KR101240342B1 - Tunable vertical-cavity surface-emitting laser and fabricating method the same - Google Patents

Abstract

Surface emitting lasers are used as light sources for short and medium distance optical connections and optical communication. Recently, the necessity of optical connection and optical communication using light sources of various wavelengths is increasing for large data processing and transmission. In the case of using a light source using one wavelength, in order to increase the capacity, a method of increasing the modulation speed of the optical connection and the optical communication light source should be used, but in this case, there is a limitation in improving the speed and the connection and transmission distance according to the increase in speed There is a drawback to shrinking. On the other hand, in the case of using the optical connection and the optical communication of multiple wavelengths, the capacity can be increased by increasing the channel in the transmission speed of each wavelength and can be utilized in various areas. Therefore, the need for a light source capable of wavelength adjustment according to the needs as a light source for multiplex optical connection and optical communication is increasing. The present invention provides a highly efficient wavelength-controlled surface-emitting laser device and a method for manufacturing the same, characterized in that the oscillation wavelength is controlled by controlling the refractive index and reflectance and the reflection phase through the application of a current to the mirror layer with a wavelength-controlled surface-emitting laser device.

Description

Wavelength-controlled surface-emitting laser device and manufacturing method thereof {Tunable vertical-cavity surface-emitting laser and fabricating method the same}

The present invention relates to a wavelength-controlled surface-emitting laser, a high-efficiency wavelength-controlled surface-emitting laser device characterized in that it is possible to adjust the oscillation wavelength by adjusting the refractive index and reflectance and the reflection phase through the application of a current to the mirror layer and its manufacturing method It is about.

Surface-emitting lasers are used as light sources for short / mid-range communications, and their applications are rapidly increasing in optical connections, optical sensors, and optical communications. In particular, the high fiber-coupling efficiency of surface-emitting lasers, low unit cost by wafer-based fabrication process, low mounting cost, low electrical power consumption, and two-dimensional array Due to its characteristics, it is expected to quickly become a light source for next generation optical communication and signal processing. In particular, in recent years, there is an increasing need for optical connection and optical communication using light sources of various wavelengths for processing and transmitting large data. In the case of using a light source using one wavelength, the method of increasing the modulation speed of the optical connection and the optical communication light source should be used to increase the capacity. There are disadvantages. Therefore, in the case of using the optical connection and the optical communication of multiple wavelengths, the capacity can be increased by increasing the transmission speed and channel of each wavelength, thereby enabling the transmission and processing of large-capacity signals over a long distance. However, since an individual light source having respective wavelength characteristics must be manufactured and applied for optical connection and optical communication using various wavelengths, it is difficult to manufacture a light source having respective wavelengths, and it is difficult to raise or replace the light source. In addition, since the wavelength is fixed in the overall network configuration, there is a disadvantage in that a flexible network is not formed. In order to compensate for such a disadvantage, a light source having a wavelength of various wavelengths can be controlled by using a single light source.

In the conventional wavelength-controlled surface-emitting laser device and a method of manufacturing the same, a thin air layer is formed by partially etching between the thin upper mirror layer and the upper current injection layer, and applying a voltage therebetween to provide the mirror layer and the upper current injection layer. There is a method of controlling the resonator distance by adjusting the space. In this method, a part is attached to the upper contact layer to support a thin film having an upper mirror layer and an etch for forming a thin air layer in a region where light is emitted to adjust the resonance distance to an applied voltage. Therefore, it is difficult to produce a micro space of about a few microns and to maintain the difference of the space, it is difficult to secure the reproducibility and yield accordingly. In addition, since the thin upper mirror layer is floating in the air, there is a difficulty in processing and mounting the device.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a structure and a manufacturing method that can be applied to a wavelength-controlled surface emission laser in various wavelength ranges, the current applied to the upper mirror layer It is to provide a wavelength-controlled surface emitting laser device and a method of manufacturing the same that can adjust the oscillation wavelength of the surface-emitting laser by adjusting the reflectance and the reflection phase of the mirror layer through.

