KR101247295B1 - Apparatus for forming thin film of tape substrate and manufacture method the same - Google Patents

Abstract

PURPOSE: An apparatus for forming a thin film on a tape substrate and a method for forming the thin film using the same are provided to prevent the leak of reaction gas by covering a rotary drum with a gas supply member. CONSTITUTION: A rotary drum(30) is installed in a vacuum chamber. The rotary drum rotates in order to wind a tape substrate. A gas supply member(40) faces the tape substrate. The gas supply member supplies source gas and reaction gas. A reciprocating motion part(60) reciprocates the gas supply member. [Reference numerals] (48) Reaction gas supply source

Description

Thin film forming apparatus of tape substrate and thin film forming method using the same {APPARATUS FOR FORMING THIN FILM OF TAPE SUBSTRATE AND MANUFACTURE METHOD THE SAME}

The present invention relates to a thin film forming apparatus of a tape substrate and a thin film forming method using the same. More particularly, the reaction gas is reciprocated in a direction orthogonal to the tape moving direction on a surface facing the tape substrate wound on a rotating drum. The present invention relates to a thin film forming apparatus for a tape substrate capable of mass-producing high temperature superconducting wires by alternately supplying and source gas, and a thin film forming method using the same.

In general, a high temperature superconducting wire is produced by forming a high temperature superconducting thin film while reacting three metals, for example, Cu, Ba, and Y, which are components of a source gas, with oxygen, which is a reaction gas, on a metal substrate.

Methods of fabricating materials such as high temperature superconducting thin films include pulsed laser deposition (PLD), metal organic chemical vapor deposition (MOCVD), metal organic deposition (MOD), and co-evaporation. Among these methods, the co-evaporation method is characterized by low cost of raw materials and fast manufacturing speed.

Since the thin film has a pressure of about 10 milliTorr in the reaction gas, for example, oxygen, the vapor of the metallic material does not approach the surface of the substrate under such gas pressure. Therefore, deposition should be carried out at low gas pressure and reaction at high gas pressure. If the substrate is a very long tape, the simultaneous deposition method requires a specially designed deposition apparatus and method to satisfy these conditions.

In order to solve this problem, Korean Patent Application Publication No. 10-1055611 proposes an improved tape substrate thin film forming apparatus compared to the existing configuration by the present applicant.

Existing tape substrate thin film forming apparatus is difficult to manufacture because the connection configuration between the supply wheel and the recovery wheel, and the device configuration for alternately supplying the reaction gas and the source gas.

In addition, the conventional tape substrate thin film forming apparatus may be manufactured when the length of the tape substrate is about several hundred meters, but there is a problem that it is difficult to deposit a thin film on a metal tape substrate having a width of several kilometers and several hundred millimeters.

Therefore, there is a need to improve this.

The present invention has been created by the necessity as described above, by alternately supplying the reaction gas and the source gas to the surface of the substrate by reciprocating in the direction crossing the tape substrate moving direction on the surface facing the tape substrate wound on the rotating drum It is an object of the present invention to provide a thin film forming apparatus of a tape substrate capable of mass-producing high temperature superconducting wires and a thin film forming method using the same.

In addition, the present invention is capable of freely adjusting the entire length of the gas supply member for alternately supplying the reaction gas and the source gas, thereby forming a thin film of the tape substrate which makes it possible to deposit a thin film on a metal tape substrate having a width of several hundred millimeters. It is an object to provide a device and a method for forming a thin film using the same.

In addition, the present invention provides a thin film forming apparatus and a thin film forming method using a tape substrate that can minimize the leakage of the reaction gas by reducing the gap by configuring the gas supply member to surround the rotating drum in accordance with the curvature of the rotating drum The purpose is to provide.

In order to achieve the above object, a thin film forming apparatus of a tape substrate according to an embodiment of the present invention, a vacuum chamber; A rotating drum installed in the vacuum chamber and rotating to wind a tape substrate transferred from a supply reel to a recovery reel, and having a heating member disposed therein; A gas supply member disposed on an opposite surface of the tape substrate wound around the rotating drum, and configured to supply a source gas and a reaction gas by forming a source gas supply passage and a reaction gas supply passage; And a reciprocating driving part configured to reciprocate the gas supply member in a direction parallel to the rotation axis of the rotary drum.

