is, the color filter substrate 200a has a common electrode layer CE between the second base substrate 201 and the color filter layer 220 as compared with the color filter substrate 200 according to the first embodiment of FIG. 3. Is formed. The electrophoretic layer 240 is formed by spraying microcapsules 230 in the ink jet method in the pixel spaces in which the color filter layers 220a and 220b are formed.

The microcapsules 230 are filled in the pixel space formed by the partition wall portion W. The first and second pixel portions P1 and P2 are partitioned by the partition wall portion W, and the microcapsules 230 are formed at boundary portions of the first and second pixel portions P1 and P2. As a result, the reflectance and color reproducibility can be improved.

6 is a cross-sectional view of the electrophoretic display device according to the third exemplary embodiment, taken along the line II ′ of FIG. 2.

2 and 6, the electrophoretic display includes a color filter substrate 300 and an opposing substrate 400 that faces the color filter substrate 300.

The color filter substrate 300 includes a first base substrate 301, a thin film transistor layer TL, a color filter layer 330, a pixel electrode layer PE, a partition wall portion W, and an electrophoretic layer 350. .

The first base substrate 301 includes a first surface and a second surface facing the first surface, and is formed of a transparent insulating material that transmits light L2 incident from the second surface.

The thin film transistor layer TL is formed on the first surface of the first base substrate 301. The thin film transistor layer TL includes gate lines GLn-1 and GLn extending in a first direction and source lines DLm-1, DLm, and DLm + extending in a second direction crossing the first direction. 1) and first and second thin film transistors TFT1 and TFT2 connected to the gate lines GLn-1 and GLn and the source lines DLm and DLm + 1.

Pixel portions P1 and P2 are defined in the first base substrate 301 by the gate lines GLn-1 and GLn and the source lines DLm-1, DLm, and DLm + 1. In detail, a first thin film transistor TFT1 connected to an n-th gate line GLn and an m-th source line DLm is formed in the first pixel portion P1.

The first thin film transistor TFT1 includes a first gate electrode GE connected to the n-th gate line GLn, a gate insulating layer 310 formed on the first gate electrode GE, and the gate insulating layer. A first channel portion CH formed on the 310, a first source electrode SE connected to the m-th source wiring DLm, a first drain electrode DE connected to the first pixel electrode PE1, and And a protective insulating layer 320 formed on the first source and first drain electrodes SE and DE.

A second thin film transistor TFT2 connected to the n-th gate line GLn and the m + 1th source line DLm + 1 is formed in the second pixel portion P2. Since the second thin film transistor TFT2 is formed in the same structure as the first thin film transistor TFT1 as shown in FIGS. 2 and 6, a detailed description thereof will be omitted.

The color filter layer 330 is formed on the thin film transistor layer TL and includes red, green, and blue filter patterns 330a, 330b, and 330c. Each color filter pattern is formed in a corresponding pixel portion.

The pixel electrode layer PE formed of a transparent conductive material is formed on the color filter layer 330. The transparent conductive material may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), amorphous indium tin oxide (a-ITO), or the like. . The pixel electrode layer PE is connected to the first thin film transistor TFT1 through the first contact hole CT1 and the second thin film transistor through the first pixel electrode PE1 and the second contact portion CT2. The second pixel electrode PE2 is electrically connected to the TFT2.

Preferably, the color filter layer 330 is formed on the thin film transistor layer TL corresponding to a region where the first and second pixel electrodes PE1 and PE2 are formed.

The partition portion W is formed on the color filter layer 330 corresponding to a region where the pixel electrode layer PE is not formed, that is, a region where the pixel electrodes PE1 and PE2 are formed.

The region where the partition wall portion W is formed is a light shielding region that blocks light, and the region where the partition wall portion W is not formed is a transmission region through which light passes. Preferably, the partition wall portion W includes a region where the first and second thin film transistors TFT1 and TFT2 are formed, the gate lines GLn-1 and GLn, and the source lines DLm-1, DLm, and DLm + 1. ) Is formed in the formed area.

The partition portion W forms pixel spaces corresponding to the first and second pixel portions P1 and P2.

The electrophoretic layer 350 includes microcapsules 340 having electrophoretic particles 341 and 342. The microcapsules 340 are filled in the pixel spaces formed by the partition wall portion W.

The first and second pixel portions P1 and P2 are partitioned by the partition wall portion W, and the microcapsules 340 are disposed at the boundary between the first and second pixel portions P1 and P2. Will not be. Accordingly, problems such as a decrease in reflectance and a decrease in color reproducibility that occur when the microcapsules 340 are disposed at the boundary may be prevented.