In order to achieve the above object, the present invention is a structure for adjusting the reflectance and the reflection phase of the upper mirror layer by applying a current to the upper wavelength control device to manufacture the upper wavelength control device having a general device thickness, rather than a thin film, the lower wavelength control The present invention provides a reproducible laser device and a method of manufacturing the same, which are fabricated using a device and a stable eutectic bonding method, and have no instability due to resonance distance control.

Specifically, the present invention provides a wavelength control surface emission laser device comprising: a lower mirror layer for reflection and an active layer for gain, and a lower wavelength control device for emitting light through current injection; An upper wavelength control element composed of an upper mirror layer and configured to adjust the reflectance and the reflection phase of the mirror layer by applying current; Is bonded to each other to emit light to the lower wavelength control element, and to control the wavelength by adjusting the reflectance and the reflection phase through the upper wavelength control element.

More specifically, the present invention is an active layer formed of a lower mirror layer and a quantum well layer consisting of a semiconductor Bragg reflector (DBR) sequentially stacked on a semiconductor substrate, a current injection layer for current injection on the active layer, the current injection layer A lower wavelength control element composed of a semiconductor on the lower layer and including a limiting layer for forming a current limiting layer, and an upper contact layer composed of a semiconductor doped on the limiting layer; It consists of an upper mirror layer and the structure of the upper wavelength control element that the reflectance and the reflection phase of the mirror layer through the application of the current is bonded to each other to emit light to the lower wavelength control element, and reflectance through the upper wavelength control element and The present invention provides a wavelength controlled surface emitting laser device capable of controlling wavelengths by adjusting a reflection phase.

In the present invention, after etching or oxidizing a part of the upper contact layer and the limiting layer of the lower wavelength control element to form an insulating layer for limiting the current in a part of the limiting layer to maintain the insulation stably and have an effective current flow A dielectric insulating layer for insulating between electrodes is formed, an upper electrode pad for wavelength control is formed by contacting the upper electrode and the upper wavelength adjusting element on the upper contact layer, and a lower electrode is connected to the rear surface of the semiconductor substrate. Allow current to be injected.

In addition, an antireflection layer is formed on the upper contact layer to reduce reflection between the upper contact layer and the air facing the air layer, and a contact bump is formed for bonding with the upper wavelength control element. And forming a dielectric insulating layer for insulating between electrodes on the lower mirror layer of the upper wavelength adjusting element, forming a lower electrode for adjusting wavelength, and reducing reflection between air on a part of the lower mirror layer and a part behind the substrate. To form an anti-reflection layer, and to form a top electrode for wavelength control on the back of the substrate. In addition, the contact bump of the upper wavelength control element is used to have a structure bonded to the lower electrode of the lower wavelength control element.

Therefore, a current is partially applied through the upper electrode pad for adjusting the lower wavelength adjusting element, the lower electrode of the upper wavelength adjusting element and the upper electrode of the upper wavelength adjusting element to adjust the reflectance and the reflection phase of the upper wavelength adjusting element. The wavelength-controlled oscillation characteristic of the surface emitting laser having wavelength control is independently achieved by the structure in which the light gained by the current applied between the upper electrode and the lower electrode for the current injection of the control element.

The wavelength-controlled surface-emitting laser of the present invention relates to a surface-emitting laser structure and a manufacturing method characterized by controlling the oscillation wavelength by changing the reflectance and the reflection phase of the mirror layer by applying a current, and the wavelength-controlled surface emission in all wavelength ranges It can be used as a laser device manufacturing method.

1A and 1B show the cross-sectional structure of the wavelength-controlled surface-emitting laser device and the upper structure of the wavelength-controlled surface-emitting laser device, respectively,
Figure 2 is a graph showing the wavelength control characteristics according to the refractive index change of the wavelength controlled surface emission laser device of the present invention,
3A to 3K sequentially illustrate the manufacturing process of the wavelength-controlled surface-emitting laser device according to the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.