In addition, the heating member is fixedly installed in the space formed inside the rotating drum, characterized in that it is installed in a state that does not interfere with the connecting shaft for supporting the rotating shaft and the rotating shaft.

In addition, the source gas supply passage and the reaction gas supply passage is characterized in that the alternately formed in the longitudinal direction of the gas supply member.

In addition, the front surface of the gas supply member is characterized in that it is formed to have a curved surface close to the curved surface of the rotating drum.

In addition, the source gas supply passage is characterized in that the high partial pressure source gas supplied from the evaporator is formed through, before and after the attachment to the tape substrate.

In addition, the source gas supply passage is characterized in that it is integrally connected to the edge of both sides of the gas supply member long.

In addition, the rear side of the reaction gas supply passage is characterized in that the reaction gas supply tube which is flexiblely connected to the rear side of the gas supply member for supplying the reaction gas from the reaction gas supply source.

In addition, the front surface of the gas supply member is connected to the reaction gas supply passage, characterized in that to form a reaction gas supply groove formed to have a wide space.

Also. The reaction gas supply groove may further include an auxiliary heater to provide the tape substrate with a temperature corresponding to the heating member on the tape substrate.

In addition, the adjacent position of the reaction gas supply groove is characterized in that the differential exhaust passage for discharging a part of the reaction gas introduced into the reaction gas supply groove to the outside.

A thin film forming method using a thin film forming apparatus of a tape substrate according to an embodiment of the present invention, supplying a tape substrate using a supply reel; Winding the tape substrate with a rotating drum; Reciprocatingly driving a gas supply member disposed on an opposite surface of the tape substrate wound on the rotary drum in a direction parallel to the axis of rotation of the rotary drum using a reciprocating drive unit; Depositing a thin film on the surface of the tape substrate as the source gas and the reaction gas are alternately supplied to the surface of the tape substrate through the source gas supply passage and the reaction gas supply passage formed in the gas supply member; And transferring the tape substrate discharged from the rotating drum and winding it on a recovery reel.

In addition, an oxygen content adjusting device is installed between the thin film deposition step and the tape substrate recovery step, further comprising a tape substrate post-treatment step of controlling a source gas component ratio of the thin film deposited on the tape substrate.

As described above, the thin film forming apparatus of the tape substrate and the thin film forming method using the same according to the present invention, the reaction by reciprocating movement in the direction crossing the tape substrate moving direction on the surface facing the tape substrate wound on the rotating drum By alternately supplying gas and source gas to the substrate surface, it is possible to mass produce high-temperature superconducting wires.

In addition, the present invention can freely adjust the entire length of the gas supply member for alternately supplying the reaction gas and the source gas, thereby making it possible to deposit a thin film on a metal tape substrate having a width of several hundred millimeters.

In addition, the present invention is configured to surround the rotating drum according to the curvature of the rotating drum to reduce the gap, it is possible to minimize the leakage of the reaction gas.

1 is a schematic diagram of a thin film forming apparatus of a tape substrate according to an embodiment of the present invention;
2 is a cross-sectional view taken along line AA of FIG.
Figure 3 is a front perspective view of the main portion of the gas shift supply unit according to an embodiment of the present invention,
4 is a reciprocating operation state of the gas shift supply unit according to FIG.
5 is a flowchart of a thin film forming method using a thin film forming apparatus of a tape substrate according to an embodiment of the present invention.

Hereinafter, a thin film forming apparatus and a thin film forming method using the same according to an embodiment of the present invention with reference to the accompanying drawings.

In this process, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation. In addition, terms to be described below are terms defined in consideration of functions in the present invention, which may vary according to the intention or convention of a user or an operator. Therefore, definitions of these terms should be made based on the contents throughout the specification.

1 is a schematic view of a thin film forming apparatus of a tape substrate according to an embodiment of the present invention, Figure 2 is a cross-sectional view of the AA line of Figure 1, Figure 3 is a gas shift supply unit according to an embodiment of the present invention 4 is a front perspective view of the main part, and FIG. 4 is a reciprocating operation state diagram of the gas shift supply unit according to FIG. 2.

1 to 4, the thin film forming apparatus of the tape substrate according to an embodiment of the present invention, the vacuum chamber 10, the rotating drum 30, the gas supply member 40 and the reciprocating drive unit 60 Include.