The opposing substrate 400 includes a second base substrate 401 and a common electrode layer CE. The second base substrate 401 may be formed of a material having flexibility. Preferably it is formed of a plastic material (PET) excellent in light transmittance, heat resistance, chemical resistance, mechanical strength and the like. The common electrode layer CE is formed of the transparent conductive material.

The opposing substrate 400 is attached to the color filter substrate 300 using a laminator (not shown).

7A, 7B, and 7C are process diagrams for describing a method of manufacturing the color filter substrate illustrated in FIG. 6.

2 and 7A, a thin film transistor layer TL is formed on the first base substrate 301. Specifically, a gate metal pattern including gate lines GLn-1 and GLn and a first gate electrode GE is formed as a gate metal layer on the first base substrate 301. A gate insulating layer 310 is formed on the first base substrate 301 on which the gate metal pattern is formed. A channel pattern including a first channel portion CH is formed on the gate insulating layer 310.

A source metal pattern including source wirings DLm-1, DLm, and DLm + 1, a first source electrode SE, and a first drain electrode DE is formed on the first base substrate 301 on which the channel pattern is formed. Form. A protective insulating layer 320 is formed on the first base substrate 301 on which the source metal pattern is formed. First and second thin film transistors TFT1 and TFT2 are formed on the first base substrate 301. The protective insulating layer 320 may not be formed.

2 and 7B, a color filter layer 330 is formed on the thin film transistor layer TL. The red filter pattern 330a and the green pixel portion correspond to the red pixel portion corresponding to the plurality of pixel portions defined by the gate lines GLn-1 and GLn and the source lines DLm and DLm + 1. Correspondingly, the blue filter pattern 330c is formed corresponding to the green filter pattern 330b and the blue pixel part.

The color filter layer 330 and the protective insulating layer 320 are patterned to form first and second contact holes CT1 and CT2. The pixel electrode layer PE is formed on the color filter layer 330 in which the first and second contact holes CT1 and CT2 are formed. The pixel electrode layer PE may include a first pixel electrode PE1 electrically connected to the first thin film transistor TFT1 through the first contact hole CT1 and the second contact hole through the second contact hole CT2. The second pixel electrode PE2 is electrically connected to the second thin film transistor TFT2.

2 and 7C, the partition wall portion W is formed on the first base substrate 301 on which the pixel electrode layer PE is formed. The partition portion W is formed on the color filter layer 330 in a region where the pixel electrode layer PE is not formed to form a pixel space corresponding to a region where the pixel electrode layer PE is formed. Preferably, the partition wall portion W includes a region where the first and second thin film transistors TFT1 and TFT2 are formed, the gate lines GLn-1 and GLn, and the source lines DLm-1, DLm, and DLm + 1. ) Is formed in the formed area.

A plurality of microcapsules 340 is filled in the pixel space formed by the partition portion W to form the electrophoretic layer 350. Each microcapsule 340 includes electrophoretic particles 341 and 342 charged with positive and negative charges.

FIG. 8 is a cross-sectional view of the electrophoretic display device according to the fourth exemplary embodiment, taken along line II ′ of FIG. 2.

Referring to FIG. 8, the electrophoretic display includes a color filter substrate 500 and an opposing substrate 400 facing the color filter substrate 500.

The color filter substrate 500 includes a first base substrate 301, a thin film transistor layer TL, a color filter layer 530, a pixel electrode layer PE, a partition wall portion W, and an electrophoretic layer 550. .

The first base substrate 501 includes a first surface and a second surface facing the first surface, and is formed of a transparent insulating material that transmits light L2 incident from the second surface.

The thin film transistor layer TL is formed on the first surface of the first base substrate 501. The thin film transistor layer TL includes gate lines GLn-1 and GLn extending in a first direction and source lines DLm-1, DLm, and DLm + extending in a second direction crossing the first direction. 1) and first and second thin film transistors TFT1 and TFT2 connected to the gate lines GLn-1 and GLn and the source lines DLm and DLm + 1.

Pixel portions P1 and P2 are defined in the first base substrate 301 by the gate lines GLn-1 and GLn and the source lines DLm-1, DLm, and DLm + 1. In detail, a first thin film transistor TFT1 connected to an n-th gate line GLn and an m-th source line DLm is formed in the first pixel portion P1.