1A shows a cross-sectional view of a wavelength controlled surface emitting laser device structure according to a preferred embodiment of the present invention. In the drawing, reference numeral 20 denotes the entire lower wavelength control element, 21 is a semiconductor substrate, 22 is a lower mirror layer composed of a semiconductor DBR, 23 is an active layer composed of multilayer quantum wells for gain, 24 is a current injection layer composed of semiconductors, 25 is a limiting layer for forming a current insulating layer consisting of a semiconductor, 26 is an upper contact layer consisting of a semiconductor, 27 is an insulating layer for limiting current, 28 is a dielectric insulating layer 1 for insulating between electrodes, 29 is a lower wavelength control element The upper electrode pad for adjusting, 30 is the upper electrode for the current injection of the lower wavelength control element, 31 is the lower electrode for the current injection of the lower wavelength control element, 32 is the upper electrode connected to the upper electrode for the current injection of the lower wavelength control element The electrode pad 33 represents an antireflection layer 1 of the lower wavelength control element, and 34 represents contact bumps of the upper and lower wavelength control elements. And 40 denotes the entire upper wavelength regulating element, 41 is a substrate of the upper wavelength regulating element, 42 is a top mirror composed of DBR of the upper wavelength regulating element, 43 is a dielectric insulating two layer of the upper wavelength regulating element, 44 is an adjustment lower electrode of the upper wavelength control element, 45 is an antireflection two layer of the upper wavelength control element, 46 is an adjustment upper electrode of the upper wavelength control element, 47 is an antireflection three layer of the upper wavelength control element, and 51 is light The emission direction of, 52 indicates that the light resonates inside.

1B is a top cross-sectional view of a wavelength controlled surface emitting laser device structure according to a preferred embodiment of the present invention. The upper wavelength control element 40 and the lower wavelength control element 20 are bonded to each other, and the upper electrode pad 29 for adjusting the lower wavelength control element and the upper electrode 46 for adjusting the upper wavelength control element as electrodes for wavelength adjustment. Looks like this.

The upper electrode pad 32 for the current injection of the lower wavelength control element is shown as an electrode for device oscillation between the lower electrode 31 (see FIG. 1) and the lower electrode for current injection of the lower wavelength control element.

The present invention applies a current to the upper electrode pad 32 for the current injection of the lower wavelength control element, the current injection upper electrode 30, the upper contact layer 26, the limiting layer 25, the current injection layer 24 The current flows through the active layer 23, the lower mirror layer 22, the semiconductor substrate 21, and the lower electrode 31, and the current application region of the active layer 23 has a gain to generate light. The generated light is provided on the lower mirror layer 22, the active layer 23, the current injection layer 24, the limiting layer 25, the upper contact layer 25, the antireflection layer 1, the upper portion of the lower wavelength control element. The laser beam is emitted by obtaining a gain by reciprocating the anti-reflection second layer 45 of the wavelength adjusting element and the upper mirror layer 42 of the upper wavelength adjusting element. At this time, the upper electrode pad 29 and the contact bump 34 of the lower wavelength control element 20, the lower electrode 44 of the upper wavelength control element, the upper mirror layer 42 of the upper wavelength control element, the upper wavelength control element When current is applied through the substrate 41 of the upper wavelength control element and the upper electrode 46 of the upper wavelength control element, the reflectance and the reflection phase change according to the change of the refractive index of the upper mirror layer 42 in the region where the beam reciprocates and oscillates accordingly. The wavelength will change.

Therefore, current injection for gain of the device and current injection for controlling the wavelength of the device operate independently.

FIG. 2 is a graph showing a change in reflectance of a wavelength controlled surface emitting laser device according to a change in refractive index by applying current of the upper mirror layer 42 in the structures of FIGS. 1A and 1B.

In FIG. 2, the wavelength at which the reflectance rapidly decreases corresponds to the oscillation wavelength. The oscillation wavelength changes by about 14 nm at a refractive index change of 3% due to a change in refractive index of the upper mirror layer 42. Therefore, it is possible to control the wavelength more than ± 14 nm through the ± 3% refractive index change.