The vacuum chamber 10 is a component for providing a vacuum to the thin film forming apparatus of the tape substrate 12 of the present invention, may be formed integrally or the upper vacuum chamber and the lower vacuum chamber can be separated.

The rotary drum 30 is installed in the vacuum chamber 10, rotates to wind the tape substrate 12 transferred from the supply reel 20 to the recovery reel 22, and a heating member 36 is provided therein. do.

The tape substrate 12 applies a metal tape substrate having a length of several kilometers and a width of several hundred millimeters.

The supply reel 20 is wound with a tape substrate 12 on which a thin film is not deposited on one side thereof, and the recovery reel 22 is supplied alternately with a source gas and a reaction gas described below to deposit a thin film. (12) is wound.

A guide roller 24 for guiding the tape substrate 12 is provided between the supply reel 20 and the rotating drum 30 and between the rotating drum 30 and the recovery reel 22.

The supply reel 20 and the recovery reel 22 are driven by a driving unit (not shown).

The heating member 36 is fixedly installed in the space 38 formed inside the rotating drum 30 and is installed in a state of not interfering with the rotating shaft 32 and the connecting shaft 34 supporting the rotating shaft 32. . Although the installation structure of the heating member 36 has not been described in detail and is briefly illustrated as an example, the heating member 36 may be installed in a state in which interference is prevented on the rotation shaft 32 and the connection shaft 34 using various connection structures.

The rotating shaft 32 is connected to the driving unit 33 to rotate. The driving unit 33 may apply a driving means such as a rotating motor.

The gas supply member 40 is disposed on an opposite surface of the tape substrate 12 wound on the rotating drum 10, and a plurality of source gas supply passages 42 and reaction gas supply passages 44 are formed to form a plurality of source gases. Supply the reaction gas, respectively.

The source gas supply passage 42 and the reaction gas supply passage 44 are alternately formed in the longitudinal direction of the gas supply member 40.

That is, the source gas supply passage 42, the reaction gas supply passage 44, the source gas supply passage 42, the reaction gas supply passage 44, etc. are alternately formed in the longitudinal direction of the gas supply member 40 alternately. will be. Of course, in some cases, the source gas supply passage 42 and the reaction gas supply passage 44 may be irregularly formed.

The reciprocating drive unit 60 reciprocates the gas supply member 40 in a direction parallel to the axis of rotation of the rotary drum 32. That is, the reciprocating drive unit 60 operates in a direction intersecting with the moving direction of the tape substrate 12 wound on the rotary drum 30.

It is preferable that the reciprocating drive unit 60 be driven at a sufficiently high speed by applying at least one of a cylinder, a solenoid and other reciprocating drive means. The gas supply member 40 reciprocally driven by the reciprocating drive unit 60 may include a guide member such as an LM guide for safe and accurate guidance.

The periphery of the rotating drum 30 and the gas supply member 40 is a region where a thin film is formed. Source gas vapor and reactant gas of the raw material deposited to the region where the thin film is formed are alternately supplied. The reason for the alternating supply is that when the partial pressure of the reaction gas requires a value as high as 10 milliTorr, it is impossible to supply the source gas under such partial pressure.

The front surface of the gas supply member 40 is formed to have a curved surface close to the curved surface of the rotary drum (30). That is, by forming the front curvature of the gas supply member 40 in accordance with the curvature of the outer circumferential surface of the rotating drum 30, the source gas and the reactive gas supplied to the source gas supply passage 42 and the reaction gas supply passage 44, respectively, It can reduce leakage into gaps.

The source gas supply passage 42 is formed before and after the high partial pressure source gas supplied from the evaporator 43 is attached to the tape substrate 12.

The source gas supply passage 42 is integrally connected to the edges of both sides of the gas supply member 40 in a long way.

The source gas contains metals such as copper (Cu), barium (Ba), iridium (Y), and the like, and an evaporator 43 is provided under the vacuum chamber 10 to evaporate the source gas raw metal to be injected at high pressure. It adheres to the tape board | substrate 12 by doing this.

Evaporator 43 is a general configuration, the evaporator may be used. The evaporator is located below the thin film deposition section, and several evaporators can be used for one element component to distribute the deposition evenly.

Evaporators are particularly preferred for use with effusion cells. The outflow evaporator can stabilize the amount of evaporation by keeping the temperature of the evaporator constant.