The first thin film transistor TFT1 includes a first gate electrode GE connected to the n-th gate line GLn, a gate insulating layer 510 formed on the first gate electrode GE, and the gate insulating layer. A first channel portion CH formed on the 510, a first source electrode SE connected to the m-th source wiring DLm, a first drain electrode DE connected to the first pixel electrode PE1, and And a protective insulating layer 520 formed on the first source and first drain electrodes SE and DE.

A second thin film transistor TFT2 connected to the n-th gate line GLn and the m + 1th source line DLm + 1 is formed in the second pixel portion P2. Since the second thin film transistor TFT2 is formed in the same structure as the first thin film transistor TFT1 as shown in FIGS. 2 and 8, a detailed description thereof will be omitted.

The color filter layer 530 is formed on the second surface of the first base substrate 501. The color filter layer 530 includes red, green, and blue filter patterns 530a, 530b, and 530c. A passivation layer 535 may be formed on the color filter layer 530 to protect the color filter layer 530.

The pixel electrode layer PE is formed of a transparent conductive material on the thin film transistor layer TL. The transparent conductive material may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), amorphous indium tin oxide (a-ITO), or the like. . The pixel electrode layer PE is connected to the first thin film transistor TFT1 through the first contact hole CT1 and the second thin film transistor through the first pixel electrode PE1 and the second contact portion CT2. The second pixel electrode PE2 is electrically connected to the TFT2.

The partition portion W is formed on the thin film transistor layer TL in a region where the pixel electrode layer PE is not formed.

The area in which the partition wall portion W is formed is a light shielding area that blocks light, and the area in which the partition wall portion W is not formed is a transmission area through which light passes. Preferably, the partition wall portion W includes a region where the first and second thin film transistors TFT1 and TFT2 are formed, the gate lines GLn-1 and GLn, and the source lines DLm-1, DLm, and DLm + 1. ) Is formed in the formed area.

The partition portion W forms pixel spaces corresponding to the first and second pixel portions P1 and P2.

The electrophoretic layer 550 includes microcapsules 540 having electrophoretic particles 541 and 542. The microcapsules 540 are filled in the pixel spaces formed by the partition wall portion W.

The first and second pixel portions P1 and P2 are partitioned by the partition wall portion W, and the microcapsules 540 are disposed at the boundary between the first and second pixel portions P1 and P2. Will not be. Accordingly, problems such as a decrease in reflectance and a decrease in color reproducibility that occur when the microcapsules 540 are disposed at the boundary may be prevented.

The opposing substrate 400 includes a second base substrate 401 and a common electrode layer CE. The second base substrate 401 may be formed of a material having flexibility. Preferably it is formed of a plastic material (PET) excellent in light transmittance, heat resistance, chemical resistance, mechanical strength and the like. The common electrode layer CE is formed of the transparent conductive material.

The opposing substrate 400 is attached to the color filter substrate 500 using a laminator (not shown).

9A, 9B, and 9C are process diagrams for describing a method of manufacturing the color filter substrate illustrated in FIG. 8.

2 and 9A, the first base substrate 501 includes a first surface and a second surface opposite to the first surface. The color filter layer 530 is formed on the second surface of the first base substrate 501. The color filter layer 530 includes red, green, and blue filter patterns 530a, 530b, and 530c. A passivation layer 535 may be formed on the color filter layer 530 to protect the color filter layer 530.

2 and 9B, a thin film transistor layer TL is formed on the first surface of the first base substrate 501. Specifically, a gate metal pattern including gate lines GLn-1 and GLn and a first gate electrode GE is formed on the first base substrate 501 as a gate metal layer. A gate insulating layer 310 is formed on the first base substrate 501 on which the gate metal pattern is formed. A channel pattern including the first channel portion CH is formed on the gate insulating layer 510.

A source metal pattern including source wirings DLm-1, DLm, and DLm + 1, a first source electrode SE, and a first drain electrode DE is formed on the first base substrate 501 on which the channel pattern is formed. Form. A protective insulating layer 520 is formed on the first base substrate 501 on which the source metal pattern is formed. First and second thin film transistors TFT1 and TFT2 are formed on the first base substrate 501.

The pixel electrode layer PE is formed on the thin film transistor layer TL. The pixel electrode layer PE includes a first pixel electrode PE1 electrically connected to the first thin film transistor TFT1 through a first contact hole CT1, and the second thin film through a second contact hole CT2. The second pixel electrode PE2 is electrically connected to the transistor TFT2.