The preferred embodiment of the present invention will be described in more detail with reference to FIGS. 1A and 1B as follows.

A semiconductor DBR layer is formed on the InP semiconductor substrate 21 of the N-type lower wavelength control element as the lower mirror layer 22 of the lower wavelength control element. In _y (Al _x Ga _1-x ) _1-y As / In _z (Al _w Ga _1-w ) _1-z As (0 < x, y, z, w < 1) or InP / In _y (Al _x Ga _1-x ) _1-y As (0 < x, y < 1), etc. In _y (Al _x Ga _1-x ) _1-y As / In _z (Al _w Ga _1-w ) _1-z As s (0) < x, y < 1) An active layer 23 composed of a quantum well layer is formed. On the active layer 23 a current injection layer 24 consisting of doped InP for protection and current application in selective etching, In _y (Al _x Ga _1-x ) _1-y As for current limitation and current application and selective etching The limiting layer 25 consisting of (0 < x, y, z, w < 1), and the upper contact layer 26 for upper electrode contact are made of InP or the like. The limiting layer 25 is partially etched to limit the current, and the etched portion is made of an oxide film such as AlO _x formed by the oxidation method or filled with an insulating layer 27 such as AlO _x or AlN _x .

The upper electrode 30 is formed by depositing a metal electrode on the upper contact layer 26, and the dielectric insulating layer 1 28 for insulating between the electrode pads is except where the light is emitted from the upper electrode 30. And formed on the upper contact layer 26 and the current injection layer 24 for insulation. An upper electrode pad 32 connected to the upper electrode 30 is formed on the dielectric insulating layer 1 and used as an electrode for applying a current to the lower wavelength control element. The lower electrode 31 is formed on the rear surface of the semiconductor substrate 21 to apply a current between the upper electrode pad 32 and the lower electrode 31 to form a structure in which light is emitted. An antireflection first layer 33 is formed on the upper contact layer 27 by using SiOx, TiOx, SiNx or the like to prevent reflection of light in the region where light is emitted. Then, the upper electrode pad 29 for adjusting the wavelength is formed on the dielectric insulator 1 layer 28, and a contact pad 34 such as AuSn or the like is formed thereon for the eutectic bonding with the upper control element.

The upper wavelength control element 40 is an upper mirror layer 42 of the upper wavelength control element 42 on the semiconductor substrate 41. The semiconductor DBR layer is formed of In _y (Al _x Ga _{1 -x} ) _{1- y} As / In _z (Al). _w Ga _{1 -w} ) _{1- z} As (0 < x, y, z, w < 1), InP / In _y (Al _x Ga _{1 -x} ) _{1- y} As (0 < x, y < 1), Al _x Ga _{1 - x} As / Al _y Ga _{1- y} As (0 < x, y < 1) or the like. Partial dielectric insulating layer 43 of the upper wavelength control element is formed on the upper mirror layer 42 to insulate the electrodes, and wavelength control is performed on the dielectric insulating layer 43 and a part of the upper mirror layer 42. The lower electrode 44 is formed for the upper portion, and the upper electrode 46 for wavelength adjustment is formed behind the substrate 41 of the upper wavelength adjusting element 40. In this case, a portion of the upper mirror layer 42 may be formed of a p-type semiconductor in order to efficiently apply current, so that current may be easily applied.

After the lower wavelength control element 20 and the upper wavelength control element 40 are bonded to each other, an anti-reflection second layer 45 is formed on a part of the upper mirror layer 42 to prevent reflection of a surface on which light is reflected. Also, the antireflection three-layer 47 is formed on the substrate 41 of the upper wavelength control element in order to prevent reflection of the region where light is emitted.

The upper wavelength control element 40 and the lower wavelength control element 20 are bonded using the contact bumps 34 to the upper electrode pad 29 for adjusting the lower wavelength control element and the lower electrode 44 of the upper wavelength control element. It is to be electrically connected to each other with bonding.