As the heating method of the evaporation device 43, a heating method by electric resistance, a heating method by an electron beam, a heating method by a magnetic induction method, a heating method by a laser, or the like may be used.

In order to correct the evaporation rate by measuring the source gas vapor supply rate of each metal, an evaporation amount measuring device 45 is installed to maintain an accurate and constant element ratio in the thin film. The evaporation amount is measured by the resonance frequency of the quartz vibrator or Optical absorption can also be achieved.

The rear side of the reaction gas supply passage 44 is provided with a reaction gas supply tube 46 which is flexibly connected to the rear side of the gas supply member 40 and supplies the reaction gas from the reaction gas supply source 48. .

Oxygen is mainly used as the reaction gas, the reaction gas source 48 may be a storage means such as a storage tank for storing the oxygen gas.

The front surface of the gas supply member 40 is connected to the reaction gas supply passage 44, and forms a reaction gas supply groove 50 formed to have a wide space.

The reaction gas supply groove 50 is preferably formed to be open at right angles to both sides at the end side of the reaction gas supply passage 44.

The reaction gas supply groove 50 is in a state in which the reaction gas passing through the reaction gas supply source 48, the reaction gas supply tube 46, and the reaction gas supply passage 44 is temporarily stored, and at this time, the evaporator 43 The evaporated source gas injected into the tape passes through the source gas supply passage 42 of the gas supply member 40 to the tape substrate 12, and the gas supply member 40 is reciprocated by the reciprocating drive unit 60. Accordingly, the reaction gas stored in the reaction gas supply groove 50 is in contact with the surface of the tape substrate 12 to which the source gas is attached to form a thin film.

That is, while the tape substrate 12 is wound around the rotating drum 30, the gas supply member 40 repeatedly reciprocates, and the source gas and the reactant gas are alternately contacted with the surface of the tape substrate 12. The metal thin film is continuously deposited.

The reaction gas supply groove 50 further includes an auxiliary heater 52 to provide the tape substrate 12 with a similar temperature corresponding to the heating member 36 on the opposite side of the tape substrate 12.

The auxiliary heater 52 is preferably installed at the corner of the reaction gas supply groove 50 located at the end side of the reaction gas supply passage 44. Although not shown, a method of supplying power to the auxiliary heater 52 may be applied in an appropriate manner.

In the adjacent position of the reaction gas supply groove 50 may be provided with a differential exhaust passage 54 for discharging a portion of the reaction gas introduced into the reaction gas supply groove 50 to the outside.

The differential exhaust passage 54 is connected to a differential exhaust device, not shown, to lower the partial pressure of the reaction gas around the reaction gas supply groove 50.

In the differential exhaust passage 54, when the high-pressure reaction gas supplied from the reaction gas supply groove 50 leaks into the vacuum chamber 10, the partial pressure of gas is increased so that the source gas supplied from the evaporator 43 is the source gas supply passage. Since it is difficult to maintain the deposition material component ratio by interfering with reaching the tape substrate 12 via the 42, it serves to prevent this.

An oxygen content adjusting device 70 is installed between the rotating drum 30 and the recovery reel 22 to adjust the source gas component ratio of the thin film deposited on the tape substrate 12.

Oxygen content control device 70 is provided with a post-heat treatment device, the reaction gas is preferably supplied at a high partial pressure.

Hereinafter, a thin film forming method using a thin film forming apparatus of a tape substrate according to an embodiment of the present invention will be described with reference to the accompanying drawings.

5 is a flowchart illustrating a thin film forming method using a thin film forming apparatus of a tape substrate according to an embodiment of the present invention.

1 to 5, a thin film forming method using a thin film forming apparatus of a tape substrate according to an embodiment of the present invention, the tape substrate supply step (S10), tape substrate moving step (S20), gas supply member reciprocating Driving step (S30), thin film deposition step (S40), the tape substrate post-processing step (S50) and the tape substrate recovery step (S60).

The tape substrate supplying step S10 is a step of supplying the tape substrate 12 on which the thin film is not deposited by using the guide roller 24 of the supply reel 20.

Tape substrate moving step (S20) is a step of winding the tape substrate 12 to the rotating drum 30 to transfer. At this time, the heating member 36 is provided in the rotating drum 30 to provide an appropriate heating temperature.

