KR101227673B1 - Apparatus for chemical vapor deposition - Google Patents

Abstract

Disclosed is a chemical vapor deposition apparatus which prevents a shock that may be generated due to opening and closing of a lid to a liner, and prevents foreign matter from penetrating between the chamber and the lighter.
The chemical vapor deposition apparatus according to the present invention includes a chamber in which one end is opened, a lid opened and closed from one end of the chamber, and a shower head installed on one surface of the lead facing the inside of the chamber to inject gas into the chamber. And a susceptor disposed opposite the shower head in the chamber to support the substrate, spaced apart from the inner wall of the chamber, and disposed between the inner wall of the chamber and the susceptor to exhaust gas exhaust path. It may include a liner to form.

Description

Chemical vapor deposition apparatus {Apparatus for chemical vapor deposition}

The present invention relates to a chemical vapor deposition apparatus, and more particularly to a chemical vapor deposition apparatus used to form a crystal layer on a substrate using a III-V material.

The nitride material is best known as a material for manufacturing a light emitting device. The stacked structure of a light emitting device using a nitride material generally has a buffer layer made of GaN crystals, an n-type doped layer made of n-type GaN crystals, an active layer made of InGaN, and p-type GaN formed on a substrate such as sapphire. It has a structure in which type doping layers are sequentially stacked. Each of these crystal layers is sequentially deposited in a chemical vapor deposition apparatus.

A general chemical vapor deposition apparatus is installed in a chamber, a lid for opening and closing the chamber, a showerhead installed at one surface of the lid facing the inside of the chamber, and spraying process gas, a susceptor supporting the substrate opposite to the showerhead, and the susceptor. And a heater for heating the substrate, an exhaust pipe communicating with the interior of the chamber, and an exhaust pump for exhausting the interior of the chamber through the exhaust pipe. The process gas may be a gas in which a raw material gas vaporized and a carrier gas carrying the raw material gas are mixed.

The chemical vapor deposition apparatus rotates the lid to open the chamber to bring the substrate into the chamber, and then rotates the lid again to seal the chamber. Process gas is injected into the chamber through the shower head. The source gas included in the process gas reacts with the heated substrate to form a crystal layer. And the remaining waste gas and foreign matter remaining on the substrate is discharged to the outside of the chamber through the exhaust pipe in accordance with the exhaust of the exhaust pump.

At this time, the raw material, or foreign matter remaining in the chamber may be deposited on the inner wall of the chamber. The raw material or foreign matter deposited on the inner wall of the chamber is a problem that is difficult to control the temperature inside the chamber by keeping the inner wall of the chamber.

In addition, the raw material or foreign matter deposited on the inner wall of the chamber may be separated from the inner wall of the chamber during the deposition process and mixed with the process gas to the substrate. In this way, the raw material or foreign matter that is separated from the inner wall of the chamber and mixed in the process gas may act as a particle that degrades the quality of the crystal layer and may act as a cause of increasing the defective rate of the product.

Therefore, the chemical vapor deposition apparatus includes a separate liner detachable to the inner wall of the chamber. The liner is installed to be in close contact with the inner wall of the chamber to prevent the raw material or foreign matter from being deposited on the inner wall of the chamber. The liner is made of quartz having excellent heat and chemical resistance so as not to affect the process.

However, when opening and closing the lid, an impact due to opening and closing of the lid may be generated at the upper end of the chamber, and the impact may be transmitted to the liner in close contact with the inner wall of the chamber. As the impact accumulates, the liner made of quartz has a problem of deterioration in durability.

In addition, due to the nature of the deposition process carried out at a high temperature, it is difficult to employ a rubber or synthetic resin sealing material inside the chamber. Or there is a problem of being deposited on the outer wall of the liner.

SUMMARY OF THE INVENTION An object of the present invention is to provide a chemical vapor deposition apparatus which prevents a shock which may occur due to opening and closing of a lid to a liner installed inside the chamber, and prevents foreign matter from penetrating between the chamber and the liners. will be.