Therefore, when a current is applied between the upper electrode pad 32 for the current injection of the lower wavelength control element and the lower electrode 31 of the lower wavelength control element, the upper electrode pad 32-the upper electrode 30-the contact layer 27 The current flows through the active layer 23 through the current limiting layer 25, the current injection layer 24, the active layer 23, the lower mirror layer 22, and the substrate 21, and light is emitted. At this time, when a voltage is applied between the upper electrode pad 29 of the lower wavelength adjusting element and the upper electrode 46 of the upper wavelength adjusting element, the electrode pad 29 -contact bump 34-upper wavelength of the lower wavelength adjusting element. A voltage is applied and a current flows between the lower electrode 44 of the adjusting element, the upper mirror layer 42 of the upper wavelength adjusting element, the substrate 41 of the upper wavelength adjusting element, and the upper electrode 46 of the upper wavelength adjusting element. Accordingly, the reflectance and the reflection phase are changed by the change in the refractive index of the upper mirror layer 42 of the upper wavelength control element. Therefore, the emitted wavelength is controlled to have the characteristics of the wavelength controlled surface emitting laser.

The semiconductor DBR layers constituting the lower mirror layer 22 of the lower wavelength control element for a structure grown semiconductor of two or more layers alternately, the lower mirror layer 22, a lattice-matched structure to InP In _y (Al _x Ga _{1- x} ) _{1- y} As / In _z (Al _w Ga _{1 -w} ) _{1- z} As s (0 < x, y, z, w < 1) or InP / In _y (Al _x Ga _{1- x} ) A semiconductor thin film layer having different refractive indices, such as _{1- y} As (0 < x, y < 1), is alternately grown, and the thickness of one cycle is laser oscillated at an optical length (thickness x refractive index at the oscillation wavelength). It is configured to be half of the wavelength.

In the upper mirror layer 42, In _y (Al _x Ga _{1 -x} ) _{1- y} As / In _z (Al _w Ga _{1 -w} ) _{1- z} As s (0 < x, y, z, w < 1) or InP / In _y (Al _x Ga _{1 -x} ) _{1- y} As (0 < x, y < 1) or Al _x Ga _{1 - x} As / Al _y Ga _{1 -y} As (0 < x, y The semiconductor thin film layers having different refractive indices, such as < 1), are alternately grown and fabricated so that the thickness of one cycle is half of the laser oscillation wavelength at an optical length (thickness x refractive index at the oscillation wavelength).

The active layer 23 is configured such that the total thickness thereof is an integer multiple of half the oscillation wavelength at the optical length.

3A to 3K are cross-sectional views sequentially illustrating a method of manufacturing a wavelength-controlled surface emitting laser device having the structures shown in FIGS. 1A and 1B. FIGS. 3A to 3G are cross-sectional views illustrating a method of manufacturing a lower wavelength control device. 3H to 3J are cross-sectional views illustrating a method of manufacturing the upper wavelength control element.

First, referring to FIG. 3A, an n-type semiconductor substrate 21, a lower mirror layer 22 composed of a semiconductor DBR, an active layer 23 composed of a quantum well, a current injection layer 24, The limiting layer 25 for forming the current limiting layer, the upper contact layer 26 for contacting the upper electrode, and the like are sequentially grown.

As shown in FIG. 3B, a laser post is formed by a dry etching method for separation between lower wavelength control elements. That is, after depositing a dielectric 71 such as SiNx and forming a pattern using a photoresist, the dielectric 71 is etched using the photoresist as a mask to form a mask pattern, and then Cl ₂ : Ar mixture or A laser post is manufactured by partially etching the upper contact layer 26 and the limiting layer 25 in a desired region by a dry etching method using a CH ₄ : H ₂ mixture.