2 and 9C, the partition wall portion W is formed on the pixel electrode layer PE. The partition wall portion W is formed on the thin film transistor layer TL in a region where the pixel electrode layer PE is not formed to form a pixel space corresponding to a region where the pixel electrode layer PE is formed. Preferably, the partition wall portion W includes a region where the first and second thin film transistors TFT1 and TFT2 are formed, the gate lines GLn-1 and GLn, and the source lines DLm-1, DLm, and DLm + 1. ) Is formed in the formed area.

A plurality of microcapsules 540 is filled in the pixel space formed by the partition portion W to form the electrophoretic layer 550. Each microcapsule 540 includes electrophoretic particles 541, 542 charged with positive and negative charges.

As described above, according to the present invention, the partitions are formed on the color filter substrate for the electrophoretic display to form pixel spaces corresponding to the pixel portions, and the pixel portions are filled by filling microcapsules having electrophoretic particles in the pixel spaces. The microcapsules can be prevented from being placed at the boundary of the liver. Thereby, reflectance and color reproducibility can be improved.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. You will understand.

Claims (27)

A base substrate; A partition portion formed on the first surface of the base substrate, dividing the base substrate into a transmission region and a light shielding region, and forming a pixel space in the transmission region; A color filter layer formed in the transmission region; And An electrophoretic layer formed in the pixel space and including a capsule having electrophoretic particles; And An electrode layer formed of a transparent conductive material between the first surface and the electrophoretic layer, The color filter layer is formed in the pixel space, the color filter substrate is formed between the first surface and the electrode layer. delete delete delete delete The color filter substrate of claim 1, further comprising a thin film transistor layer formed between the first surface and the electrode layer. The method of claim 6, wherein the thin film transistor layer A gate metal pattern including gate wirings and a gate electrode of the thin film transistor; And And a source metal pattern including source lines extending to intersect the gate lines and a source and a drain electrode of the thin film transistor. The color filter substrate of claim 7, wherein the thin film transistor layer further comprises a protective insulating layer formed on the source metal pattern. The color filter substrate of claim 7, wherein the electrode layer comprises pixel electrodes electrically connected to a plurality of thin film transistors. The color filter substrate of claim 9, wherein the color filter layer is formed on the thin film transistor layer corresponding to a region where the pixel electrodes are formed. The color filter substrate of claim 10, wherein the partition wall is formed on the color filter layer between regions in which the pixel electrodes are formed. The color filter substrate of claim 9, wherein the color filter layer is formed on a second surface of the base substrate facing the first surface corresponding to a region where the pixel electrode is formed. The color filter substrate of claim 12, wherein the partition portion is formed on the thin film transistor layer between regions where the pixel electrodes are formed. A partition portion formed on the first surface of the first base substrate and dividing the first base substrate into a transmission region and a light shielding region to form a pixel space in the transmission region, a color filter layer formed in the transmission region, and formed in the pixel space And a color filter substrate including an electrophoretic layer including a capsule having electrophoretic particles and a first electrode layer formed of a transparent conductive material between the first surface and the electrophoretic layer; And A counter substrate coupled to the color filter substrate; The color filter layer is formed in the pixel space, the electrophoretic display device formed between the first surface and the electrode layer. delete The electrophoretic display of claim 14, wherein the opposing substrate comprises a second electrode layer facing the first electrode layer. delete delete delete The electrophoretic display of claim 14, wherein the color filter substrate further comprises a thin film transistor layer formed between the first surface and the first electrode layer. The thin film transistor layer of claim 20, wherein the thin film transistor layer A gate metal pattern including gate wirings and a gate electrode of the thin film transistor; And And a source metal pattern including source lines extending to intersect the gate lines and a source and a drain electrode of the thin film transistor. The electrophoretic display of claim 21, wherein the thin film transistor layer further comprises a protective insulating layer formed on the source metal pattern. The electrophoretic display of claim 21, wherein the first electrode layer comprises pixel electrodes electrically connected to a plurality of thin film transistors. The electrophoretic display of claim 23, wherein the color filter layer is formed on the thin film transistor layer corresponding to a region where the pixel electrodes are formed. 25. The electrophoretic display of claim 24, wherein the partition portion is formed on the color filter layer between regions where the pixel electrodes are formed. The electrophoretic display of claim 23, wherein the color filter layer is formed on a second surface of the first base substrate facing the first surface corresponding to a region where the pixel electrodes are formed. 27. The electrophoretic display of claim 26, wherein the partition portion is formed on the thin film transistor layer between regions where the pixel electrodes are formed.

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