KR101298166B1 - 전원 장치 - Google Patents

전원 장치 Download PDF

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Publication number
KR101298166B1
KR101298166B1 KR1020117002275A KR20117002275A KR101298166B1 KR 101298166 B1 KR101298166 B1 KR 101298166B1 KR 1020117002275 A KR1020117002275 A KR 1020117002275A KR 20117002275 A KR20117002275 A KR 20117002275A KR 101298166 B1 KR101298166 B1 KR 101298166B1
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KR
South Korea
Prior art keywords
discharge circuit
potential
power supply
discharge
electrode
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KR1020117002275A
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English (en)
Korean (ko)
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KR20110027819A (ko
Inventor
요시쿠니 호리시타
시노부 마츠바라
아쯔시 오노
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가부시키가이샤 알박
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Dc-Dc Converters (AREA)
KR1020117002275A 2008-06-30 2009-06-17 전원 장치 Active KR101298166B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008170807A JP5500794B2 (ja) 2008-06-30 2008-06-30 電源装置
JPJP-P-2008-170807 2008-06-30
PCT/JP2009/060989 WO2010001724A1 (ja) 2008-06-30 2009-06-17 電源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137013816A Division KR20130080055A (ko) 2008-06-30 2009-06-17 전원 장치

Publications (2)

Publication Number Publication Date
KR20110027819A KR20110027819A (ko) 2011-03-16
KR101298166B1 true KR101298166B1 (ko) 2013-08-21

Family

ID=41465825

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117002275A Active KR101298166B1 (ko) 2008-06-30 2009-06-17 전원 장치
KR1020137013816A Ceased KR20130080055A (ko) 2008-06-30 2009-06-17 전원 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137013816A Ceased KR20130080055A (ko) 2008-06-30 2009-06-17 전원 장치

Country Status (6)

Country Link
US (1) US20110120861A1 (https=)
JP (1) JP5500794B2 (https=)
KR (2) KR101298166B1 (https=)
CN (1) CN102076878B (https=)
TW (1) TW201006317A (https=)
WO (1) WO2010001724A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9039871B2 (en) * 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
KR101421483B1 (ko) * 2010-08-18 2014-07-22 가부시키가이샤 알박 직류 전원 장치
US9287098B2 (en) 2012-11-01 2016-03-15 Advanced Energy Industries, Inc. Charge removal from electrodes in unipolar sputtering system
US9129776B2 (en) * 2012-11-01 2015-09-08 Advanced Energy Industries, Inc. Differing boost voltages applied to two or more anodeless electrodes for plasma processing
US9226380B2 (en) 2012-11-01 2015-12-29 Advanced Energy Industries, Inc. Adjustable non-dissipative voltage boosting snubber network
JP2022080674A (ja) * 2020-11-18 2022-05-30 東京エレクトロン株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133110A (ja) 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
DE4446532A1 (de) * 1994-12-24 1996-06-27 Bosch Gmbh Robert Stromversorgungsschaltung
JP3028292B2 (ja) * 1995-10-20 2000-04-04 株式会社ハイデン研究所 正負パルス式高電圧電源
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
CN1223698C (zh) * 1997-02-20 2005-10-19 芝浦机械电子装置股份有限公司 用于溅射的电源装置和使用该装置的溅射设备
US7247221B2 (en) * 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
EP2102889B1 (en) * 2006-12-12 2020-10-07 Evatec AG Rf substrate bias with high power impulse magnetron sputtering (hipims)

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133110A (ja) 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置

Also Published As

Publication number Publication date
WO2010001724A1 (ja) 2010-01-07
CN102076878B (zh) 2013-01-16
TW201006317A (en) 2010-02-01
CN102076878A (zh) 2011-05-25
JP5500794B2 (ja) 2014-05-21
KR20110027819A (ko) 2011-03-16
US20110120861A1 (en) 2011-05-26
JP2010007162A (ja) 2010-01-14
KR20130080055A (ko) 2013-07-11

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