Subsequently, as shown in FIG. 3C, a portion of the limiting layer 25 around the post is etched using the selective etching method or oxidized using the selective oxidation method to form the insulating layer 27. In this case, as an selective etching method, when InP is formed as the upper contact layer 26 and the current injection layer 24, the upper contact layer 26 and the current injection layer using a mixture of H ₃ PO ₄ series. An air gap is formed by etching the limiting layer 25 without etching (24). In addition, a mixture such as HCl, H ₃ SO _4, etc. may be used depending on the constituent material. In the process of filling a dielectric material into the fabricated air gap structure, an insulating layer 27 such as AlO _x or AlN _x is deposited by atomic layer deposition in a temperature range of 150 to 400 ° C. in which no loss occurs in the device. Put it in. In the case of using the selective oxidation method, the upper contact layer 26 and the current injection layer 24 are made of a material having a low Al composition, and the limiting layer 25 is made of a material having a high Al composition and has a temperature range of 350 to 450 ° C. Heat treatment in an atmosphere containing water at to form an insulating layer 27 such as AlOx.

As shown in FIG. 3D, the upper electrode 30 is manufactured by depositing an electrode metal on the upper contact layer 26 using a patterning method using a photoresist.

As shown in FIG. 3E, after the dielectric insulating layer is deposited on the lower wavelength control element, a photoresistor or the like is formed in a pattern to etch the dielectric insulating layer on the laser post and the upper electrode 30 to etch the dielectric insulating layer 1 ( 28).

Next, as shown in FIG. 3F, the upper electrode pad 29 and the upper electrode pad 32 for current injection are deposited on the lower wavelength control element by using a patterning method using a photoresist. A lower electrode 31 for current injection is formed on the back side of the semiconductor substrate.

As shown in FIG. 3G, the anti-reflective layer 33 is formed on the laser post to prevent reflection with air using a patterning method using a photoresistor on the lower wavelength control element, and an upper patterning method using a photoresist. The contact bumps 34 for bonding with the lower wavelength control element 40 are deposited on the electrode pads 29. At this time, the contact bumps for the eutectic bonding deposit a contact metal such as AuSu containing Sn.

Referring to FIG. 3H, an n-type semiconductor substrate 41 and an upper mirror layer 42 composed of a semiconductor DBR are sequentially grown to fabricate the upper wavelength control element.

As shown in FIG. 3I, after depositing the dielectric insulator layer 2 on the upper mirror layer 42, a portion of the region is patterned by using a photoresist pattern method and removed by dry etching or wet etching. . The lower electrode 44 is then patterned using a photoresist and deposited in a desired region. At this time, a portion of the lower electrode is positioned on the upper mirror layer 42 to enable the application of current.

As shown in FIG. 3J, an anti-reflective two-layer 45 is formed on a portion of the upper mirror layer 42, and the upper electrode 46 and the anti-reflective three-layer 47 are formed on the rear surface of the semiconductor substrate 41. Deposition to produce the upper wavelength control element.

As shown in FIG. 3K, the upper wavelength control element 40 fabricated in FIG. 3J is inverted and bonded using the utex method on the lower wavelength control element 20 fabricated in FIG. 3G. At this time, the upper electrode pad 29 of the lower wavelength control element and the lower electrode 44 of the upper wavelength control element are in electrical contact with each other, and the light emitting region of the lower wavelength control element and the upper wavelength control element The areas where the light resonates coincide with each other.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

20: lower wavelength control element
21: Substrate of lower wavelength control element
22: bottom mirror layer consisting of semiconductor DBR of lower wavelength control element
23: active region consisting of a semiconductor of the lower wavelength control element
24: current injection layer composed of semiconductor
25: confinement layer for forming a current insulating layer consisting of a semiconductor
26: top contact layer composed of semiconductors
27: insulation layer for current limiting
28: dielectric insulation 1 layer for insulation between electrodes
29: upper electrode pad for adjusting the lower wavelength control element
30: upper electrode for current injection of the lower wavelength control element
31: lower electrode for the current injection of the lower wavelength control element
32: upper electrode pad for current injection of the lower wavelength control element
33: antireflection layer 1 of lower wavelength control element
34: contact bumps of upper and lower wavelength control elements
40: upper wavelength control element
41: substrate of the upper wavelength control element
42: top mirror layer composed of DBR of upper wavelength control element
43 dielectric two layers of upper wavelength control element
44: lower electrode for adjusting the upper wavelength control element
45: antireflection two layers of the upper wavelength control element
46: upper electrode for adjusting the upper wavelength control element
47: antireflection three layers of the upper wavelength control element
51: display indicating the direction of light emission
52: Indicates that light resonates inside