The chemical vapor deposition apparatus according to the present invention includes a chamber in which one end is opened, a lid opened and closed from one end of the chamber, and a shower head installed on one surface of the lead facing the inside of the chamber to inject gas into the chamber. A susceptor disposed opposite the shower head in the chamber to support the substrate; a liner disposed between the inner wall of the chamber and the susceptor to form an exhaust path of waste gas; And a shielding film extending from one end surface to an inner side surface of the liner.

The liner may include a first close contact with the outer wall of the susceptor, a second close contact with the inner wall of the chamber, and a bend from the first close contact with the second close contact. .

An end of the second contact portion facing one end of the chamber may be disposed to be recessed inwardly of the chamber than an end surface of the chamber.

The shielding film may be in close contact with an inner surface of the second contact portion and spaced apart from a front end surface of the second contact portion.

The susceptor includes a rotating plate formed with a substrate receiving groove for supporting the substrate and a rotating plate, and a supporting body for supporting the rotating plate so that the rotating plate is rotatable, wherein the first contact portion is in close contact with an outer wall of the supporting body. Can be.

The chemical vapor deposition apparatus may further include an exhaust pipe passing through the sidewall of the chamber and the first adhesion part to communicate with the inside of the chamber.

One end surface of the chamber is formed with a shielding groove formed to the same depth as the thickness of the shielding film, the shielding film may be accommodated in the shielding groove.

The liner may be made of quartz.

Chemical vapor deposition apparatus according to the present invention can prevent the shock that can be delivered to the chamber to be transmitted to the liner in accordance with the opening and closing of the lid can improve the durability of the liner.

In addition, the chemical vapor deposition apparatus according to the present invention can reduce the volume formed in the chamber to improve the exhaust efficiency.

In addition, the chemical vapor deposition apparatus according to the present invention prevents foreign matters generated during the process from being deposited by penetrating between the chamber and the liner, thereby providing convenience for maintaining and managing the device, and having an effect of obtaining a high quality crystal layer. have.

1 is a cross-sectional view showing a chemical vapor deposition apparatus according to the present embodiment.
FIG. 2 is an enlarged view of part “I” shown in FIG. 1.
3 is a cross-sectional view showing a lead opening and closing operation of the chemical vapor deposition apparatus according to the present embodiment.
4 is a cross-sectional view showing a deposition process of a chemical vapor deposition apparatus according to the present embodiment.

Hereinafter, the chemical vapor deposition apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a chemical vapor deposition apparatus according to the present embodiment, Figure 2 is an enlarged view showing a portion "I" shown in FIG.

1 and 2, the chemical vapor deposition apparatus 100 includes a chamber 110. The chamber 110 is provided in a container shape in which an upper end thereof is opened to facilitate loading and unloading of the substrate S. The lid 120 is installed at an upper end of the chamber 110, and the chamber 110 is hermetically sealed by the lid 120. The lid 120 is rotated and opened based on the rotation shaft 121 disposed in the planar direction of the chamber 110.

The shower head 130 is installed on one surface of the lid 120 facing the inside of the chamber 110. Therefore, the shower head 130 may be rotated together with the lid 120. The shower head 130 allows the gas supplied from the gas supply device (not shown) to be uniformly sprayed into the chamber 110.

The susceptor 140 is disposed inside the chamber 110. The susceptor 140 may include a rotating plate 141 rotated by the rotor 150 to be described later, and a support body 142 supporting the rotating plate 141 so that the rotating plate 141 is rotatable. The upper surface of the rotating plate 141 is formed with a substrate receiving groove 141a in which the substrate S is accommodated. The substrate accommodating groove 141a allows the substrate S to be stably supported by the susceptor 140 without being separated from the susceptor 140 even when the rotating plate 141 is rotated. The substrate receiving groove 141a may be formed in plural so as to support the plurality of substrates S together.

On the other hand, the rotating plate 141 is supported by the rotor 150. The rotor 150 rotates the rotating plate 141 so that the crystal layer may be deposited on the plurality of substrates S with a uniform thickness. The susceptor 140 may be provided with a heater 143 for indirectly heating the substrate S by the heated rotating plate 141 by heating the rotating plate 141.