Gas supply member reciprocating drive step (S30) is a gas supply member 40 disposed on the opposite surface of the tape substrate 12 wound on the rotary drum 30 of the rotary drum 30 by using the reciprocating drive unit 60 It reciprocates in the direction parallel to the rotating shaft 32. As shown in FIG.

In the thin film deposition step S40, the source gas and the reactant gas are alternately supplied to the surface of the tape substrate 12 through the source gas supply passage 42 and the reaction gas supply passage 44 formed in the gas supply unit 40. (12) A step of depositing a thin film on the surface.

In the tape substrate recovery step S60, the tape substrate 12 on which the thin film discharged from the rotating drum 30 is deposited is transferred through the guide roller 24 and wound around the recovery reel 22.

An oxygen content adjusting device 70 is installed between the thin film deposition step S40 and the tape substrate recovery step S50 to adjust the source gas component ratio of the thin film deposited on the tape substrate 12 (S50). Is further included.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. I will understand.

Therefore, the true technical protection scope of the present invention will be defined by the claims below.

10: vacuum chamber 20: supply reel
22: recovery reel 30: rotating drum
32: rotating shaft 34: connecting shaft
36: heating member 40: gas supply member
42: source gas supply passage 44: reaction gas supply passage
46: reaction gas supply tube 50: reaction gas supply groove
52: auxiliary heater 60: reciprocating drive unit
S10 to S60: steps of forming a thin film of the tape substrate according to the present invention

Claims (12)

A vacuum chamber;
A rotating drum installed in the vacuum chamber and rotating to wind a tape substrate transferred from a supply reel to a recovery reel, and having a heating member disposed therein;
A gas supply member disposed on an opposite surface of the tape substrate wound around the rotating drum, and configured to supply a source gas and a reaction gas by forming a source gas supply passage and a reaction gas supply passage; And
And a reciprocating driving unit configured to reciprocate the gas supply member in a direction parallel to the rotation axis of the rotary drum.
The method of claim 1,
The heating member is fixed to the space portion formed inside the rotating drum, the thin film forming apparatus of the tape substrate, characterized in that installed in a state that does not interfere with the connecting shaft for supporting the rotating shaft and the rotating shaft.
The method of claim 1,
And the source gas supply passage and the reaction gas supply passage are alternately formed in the longitudinal direction of the gas supply member.
The method of claim 1,
And a front surface of the gas supply member is formed to have a curved surface close to the curved surface of the rotating drum.
The method of claim 1,
The source gas supply passage is a thin film forming apparatus of the tape substrate, characterized in that the high and partial pressure source gas supplied from the evaporator is formed before and after penetrating to the tape substrate.
The method according to claim 1 or 5,
The source gas supply passage is a thin film forming apparatus of the tape substrate, characterized in that formed integrally connected to both edges of the side of the gas supply member.
The method of claim 1,
And a reaction gas supply tube flexiblely connected to a rear side of the gas supply member at a rear side of the reaction gas supply passage and supplying a reaction gas from a reaction gas supply source.
The method of claim 1,
And a reaction gas supply groove connected to the reaction gas supply passage on the front surface of the gas supply member, the reaction gas supply groove being formed to have a wide space.
The method of claim 8,
The reaction gas supply groove further comprises an auxiliary heater to provide the tape substrate with a temperature corresponding to the heating member on the tape substrate.
The method of claim 1,
And a differential exhaust passage for discharging a portion of the reaction gas introduced into the reaction gas supply groove to an outside of the reaction gas supply groove.
Supplying a tape substrate using a supply reel;
Winding the tape substrate with a rotating drum;
Reciprocatingly driving a gas supply member disposed on an opposite surface of the tape substrate wound on the rotary drum in a direction parallel to the axis of rotation of the rotary drum using a reciprocating drive unit;
Depositing a thin film on the surface of the tape substrate as the source gas and the reaction gas are alternately supplied to the surface of the tape substrate through the source gas supply passage and the reaction gas supply passage formed in the gas supply member; And
The thin film forming method using the thin film forming apparatus of the tape substrate, characterized in that it comprises the step of transferring the tape substrate discharged from the rotating drum to the recovery reel.
12. The method of claim 11,
Between the thin film deposition step and the tape substrate recovery step, an oxygen content control device is installed, further comprising a tape substrate post-processing step of adjusting the source gas component ratio of the thin film deposited on the tape substrate Thin film forming method using the forming apparatus.

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