Claims (10)

delete A lower mirror layer composed of a semiconductor DBR (distributed bragg reflector) sequentially stacked on a semiconductor substrate, an active layer formed of a quantum well layer on the lower mirror layer, a current injection layer composed of a semiconductor on the active layer, and a current injection layer A limiting layer for forming an insulating layer composed of a semiconductor, and an upper contact layer composed of a semiconductor on the limiting layer, and etching a portion of the upper contact layer and the insulating layer, and selectively etching the insulating layer to partially remove the insulating layer. An insulating layer formed by removing and filling or selectively oxidizing therebetween, the upper electrode for current injection connected to the upper contact layer, the lower electrode for current injection formed on the back side of the substrate, and the electrode A dielectric insulating layer formed on a portion of the upper contact layer and the current injection layer for insulation, and a control phase formed on the dielectric insulating layer Electrode pad, and the contact bumps for bonding on the upper electrode pad and the upper contact layer and the wavelength control element formed by a lower anti-reflection layer to reduce the reflection between air;
An upper mirror layer composed of a semiconductor DBR (distributed bragg reflector) sequentially stacked on a semiconductor substrate, a dielectric insulating layer formed on a portion of the upper mirror layer for insulation between electrodes on the upper mirror layer, and the dielectric insulating layer; An adjustable lower electrode formed on the upper mirror layer, an antireflection layer formed to reduce reflection between the upper mirror layer and air on the upper mirror layer, an adjustable upper electrode formed on the rear surface of the semiconductor substrate, and a rear surface of the substrate An upper wavelength control element composed of an antireflection layer formed on the substrate to reduce reflection between air; Lt; / RTI &gt;
Inverting the upper wavelength control element and bonding the lower wavelength control element to apply a current to the upper wavelength control element to adjust the reflectance and the reflection phase of the upper mirror layer to control the oscillation wavelength of light emitted from the lower wavelength control element. A wavelength controlled surface emitting laser device characterized by the above-mentioned. On _y (Al _x Ga _1-x ) _1-y As / In _z (Al _w Ga _1-w ) _1-z As (0 < x, y, z, w < 1) on n-type InP semiconductor substrate or InP / In _y (Al _x Ga _1-x ) _1-y As (0 < x, y < 1) doped semiconductor DBR layer, the lower mirror layer of lattice matched structure to InP on the lower mirror layer An active layer consisting of a quantum well layer, a current injection layer consisting of a semiconductor doped on the active layer, and In _y (Al _x Ga _1-x ) _1-y As (0 < x, y < 1 doped on the current injection layer) ) A limited layer formed of a semiconductor, an upper contact layer composed of a semiconductor doped on the limiting layer, a portion of the upper contact layer and the insulating layer are etched, and then the insulating layer is selectively etched to remove a portion and then AlO therebetween. an insulating layer formed of AlO _x by filling or selectively oxidizing with a material such as _x or AlN _x , an upper electrode for current injection formed by depositing a metal electrode connected on the upper contact layer, and a metal on the back of the substrate A lower electrode for current injection formed by depositing an electrode, a dielectric insulating layer formed on a portion of the upper contact layer and the current injection layer to insulate between the electrodes, a control upper electrode pad formed on the dielectric insulating layer, and on the upper electrode pad A lower wavelength control element composed of a contact bump for bonding and a dielectric antireflection layer to reduce reflection between the upper contact layer and air;