Here, the gas injected into the chamber 110 through the shower head 130 includes a process gas G1 and a purge gas G2. The process gas G1 may include a raw material gas vaporized with a raw material and a carrier gas carrying the raw material gas. The process gas G1 may be any one of Group III gas (Trimethyl-gallium (TMGa), Trimetal-Indium (TMI), Trimethyl-Aluminium (TMA)) gas, or Group V gas (ammonia (NH 3) gas) may be used. As the purge gas G2, any one of nitrogen (N2) gas and hydrogen (H2) gas may be used.

The process gas G1 is used to deposit a crystal layer on the substrate S, and the purge gas G2 is a waste gas discharged to the outside of the chamber 110 to flow back to the showerhead 130 and the susceptor 140. Is used to prevent penetration into the space between. Therefore, the process gas G1 is injected toward the susceptor 140, and the purge gas G2 is injected between the inner wall of the chamber 110 and the outer wall of the susceptor 140.

The liner 160 is installed between the inner wall of the chamber 110 and the outer wall of the susceptor 140. The liner 160 has a cross-sectional shape of "J" shape. That is, the liner 160 may include a first contact portion 161 in close contact with the outer wall of the support body 142, a curved portion 162 extending from the first contact portion 161 and bent from the first contact portion 161, and a chamber from the curved portion 162. And a second close contact portion 163 in close contact with the inner wall of the 110.

The second contact portion 163 has a distal end face toward the upper end of the chamber 110 lower than the upper end surface of the chamber 110. Even if the lid 110 is opened or closed, the second contact portion 163 may avoid a physical impact with the lid 110.

The exhaust pipe 170 communicating with the inside of the chamber 110 is connected to the sidewall of the chamber 110 and the second contact portion 163. The exhaust pipe 170 is connected to an exhaust pump not shown. The liner 160 prevents vortices from occurring in the waste gas G3 directed to the exhaust pipe 170 and guides the waste gas G3 to the exhaust pipe 170. Therefore, the liner 160 is made of quartz having excellent chemical resistance and heat resistance in order not to affect the process.

On the other hand, the shielding film 180 is installed on the upper end of the chamber 110. In addition, a shielding groove 181 is formed at an upper end of the chamber 110 to prevent the interference of opening and closing of the lid 120 by the shielding layer 180. The shielding groove 181 is formed to have the same depth as the thickness of the shielding film 180 so that the shielding film 180 does not protrude from the top surface of the chamber 110 when the shielding film 180 is accommodated. The shielding film 180 has a cross-sectional shape that is bent from the top surface of the chamber 110 to the inner surface of the second contact portion 163 to be in close contact.

When the shielding film 180 is exhausted from the chamber 110, an optimal efficiency that may be increased as the inner wall of the chamber 110 is spaced apart from the second adhesion part of the liner 160 may be reduced to improve the exhaust efficiency. In addition, raw materials and foreign substances that may be included in the process gas G1, the purge gas G2, and the waste gas G3 are prevented from penetrating into the space between the inner wall of the chamber 110 and the outer wall of the liner 160. . Accordingly, the shielding layer 180 prevents the deposition of raw materials and foreign materials on the inner wall of the chamber 110 or the outer wall of the liner 160 to provide convenience for maintenance and repair of the chamber 110 and the liner 160. .

As such, the liner 160 has a distal end surface of the second close contact portion 163 lower than an upper end surface of the chamber 110, and an upper surface of the chamber 110 and an inner side surface of the second close contact portion 163 are shielding films. Since it is protected by the 180, when opening and closing the lid 120, it can be protected from physical impact with the lid 120.

Hereinafter, the operation of the chemical vapor deposition apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

 3 is a cross-sectional view showing the lead opening and closing operation of the chemical vapor deposition apparatus according to the present embodiment, Figure 4 is a cross-sectional view showing the deposition process of the chemical vapor deposition apparatus according to the present embodiment.

3 and 4, the lid 120 is in close contact with the upper end of the chamber 110 so that the lid 120 is rotated to bring in the substrate S while the chamber 110 is closed, and the chamber ( 110 is opened.

Subsequently, the substrate S is loaded into the chamber 110 and supported by the susceptor 140. That is, the substrate S is accommodated in the substrate accommodating groove 141a and supported by the rotating plate 141. In this case, the plurality of substrates S may be supported together on the rotating plate 141 so as to deposit the same crystal layer on the plurality of substrates S together. When the substrate S is placed in the susceptor 140 as described above, the lid 120 is rotated to seal the chamber 110.

At this time, the liner 160 has a second contact portion 163 lower than the upper end of the chamber 110, and the inner surface of the liner 160 is protected by the shielding layer 180, so that one surface of the lid 120 and the chamber 110 are provided. The top surface of the c) may be protected from physical shocks that may occur when the top surface is in contact.

Subsequently, the rotating plate 141 is heated by the heater 143. In this state, the process gas G1 and the purge gas G2 supplied from the gas supply device (not shown) are injected into the chamber 110 through the shower head 130. In this case, the process gas G1 is injected toward the susceptor 140, and the purge gas G2 is injected between the first and second contact portions 161 and 163 of the liner 160. . The process gas G1 injected into the susceptor 140 chemically reacts with the heated substrate S to form a crystal layer.

In addition, the exhaust pump (not shown) exhausts the inside of the chamber 110 through the exhaust pipe 170. The purge gas G2 injected into the liner 160 prevents the waste gas G3 from flowing back, thereby preventing the waste gas G3 from penetrating between the shower head 130 and the susceptor 140. In addition, the liner 160 guides the waste gas G3 to the exhaust pipe 170 and prevents the vortex from occurring before the exhaust pipe 170.

At this time, the inner wall of the chamber 110 and the outer wall of the liner 160 are shielded from the inner space of the chamber 110 by the shielding film 180, so that the inner wall of the chamber 110 and the outer wall of the liner 160 are By reducing the optimum inside the chamber 110 that can increase as spaced apart so that the exhaust efficiency can be improved.

In addition, raw materials and foreign substances that may be included in the process gas G1, the purge gas G2, and the waste gas G3 may be disposed between the inner wall of the chamber 110 and the outer wall of the liner 160 by the shielding film 180. Penetration into space is blocked. Therefore, raw materials and foreign substances are prevented from being deposited on the inner wall of the chamber 110 or the outer wall of the liner 160 to provide convenience for maintenance and repair of the chamber 110 and the liner 160.

100: chemical vapor deposition apparatus 110: chamber
120: lead 130: shower head
140: susceptor 150: rotating machine
160: liner 170: exhaust pipe
180: shielding film

Claims (8)

The chamber is open at one end,
A lid opening and closing based on a rotation axis disposed in a plane direction of the chamber to allow the substrate to enter and exit the chamber through one end of the chamber;
A shower head installed on one surface of the lid facing the inside of the chamber to inject gas into the chamber;
A susceptor disposed in the chamber so as to face the shower head and supporting the substrate;
A liner disposed between the inner wall of the chamber and the susceptor to form an exhaust path of the waste gas;
And a shielding film extending from an end surface of the chamber to an inner side surface of the liner. The method of claim 1, wherein the liner
A first close contact with the outer wall of the susceptor,
A second close contact with the inner wall of the chamber,
Chemical vapor deposition apparatus comprising a curved portion bent from the first contact portion to the second contact portion. 3. The chemical vapor deposition apparatus according to claim 2, wherein the front end surface of the second contact portion facing one end of the chamber is disposed to be recessed inwardly of the chamber than the one end surface of the chamber. The method of claim 3, wherein the shielding film
The chemical vapor deposition apparatus is in close contact with the inner surface of the second contact portion, and spaced apart from the front end surface of the second contact portion. The method of claim 2, wherein the susceptor is
A rotating plate to which the substrate accommodation groove for supporting the substrate is formed and rotated;
The rotating plate includes a support body rotatably supporting the rotating plate,
Chemical vapor deposition apparatus, characterized in that the first contact portion is in close contact with the outer wall of the support body. 3. The chemical vapor deposition apparatus according to claim 2, further comprising an exhaust pipe passing through the sidewall of the chamber and the first adhesion part to communicate with the inside of the chamber. The chemical vapor deposition apparatus according to claim 1, wherein a shielding groove is formed on one end surface of the chamber to a depth equal to the thickness of the shielding film, and the shielding film is accommodated in the shielding groove. The chemical vapor deposition apparatus according to claim 1, wherein the liner is made of quartz.

Images