In _y (Al _x Ga _1-x ) _1-y As / In _z (Al _w Ga _1-w ) _1-z As s (0 < x, y, z, stacked on N-type GaAs or InP substrate) w < 1) or InP / In _y (Al _x Ga _1-x ) _1-y As (0 < x, y < 1) or Al _x Ga _1-x As / Al _y Ga _1-y As (0 < x y < 1) an upper mirror layer composed of a semiconductor DBR, a dielectric insulating layer formed on a portion of the upper mirror layer for insulation between the electrodes on the upper mirror layer, and depositing a metal electrode on the dielectric insulating layer and the upper mirror layer A lower electrode for adjustment, an antireflection layer formed to reduce reflection between the upper mirror layer and air on the upper mirror layer, an upper electrode for adjustment formed by depositing the metal electrode on the back of the substrate, and on the back of the substrate An upper wavelength control element composed of an antireflection layer to reduce reflection between air; The upper wavelength control element is inverted and bonded to the lower wavelength control element to apply current to the upper wavelength control element to adjust the reflectance and the reflection phase of the upper mirror layer to control the oscillation wavelength of the light emitted from the lower wavelength control element. A wavelength-controlled surface-emitting laser device, characterized in that for adjusting. The method according to claim 3,
And a portion of the upper mirror layer of the upper wavelength control element made of a p-type semiconductor to easily apply current. The method according to claim 3,
A wavelength-controlled surface-emitting laser device characterized in that the contact bumps are composed of AuSn. In the method for manufacturing a wavelength controlled surface emission laser device,
sequentially forming an n-type semiconductor substrate, a lower mirror layer composed of a semiconductor DBR, an active layer composed of a quantum well, a current injection layer for current injection, a restriction layer for current limitation, and an upper contact layer for upper electrode contact;
Fabricating a laser post by etching a portion of the upper contact layer and the restriction layer in a desired region by a dry etching method using the dielectric as a mask;
Fabricating the insulating layer by selective etching and insulator deposition or selective oxide film formation for the current limiting layer;
Manufacturing an upper electrode by depositing an electrode metal on the upper contact layer using a patterning method using a photoresist;
Depositing a dielectric insulating layer thereon, and forming a photoresist or the like into a pattern to etch the dielectric insulating layer on the laser post and the upper electrode to form a dielectric insulating layer 1;
Depositing an upper electrode pad for adjustment and an upper electrode pad for current injection using a patterning method using a photoresist;
Forming a lower electrode on a back surface of the semiconductor substrate for current injection;
Preventing reflection with air forming an antireflection layer on the laser post;
Manufacturing a lower wavelength control element by depositing contact bumps for bonding with the lower wavelength control element on the upper electrode pad for adjustment by a patterning method using a photoresist;
sequentially forming an upper mirror layer composed of an n-type semiconductor substrate and a semiconductor DBR;
Depositing a second dielectric insulating layer on the upper mirror layer and etching a portion of the portion using a photoresist pattern method;
Patterning a lower electrode on the dielectric insulating layer 2 having the upper mirror layer and the partial region etched thereon by using a photoresist and depositing the same on a desired region;
Forming an anti-reflection layer in a portion on the upper mirror layer;
Manufacturing an upper wavelength control element by depositing an upper electrode and an antireflection layer on a back surface of the semiconductor substrate;
Inverting the upper wavelength control element on the lower wavelength control element and bonding the upper wavelength control element by using a eutectic method; Method of manufacturing a wavelength-controlled surface-emitting laser device comprising a. The method of claim 6,
In order to form an air gap by removing the restriction layer by a selective etching method, selectively etching using a mixture of H ₃ PO ₄ series or a mixture of HCl, in a temperature range of 150 ~ 400 ℃ A method of manufacturing a wavelength-controlled surface-emitting laser device characterized by depositing and filling an insulating layer containing AlO _x or AlN _x by atomic layer deposition. The method of claim 6,
The method of manufacturing a wavelength-controlled surface-emitting laser device, characterized in that to form an insulating layer by heat treatment in the atmosphere containing water in the temperature range of 350 ~ 450 ℃ by selective oxidation method. The method of claim 6,
And manufacturing the upper electrode pad of the lower wavelength adjusting element and the lower electrode of the upper wavelength adjusting element to be in electrical contact with each other. The method of claim 6,
And a region in which the light of the lower wavelength control element is emitted and a region in which the light of the upper wavelength control element is resonant coincide with each other.

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